A new test method for contactless quantitative current measurement via scanning magneto-resistive probe microscopy (English)
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In:
Microelectronics reliability
;
19980
; 969-974
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ISSN:
- Article (Journal) / Print
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Title:A new test method for contactless quantitative current measurement via scanning magneto-resistive probe microscopy
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Contributors:
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Published in:Microelectronics reliability ; 19980 ; 969-974
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Publisher:
- New search for: Elsevier
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Place of publication:Amsterdam [u.a.]
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
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Table of contents – Volume 19980
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 851
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Full-Chip Reliability AnalysisOverhauser, David et al.
- 861
-
An analysis of the quality and reliability supplement to the SIA RoadmapThomas, Robert W. et al.
- 869
-
The use of the Focused Ion Beam in failure analysisVerkleij, D. et al.
- 877
-
Analysis of Iddq failures by spectral photon emission microscopyRasras, M. et al.
- 883
-
Near-field-optical-probe induced resistance-change-detection (NF-OBIRCH) method for identifying defects in Al and TiSi interconnectsNikawa, K. et al.
- 889
-
A new adaptive amplifier for biased electron beam induced current applicationsCiappa, M. et al.
- 895
-
Detailed Investigation of SEM-results by TEM at one Sample Using FIB-techniqueMühle, U. et al.
- 901
-
Induced damages on CMOS and bipolar integrated structures under focused ion beam irradiationBenbrik, J. et al.
- 907
-
Junction delineation and EBIC on FIB cross sectionPerez, G. et al.
- 913
-
Direct Observation of Local Strain Field for ULSI DevicesHashikawa, N. et al.
- 919
-
A new experimental technique to evaluate the plasma induced damage at wafer level testingPantisano, L. et al.
- 925
-
Low frequency noise analysis as a diagnostic tool to assess the quality of 0.25 mm Ti-silicided poly linesVandamme, E.P. et al.
- 931
-
Hot carrier degradation mechanisms in sub-micron p channel MOSFETs: Impact on low frequency (1-f) noise behaviourSheehan, E. et al.
- 937
-
Reliability of nitrided wet silicon dioxide thin films in WSi2 or TaSi2 polycide process: influence of the nitridation temperatureYckache, K. et al.
- 943
-
Assembly and analysis of quantum devices using SPM based methodsMontelius, Lars et al.
- 951
-
Circuit internal logic analysis with Electric Force Microscope- (EFM-) testingBangert, J. et al.
- 957
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Failure analysis of integrated devices by Scanning Thermal Microscopy (SThM)Fiege, G.B.M. et al.
- 963
-
Scanning near-field optical microscopy analyses of electronic devicesCramer, R.M. et al.
- 969
-
A new test method for contactless quantitative current measurement via scanning magneto-resistive probe microscopyBae, S. et al.
- 975
-
Automatic Fault Tracing by Successive Circuit Extraction from CAD Layout Data with the CAD-Linked EB Test SystemMiura, K. et al.
- 981
-
Cantilever influence suppression of contactless IC-testing by electric force microscopyWittpahl, V. et al.
- 987
-
Application of Layout Overlay for Failure AnalysisBurmer, C. et al.
- 993
-
Failure Analysis of Wafer using Backside OBIC MethodIto, Seigo et al.
- 997
-
ESD protection methodology for deep-sub-micron CMOSBock, K. et al.
- 1009
-
Overview of the kinetics of the early stages of electromigration under low (= realistic) current density stressVan Olmen, J. et al.
- 1015
-
Effects of alloying elements on electromigrationSpolenak, R. et al.
- 1021
-
A comparison between normally and highly accelerated electromigration testsFoley, S. et al.
- 1029
-
Electromigration failure modes in damascene copper interconnectsArnaud, L. et al.
- 1035
-
The dependence of stress induced voiding on line width studied by conventional and high resolution resistance measurementsWitvrouw, A. et al.
- 1041
-
Lateral interface effect on pulsed DC electromigration analysisWaltz, P. et al.
- 1047
-
Mechanical Stress Evolution and the Blech Length: 2D Simulation of Early Electromigration EffectsPetrescu, V. et al.
- 1051
-
Systematic Derivation of Latchup Design Rules for Submicron CMOS Processes from Test Structuresvan der Pol, J.A. et al.
- 1057
-
Reversibility of charge trapping and SILC creation in thin oxides after stress-anneal cyclingRiess, P. et al.
- 1063
-
Precise quantitative evaluation of the hot-carrier induced drain series resistance degradation in LATID-n-MOSFETsWalter, Georg H. et al.
- 1069
-
On-wafer heating tests to study stability of silicon devicesManic, D. et al.
- 1075
-
Characterization of SILC in thin-oxides by using MOSFET substrate currentDe Salvo, B. et al.
- 1081
-
Hot Carrier Induced Device Degradation in RF-nMOSFET'sJong, Tae Park et al.
- 1085
-
The effect of hot electron current density on nMOSFET reliabilityBuiu, O. et al.
- 1091
-
Dependence of gate oxide breakdown on initial charge trapping under Fowler-Nordheim injectionMartin, A. et al.
- 1097
-
Modelling and simulation of hot-carriers degradation of high voltage floating lateral NDMOS transistorsVandenbossche, Eric et al.
- 1103
-
A new hot carrier degradation law for MOSFET lifetime predictionMarchand, B. et al.
- 1109
-
Recovery and stress dynamics in bipolar transistors and MOS devicesIngvarson, F. et al.
- 1115
-
Electrical parameters degradation law of MOSFET during ageingMourrain, Ch et al.
- 1121
-
Investigation Of The Intrinsic SiO2 Area Dependence Using TDDB Testing And Model Integration Into The Design ProcessPrendergast, James et al.
- 1127
-
Two-step stress method for the dynamic testing of very thin (8 nm) SiO2 filmsRodriguez, R. et al.
- 1133
-
Temperature dependence of snap-back breakdown up to 300(degree)C analyzed using circuit level model and simulationUffmann, Dirk et al.
- 1139
-
Modelling the Field Soft Error Rate of DRAMs by varying the critical cell chargeSchleifer, Horst et al.
- 1143
-
Design of a Low EMI Susceptibility CMOS Transimpedance Operational AmplifierSetti, Gianluca et al.
- 1149
-
Gate bias stress in hydrogenated and unhydrogenated polysilicon thin film transistorsTala-Ighil, B. et al.
- 1155
-
Use of wafer maps in integrated circuit manufacturingHansen, C.K. et al.
- 1165
-
Field failure analysis on transmission data equipment due to lightning dischargesDiaz, E.Mino et al.
- 1171
-
Comparison between field reliability and new prediction methodology on avionics embedded electronicsCharpenel, P. et al.
- 1177
-
Improved reliability of bistable circuits by selective hot-carrier stress reductionDas, A.G.M. et al.
- 1183
-
A study of NMOS behavior under ESD stress: simulation and characterizationWang, Albert Z. et al.
- 1187
-
The time of "guessing" your failure time distribution is over!Croes, K. et al.
- 1193
-
Extended noise analysis - a novel tool for reliability screeningHärtler, Gisela et al.
- 1199
-
Study of degradation mechanisms in compound semiconductor based devices by SEM-cathodoluminescenceSalviati, G. et al.
- 1211
-
Degradation Behavior in InGaAs-GaAs Strained-Quantum Well LasersTakeshita, Tatsuya et al.
- 1215
-
Early signatures for REDR-based laser degradationsBonfiglio, A. et al.
- 1221
-
Coupling technology impact on low-cost laser modules performances and reliabilityMorin, Marie et al.
- 1227
-
Failure mechanisms of Schottky gate contact degradation and deep traps creation in AlGaAs-InGaAs PM-HEMTs submitted to accelerated life testsMeneghesso, G. et al.
- 1233
-
Pulsed current stress of Berillium doped AlGaAs-GaAs HBTsCattani, L. et al.
- 1239
-
Degradation of performance in MESFETs and HEMTs: simulation and measurement of reliabilityFeng, Ting et al.
- 1245
-
A new method for temperature mapping on GaAs field effect transistorsMartin, E. et al.
- 1251
-
Reliability of industrial packaging for microsystemsde Reus, R. et al.
- 1261
-
Analysis of thermomechanical stresses in a 3D packaged micro electro mechanical systemPellet, C. et al.
- 1265
-
Electrical characterization and modification of a MicroElectroMechanical System (MEMS) for extended mechanical reliability and fatigue testingMeunier, D. et al.
- 1271
-
Structures for piezoresistive measurement of package induced stress in transfer molded silicon pressure sensorsNysaether, J.B. et al.
- 1277
-
Electronic systems packaging: future reliability challengesBarrett, J. et al.
- 1287
-
A concept to relate wire bonding parameters to bondability and ball bond reliabilityLiang, Z.N. et al.
- 1293
-
Measurement of the thermomechanical behaviour of the solder-lead interface in solder joints by laser probing: a new method for measuring the bond qualityDilhaire, S. et al.
- 1297
-
Experimental design and evaluation of interconnection materials for improvement of joint reliability at power transistorsJansson, P. et al.
- 1301
-
Crack Mechanism in Wire Bonding JointsRamminger, S. et al.
- 1307
-
Materials interfaces in flip chip interconnects for optical components; performance and degradation mechanismsEsser, Robert H. et al.
- 1313
-
A study of soldering heat evaluation for SMDsEtoh, Yoshihiro et al.
- 1319
-
Advanced IGBT modules for railway traction applications: Reliability testingBerg, H. et al.
- 1325
-
Some observation dealing with the failures of IGBT transistors in high power convertersJanuszewski, S. et al.
- 1331
-
Strain depending reliability of automotive diodesGalateanu, L. et al.
- 1335
-
Extrapolation of cosmic ray induced failures from test to field conditions for IGBT modulesFindeisen, C. et al.
- 1341
-
Thermomechanical deformation imaging of power devices by Electronic Speckle Pattern Interferometry (ESPI)Nassim, K. et al.
- 1347
-
On the effect of power cycling stress on IGBT modulesCova, P. et al.
- 1353
-
Temperature measurements and thermal modeling of high power IGBT multichip modules for reliability investigations in traction applicationsHamidi, A. et al.
- 1361
-
On-Chip Reliability Investigations on Power Modules Actually Working in Inverter SystemsFranke, T. et al.