Precise and accurate refinements of the 220 structure factor for silicon by the systematic-row CBED method (English)
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In:
Ultramicroscopy
;
69
, 3
; 169-184
;
1997
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ISSN:
- Article (Journal) / Print
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Title:Precise and accurate refinements of the 220 structure factor for silicon by the systematic-row CBED method
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Contributors:
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Published in:Ultramicroscopy ; 69, 3 ; 169-184
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Publisher:
- New search for: Elsevier
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Place of publication:New York, NY [u.a.]
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Publication date:1997
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ISSN:
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ZDBID:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
- New search for: 42.03 / 42.03 / 33.05 / 33.05
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Keywords:
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Source:
Table of contents – Volume 69, Issue 3
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 151
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Assessment of the quantitative characterization of localized strain using electron diffraction contrast imagingJanssens, K.G.F. et al. | 1997
- 169
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Precise and accurate refinements of the 220 structure factor for silicon by the systematic-row CBED methodSwaminathan, S. et al. | 1997
- 185
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Does electron holography energy-filter?Spence, J.C.H. et al. | 1997
- 191
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Mapping elasticity of rehydrated metaphase chromosomes by scanning force microscopyFritzsche, W. et al. | 1997
- 201
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Interference experiments with energy filtered electronsHarscher, A. et al. | 1997
- 211
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Imaging of droplets of aqueous solutions by tapping-mode scanning force microscopyHerminghaus, S. et al. | 1997