Self-assembly patterning of epitaxial CoSi2 wires (English)
- New search for: Kluth, P.
- New search for: Kluth, P.
- New search for: Zhao, Q.T.
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In:
Microelectronic engineering
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60
, 1
; 239-246
;
2002
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ISSN:
- Article (Journal) / Print
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Title:Self-assembly patterning of epitaxial CoSi2 wires
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Contributors:
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Published in:Microelectronic engineering ; 60, 1 ; 239-246
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Publisher:
- New search for: Elsevier
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Place of publication:Amsterdam [u.a.]
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Publication date:2002
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ISSN:
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ZDBID:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
- New search for: 535/5670
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Keywords:
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Classification:
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Source:
Table of contents – Volume 60, Issue 1
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
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Preface| 2002
- 3
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An efficient DC-gain matched balanced truncation realization for VLSI interconnect circuit order reductionZeng, Xuan et al. | 2002
- 17
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Stresses in thin films and interconnect linesGudmundson, P. et al. | 2002
- 31
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Highly accurate closed form approximation for frequency-dependent line impedance of a lossy silicon substrate IC interconnectYmeri, H. et al. | 2002
- 39
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Application of combined thermal and electrical simulation for optimization of deep submicron interconnection systemsStreiter, R. et al. | 2002
- 51
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Electromigration resistance of sputtered silver lines using different patterning techniquesHauder, M. et al. | 2002
- 59
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Enhancement of ALCVDtrade TiN growth on Si-O-C and a-SiC:H films by O2-based plasma treatmentsSatta, A. et al. | 2002
- 59
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Enhancement of ALCVD TiN growth on Si-O-C and a-SiC:H films by O2-based plasma treatmentsSatta, A. / Baklanov, M. / Richard, O. / Vantomme, A. / Bender, H. / Conard, T. / Maex, K. / Li, W. M. / Elers, K. E. / Haukka, S. et al. | 2002
- 71
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Tantalum carbide and nitride diffusion barriers for Cu metallisationLaurila, T. et al. | 2002
- 81
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Correlation between microstructure control, density and diffusion barrier properties of TiN(O) filmsAlberti, A. et al. | 2002
- 89
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Copper alloy formation and film properties after annealing of Al-Cu stacks in different ambientsChen, Zhitao et al. | 2002
- 97
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Stress control of sputter-deposited Mo-N films for micromechanical applicationsKattelus, H. et al. | 2002
- 107
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Electronic transport in Ru-Si-O and Ir-Si-O amorphous thin filmsGottlieb, U. et al. | 2002
- 113
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Integration of fluorine-doped silicon oxide in copper pilot line for 0.12-mm technologyReynard, J. P. / Verove, C. / Sabouret, E. / Motte, P. / Descouts, B. / Chaton, C. / Michailos, J. / Barla, K. et al. | 2002
- 113
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Integration of fluorine-doped silicon oxide in copper pilot line for 0.12-(micro)m technologyReynard, J.P. et al. | 2002
- 119
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Integration of copper with an organic low-k dielectric in 0.12-(micro)m node interconnectFayolle, M. et al. | 2002
- 119
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Integration of copper with an organic low-k dielectric in 0.12-mm node interconnectFayolle, M. / Passemard, G. / Assous, M. / Louis, D. / Beverina, A. / Gobil, Y. / Cluzel, J. / Arnaud, L. et al. | 2002
- 125
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Use of a capacitance voltage technique to study copper drift diffusion in (porous) inorganic low-k materialsLanckmans, F. et al. | 2002
- 133
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Comparison of techniques to characterise the density, porosity and elastic modulus of porous low-k SiO2 xerogel filmsMurray, C. et al. | 2002
- 143
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Optimization of CVD dielectric process to achieve reliable ultra low-k air gapsArnal, Vincent et al. | 2002
- 149
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Effect of dopants on chemical mechanical polishing of siliconForsberg, M. et al. | 2002
- 157
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NiSi salicide technology for scaled CMOSIwai, Hiroshi et al. | 2002
- 171
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Enhanced stability of Ni monosilicide on MOSFETs poly-Si gate stackLee, P.S. et al. | 2002
- 183
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Nanometer patterning of epitaxial CoSi2 on silicon-on-insulator substratesZhao, Q.T. et al. | 2002
- 191
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MBE-growth of a Ge-CoSi2-Si heterostructure for vertical metal-semiconductor-metal photodetectorsWinnerl, S. et al. | 2002
- 197
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Effects of a Ta interlayer on the titanium silicide reaction: C40 formation and scalability of the TiSi2 processLa Via, F. et al. | 2002
- 205
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Luminescence lifetime of the 1.5-mm emission of b-FeSi2 precipitate layers in siliconSchuller, B. / Carius, R. / Lenk, S. / Mantl, S. et al. | 2002
- 205
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Luminescence lifetime of the 1.5-(micro)m emission of b-FeSi2 precipitate layers in siliconSchuller, B. et al. | 2002
- 211
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Effects of substrate bias and temperature during titanium sputter-deposition on the phase formation in TiSi2Lundqvist, N. et al. | 2002
- 221
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Study of CoSi2 formation from a Co-Ni alloyChamirian, O. et al. | 2002
- 231
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Initial reactions in Ti-Si(Mo) bilayersCocchi, R. et al. | 2002
- 239
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Self-assembly patterning of epitaxial CoSi2 wiresKluth, P. et al. | 2002
- 247
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Electron microscopic investigation of MnSi1.7 layers on Si(001)Mogilatenko, A. et al. | 2002
- 255
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Surfactant mediated growth of silicidesTeichert, S. et al. | 2002
- 261
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Low resistivity ohmic contacts on 4H-silicon carbide for high power and high temperature device applicationsLee, S.-K. et al. | 2002
- 269
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Structural and electrical characterisation of titanium and nickel silicide contacts on silicon carbideLa Via, F. et al. | 2002
- 283
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Diffusion and electrical activity of copper in Si1-x-yGexCy alloysHattab, A. et al. | 2002
- 289
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Author Index Volume 60, Numbers 1-2| 2002
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Committees| 2002