Studies on grain boundaries in nanocrystalline silicon grown by hot-wire CVD (Unknown)
- New search for: Fonrodona, M.
- New search for: Fonrodona, M.
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In:
Journal of non-crystalline solids
;
299
; 14-19
;
2002
-
ISSN:
- Article (Journal) / Print
-
Title:Studies on grain boundaries in nanocrystalline silicon grown by hot-wire CVD
-
Contributors:
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Published in:Journal of non-crystalline solids ; 299 ; 14-19
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Publisher:
- New search for: North-Holland Publ. Co.
-
Place of publication:Amsterdam
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Publication date:2002
-
ISSN:
-
ZDBID:
-
Type of media:Article (Journal)
-
Type of material:Print
-
Language:Unknown
- New search for: 51.45 / 51.60 / 33.61 / 35.90
- Further information on Basic classification
- New search for: 535/3475
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Keywords:
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Source:
Table of contents – Volume 299
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
-
Hydrogen and semiconductors: from surface to bulk and backLey, Lothar et al. | 2002
- 2
-
Amorphous silicon films and solar cells deposited by HWCVD at ultra-high deposition ratesMahan, A.H. et al. | 2002
- 9
-
Effects of atomic hydrogen in gas phase on a-Si:H and poly-Si growth by catalytic CVDUmemoto, Hironobu et al. | 2002
- 14
-
Studies on grain boundaries in nanocrystalline silicon grown by hot-wire CVDFonrodona, M. et al. | 2002
- 20
-
Effect of deuterium on the growth process of poly-silicon film by hot-wire chemical vapour depositionRath, J.K. et al. | 2002
- 25
-
Chemical kinetics for film growth in silicon HWCVDTonokura, Kenichi et al. | 2002
- 30
-
The properties of a-Si:H films deposited on Mylar substrates by hot-wire plasma assisted techniqueFerreira, Isabel et al. | 2002
- 36
-
Simulations of the gas flux distribution for different gas showers and filament geometries on the large-area deposition of amorphous silicon by hot-wire CVDPfluger, A. et al. | 2002
- 42
-
Complex dynamics during the reactive scattering of Si+ (2P) and H2Chaâbane, Nihed et al. | 2002
- 48
-
Binding and surface diffusion of SiH3 radicals on a growing a-Si:H surfaceDewarrat, R. et al. | 2002
- 53
-
Use of real-time ion-mass spectrometry and discharge voltage trending for analysis of a-Si DC plasma CVD processesGanguly, G. et al. | 2002
- 58
-
Time-resolved layer thickness behavior of microcrystalline and amorphous silicon samples after switching on a hydrogen-silane VHF plasmaTerasa, R. et al. | 2002
- 63
-
Ion bombardment effects on the microcrystalline silicon growth mechanisms and structureKalache, B. et al. | 2002
- 68
-
Phase diagrams for Si:H film growth by plasma-enhanced chemical vapor depositionFerlauto, A.S. et al. | 2002
- 74
-
Mechanism of argon treatment on a growing surface in layer-by-layer deposition of hydrogenated amorphous siliconBiebericher, A.C.W. et al. | 2002
- 79
-
Deposition of microcrystalline silicon solar cells via the pulsed PECVD techniqueDas, Ujjwal K. et al. | 2002
- 83
-
Growth of large-grain poly-Si by FE-SMCKim, Kyung Ho et al. | 2002
- 87
-
Evolution of the surface roughness with the hydrogen partial pressure for high deposition rate of nanocrystalline silicon filmsLeconte, Y. et al. | 2002
- 93
-
Growth of microcrystalline silicon films using deuterium dilutionSuzuki, S. et al. | 2002
- 98
-
Fast deposition of microcrystalline silicon with an expanding thermal plasmaSmit, C. et al. | 2002
- 103
-
Influence of growth temperature on the microcrystallinity and native defect structure of hydrogenated amorphous siliconHärting, M. et al. | 2002
- 108
-
Low-temperature fabrication of microcrystalline silicon and its application to solar cellsKondo, Michio et al. | 2002
- 113
-
Fluorine and hydrogen effects on the growth and transport properties of microcrystalline silicon from SiF4 precursorKasouit, S. et al. | 2002
- 118
-
Direct formation of crystalline silicon films on an amorphous substrate from chlorinated materials by plasma-enhanced chemical vapor depositionShirai, Hajime et al. | 2002
- 123
-
Properties of Si:H thin films deposited by rf-PECVD of silane-argon mixtures with variation of the plasma conditionRay, Partha Pratim et al. | 2002
- 128
-
Crystalline silicon films grown by pulsed dc magnetron sputteringReinig, Peter et al. | 2002
- 133
-
Structural, optical and electrical properties of mc-Si:H deposited by ECRMars, M. / Fathallah, M. / Tresso, E. / Ferrero, S. et al. | 2002
- 133
-
Structural, optical and electrical properties of (micro)c-Si:H deposited by ECRMars, M. et al. | 2002
- 137
-
Pulsed laser crystallization and structuring of a-Ge on GaAsSantos, Paulo V. et al. | 2002
- 143
-
Microscopic mechanisms behind the Al-induced crystallization of a-Ge:H filmsChambouleyron, I. et al. | 2002
- 148
-
Growth and characterization of microcrystalline silicon-germanium filmsMiyazaki, S. et al. | 2002
- 153
-
Electronic properties of microcrystalline SiGe-thin films by Hall-experiments and photo- and dark-transportBauer, G.H. et al. | 2002
- 158
-
Structural and optoelectronic properties of microcrystalline silicon germaniumKrause, M. et al. | 2002
- 163
-
Low temperature poly-SixGe1-x deposited by reactive thermal CVD for thin film transistor applicationZhang, J.J. et al. | 2002
- 168
-
The effect of substrate temperature on HW-CVD deposited a-SiGe:H filmsJadkar, S.R. et al. | 2002
- 174
-
Ab initio calculations of a vacancy in a Ge nano-cluster and its passivation with atomic and molecular hydrogenGozzo, F.C. et al. | 2002
- 179
-
Temperature dependence of the photoconductivity of arsenic-doped hydrogenated amorphous germanium thin filmsReis, F.T. et al. | 2002
- 185
-
Fast hydrogen diffusion in hydrogenated amorphous silicon observed by in situ ESRYamasaki, S. et al. | 2002
- 191
-
Fermi-level dependence of the charge state of diffusing hydrogen in amorphous siliconBranz, Howard M. et al. | 2002
- 196
-
Etching and hydrogen diffusion mechanisms during a hydrogen plasma treatment of silicon thin filmsFontcuberta-i-Morral, A. et al. | 2002
- 201
-
Energetics of the forms of hydrogen and hydrogen diffusion in realistic models of a-Si:HFedders, P.A. et al. | 2002
- 205
-
Interstitial molecular hydrogen and deuterium in PECVD and HW amorphous siliconBorzi, R. et al. | 2002
- 210
-
Spectral dependence of vibrational lifetime of Si-H stretching band in a-Si:HOheda, Hidetoshi et al. | 2002
- 215
-
FTIR phase-modulated ellipsometry measurements of microcrystalline silicon films deposited by hot-wire CVDGarcia-Caurel, E. et al. | 2002
- 220
-
Hydrogen related bonding structure in hydrogenated polymorphous and microcrystalline siliconVignoli, S. et al. | 2002
- 226
-
Hydrogen bonding in laser-crystallized poly-SiHeise, H. et al. | 2002
- 231
-
Amorphous morphology, thermal stability and electronic structure of non-crystalline transition-metal elemental and binary oxides, and chalcogenidesLucovsky, Gerald et al. | 2002
- 238
-
Studies of short-range ordering in amorphous In-Se films by EXAFSJablonska, A. et al. | 2002
- 243
-
Towards the chemically specific structure of amorphous materials: anomalous X-ray scattering from a molybdenum-germanium alloyIshii, Hope et al. | 2002
- 249
-
Positron states in hydrogenated amorphous siliconBritton, D.T. et al. | 2002
- 254
-
Helium effusion, diffusion and precipitation as a probe of microstructure in hydrogenated amorphous siliconBeyer, W. et al. | 2002
- 259
-
Ab initio generation of amorphous semiconducting structures. The case of a-SiAlvarez, Fernando et al. | 2002
- 265
-
Are the triangles and the squares possible local atomic arrangements in the structure of amorphous silicon?Várallyay, Z. et al. | 2002
- 269
-
On the structure of semiconducting amorphous systemsBarzola-Quiquia, J. et al. | 2002
- 274
-
Relationships between structure, spin density and electronic transport in `solar-grade' microcrystalline silicon filmsBaia Neto, A.L. et al. | 2002
- 280
-
Measurement of stress gradients in hydrogenated microcrystalline silicon thin films using Raman spectroscopyPaillard, Vincent et al. | 2002
- 284
-
Structure of plasma-deposited polymorphous siliconFontcuberta-i-Morral, A. et al. | 2002
- 290
-
Optical transitions in silicon nanocrystals near structural transition region to amorphous siliconToyama, Toshihiko et al. | 2002
- 295
-
Modifications of the optical parameters of silicon thin films due to light scatteringSládek, Petr et al. | 2002
- 300
-
Universal distribution of optically excited carriers in tetrahedral amorphous semiconductorsTaylor, P.C. et al. | 2002
- 305
-
Charge carrier photogeneration yield in amorphous materials with long-range potential fluctuationsEmelianova, E.V. et al. | 2002
- 310
-
Measurement of the thermo-optic coefficient of a-Si:H at the wavelength of 1500 nm from room temperature to 200 (degree)CCocorullo, G. et al. | 2002
- 314
-
Linear thermal expansion coefficients of amorphous and microcrystalline silicon filmsTakimoto, K. et al. | 2002
- 318
-
Study of the pinhole density in a-Ge:H and a-Ge0.9Si0.1:H thin filmsChampi, A. et al. | 2002
- 323
-
X-ray photoelectron spectroscopy of amorphous AlN alloys prepared by reactive rf sputteringRibeiro, C.T.M. et al. | 2002
- 328
-
Urbach energy parameter of flash evaporated amorphous gallium arsenide filmsDias da Silva, J.H. et al. | 2002
- 333
-
Variable range hopping revisited: the case of an exponential distribution of localized statesGodet, C. et al. | 2002
- 339
-
Photoconductivity of macroscopically inhomogeneous amorphous semiconductors: case example for a-Si:HShimakawa, K. et al. | 2002
- 346
-
Universal frequency-dependent electronic conductivity near the mobility edgeOkamoto, Hiroaki et al. | 2002
- 350
-
An ESR study of bandtail states in phosphorus doped microcrystalline siliconLips, K. et al. | 2002
- 355
-
Model of transport in microcrystalline siliconKocka, J. et al. | 2002
- 360
-
Influence of combined AFM-current measurement on local electronic properties of silicon thin filmsRezek, B. et al. | 2002
- 365
-
Electronic transport in microcrystalline silicon controlled by trapping and intra-grain mobilityVanderhaghen, R. et al. | 2002
- 370
-
Pump-probe pulse transient photoconductivity study in amorphous and microcrystalline Si:HStradins, P. et al. | 2002
- 375
-
Features of charge carrier transport determined from carrier extraction current in (micro)c-Si:HJuska, G. et al. | 2002
- 375
-
Features of charge carrier transport determined from carrier extraction current in mc-Si:HJuska, G. / Arlauskas, K. / Nekrasas, N. / Stuchlik, J. / Niquille, X. / Wyrsch, N. et al. | 2002
- 380
-
Barrier-limited carrier transport in highly n-doped mc-Si:H thin filmsWeis, T. / Brehme, S. / Kanschat, P. / Fuhs, W. / Lipperheide, R. / Wille, U. et al. | 2002
- 380
-
Barrier-limited carrier transport in highly n-doped (micro)c-Si:H thin filmsWeis, T. et al. | 2002
- 385
-
Transport mechanism of microcrystalline silicon thin filmsLiu, F. et al. | 2002
- 390
-
Effect of the microstructure on the electronic transport in hydrogenated microcrystalline siliconWyrsch, N. et al. | 2002
- 395
-
Importance of the transport isotropy in mc-Si:H thin films for solar cells deposited at low substrate temperaturesSvrcek, V. / Fejfar, A. / Fojtik, P. / Mates, T. / Poruba, A. / Stuchla, H. / Pelant, I. / Kocka, J. / Nasuno, Y. / Kondo, M. et al. | 2002
- 395
-
Importance of the transport isotropy in (micro)c-Si:H thin films for solar cells deposited at low substrate temperaturesSvrcek, V. et al. | 2002
- 400
-
Electronic transport in low temperature nanocrystalline silicon thin-film transistors obtained by hot-wire CVDPuigdollers, J. et al. | 2002
- 405
-
Modification of the tunneling barrier in a nanocrystalline silicon single-electron transistorKamiya, T. et al. | 2002
- 411
-
Investigations of the electron transport behavior in microcrystalline Si filmsRam, Sanjay K. et al. | 2002
- 416
-
Electronic transport in disordered organic and inorganic semiconductorsBaranovskii, S.D. et al. | 2002
- 420
-
Time-of-flight photocurrents in expanding-thermal-plasma-deposited a-Si:HBrinza, M. et al. | 2002
- 425
-
Conductance fluctuations in undoped hydrogenated amorphous silicon-germanium alloy thin filmsGünes, Mehmet et al. | 2002
- 430
-
Origin of lateral photovoltage in hydrogenated amorphous silicon and silicon germanium thin filmsSrivastava, Alok et al. | 2002
- 434
-
Electronic transport in low-temperature silicon nitrideAlpuim, P. et al. | 2002
- 439
-
Simulation of transient transport in amorphous multilayersPicos-Vega, A. et al. | 2002
- 444
-
Effective mass of charge carriers in amorphous semiconductors and its applicationsSingh, Jai et al. | 2002
- 449
-
Insights into the mechanisms of light-induced degradation from studies of defects in low Ge fraction a-Si,Ge:H alloysCohen, J.David et al. | 2002
- 455
-
Light-induced defect creation under intense optical excitation in hydrogenated amorphous siliconMorigaki, K. et al. | 2002
- 460
-
Less-understood phenomena in the light-induced degradation and photocarrier capture in a-Si:HStradins, P. et al. | 2002
- 466
-
Photocarrier capture properties in a-Si:HShimizu, Satoshi et al. | 2002
- 471
-
Light-soaking and annealing kinetics of majority and minority carrier mobility-lifetime products in a-Si:HMorgado, E. et al. | 2002
- 476
-
Metastability in tritiated amorphous siliconZukotynski, S. et al. | 2002
- 482
-
Evolution with light-soaking of polymorphous material prepared at 423 KRoy, D. et al. | 2002
- 487
-
Light-induced effects in hydrogenated amorphous silicon films grown from high hydrogen dilution of silaneYoon, Jong-Hwan et al. | 2002
- 492
-
Defect creation kinetics in amorphous silicon thin film transistorsWehrspohn, R.B. et al. | 2002
- 497
-
Study of the stability of polycrystalline silicon by means of the behavior of thin film transistors under gate bias stressMohammed-Brahim, T. et al. | 2002
- 502
-
Metastable defect kinetics in microcrystalline siliconNickel, N.H. et al. | 2002
- 507
-
Defect kinetics in new model of metastability in a-Si:HBiswas, R. et al. | 2002
- 511
-
Influence of light-soaking and annealing on the microstructure of a-Si:H deposited at 423 KRoy, D. et al. | 2002
- 516
-
Photoinduced volume expansion and contraction in a-Si:H filmsYoshida, N. et al. | 2002
- 521
-
Light induced stress in a-Si1-xGex:H alloys and its correlation with the Staebler-Wronski effectSpanakis, E. et al. | 2002
- 525
-
Interpretation of photocurrent transients in amorphous semiconductorsMain, C. et al. | 2002
- 531
-
Phototransport spectroscopy of a-Si:H and (micro)c-Si:HBalberg, I. et al. | 2002
- 531
-
Phototransport spectroscopy of a-Si:H and mc-Si:HBalberg, I. et al. | 2002
- 536
-
Fourier transform infrared photocurrent spectroscopy in microcrystalline siliconPoruba, A. et al. | 2002
- 541
-
Probing localized states distributions in semiconductors by Laplace transform transient photocurrent spectroscopyGueorguieva, M.J. et al. | 2002
- 546
-
Tunneling-assisted thermalization and recombination of photocarriers in a-Si:HHattori, K. et al. | 2002
- 551
-
Comparison of transport and defects properties in hydrogenated polymorphous and amorphous siliconBronner, W. et al. | 2002
- 556
-
Nature of metastable and stable dangling bond defects in hydrogenated amorphous siliconPowell, M.J. et al. | 2002
- 561
-
Anisotropic magnetic centres in hydrogenated microcrystalline and polymorphous siliconMorigaki, K. et al. | 2002
- 566
-
Time-domain measurement of spin-dependent recombination in microcrystalline siliconBoehme, Christoph et al. | 2002
- 571
-
Recombination mechanism of excess carriers in hydrogenated amorphous germaniumMarques, F.C. et al. | 2002
- 575
-
In situ ESR observation of interface dangling bond formation processes during amorphous SiO2 growth on SiFutako, W. et al. | 2002
- 579
-
Dependence of the doping efficiency on material composition in n-type a-SiOx:HJanotta, A. et al. | 2002
- 585
-
Measurement of band tail widths in hydrogenated amorphous siliconRerbal, K. et al. | 2002
- 589
-
NMR probe of band tail states in a-Si:HSu, T. et al. | 2002
- 594
-
The influence of defects on response speed of high gain two-beam photogating in a-Si:H PIN structuresZollondz, J.-H. et al. | 2002
- 599
-
Reverse bias annealing of Schottky diodes: evidence for the lower defect density and better stability of polymorphous silicon compared to amorphous siliconKleider, J.P. et al. | 2002
- 605
-
On the doping mechanism of boron-doped hydrogenated amorphous silicon deposited by rf-co-sputteringde Lima, M.M. et al. | 2002
- 610
-
Bulk and surface defects in a-Si:H films studied by means of the cavity ring down absorption techniqueSmets, A.H.M. et al. | 2002
- 615
-
Defect-related absorption in hydrogenated silicon filmsGlobus, T. et al. | 2002
- 621
-
Defect transition energies and the density of electronic states in hydrogenated amorphous siliconMensing, G. et al. | 2002
- 626
-
Density of states in hydrogenated microcrystalline silicon determined by space charge limited currentsMeaudre, M. et al. | 2002
- 632
-
Influence of electron and proton irradiation on the electronic properties of microcrystalline siliconBrüggemann, R. et al. | 2002
- 637
-
Lifetime and intensity of photoluminescence after light induced creation of dangling bonds in a-Si:HOgihara, C. et al. | 2002
- 642
-
Photoluminescence lifetime distribution of a-Si:H and a-Ge:H expanded to nanosecond region using wide-band frequency-resolved spectroscopyAoki, T. et al. | 2002
- 648
-
Blue light emission in nc-Si-SiO2 multilayers fabricated using layer by layer plasma oxidationMa, Zhongyuan et al. | 2002
- 653
-
Luminescence properties of amorphous silicon-nitride-based optical microcavitiesGiorgis, F. et al. | 2002
- 658
-
Photoluminescence in laser-crystallized polycrystalline siliconBrendel, K. et al. | 2002
- 663
-
Interface recombination in heterojunctions of amorphous and crystalline siliconFroitzheim, A. et al. | 2002
- 668
-
Time-resolved photoluminescence of erbium centers in amorphous hydrogenated siliconKamenev, B.V. et al. | 2002
- 673
-
Erbium environment in silicon nanoparticlesTessler, Leandro R. et al. | 2002
- 678
-
Bright luminescence from erbium doped nc-Si-SiO2 superlatticesSchmidt, M. et al. | 2002
- 683
-
Optical and transport properties of magnetron-sputtered a-Si:H films doped with erbiumDimova-Malinovska, D. et al. | 2002
- 688
-
Er3+ luminescence in a-SiOx:HJanotta, A. et al. | 2002
- 694
-
a-Si:H-a-SiOx:H microcavities with a-Si(Er):H active layerDukin, A.A. et al. | 2002
- 699
-
Improvement of 1.54 mm luminescence in erbium-doped a-SiOx:H alloysTerukov, E. I. / Undalov, Y. K. / Kudoyarova, V. K. / Koughia, K. V. / Kleider, J. P. / Gueunier, M. E. / Meaudre, R. et al. | 2002
- 699
-
Improvement of 1.54 (micro)m luminescence in erbium-doped a-SiOx:H alloysTerukov, E.I. et al. | 2002
- 704
-
Donor formation in plasma-deposited amorphous silicon (a-Si:H) by erbium incorporationKazanskii, A.G. et al. | 2002
- 709
-
Blue, green and red emission from Ce3+, Tb3+ and Eu3+ ions in amorphous GaN and AlN thin filmsAldabergenova, S.B. et al. | 2002
- 715
-
Effects of selective Si ion implantation on excimer laser annealing of dehydrogenated a-Si filmLee, Min-Cheol et al. | 2002
- 721
-
Excimer laser recrystallization of selectively floating a-Si thin filmKim, Cheon-Hong et al. | 2002
- 726
-
Properties of grain boundaries in laser-crystallized silicon thin filmsEisele, C. et al. | 2002
- 731
-
Pulsed laser crystallization of amorphous silicon for polysilicon flat panel imagersBoyce, J.B. et al. | 2002
- 736
-
Comparison between the crystallization processes by laser and furnace annealing of pure and doped a-Si:HBeserman, R. et al. | 2002
- 741
-
Aluminum-induced crystallization of amorphous siliconGall, S. et al. | 2002
- 746
-
Rapid crystallization of silicon films using pulsed current-induced joule heatingSameshima, T. et al. | 2002
- 751
-
The effect of post-treatments on crystallization in a-Si:H-a-SiNx:H multilayersWang, Li et al. | 2002
- 756
-
Optoelectronic characterization of microcrystalline silicon filmsKunst, M. et al. | 2002
- 761
-
Transition from amorphous to microcrystalline Si:H: effects of substrate temperature and hydrogen dilutionRay, S. et al. | 2002
- 767
-
Role of grains in protocrystalline silicon layers grown at very low substrate temperatures and studied by atomic force microscopyMates, T. et al. | 2002
- 772
-
Changes in electric and optical properties of intrinsic microcrystalline silicon upon variation of the structural compositionVetterl, O. et al. | 2002
- 778
-
Stress characterization of undoped and doped laser crystallized poly-Si on different substrates using Raman spectroscopyLengsfeld, Philipp et al. | 2002
- 783
-
Defect formation and crystallization in a-Si:H induced by Si+ implantationGolikova, O.A. et al. | 2002
- 788
-
Crystallization of amorphous GaAs films prepared onto different substratesCampomanes, R.R. et al. | 2002
- 793
-
Novel amorphization process in silicon induced by electron irradiationYamasaki, J. et al. | 2002
- 798
-
Properties and prospects for non-crystalline carbonsRobertson, John et al. | 2002
- 805
-
EXAFS study of noble gases implanted in highly stressed amorphous carbon filmsLacerda, R.G. et al. | 2002
- 810
-
X-ray and HRTEM structural studies of bulk nanoporous carbon materials produced from carbidesSmorgonskaya, E. et al. | 2002
- 815
-
Study of the lithium diffusion in nanoporous carbon materials produced from carbidesKotina, I.M. et al. | 2002
- 820
-
The phase composition of the lithiated samples of nanoporous carbon materials produced from carbidesKotina, I.M. et al. | 2002
- 824
-
Time development during growth and relaxation of amorphous carbon films. Tight-binding molecular dynamics studyKohary, K. et al. | 2002
- 830
-
New preparation method of diamond like carbon - the layer-by-layer methodKatsuno, T. et al. | 2002
- 835
-
Some properties of sputtered a-C:HLazar, G. et al. | 2002
- 840
-
Low-temperature investigation of paramagnetic centres in tetrahedral amorphous carbon deposited by S-bend FCVAFanchini, G. et al. | 2002
- 846
-
Paramagnetic properties and hydrogen-related structural relaxation effects in magnetron-sputtered a-C:H thin filmsFanchini, G. et al. | 2002
- 852
-
Composite character of the photoluminescence in hydrogenated amorphous carbon filmsKoos, M. et al. | 2002
- 858
-
Density of states and s-p mixing in hydrogenated amorphous carbon filmsFanchini, G. et al. | 2002
- 858
-
Density of states and -p mixing in hydrogenated amorphous carbon filmsFanchini, G. / Paret, V. / Tagliaferro, A. / Theye, M. L. et al. | 2002
- 864
-
High stability of emission current for a new carbon nanostructure filmLim, Sung Hoon et al. | 2002
- 868
-
Carbon nanotubes and a-C films simultaneously fabricated by thermal CVDYokomichi, H. et al. | 2002
- 874
-
Incorporation of nitrogen in carbon nanotubesDroppa, R. et al. | 2002
- 880
-
Influence of different carbon source gases on preparation and properties of a-Si1-XCX:H alloy films including (micro)c-Si:H by hot-wire CVDItoh, T. et al. | 2002
- 880
-
Influence of different carbon source gases on preparation and properties of a-Si1-XCX:H alloy films including mc-Si:H by hot-wire CVDItoh, T. / Fujiwara, T. / Katoh, Y. / Fukunaga, K. / Nonomura, S. et al. | 2002
- 885
-
Microstructural characterization of hard hydrogenated amorphous silicon-carbon alloysCamargo, S.S. et al. | 2002
- 891
-
Structural characterization of a-Si:C:H alloys prepared by dc sputteringSaleh, R. et al. | 2002
- 896
-
Phase-pure a-SiC:H films prepared by closed chamber CVDKoynov, Svetoslav et al. | 2002
- 902
-
Reversible effects in IR absorption peaks of SiC:H, measured as a function of the temperatureMurri, Roberto et al. | 2002
- 907
-
Electronic properties of amorphous carbon nitride a-C1-xNx:H films investigated using vibrational and ESR characterisationsLacerda, M. et al. | 2002
- 912
-
Experimental study of surface electronic properties of ECR-PECVD deposited a-C1-xNx:H films using UPS, XPS and spectroscopic ellipsometryKildemo, M. et al. | 2002
- 917
-
Transient photodarkening in amorphous chalcogenidesGanjoo, Ashtosh et al. | 2002
- 924
-
Relaxation of photodarkening in amorphous As-Se films doped with metalsIovu, M.S. et al. | 2002
- 929
-
Anisotropic structural change induced by sub-bandgap light in As-S glasses studied by quasi-elastic light scatteringMatsuishi, Kiyoto et al. | 2002
- 935
-
The temperature dependence of photoinduced fluidity in chalcogenide glasses: a Raman spectroscopic studyKastrissios, D.Th et al. | 2002
- 940
-
Formation of a transient disordered state under bias illumination in a-As2Se3Kounavis, P. et al. | 2002
- 945
-
Photoinduced anisotropy of photoconductivity in chalcogenide amorphous filmsLyubin, V. et al. | 2002
- 949
-
Thickness effect of the photodarkening in amorphous chalcogenide filmsHayashi, Koji et al. | 2002
- 953
-
XPS studies of Cu incorporation in arsenic chalcogenidesGheorghiu-de La Rocque, Adriana et al. | 2002
- 958
-
Nuclear quadrupole resonance study of the glassy AsxSe1-x systemAhn, Eungho et al. | 2002
- 963
-
Evidence of nanophase separation in Ge-Se glassesWang, Yong et al. | 2002
- 968
-
Nanoscale electrical phase-change in GeSb2Te4 films with scanning probe microscopesGotoh, Tamihiro et al. | 2002
- 973
-
Low frequency Raman scattering of amorphous Ge1-xSx(0<=x<=0.62)Ogura, H. et al. | 2002
- 973
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Low frequency Raman scattering of amorphous Ge1-xSx(0x0.62)Ogura, H. / Matsuishi, K. / Onari, S. et al. | 2002
- 978
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Amorphous As-S-Se semiconductor resists for holography and lithographyTeteris, J. et al. | 2002
- 983
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Chalcogenide-glass microlenses for optical fibersSaitoh, Akira et al. | 2002
- 988
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Progress in the science and technology of direct conversion a-Se X-ray sensorsKasap, S.O. et al. | 2002
- 993
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X-ray induced effects in stabilized a-Se X-ray photoconductorsFogal, Bud et al. | 2002
- 998
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Properties of a-SbxSe1-x photoconductorsTonchev, D. et al. | 2002
- 1002
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Dynamics of photo-transport in a-As2Se3: ac loss approachShimakawa, K. et al. | 2002
- 1008
-
Effect of Sn doping on photoconductivity in amorphous As2Se3 and AsSe filmsIovu, M.S. et al. | 2002
- 1013
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Thin amorphous chalcogenide films prepared by pulsed laser depositionNemec, P. et al. | 2002
- 1018
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Synthesis and properties of Pr3+-doped Ge-Ga-Se glassesNemec, P. et al. | 2002
- 1023
-
Silver incorporation in Ge-Se glasses used in programmable metallization cell devicesMitkova, M. et al. | 2002
- 1028
-
The study of photo- and thermally-induced diffusion and dissolution of Ag in As30S70 amorphous films and its reaction productsWágner, T. et al. | 2002
- 1033
-
From one-dimensional organosilicon structures to polymeric semiconductors: optical and electrical propertiesNesp°urek, S. et al. | 2002
- 1042
-
Polycrystalline pentacene thin films for large area electronic applicationsKnipp, D. et al. | 2002
- 1047
-
Equilibrium carrier mobility in disordered organic semiconductorsArkhipov, V.I. et al. | 2002
- 1052
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Time-resolved photoluminescence study of organic polysilane-silica hybrid thin filmsKobayashi, A. et al. | 2002
- 1057
-
Optical properties of new aliphatic-aromatic co-polyimidesJarzabek, B. et al. | 2002
- 1062
-
Three-dimensional ordered silicon-based nanostructures in opal matrix: preparation and photonic propertiesGolubev, V.G. et al. | 2002
- 1070
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Fabrication of a-Si:H-nc-Si multilayer films using layer by layer technique and their propertiesAfanasjev, V.P. et al. | 2002
- 1075
-
Size controlled nc-Si synthesis by SiO-SiO2 superlatticesHeitmann, J. et al. | 2002
- 1079
-
Fabrication of Ge nanocrystals in SiO2 films by ion implantation: control of size and positionMasuda, Kaori et al. | 2002
- 1084
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Photoelectric properties of printed thin films of silicon nanocrystals dispersed in polymer binderAndo, M. et al. | 2002
- 1090
-
Nano-oxidation of an amorphous silicon surface with an atomic force microscopeUmezu, I. et al. | 2002
- 1095
-
Visible photoluminescence and quantum confinement effects in amorphous Si-SiO2 multilayer structuresNihonyanagi, Satoshi et al. | 2002
- 1100
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Formation of CdS nanocrystals in SiO2 by ion implantationDesnica, U. V. / Desnica-Frankovic, I. D. / Gamulin, O. / White, C. W. / Sonder, E. / Zuhr, R. A. et al. | 2002