Adsorption of H2S on GaP(001) surface and passivation effects studied by AES, LEED and XPS (English)
- New search for: Fukuda, Y.
- New search for: Fukuda, Y.
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In:
Applied surface science
;
92
, 1-4
; 212-215
;
1995
-
ISSN:
- Article (Journal) / Print
-
Title:Adsorption of H2S on GaP(001) surface and passivation effects studied by AES, LEED and XPS
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Contributors:
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Published in:Applied surface science ; 92, 1-4 ; 212-215
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Publisher:
- New search for: Elsevier
-
Place of publication:Amsterdam [u.a.]
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Publication date:1995
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ISSN:
-
ZDBID:
-
Type of media:Article (Journal)
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Type of material:Print
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Language:English
- New search for: 52.78 / 35.18 / 33.68
- Further information on Basic classification
- New search for: 535/3485
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Keywords:
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Classification:
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Source:
Table of contents – Volume 92, Issue 1-4
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
-
A technological evolution from bulk crystalline age to multilayered thin film age in optoelectronic devicesHamakawa, Y. et al. | 1995
- 11
-
Recent advances in island and multilayer growth of metals on metals far from equilibriumVidali, G. et al. | 1995
- 20
-
LEEM studies of the early stages of epitaxial growthBauer, E. et al. | 1995
- 30
-
Low temperature growth of diamond-like films by cathodic arc plasma depositionChen, P.-L. et al. | 1995
- 35
-
Glow discharge sputtering deposition of thin films of Ag, Cr, Cu, Ni, Pd, Rh and their binary alloys onto NaCl and MgO. Experimental parameters and epitaxyReniers, F. et al. | 1995
- 43
-
Diamond-like coating prepared by pulsed laser sputtering of graphite in a high-vacuum environmentBogonin, I.A. et al. | 1995
- 47
-
Structural and physical properties of Co films DC-bias-plasma-sputter-deposited on MgO(001)Qiu, H. / Ohbuchi, T. / Nakai, H. / Hashimoto, M. et al. | 1996
- 47
-
Structural and physical propenies of Co films DC-bias-plasma-sputter-deposited on MgO(001)Qiu, H. et al. | 1995
- 52
-
Stability of BaTiO3 thin films on SiChang, L.H. et al. | 1995
- 57
-
Study of Ag thin films deposited on porous siliconYoung, T.F. et al. | 1995
- 61
-
XPS studies on SiC thin layers formed by ion implantation with a metal vapor vacuum arc ion sourceYan, H. et al. | 1995
- 66
-
Characterization of low temperature GaAs grown by molecular beam epitaxyLee, W.C. et al. | 1995
- 70
-
A method to tune the island size and improve the uniformity for the in situ formation of InGaAs quantum dots on GaAsChang, S.-Z. et al. | 1995
- 74
-
Growth mechanism of Ni on Pt(110) at low temperatureShern, C.S. et al. | 1995
- 79
-
Epitaxial growth of ZnSexTe1 - x by the VPE method and its photoluminescenceMochizuki, K. et al. | 1995
- 84
-
Effects of substrate cleaning and film thickness on the epitaxial growth of ultrahigh vacuum deposited Cu thin films on (001)SiLiu, C.S. et al. | 1995
- 89
-
Surface reaction mechanism in MOCVDNishizawa, J. et al. | 1995
- 99
-
Very low temperature polycrystalline silicon films with very large grains deposited for thin film transistor applicationsWang, K.C. et al. | 1995
- 106
-
Tribological properties of smooth diamond filmsPimenov, S.M. et al. | 1995
- 115
-
Textured diamond growth by microwave plasma chemical vapor depositionLiou, Y. et al. | 1995
- 119
-
Disordered Si-SiGe superlattices grown by ultrahigh vacuum chemical vapor depositionChang, T.-C. et al. | 1995
- 124
-
Characteristics of PECVD GaN thin filmsLee, C.H. et al. | 1995
- 128
-
Ge deposition from digermane on the Si(100)-(2 x 1) surfaceCho, H.-C. et al. | 1995
- 132
-
Growth of ZnSe thin films by radical assisted MOCVD methodAoki, T. et al. | 1995
- 138
-
Growth of Zn d-doped AlxGa1 - xAs (xLi, G. et al. | 1995
- 138
-
Growth of Zn -doped Al~xGa~1~-~xAs (x = 0-0.65) by low pressure metal organic vapour phase epitaxyLi, G. / Jagadish, C. et al. | 1996
- 142
-
Growth of the thin film Cd-Si-As system by metalorganic chemical vapor depositionKayama, H. et al. | 1995
- 147
-
Mirror polishing of InP wafer surfaces with NaOCl-citric acidMorisawa, Y. et al. | 1995
- 151
-
Electrosynthesis of yttrium chalcogenides from a non-aqueous bathMohite, U.K. et al. | 1995
- 155
-
Structural characterization of BaTiO3 films by sol-gel method using mono-substituting chelating agentKuo, W.-K. et al. | 1995
- 159
-
The electrical and optical characteristics of GaAs on Si by modified flow rate modulation epitaxyLee, M.K. et al. | 1995
- 163
-
Characteristics of spray pyrolytic ZnO thin filmsLee, C.H. et al. | 1995
- 167
-
Fluorine doped tin oxide films from spray pyrolysis of stannous fluoride solutionsMorris, G.C. et al. | 1995
- 171
-
Sprayed films of stannite Cu2ZnSnS4Nakayama, N. et al. | 1995
- 176
-
Post cleaning of chemical mechanical polishing processLiu, C.-W. et al. | 1995
- 180
-
Ultra-thin gate dielectrics grown by low-temperature processes for applications to ULSI devicesHwang, H.-L. et al. | 1995
- 193
-
The properties of SiO2 films using direct photo-chemical vapor deposition on strained SiGe layersLin, C.T. et al. | 1995
- 198
-
Porous silicon studied by SiL23 soft X-ray emissionCrisp, R.S. et al. | 1995
- 204
-
Application of irradiation-then-nitridation to improve the radiation hardness in MOS gate dielectricsLee, K.-C. et al. | 1995
- 208
-
Rapid thermal post-metallization annealing effect on thin gate oxidesJeng, M.-J. et al. | 1995
- 212
-
Adsorption of H2S on GaP(001) surface and passivation effects studied by AES, LEED and XPSFukuda, Y. et al. | 1995
- 216
-
A theoretical analysis of the molecular and dissociative adsorption of H2O on GaAs(110)Rincon, R. et al. | 1995
- 222
-
AES and SRUPS studies on surface passivation of GaAs by (NH 4))2Sx sulfurization techniquesHsieh, J.T. et al. | 1995
- 227
-
Surfactant modified growth of CuInSe2 thin filmsTseng, B.-H. et al. | 1995
- 232
-
Influence of KCN treatment on CuInS2 thin filmsOgawa, Y. et al. | 1995
- 237
-
Atomistic dynamics of interfacial processes: Films, junctions and nanostructuresLandman, U. et al. | 1995
- 257
-
Computer simulation of nucleation on (001) Kossel crystal surface with and without diffusionTang, T.B. et al. | 1995
- 261
-
Phenomenological approach in modeling of thin film nucleation from the liquid phaseSakalo, T.V. et al. | 1995
- 267
-
Ultra accurate measurements of interface parameters with free-electron laserColuzza, C. et al. | 1995
- 273
-
Photoemission spectromicroscopy and free electron laser spectroscopy of surfaces and interfacesMargaritondo, G. et al. | 1995
- 282
-
In situ X-ray reflectivity measurement of thin film growth during vacuum depositionLee, C.-H. et al. | 1995
- 287
-
XPS study of the reaction of the Si(100) surface with a C 2)H4 beamTakagaki, T. et al. | 1995
- 291
-
Electron paramagnetic resonance measurements on porous siliconNakamura, T. et al. | 1995
- 295
-
Photoellipsometric studies on CdTe thin filmsPaulson, P.D. et al. | 1995
- 300
-
Ellipsometric study of thermal and laser annealed amorphous and microcrystalline silicon filmsJayatissa, A. H. / Suzuki, M. / Nakanishi, Y. / Hatanaka, Y. et al. | 1996
- 300
-
Ellipsometric study of thermal aod laser annealed amorphous and microcrystalline silicon filmsJayatissa, A.H. et al. | 1995
- 306
-
Diffusion length measurements on electrodeposited CuInSe2 cellsQiu, S.N. et al. | 1995
- 311
-
Interface phase transition as observed in ultra thin FeSi2 epilayersDerrien, J. et al. | 1995
- 321
-
High-temperature STM for atomic processes on semiconductor surfacesIwatsuki, M. et al. | 1995
- 331
-
Interface effects in melting of Pb clusters on the Cu(111) surfaceLuo, E. Z. / Cai, Q. / Chung, W. F. / Altman, M. S. et al. | 1996
- 331
-
Interface effects in meltiog of Pb clusters on the Cu(111) surfaceLuo, E.Z. et al. | 1995
- 335
-
Interdiffusion and reactions in the Cu/TiN/Si thin film systemGong, Y. S. / Lin, J.-C. / Lee, C. et al. | 1996
- 335
-
Interdiffusion aod reactions in the Cu-TiN-Si thin film systemGong, Y.S. et al. | 1995
- 340
-
The determination of the average compositions of amorphous interlayers in the V-Si system using a buried ultrathin oxide layer and a capping Mo layer to define the reference planes for interdiffusionLin, J.H. et al. | 1995
- 345
-
Theory of dipole generation at cleaved semiconductor surfacesChen, B. et al. | 1995
- 350
-
Coalescence of cylindrical islands on the crystal surface accompanied by correlated changes of their heights and radiiSakalo, T.V. et al. | 1995
- 357
-
Surface electronic properties of GaSe-covered Si(111) upon UHV thermal desorption of the GaSe epitaxial layerReqqass, H. et al. | 1995
- 362
-
Schottky barrier formation for passivated semiconductor surfacesSaiz-Pardo, R. et al. | 1995
- 367
-
Chemical trends of barrier heights in metal-semiconductor contacts: On the theory of the slope parameterMönch, W. et al. | 1995
- 372
-
Investigation of the dosage effect on the activation of arsenic- and boron-implanted low-pressure chemical vapor deposition (LPCVD) amorphous-silicon filmsWang, F.-S. et al. | 1995
- 378
-
Structural and electrical properties of excimer laser deposited PLZT thin filmsCheng, H.-F. et al. | 1995
- 382
-
Structural characterization of epitaxial ferromagnetic MnSb layers grown by hot-wall epitaxyTatsuoka, H. et al. | 1995
- 387
-
Refractive index behavior of boron-doped silica films by plasma-enhanced chemical vapor depositionHorng, R.H. et al. | 1995
- 391
-
Structural and optical properties of Pd1 - xInx thin filmsWu, W.T. et al. | 1995
- 396
-
PL properties of porous Si anodized with various light illuminationsMimura, H. et al. | 1995
- 400
-
The influence of residual O2 gas in vacuum on the structural and luminescent properties of ZnF2:Mn thin filmsNakanishi, Y. et al. | 1995
- 404
-
Study of the internal electric fields across the interfaces in the GaAs/(1A1,Ga)As microstructuresLu, C. R. / Chang, C. L. / Liou, C. H. / Anderson, J. R. / Stone, D. R. / Wilson, R. A. et al. | 1996
- 404
-
Study of the internal electric fields across the interfaces in the GaAs-(Al,Ga)As microstructuresLu, C.R. et al. | 1995
- 408
-
Band lineup modification by Ge interlayer deposition at II-VI-III-V semiconductor heterojunctionsRodriguez-Hernández, P. et al. | 1995
- 412
-
Interface of CuIn1 - xGaxSe2-GaAs heterostructureTseng, B.-H. et al. | 1995
- 417
-
Surface charge transfer in plastically deformed SiPohoryles, B. et al. | 1995
- 421
-
Electrochromic behavior of amorphous cobaltphthalocyanine thin filmsMasui, M. et al. | 1995
- 426
-
Study of biochemical reactions in thin organic films by means of evanescent optical waveKsenevich, T.I. et al. | 1995
- 431
-
In situ radiotracer method for study of adsorption on semiconductor single crystal surfacesSzklarczyk, M. et al. | 1995
- 436
-
Microscopic theory of atomic properties of the surfaces of anharmonic crystal singular faces of fullerite C~6~0Zubov, V. I. / Tretiakov, N. P. / Teixeira Rabelo, J. N. et al. | 1996
- 436
-
Microscopic theory of atomic properties of the surfaces of anharmonic crystals. Singular faces of fullerite C60Zubov, V.I. et al. | 1995
- 441
-
Simulation of polymer film and surface behaviour in a space environmentSkurat, V.E. et al. | 1995
- 447
-
An electrochemical impedance spectroscopy study of thin polymeric filmsBorkowska, R. et al. | 1995
- 452
-
Electrical properties of laser deposited YBa~2Cu~3O~7~-~ films on silicon wafersChuang, F. Y. / Lin, C. T. / Sun, C. Y. / Cheng, H. F. / Lin, I. N. et al. | 1996
- 452
-
Electrical properties of laser deposited YBa2Cu3O7 -d) films on silicon wafersChuang, F.Y. et al. | 1995
- 457
-
Pulsed-laser deposition of "diamond-like" carbon coating on YBa 2)Cu3O7 high-Tc superconductor filmsKaruzskii, A.L. et al. | 1995
- 461
-
Investigation on origin of excess noise in superconducting and normal state BiSrCaCuO filmsLi, A.L. et al. | 1995
- 466
-
Magnetostochastic resonance as a new method for investigations of surface and thin film magnetismGrigorenko, A.N. et al. | 1995
- 471
-
Effect of substrate-film interface on magnetic properties of Mn 4)N filmsChing, K.-M. et al. | 1995
- 475
-
Coercivity of gamma-(Fe~0~.~7~4Mn~0~.~1~5Co~0~.~1~1)~2O~3 thin films by dc reactive magnetron sputteringChang, W.-D. / Chin, T.-S. et al. | 1996
- 475
-
Coercivity of g-(Fe0.74Mn0.15Co0.11) 2)O3 thin films by dc reactive magnetron sputteringChang, W.-D. et al. | 1995
- 480
-
Novel epitaxial growth and magnetotransport characterization of single crystal Co(1120)-Cr(100) superlattices on Mo buffer layersHuang, J.C.A. et al. | 1995
- 484
-
Semiconductor bond rupture phenomena and surface propertiesHaneman, D. et al. | 1995
- 491
-
Oxygen etching of the Si(100)-(2 x 1) surfaceWei, Y. et al. | 1995
- 496
-
First-principles calculations of Ga adatom structures for Ge(111) and Si(111) surfacesCheng, C. et al. | 1995
- 501
-
Structural properties of Na adsorbed on a Ge(100)2 x 1 surface: All electron, ab initio, density functional, cluster calculationsSpiess, L. et al. | 1995
- 507
-
Structural evolution and atomic structure of ultrahigh vacuum deposited Au thin films on silicon at low temperaturesChen, C.R. et al. | 1995
- 513
-
XPS, AES and LEED studies of Cu deposited on Cr2O3(0001) surfacesGuo, Q. et al. | 1995
- 519
-
High quality quantum dots fabricated by molecular beam epitaxyLee, C.-P. et al. | 1995
- 526
-
Self-organized growth of InAs-GaAs quantum boxesMoison, J.M. et al. | 1995
- 532
-
Noise characteristics of an infrared hot-electron transistorKuan, C.H. et al. | 1995
- 537
-
Voltage-tunable far-infrared photodetector with a very large tuning rangeHuang, Y. et al. | 1995
- 543
-
Photoreflectance study of GaAs/Al~0~.~3Ga~0~.~7As resonant asymmetric double quantum wells with Si -doping in side barriersLu, C. R. / Du, S. K. / Anderson, J. R. / Stone, D. R. / Wilson, R. A. et al. | 1996
- 543
-
Photoreflectance study of GaAs-Al0.3Ga0.7As resonant asymmetric double quantum wells with Si d-doping in side barriersLu, C.R. et al. | 1995
- 547
-
Stimulated blue emission processes in Zn1 - xCdxSe-ZnSe multi-quantum wellsJen, J.Y. et al. | 1995
- 552
-
Diffusion phenomena in MBE grown Si-SiGe single quantum wells studied by PL and TEM measurementsZeindl, H.P. et al. | 1995
- 557
-
Dopant activation and strain relaxation in P-implanted metastable pseudomorphic Ge0.12Si0.88 grown on Si(100)Lie, D.Y.C. et al. | 1995
- 566
-
Improvement of optical properties of gas source MBE grown GaP-AlP short period superlatticesKim, J.H. et al. | 1995
- 571
-
Light emission from the porous boron -doped Si superlatticeChang, T.-C. / Yeh, W.-K. / Hsu, M.-Y. / Chang, C.-Y. / Lee, C.-P. / Jung, T.-G. / Tsai, W.-C. / Huang, G.-W. / Mei, Y.-J. et al. | 1996
- 571
-
Light emission from the porous boron d-doped Si superlatticeChang, T.-C. et al. | 1995
- 575
-
Novel light quantum and nuclear particle detectors based on the avalanche metal-resistivity layer-semiconductor structureSadygov, Z.Y. et al. | 1995
- 579
-
Theory of room temperature quantized resistance steps in electroformed metal-a-Si:H-metal structuresHajto, J. et al. | 1995
- 585
-
Effects of contact geometry in wide Hall barsJou, H. et al. | 1995
- 589
-
Electroluminescence in thin filmsMauch, R.H. et al. | 1995
- 598
-
Si-based optical devices using porous materialsMimura, H. et al. | 1995
- 606
-
Thin film photovoltaicsSchock, H.W. et al. | 1995
- 617
-
Correlation between light emission and dangling bonds in porous siliconShimasaki, M. et al. | 1995
- 621
-
Formation of bottom oxides in porous silicon films by anodic oxidationLee, C.H. et al. | 1995
- 626
-
Properties of multilayered thin films for thermal ink-jet printing devicesWuu, D.S. et al. | 1995
- 630
-
Solar cells from thin films prepared by periodic pulse electrodepositionMorris, G.C. et al. | 1995
- 634
-
Gas sensitive properties of copperphthalocyanine thin filmsMasui, M. et al. | 1995
- 635
-
Surface fluorination of electrophotographic photoreceptors by plasma treatment for contact charging with a wet polymer rollerSatoh, M. et al. | 1995
- 639
-
Electrocatalytic activities of proton-exchanged layered oxides for the anodic oxidation on the solid oxide fuel cellSato, K. et al. | 1995
- 647
-
Effect of Nb metal ion in TiO2 oxygen gas sensorSharma, R.K. et al. | 1995
- 651
-
Tribochemical characterization of the lubrication film at the Si~3N~4/Si~3N~4 interface sliding in aqueous solutionsHonda, F. / Saito, T. et al. | 1996
- 651
-
Tribochemical characterization of the lubrication film at the Si(sub 3)N4-Si3N4 interface sliding in aqueous solutionsHonda, F. et al. | 1995
- 656
-
Carbon nitride - Prospects for ultimate performance of superhard materialsUglov, S.A. et al. | 1995
- 660
-
Reliability study of sub-micron titanium silicide contactsLin, C.C. et al. | 1995
- 665
-
Tungsten absorber on silicon membraneLi, D.C. et al. | 1995
- 673
-
Author index| 1995
- 680
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Subject index| 1995
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Conference organization| 1995
-
Preface| 1995
-
Sponsors| 1995