Collection asymmetry in a drift-driven p-i-n solar cell (Unknown)
- New search for: Asensi, J.M.
- New search for: Asensi, J.M.
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In:
Journal of non-crystalline solids
;
299
, 1
; 1142-1146
;
2002
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ISSN:
- Article (Journal) / Print
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Title:Collection asymmetry in a drift-driven p-i-n solar cell
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Contributors:
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Published in:Journal of non-crystalline solids ; 299, 1 ; 1142-1146
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Publisher:
- New search for: North-Holland Publ. Co.
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Place of publication:Amsterdam
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Publication date:2002
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ISSN:
-
ZDBID:
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Type of media:Article (Journal)
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Type of material:Print
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Language:Unknown
- New search for: 51.45 / 51.60 / 33.61 / 35.90
- Further information on Basic classification
- New search for: 535/3475
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Keywords:
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Classification:
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Source:
Table of contents – Volume 299, Issue 1
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 715
-
Effects of selective Si ion implantation on excimer laser annealing of dehydrogenated a-Si filmLee, Min-Cheol et al. | 2002
- 721
-
Excimer laser recrystallization of selectively floating a-Si thin filmKim, Cheon-Hong et al. | 2002
- 726
-
Properties of grain boundaries in laser-crystallized silicon thin filmsEisele, C. et al. | 2002
- 731
-
Pulsed laser crystallization of amorphous silicon for polysilicon flat panel imagersBoyce, J.B. et al. | 2002
- 736
-
Comparison between the crystallization processes by laser and furnace annealing of pure and doped a-Si:HBeserman, R. et al. | 2002
- 741
-
Aluminum-induced crystallization of amorphous siliconGall, S. et al. | 2002
- 746
-
Rapid crystallization of silicon films using pulsed current-induced joule heatingSameshima, T. et al. | 2002
- 751
-
The effect of post-treatments on crystallization in a-Si:H-a-SiNx:H multilayersWang, Li et al. | 2002
- 756
-
Optoelectronic characterization of microcrystalline silicon filmsKunst, M. et al. | 2002
- 761
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Transition from amorphous to microcrystalline Si:H: effects of substrate temperature and hydrogen dilutionRay, S. et al. | 2002
- 767
-
Role of grains in protocrystalline silicon layers grown at very low substrate temperatures and studied by atomic force microscopyMates, T. et al. | 2002
- 772
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Changes in electric and optical properties of intrinsic microcrystalline silicon upon variation of the structural compositionVetterl, O. et al. | 2002
- 778
-
Stress characterization of undoped and doped laser crystallized poly-Si on different substrates using Raman spectroscopyLengsfeld, Philipp et al. | 2002
- 783
-
Defect formation and crystallization in a-Si:H induced by Si+ implantationGolikova, O.A. et al. | 2002
- 788
-
Crystallization of amorphous GaAs films prepared onto different substratesCampomanes, R.R. et al. | 2002
- 793
-
Novel amorphization process in silicon induced by electron irradiationYamasaki, J. et al. | 2002
- 798
-
Properties and prospects for non-crystalline carbonsRobertson, John et al. | 2002
- 805
-
EXAFS study of noble gases implanted in highly stressed amorphous carbon filmsLacerda, R.G. et al. | 2002
- 810
-
X-ray and HRTEM structural studies of bulk nanoporous carbon materials produced from carbidesSmorgonskaya, E. et al. | 2002
- 815
-
Study of the lithium diffusion in nanoporous carbon materials produced from carbidesKotina, I.M. et al. | 2002
- 820
-
The phase composition of the lithiated samples of nanoporous carbon materials produced from carbidesKotina, I.M. et al. | 2002
- 824
-
Time development during growth and relaxation of amorphous carbon films. Tight-binding molecular dynamics studyKohary, K. et al. | 2002
- 830
-
New preparation method of diamond like carbon - the layer-by-layer methodKatsuno, T. et al. | 2002
- 835
-
Some properties of sputtered a-C:HLazar, G. et al. | 2002
- 840
-
Low-temperature investigation of paramagnetic centres in tetrahedral amorphous carbon deposited by S-bend FCVAFanchini, G. et al. | 2002
- 846
-
Paramagnetic properties and hydrogen-related structural relaxation effects in magnetron-sputtered a-C:H thin filmsFanchini, G. et al. | 2002
- 852
-
Composite character of the photoluminescence in hydrogenated amorphous carbon filmsKoos, M. et al. | 2002
- 858
-
Density of states and s-p mixing in hydrogenated amorphous carbon filmsFanchini, G. et al. | 2002
- 864
-
High stability of emission current for a new carbon nanostructure filmLim, Sung Hoon et al. | 2002
- 868
-
Carbon nanotubes and a-C films simultaneously fabricated by thermal CVDYokomichi, H. et al. | 2002
- 874
-
Incorporation of nitrogen in carbon nanotubesDroppa, R. et al. | 2002
- 880
-
Influence of different carbon source gases on preparation and properties of a-Si1-XCX:H alloy films including (micro)c-Si:H by hot-wire CVDItoh, T. et al. | 2002
- 885
-
Microstructural characterization of hard hydrogenated amorphous silicon-carbon alloysCamargo, S.S. et al. | 2002
- 891
-
Structural characterization of a-Si:C:H alloys prepared by dc sputteringSaleh, R. et al. | 2002
- 896
-
Phase-pure a-SiC:H films prepared by closed chamber CVDKoynov, Svetoslav et al. | 2002
- 902
-
Reversible effects in IR absorption peaks of SiC:H, measured as a function of the temperatureMurri, Roberto et al. | 2002
- 907
-
Electronic properties of amorphous carbon nitride a-C1-xNx:H films investigated using vibrational and ESR characterisationsLacerda, M. et al. | 2002
- 912
-
Experimental study of surface electronic properties of ECR-PECVD deposited a-C1-xNx:H films using UPS, XPS and spectroscopic ellipsometryKildemo, M. et al. | 2002
- 917
-
Transient photodarkening in amorphous chalcogenidesGanjoo, Ashtosh et al. | 2002
- 924
-
Relaxation of photodarkening in amorphous As-Se films doped with metalsIovu, M.S. et al. | 2002
- 929
-
Anisotropic structural change induced by sub-bandgap light in As-S glasses studied by quasi-elastic light scatteringMatsuishi, Kiyoto et al. | 2002
- 935
-
The temperature dependence of photoinduced fluidity in chalcogenide glasses: a Raman spectroscopic studyKastrissios, D.Th et al. | 2002
- 940
-
Formation of a transient disordered state under bias illumination in a-As2Se3Kounavis, P. et al. | 2002
- 945
-
Photoinduced anisotropy of photoconductivity in chalcogenide amorphous filmsLyubin, V. et al. | 2002
- 949
-
Thickness effect of the photodarkening in amorphous chalcogenide filmsHayashi, Koji et al. | 2002
- 953
-
XPS studies of Cu incorporation in arsenic chalcogenidesGheorghiu-de La Rocque, Adriana et al. | 2002
- 958
-
Nuclear quadrupole resonance study of the glassy AsxSe1-x systemAhn, Eungho et al. | 2002
- 963
-
Evidence of nanophase separation in Ge-Se glassesWang, Yong et al. | 2002
- 968
-
Nanoscale electrical phase-change in GeSb2Te4 films with scanning probe microscopesGotoh, Tamihiro et al. | 2002
- 973
-
Low frequency Raman scattering of amorphous Ge1-xSx(0<=x<=0.62)Ogura, H. et al. | 2002
- 978
-
Amorphous As-S-Se semiconductor resists for holography and lithographyTeteris, J. et al. | 2002
- 983
-
Chalcogenide-glass microlenses for optical fibersSaitoh, Akira et al. | 2002
- 988
-
Progress in the science and technology of direct conversion a-Se X-ray sensorsKasap, S.O. et al. | 2002
- 993
-
X-ray induced effects in stabilized a-Se X-ray photoconductorsFogal, Bud et al. | 2002
- 998
-
Properties of a-SbxSe1-x photoconductorsTonchev, D. et al. | 2002
- 1002
-
Dynamics of photo-transport in a-As2Se3: ac loss approachShimakawa, K. et al. | 2002
- 1008
-
Effect of Sn doping on photoconductivity in amorphous As2Se3 and AsSe filmsIovu, M.S. et al. | 2002
- 1013
-
Thin amorphous chalcogenide films prepared by pulsed laser depositionNemec, P. et al. | 2002
- 1018
-
Synthesis and properties of Pr3+-doped Ge-Ga-Se glassesNemec, P. et al. | 2002
- 1023
-
Silver incorporation in Ge-Se glasses used in programmable metallization cell devicesMitkova, M. et al. | 2002
- 1028
-
The study of photo- and thermally-induced diffusion and dissolution of Ag in As30S70 amorphous films and its reaction productsWágner, T. et al. | 2002
- 1033
-
From one-dimensional organosilicon structures to polymeric semiconductors: optical and electrical propertiesNesp°urek, S. et al. | 2002
- 1042
-
Polycrystalline pentacene thin films for large area electronic applicationsKnipp, D. et al. | 2002
- 1047
-
Equilibrium carrier mobility in disordered organic semiconductorsArkhipov, V.I. et al. | 2002
- 1052
-
Time-resolved photoluminescence study of organic polysilane-silica hybrid thin filmsKobayashi, A. et al. | 2002
- 1057
-
Optical properties of new aliphatic-aromatic co-polyimidesJarzabek, B. et al. | 2002
- 1062
-
Three-dimensional ordered silicon-based nanostructures in opal matrix: preparation and photonic propertiesGolubev, V.G. et al. | 2002
- 1070
-
Fabrication of a-Si:H-nc-Si multilayer films using layer by layer technique and their propertiesAfanasjev, V.P. et al. | 2002
- 1075
-
Size controlled nc-Si synthesis by SiO-SiO2 superlatticesHeitmann, J. et al. | 2002
- 1079
-
Fabrication of Ge nanocrystals in SiO2 films by ion implantation: control of size and positionMasuda, Kaori et al. | 2002
- 1084
-
Photoelectric properties of printed thin films of silicon nanocrystals dispersed in polymer binderAndo, M. et al. | 2002
- 1090
-
Nano-oxidation of an amorphous silicon surface with an atomic force microscopeUmezu, I. et al. | 2002
- 1095
-
Visible photoluminescence and quantum confinement effects in amorphous Si-SiO2 multilayer structuresNihonyanagi, Satoshi et al. | 2002
- 1100
-
Formation of CdS nanocrystals in SiO2 by ion implantationDesnica, U.V. et al. | 2002
- 1105
-
Quantum confinement in CdSe nanocrystallitesAndersen, K.E. et al. | 2002
- 1111
-
Thin-film electroluminescence device utilizing ZnS:Mn nanocrystals as emission layerToyama, Toshihiko et al. | 2002
- 1116
-
Amorphous silicon solar cells deposited at high growth rateNishimoto, Tomonori et al. | 2002
- 1123
-
Effects of gas depletion on dc plasma deposited, a-Si single junction p-i-n solar cells with i-layers deposited at 10 °A-sGanguly, G. et al. | 2002
- 1127
-
Growth and properties of low bandgap amorphous (Si,Ge) alloy materials and devicesDalal, Vikram L. et al. | 2002
- 1131
-
Improvement in the spectral response at long wavelength of a-SiGe:H solar cells by exponential band gap design of the i-layerJimenez Zambrano, R. et al. | 2002
- 1136
-
Mobility gap profiles in Si:H intrinsic layers prepared by H2-dilution of SiH4: effects on the performance of p-i-n solar cellsKoval, R.J. et al. | 2002
- 1142
-
Collection asymmetry in a drift-driven p-i-n solar cellAsensi, J.M. et al. | 2002
- 1147
-
Improvement of the efficiency of the silicon solar cells by silicon incorporated diamond-like carbon antireflective coatingsBursiková, V. et al. | 2002
- 1152
-
Influence of substrate texture on microstructure and photovoltaic performances of thin film polycrystalline silicon solar cellsMatsui, Takuya et al. | 2002
- 1157
-
Origins of silicon solar cell passivation by SiNx:H annealBoehme, Christoph et al. | 2002
- 1162
-
Infrared modulation spectroscopy of interfaces in amorphous silicon solar cellsZhu, Kai et al. | 2002
- 1167
-
Cross-section of Si:H solar cells prepared by PECVD at the edge of crystallizationEdelman, F. et al. | 2002
- 1173
-
Metastability study and optimization of polymorphous silicon solar cells: the state-of-the-artPoissant, Y. et al. | 2002
- 1179
-
Transport properties of hot-wire CVD (micro)c-Si:H layers for solar cellsNiikura, C. et al. | 2002
- 1184
-
Influence of grain environment on open circuit voltage of hot-wire chemical vapour deposited Si:H solar cellsvan Veenendaal, P.A.T.T. et al. | 2002
- 1189
-
Growth of microcrystalline nip Si solar cells: role of local epitaxyHouben, L. et al. | 2002
- 1194
-
a-Si:H-poly-Si tandem cells deposited by hot-wire CVDvan Veen, M.K. et al. | 2002
- 1198
-
Amorphous silicon-crystalline silicon heterojunctions for solar cellsKunst, M. et al. | 2002
- 1203
-
Open circuit voltage in homojunction and heterojunction silicon solar cells grown by VHF-PECVDRizzoli, R. et al. | 2002
- 1208
-
Effect of rf power on the properties of ITO thin films deposited by plasma enhanced reactive thermal evaporation on unheated polymer substratesNunes de Carvalho, C. et al. | 2002
- 1213
-
Study of a-SiGe:H films and n-i-p devices used in high efficiency triple junction solar cellsAgarwal, Pratima et al. | 2002
- 1219
-
Influence of substrate on the microstructure of microcrystalline silicon layers and cellsBailat, J. et al. | 2002
- 1224
-
Thermal actuation of thin film microelectromechanical structuresGaspar, J. et al. | 2002
- 1229
-
Numerical and experimental study of a-Si:H based ultraviolet sensitive detectorsJankovec, Marko et al. | 2002
- 1234
-
a-Si:H photodiode technology for advanced CMOS active pixel sensor imagersTheil, Jeremy A. et al. | 2002
- 1240
-
Image sensors combining an organic photoconductor with a-Si:H matrix addressingStreet, R.A. et al. | 2002
- 1245
-
Image capture devices based on p-i-n silicon carbides for biometric applicationsVieira, M. et al. | 2002
- 1250
-
Active pixel sensor architectures for large area medical imagingKarim, Karim S. et al. | 2002
- 1256
-
Simulations of generation-recombination noise of n-i-n a-Si:H devices using AMPS-1DBakker, J.P.R. et al. | 2002
- 1261
-
Photocarrier response time scannerSchwarz, R. et al. | 2002
- 1267
-
Advances in amorphous silicon-based photonic technologyFortmann, C.M. et al. | 2002
- 1272
-
New insights on large area flexible position sensitive detectorsBrida, D. et al. | 2002
- 1277
-
Performance of a-Six:C1-x:H Schottky barrier and pin diodes used as position sensitive detectorsCabrita, A. et al. | 2002
- 1283
-
32 linear array position sensitive detector based on NIP and hetero a-Si:H microdevicesMartins, R. et al. | 2002
- 1289
-
a-Si:H interface optimisation for thin film position sensitive detectors produced on polymeric substratesPereira, L. et al. | 2002
- 1295
-
Examination of transient behaviour and design of dynamic SPICE model of a-Si:H PIN structureKrc, Janez et al. | 2002
- 1300
-
Low-cost chip-integrable silicon-based all-optical infrared light micromodulatorDella Corte, F.G. et al. | 2002
- 1304
-
New challenges in thin film transistor (TFT) researchSchropp, R.E.I. et al. | 2002
- 1311
-
Metal-ferroelectric thin film devicesKholkin, A.L. et al. | 2002
- 1316
-
CMOS polycrystalline silicon circuits on steel substratesWu, Ming et al. | 2002
- 1321
-
Characterization and control of defect states of polycrystalline silicon thin film transistor fabricated by laser crystallizationWatakabe, H. et al. | 2002
- 1326
-
Laser treatment of amorphous silicon junction field effect transistor channelCaputo, D. et al. | 2002
- 1330
-
Poly-Si thin film transistors fabricated by combining excimer laser annealing and metal induced lateral crystallizationPark, Kee-Chan et al. | 2002
- 1335
-
Jet-printed fabrication of a-Si:H thin-film transistors and arraysWong, W.S. et al. | 2002
- 1340
-
Amorphous-silicon thin-film transistors deposited by VHF-PECVD and hot-wire CVDStannowski, B. et al. | 2002
- 1345
-
Thin-film transistors with polymorphous silicon active layerVoz, C. et al. | 2002
- 1351
-
Hydrogenated amorphous silicon thin-film transistor using APC alloy for both gate and data bus linesLee, Sang Wook et al. | 2002
- 1355
-
Amorphous Si TFTs on plastically deformed spherical domesHsu, P.I. et al. | 2002
- 1360
-
Dielectric performance of low temperature silicon nitride films in a-Si:H TFTsSazonov, Andrei et al. | 2002
- 1365
-
Design of an a-Si:H(n)-GaAs(p)-GaAs(n) high-gain heterojunction bipolar transistor with 10 GHz cut-off frequencyDella Corte, F.G. et al. | 2002
- 1371
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Author index Parts A and B| 2002
- 1391
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Subject index Parts A and B| 2002
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Contents (Parts A and B)| 2002