Diffusion of gold in relaxed Si-Ge epi-layers (English)
- New search for: Fischer, R.
- New search for: Fischer, R.
- New search for: Frank, W.F.J.
- New search for: Lyutovich, K.
In:
Physica / B
;
273
; 598-602
;
1999
-
ISSN:
- Article (Journal) / Print
-
Title:Diffusion of gold in relaxed Si-Ge epi-layers
-
Contributors:
-
Published in:Physica / B ; 273 ; 598-602
-
Publisher:
- New search for: North-Holland Physics Publ.
-
Place of publication:Amsterdam
-
Publication date:1999
-
ISSN:
-
ZDBID:
-
Type of media:Article (Journal)
-
Type of material:Print
-
Language:English
- New search for: 51.00 / 51.00 / 33.60 / 33.60
- Further information on Basic classification
- New search for: 535/3400
-
Keywords:
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Classification:
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Source:
Table of contents – Volume 273
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
-
To 40 years of defects in semiconductors: may the problem never be solved!Stavola, M. et al. | 1999
- 7
-
Self-interstitials in semiconductors: what we are learning from interstitial Zn in ZnSeWatkins, G.D. et al. | 1999
- 15
-
Current problems in diamond: towards a quantitative understandingDavies, G. et al. | 1999
- 24
-
The role of threading dislocations in the physical properties of GaN and its alloysSpeck, J.S. et al. | 1999
- 33
-
Observation of Ga vacancies and negative ions in undoped and Mg-doped GaN bulk crystalsSaarinen, K. et al. | 1999
- 39
-
Mechanism of radiative recombination in acceptor-doped bulk GaN crystalsGodlewski, M. et al. | 1999
- 43
-
Mg acceptors in GaN: Dependence of the g-anisotropy on the doping concentrationHofmann, D.M. et al. | 1999
- 46
-
Electrical characterization of Mg-related energy levels and the compensation mechanism in GaN:MgSeghier, D. et al. | 1999
- 50
-
Effect of Si doping on the strain and defect structure of GaN thin filmsRomano, L.T. et al. | 1999
- 54
-
Photo-enhanced dissociation of hydrogen-magnesium complexes in gallium nitrideKamiura, Y. et al. | 1999
- 58
-
Optically detected magnetic resonance of shallow donor - shallow acceptor and deep (2.8-3.2eV) recombination from Mg-doped GaNGlaser, E.R. et al. | 1999
- 63
-
The role of deep levels in the persistent photoconductivity in Mg-doped GaN grown by MOCVDSeghier, D. et al. | 1999
- 66
-
High-resolution PL spectra of donor- and acceptor-bound excitons in homoepitaxial GaN-layersKornitzer, K. et al. | 1999
- 70
-
Defect formation near GaN surfaces and interfacesBrillson, L.J. et al. | 1999
- 75
-
Selective excitation of the yellow luminescence of GaNColton, J.S. et al. | 1999
- 80
-
Transient photoluminescence of defects in undoped GaN prepared by metal organic vapor phase epitaxyKorotkov, R.Y. et al. | 1999
- 84
-
Defect introduction in epitaxially grown n-GAN during electron beam deposition of Ru schottky contactsAuret, F.D. et al. | 1999
- 88
-
Influence of generalized gradient approximations on theoretical hyperfine fields of paramagnetic defectsGerstmann, U. et al. | 1999
- 92
-
Metastable-like behaviour of a sputter deposition-induced electron trap in n-GaNAuret, F.D. et al. | 1999
- 96
-
Annealing of ion-implanted GaNBurchard, A. et al. | 1999
- 101
-
Behavior of electrically active point defects in irradiated MOCVD n-GaNEmtsev, V.V. et al. | 1999
- 105
-
Deep acceptors in undoped GaNReshchikov, M.A. et al. | 1999
- 109
-
Correlation of vibrational modes and DX-like centers in GaN:OWetzel, C. et al. | 1999
- 113
-
Effects of oxygen incorporation in p-type AlN crystals doped with carbon speciesYamamoto, T. et al. | 1999
- 116
-
Negatively charged muonium states in gallium nitrideLichti, R.L. et al. | 1999
- 120
-
ODMR of bound excitons in Mg-doped GaNBayerl, M.W. et al. | 1999
- 124
-
Ordering in bulk GaN:Mg samples: defects caused by Mg dopingLiliental-Weber, Z. et al. | 1999
- 130
-
Structure of the {1120} inversion domain boundary in GaNNorthrup, J.E. et al. | 1999
- 134
-
Electronically induced dislocation glide motion in hexagonal GaN single crystalsMaeda, K. et al. | 1999
- 140
-
Role of the defect microstructure on the electrical transport properties in undoped and Si-doped GaN grown by LP-MOVPEFarvacque, J.-L. et al. | 1999
- 144
-
Identification of Ag and Cd photoluminescence in 111Ag-doped GaNStötzler, A. et al. | 1999
- 148
-
Cathodoluminescence intensity and dislocation contrast evolutions under electron beam excitation in epitaxial GaN laterally overgrown on (0001) sapphireDassonneville, S. et al. | 1999
- 152
-
Spectroscopic studies of H-decorated interstitials and vacancies in thin-film silicon exfoliationChabal, Y.J. et al. | 1999
- 164
-
The dipole moments of H2, HD and D2 molecules and their concentrations in siliconNewman, R.C. et al. | 1999
- 167
-
Deep levels of vacancy-hydrogen centers in silicon studied by Laplace DLTSBonde Nielsen, K. et al. | 1999
- 171
-
Hydrogen-induced extended complexes in siliconGorelkinskii, Y.V. et al. | 1999
- 176
-
Optically active hydrogen dimers in siliconHourahine, B. et al. | 1999
- 180
-
The A center binding a single hydrogen atom in crystalline silicon observed by EPRJohannesen, P. et al. | 1999
- 184
-
Effects of charge state on stress-induced alignment and relaxation of a hydrogen-carbon complex in siliconFukuda, K. et al. | 1999
- 188
-
A new type of hydrogen molecules in siliconMurakami, K. et al. | 1999
- 192
-
Temperature dependence of the formation of hydrogen molecules in n- and p-type siliconKitajima, M. et al. | 1999
- 196
-
Vibration of hydrogen molecules in semiconductors: anharmonicity and electron correlationSaito, M. et al. | 1999
- 200
-
Microscopic properties of H2 in Si from the dependence of the 3618.4cm-1 line on temperature and stressAnna Zhou, J. et al. | 1999
- 204
-
Hydrogen interactions with interstitial- and vacancy-type defects in siliconTokmoldin, S.Z. et al. | 1999
- 208
-
Vacancy-hydrogen complexes in group-IV semiconductorsBudde, M. et al. | 1999
- 212
-
Nucleation mechanism of hydrogen-induced platelets in single crystal and polycrystalline siliconNickel, N.H. et al. | 1999
- 216
-
Hydrogen interactions with intrinsic defects in siliconHastings, J.L. et al. | 1999
- 220
-
Optical absorption study of Zn-H complexes in SiMori, R. et al. | 1999
- 224
-
Thermal properties of H-related complexes in electron-irradiated Si doped with HSuezawa, M. et al. | 1999
- 228
-
Hydrogenation and passivation of electron-beam-induced defects in N-type SiOhmura, Y. et al. | 1999
- 231
-
Stability and vibrational modes of H2 and H2* complexes in SiKim, Y.-S. et al. | 1999
- 235
-
Hydrogen interaction with defects in electron-irradiated siliconFeklisova, O. et al. | 1999
- 239
-
Atomic and electronic structure of hydrogen-passivated double selenium donors in siliconHuy, P.T. et al. | 1999
- 243
-
Hydrogen reactions with electron irradiation damage in siliconPeaker, A.R. et al. | 1999
- 247
-
Optical absorption due to H-point defect complexes in quenched Si doped with CFukata, N. et al. | 1999
- 251
-
Breaking through the electrical saturation barrier: 2D- versus 3D-doping in n-type siliconCitrin, P.H. et al. | 1999
- 256
-
Infrared absorption study of a new dicarbon center in siliconLavrov, E.V. et al. | 1999
- 260
-
A unified microscopic mechanism for donor deactivation in SiBaierle, R. et al. | 1999
- 264
-
EPR proof of the negatively charged acceptor state Zn- in siliconGehlhoff, W. et al. | 1999
- 268
-
Theoretical studies of interstitial boron defects in siliconHakala, M. et al. | 1999
- 271
-
Defects incorporating Ge atoms in irradiated Si:GeSobolev, N.A. et al. | 1999
- 275
-
Local vibrational modes of a dicarbon-hydrogen center in crystalline siliconHoffmann, L. et al. | 1999
- 279
-
Identification of cadmium-related centers in siliconNäser, A. et al. | 1999
- 283
-
Annealing kinetics of the di-carbon radiation-damage centre in edge-defined film-fed growth siliconPark, S.-C. et al. | 1999
- 287
-
Electron irradiation of heavily doped silicon: group-III impurity ion pairsEmtsev, V.V. et al. | 1999
- 291
-
Vibrational absorption from vacancy-oxygen-related complexes (VO, V2O, VO2) in irradiated siliconLindström, J.L. et al. | 1999
- 296
-
Assignment of EPR spectrum for bistable thermal donors in siliconMakarenko, L.F. et al. | 1999
- 300
-
Local vibrational mode bands of V-O-H complexes in siliconMarkevich, V.P. et al. | 1999
- 305
-
Oxygen and peculiarities of its precipitation in Si1-xGexKhirunenko, L.I. et al. | 1999
- 308
-
Oxygen precipitation in nitrogen-doped Czochralski siliconYang, D. et al. | 1999
- 312
-
An infrared investigation of the 887 cm-1 band in Cz-SiFytros, L.G. et al. | 1999
- 317
-
Oxygen in silicon doped with isovalent impuritiesKhirunenko, L.I. et al. | 1999
- 322
-
The temperature dependence of radiative and nonradiative processes at Er-O centers in SiChen, T.D. et al. | 1999
- 326
-
Spectroscopic probing of defect-related energy storage in silicon doped with erbiumThao, D.T.X. et al. | 1999
- 330
-
On the generation of optically active Er centers in Si light emitting diodesJantsch, W. et al. | 1999
- 334
-
Effective Auger excitation of erbium luminescence by hot electrons in siliconBresler, M.S. et al. | 1999
- 338
-
The photoluminescence mechanism of erbium in silicon: intensity dependence on excitation power and temperatureThao, D.T.X. et al. | 1999
- 342
-
Er-O clustering and its influence on the lattice sites of Er in SiWahl, U. et al. | 1999
- 346
-
Impurity effects in silicon implanted with rare-earth ionsEmtsev, V.V. et al. | 1999
- 350
-
Structure of Er-related centers in SiCarey, J.D. et al. | 1999
- 354
-
Mechanism of excitation of erbium electroluminescence in amorphous siliconBresler, M.S. et al. | 1999
- 358
-
Transition metal defect behavior and Si density of states in the processing temperature regimeSmith, A.L. et al. | 1999
- 363
-
The electronic configuration of substitutional Fe in siliconWeyer, G. et al. | 1999
- 367
-
Lattice location of implanted Cu in SiWahl, U. et al. | 1999
- 371
-
Metal impurity precipitates in silicon: chemical state and stabilityMchugo, S.A. et al. | 1999
- 375
-
Evidence for deep recombination centers in high-purity silicon from photoluminescence measurements at elevated temperaturesAlex, V. et al. | 1999
- 379
-
Lithium-gold-related complexes in p-type crystalline siliconGudmundsson, J.T. et al. | 1999
- 383
-
Lattice defects in silicon rapidly solidified from the meltNishizawa, H. et al. | 1999
- 387
-
Copper-hydrogen complexes in siliconKnack, S. et al. | 1999
- 391
-
Dissociative diffusion of nickel in silicon, and sinks and sources of vacancy annihilation and generation in the crystal bulkKitagawa, H. et al. | 1999
- 395
-
Drift of interstitial iron in a space charge region of p-type Si Schottky diodeKoveshnikov, S. et al. | 1999
- 398
-
Impact of vacancies and self-interstitials on the formation of substitutional transition metal defects in float-zone silicon crystalsLemke, H. et al. | 1999
- 404
-
Dependence of electrically detected magnetic resonance signal shape from iron-contaminated silicon wafers on the thermal treatment of the samplesMchedlidze, T. et al. | 1999
- 408
-
Out-diffusion profiles of supersaturated substitutional gold in siliconMorooka, M. et al. | 1999
- 412
-
What do we know about iron in silicon after 45yr of researchIstratov, A.A. et al. | 1999
- 416
-
Iron-related defect model in n-type silicon based on the electrical and diffusion propertiesKitagawa, H. et al. | 1999
- 420
-
The 777meV photoluminescence band in Si:PtLeit~ao, J.P. et al. | 1999
- 424
-
Copper-related defects in siliconEstreicher, S.K. et al. | 1999
- 429
-
Depth profiles of palladium-hydrogen complexes in siliconWeber, J. et al. | 1999
- 433
-
Deep level anomalies in silicon doped with radioactive Au atomsBollmann, J. et al. | 1999
- 437
-
Formation of copper precipitates in siliconFlink, C. et al. | 1999
- 441
-
Experiments and computer simulations of iron profiles in p-p+ silicon: segregation and the position of the iron donor levelHieslmair, H. et al. | 1999
- 445
-
ESR study of Fe-H complexes in SiTakahashi, T. et al. | 1999
- 449
-
Pt and Li complexes in silicon. 99-07-22 16.52Kleverman, M. et al. | 1999
- 453
-
A combined experimental and theoretical approach to grain boundary structure and segregationPennycook, S.J. et al. | 1999
- 458
-
Native defects and their interactions in siliconColombo, L. et al. | 1999
- 463
-
The structure of vacancy-impurity complexes in highly n-type SiSaarinen, K. et al. | 1999
- 468
-
Defect states at silicon surfacesReddy, A.J. et al. | 1999
- 473
-
Effects of extended defects on the properties of intrinsic and extrinsic point defects in siliconJusto, J.F. et al. | 1999
- 476
-
Electron irradiation effects in Si observed at 4.2-25K by means of in situ transmission electron microscopyTakeda, S. et al. | 1999
- 480
-
Positron annihilation study of dopant effects on proton-irradiation defect in siliconHori, F. et al. | 1999
- 485
-
In-situ studies of point-defect complexes in silicon implanted with heavy MeV ionsYarykin, N. et al. | 1999
- 489
-
Impurity-assisted annealing of point defect complexes in ion- implanted siliconPellegrino, P. et al. | 1999
- 493
-
Concentration of point defects in growing CZ silicon crystal under the internal stresses: effects of impurity doping and thermal stressTanahashi, K. et al. | 1999
- 497
-
Annealing of the photoluminescence W-center in proton-irradiated siliconFeick, H. et al. | 1999
- 501
-
Magic number vacancy aggregates in Si and GaAs - structure and positron lifetime studiesStaab, T.E.M. et al. | 1999
- 505
-
Interstitial aggregates and a new model for the I1-W optical centre in siliconCoomer, B.J. et al. | 1999
- 509
-
Thermal equilibrium concentrations and diffusivities of intrinsic point defects in siliconOkino, T. et al. | 1999
- 512
-
Nonequilibrium experiments on self-diffusion in silicon at low temperatures using isotopically enriched structuresUral, A. et al. | 1999
- 516
-
Magic numbers of multivacancy in silicon and its hydrogen decorationAkiyama, T. et al. | 1999
- 520
-
The divacancy in silicon and diamondCoomer, B.J. et al. | 1999
- 524
-
Tin-vacancy complexes in e-irradiated n-type siliconFanciulli, M. et al. | 1999
- 528
-
Effect of high-temperature electron irradiation on the formation of radiative defects in siliconBuyanova, I.A. et al. | 1999
- 532
-
Molecular-dynamics studies of self-interstitial aggregates in SiGharaibeh, M. et al. | 1999
- 535
-
On the fluence dependence of radiation-induced carrier removal in moderately doped SiAmekura, H. et al. | 1999
- 540
-
Investigation of defect formation and electronic transport in microcrystalline silicon deposited by hot-wire CVDStöger, M. et al. | 1999
- 544
-
Electronic transport properties of polycrystalline silicon films deposited on ceramic substratesBourdais, S. et al. | 1999
- 549
-
Defect diagnostics using scanning photoluminescence in multicrystalline siliconTarasov, I. et al. | 1999
- 553
-
Effects of nitrogen on dislocations in silicon during heat treatmentLi, D. et al. | 1999
- 557
-
Infrared vibrational mode absorption from thermal donors in germaniumClauws, P. et al. | 1999
- 561
-
Low-temperature spreading-resistance profiling for the characterization of impurity distributions in germaniumVoss, S. et al. | 1999
- 565
-
Frenkel pairs, vacancies, and self-interstitials in Ge: identification and properties from PAC- and Moessbauer spectroscopySielemann, R. et al. | 1999
- 570
-
Local vibrational mode spectroscopy of thermal donors in germaniumMarkevich, V.P. et al. | 1999
- 575
-
Electronic and structural properties of vacancy and self-interstitial defects in germaniumJanotti, A. et al. | 1999
- 579
-
Investigation of ion-bombardment effects on the formation of voids during deposition of a-Ge:HPeng, Z.L. et al. | 1999
- 584
-
Deep defects in n-type high-purity germanium: quantification of optical variants of deep level transient spectroscopyBlondeel, A. et al. | 1999
- 589
-
Initial stages of Ge growth on Si(100): ad-atoms, ad-dimers, and ad-trimersDalpian, G.M. et al. | 1999
- 593
-
Atomic resolution EELS analysis of a misfit dislocation at a GeSi-Si interfaceBatson, P.E. et al. | 1999
- 598
-
Diffusion of gold in relaxed Si-Ge epi-layersFischer, R. et al. | 1999
- 603
-
Deep state defects in strained and relaxed epitaxial Si1-xGex on Si introduced by 3d transition metal and 5d noble metal impuritiesNauka, K. et al. | 1999
- 608
-
Images of local tilted regions in strain-relaxed SiGe layersMooney, P.M. et al. | 1999
- 612
-
Growth and dislocation behavior in GeSi bulk alloysYonenaga, I. et al. | 1999
- 616
-
Modelling of local modes in SixGe1-x and CxSiyGe1-x-y alloys to explore the local clustering of the speciesScarle, S. et al. | 1999
- 620
-
Site preference next to germanium atom of gold and platinum impurities in SiGe alloyDobaczewski, L. et al. | 1999
- 624
-
Jahn-Teller splitting and Zeeman effect of acceptors in diamondKim, H. et al. | 1999
- 628
-
Electron paramagnetic resonance (EPR) and optical absorption studies of defects created in diamond by electron irradiation damage at 100 and 350KTwitchen, D.J. et al. | 1999
- 632
-
Ab initio calculations of hyperfine interactions for vacancy and Ni point defects in diamondGerstmann, U. et al. | 1999
- 636
-
An orthorhombic nickel-nitrogen complex in high-pressure synthetic diamondNeves, A.J. et al. | 1999
- 640
-
Spin-orbit splitting of acceptor states in Si and CSerrano, J. et al. | 1999
- 644
-
The production and annealing stages of the self-interstitial (R2) defect in diamondTwitchen, D.J. et al. | 1999
- 647
-
Transition metals in diamond: experimental and theoretical identification of Co-N complexesJohnston, K. et al. | 1999
- 651
-
New paramagnetic defects in synthetic diamonds grown using nickel catalystNeves, A.J. et al. | 1999
- 655
-
Electron-paramagnetic-resonance studies of defects in electron-irradiated p-type 4H and 6H SiCSon, N.T. et al. | 1999
- 659
-
Effective mass donors in silicon carbide - a study with electron nuclear double resonanceGreulich-Weber, S. et al. | 1999
- 663
-
Zeeman spectroscopy of the neutral silicon vacancy in 6H and 4H SiCWagner, M. et al. | 1999
- 667
-
Electron paramagnetic resonance of the scandium acceptor in 4H and 6H silicon carbideSpaeth, J.-M. et al. | 1999
- 672
-
Low-dose ion implanted epitaxial 4H-SiC investigated by deep level transient spectroscopy| 1999
- 677
-
Zeeman spectroscopy of the D1 bound exciton in 3C-, and 4H-SiCEgilsson, T. et al. | 1999
- 681
-
Effect of grown-in biaxial strain on deep level defects in Si1-yCy-Si epitaxial heterostructuresSingh, D.V. et al. | 1999
- 685
-
Self-diffusion on the arsenic sublattice in GaAs investigated by the broadening of buried nitrogen doping layersStolwijk, N.A. et al. | 1999
- 689
-
Hydrogen passivation of AlxGa1-xAs-GaAs studied by surface photovoltage spectroscopyOlafsson, H.O. et al. | 1999
- 693
-
Deep-level defects near the surface of Be-doped GaAs grown by molecular beam epitaxyKrispin, P. et al. | 1999
- 697
-
Diffusivity of arsenic interstitials in GaAs studied by sulfur in-diffusionLeipner, H.S. et al. | 1999
- 701
-
Effect of lithium diffusion on the native defects in GaAs studied by positron annihilation spectroscopyArpiainen, S. et al. | 1999
- 705
-
Influence of stoichiometry and doping on vacancies in n-type GaAsGebauer, J. et al. | 1999
- 710
-
Defect investigations in plastically deformed gallium arsenideLeipner, H.S. et al. | 1999
- 714
-
Formation of vacancy clusters during copper diffusion in GaAsKrause-Rehberg, R. et al. | 1999
- 718
-
Deep levels in He++ irradiated Be-doped Al0.5Ga0.5As MBE layersSzatkowski, J. et al. | 1999
- 722
-
Native point defect analysis in non-stoichiometric GaAs: an annealing studyLutz, R.C. et al. | 1999
- 725
-
As antisite incorporation in epitaxial growth of GaAsBourgoin, J.C. et al. | 1999
- 729
-
Extrinsic and intrinsic defects at molecular-beam-epitaxy regrown GaAs interfacesKy, N.H. et al. | 1999
- 733
-
Femtosecond nonlinear optics of low-temperature grown semiconductorsSiegner, U. et al. | 1999
- 737
-
Tunnel ionization of deep impurities in semiconductors induced by terahertz electric fieldsGanichev, S.D. et al. | 1999
- 743
-
Hydrogen molecules in GaAs after hydrogen plasma treatmentLeitch, A.W.R. et al. | 1999
- 746
-
Photo-ionization spectra for alloy-induced configurations of Si-DX center in AlGaAsPiotrzkowski, R. et al. | 1999
- 750
-
Photoluminescence of highly compensated GaAs doped with high concentration of GeWatanabe, M. et al. | 1999
- 754
-
Reactions of column-III vacancies and interstitials during Zn diffusion-induced disordering of GaAs-AlGaAs multiple-quantum-well structuresKy, N.H. et al. | 1999
- 759
-
Ab initio calculation of local vibrational modes. Application to GaAs:C and cubic GaN:AsGöbel, C. et al. | 1999
- 762
-
Dopant-related metastable defects in particle irradiated n-GaAsLegodi, M.J. et al. | 1999
- 766
-
Terahertz tunnel ionization of DX-centers in AlGaAs: TeKetterl, H. et al. | 1999
- 770
-
Luminescence properties of Er,O-codoped III-V semiconductors grown by organometallic vapor phase epitaxyFujiwara, Y. et al. | 1999
- 774
-
Direct observation of local structure of DX center by capacitance X-ray absorption fine structureIshii, M. et al. | 1999
- 778
-
Influence of oxygen co-doping on the thermal quenching property of Er-related emission in Al0.70Ga0.30As:ErUekusa, S. et al. | 1999
- 781
-
Optical ionization of DX center in AlGaAs:Se by inner-shell excitationYoshino, Y. et al. | 1999
- 784
-
Mechanism for dicarbon defect formation in AlAs and GaAsLatham, C.D. et al. | 1999
- 788
-
Vibrational excited-state transitions of substitutional carbon in gallium arsenideAlt, H.C. et al. | 1999
- 792
-
New type of persistent photoconductivity related to DX-center: the study of interband PPC in Si-doped AlGaAsPiotrzkowski, R. et al. | 1999
- 796
-
Comparison of electronic and mechanical contrast in scanning tunneling microscopy images of semiconductor heterojunctionsFeenstra, R.M. et al. | 1999
- 803
-
Complexes of group-VI donors with hydrogen in GaPClerjaud, B. et al. | 1999
- 807
-
Local-vibrational-mode absorption of interstitial oxygen in GaPUlrici, W. et al. | 1999
- 811
-
Optical and magnetic resonance studies of As-impurities in AlSb: from isoelectronic point defects to planesGlaser, E.R. et al. | 1999
- 815
-
Deep electronic states near the surface of (In,Ga)P layers grown by MOVPE on GaAsKrispin, P. et al. | 1999
- 819
-
Interplay between Jahn-Teller coupling and axial crystal fields: GaP:(Cr, S)Baars, E. et al. | 1999
- 823
-
Modeling the diffusion of Be in InGaAs-InGaAsP epitaxial heterostructures under non-equilibrium point defect conditionsKetata, K. et al. | 1999
- 827
-
Local vibrational modes associated with semi-insulating InP:C, frequencies and line shapesNewman, R.C. et al. | 1999
- 831
-
Intrinsic doping in InP: ab initio calculations of PIn antisitesSchmidt, T.M. et al. | 1999
- 835
-
Structural and electronic properties of doped InP-InGaAs short period superlattices grown by LP-MOVPEHenriques, A.B. et al. | 1999
- 839
-
Deep levels associated with alpha irradiation of n-type MOCVD InPZafar Iqbal, M. et al. | 1999
- 843
-
Defect complexes induced by diffusion of group I acceptors into CdTeWolf, H. et al. | 1999
- 848
-
Intra-shell transitions of 3D metal ions (Fe, Co, Ni) in II-VI wide-gap semiconductor alloysSurkova, T.P. et al. | 1999
- 852
-
NMR study of bistable defects under in situ illuminationShroyer, M. et al. | 1999
- 856
-
Shallow doping of wide band-gap II-VI compoundsReinhold, B. et al. | 1999
- 861
-
The electronic structure of interstitial zinc in its two Td sites in ZnSeChow, K.H. et al. | 1999
- 866
-
Ab initio study of local vibrational modes in II-VI semiconductors: ZnS:Se and ZnSe:NPetzke, K. et al. | 1999
- 870
-
Luminescence and influence of defect concentration on excitons in 197Hg-197Au-doped CdTeHamann, J. et al. | 1999
- 875
-
Lattice site and diffusion of ion-implanted Li in as-grown and Se-rich ZnSeBharuth-Ram, K. et al. | 1999
- 879
-
Persistent photoconductivity and DLTS in indium-doped Cd0.9Mn0.1TeSzatkowski, J. et al. | 1999
- 883
-
Photoluminescence of deep levels in (CdZn) Te-correlation with diffusion length measurementFranc, J. et al. | 1999
- 887
-
Study of microscopic mechanisms of electrical compensation of donors in CdS by fast diffusors (Cu, Ag, or Au)Desnica-Frankovic, I.D. et al. | 1999
- 891
-
Hydrogen passivation of nitrogen-related energy levels in ZnSe and ZnSSe grown by MBESeghier, D. et al. | 1999
- 895
-
Anisotropic polarization of dislocation-related luminescence in thin ZnSe filmsWorschech, L. et al. | 1999
- 898
-
Induced defects in ZnS by electron and proton irradiation and defect-annealing behaviorBrunner, S. et al. | 1999
- 902
-
The deactivation of nitrogen acceptors in ZnSxSe1-x and MgyZn1-ySxSe1-x studied by combining positron annihilation, SIMS, and CV measurementsOila, J. et al. | 1999
- 907
-
Compensating defects and electrical activation of donors in CdSDesnica, U.V. et al. | 1999
- 911
-
Spin-flip Raman scattering in submonolayer CdSe-ZnSe structuresRuf, T. et al. | 1999
- 915
-
Evidence on a bond-breaking relaxation in the bistable centers In and Ga in CdF2Nissilä, J. et al. | 1999
- 919
-
Analysis of secondary phases in InSbBi thin filmsWagener, M.C. et al. | 1999
- 923
-
Determination of deep and shallow levels in conjugated polymers by electrical methodsStallinga, P. et al. | 1999
- 927
-
Differences in the electronic structure and compensation mechanism between n-type Zn- and Cd-doped CuInS2 crystalsYamamoto, T. et al. | 1999
- 930
-
Defects in CuIn(Ga)Se2 solar cell material characterized by positron annihilation: post-growth annealing effectsBörner, F. et al. | 1999
- 934
-
Do structural defects affect semiconducting properties of fullerene thin films?Katz, E.A. et al. | 1999
- 938
-
Confinement effects on phosphorus donors embedded in silicon nanocrystalsPawlak, B.J. et al. | 1999
- 944
-
Determination of potential fluctuations in modulation-doped SiGe-quantum wells from conduction electron spin resonanceJantsch, W. et al. | 1999
- 947
-
Phonon resonances in optical spectra of donors in quantum wellsBednarek, S. et al. | 1999
- 951
-
Boron in mesoporous Si - Where have all the carriers gone?Polisski, G. et al. | 1999
- 955
-
OH-related emitting centers in interface layer of porous siliconTorchynska, T.V. et al. | 1999
- 959
-
Hole and electron traps in the InGaAs-GaAs heterostructures with quantum dotsSobolev, M.M. et al. | 1999
- 963
-
Defect-limited carrier diffusion in In0.53Ga0.47As-InP single quantum wellMonte, A.F.G. et al. | 1999
- 967
-
Optical and magnetic properties for erbium-related centres in self-assembly silicon nanostructuresBagraev, N.T. et al. | 1999
- 971
-
Non-exponential capture of electrons in GaAs with embedded InAs quantum dotsWalther, C. et al. | 1999
- 976
-
Overcoming doping bottlenecks in semiconductors and wide-gap materialsZhang, S.B. et al. | 1999
- 981
-
Diffusion in isotopically controlled semiconductor systemsBracht, H. et al. | 1999
- 987
-
Calculation of the line shapes of electronic transitions at defects using the frozen Gaussian techniqueMckinnon, B. et al. | 1999
- 991
-
First-principles dynamics of defect reactions triggered by electronic excitationMiyamoto, Y. et al. | 1999
- 995
-
Numerical determination of one-dimensional energy bands bound to dislocationsFarvacque, J.L. et al. | 1999
- 999
-
Transient lattice vibration induced by coherent carrier captures at a deep-level defect and the effect on defect reactionsShinozuka, Y. et al. | 1999
- 1003
-
Real-space electronic structure calculations of charged clusters and defects in semiconductors using a multigrid methodJin, Y.-G. et al. | 1999
- 1007
-
Magnetic field effect on tunnel ionization of deep impurities by far-infrared radiationMoskalenko, A.S. et al. | 1999
- 1011
-
Study of bound exciton excited state structure using photothermal ionisation spectroscopyGibson, M. et al. | 1999
- 1015
-
Electron spin resonance study of the interaction of hydrogen with the (111)Si-SiO2 interface: Pb-hydrogen interaction kineticsStesmans, A. et al. | 1999
- 1022
-
Aspects of defects in silica related to dielectric breakdown of gate oxides in MOSFETsBlöchl, P.E. et al. | 1999
- 1027
-
Capacitively detected magnetic resonance of defects in MOSFETsBrandt, M.S. et al. | 1999
- 1031
-
Radiation-induced lattice defects in InGaAsP laser diodes and their effects on device performanceOhyama, H. et al. | 1999
- 1034
-
Impact of induced lattice defects on performance degradation of AlGaAs-GaAs p-HEMTsHakata, T. et al. | 1999
- 1037
-
Mechanism of injection-enhanced defect transformation in LPE GaAs structuresTorchynska, T.V. et al. | 1999
- 1041
-
The bulk damaged effects of clustered defects in irradiated silicon detectorsSaramad, S. et al. | 1999
- 1045
-
Defect-engineering rad-hard particle detectors: the role of impurities and inter-defect charge exchangeMacevoy, B.C. et al. | 1999
- 1050
-
Point defect reaction in (Al)GaInP STQW lasers enhanced by laser operationIhara, A. et al. | 1999