Si(1 1 1) step fluctuations in reflection electron microscopy at 1100 (degree)C: anomalous step-step repulsion (English)
- New search for: Schroll, Robert D.
- New search for: Schroll, Robert D.
- New search for: Cohen, Saul D.
- New search for: Einstein, T.L.
- New search for: Métois, J.-J.
- New search for: Gebremariam, Hailu
- New search for: Richards, Howard L.
- New search for: Williams, Ellen D.
In:
Applied surface science
;
212
, 1
; 219-223
;
2003
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ISSN:
- Article (Journal) / Print
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Title:Si(1 1 1) step fluctuations in reflection electron microscopy at 1100 (degree)C: anomalous step-step repulsion
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Contributors:Schroll, Robert D. ( author ) / Cohen, Saul D. / Einstein, T.L. / Métois, J.-J. / Gebremariam, Hailu / Richards, Howard L. / Williams, Ellen D.
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Published in:Applied surface science ; 212, 1 ; 219-223
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Publisher:
- New search for: Elsevier
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Place of publication:Amsterdam [u.a.]
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Publication date:2003
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ISSN:
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ZDBID:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
- New search for: 52.78 / 35.18 / 33.68
- Further information on Basic classification
- New search for: 535/3485
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Keywords:
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Source:
Table of contents – Volume 212, Issue 1
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
-
In memoriam| 2003
- 2
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Acknowledgements| 2003
- 3
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PrefaceAufray, B. et al. | 2003
- 4
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Passivation of metal carbide surfaces: relevance to carbon nanotube-metal interconnectionsOudghiri-Hassani, H. et al. | 2003
- 10
-
Surface states resonance on In-terminated InAs(0 0 1)4 x 2-c(8 x 2) clean surfaceDe Padova, P. et al. | 2003
- 17
-
Atomic structure and magnetic properties of Mn on InAs(100)Hricovini, K. et al. | 2003
- 26
-
Effect of end-substitution of hexyl chains on the growth and electrical properties of quaterthiophene thin filmsAckermann, J. et al. | 2003
- 33
-
Interplay between surface and electronic structures in epitaxial Ag ultra thin films on Cu(111)Bendounan, A. et al. | 2003
- 38
-
Thermo-coloration of SmS thin flims by XPS in situ observationMori, Y. et al. | 2003
- 43
-
Structural transitions at the surface of the decagonal quasicrystal Al-Co-NiFlückiger, T. et al. | 2003
- 47
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Potassium assembled on the InAs(1 1 0) surface: from nanowires to two-dimensional layersGavioli, Luca et al. | 2003
- 52
-
Temperature-dependent interaction of C60 with Ge(1 1 1)-c(2 x 8)Bertoni, G. et al. | 2003
- 57
-
Molecular orientation of C60 on Pt(111) determined by X-ray photoelectron diffractionGiovanelli, L. et al. | 2003
- 62
-
Matrix element effects on the Fermi surface mapping by angle resolved photoemission from Bi2Sr2CaCu2O8+x superconductorsRoca, L. et al. | 2003
- 67
-
Shadow bands at the Fermi surface of Bi2Sr2CaCu2O8+x superconductors: structural or antiferromagnetic origin?Izquierdo, M. et al. | 2003
- 73
-
Direct observation of localized unoccupied states by synchrotron radiation two-color resonant photoemissionHsiao, H.L. et al. | 2003
- 78
-
Surface particularities in pulsed laser ablation-deposition of the ferromagnetic alloy NiMnSbGrigorescu, C.E.A. et al. | 2003
- 85
-
Structure properties of nanostructured Fe films grown on c(2 x 2) N-Cu(1 0 0) self-organised surfaceFinetti, P. et al. | 2003
- 92
-
Surface fracture of glassy materials as detected by real-time atomic force microscopy (AFM) experimentsCélarié, F. et al. | 2003
- 97
-
Surface XPS core-level shifts of FeS2Mattila, S. et al. | 2003
- 101
-
Atomic and electronic structures of heteroepitaxial C60 film grown on Ni(1 1 1), Cu(1 1 1)Kiguchi, Manabu et al. | 2003
- 105
-
STM and STS on single dopants and Au-induced chains at the Si(1 1 1) surfaceSürgers, C. et al. | 2003
- 110
-
Investigations of Cd1-xMnxTe crystals by means of ellipsometry and Auger electron spectroscopyWronkowska, A.A. et al. | 2003
- 116
-
Expression of the optical constants of chalcogenide thin films using the new parameterization dispersion modelFranta, Daniel et al. | 2003
- 122
-
Luminescent properties of single quantum well of CdTe on ZnTe grown by hot-wall epitaxyYoneyama, Y. et al. | 2003
- 127
-
Optical manifestation of magnetoexcitons in near-surface quantum wellsFlores-Desirena, B. et al. | 2003
- 131
-
Sb-Si(1 1 0) 2x3-a photoelectron diffraction studySchürmann, M. et al. | 2003
- 135
-
Atomic structure and formation process of the Si(1 1 1)-Sb((bent radical)7 x (bent radical)7) surface phaseGruznev, D. et al. | 2003
- 140
-
Spectroscopic multiple angle reflection and transmission ellipsometry of aggregated gold filmsTruong, Vo-Van et al. | 2003
- 146
-
Structure of Ga-stabilized GaAs(0 0 1) surfaces at high temperaturesOhtake, Akihiro et al. | 2003
- 151
-
Study of the (0 0 1) cleavage planes of guanidinium methanesulfonate single crystals by AFM and He diffractionBracco, Gianangelo et al. | 2003
- 157
-
Inelastic electron analysis in reflection high-energy electron diffraction conditionNakahara, H. et al. | 2003
- 162
-
Emission of lights of various colors from p-CdS:Cu-n-CdS thin-film diodesKashiwaba, Yasube et al. | 2003
- 166
-
Thermal magnetic properties of Fe films on Cu3Au investigated by magneto optical Kerr effectBisio, F. et al. | 2003
- 171
-
Interdiffusion and magnetism in Ni-Cu multilayersMeunier, A. et al. | 2003
- 177
-
Vapor phase techniques for the fabrication of homoepitaxial layers of silicon carbide: process modeling and characterizationPons, M. et al. | 2003
- 184
-
Control in the initial growth stage of heteroepitaxial Si1-x-yGexCy on Si(0 0 1) substratesZaima, Shigeaki et al. | 2003
- 193
-
Si epitaxial growth on SiH3CH3 reacted Ge(1 0 0) and intermixing between Si and Ge during heat treatmentTakahashi, Kazuya et al. | 2003
- 197
-
Si atomic layer-by-layer epitaxial growth process using alternate exposure of Si(1 0 0) to SiH4 and to Ar plasmaSakuraba, Masao et al. | 2003
- 201
-
Investigation of interface roughness and roughness correlation in solid-state multilayer by coplanar diffuse X-ray scatteringBusch, Ingo et al. | 2003
- 204
-
Effects of As+-implantation on the formation of iron silicides in Fe thin films on (1 1 1)SiLu, H.T. et al. | 2003
- 209
-
Work function of impurity-doped polycrystalline Si1-x-yGexCy film deposited by ultraclean low-pressure CVDShim, Hyunyoung et al. | 2003
- 213
-
Ag island nucleation on Ge(1 1 1)-c(2 x 8)Padovani, M. et al. | 2003
- 219
-
Si(1 1 1) step fluctuations in reflection electron microscopy at 1100 (degree)C: anomalous step-step repulsionSchroll, Robert D. et al. | 2003
- 224
-
Mg deposition on Ag(1 0 0): temperature evolution of the structural and electronic propertiesMoroni, R. et al. | 2003
- 230
-
Some evidences of ordering in InGaP layers grown by liquid phase epitaxyPrutskij, T.A. et al. | 2003
- 235
-
The growth of silver films on Si(1 1 1)-(7 x 7) studied by using photoelectron diffractionPérez-Dieste, V. et al. | 2003
- 244
-
Equilibrium surface segregation enthalpy of Ge in concentrated amorphous SiGe alloysNyéki, J. et al. | 2003
- 249
-
Surface electromigration of In-covered Si high-index surfacesSakamoto, K. et al. | 2003
- 255
-
Preparation and characterization of polycrystalline anatase and rutile TiO2 thin films by rf magnetron sputteringMiao, L. et al. | 2003
- 264
-
An XPD and LEED study of highly strained ultrathin Ni films on Pd(1 0 0)Petukhov, M. et al. | 2003
- 267
-
Growth of Zn1-xMnxTe films on GaAs(1 0 0) by hot-wall epitaxyKuwabara, H. et al. | 2003
- 271
-
Electrolytic co-deposition of a nickel-fluorographite composite layer on polycrystalline copperPlumier, F. et al. | 2003
- 279
-
Fabrication and characterization of metal and semiconductor SmS thin films by rf-dc dual magnetron sputteringTanemura, S. et al. | 2003
- 287
-
Growth of high quality silicon carbide films by bias enhanced low-pressure HFCVD using methaneGeorge, V.C. et al. | 2003
- 291
-
Growth and dissolution kinetics of Au-Pb(1 1 1): an AES-LEED studyOughaddou, H. et al. | 2003
- 296
-
Superlattices of self-assembled Ge-Si(0 0 1) quantum dotsLe Thanh, Vinh et al. | 2003
- 305
-
Zinc sulfide thin films deposited by RF reactive sputtering for photovoltaic applicationsShao, Le-Xi et al. | 2003
- 311
-
III-V nanoelectronics and related surface-interface issuesHasegawa, Hideki et al. | 2003
- 319
-
STM investigation of epitaxial Si growth for the fabrication of a Si-based quantum computerOberbeck, Lars et al. | 2003
- 325
-
Structural evolution in Ge+ implantation amorphous SiHe, J.H. et al. | 2003
- 329
-
Adsorption and decomposition of t-butylphosphine (TBP) on an InP(0 0 1)-(2 x 4)-c(2 x 8) surface studied by STM, TPD, and HREELSFukuda, Y. et al. | 2003
- 334
-
Ga-induced nano-facet formation on Si(1 1 n) surfacesNakahara, H. et al. | 2003
- 339
-
Auto-correlation function analysis of crystallization in amorphous SiGe thin filmsChiang, T.F. et al. | 2003
- 344
-
He diffraction study of the time decay of ripple structures on ion bombarded Ag(1 1 0)Pedemonte, L. et al. | 2003
- 349
-
Synthesis and laser processing of ZnO nanocrystalline thin filmsOzerov, I. et al. | 2003
- 353
-
Atomic structures of Ag-Ge(1 1 1) (bent radical)39 x (bent radical)39 and 6 x 6 surfaces studied by STM: observations of bias dependent reconstruction transformationsZhang, H.M. et al. | 2003
- 360
-
Temperature dependence of ordered cobalt nanodots growth on Au(7 8 8)Baudot, G. et al. | 2003
- 367
-
The role of microstructure in nanocrystalline conformal Co0.9W0.02P0.08 diffusion barriers for copper metallizationKohn, A. et al. | 2003
- 373
-
A structural analysis of Bi-Si(1 0 0) 2 x n surfaces by ICISSOishi, N. et al. | 2003
- 378
-
SiC nanofibers grown by high power microwave plasma chemical vapor depositionHonda, Shin-ichi et al. | 2003
- 383
-
Surface morphology and field emission characteristics of carbon nanofiber films grown by chemical vapor deposition on alloy catalystKamada, K. et al. | 2003
- 388
-
Silicon nitride deposited by ECR-CVD at room temperature for LOCOS isolation technologyPereira, Marcus A. et al. | 2003
- 393
-
Highly aligned carbon nanotube arrays fabricated by bias sputteringHayashi, Nobuyuki et al. | 2003
- 397
-
Presumption and improvement for gallium oxide thin film of high temperature oxygen sensorsOgita, M. et al. | 2003
- 402
-
Transparent ellipsometric memory with thin film multilayer structures - Optical memory based on the ellipsometric principleTazawa, Masato et al. | 2003
- 406
-
Si-LiG process for inductive meso systemsBarbaroto, Pedro R. et al. | 2003
- 411
-
Micro-patterning of self-supporting layers with conducting polymer wires for 3D-chip interconnection applicationsAckermann, J. et al. | 2003
- 417
-
Perylenes and phthalocyanines on GaAs(0 0 1) surfacesEvans, D.A. et al. | 2003
- 423
-
Transport gap of organic semiconductors in organic modified Schottky contactsZahn, Dietrich R.T. et al. | 2003
- 428
-
Time-resolved photoluminescence study of excitons in thin PTCDA films at various temperaturesKobitski, A.Yu et al. | 2003
- 433
-
Influence of substrate surfaces on the growth of organic filmsDas, A. et al. | 2003
- 438
-
Electronic structures of unoccupied states in lithium phthalocyanine thin films of different polymorphs studied by IPESSato, Naoki et al. | 2003
- 441
-
IRRAS and LEED studies of films of the long chain n-alkane n-C44H90 on Cu(1 0 0) and Cu(1 1 0)Hosoi, Yoshinobu et al. | 2003
- 446
-
Direct comparison of the electronic coupling efficiency of sulfur and selenium alligator clips for molecules adsorbed onto gold electrodesPatrone, L. et al. | 2003
- 452
-
Effect of the solvent on the formation of n-dodecanethiol films on a polycrystalline Ag90Ni10 substrateLaffineur, F. et al. | 2003
- 458
-
A discussion of conduction in organic light-emitting diodesMori, Tatsuo et al. | 2003
- 464
-
Self-assembly of (3-mercaptopropyl)trimethoxysilane on polycrystalline zinc substrates towards corrosion protectionSinapi, F. et al. | 2003
- 472
-
Electropolymerisation of poly(3,4-ethylene-dioxythiophene) on nickel substratesMekhalif, Z. et al. | 2003
- 481
-
Scanning tunneling microscopy of locally derivatized self-assembled organic monolayersBattaglini, N. et al. | 2003
- 485
-
Pseudogap structure in icosahedral ZnMgY and ZnMgHo quasicrystalsSuchodolskis, A. et al. | 2003
- 491
-
Investigation of gas-surface interactions at self-assembled silicon surfaces acting as gas sensorsNarducci, Dario et al. | 2003
- 497
-
Photoconductivity and oxygen adsorption of Cu-phthalocyanine thin films on cadmium sulphide surfacesKomolov, A.S. et al. | 2003
- 501
-
Orientation of perylene derivatives on semiconductor surfacesKampen, T.U. et al. | 2003
- 508
-
Reactions of iodobenzene on Pd(1 1 1) and Pd(1 1 0)von Schenck, H. et al. | 2003
- 515
-
Low-energy molecular exciton in indium-perylene-3,4,9,10-tetracarboxylic dianhydride system observed by electronic energy loss spectroscopyNakamura, Taisuke et al. | 2003
- 520
-
Raman analysis of first monolayers of PTCDA on Ag(111)Wagner, V. et al. | 2003
- 525
-
XPS study of irradiation damage and different metal-sulfur bonds in dodecanethiol monolayers on gold and platinum surfacesLaiho, T. et al. | 2003
- 530
-
Comparative study of the monolayers of CH3sbnd(CH2)nsbndSiCl3 and CH3sbnd(CH2)nsbndPO(OH)2, nPhilippin, G. et al. | 2003
- 537
-
Scanning tunneling microscopy study of pentacene adsorption on Ag-Si(1 1 1)-((bent radical)3 x (bent radical)3)R30(degree)Guaino, Ph et al. | 2003
- 542
-
Peculiar features in the electrical characteristics of CuPc based diodesPham, G. et al. | 2003
- 547
-
Chemical and electronic structure of SiO2-Si interfacial transition layerHattori, T. et al. | 2003
- 556
-
Characterization by ion beams of surfaces and interfaces of alternative materials for future microelectronic devicesKrug, C. et al. | 2003
- 563
-
Electronic structure of transition metal high-k dielectrics: interfacial band offset energies for microelectronic devicesLucovsky, Gerald et al. | 2003
- 570
-
Thermal growth of SiO2 on SiC investigated by isotopic tracing and subnanometric depth profilingRadtke, C. et al. | 2003
- 575
-
In situ observation of oxygen-induced anisotropic surface etching processes at 6H-SiC(0 0 0 1) by variable temperature scanning tunneling microscopeOkado, H. et al. | 2003
- 579
-
A metastable-induced electron spectroscopy study on the process of oxygen adsorption at a Ni(1 1 0) surfaceIkari, T. et al. | 2003
- 583
-
Photoluminescence properties of Tb3+ and Eu3+ ions hosted in TiO2 matrixConde-Gallardo, A. et al. | 2003
- 589
-
Interaction between oxygen and InAs(1 1 1) surfaces, influence of the electron accumulation layerLeandersson, K.Szamota et al. | 2003
- 595
-
Morphology changes of Si(0 0 1) surfaces during wet chemical halogenationPedemonte, Laura et al. | 2003
- 601
-
First stages of the InP(10 0) surfaces nitridation studied by AES, EELS and EPESPetit, M. et al. | 2003
- 607
-
Electrical characterization of charges in irradiated oxides by electrostatic force microscopy and Kelvin methodDongmo, H. et al. | 2003
- 614
-
Nitridation of GaAs(1 0 0) substrates and Ga-GaAs systems studied by XPS spectroscopyOuld-Metidji, Y. et al. | 2003
- 619
-
Generation of ammonia plasma using a helical antenna and nitridation of GaAs surfaceYasui, Kanji et al. | 2003
- 625
-
Initial oxynitridation of a Si(1 0 0) 2 x 1 surface by the annealing and low energy nitrogen ion exposureKim, Ki-Jeong et al. | 2003
- 630
-
Direct image observation of the initial forming of passive thin film on stainless steel surface by PEEMKang, Tai-Hee et al. | 2003
- 636
-
The influence of fluoride anions on the silicon carbide surface oxidation in aqueous solutionsSocha, R.P. et al. | 2003
- 644
-
Oxide formation and passivation for micro- and nano-electronic devicesBae, Choelhwyi et al. | 2003
- 649
-
On the re-oxidation of silicon(0 0 1) surfaces modified by self-assembled monolayersNarducci, Dario et al. | 2003
- 654
-
Optical properties of polycrystalline and epitaxial anatase and rutile TiO2 thin films by rf magnetron sputteringTanemura, S. et al. | 2003
- 661
-
Structural characterization of TiO2-TiNxOy (d-doping) heterostructures on (1 1 0)TiO2 substratesChiaramonte, T. et al. | 2003
- 667
-
EPES applied to the study of gold-alumina interfacesGruzza, B. et al. | 2003
- 674
-
Physico-chemistry and morphology of silicon surface during the first stage of alumina depositionJonnard, P. et al. | 2003
- 679
-
Contact resistivity between tungsten and impurity (P and B)-doped Si1-x-yGexCy epitaxial layerNoh, Jintae et al. | 2003
- 684
-
W delta doping in Si(1 0 0) using ultraclean low-pressure CVDKanaya, Toshiyuki et al. | 2003
- 689
-
Spectroscopic studies of TM-Si and TM-SiO2 interfacesJarrige, I. et al. | 2003
- 694
-
Electron induced epitaxy of cubic ZnS on GaAs(100) surfacesShimaoka, G. et al. | 2003
- 701
-
Metal induced gap states at LiCl-Cu(0 0 1) interface studied by X-ray absorption fine structureKiguchi, Manabu et al. | 2003
- 705
-
Dynamics of c(4 x 2) phase-transition in Si(1 0 0) surfacesNatori, A. et al. | 2003
- 711
-
c(4 x 8) periodicity in ultrathin iron silicides on Si(1 1 1)Garreau, G. et al. | 2003
- 715
-
Kinetics study of antimony adsorption on Si(111)Lapena, L. et al. | 2003
- 724
-
Structural stability of the Ge-Si(1 1 3)-2x2 surfaceNakamura, Jun et al. | 2003
- 730
-
Si c(4x4) structure appeared in the initial stage of 3C-SiC epitaxial growth on Si(0 0 1) using monomethylsilane and dimethylsilaneNarita, Yuzuru et al. | 2003
- 735
-
An investigation of sidewall adhesion in MEMSRobert Ashurst, W. et al. | 2003
- 742
-
Strain effects in device processing of silicon-on-insulator materialsCamassel, J. et al. | 2003
- 749
-
Model for defect generation at the (1 0 0)Si-SiO2 interface during electron injection in MOS structuresHoussa, M. et al. | 2003
- 753
-
Electron capture kinetics at AlF3-SiO2 interfacesThurzo, I. et al. | 2003
- 760
-
Formation of silicon nano-dots in luminescent silicon nitridePei, Zingway et al. | 2003
- 765
-
An innovative a-Si:H p-i-n based X-ray medical image detector for low dosage and long exposure applicationsFann, Sen-Shyong et al. | 2003
- 770
-
Chemical analysis and optical properties of metallic nanoclustersDownes, Andrew et al. | 2003
- 775
-
Formation and characterization of TiO2 thin films with application to a multifunctional heat mirrorJin, P. et al. | 2003
- 782
-
Surface-induced broadening and shift of exciton resonances in the thin film regimeAtenco-Analco, N. et al. | 2003
- 787
-
Auger electron spectroscopy determination of surface self-diffusion coefficients from growth of voids in thin deposited filmsBeszeda, I. et al. | 2003
- 792
-
Electropolymerized poly-4-vinylpyridine for removal of copper from wastewaterViel, P. et al. | 2003
- 797
-
Probing a molecular electronic transition by two-colour sum-frequency generation spectroscopyHumbert, C. et al. | 2003
- 804
-
SIMS characterization of hydrogen transport through SiO2 by low-temperature hydrogen annealingKawashima, Yoshiya et al. | 2003
- 809
-
New technique to characterise thin oxide films under electronic irradiationLiébault, J. et al. | 2003
- 815
-
Dependence of structural and luminescent characteristics of Y2O3:Er thin film phosphors on substrateNakanishi, Yoichiro et al. | 2003
- 820
-
Quantum structures in SiCBechstedt, F. et al. | 2003
- 826
-
Role of interface suboxide Si atoms on the electronic properties of Si-SiO2 superlatticesCarrier, P. et al. | 2003
- 829
-
Transport properties of magnetic atom bridges controlled by a scanning tunneling microscopeNakanishi, H. et al. | 2003
- 833
-
Segregation in ternary alloys: an interplay of driving forcesLuyten, J. et al. | 2003
- 839
-
Contributions to the infrared effective charges of oxides and chalcogenides from equilibrium charge and dynamic charge redistribution during normal mode motionsSremaniak, L.S. et al. | 2003
- 844
-
Modelling surface phenomena in PdsbndNi alloysHelfensteyn, S. et al. | 2003
- 850
-
Surface properties of chalcogen passivated GaAs(1 0 0)Kampen, T.U. et al. | 2003
- 856
-
Surface-state mediated three-adsorbate interaction: exact and numerical results and simple asymptotic expressionHyldgaard, Per et al. | 2003
- 861
-
Chalcogen passivation of GaAs(1 0 0) surfaces: theoretical studySzucs, B. et al. | 2003
- 866
-
Relation between surface stress and (1x2) reconstruction for (1 1 0) fcc transition metal surfacesOlivier, Stéphane et al. | 2003
- 872
-
Epitaxial growth of the pseudo-binary wide band gap semiconductor SiCAlNRoucka, R. et al. | 2003
- 879
-
Thermally induced changes in cluster-assembled carbon nanocluster films observed via photoelectron spectroscopyMagnano, E. et al. | 2003
- 885
-
Cathodoluminescence in-depth spectroscopy study of AlGaN-GaN heterostructuresIshikawa, Fumitaro et al. | 2003
- 890
-
Allowed combinations and overtones of vibrational modes in wurtzite GaNKunert, H.W. et al. | 2003
- 897
-
Influence of intermediate-temperature buffer layer on flicker noise characteristics of MBE-grown GaN thin films and devicesLeung, B.H. et al. | 2003
- 901
-
Surface and overgrowth analysis of the II-VI compound BeTeWagner, V. et al. | 2003
- 907
-
Ohmic contact to p-type GaN using a novel Ni-Cu schemeLiu, S.H. et al. | 2003
- 912
-
Comparison of classical and BEN nucleation studied on thinned Si (1 1 1) samples: a HRTEM studyArnault, J.C. et al. | 2003
- 920
-
3C-SiC thin epilayer formation at low temperature using ion beamsTsubouchi, Nobuteru et al. | 2003
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Subject Index| 2003
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Editorial Board| 2003
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Author Index| 2003