The LPCVD of rutile at low temperatures (French)
- New search for: Hitchman, M.L.
- New search for: Hitchman, M.L.
- New search for: Zhao, J.
In:
Journal de physique / 4
;
9
, 8
; Pr357
;
1999
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ISSN:
- Article (Journal) / Print
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Title:The LPCVD of rutile at low temperatures
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Contributors:Hitchman, M.L. ( author ) / Zhao, J.
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Published in:Journal de physique / 4 ; 9, 8 ; Pr357
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Publisher:
- New search for: EDP Sciences
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Place of publication:Les Ulis
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Publication date:1999
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ISSN:
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ZDBID:
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Type of media:Article (Journal)
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Type of material:Print
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Language:French
- New search for: 31.00 / 33.00
- Further information on Basic classification
- New search for: 250/3400
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Keywords:
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Classification:
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Source:
Table of contents – Volume 9, Issue 8
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 553
-
MOCVD - MOCVD of electroceramic oxides: A precursor manufacturer's perspectiveJones, A.C. et al. | 1999
- 561
-
MOCVD - Single source MOCVD of superconducting films onto moved substratesStadel, O. et al. | 1999
- 569
-
MOCVD - Deposition of Ta2O5 and (TiO2)-(Ta2O5) films from Ta(OEt)4(DMAE) and Ti(OEt)2(DMAE)2, by IMOCVDJiménez, C. et al. | 1999
- 575
-
MOCVD - MOCVD of ferroelectric thin filmsSchmidt, C. et al. | 1999
- 583
-
MOCVD - Er, Yb, and Er, Yb (CO-)doped yttria thin films, deposited by an aerosol assisted MO-CVD processMeffre, W. et al. | 1999
- 589
-
MOCVD - OMVPE of GaN using (N3)2Ga((CH2)3N(CH3)2) (BAZIGA) in a cold wall reactorDevi, A. et al. | 1999
- 597
-
MOCVD - MOCVD of Ni and Ni3C films from Ni(dmen)2(tfa)2Brissonneau, L. et al. | 1999
- 605
-
MOCVD - Optimisation of the MOCVD of Ti(C, N) in a pulsed H2 - N2 plasma by gas-phase analysisDriessen', J.P.A.M. et al. | 1999
- 613
-
MOCVD - Synthesis of pyrite (FeS2) thin films by low pressure metal-organic chemical vapor depositionMeester, B. et al. | 1999
- 621
-
MOCVD - Phase relations in thin epitaxial films of complex oxides prepared by MOCVDSamoylenkov, S.V. et al. | 1999
- 629
-
MOCVD - Epitaxial ferroelectric capacitors obtained by MOCVDNovozhilov, M.A. et al. | 1999
- 637
-
MOCVD - Low-temperature MOCVD of molybdenum sulfide on silicon and 10OCr6 steel substratesSenocq, F. et al. | 1999
- 643
-
MOCVD - MOCVD and properties of in situ doped Pt-SnO2 thin filmsAmjoud, M. et al. | 1999
- 651
-
MOCVD - Chemical vapor deposition of tin oxide from SnEt4Bertrand, N. et al. | 1999
- 659
-
MOCVD - Chemical composition effects in the thin films of the colossal magnetoresistive perovskite manganates grown by MOCVDGorbenko, O.Yu et al. | 1999
- 667
-
MOCVD - MOCVD of SnO2 thin films from a new organometallic precursorBarreca, D. et al. | 1999
- 675
-
MOCVD - Gas-phase FT-IR analysis and growth kinetics of Al2O3 in a LP-MOCVD reactor using new dialkylacetylacetonate precursorsBattiston, G.A. et al. | 1999
- 683
-
MOCVD - YSZ-CeO2-YBCO heterostructures grown in-situ by pulsed injection CVDAbrutis, A. et al. | 1999
- 689
-
MOCVD - Growth of oxide buffer layers and YBCO films on various substrates by pulsed injection CVDAbrutis, A. et al. | 1999
- 699
-
Assisted Methods - CVD induced by ion beams for the preparation of oxide and nitride thin filmsGonzález-Elipe, A.R. et al. | 1999
- 709
-
Assisted Methods - Volatile surfactant assisted MOCVD of oxide materialsMolodyk, A.A. et al. | 1999
- 717
-
Assisted Methods - Plasma-enhanced chemical vapour deposition and structural characterization of amorphous chalcogenide filmsNagels, P. et al. | 1999
- 725
-
Assisted Methods - Carbon nitride films prepared by inductively coupled plasma chemical vapour deposition from a solid carbon sourcePopov, C. et al. | 1999
- 733
-
Assisted Methods - Deposition of nanoscale rhodium dots by STM assisted CVDMarchi, F. et al. | 1999
- 741
-
Assisted Methods - Modeling of aerosol-assisted chemical vapor co-deposition of NiO and carbon nanotubesNarducci, D. et al. | 1999
- 749
-
Assisted Methods - SnO2 thin films prepared by ion beam induced CVD. Preparation and characterizationJiménez, V.M. et al. | 1999
- 757
-
Assisted Methods - Synthesis of polycrystalline silicon films on metalized ceramic substrates with laser-assisted chemical vapor depositionKorevaar, G. et al. | 1999
- 763
-
Assisted Methods - In situ mass spetrometry during laser-induced chemical vapor deposition of silicon carbonitrideKorevaar, G. et al. | 1999
- 769
-
Assisted Methods - RPECVD thin silicon carbonitride films using hexamethyldisilazaneFainer, N.I. et al. | 1999
- 777
-
Assisted Methods - RPECVD thin cadmium, copper and zinc sulphide filmsRumyantsev, Yu M. et al. | 1999
- 785
-
Assisted Methods - Kinetics of laser-assisted single crystal growth of tungsten rodsLarsson, K. et al. | 1999
- 791
-
Assisted Methods - Photo-MOCVD of Cu thin films using Cu(hfa)(MHY) as precursorVidal, S. et al. | 1999
- 799
-
Assisted Methods - Remote plasma metalorganic chemical vapor deposition of GaN epilayersLosurdo, M. et al. | 1999
- 805
-
Assisted Methods - Study of sensing complex thin films prepared by PECVD method to H2SDai, G. et al. | 1999
- 811
-
Assisted Methods - Deposition of metastable Ti(1-x)AlxN folms by plasma-enhanced CVDPrange, R. et al. | 1999
- 819
-
Assisted Methods - RMPECVD of silica films in large scale microwave plasma reactor: Films propertiesNaudin, F. et al. | 1999
- 827
-
Assisted Methods - Deposition of tungsten by plasma enhanced chemical vapour depositionBain, M.F. et al. | 1999
- 837
-
CVD Technology - ALD precursor chemistry: Evolution and future challengesLaskelä, M. et al. | 1999
- 853
-
CVD Technology - Chemical vapor deposition of zinc gallate using a novel single precursorKim, C.G. et al. | 1999
- 861
-
CVD Technology - Synthesis and characterisation of b-ketoesterate complexes of yttrium, barium and copper(II): New precursors for liquid injection MOCVDGuillon, H. et al. | 1999
- 869
-
CVD Technology - Precision mass flow metering for CVD applicationsBoer, H.J. et al. | 1999
- 877
-
CVD Technology - Unveiling the magic of H2S on the CVD-Al2O3 coatingOshika, T. et al. | 1999
- 885
-
CVD Technology - Boron doped polysilicon deposition in a sector reactor: Specific phenomena and propertiesScheid, E. et al. | 1999
- 893
-
CVD Technology - Initial stages of growth of LPCVD polysilicon films. Effects of the surface "ageing"Davazoglou, D. et al. | 1999
- 901
-
CVD Technology - New flash-evaporation feeder for chemical vapor depositionChuprakov, I.S. et al. | 1999
- 909
-
CVD Technology - Properties of multicomponent layers produced on high speed steel by combined nitriding and PACVD methods under glow discharge conditionsSobiecki, J.R. et al. | 1999
- 915
-
CVD Technology - LPCVD boron carbonitride films from triethylamine boraneKosinova, M.L. et al. | 1999
- 923
-
CVD Technology - Silver pivalate as a new volatile precursor for thin film depositionKuzmina, N. et al. | 1999
- 929
-
CVD Technology - New volatile heterocyclic metal diketonates for MOCVDDrozdov, A. et al. | 1999
- 935
-
CVD Technology - Comparison of tantalum precursors for use in liquid injection CVD of thin film oxides, dielectrics and ferroelectricsCrosbie, M.J. et al. | 1999
- 943
-
CVD Technology - Heterobimetallic single-source precursors for MOCVD, Synthesis and characterization of volatile mixed ligand complexes of lanthanides, barium and magnesium b-diketonates with d-element containing ligandsGleizes, A.N. et al. | 1999
- 953
-
CVD Technology - Niobium and tantalum derivatives with bidentate nitrogen ligands as potential precursors to nitridesHubert-Pfalzgraf, L.G. et al. | 1999
- 961
-
Process Control and Industrial Applications - In situ real time ellipsometry for GaN remote plasma MOCVD technologyBruno, G. et al. | 1999
- 977
-
Process Control and Industrial Applications - Continuous CVD processing of multi-filament fibre coatings for the manufacture of ceramic matrix compositesDias, A.G. et al. | 1999
- 987
-
Process Control and Industrial Applications - AlNi coatings on the internal surfaces of tubesLabatut, C. et al. | 1999
- 995
-
Process Control and Industrial Applications - FTIR based process control for industrial reactorsHopfe, V. et al. | 1999
- 1003
-
Process Control and Industrial Applications - Development of an in-situ thickness measurement technique for film growth by APCVDRivero, J.M. et al. | 1999
- 1013
-
Process Control and Industrial Applications - In-situ process monitoring of MOCVD of superconducting and dielectric oxide thin filmsYamamoto, S. et al. | 1999
- 1021
-
Process Control and Industrial Applications - In situ characterization of atomic layer deposition processes by a mass spectrometerRitala, M. et al. | 1999
- 1029
-
Process Control and Industrial Applications - Diamond nuclei formation in a microwave plasma assisted chemical vapor deposition (MWCVD) systemGarcia, M.M. et al. | 1999
- 1035
-
Process Control and Industrial Applications - GaIn-GaN heterostructures grown in production scale MOVPE reactorsSchoen, O. et al. | 1999
- 1041
-
Process Control and Industrial Applications - In-situ-spectroscopic monitoring for SIC-CVD process controlBrennfleck, K. et al. | 1999
- 1049
-
Process Control and Industrial Applications - CVD-produced ZrCO2-fiber coatings for mullite-mullite compositesNubian, K. et al. | 1999
- 1059
-
Characterization - XPS and XPS valence band characterizations of amorphous or polymeric silicon based thin films prepared by PACVD from organosilicon monomersBerjoan, R. et al. | 1999
- 1069
-
Characterization - Nucleation behavior during the first stages of SiC growth on different substratesHurtos, E. et al. | 1999
- 1075
-
Characterization - Optical properties of ultra-thin low pressure chemically vapor deposited silicon filmsDavazoglou, D. et al. | 1999
- 1083
-
Characterization - Phase and surface roughness evolution for as-deposited LPCVD silicon filmsCobianu, C. et al. | 1999
- 1091
-
Characterization - Structure of mixed-phase LPCVD silicon films as a function of operating conditionsMauduit, B.de et al. | 1999
- 1099
-
Characterization - Composition and magnetic properties of MOCVD processed thin films from nickeloceneCaro, D.de et al. | 1999
- 1107
-
Characterization - Correlations between stress and microstructure into LPCVD silicon filmsTemple-Boyer, P. et al. | 1999
- 1115
-
Characterization - LPCVD amorphous silicon carbide films, properties and microelectronics applicationsKleps, I. et al. | 1999
- 1123
-
Characterization - CVD of mono and double-layers on Si-B-N-C fibresNestler, K. et al. | 1999
- 1131
-
Characterization - Chemical and structural analysis of crystalline carbon nitride thin films prepared by electron cyclotron resonance plasma sputtering processTani, Y. et al. | 1999
- 1139
-
Characterization - XPS study of CVD silicon thin films deposited on various substrates from SiH4 gaseous precursorBerjoan, R. et al. | 1999
- 1147
-
Characterization - Hybrid plasma polymerized membranes from organosilicon precursors for gas separationRouaides, S. et al. | 1999
- 1155
-
Characterization - A new In0.5Ga0.5P-GaAs double heterojunction bipolar transistor (DHBT) prepared by MOCVDLiu, W.C. et al. | 1999
- 1163
-
Characterization - MOCVD grown d-doped InGaP-GaAs heterojunction bipolar transistorLiu, W.C. et al. | 1999
- 1171
-
Characterization - High breakdown n+-GaAs-d(p+)-GaInP-n-GaAs heterojunction camel-gate FET grown by LP-MOCVDLiu, W.C. et al. | 1999
- 1179
-
Characterization - Application of Rainan spectrometry for the characterization of complex oxide thin films Pr8-1035 grown by MOCVDGiittler, B. et al. | 1999
- 1187
-
Characterization - Mechanical reinforcement of carbon foam by hafnium carbide depositSourdiaucourt, P. et al. | 1999
- 1195
-
Characterization - Characterisation of complex multilayer structures using spectroscopic ellipsometryAlonso, M.I. et al. | 1999
- 1203
-
Index| 1999
-
LPCVD vertical furnace optimization for undoped polysilicon film depositionRinaldi, A.M. et al. | 1999
-
Kinetics of film growth in CVD reactionsRaic, K.T. et al. | 1999
-
In situ monitoring of atmospheric pressure tin oxide CVD using near-infrared diode laser spectroscopyHoldsworth, R.J. et al. | 1999
-
Amorphous SiGe deposition by LPCVD from Si2H6 and GeH4 precursorsOlivares, J. et al. | 1999
-
Laser CVD of silicon nanoclusters and in-situ process characterizationGoossens, A. et al. | 1999
-
A PE-MOCVD route to V2O5 nanostructured thin filmsBarreca, D. et al. | 1999
-
In-situ Raman spectroscopy and laser-induced fluorescence during laser chemical vapor precipitation of silicon nanoparticlesBesling, W.F.A. et al. | 1999
-
Chemistry and kinetics of chemical vapor deposition of pyrolytic carbon from methaneBecker, A. et al. | 1999
-
Study of the growth mechanism of CVD silicon films on silica by X-ray reflectivity, atomic force microscopy and scanning electron microscopyLee, A.van der et al. | 1999
-
Preparation and properties of cosmo-mimetic carbon micro-coils and ceramic micro-solenoids-micro-tubes by CVD processMotojima, S. et al. | 1999
-
Deposition and characterization of CVD - MoO3 thin filmsGesheva, K.A. et al. | 1999
-
Routes of metal oxide formation from metal b-diketonates used as CVD precursorsTurgambaeva, A.E. et al. | 1999
-
Deposition kinetics of Al2O3 from AlCl3-CO2-H2-HC1 gas mixtures by thermal CVD in a hot-wall reactorSchierling, M. et al. | 1999
-
CVD of metal chalcogenide filmsChuprakov, I.S. et al. | 1999
-
Kinetic mechanism of the decomposition of dimethyltin dichlorideMol, A.M.B.van et al. | 1999
-
H-termination effects on initial growth characteristics of W on Si using WF6 and SiH4 gasesYamamoto, Y. et al. | 1999
-
Thermodynamical and experimental conditions of hafnium carbide chemical vapour depositionSourdiaucourt, P. et al. | 1999
-
Hafnium carbide as a barrier in multilayer coatings by chemical vapor deposition (CVD)Wunder, V.K. et al. | 1999
-
Preparation of iron carbide and iron nanoparticles by laser-induced gas phase pyrolysisAlexandrescu, R. et al. | 1999
-
Epitaxial growth of TiO2 (rutile) thin films by halide CVDSchuisky, M. et al. | 1999
-
Prediction of LPCVD silicon film microstructure from local operating conditions using numerical modelingDollet, A. et al. | 1999
-
Chemical mechanisms of tungsten CVDLakhotkin, Yu V. et al. | 1999
-
Modelling of nanosecond LCVD of 3D metal micropatternsReznikova, E.F. et al. | 1999
-
Atmospheric pressure chemical vapour deposition of tin sulfide thin filmsParkin, I.P. et al. | 1999
-
Some recent developments in chemical vapor deposition proress and equipment modelingKleijn, C.R. et al. | 1999
-
Theoretical analysis of a mass conservation equation for a surface reaction between two parallel plates of a chemical vapor deposition reactorMise, N. et al. | 1999
-
In-situ monitoring of atmospheric pressure tin oxide CVD using coherent anti-Stokes Raman scatteringDavis, M.J. et al. | 1999
-
Modeling of mass-transportation of tris-(acctylacetonato)chromium(III) at atmospheric pressureFedotova, N.E. et al. | 1999
-
Study of the growth mechanisms of low-pressure chemically vapour deposited silica filmsOjeda, F. et al. | 1999
-
Frontier trends in the prediction of vapour pressure of metal-organic precursorsIgumenov, I.K. et al. | 1999
-
MOCVD of superconducting oxides, heterostructures and superlatticesWeiss, F. et al. | 1999
-
Microstructure and deposition Characteristics of k-Al2O3Ruppi, S. et al. | 1999
-
Plasma polymer thin films obtained by plasma polymerization of pyrroleBorros, S. et al. | 1999
-
Site-specific chemistry of gallium arsenide metalorganic chemical vapor depositionFu, Q. et al. | 1999
-
Growth of high crystalline quality thin epitaxial CeO2 films on (1102) sapphireFröhlich, K. et al. | 1999
-
A statistical thermodynamic approach to model plasma reactorsCavallotti, C. et al. | 1999
-
Modelling of SiC sublimation growth process: Influence of experimental parameters on crystal shapePisch, A. et al. | 1999
-
The role of the substrate surface area-reactor volume ratio in chemistry and kinetics of chemical vapor depositionTeubner, M. et al. | 1999
-
Atomic layer doping of SiGeTillack, B. et al. | 1999
-
Low-pressure chemical vapour deposition of mullite coatings in a cold-wall reactorArmas, B. et al. | 1999
-
Synthesis and characterization of CN thin films by IR laser deposition in a flow reactorCrunteanu, A. et al. | 1999
-
Investigations on TiN, TiC and TI(CN) obtained by chemical vapor deposition EmigPopovska, N. et al. | 1999
-
The LPCVD of rutile at low temperaturesHitchman, M.L. et al. | 1999
-
MOCVD of ferroelectric BaMgF4 thin filmsRyazanov, M. et al. | 1999
-
Low pressure chemical vapour deposition of CNx. layers by interaction between tetramethylguanidine and cyanurchlorideZambov, L. et al. | 1999
-
Heats of formation and bond energies in group III compoundsAllendorf, M.D. et al. | 1999
-
Contribution to the modeling of CVD silicon carbide growthRaffy, C. et al. | 1999
-
Study of the precursor injection in a remote microwave PECVD reactorFoucher, L. et al. | 1999
-
Phase controlled low-pressure chemical vapor deposition of iron(di)sulfideMeester, B. et al. | 1999
-
Microstructure and properties of nanocomposite diamond films obtained by a new CVD-based techniqueTerranova, M.L. et al. | 1999
-
CVD of ZrO2 using 7rI4 as metal precursorForsgren, K. et al. | 1999
-
Modeling of silicon epitaxial growth with SiHCl3 in a CVD barrel reactor at atmospheric pressurePaola, E.de et al. | 1999
-
Growth mechanisms of MOCVD processed Ni thin filmsBrissonneau, L. et al. | 1999
-
CVD niobium in Nb-Hal-(H)-inert gas systems: A thermodynamic and experimental approachesGolubenko, A.N. et al. | 1999
-
Atmospheric pressure chemical vapour deposition of chromium oxide filmsParkin, I.P. et al. | 1999
-
A density functional theory study of surface and gas phase processes occurring during the MOCVD of ZnSCavallotti, C. et al. | 1999
-
In-situ mass spectrometric study of the reaction mechanism in MOCVD of Pyrite (FeS2)Reijnen, L. et al. | 1999
-
2D and 1D modeling of AMT barrel reactors for silicon depositionMasi, M. et al. | 1999
-
Structured YBa2CU3O7-8 thin films grown on aligned calcium stabilized zirconia-calcium zirconate lamellar eutectic substratesSantiso, J. et al. | 1999
-
Injection MOCVD of BaTiO3-SrTiO3 artificial superlatticesLindner, J. et al. | 1999
-
Modeling of SiOz deposition from mixtures of tetraethoxysilane and ozone in an APCVD industrial reactorNieto, J.-P. et al. | 1999
-
Process stability of SiGe heterostructures for BICMOS applicationsRibot, P. et al. | 1999
-
Chemical vapor deposition of semi-insulating polycrystalline silicon (SIPOS): Experience and simulationBarathie, P. et al. | 1999
-
Preservation of copper against atmospheric corrosion with a film obtained by plasma polymerization of methaneBorros, S. et al. | 1999
-
Atomic layer deposited thin films for corrosion protectionAromaa, J. et al. | 1999
-
The role of the pore surface area-pore volume ratio in chemical vapor infiltrationBenzinger, W. et al. | 1999
-
Deposition of ternary silicon based compounds by CVD techniquesMarti, F.J. et al. | 1999
-
Layer-by-layer growth of silicon nitride films by NH3 and SiH4Watanabe, T. et al. | 1999