High stability of CdZnSSe active layers in ZnSe-based laser diodes by introducing strain-compensating barrier layers (English)
- New search for: Gust, Arne
- New search for: Gust, Arne
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In:
Physica status solidi / B
;
241
, 3
; 727-730
;
2004
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ISSN:
- Article (Journal) / Print
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Title:High stability of CdZnSSe active layers in ZnSe-based laser diodes by introducing strain-compensating barrier layers
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Contributors:
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Published in:Physica status solidi / B ; 241, 3 ; 727-730
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Publisher:
- New search for: Wiley-VCH
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Place of publication:Berlin
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Publication date:2004
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ISSN:
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ZDBID:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
- New search for: 33.60 / 33.60
- Further information on Basic classification
- New search for: 530.41
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Keywords:
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Source:
Table of contents – Volume 241, Issue 3
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 455
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Slow mode degradation mechanism of ZnSe based white LEDsAdachi, Masahiro / Ando, Koshi / Abe, Tomoki / Tsutsumi, Shigeyuki / Inoue, Noboru / Kasada, Hirofumi / Katayama, Koji / Nakamura, Takao et al. | 2004
- 463
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Growth by MBE and characterization of metastable group II sulphidesPrior, K. A. / Bradford, C. / David, L. / Tang, X. / Cavenett, B. C. et al. | 2004
- 471
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Characterization of heterostructures containing MnS grown by MBEDavid, L. / Tang, X. / Beamson, G. / Wolverson, D. / Prior, K. A. / Cavenett, B. C. et al. | 2004
- 475
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MBE growth and characterization of hexagonal ZnCdMgSe layers and ZnCdSe/ZnCdMgSe QW structures on GaAs (111) substratesSuzuki, S. / Kaifuchi, Y. / Kumada, H. / Ishitani, Y. / Yoshikawa, A. et al. | 2004
- 479
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Epitaxial growth and optical properties for ultraviolet regionof BeMgZnSe on GaP(001) substrateNiiyama, Yuuki / Yokoyama, Takeshi / Watanabe, Masahiro et al. | 2004
- 483
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Characterization of ZnCdSeTe/MgZnSeTe materials for ZnTe‐based visible optical devicesNomura, Ichirou / Ochiai, Yasutomo / Toyomura, Naobumi / Manoshiro, Asuka / Kikuchi, Akihiko / Kishino, Katsumi et al. | 2004
- 487
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Spin‐flip Raman scattering studies of antimony‐doped ZnSeDavies, J. J. / Wolverson, D. / Aliev, G. N. / Zeng, S. / Wang, J. F. / Isshiki, M. et al. | 2004
- 491
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Pressure measurements of TO‐phonon anharmonicity in isotopic ZnSTallman, R. E. / Ritter, T. M. / Weinstein, B. A. / Cantarero, A. / Serrano, J. / Lauck, R. / Cardona, M. et al. | 2004
- 495
-
Exciton localization in MgxZnyCd1−x−ySe alloyMaksimov, O. / Wang, W. H. / Samarth, N. / Muñoz, M. / Tamargo, M. C. et al. | 2004
- 499
-
X‐ray, photo‐ESR and optical spectroscopy studies of ZnSxSe1−x solid solutions doped with CoSurkova, T. P. / Galakhov, V. R. / Godlewski, M. / Świątek, K. et al. | 2004
- 503
-
Dynamical properties of atom‐like emissions from single localized states in ZnCdS ternary mesa‐shaped structuresKumano, H. / Hitaka, Y. / Suemune, I. et al. | 2004
- 507
-
Determination of the dielectric functions of MBE‐grown Zn1−xMgxTe II‐VI semiconductor alloysFranz, A. J. / Peiris, F. C. / Liu, X. / Bindley, U. / Furdyna, J. K. et al. | 2004
- 511
-
Optical and interface phonons of different kind in BeTe/ZnSe superlatticesReshina, I. I. / Ivanov, S. V. / Kosobukin, V. A. / Sorokin, S. V. / Toropov, A. A. et al. | 2004
- 515
-
Time resolved photoluminescence studies of Zn–Se–Te nanostructures with sub‐monolayer quantities of Te grown by molecular beam epitaxyGu, Y. / Kuskovsky, Igor L. / van der Voort, M. / Neumark, G. F. / Zhou, X. / Muñoz, M. / Tamargo, M. C. et al. | 2004
- 519
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ZnCdSe quantum structures by (110)‐cleaved‐edge overgrowth: MBE growth and μ‐PL characterizationTitova, L. V. / Cywiński, G. / Kutrowski, M. / Wojtowicz, T. / Liu, X. / Furdyna, J. K. / Dobrowolska, M. et al. | 2004
- 519
-
ZnCdSe quantum structures by (110)-cleaved-edge overgrowth: MBE growth and (micro)-PL characterizationTitova, L.V. et al. | 2004
- 523
-
Investigation of CdSe/ZnSSe quantum dot ordering by grazing incidence small angle X‐ray scatteringSchmidt, Th. / Clausen, T. / Falta, J. / Bernstorff, S. / Alexe, G. / Passow, T. / Hommel, D. et al. | 2004
- 527
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Quantum structures in Zn–Se–Te system containing submonolayer quantities of TeKuskovsky, Igor L. / Gu, Y. / van der Voort, M. / Neumark, G. F. / Zhou, X. / Muñoz, M. / Tamargo, M. C. et al. | 2004
- 531
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CdSe‐based nanostructures: growth, properties, lasersIvanov, S. V. / Toropov, A. A. / Shubina, T. V. / Sorokin, S. V. / Kyutt, R. N. / Sitnikova, A. A. / Solnyshkov, D. D. / Nekrutkina, O. V. et al. | 2004
- 538
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Giant polarized optical properties in type‐II ZnTe/CdSe multiple quantum wells induced by interface chemical bondsChen, Y. F. / Su, W. S. / Ya, M. H. / Chiu, Y. S. et al. | 2004
- 542
-
How to avoid non‐radiative escape of excitons from quantum dots?Robin, I. C. / André, R. / Dang, Le Si / Mariette, H. / Tatarenko, S. / Gérard, J. M. / Kheng, K. / Tinjod, F. / Bartels, M. / Lischka, K. et al. | 2004
- 546
-
Contactless electroreflectance studies of II–VI nanostructures grown by molecular beam epitaxyMuñoz, Martín / Lu, Hong / Guo, Shiping / Zhou, Xuecong / Tamargo, Maria C. / Pollak, Fred H. / Huang, Y. S. / Trallero‐Giner, C. / Rodríguez, A. H. et al. | 2004
- 550
-
Self‐assembled quantum dot formation induced by surface energy change of a strained two‐dimensional layerTinjod, Frank / Mariette, Henri et al. | 2004
- 558
-
Growth and characterization of ultra‐thin quantum wells of II–VI semiconductors for optoelectronic applicationsHernández‐Calderón, Isaac / García‐Rocha, Miguel / Díaz‐Arencibia, Pedro et al. | 2004
- 564
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Selected area growth of II–VI nanostructures using shadow masksSchallenberg, T. / Schumacher, C. / Brunner, K. / Molenkamp, L. W. et al. | 2004
- 568
-
Spin–lattice relaxation in diluted magnetic (Cd,Mn)Se quantum dotsPuls, J. / Hundt, A. / Thomas, H. / Henneberger, F. et al. | 2004
- 572
-
Optical phonons and resonant Raman scattering in II–VI spheroidal quantum dotsTrallero‐Giner, C. et al. | 2004
- 579
-
Spatial breathing of the exciton distribution in ZnSe quantum wellsDal Don, B. / Zhao, Hui / Schwartz, G. / Kalt, H. et al. | 2004
- 583
-
Dephasing of interacting s+and s-excitons in a ZnSe single quantum wellWagner, H.P. et al. | 2004
- 583
-
Dephasing of interacting σ+ and σ− excitons in a ZnSe single quantum wellWagner, H. P. / Tripathy, S. et al. | 2004
- 587
-
Comparison of linear and nonlinear optical spectra of various ZnO epitaxial layers and of bulk material obtained by different experimental techniquesPriller, H. / Brückner, J. / Gruber, Th. / Klingshirn, C. / Kalt, H. / Waag, A. / Ko, H. J. / Yao, T. et al. | 2004
- 591
-
MBE growth and optical properties of ZnO on GaAs(111) substratesMatsumoto, Takashi / Nishimura, Kazuto / Nabetani, Yoichi / Kato, Takamasa et al. | 2004
- 595
-
MBE growth of ZnSSeO alloy using ZnS as a sulfur sourceNabetani, Y. / Ito, Y. / Mukawa, T. / Okuno, T. / Kato, T. / Matsumoto, T. / Hirai, T. et al. | 2004
- 599
-
Molecular beam epitaxy of MgxZn1−xO layers without wurzite‐rocksalt phase mixing from x = 0 to 1 as an effect of ZnO buffer layerFujita, Shizuo / Takagi, Tsuyoshi / Tanaka, Hiroshi / Fujita, Shigeo et al. | 2004
- 599
-
Molecular beam epitaxy of MgxZn1-xO layers without wurzite-rocksalt phase mixing from xFujita, Shizuo et al. | 2004
- 603
-
Oxygen induced band‐gap reduction in ZnOxSe1−x alloysShan, W. / Walukiewicz, W. / Ager III, J. W. / Yu, K. M. / Wu, J. / Haller, E. E. / Nabetani, Y. et al. | 2004
- 607
-
Identification of bound exciton complexes in ZnOStrassburg, M. / Rodina, A. / Dworzak, M. / Haboeck, U. / Krestnikov, I.L. / Hoffmann, A. / Gelhausen, O. / Phillips, M.R. / Alves, H.R. / Zeuner, A. et al. | 2004
- 612
-
High‐quality ZnO epilayers grown on Zn‐polar ZnO substrates by plasma‐assisted molecular beam epitaxyKato, Hiroyuki / Sano, Michihiro / Miyamoto, Kazuhiro / Yao, Takafumi et al. | 2004
- 616
-
Characterization of undoped ZnO layers grown by molecular beam epitaxy towards biosensing devicesOgata, K. / Komuro, T. / Hama, K. / Koike, K. / Sasa, S. / Inoue, M. / Yano, M. et al. | 2004
- 620
-
Rotation‐domains suppression and polarity control of ZnO epilayers grown on skillfully treated c‐Al2O3 surfacesYoshikawa, Akihiko / Wang, Xinqiang / Tomita, Yosuke / Roh, Ok‐Hwan / Iwaki, Hiroyuki / Ishitani, Yoshihiro et al. | 2004
- 624
-
P‐type doping and devices based on ZnOLook, D. C. / Claflin, B. et al. | 2004
- 631
-
Near band edge emission of MBE grown ZnO epilayers: identification of donor impurities and O2 annealing effectsMorhain, C. / Teisseire‐Doninelli, M. / Vézian, S. / Deparis, C. / Lorenzini, P. / Raymond, F. / Guion, J. / Neu, G. et al. | 2004
- 635
-
Formation of ohmic contacts to p‐type ZnOKurimoto, Makoto / Ashrafi, A. B. M. Almamun / Ebihara, Masato / Uesugi, Katsuhiro / Kumano, Hidekazu / Suemune, Ikuo et al. | 2004
- 640
-
Epitaxial ZnO growth and p‐type doping with MOMBESuemune, Ikuo / Ashrafi, ABM. Almamun / Ebihara, Masato / Kurimoto, Makoto / Kumano, Hidekazu / Seong, Tae‐Yeon / Kim, Bong‐Joong / Ok, Young‐Woo et al. | 2004
- 648
-
ZnTe single crystal growth by the liquid encapsulated pulling methodAsahi, T. / Yabe, T. / Sato, K. et al. | 2004
- 652
-
Tuning the optical and magnetic properties of II–VI quantum dots by post‐growth rapid thermal annealingGurung, T. / Mackowski, S. / Jackson, H. E. / Smith, L. M. / Heiss, W. / Kossut, J. / Karczewski, G. et al. | 2004
- 656
-
Optically controlled magnetization of zero‐dimensional magnetic polarons in CdMnTe self‐assembled quantum dotsMackowski, S. / Gurung, T. / Nguyen, T. A. / Jackson, H. E. / Smith, L. M. / Kossut, J. / Karczewski, G. et al. | 2004
- 660
-
Diluted ZnMnTe oxide: a multi‐band semiconductor for high efficiency solar cellsYu, K. M. / Walukiewicz, W. / Wu, J. / Shan, W. / Scarpulla, M. A. / Dubon, O. D. / Beeman, J. W. / Becla, P. et al. | 2004
- 664
-
Light scattering study on hybrid structures of Zn1−x−yCdxMnySe quantum wells with ferromagnetic Co wiresSakuma, M. / Hyomi, K. / Souma, I. / Murayama, A. / Oka, Y. et al. | 2004
- 668
-
Magnetotransport and magnetic properties of p‐Zn1− xMnxTe:N – Carrier‐induced ferromagnetismNam, K.‐T. / Kuroda, S. / Kumekawa, T. / Ozaki, N. / Takita, K. et al. | 2004
- 672
-
Confinement‐induced enhancement of spin interactions in Mn‐doped II–VI semiconductor nanocrystalsBhattacharjee, A. K. / Pérez‐Conde, J. et al. | 2004
- 676
-
Zinc oxide thin films synthesized by metal organic chemical reactionsYasuda, Takashi / Segawa, Yusaburo et al. | 2004
- 680
-
Optical spin injection and tunneling in asymmetric coupled II–VI quantum wellsNawrocki, M. / Kłopotowski, Ł. / Suffczyński, J. et al. | 2004
- 688
-
Magnetic field switching of spin injection and spin coherence in magnetic quantum structuresGhali, M. / Kossut, J. / Janik, E. / Teppe, F. / Scalbert, D. et al. | 2004
- 692
-
Ferromagnetic phase in II–VI semiconductors controlled by carriersCibert, J. / Boukari, H. / Bertolini, M. / Pacuski, W. / Ferrand, D. / Tatarenko, S. / Kossacki, P. / Gaj, J.A. et al. | 2004
- 700
-
Magnetic resonant tunnelling diodes as voltage‐controlled spin selectorsGould, C. / Slobodskyy, A. / Slobodskyy, T. / Grabs, P. / Becker, C. R. / Schmidt, G. / Molenkamp, L. W. et al. | 2004
- 704
-
InAs/Zn(Mn)Te/Cd(Mn)Se pseudomorphic quantum well structures for spintronic applicationsToropov, A. A. / Terent'ev, Ya. V. / Shubina, T. V. / Sorokin, S. V. / Sedova, I. V. / Kaygorodov, V. A. / Solov'ev, V. A. / Mel'tser, B. Ya. / Ivanov, S. V. / Kop'ev, P. S. et al. | 2004
- 708
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Exchange induced Zeeman splitting in resonant tunnelling diodesEstanislau, J. F. / Bittencourt, A. C. R. / Marques, G. E. et al. | 2004
- 712
-
Quantum Hall ferromagnetism in II–VI based alloysJaroszyński, J. / Andrearczyk, T. / Karczewski, G. / Wróbel, J. / Wojtowicz, T. / Papis, E. / Kamińska, E. / Piotrowska, A. / Popović, Dragana / Dietl, T. et al. | 2004
- 718
-
Magneto‐optical spectroscopy of gated p‐doped CdMnTe quantum wellsBoukari, H. / Bertolini, M. / Ferrand, D. / Cibert, J. / Tatarenko, S. / Kossacki, P. / Gaj, J. A. et al. | 2004
- 722
-
Magneto‐photoluminescence study on magnetic/non‐magnetic semiconductor coupled quantum dotsLee, S. / Shin, D. Y. / Titova, L. / Kutrowski, M. / Dobrowolska, M. / Furdyna, J. K. et al. | 2004
- 727
-
High stability of CdZnSSe active layers in ZnSe‐based laser diodes by introducing strain‐compensating barrier layersGust, Arne / Klude, Matthias / Ueta, Akio / Roventa, Elena / Hommel, Detlef et al. | 2004
- 731
-
Green monolithic II–VI vertical‐cavity surface‐emitting laser operating at room temperatureKruse, C. / Ulrich, S. M. / Alexe, G. / Roventa, E. / Kröger, R. / Brendemühl, B. / Michler, P. / Gutowski, J. / Hommel, D. et al. | 2004
- 739
-
Development of yellow‐green LEDs and LDs using MgZnCdSe‐BeZnTe superlattices on InP substrates by MBEChe, Song‐Bek / Nomura, Ichirou / Kikuchi, Akihiko / Kishino, Katsumi et al. | 2004
- 747
-
Proposal of a novel BeZnSeTe quaternary for II‐VI middle range visible light emitting devices on InP substratesTakashima, Yasushi / Nomura, Ichirou / Nakai, Yuki / Kikuchi, Akihiko / Kishino, Katsumi et al. | 2004
- 759
-
Time‐ and bias‐dependent effects in ZnCd(Mg)Se blue and red quantum well light emitting diodes studied by cathodoluminescenceNikiforov, A. Yu. / Cargill III, G. S. / Guo, S. P. / Tamargo, M. C. et al. | 2004
- 763
-
ZnS‐based photonic crystal phosphors fabricated using atomic layer depositionKing, J. S. / Neff, C. W. / Blomquist, S. / Forsythe, E. / Morton, D. / Summers, C. J. et al. | 2004
- 767
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Extrinsic doping effect in the fabrication of CIGS and CIGSS thin film solar cellsRamanathan, K. / Pankow, J. / Asher, S. et al. | 2004
- 771
-
Development of CdxZn1−xTe alloy thin films for tandem solar cell applicationsDhere, Ramesh / Gessert, Tim / Zhou, Jie / Pankow, Joel / Asher, Sally / Moutinho, Helio et al. | 2004
- 775
-
CBD‐Cd1−xZnxS thin films and their application in CdTe solar cellsZhou, J. / Wu, X. / Teeter, G. / To, B. / Yan, Y. / Dhere, R. G. / Gessert, T. A. et al. | 2004
- 779
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14% sputtered thin‐film solar cells based on CdTeCompaan, A. D. / Gupta, A. / Drayton, J. / Lee, S‐H. / Wang, S. et al. | 2004
- 783
-
CdZnTe and CdTe materials for X‐ray and gamma ray radiation detector applicationsSzeles, Csaba et al. | 2004
- R1
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Saturated absorption and reverse saturated absorption of Cu:SiO2 at λ = 532 nmGaneev, R. A. / Ryasnyansky, A. I. / Stepanov, A. L. / Usmanov, T. et al. | 2004
- R5
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Temperature dependence of the energy gap of MgxZnyCd1−x−ySe alloyMaksimov, O. / Muñoz, Martin / Wang, W. H. / Tamargo, M. C. / Samarth, N. et al. | 2004
- R8
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Second order nonlinear susceptibility coefficients of porous semiconducting compoundsMonecke, J. / Bezrukova, J. / Cordts, W. / Richardson, G. et al. | 2004
- R11
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Intersubband absorption in n‐type GaAs/AlGaAs (001) quantum wells: A tight‐binding studyShtinkov, N. / Vlaev, S. J. et al. | 2004
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Saturated absorption and reverse saturated absorption of Cu:SiO2 at l= 532 nmGaneev, R.A. et al. | 2004