MBE growth of InAs-InAsSb-AlAsSb structures for mid-infrared lasers (English)
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- New search for: Grech, P.
- New search for: El Gazouli, M.
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In:
Journal of crystal growth
;
223
, 3
; 341-348
;
2001
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ISSN:
- Article (Journal) / Print
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Title:MBE growth of InAs-InAsSb-AlAsSb structures for mid-infrared lasers
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Contributors:Wilk, A. ( author ) / Genty, F. / Fraisse, B. / Boissier, G. / Grech, P. / El Gazouli, M. / Christol, P. / Oswald, J. / Simecek, T. / Hulicius, E.
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Published in:Journal of crystal growth ; 223, 3 ; 341-348
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Publisher:
- New search for: Elsevier
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Place of publication:Amsterdam [u.a.]
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Publication date:2001
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ISSN:
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ZDBID:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
- New search for: 38.31 / 33.61 / 35.90
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Keywords:
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Source:
Table of contents – Volume 223, Issue 3
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 321
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Controlling the self-assembly of InAs-InP quantum dotsWilliams, R.L. et al. | 2001
- 332
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Structure of thin polycrystalline silicon films on ceramic substratesvan Zutphen, A.J.M.M. et al. | 2001
- 341
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MBE growth of InAs-InAsSb-AlAsSb structures for mid-infrared lasersWilk, A. et al. | 2001
- 349
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Growth and characterisation of MnTe crystalsReig, C. et al. | 2001
- 357
-
A new approach to the crystal growth of Hg1-xMnxTe by the cold travelling heater method (CTHM)Reig, C. et al. | 2001
- 363
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Effect of InxGa1-xAs (0<=x<=0.4) capping layer on self-assembled 1.3(micro)m wavelength InAs-GaAs quantum islandsWang, X.D. et al. | 2001
- 363
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Effect of InxGa1-xAs (0x0.4) capping layer on self-assembled 1.3mm wavelength InAs/GaAs quantum islandsWang, X. D. / Niu, Z. C. / Feng, S. L. / Miao, Z. H. et al. | 2001
- 369
-
ALE growth and optical characterization of ZnSe-ZnS strained quantum well structures on Si substrateYokoyama, Meiso et al. | 2001
- 376
-
Growth and properties of ferroelectric potassium lithium niobate (KLN) crystal grown by the Czochralski methodSoo Kim, Jin et al. | 2001
- 383
-
Crystal growth of Ce-doped and undoped LiCaAlF6 by the Czochralski technique under CF4 atmosphereShimamura, Kiyoshi et al. | 2001
- 389
-
Crack-free K3Li2-xNb5+2xO15+2x crystals grown by the resistance-heated Czochralski techniquePan, Shoukui et al. | 2001
- 394
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Growth and characterization of semiconducting Pb1-xMgxS thin films prepared by hot-wall epitaxyAbe, S. et al. | 2001
- 399
-
CuSbS2 thin film formed through annealing chemically deposited Sb2S3-CuS thin filmsRodriguez-Lazcano, Y. et al. | 2001
- 407
-
Crystallization of a human Bence-Jones protein in microgravity using vapor diffusion in capillariesAlvarado, U.R. et al. | 2001
- 415
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Scattering centers caused by adding metaphosphate into KDP crystalsShenglai, Wang et al. | 2001
- 420
-
Particle trapping at an advancing solidification front with interfacial-curvature effectsRempel, A.W. et al. | 2001
- 433
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An analysis of lamp irradiation in ellipsoidal mirror furnacesRivas, Damián et al. | 2001
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EditorialStringfellow, G.B. et al. | 2001