Titanium carbide film deposition by DC magnetron reactive sputtering using a solid carbon source (English)
- New search for: Kusano, E.
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In:
Thin solid films
;
343
, 1
; 252-254
;
1999
-
ISSN:
- Article (Journal) / Print
-
Title:Titanium carbide film deposition by DC magnetron reactive sputtering using a solid carbon source
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Contributors:
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Published in:Thin solid films ; 343, 1 ; 252-254
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Place of publication:Amsterdam [u.a.] Elsevier
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Publication date:1999
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ISSN:
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ZDBID:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
- New search for: 33.68
- Further information on Basic classification
- New search for: 535/3485
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Keywords:
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Source:
Table of contents – Volume 343, Issue 1
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
-
Modelling thin film growth: Monte-Carlo models of fullerite filmsSmith, Roger et al. | 1999
- 5
-
Columnar growth structure and evolution of wavy interface morphology in amorphous multilayered thin filmsCziganyczigány, Zs et al. | 1999
- 9
-
Evolution of crystals during vacuum depositionBochkarev, A.A. et al. | 1999
- 13
-
Reactive co-evaporation of Si and Ge in oxygen atmospheresSangrador, J. et al. | 1999
- 17
-
Dependence of carbon interatomic bonds on incident ion energy in carbon negative ion beam deposited filmsTsuji, Hiroshi et al. | 1999
- 21
-
Preparation of MgxNi thin films by RF-DC coupled magnetron sputteringSuzuki, M. et al. | 1999
- 24
-
A hybrid simulation of high pressure sputtering, combining the Monte Carlo method and the diffusive approachNakano, T. et al. | 1999
- 27
-
Tunneling spectrum characteristic reflecting discrete energy levels in Pb(Tl)Te FilmsMurakami, H. et al. | 1999
- 30
-
Bayesian error analysis of Rutherford backscattering spectraBarradas, N.P. et al. | 1999
- 34
-
Non-destructive chemical analysis of sandwich structures by means of soft X-ray emissionGalnandergålnander, B. et al. | 1999
- 38
-
The control of film stress using ionised magnetron sputter depositionChiu, K.F. et al. | 1999
- 42
-
The influence of silver on the structure and mechanical properties of (TiAl)-based intermetallicsVieira, M.T. et al. | 1999
- 46
-
Magnetron sputtering of alloy and alloy-based filmsMusil, J. et al. | 1999
- 50
-
The oxidation behaviour of mixed tungsten silicon sputtered coatingsLouro, C. et al. | 1999
- 56
-
Effect of DC bias on the deposition rate using RF-DC coupled magnetron sputtering for Mg thin filmsTanaka, T. et al. | 1999
- 59
-
Formation of pure thin films by means of self-sputtering depositionHorino, Y. et al. | 1999
- 62
-
MgO thin film deposition using TVA (thermoionic vacuum arc)Ehrich, H. et al. | 1999
- 66
-
Effect of surface roughness on magnetic properties of Fe films deposited by dual ion beam sputteringIwatsubo, S. et al. | 1999
- 70
-
An estimation of optimum Ar ion bombardment energy for good Fe films applying thermal spike effectIwatsubo, S. et al. | 1999
- 74
-
The influence of ion bombardment intensity during deposition on nickel films microstructurePopovic, N. et al. | 1999
- 80
-
Energetic oxygen particles in the reactive sputtering of Zn targets in Ar-O2 atmospheresTominaga, K. et al. | 1999
- 84
-
Pulsed magnetron sputtering of reactive compoundsPosadowski, W.M. et al. | 1999
- 89
-
Reactive pulsed laser deposition of piezoelectric and ferroelectric thin filmsCraciun, F. et al. | 1999
- 93
-
Poole-Frenkel conductivity prior to electroforming in evaporated Au-SiOx-Au sandwich structuresGould, R.D. et al. | 1999
- 97
-
Epitaxial growth and transport properties of a-axis oriented Hg-cuprate thin filmsYun, S.H. et al. | 1999
- 100
-
Reduction of thin oxide layer on Fe60Ni40 substrates in hydrogen plasmasMozeticmozetic, M. et al. | 1999
- 103
-
Electrical characterisation of RF sputtered tantalum oxide films rapid thermal annealed with Ar, N2, O2 and N2OChoi, W.K. et al. | 1999
- 106
-
Electrical and structural properties of rapid thermal annealed RF sputtered silicon oxide filmsChoi, W.K. et al. | 1999
- 109
-
Halide chemical vapour deposition of Ta2O5Forsgren, Katarina et al. | 1999
- 113
-
The properties of reactively-sputtered, stoichiometry-controlled and optimum-conductivity transparent indium oxide films as a function of their titanium, aluminium and zinc content; comparisons with the use of tin as a dopantSafi, I. et al. | 1999
- 117
-
Palladium silicide-oxide formations in Pd-Si2 Complex FilmsIchinohe, T. et al. | 1999
- 121
-
Annealing effects of CuInSe2 films prepared by pulsed laser deposition.Kuranouchi, S. et al. | 1999
- 124
-
Epitaxial growth of nitride semiconductor films by laser ablationYoshida, A. et al. | 1999
- 127
-
Transparent conductive ZnO:Al films by reactive co-sputtering from separate metallic Zn and Al targetsFenske, F. et al. | 1999
- 131
-
Characterization of mechanical properties of VO2 thin films on sapphire and silicon by ultra-microindentationJin, P. et al. | 1999
- 135
-
An effect of preheat-treatment on the formation of titanium-oxide films by sintering a titanium-silicon-oxide structure in an oxygen atmosphereYokota, K. et al. | 1999
- 139
-
Transparent conductive tin oxide films by photochemical vapour depositionTamura, S. et al. | 1999
- 142
-
Preparation of ZnO films by atmospheric pressure chemical-vapor deposition using zinc acetylacetonate and ozoneHaga, K. et al. | 1999
- 145
-
Investigation of SiO2 deposition processes with mass spectrometry and optical emission spectroscopy in plasma enhanced chemical vapor deposition using tetraethoxysilaneHorii, Naohiro Maeda et al. | 1999
- 149
-
Reactively sputtered TiO2-x with plasma-emission-controlled departure from stoichiometryZakrzewska, K. et al. | 1999
- 153
-
Novel methods for preparation of ion-exchangeable thin filmsAbe, Ryu et al. | 1999
- 157
-
Properties of films of multilayered ZnO:Al and ZnO deposited by an alternating sputtering methodTominaga, K. et al. | 1999
- 161
-
Abnormal residual stress state in ZnO films synthesized by planar magnetron sputtering system with two facing targetsHanabusa, Takao et al. | 1999
- 165
-
Vanadium oxide thin films deposited onto Cu buffer layer by RF magnetron sputteringMiyazaki, Hidetoshi et al. | 1999
- 168
-
Ordering of PVBA on amorphous SiO2 and Pd(110)Mullermüller, Bert et al. | 1999
- 172
-
Optical and electrical properties of embedded silver nanoparticles at low temperaturesHeilmann, A. et al. | 1999
- 176
-
Deep profiles of lithium in electrolytic structures of ITO-WO3 for electrochromic applicationsPorqueras, I. et al. | 1999
- 180
-
Study of electrochromic cells incorporating WO3, MoO3, WO3-MoO3 and V2O5 coatingsPapaefthimiou, S. et al. | 1999
- 184
-
Ellipsometric studies on thin silver films epitaxially grown on Si(111)Masten, A. et al. | 1999
- 188
-
Luminescence from hydrogenated amorphous silicon treated in microwave hydrogen plasma, KOH solution, and oxygen atmosphereYokota, Katsuhiro et al. | 1999
- 192
-
Preparation and optical transmittance of titanium hydride (deuteride) films by rf reactive sputteringNakao, Setsuo et al. | 1999
- 196
-
Preparation of CuIn(SxSe1-x)2 thin films by excimer laser ablation from binary compoundsYamamoto, Yukio et al. | 1999
- 199
-
Effect of a CdS interlayer in thermochromism and photochromism of MoO3 thin filmsQuevedo-Lopez, M.A. et al. | 1999
- 203
-
Intermixing in immiscible Co-Ag-Co trilayers under XeCl laser annealingD'Anna, E. et al. | 1999
- 207
-
Scaling behaviour and evolution of ferromagnetism in epitaxial Fe-GaAs(100) and Fe-InAs(100)Freeland, D.J. et al. | 1999
- 211
-
Formation of granular-like structure of Ag-Co multilayers by excimer laser irradiationMajkova, E. et al. | 1999
- 215
-
Magnetoresistive properties and microstructure of NiFe thin films and NiFe(t)-Cu(s)-NiFe(t) multilayer filmsNeamtu, Jenica et al. | 1999
- 219
-
Hard a-C:H films deposited at high deposition ratesLacerda, R.G. et al. | 1999
- 223
-
Influence of diamond crystal orientation on their tribological behaviour under various environmentsSchmitt, M. et al. | 1999
- 227
-
Effect of partial pressure on the internal stress and the crystallographic structure of rf reactive sputtered Ti-N filmsInoue, Shozo et al. | 1999
- 231
-
New Cr-B hard coatings by rf-plasma assisted magnetron sputtering methodZhou, M. et al. | 1999
- 235
-
Nanohardness and chemical bonding of boron nitride filmsJankowski, Alan F. et al. | 1999
- 239
-
Deposition and characterisation of TiAlBN coatings produced by direct electron-beam evaporation of Ti and Ti-Al-B-N material from a twin crucible sourceRebholz, C. et al. | 1999
- 244
-
Resistivity and structural defects of reactively sputtered TiN and HfN filmsAndo, Y. et al. | 1999
- 248
-
Deposition of boron carbon nitride films by dual cathode magnetron sputteringKusano, Y. et al. | 1999
- 252
-
Titanium carbide film deposition by DC magnetron reactive sputtering using a solid carbon sourceKusano, E. et al. | 1999
- 255
-
Residual stress in TiN film deposited by arc ion platingMatsue, Tatsuya et al. | 1999
- 259
-
Adhesive characteristics of Fe films deposited by ion beam sputtering with Ar ion bombardmentIwatsubo, S. et al. | 1999
- 263
-
The determination of nitrogen in Cr-N system by RBS and the weight gain techniquePanjan, Peter et al. | 1999
- 267
-
TEA CO2 laser-induced damage of low-thickness TiN coatingsGakovic, Biljana M. et al. | 1999
- 271
-
Structure and adhesive properties of TiN films reactively deposited by plasma-free sputteringTakahashi, Takakazu et al. | 1999
- 275
-
The metastability of porous silicon-crystalline silicon structurePincik, E. et al. | 1999
- 279
-
In situ ellipsometric studies of the a-Si:H growth using an expanding thermal plasmaSmets, A.H.M. et al. | 1999
- 283
-
Boron-induced electronic states in hydrogenated amorphous siliconLin, Shu-Ya et al. | 1999
- 286
-
Enhancement of crystallization of Si films on quartz substrates by electric fieldsHorita, Susumu et al. | 1999
- 290
-
Structural analysis of nanocrystalline SiC thin films grown on silicon by ECR plasma CVDToal, S.J. et al. | 1999
- 293
-
Complete optical characterization of imperfect hydrogenated amorphous silicon layers by spectroscopic ellipsometry and spectroscopic reflectometryFranta, D. et al. | 1999
- 296
-
LPCVD deposition of silicon nitride assisted by high density plasmasZambom, L.S. et al. | 1999
- 299
-
Effect of In-content on the misfit dislocation interaction in InGaAs-GaAs layersGonzalezgonzález, D. et al. | 1999
- 302
-
Electron microscopy study of SiC obtained by the carbonization of Si(111)Pacheco, F.J. et al. | 1999
- 306
-
Molecular arrangement of organic crystal N,N'-dimethylperylene-3,4,9,10-bis(dicarboximide) studied with metastable de-excitation spectroscopy and atomic force microscopyMochizuki, Kazuto et al. | 1999
- 310
-
A new type of CO2 sensor built up with plasma polymerized polyaniline thin filmTakeda, S. et al. | 1999
- 314
-
Effects of reduced growth temperature on crystalline qualities and dopant diffusion in Pbl-xSnxSe-PbSe layers grown by MBESuzuki, Masanobu et al. | 1999
- 317
-
Effect of substrate temperature on properties of thin films prepared by RF sputtering from CuInSe2 target with Na2SeTanaka, Tooru et al. | 1999
- 321
-
Structure of alumina oxide coatings deposited by impulse plasma methodZdunek, K. et al. | 1999
- 325
-
X-ray photoemission and photoreflectance study of Au-ultrathin Si-n-GaAs Schottky contacts and hydrogen plasma treated semi-insulating GaAs surfacesPincikpincik, E. et al. | 1999
- 329
-
ZnS wide band gap semiconductor thin film electronic structure sensitivity to Mn impurityVdovenkovatav, T. et al. | 1999
- 332
-
Composition and properties of thin solid films on porous silicon surfaceMonastyrskii, L. et al. | 1999
- 335
-
Deposition and properties of plasma polymer films made from thiophenesKiesow, A. et al. | 1999
- 339
-
Preparation and Properties of Boron Thin FilmsKamimura, Kiichi et al. | 1999
- 342
-
Blue light emitting laser diodesNakamura, Shuji et al. | 1999
- 351
-
In situ observation of a high-temperature Si(001) surface during SiH2Cl2 exposure by photoelectron spectroscopyHori, Toyokazu et al. | 1999
- 358
-
Hydrofluoric acid etching of ultra thin silicon oxide film fabricated by high purity ozoneNakamura, Ken et al. | 1999
- 361
-
Lattice strain in oxidized Si nanostructure arrays from X-ray measurementsTanaka, S. et al. | 1999
- 366
-
Modeling of SiO2-Si(100) interface structure by using extended Stillinger-Weber potentialWatanabe, Takanobu et al. | 1999
- 370
-
Extremely smooth surface morphologies in N2-H2-CH4 based low energy chemically assisted ion beam etching of InP-GaInAsPCarlstromcarlström, C.F. et al. | 1999
- 374
-
Anisotropic inductively coupled plasma etching of silicon with pure SF6Mansano, R.D. et al. | 1999
- 377
-
Effects of plasma etching on DLC filmsMassi, M. et al. | 1999
- 381
-
Spectroscopic ellipsometry characterization of strained interface region in thermally oxidized Si(111)Szekeres, A. et al. | 1999
- 385
-
Oxidation kinetics of hydrogen-enriched (100) and (111) Si surface >Alexandrova, S. et al. | 1999
- 388
-
Evaluation of the initial oxidation of heavily phosphorus doped silicon surfaces using angle-dependent X-ray photoelectron spectroscopyYing, W.B. et al. | 1999
- 392
-
Interaction of H2O clusters with hydrogen-terminated and clean Si(001) surfacesAkagi, Kazuto et al. | 1999
- 396
-
Compositional and structural transition layer studied by the energy loss of O 1s photoelectronsNohira, H. et al. | 1999
- 399
-
Hydrogen adsorption and desorption on SiGe investigated by in situ surface infrared spectroscopyHirose, Fumihiko et al. | 1999
- 403
-
Influences of deuterium atoms on local bonding structures of SiO2 studied by HREELSIkeda, Hiroya et al. | 1999
- 407
-
On the kinetics of generation of point defects in the Si-SiO2 systemKronman, D. et al. | 1999
- 411
-
Argon plasma sputter etching induced defect levels in strained, epitaxial p-type Si-Ge alloysMamor, M. et al. | 1999
- 415
-
Radiation enhanced growth rates during plasma oxidation of siliconBuiu, O. et al. | 1999
- 418
-
REM studies of the roughening transitions of Si high index surfacesSuzuki, T. et al. | 1999
- 422
-
Real-time diagnostics of growth of silicon-germanium alloys on hydrogen-terminated and oxidized silicon (111) surfaces by spectroscopic ellipsometryHess, Peter et al. | 1999
- 428
-
Optical absorption in amorphous hydrogenated silicon nitride thin films deposited by the electron cyclotron resonance plasma method and subjected to rapid thermal annealingMartnezmartinez, F.L. et al. | 1999
- 432
-
Full composition range silicon oxynitride films deposited by ECR-PECVD at room temperaturedel Prado, A. et al. | 1999
- 436
-
Infra-red, X-ray photoelectron spectroscopy and electrical studies of rf sputtered amorphous silicon carbide filmsHan, L.J. et al. | 1999
- 440
-
Hydrogen in amorphous germanium-carbonVilcarromero~ao Paulo, J. et al. | 1999
- 444
-
Optical and electrical characterisation of Ta2O5 thin films for ionic conduction applicationsPorgueras, I. et al. | 1999
- 448
-
Effect of deposition conditions of buffer layer on the characteristics of (Ba,Sr)TiO3 thin films fabricated by a self-buffering processKil, Deok-Sin et al. | 1999
- 452
-
Formation of Si-based organic thin films with low dielectric constant by using remote plasma enhanced chemical vapor deposition from hexamethyldisiloxaneFujii, Toshiaki et al. | 1999
- 456
-
Relationship of grain nanostructure and orientation in whisker growth on aluminum thin films on glass substratesTakatsuija, Hiroshi et al. | 1999
- 459
-
The influence of cooling water flowing in the sputtering target on aluminum based thin film nanostructure deposited on glass substrateTakatsuji, Hiroshi et al. | 1999
- 463
-
Electrical properties of polymer-Si heterojunctionsMusa, I. et al. | 1999
- 470
-
Excitation energy dependence of luminescent sol-gel organically modified silicatesSa Ferreirasá Ferreira, R.A. et al. | 1999
- 475
-
Plasmon loss features of germanium nanocrystals fabricated by the cluster beam evaporation techniqueSato, S. et al. | 1999
- 478
-
Photoinduced changes of the structure and index of refraction of amorphous As-S filmsPolák, Z. et al. | 1999
- 482
-
Thermally and photoinduced changes of structure and optical properties of As-G-S amorphous films and glassesFrumar, M. et al. | 1999
- 486
-
Kelvin Probe Study of Metastable States during initial Oxygen Adsorption Dynamics on Si(111) 7x7Petermann, U. et al. | 1999
- 489
-
Recent understandings of elementary growth processes in MBE of GaAsNishinaga, T. et al. | 1999
- 494
-
Optimizing GaSb(111) and GaSb(001) surfaces for epitaxial film growthSolomon, J.S. et al. | 1999
- 498
-
Homoepitaxial growth of ZnTe by synchrotron radiation using metalorganic sourcesNishio, Mitsuhiro et al. | 1999
- 502
-
Ohmic contacts to p-type ZnTe using electroless PdNishio, Mitsuhiro et al. | 1999
- 506
-
Effect of dopant flow rate upon photoluminescence properties in aluminum-doped ZnTe layers grown by MOVPENishio, Mitsuhiro et al. | 1999
- 510
-
Preparation and characterization of (Cd,Zn)S thin films by chemical bath deposition for photovoltaic devicesYamaguchi, Toshiyuki et al. | 1999
- 514
-
Selective electrochemical profiling of threading defects in mismatched heteroepitaxial systemsNemcsics, Ákos et al. | 1999
- 518
-
Effects of nitrogen-argon ratio on composition and structure of InN films prepared by r.f. magnetron sputteringGuo, Qixin et al. | 1999
- 522
-
Surface cleaning and nitridation of compound semiconductors using gas-decomposition reaction in Cat-CVD methodsIzumi, Akira et al. | 1999
- 526
-
Instability of 2D Ge layer near the transition to 3D islands on Si(111)Shklyaev, Alexander A. et al. | 1999
- 531
-
Point defects, dopant atoms, and compensation effects in CdSe and CdS cleavage surfacesSiemens, B. et al. | 1999
- 535
-
Doping and electrical characteristics of in situ heavily B-doped Si1-xGex films epitaxially grown using ultraclean LPCVDMoriya, Atsushi et al. | 1999
- 538
-
Structura1 analysis of epitaxial TiAg-MgO superlattices prepared by multi-evaporationKado, T. et al. | 1999
- 543
-
Initial stage oxidation at an unpaired dangling bond site on a Si(100)-2x1-H surfaceKajiyama, Hiroshi et al. | 1999
- 547
-
Incorporation of Ga metalorganic precursors during transients at the start of GaAs growth in CBEHill, D. et al. | 1999
- 551
-
Influence of substrate misorientation on the structural characteristics of InGaAs-GaAs MQW on (111)B GaAs grown by MBEGutierrezgutiérrez, M. et al. | 1999
- 555
-
Effects of initial surface states on formation processes of epitaxial CoSi2(100) on Si(100)Hayashi, Yukihiro et al. | 1999
- 560
-
The (3x3) reconstruction and its evolution during the nitridation of GaAs(001)Lu, J. et al. | 1999
- 564
-
Low temperature growth of p-type crystalline silicon films by ECR plasma CVDWang, Licai et al. | 1999
- 568
-
Raman and reflection anisotropy spectroscopic studies of GaN and AlN growth on GaAs(100)Chalker, Paul R. et al. | 1999
- 572
-
Bi surfactant mediated epitaxy of Ge on Si(111)Horn-von Hoegen, M. et al. | 1999
- 576
-
XPS and TOFSIMS studies of shallow Si-Si1-xGex-Si layersConard, T. et al. | 1999
- 580
-
Pbs-Cds bilayers prepared by the chemical bath deposition technique at different reaction temperaturesOrozco-Teranorozco-Terán, R.A. et al. | 1999
- 584
-
Piezoelectric photoacoustic spectra of CuInSe2 thin film grown by molecular beam epitaxyYoshino, Kenji et al. | 1999
- 587
-
Low temperature epitaxial growth of CeO2(110) layers on Si(100) using electron beam assisted evaporationInoue, Tomoyasu et al. | 1999
- 591
-
Co-sputtered Ru-Ti alloy electrodes for DRAM applicationsHorng, R.H. et al. | 1999
- 595
-
Implantation of silicon using the boron cluster BF2Smith, Roger et al. | 1999
- 598
-
Effect of a ZnSe intralayer on the Si-Ge(111) heterojunction band offsetsPan, M. et al. | 1999
- 602
-
Cross-sectional specimen preparation from ICs downside for SEM and TEM-failure analyses using focused ion beam etchingAltmann, F. et al. | 1999
- 605
-
Surfactant effect of atomic hydrogen on silicide-formation of nickel on Si(110) surfacesUeda, Kazuyuki et al. | 1999
- 609
-
Wide bandgap semiconductor materials for high temperature electronicsChalker, Paul R. et al. | 1999
- 616
-
The effect of hydrogen on the electronic properties of CVD diamond filmsLooi, Hui Jin et al. | 1999
- 620
-
Influence of B- and N-doping levels on the quality and morphology of CVD diamondEccles, A.J. et al. | 1999
- 625
-
Bond formation in ion beam synthesised amorphous gallium nitrideAlmeida, S.A. et al. | 1999
- 630
-
Characterization of ohmic and Schottky contacts on SiCKakanakova-Georgieva, A. et al. | 1999
- 635
-
A research on the persistent photoconductivity behavior of GaN thin films deposited by r.f. magnetron sputteringHorng, R.H. et al. | 1999
- 639
-
Growth of GaAs1-xNx on GaAs (100) by chemical beam epitaxyAardahl, C.L. et al. | 1999
- 643
-
Low-temperature epitaxial growth of cubic SiC thin films on Si(111) using supersonic molecular jet of single source precursorsBoo, Jin-Hyo et al. | 1999