Microscopic origin of Er3+ emission in mixed amorphous-nanocrystalline Si:H films (English)
- New search for: Aldabergenova, S.B.
- New search for: Aldabergenova, S.B.
- New search for: Albrecht, M.
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- New search for: Viner, J.
- New search for: Taylor, P.C.
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In:
Materials science and engineering / B
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81
, 1
; 29-31
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2001
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ISSN:
- Article (Journal) / Print
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Title:Microscopic origin of Er3+ emission in mixed amorphous-nanocrystalline Si:H films
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Contributors:Aldabergenova, S.B. ( author ) / Albrecht, M. / Strunk, H.P. / Viner, J. / Taylor, P.C. / Andreev, A.A.
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Published in:Materials science and engineering / B ; 81, 1 ; 29-31
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Publisher:
- New search for: Elsevier
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Place of publication:Amsterdam [u.a.]
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Publication date:2001
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ISSN:
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ZDBID:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
- New search for: 51.00 / 51.45
- Further information on Basic classification
- New search for: 535/5100
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Keywords:
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Source:
Table of contents – Volume 81, Issue 1
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
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Rare earth doped semiconductors IIIZavada, John M. et al. | 2001
- 3
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Exciton-erbium energy transfer in Si nanocrystal-doped SiO2Kik, P.G. et al. | 2001
- 9
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Excitation and non-radiative de-excitation processes in Er-doped Si nanocrystalsPriolo, Francesco et al. | 2001
- 16
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Investigation of energy exchange between silicon nanocrystals and Er3+ in silicaChryssou, C.E. et al. | 2001
- 19
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Broad-band and flashlamp pumping of 1.53 my m emission from erbium-doped silicon nanocrystalsKenyon, A.J. / Chryssou, C.E. / Pitt, C.W. / Shimizu-Iwayama, T. / Hole, D.E. / Sharma, N. / Humphreys, C.J. et al. | 2001
- 19
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Broad-band and flashlamp pumping of 1.53 (micro)m emission from erbium-doped silicon nanocrystalsKenyon, A.J. et al. | 2001
- 19
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Broad-band and flashlamp pumping of 1.53 mm emission from erbium-doped silicon nanocrystalsKenyon, A. J. / Chryssou, C. E. / Pitt, C. W. / Shimizu-Iwayama, T. / Hole, D. E. / Sharma, N. / Humphreys, C. J. et al. | 2001
- 23
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Sensitization of the 1.54 mm luminescence of Er3+ in SiO2 films by Yb and Si-nanocrystalsKozanecki, A. / Sealy, B. J. / Homewood, K. / Ledain, S. / Jantsch, W. / Kuritsyn, D. et al. | 2001
- 23
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Sensitization of the 1.54 my m luminescence of Er3+ in SiO2 films by Yb and Si-nanocrystalsKozanecki, A. / Sealy, B.J. / Homewood, K. / Ledain, S. / Jantsch, W. / Kuritsyn, D. et al. | 2001
- 23
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Sensitization of the 1.54 (micro)m luminescence of Er3+ in SiO2 films by Yb and Si-nanocrystalsKozanecki, A. et al. | 2001
- 29
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Microscopic origin of Er3+ emission in mixed amorphous-nanocrystalline Si:H filmsAldabergenova, S.B. et al. | 2001
- 32
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Photoluminescence of erbium doped microcrystalline silicon thin films produced by reactive magnetron sputteringCerqueira, M.F. et al. | 2001
- 36
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Erbium in Si-based light confining structuresLipson, M. et al. | 2001
- 40
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Room-temperature photoluminescence from erbium-doped multilayer porous silicon microcavityZhou, Y. et al. | 2001
- 43
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Confinement induced enhancement of the emission in Er-implanted Si-SiO2 quantum wells fabricated on SOI substratesSotta, D. et al. | 2001
- 46
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Nonradiative processes involving rare-earth impurities in nanostructuresLanger, Jerzy M. et al. | 2001
- 52
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Stimulated emission in erbium-doped silicon structures under optical pumpingBresler, M.S. et al. | 2001
- 56
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Separation of dislocation- and erbium-related photoluminescence by time resolved studiesVernon-Parry, K.D. et al. | 2001
- 59
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Photoluminescence from Si:Er under front and backside excitationPawlak, B.J. et al. | 2001
- 62
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Si:Er:O layers grown by molecular beam epitaxy: structural, electrical and optical propertiesScalese, S. et al. | 2001
- 67
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Uniformly and selectively doped silicon:erbium structures produced by the sublimation MBE methodStepikhova, M. et al. | 2001
- 71
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Electronic properties of Erbium doped amorphous siliconKleider, J.P. et al. | 2001
- 74
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Effects of oxygen coimplantation on the formation of donor centers in erbium-implanted siliconEmtsev, V.V. et al. | 2001
- 77
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High resolution DLTS of hydrogen reactions with defects in erbium-implanted siliconKan, P.Y.Y. et al. | 2001
- 80
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Mid-infrared induced quenching of photoluminescence in Si:ErForcales, M. et al. | 2001
- 83
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Range of ion-implanted rare earth elements in Si and SiO2Palmetshofer, L. et al. | 2001
- 86
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Optimisation of Er centers in Si for reverse biased light emitting diodesJantsch, W. et al. | 2001
- 91
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Infrared LEDs and microcavities based on erbium-doped silicon nanocompositesLopez, H.A. et al. | 2001
- 97
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Multiple color capability from rare earth-doped gallium nitrideSteckl, A.J. et al. | 2001
- 102
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Efficient electroluminescence from rare earth doped MOS diodesWang, S. et al. | 2001
- 105
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Efficient 1.54 my m light emission from Si/SiGe/Si:Er:O transistors prepared by differential MBEDu, C.X. / Duteil, F. / Hansson, G.V. / Ni, W.X. et al. | 2001
- 105
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Efficient 1.54 mm light emission from Si/SiGe/Si:Er:O transistors prepared by differential MBEDu, C. X. / Duteil, F. / Hansson, G. V. / Ni, W. X. et al. | 2001
- 105
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Efficient 1.54 (micro)m light emission from Si-SiGe-Si:Er:O transistors prepared by differential MBEDu, Chun-Xia et al. | 2001
- 109
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Electron and hole impact excitation of Er in MBE grown Si:O and Si1-yCy diodesMarkmann, M. et al. | 2001
- 113
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Electric field-induced fabrication of microscopic Si-based optoelectronic devices for 1.55 and 1.16 my m IR electroluminescenceChernyak, L. / Ghabboun, J. / Lyahovitskaya, V. / Cahen, D. et al. | 2001
- 113
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Electric field-induced fabrication of microscopic Si-based optoelectronic devices for 1.55 and 1.16 mm IR electroluminescenceChernyak, L. / Ghabboun, J. / Lyahovitskaya, V. / Cahen, D. et al. | 2001
- 113
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Electric field-induced fabrication of microscopic Si-based optoelectronic devices for 1.55 and 1.16 (micro)m IR electroluminescenceChernyak, Leonid et al. | 2001
- 116
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Spectroscopic studies of the visible and infrared luminescence from Er doped GaNHömmerich, U. et al. | 2001
- 121
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Effect of carbon doping on GaN:ErOverberg, Mark et al. | 2001
- 127
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Annealing behavior of luminescence from erbium-implanted GaN filmsZavada, J.M. et al. | 2001
- 132
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High temperature annealing of Er implanted GaNAlves, E. et al. | 2001
- 136
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Temperature dependence of photoluminescence spectra from multiple Er3+ sites in Er-implanted undoped and Mg-doped GaNKim, S. et al. | 2001
- 140
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Cathodoluminescence study of GaN doped with TbLozykowski, H.J. et al. | 2001
- 144
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Excitation of Er3+ ions in mixed amorphous-nanocrystalline GaN:Er filmsAldabergenova, S.B. et al. | 2001
- 147
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Site selective excitation of Er-implanted GaNPrzybylinska, H. et al. | 2001
- 150
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Characterization and annealing of Eu-doped GaNOverberg, Mark et al. | 2001
- 153
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Luminescence properties of Er,O-codoped GaP grown by organometallic vapor phase epitaxyFujiwara, Yasufumi et al. | 2001
- 157
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Electrical and compositional properties on Bridgman-grown Gd-doped GaSb substratesPlaza, J.L. et al. | 2001
- 161
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Photoluminescence of ytterbium doped amorphous silicon and silicon carbideTerukov, E.I. et al. | 2001
- 164
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A comparison of the photoluminescence decay of erbium in silicon and silicon-germaniumVernon-Parry, K.D. et al. | 2001
- 167
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Optical properties of Pr implanted GaN epilayers and AlxGa1-xN alloysEllis, C.J. et al. | 2001
- 171
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All-optical signal inverter derived from negative nonlinear absorption effectYamada, Toshikazu et al. | 2001
- 174
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Optical bistability derived from the negative nonlinear absorption effect in erbium doped materialsMaeda, Yoshinobu et al. | 2001
- 176
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Holmium-related luminescence in crystalline siliconSobolev, N. A. / Emelyanov, A. M. / Nikolaev, Y. A. / Andreev, B. A. / Krasilnik, Z. F. et al. | 2001
- 179
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Photoluminescence and X-ray absorption near edge structure of Eu ions doped SiO2 thin filmsLiu, F. / Zhu, M. / Liu, T. et al. | 2001
- 182
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Mechanism of electroluminescence in the amorphous silicon-based erbium-doped structuresYassievich, I. N. / Bresler, M. S. / Gusev, O. B. / Pak, P. E. / Tsendin, K. D. / Terukov, E. I. et al. | 2001
- 185
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Room-temperature photoluminescence from Tb3+ ions in SiO2 and a-SiC:H thin films deposited by magnetron co-sputteringSendova-Vassileva, M. / Nikolaeva, M. / Dimova-Malinovska, D. / Tzolov, M. / Pivin, J. C. et al. | 2001
- 188
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New laser crystals based on KPb2Cl5 for IR regionIsaenko, L. / Yelisseyev, A. / Tkachuk, A. / Ivanova, S. / Vatnik, S. / Merkulov, A. / Payne, S. / Page, R. / Nostrand, M. et al. | 2001
- 191
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Terbium photoluminescence in polysiloxane filmsGaponenko, N. V. / Sergeev, O. V. / Borisenko, V. E. / Pivin, J. C. / Skeldon, P. / Thompson, G. E. / Hamilton, B. / Misiewicz, J. / Bryja, L. / Kudrawiec, R. et al. | 2001
- 194
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Magnetization and magnetic susceptibility of Gd based PbSErrebbahi, A. / Almaggoussi, A. / Rochefeuille, S. / Viennois, R. / Charar, S. / Ravot, D. et al. | 2001
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Sponsors| 2001