TUTORIALS - FLIP-chip and "backside" techniques (English)
- New search for: Barton, D.L.
- New search for: Barton, D.L.
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In:
Microelectronics reliability
;
39
, 6-7
; 721-730
;
1999
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ISSN:
- Article (Journal) / Print
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Title:TUTORIALS - FLIP-chip and "backside" techniques
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Contributors:
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Published in:Microelectronics reliability ; 39, 6-7 ; 721-730
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Publisher:
- New search for: Elsevier
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Place of publication:Amsterdam [u.a.]
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Publication date:1999
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ISSN:
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ZDBID:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
- New search for: 275/5670
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Keywords:
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Source:
Table of contents – Volume 39, Issue 6-7
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 721
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FLIP-chip and ''backside'' techniquesBarton, D.L. / Bernhard-Hofer, K. / Cole, E.I. et al. | 1999
- 721
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TUTORIALS - FLIP-chip and "backside" techniquesBarton, D.L. et al. | 1999
- 731
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New tools for yield improvement in integrated circuit manufacturing: can they be applied to reliability?McDonald, C.J. et al. | 1999
- 731
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TUTORIALS - New tools for yield improvement in integrated circuit manufacturing: Can they be applied to reliability?McDonald, C.J. et al. | 1999
- 741
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Reliability versus yield and die location in advanced VLSIRiordan, W.C. / Miller, R. / Hicks, J. et al. | 1999
- 741
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TOPIC A: QUALITY AND RELIABILITY - Invited Paper - Reliability versus yield and die location in advanced VLSIRiordan, W.C. et al. | 1999
- 751
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TOPIC A: QUALITY AND RELIABILITY - Junction parameters for silicon devices characterizationBardonnie, M.De La et al. | 1999
- 751
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Junction parameters for silicon devices characterizationde la Bardonnie, M. / Toufik, N. / Salame, C. / Dib, S. / Mialhe, P. / Hoffmann, A. / Charles, J.-P. et al. | 1999
- 755
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Assessment of worst case dielectric failure rate based on statistical samples with pure intrinsic failure distributionsKerber, M. et al. | 1999
- 755
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TOPIC A: QUALITY AND RELIABILITY - Assessment of worst case dielectric failure rate based on statistical samples with pure intrinsic failure distributionsKerber, M. et al. | 1999
- 759
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TOPIC A: QUALITY AND RELIABILITY - New rapid method for lifetime determination of gate oxide validated with bipolar-CMOS-DMOS technologyGagnard, X. et al. | 1999
- 759
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New rapid method for lifetime determination of gate oxide validated with Bipolar/CMOS/DMOS technologyGagnard, X. / Taurin, M. / Bonnaud, O. et al. | 1999
- 765
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A universal reliability prediction model for SMD integrated circuits based on field failuresKervarrec, G. / Monfort, M. / Riaudel, A. / Klimonda, P. / Coudrin, J. / Le Razavet, D. / Boulaire, J. / Jeanpierre, P. / Perie, D. / Meister, R. et al. | 1999
- 765
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TOPIC A: QUALITY AND RELIABILITY - A universal reliability prediction model for SMD integrated circuits based on field failuresKervarrec, G. et al. | 1999
- 773
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Influence of pulsed DC current stress on Electromigration results in AlCu interconnections; analysis of thermal and healing effectsArnaud, L. / Reimbold, G. / Waltz, P. et al. | 1999
- 773
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TOPIC B: MODELLING OF FAILURE MECHANISMS: ESD, ELECTROMIGRATION, OXIDE AND MOS - Invited Paper - Influence of pulsed DC current stress on electromigration results in AlCu interconnections; analysis of thermal and healing effectsArnaud, L. et al. | 1999
- 785
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Modelling hot-carrier degradation of LDD NMOSFETs by using a high-resolution measurement techniqueDreesen, R. / Croes, K. / Manca, J. / De Ceuninck, W. / De Schepper, L. / Pergoot, A. / Groeseneken, G. et al. | 1999
- 785
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TOPIC B: MODELLING OF FAILURE MECHANISMS: ESD, ELECTROMIGRATION, OXIDE AND MOS - Modelling hot-carrier degradation of LDD NMOSFETs by using a high-resolution measurement techniqueDreesen, R. et al. | 1999
- 791
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Model For The Oxide Thickness Dependence Of SILC Generation Based On Anode Hole Injection ProcessJahan, C. / Bruyere, S. / Ghibaudo, G. / Vincent, E. / Barla, K. et al. | 1999
- 791
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TOPIC B: MODELLING OF FAILURE MECHANISMS: ESD, ELECTROMIGRATION, OXIDE AND MOS - Model for the oxide thickness dependence of SILC generation based on anode hole injection processJahan, C. et al. | 1999
- 797
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TOPIC B: MODELLING OF FAILURE MECHANISMS: ESD, ELECTROMIGRATION, OXIDE AND MOS - Study of stress induced leakage current by using high resolution measurementsSalvo, B.De et al. | 1999
- 797
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Study of Stress Induced Leakage Current by using high resolution measurementsDe Salvo, B. / Ghibaudo, G. / Pananakakis, G. / Guillaumot, B. / Reimbold, G. et al. | 1999
- 803
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TOPIC B: MODELLING OF FAILURE MECHANISMS: ESD, ELECTROMIGRATION, OXIDE AND MOS - Modelling of the temperature and electric field dependence of substrate-gate current SILC with an elastic resonant trap assisted tunnelling mechanismRiess, P. et al. | 1999
- 803
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Modelling of the temperature and electric field dependence of substrate/gate current SILC with an elastic resonant trap assisted tunnelling mechanismRiess, P. / Ghibaudo, G. / Pananakakis, G. et al. | 1999
- 809
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Temperature Dependence of Hot Carrier Induced MOSFET Degradation at Low Gate BiasHong, S.H. / Nam, S.M. / Yun, B.O. / Lee, B.J. / Yu, C.G. / Park, J.T. et al. | 1999
- 809
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TOPIC B: MODELLING OF FAILURE MECHANISMS: ESD, ELECTROMIGRATION, OXIDE AND MOS - Temperature dependence of hot carrier induced MOSFET degradation at low gate biasHong, S.H. et al. | 1999
- 815
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TOPIC B: MODELLING OF FAILURE MECHANISMS: ESD, ELECTROMIGRATION, OXIDE AND MOS - Temperature acceleration of breakdown and quasi-breakdown phenomena in ultra-thin oxidesBruyère, S. et al. | 1999
- 815
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Temperature Acceleration of Breakdown and Quasi-Breakdown Phenomena in Ultra-thin OxidesBruyere, S. / Roy, D. / Vincent, E. / Ghibaudo, G. et al. | 1999
- 821
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Trapping Mechanisms in Negative Bias Temperature Stressed p-MOSFETsSchlunder, C. / Brederlow, R. / Wieczorek, P. / Dahl, C. / Holz, J. / Rohner, M. / Kessel, S. / Herold, V. / Goser, K. / Weber, W. et al. | 1999
- 821
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TOPIC B: MODELLING OF FAILURE MECHANISMS: ESD, ELECTROMIGRATION, OXIDE AND MOS - Trapping mechanisms in negative bias temperature stressed p-MOSFETsSchlünder, C. et al. | 1999
- 827
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TOPIC B: MODELLING OF FAILURE MECHANISMS: ESD, ELECTROMIGRATION, OXIDE AND MOS - Depassivation of latent plasma damage in pMOS devicesPantisano, L. et al. | 1999
- 827
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Depassivation of latent plasma damage in pMOS devicesPantisano, L. / Paccagnella, A. / Colombo, P. / Valentini, M.G. et al. | 1999
- 833
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Extended SPICE-like model accounting for layout effects on snapback phenomenon during ESD eventsSalome, P. / Richier, C. / Essaifi, S. / Leroux, C. / Zaza, I. / Juge, A. / Mortini, P. et al. | 1999
- 833
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TOPIC B: MODELLING OF FAILURE MECHANISMS: ESD, ELECTROMIGRATION, OXIDE AND MOS - Extended SPICE-like model accounting for layout effects on snapback phenomenon during ESD eventsSalome, P. et al. | 1999
- 839
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TOPIC B: MODELLING OF FAILURE MECHANISMS: ESD, ELECTROMIGRATION, OXIDE AND MOS - HBM and TLP ESD robustness in smart-power protection structuresSantirosi, S. et al. | 1999
- 839
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HBM and TLP ESD robustness in smart-power protection structuresSantirosi, S. / Meneghesso, G. / Novarini, E. / Contiero, C. / Zanoni, E. et al. | 1999
- 845
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Wafer mapping of ESD performanceReiner, J.C. / Schroder, H.-U. / Bender, M. et al. | 1999
- 845
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TOPIC B: MODELLING OF FAILURE MECHANISMS: ESD, ELECTROMIGRATION, OXIDE AND MOS - Wafer mapping of ESD performanceReiner, J.C. et al. | 1999
- 851
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TOPIC B: MODELLING OF FAILURE MECHANISMS: ESD, ELECTROMIGRATION, OXIDE AND MOS - Ageing of laser crystallized and unhydrogenated polysilicon thin film transistorsRahal, A. et al. | 1999
- 851
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Ageing of Laser Crystallized and Unhydrogenated Polysilicon Thin Film TransistorsRahal, A. / Mohammed-Brahim, T. / Toutah, H. / Tala-Ighil, B. / Helen, Y. / Prat, C. / Raoult, F. et al. | 1999
- 857
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TOPIC B: MODELLING OF FAILURE MECHANISMS: ESD, ELECTROMIGRATION, OXIDE AND MOS - A stochastic approach to failure analysis in electromigration phenomenaPennetta, C. et al. | 1999
- 857
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A Stochastic Approach to Failure Analysis in Electromigration PhenomenaPennetta, C. / Reggiani, L. / Trefan, G. / Fantini, F. / DeMunari, I. / Scorzoni, A. et al. | 1999
- 863
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TOPIC B: MODELLING OF FAILURE MECHANISMS: ESD, ELECTROMIGRATION, OXIDE AND MOS - New latchup mechanism in complementary bipolar power ICs triggered by backside die attach gluePol, J.A.Van Der et al. | 1999
- 863
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New Latchup Mechanism in Complementary Bipolar Power ICs Triggered by Backside Die Attach Gluevan der Pol, J.A. / Huijser, J.-P.F. / Basten, R.B.H. et al. | 1999
- 869
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Hot-hole-induced interface states build-up on deep-submicrometer LDD nMOSFETsRafi, J.M. / Campabadal, F. et al. | 1999
- 869
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TOPIC B: MODELLING OF FAILURE MECHANISMS: ESD, ELECTROMIGRATION, OXIDE AND MOS - Hot-hole-induced interface states build-up on deep-submicrometer LDD nMOSFETsRafi, J.M. et al. | 1999
- 875
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TOPIC B: MODELLING OF FAILURE MECHANISMS: ESD, ELECTROMIGRATION, OXIDE AND MOS - Transient induced latch-up triggered by very fast pulsesBonfert, D. et al. | 1999
- 875
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Transient Induced Latch-Up Triggered by Very Fast PulsesBonfert, D. / Gieser, H. et al. | 1999
- 879
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TOPIC B: MODELLING OF FAILURE MECHANISMS: ESD, ELECTROMIGRATION, OXIDE AND MOS - Extraction and evolution of Fowler-Nordheim tunneling parameters of thin gate oxides under EEPROM-like dynamic degradationCroci, S. et al. | 1999
- 879
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Extraction and evolution of Fowler-Nordheim tunneling parameters of thin gate oxides under EEPROM-like dynamic degradationCroci, S. / Voisin, J.M. / Plossu, C. / Raynaud, C. / Autran, J.L. / Boivin, P. / Mirabel, J.M. et al. | 1999
- 885
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TOPIC B: MODELLING OF FAILURE MECHANISMS: ESD, ELECTROMIGRATION, OXIDE AND MOS - Leakage current variation during two different modes of electrical stressing in undoped hydrogenated n-channel polysilicon thin film transistors (TFTs)Farmakis, F.V. et al. | 1999
- 885
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Leakage current variation during two different modes of electrical stressing in undoped hydrogenated n-channel polysilicon thin film transistors (TFTs)Farmakis, F.V. / Brini, J. / Kamarinos, G. / Dimitriadis, C.A. / Gueorguiev, V.K. / Ivanov, T.E. et al. | 1999
- 891
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TOPIC B: MODELLING OF FAILURE MECHANISMS: ESD, ELECTROMIGRATION, OXIDE AND MOS - Model-independent determination of the degradation dynamics of thin SiO2 filmsRodriguez, R. et al. | 1999
- 891
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Model-independent determination of the degradation dynamics of thin SiO"2 filmsRodriguez, R. / Nafria, M. / Miranda, E. / Sune, J. / Aymerich, X. et al. | 1999
- 897
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TOPIC B: MODELLING OF FAILURE MECHANISMS: ESD, ELECTROMIGRATION, OXIDE AND MOS - Reliability improvement of EEPROM by using WSi2 polycide gateOgier-Monnier, K. et al. | 1999
- 897
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Reliability improvement of EEPROM by using WSi2 polycide gateOgier-Monnier, K. / Boivin, P. / Bonnaud, O. et al. | 1999
- 903
-
TOPIC B: MODELLING OF FAILURE MECHANISMS: ESD, ELECTROMIGRATION, OXIDE AND MOS - Mercury-probe characterisation of soft breakdown: Effect of oxide thickness and measurement set-upCacciato, A. et al. | 1999
- 903
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Mercury-probe characterisation of soft breakdown: effect of oxide thickness and measurement set-upCacciato, A. / Evseev, S. et al. | 1999
- 909
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Advanced failure detection techniques in deep submicron CMOS integrated circuitsRubio, A. / Altet, J. / Mateo, D. et al. | 1999
- 909
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TOPIC C: ELECTRON AND OPTICAL BEAM TESTING - Invited Paper - Advanced failure detection techniques in deep submicron CMOS integrated circuitsRubio, A. et al. | 1999
- 919
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Fault localisation in ICs by goniometric laser probing of thermal induced surface wavesDilhaire, S. / Altet, J. / Jorez, S. / Schaub, E. / Rubio, A. / Claeys, W. et al. | 1999
- 919
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TOPIC C: ELECTRON AND OPTICAL BEAM TESTING - Fault localisation in ICs by goniometric laser probing of thermal induced surface wavesDilhaire, S. et al. | 1999
- 925
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Laser interferometric method for ns-time scale thermal mapping of Smart Power ESD protection devices during ESD stressFurbock, C. / Litzenberger, M. / Pogany, D. / Gornik, E. / Seliger, N. / Muller-Lynch, T. / Stecher, M. / Goszner, H. / Werner, W. et al. | 1999
- 925
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TOPIC C: ELECTRON AND OPTICAL BEAM TESTING - Laser interferometric method for ns-time scale thermal mapping of smart power ESD protection devices during ESD stressFurböck, C. et al. | 1999
- 931
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TOPIC C: ELECTRON AND OPTICAL BEAM TESTING - Validation of radiation hardened designs by pulsed laser testing and SPICE analysisPouget, V. et al. | 1999
- 931
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Validation of radiation hardened designs by pulsed laser testing and SPICE analysisPouget, V. / Lewis, D. / Lapuyade, H. / Briand, R. / Fouillat, P. / Sarger, L. / Calvet, M.-C. et al. | 1999
- 937
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TOPIC C: ELECTRON AND OPTICAL BEAM TESTING - Front- and backside investigations of thermal and electronic properties of semiconducting devicesFiege, G.B.M. et al. | 1999
- 937
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Front- and backside investigations of thermal and electronic properties of semiconducting devicesFiege, G.B.M. / Schade, W. / Palaniappan, M. / Ng, V. / Phang, J.C.H. / Balk, L.J. et al. | 1999
- 941
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TOPIC C: ELECTRON AND OPTICAL BEAM TESTING - A new AFM-based tool for testing dielectric quality and reliability on a nanometer scaleOlbrich, A. et al. | 1999
- 941
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A new AFM-based tool for testing dielectric quality and reliability on a nanometer scaleOlbrich, A. / Ebersberger, B. / Boit, C. / Vancea, J. / Hoffmann, H. et al. | 1999
- 947
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Sub-surface analyses of defects in integrated devices by scanning probe acoustic microscopyCramer, R.M. / Biletzki, V. / Lepidis, P. / Balk, L.J. et al. | 1999
- 947
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TOPIC C: ELECTRON AND OPTICAL BEAM TESTING - Sub-surface analyses of defects in integrated devices by scanning probe acoustic microscopyCramer, R.M. et al. | 1999
- 951
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TOPIC C: ELECTRON AND OPTICAL BEAM TESTING - Quantitative high frequency-electric force microscope testing of monolithic microwave integrated circuits at 20 GHzWittpahl, V. et al. | 1999
- 951
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Quantitative high frequency-electric force microscope testing of monolithic microwave integrated circuits at 20 GHzWittpahl, V. / Ney, C. / Behnke, U. / Mertin, W. / Kubalek, E. et al. | 1999
- 957
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Laser Beam Backside Probing of CMOS Integrated CircuitsKasapi, S. / Tsao, C.-C. / Wilsher, K. / Lo, W. / Somani, S. et al. | 1999
- 957
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TOPIC C: ELECTRON AND OPTICAL BEAM TESTING - Laser beam backside probing of CMOS integrated circuitsKasapi, S. et al. | 1999
- 963
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TOPIC C: ELECTRON AND OPTICAL BEAM TESTING - Electron beam testing of FPGA circuitsDesplats, R. et al. | 1999
- 963
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Electron Beam Testing of FPGA CircuitsDesplats, R. / Perdu, P. / Benteo, B. / Grangy, A. et al. | 1999
- 969
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TOPIC C: ELECTRON AND OPTICAL BEAM TESTING - Voltage contrast measurements on sub-micrometer structures with an electric force microscope based test systemBehnke, U. et al. | 1999
- 969
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Voltage contrast measurements on sub-micrometer structures with an electric force microscope based test systemBehnke, U. / Wand, B. / Mertin, W. / Kubalek, E. et al. | 1999
- 975
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TOPIC C: ELECTRON AND OPTICAL BEAM TESTING - A new bifunctional topography and current probe for scanning force microscope testing of integrated circuitsBae, S. et al. | 1999
- 975
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A new bifunctional topography and current probe for scanning force microscope testing of integrated circuitsBae, S. / Schiemann, K. / Mertin, W. / Kubalek, E. / Maywald, M. et al. | 1999
- 981
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Optical method for the measurement of the thermomechanical behaviour of electronic devicesDilhaire, S. / Jorez, S. / Cornet, A. / Schaub, E. / Claeys, W. et al. | 1999
- 981
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TOPIC C: ELECTRON AND OPTICAL BEAM TESTING - Optical method for the measurement of the thermomechanical behaviour of electronic devicesDilhaire, S. et al. | 1999
- 987
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TOPIC D: ADVANCED FAILURE ANALYSIS TECHNIQUES - Cross-section analysis of electric devices by scanning capacitance microscopeTakasaki, Y. et al. | 1999
- 987
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Cross-section analysis of electric devices by scanning capacitance microscopeTakasaki, Y. / Yamamoto, T. et al. | 1999
- 991
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TIVA and SEI developments for enhanced front and backside interconnection failure analysisCole, E.I. / Tangyunyong, P. / Benson, D.A. / Barton, D.L. et al. | 1999
- 991
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TOPIC D: ADVANCED FAILURE ANALYSIS TECHNIQUES - TIVA and SEI developments for enhanced front and backside interconnection failure analysisCole Jr, E.I. et al. | 1999
- 997
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Enhancing IC repairs by combining laser direct-writing of Cu and FIB techniquesRemes, J. / Moilanen, H. / Leppavuori, S. et al. | 1999
- 997
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TOPIC D: ADVANCED FAILURE ANALYSIS TECHNIQUES - Enhancing IC-repairs by combining laser direct-writing of Cu and FIB techniquesRemes, J. et al. | 1999
- 1003
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FIB Voltage Contrast Measurement for Enhanced Circuit RepairsDesplats, R. / Benteo, B. / Perdu, P. et al. | 1999
- 1003
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TOPIC D: ADVANCED FAILURE ANALYSIS TECHNIQUES - FIB voltage contrast measurement for enhanced circuit repairsDesplats, R. et al. | 1999
- 1009
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Improved SRAM Failure Diagnosis for Process Monitoring via Current Signature AnalysisSchienle, M. / Zanon, T. / Schmitt-Landsiedel, D. et al. | 1999
- 1009
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TOPIC D: ADVANCED FAILURE ANALYSIS TECHNIQUES - Improved SRAM failure diagnosis for process monitoring via current signature analysisSchienle, M. et al. | 1999
- 1015
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TOPIC D: ADVANCED FAILURE ANALYSIS TECHNIQUES - Failure analysis method by using different wavelengths lasers and its applicationIto, S. et al. | 1999
- 1015
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Failure Analysis Method by Using Different Wavelengths Lasers and Its ApplicationIto, S. / Tando, Y. et al. | 1999
- 1021
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TOPIC D: ADVANCED FAILURE ANALYSIS TECHNIQUES - Defect localization using voltage contrast IDDQ testingPerdu, P. et al. | 1999
- 1021
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Defect Localization using Voltage Contrast I"D"D"Q TestingPerdu, P. / Desplats, R. et al. | 1999
- 1027
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2D physical simulation of degradation on transistors induced by FIB exposure of dielectric passivationBenbrik, J. / Rolland, G. / Meunier, D. / Benteo, B. / Labat, N. / Maneux, C. / Danto, Y. et al. | 1999
- 1027
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TOPIC D: ADVANCED FAILURE ANALYSIS TECHNIQUES - 2D physical simulation of degradation on transistors induced by FIB exposure of dielectric passivationBenbrik, J. et al. | 1999
- 1033
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TOPIC E: RELIABILITY OF COMPOUND SEMICONDUCTORS - Invited Paper - Physics of degradation in GaAs-based heterojunction bipolar transistorsHenderson, T. et al. | 1999
- 1033
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Physics of degradation in GaAs-based heterojunction bipolar transistorsHenderson, T. et al. | 1999
- 1043
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Gold removal in Failure Analysis of GaAs-based laser diodesVanzi, M. / Bonfiglio, A. / Salaris, P. / Deplano, P. / Trogu, E.F. / Serpe, A. / Salmini, G. / De Palo, R. et al. | 1999
- 1043
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TOPIC E: RELIABILITY OF COMPOUND SEMICONDUCTORS - Gold removal in failure analysis of GaAs-based laser diodesVanzi, M. et al. | 1999
- 1049
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TOPIC E: RELIABILITY OF COMPOUND SEMICONDUCTORS - Evaluation of P-HEMT MMIC technology PH25 for space applicationsHuguet, P. et al. | 1999
- 1049
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Evaluation of P-HEMT MMIC technology PH25 for space applicationsHuguet, P. / Auxemery, P. / Pataut, G. / Garat, F. et al. | 1999
- 1055
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TOPIC E: RELIABILITY OF COMPOUND SEMICONDUCTORS - Degradation of AlGaAs-GaAs power HFETs under on-state and off-state breakdown conditionsDieci, D. et al. | 1999
- 1055
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Degradation of AlGaAs/GaAs Power HFET's Under On-State and Off-State Breakdown ConditionsDieci, D. / Sozzi, G. / Menozzi, R. / Lanzieri, C. / Cetronio, A. / Canali, C. et al. | 1999
- 1061
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TOPIC E: RELIABILITY OF COMPOUND SEMICONDUCTORS - Effects of RF life-test on LF electrical parameters of GaAs power MESFETsSaysset-Malbert, N. et al. | 1999
- 1061
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Effects of RF life-test on LF electrical parameters of GaAs power MESFETsSaysset-Malbert, N. / Lambert, B. / Maneux, C. / Labat, N. / Touboul, A. / Danto, Y. / Vandamme, L.K.J. / Huguet, P. / Auxemery, P. / Garat, F. et al. | 1999
- 1067
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TOPIC E: RELIABILITY OF COMPOUND SEMICONDUCTORS - A simpler method for life-testing laser diodesVanzi, M. et al. | 1999
- 1067
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A simpler method for life-testing laser diodesVanzi, M. / Martines, G. / Bonfiglio, A. / Licheri, M. / D'Arco, R. / Salmini, G. / De Palo, R. et al. | 1999
- 1073
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Cathodoluminescence from hot electron stressed InP HEMTsCova, P. / Meneghesso, G. / Salviati, G. / Zanoni, E. et al. | 1999
- 1073
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TOPIC E: RELIABILITY OF COMPOUND SEMICONDUCTORS - Cathodoluminescence from hot electron stressed InP HEMTsCova, P. et al. | 1999
- 1079
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Impact of FEM Simulation on Reliability Improvement of PackagingWeide, K. et al. | 1999
- 1079
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TOPIC F: PACKAGING, ASSEMBLIES AND MICROSYSTEMS - Invited Paper - Impact of FEM simulation on reliability improvement of packagingWeide, K. et al. | 1999
- 1089
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1/f Noise in conductive adhesive bonds under mechanical stress as a sensitive and fast diagnostic tool for reliability assessmentVandamme, L.K.J. / Perichaud, M.G. / Noguera, E. / Danto, Y. / Behner, U. et al. | 1999
- 1089
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TOPIC F: PACKAGING, ASSEMBLIES AND MICROSYSTEMS - 1-f noise in conductive adhesive bonds under mechanical stress as a sensitive and fast diagnostic tool for reliability assessmentVandamme, L.K.J. et al. | 1999
- 1095
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Localization of defects in die-attach assembly by Continuous Wavelet Transform using Scanning Acoustic MicroscopyBechou, L. / Angrisiani, L. / Ousten, Y. / Dallet, D. / Levi, H. / Daponte, P. / Danto, Y. et al. | 1999
- 1095
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TOPIC F: PACKAGING, ASSEMBLIES AND MICROSYSTEMS - Localization of defects in die-attach assembly by continuous wavelet transform using scanning acoustic microscopyBechou, L. et al. | 1999
- 1103
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Quality and mechanical reliability assessment of wafer-bonded micromechanical componentsPetzold, M. / Bagdahn, J. / Katzer, D. et al. | 1999
- 1103
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TOPIC F: PACKAGING, ASSEMBLIES AND MICROSYSTEMS - Quality and mechanical reliability assessment of wafer-bonded micromechanical componentsPetzold, M. et al. | 1999
- 1109
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Contact Resistance Anomalies of Vias before Breakdown in Accelerated Current Life TestsGolz, W.L.F. et al. | 1999
- 1109
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TOPIC F: PACKAGING, ASSEMBLIES AND MICROSYSTEMS - Contact resistance anomalies of vias before breakdown in accelerated current life testsGölz, W.L.F. et al. | 1999
- 1113
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Physical Limits and Lifetime Limitations of Semiconductor Devices at High TemperaturesWondrak, W. et al. | 1999
- 1113
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TOPIC G: POWER DEVICES - Invited Paper - Physical limits and lifetime limitations of semiconductor devices at high temperaturesWondrak, W. et al. | 1999
- 1121
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Device reliability and robust power converter developmentKeskar, N. / Trivedi, M. / Shenai, K. et al. | 1999
- 1121
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TOPIC G: POWER DEVICES - Invited Paper - Device reliability and robust power converter developmentKeskar, N. et al. | 1999
- 1131
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Lifetime Extrapolation for IGBT Modules under Realistic Operation ConditionsCiappa, M. / Malberti, P. / Fichtner, W. / Cova, P. / Cattani, L. / Fantini, F. et al. | 1999
- 1131
-
TOPIC G: POWER DEVICES - Lifetime extrapolation for IGBT modules under realistic operation conditionsCiappa, M. et al. | 1999
- 1137
-
Long term Reliability Testing of HV-IGBT modules in worst case traction operationFratelli, L. / Cascone, B. / Giannini, G. / Busatto, G. et al. | 1999
- 1137
-
TOPIC G: POWER DEVICES - Long term reliability testing of HV-IGBT modules in worst case traction operationFratelli, L. et al. | 1999
- 1143
-
Damage analysis in smart-power technology electrostatic discharge (ESD) protection devicesPogany, D. / Seliger, N. / Litzenberger, M. / Gossner, H. / Stecher, M. / Muller-Lynch, T. / Werner, W. / Gornik, E. et al. | 1999
- 1143
-
TOPIC G: POWER DEVICES - Damage analysis in smart-power technology electrostatic discharge (ESD) protection devicesPogany, D. et al. | 1999
- 1149
-
TOPIC G: POWER DEVICES - Thermal characterization of power devices by scanning thermal microscopy techniquesFiege, G.B.M. et al. | 1999
- 1149
-
Thermal Characterization of Power Devices by Scanning Thermal Microscopy TechniquesFiege, G.B.M. / Niedernostheide, F.-J. / Schulze, H.-J. / Barthelmesz, R. / Balk, L.J. et al. | 1999
- 1153
-
TOPIC G: POWER DEVICES - Reliability and lifetime evaluation of different wire bonding technologies for high power IGBT modulesHamidi, A. et al. | 1999
- 1153
-
Reliability and lifetime evaluation of different wire bonding technologies for high power IGBT modulesHamidi, A. / Beck, N. / Thomas, K. / Herr, E. et al. | 1999
- 1159
-
Reliability of AIN substrates and their solder joints in IGBT power modulesMitic, G. / Beinert, R. / Klofac, P. / Schultz, H.J. / Lefranc, G. et al. | 1999
- 1159
-
TOPIC G: POWER DEVICES - Reliability of AIN substrates and their solder joints in IGBT power modulesMitic, G. et al. | 1999
- 1165
-
TOPIC G: POWER DEVICES - Power cycling on press-pack IGBTs: Measurements and thermomechanical simulationCova, P. et al. | 1999
- 1165
-
Power cycling on press-pack IGBTs: measurements and thermomechanical simulationCova, P. / Nicoletto, G. / Pirondi, A. / Portesine, M. / Pasqualetti, M. et al. | 1999
-
EditorialLabat, N. et al. | 1999
-
Author Index I| 1999