Yield point and dislocation velocity of diamond and zincblende semiconductors in different temperature (English)
- New search for: Siethoff, Hans
- New search for: Siethoff, Hans
In:
The philosophical magazine <London> / A
;
82
, 7
; 1299-1316
;
2002
-
ISSN:
- Article (Journal) / Print
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Title:Yield point and dislocation velocity of diamond and zincblende semiconductors in different temperature
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Contributors:Siethoff, Hans ( author )
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Published in:The philosophical magazine <London> / A ; 82, 7 ; 1299-1316
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Publisher:
- New search for: Taylor & Francis
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Place of publication:London
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Publication date:2002
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ISSN:
-
ZDBID:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
- New search for: 51.00 / 33.60
- Further information on Basic classification
- New search for: 275/3475
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Keywords:
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Classification:
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Source:
Table of contents – Volume 82, Issue 7
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1271
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Mesoscopic simulation of two-dimensional grain growth with anisotropic grain-boundary propertiesMoldovan, D. / Wolf, D. / Phillpot, S. R. / Haslam, A. J. et al. | 2002
- 1299
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Yield point and dislocation velocity of diamond and zincblende semiconductors in different temperature regimesSiethoff, Hans et al. | 2002
- 1299
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Yield point and dislocation velocity of diamond and zincblende semiconductors in different temperatureSiethoff, Hans et al. | 2002
- 1317
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Rearrangement of fatigue dislocation structure in copper single crystals associated with reduction in the plastic strain amplitudeWatanabe, C. / Kanmuri, K. / Kato, M. / Onaka, S. / Fujii, T. et al. | 2002
- 1331
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Oriented domains in a thin film of La0.8Sr0.2MnO3 prepared by laser molecular-beam epitaxyMa, X. L. / Zhu, Y. L. / Meng, X. M. / Lu, H. B. / Chen, F. / Chen, Z. H. / Yang, G. Z. / Zhang, Z. et al. | 2002
- 1345
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Influence of interstitial elements on the bulk modulus and theoretical strength of alpha -titanium: a first-principles studySong, Y. / Guo, Z.X. et al. | 2002
- 1345
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Influence of interstitial elements on the bulk modulus and theoretical strength of a-titanium: A first-principles studySong, Y. / Guo, Z. X. / Yang, R. et al. | 2002
- 1361
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Electron microscopy investigation of the defect configuration in CdSe/ZnSe quantum dot structuresLitvinov, D. / Rosenauer, A. / Gerthsen, D. / Preis, H. et al. | 2002
- 1381
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Slip transfer of deformation twins in duplex gamma -based Ti-Al alloys. III. Transfer across general large-angle gamma - gamma grain boundariesGibson, M.A. / Forwood, C.T. et al. | 2002
- 1381
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Slip transfer of deformation twins in duplex g -based Ti-Al alloys Part III. Transfer across general large-angle g g grain boundariesGibson, M.A. et al. | 2002
- 1381
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Slip transfer of deformation twins in duplex y-based Ti-Al alloys: Part III. Transfer across general large-angle γ-γ grain boundariesGibson, M. A. / Forwood, C. T. et al. | 2002
- 1405
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The effects of film-substrate mismatch on Pr0.7Ca0.3MnO3 thin filmsMaclaren, I. / Wang, Z. L. / Wang, H. S. / Li, Q. et al. | 2002
- 1419
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Hardening of rhombohedral twinning in sapphire ( alpha -Al2O3) by basal slip dislocationsCastaing, J. / Munoz, A. / Dominguez Rodriguez, A. et al. | 2002
- 1419
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Hardening of rhombohedral twinning in sapphire (a-Al2O3) by basal slip dislocationsCastaing, J. et al. | 2002
- 1419
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Hardening of rhombohedral twinning in sapphire (α-Al2O3) by basal slip dislocationsCastaing, J. / Muñoz, A. / Rodriguez, A. Dominguez et al. | 2002
- 1433
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Structure of martensite in sputter-deposited Ti-Ni thin films containing homogeneously distributed Ti2Ni precipitatesZhang, J. X. / Sato, M. / Ishida, A. et al. | 2002