Structures and electronic states of InAs (001) and (111)B surfaces passivated with sulfur studied by AES, LEED, UPS, XPS, and IPES (Unknown)
- New search for: Fukuda, Y.
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In:
Vacuum
;
67
, 1
; 37-42
;
2002
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ISSN:
- Article (Journal) / Print
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Title:Structures and electronic states of InAs (001) and (111)B surfaces passivated with sulfur studied by AES, LEED, UPS, XPS, and IPES
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Contributors:
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Published in:Vacuum ; 67, 1 ; 37-42
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Publisher:
- New search for: Elsevier Science
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Place of publication:Kidlington
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Publication date:2002
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ISSN:
-
ZDBID:
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Type of media:Article (Journal)
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Type of material:Print
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Language:Unknown
- New search for: 52.78 / 33.09 / 58.19
- Further information on Basic classification
- New search for: 275/3422
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Keywords:
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Classification:
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Source:
Table of contents – Volume 67, Issue 1
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
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Editorial(s)Szuber, J. et al. | 2002
- 1
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EditorialSzuber, Jacek et al. | 2002
- 3
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Rigorous analysis of photoluminescence efficiency for characterisation of electronic properties of InP(100) surfacesAdamowicz, B. et al. | 2002
- 11
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Surface passivation by dissociative molecular adsorptionSrivastava, G.P. et al. | 2002
- 21
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Adsorption of GeH2 on the bare and hydrogenated Ge(001) surfacesÇakmak, M. et al. | 2002
- 27
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Isotope effect in the adsorption of H and D on the Si(111) surface from electrolytesChikalova-Luzina, O.P. et al. | 2002
- 31
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Zn-induced features at the GaAs(110) surface: a first-principles studyFerraz, A.C. et al. | 2002
- 37
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Structures and electronic states of InAs (001) and (111)B surfaces passivated with sulfur studied by AES, LEED, UPS, XPS, and IPESFukuda, Y. et al. | 2002
- 43
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Modification of GaAs(100) and GaN(0001) surfaces by treatment in alcoholic sulfide solutionsKonenkova, Elena V. et al. | 2002
- 53
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XPS study of the surface Fermi level of (NH4)2Sx-passivated GaAs(100) surfaceSzuber, J. et al. | 2002
- 59
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Fermi-level pinning and passivation on the oxide-covered and bare silicon surfaces and interfacesMizsei, Janos et al. | 2002
- 69
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Thermal and plasma nitridation of GaSe crystalBalitskii, O.A. et al. | 2002
- 75
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Effect of methanol concentration on flatband potential shift of n-type Si in CH3CN-CH3OH mixture containing a redox coupleGabouze, N. et al. | 2002
- 81
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Electrical properties of sulfur-passivated III-V compound devicesEftekhari, G. et al. | 2002
- 91
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Surface preparation and effective contact formation for GaAs surfaceKang, Min-Gu et al. | 2002
- 101
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Tuning Schottky barrier heights by organic modification of metal-semiconductor contactsZahn, Dietrich R.T. et al. | 2002
- 115
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Photoelectron emission from heterojunctions with intralayers: band-offset changes vs. band-bending effectsHorn, K. et al. | 2002
- 125
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Study and characterization of the structures Au-Al2O3-Si and Au-Al0-Al2O3-SiGruzza, B. et al. | 2002
- 131
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Properties of semiconductor surfaces covered with very thin insulating overlayers prepared by impacts of low-energy particlesPincik, E. et al. | 2002
- 143
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Surface and bulk values of real part of refractive index of GaSeKepinska, M. et al. | 2002
- 149
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About an influence of Ar ion beam of very low energy on a-Si:H propertiesKopáni, M. et al. | 2002
- 155
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Investigation on the interface formation of ambient-pressure-dried SiO2 aerogel film deposited on GaAsPark, Sung-Woo et al. | 2002
- 161
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Characteristics of interfacial bonding distribution of Gd2O3-GaAs structureYang, Jun-Kyu et al. | 2002