Evaluation of free-carrier concentration in Si+-implanted InP by means of photoluminescence (English)
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In:
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms
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175
, 1
; 246-251
;
2001
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ISSN:
- Article (Journal) / Print
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Title:Evaluation of free-carrier concentration in Si+-implanted InP by means of photoluminescence
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- New search for: Elsevier
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Place of publication:Amsterdam [u.a.]
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Publication date:2001
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
- New search for: 535/3450
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Table of contents – Volume 175, Issue 1
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
-
Energy dissipation of fast heavy ions in matterSchiwietz, G. et al. | 2001
- 12
-
Production of nanodiamonds by high-energy ion irradiation of graphite at room temperatureDaulton, T.L. et al. | 2001
- 21
-
Implantation-induced disorder in amorphous Ge: Production and relaxationRidgway, M.C. et al. | 2001
- 26
-
Accumulation, dynamic annealing and thermal recovery of ion-beam-induced disorder in silicon carbideWeber, W.J. et al. | 2001
- 31
-
Chemical effects in collision cascadesNordlund, K. et al. | 2001
- 36
-
Craters produced on Al, Cu and Au by Ar cluster impactsBirtcher, R.C. et al. | 2001
- 40
-
Nanocluster formation during ion irradiation of SiO2-Ag-SiO2 multilayersBirtcher, R.C. et al. | 2001
- 46
-
Range parameters of 18O implanted into Si and SiO2de Souza, J.P. et al. | 2001
- 51
-
Irradiation-induced defect configurations in Ge substrates characterised with perturbed angular correlationGlover, C.J. et al. | 2001
- 56
-
Sputtering of high Tc superconductor YBa2Cu3O7-d by high energy heavy ionsMatsunami, Noriaki et al. | 2001
- 62
-
The study of lattice damage using slow positrons following low energy B+ implantation of siliconGwilliam, R.M. et al. | 2001
- 68
-
Ion-induced photon emission of magnesium aluminate spinel during 60 keV Cu- implantationBandourko, V. et al. | 2001
- 74
-
Effect of Ar irradiation to Xe precipitate in AlMitsuishi, K. et al. | 2001
- 78
-
Anomalous damaging behaviour of AlAs during ion implantation at 15 KWendler, E. et al. | 2001
- 83
-
In situ investigation of AlAs-GaAs interfaces during ion implantation at 15 KWendler, E. et al. | 2001
- 88
-
Track formation in KTiOPO4 by MeV implantation of light ionsWesch, W. et al. | 2001
- 93
-
Experimental energy straggling of protons in thin solid foilsEckardt, J.C. et al. | 2001
- 98
-
Random energy loss and straggling study of Li into Sida Silva, D.L. et al. | 2001
- 102
-
Simulation of topography evolution and damage formation during TEM sample preparation using focused ion beamsBoxleitner, W. et al. | 2001
- 108
-
Artificial neural network analysis of RBS data of Er-implanted sapphireBarradas, N.P. et al. | 2001
- 113
-
High energy ion range and deposited energy calculation using the Boltzmann-Fokker-Planck splitting of the Boltzmann transport equationMozolevski, I.E. et al. | 2001
- 119
-
The role of point defects in ion beam induced crystallization of silicon investigated by molecular dynamics simulationsWeber, B. et al. | 2001
- 125
-
Improved charge-state formulasSchiwietz, G. et al. | 2001
- 132
-
The effects of radiation damage and impurities on void dynamics in siliconDonnelly, S.E. et al. | 2001
- 140
-
Ion beam synthesis of undoped and Er-doped Si nanocrystalsFranz`o, G. et al. | 2001
- 148
-
Suppression of rare-earth implantation-induced damage in GaNVantomme, A. et al. | 2001
- 154
-
Efficiency of dislocations and cavities for gettering of Cu and Fe in siliconStritzker, B. et al. | 2001
- 159
-
Electrical, electronic and optical characterisation of ion beam synthesised b-FeSi2 light emitting devicesLourenço, M.A. et al. | 2001
- 164
-
The crystallisation of deep amorphous wells in silicon produced by ion implantationLiu, A.C.Y. et al. | 2001
- 169
-
The influence of ion-implantation damage on hydrogen-induced ion-cutHöchbauer, T. et al. | 2001
- 176
-
Helium implantation induced metal gettering in silicon at half of the projected ion rangePeeva, A. et al. | 2001
- 182
-
Quantitative evolution of vacancy-type defects in high-energy ion-implanted Si: Au labeling and the vacancy implanterKalyanaraman, R. et al. | 2001
- 187
-
Properties of InAs nanocrystals in silicon formed by sequential ion implantationTchebotareva, A.L. et al. | 2001
- 193
-
Self-ion-induced swelling of germaniumStritzker, B. et al. | 2001
- 197
-
Electron-induced regrowth of isolated amorphous zones in GaAsJencic, I. et al. | 2001
- 202
-
Microstructure of high-energy O and Cu ion-implanted silica glassesNakao, S. et al. | 2001
- 208
-
Correlation between Er-luminescent centers and defects in Si co-implanted with Er and ONakashima, K. et al. | 2001
- 214
-
High-dose ion implantation into GaNKucheyev, S.O. et al. | 2001
- 219
-
Compositional dependence of defect mobility and damage buildup in AlxGa1-xAsStonert, A. et al. | 2001
- 224
-
Porous silicon implanted with nitrogen by plasma immersion ion implantationBeloto, A.F. et al. | 2001
- 229
-
Reciprocal space mapping of silicon implanted with nitrogen by plasma immersion ion implantationAbramof, E. et al. | 2001
- 235
-
Electrical isolation of n-type InP by ion bombardment: Dose dependence and thermal stabilityBoudinov, H. et al. | 2001
- 241
-
Study of Fe+ implanted GaNAlves, E. et al. | 2001
- 246
-
Evaluation of free-carrier concentration in Si+-implanted InP by means of photoluminescenceIbáñez, J. et al. | 2001
- 252
-
Lattice recovery by rapid thermal annealing in Mg+-implanted InP assessed by Raman spectroscopyMarcos, B. et al. | 2001
- 257
-
Effects of the ion energy on damage production in MeV ion-implanted GaAsWesch, W. et al. | 2001
- 262
-
Emission channeling studies of implanted 167mEr in InPWahl, U. et al. | 2001
- 268
-
Optical and structural properties of 6H-SiC implanted with silicon as a function of implantation dose and temperatureHéliou, R. et al. | 2001
- 274
-
Ar-implanted epitaxially grown HgCdTe: evaluation of structural damage by RBS and TEMAguirre, M.H. et al. | 2001
- 280
-
Structural characterisation of amorphised compound semiconductorsRidgway, M.C. et al. | 2001
- 286
-
Study of the radiative and nonradiative processes of rare earth implanted semiconductors at low temperaturesKimura, T. et al. | 2001
- 292
-
Electrical characterisation of epitaxially grown n-GaN bombarded with high- and low-energy protonsAuret, F.D. et al. | 2001
- 296
-
Electronic transport in thin Cr films modified by Fe ion implantationHeck, C. et al. | 2001
- 300
-
A comparative study of vacancies produced by proton implantation of silicon using positron annihilation and deep level transient spectroscopyLourenço, M.A. et al. | 2001
- 305
-
Correlation between the depth profiles of the implantation-induced carriers and the lattice strains in high-energy implanted and annealed InPMolnar, B. et al. | 2001
- 309
-
Properties of b-FeSi2 grown by combined ion irradiation and annealing of Fe-Si bilayersMilosavljevic, M. et al. | 2001
- 314
-
The control of gold nanocluster sizes and volume fraction in dielectric thin films via ion-beam assisted depositionSchiestel, S. et al. | 2001
- 319
-
Movement of defects and atoms during ion beam induced crystallizationKinomura, A. et al. | 2001
- 324
-
Metallization of ion beam synthesized Si-3C-SiC-Si layer systems by high-dose implantation of transition metal ionsLindner, J.K.N. et al. | 2001
- 331
-
Formation of nanoclusters in Au-implanted bismuth telluriteKling, A. et al. | 2001
- 335
-
The effects of implantation temperature on He bubble formation in siliconda Silva, D.L. et al. | 2001
- 340
-
Gettering centres in high-energy ion-implanted silicon investigated by point defect recombinationKögler, R. et al. | 2001
- 345
-
Microstructural changes in silicon thermal oxide induced by high-flux copper negative-ion implantationAmekura, H. et al. | 2001
- 350
-
Anisotropic deformation of colloidal particles under MeV ion irradiationvan Dillen, T. et al. | 2001
- 357
-
Strain relaxation of pseudomorphic Si1-xGex-Si(100) heterostructures after hydrogen or helium ion implantation for virtual substrate fabricationHolländer, B. et al. | 2001
- 368
-
Ion surface treatments on organic materialsIwaki, Masaya et al. | 2001
- 375
-
Beam-induced magnetic property modifications: Basics, nanostructure fabrication and potential applicationsDevolder, T. et al. | 2001
- 382
-
Determination of solid-state sulfidation mechanisms in ion-implanted copperBarbour, J.C. et al. | 2001
- 388
-
Applications of disorder-induced melting concept to critical-solute-accumulation processesLam, N.Q. et al. | 2001
- 394
-
Defect evolution and characterization in He-implanted LiNbO3Kling, A. et al. | 2001
- 398
-
On the behaviour of enhanced mixing in metal-ceramic interfacesNagel, R. et al. | 2001
- 403
-
Modification of stainless steel and aluminium with pulsed energetic ion beams in the millisecond regimeHeyden, D. et al. | 2001
- 410
-
Influence of post-implantation thermal and laser annealing on the stability of metal-alloy nanoclusters in silicaBattaglin, G. et al. | 2001
- 417
-
Phase transformation induced in pure zirconia by high energy heavy ion irradiationBenyagoub, A. et al. | 2001
- 422
-
Photoluminescence from Si nanocrystals in silica: The effect of hydrogenCheylan, S. et al. | 2001
- 426
-
Co-irradiation effects of intense heavy ions and photons on surface modification of insulatorsKishimoto, N. et al. | 2001
- 432
-
Nucleation and growth behavior of Cu-Al precipitates in He implanted and annealed aluminumFeldmann, G. et al. | 2001
- 437
-
Degradation of polyimide by 100 keV He+, Ne+, Ar+ and Kr+ ionsHnatowicz, V. et al. | 2001
- 442
-
Germanium implantation into amorphous carbon filmsJacobsohn, L.G. et al. | 2001
- 448
-
Phase transformations in nitrogen-implanted iron layersJagielski, J. et al. | 2001
- 453
-
Lattice location of Cs atoms in cubic ZrO2 single crystalsThomé, L. et al. | 2001
- 458
-
Giant segregation effect and surface mechanical modification of aluminum alloys by oxygen plasma source ion implantationBolduc, M. et al. | 2001
- 463
-
Optical transient resonance of copper nanoparticle composites synthesized by negative ion implantationTakeda, Y. et al. | 2001
- 468
-
Formation of Ge nanowires in oxidized silicon V-grooves by ion beam synthesisMüller, T. et al. | 2001
- 474
-
High pressure annealing of defects induced by ion implantation on graphiteSoares, S.R.S. et al. | 2001
- 479
-
Magnetic properties of Co and Ni based alloy nanoparticles dispersed in a silica matrixde Julián Fernández, C. et al. | 2001
- 485
-
Solid-state reaction in Fe-V multilayers by ion beam mixing with thermal annealingBorges, J.F.M. et al. | 2001
- 490
-
Optical properties of Ir2+-implanted silica glassCheang-Wong, J.C. et al. | 2001
- 495
-
Optical absorption and emission studies of 2 MeV Cu-implanted silica glassOliver, A. et al. | 2001
- 500
-
Study of new surface structures created on sapphire by Co ion implantationMarques, C. et al. | 2001
- 505
-
Enhanced adhesion between polycarbonate substrates and tin-doped indium oxide films by ion-assisted reactionCho, Jun-Sik et al. | 2001
- 511
-
The effects of Ar post-bombardment and heat treatment on hardness of N implanted ironFoerster, C.E. et al. | 2001
- 516
-
Precursory stage of damage production in argon irradiated cubic zirconiaFradin, J. et al. | 2001
- 521
-
Grain growth in Zr-Fe multilayers under in situ ion irradiationMotta, A.T. et al. | 2001
- 526
-
Point defect energetics in the ZrNi and Zr2Ni intermetallicsMoura, C.S. et al. | 2001
- 532
-
Densification of glassy carbon by fluorine ion implantationToida, Hiroshi et al. | 2001
- 537
-
Ti:sapphire formation via the co-implantation of Ti and O ions into sapphireMorpeth, L.D. et al. | 2001
- 542
-
Hydrophilic group formation and cell culturing on polystyrene Petri-dish modified by ion-assisted reactionKim, Ki-Hwan et al. | 2001
- 548
-
Metallic nanoparticles formed in polyimide by ion implantationKobayashi, Tomohiro et al. | 2001
- 554
-
Carbon diffusion and nanocrystalline diamond formation in carbon ion-implanted oxides studied by nuclear elastic scatteringOrwa, J.O. et al. | 2001
- 559
-
Memory effect on ion beam-induced depolymerization of PMMACompagnini, G. et al. | 2001
- 564
-
Filters with <100 nm radius pores for gas separation formed by high-energy ion irradiation of polymersSudowe, R. et al. | 2001
- 569
-
Heteroepitaxial SiC films grown in Si by CH4 plasma immersion ion implantation: Conditions and mechanisms of their formationVolz, K. et al. | 2001
- 575
-
Pitting corrosion of aluminium coated with amorphous carbon films by argon ion beam assisted deposition at low process temperatureLensch, O. et al. | 2001
- 580
-
Annealing effects on luminescence from Ce-implanted a-Al2O3Aono, Keiko et al. | 2001
- 585
-
Temperature and angular effects on the channelled implantation of Er into Si<111>Hogg, S.M. et al. | 2001
- 590
-
Heavy-ion induced damage in fluorite nanopowderBoccanfuso, M. et al. | 2001
- 594
-
The effect of N+ ion energy on the properties of ion bombarded plasma polymer filmsRangel, Elidiane C. et al. | 2001
- 599
-
Annealing of chromium oxycarbide coatings deposited by plasma immersion ion processing (PIIP) for aluminum die castingPeters, A.M. et al. | 2001
- 605
-
Study of ion beam induced depolymerization using positron annihilation techniquesPuglisi, O. et al. | 2001
- 610
-
Damage accumulation and recovery in gold-ion-irradiated barium titanateJiang, W. et al. | 2001
- 615
-
Ion irradiation-induced amorphization of two GeO2 polymorphsWang, S.X. et al. | 2001
- 620
-
Microhardness characterization of multilayers modified by ion beam mixingBlando, Eduardo et al. | 2001
- 626
-
TiN structural modifications induced by bias voltage in a new dynamic controlled magnetron sputtering apparatusTentardini, E.K. et al. | 2001
- 630
-
Ion beam mixing of Ti-TiN multilayers for tribological and corrosion protectionHübler, Roberto et al. | 2001
- 637
-
Physical and optical characterisation of Ge-implanted silicaDowd, A. et al. | 2001
- 641
-
Nano-scale elastic property changes of ion-implanted graphiteOgiso, Hisato et al. | 2001
- 647
-
Characterization of mechanical properties and microstructure of high-energy dual ion implanted metalsTaniguchi, S. et al. | 2001
- 652
-
Optical property changes of silica glass and sapphire induced by Cu and O implantationIkeyama, M. et al. | 2001
- 658
-
Determination of ion incidence angles in plasma immersion ion implantation by means of a hollow multi-aperture targetGalonska, M. et al. | 2001
- 663
-
Surface smoothening and compaction of silica glass under dynamic negative ion mixingOkubo, N. et al. | 2001
- 668
-
Mechanical properties of He irradiated and annealed AZ-1350 JTM filmsLepienski, C.M. et al. | 2001
- 673
-
Nanoscratch testing of C60 thin films irradiated with N ionsLopes, J.M.J. et al. | 2001
- 678
-
Ion beam synthesis of gallium nitrideKench, P.J. et al. | 2001
- 683
-
Examination of the metastable and stable pitting corrosion of aluminum modified with carbon by ion beam techniquesLensch, O. et al. | 2001
- 688
-
Intrinsic residual stresses in metal films synthesized by energetic particle depositionMisra, A. et al. | 2001
- 694
-
Low energy nitrogen implantation into Si and SiO2-SiKrug, C. et al. | 2001
- 699
-
Surface modifications in diamond-like carbon films submitted to low-energy nitrogen ion bombardmentCastañeda, S.I. et al. | 2001
- 705
-
Isotope-beam modification of materials at eV energiesKrug, C. et al. | 2001
- 711
-
Layer splitting in Si by H+He ion co-implantation: Channeling effect limitation at low energyQian, C. et al. | 2001
- 715
-
High dose nitrogen and carbon shallow implantation in Si by plasma immersion ion implantationUeda, M. et al. | 2001
- 721
-
The effect of ion bombardment on the properties of TiOx films deposited by a modified ion-assisted PECVD techniqueda Cruz, Nilson C. et al. | 2001
- 726
-
Ion beam analysis of plasma nitrided Ti6Al4V-ELIJavorsky, C.S. et al. | 2001
- 732
-
Surface modification of porous polymeric membranes by RF-plasma treatmentCastro Vidaurre, E.F. et al. | 2001
- 737
-
Annealing behaviour of foreign atom incorporated Co-silicides formed by MEVVA implantation into SiO2-Si and Si3N4-Si structuresZhang, Yanwen et al. | 2001
- 744
-
A role for ion implantation in quantum computingJamieson, David N. et al. | 2001
- 751
-
Carrier activation in in situ Si-doped GaAs layers fabricated by a focused Si ion beam and molecular beam epitaxy combined systemHada, Takuo et al. | 2001
- 756
-
Large area IBAD deposition of Zn-alloys in the coil coating modeWolf, G.K. et al. | 2001
- 762
-
Ion beams as analytical tools in the thermal growth of ultrathin silicon oxide filmsda Rosa, E.B.O. et al. | 2001
- 767
-
Alloying of Pd into Ti by pulsed plasma beamsWerner, Z. et al. | 2001
- 772
-
New compact design for an ion sourceHuck, H. et al. | 2001
- 777
-
Fabrication of micromechanical structures on substrates selectively etched using a micropatterned ion-implantation methodNakano, Shizuka et al. | 2001
- 782
-
Electrical and optical effects of He+ ion irradiation in InGaP-GaAs-InGaAs lasersDanilov, I. et al. | 2001
- 787
-
Light element analysis using ERDA method with an ionization chamberAdded, N. et al. | 2001
- 791
-
Plasma protein adsorption onto cell attachment controlled ion implanted collagenKurotobi, K. et al. | 2001
- 797
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Antimony implanted in silicon - A thin layer reference material for surface analysisEcker, K.H. et al. | 2001
- 802
-
Author index| 2001
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EditorialBehar, Moni et al. | 2001
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Contents| 2001