Seeded growth of CuGaSe2 single crystals using the traveling heater method (English)
- New search for: Miyake, H.
- New search for: Miyake, H.
- New search for: Tajima, M.
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In:
Journal of crystal growth
;
125
, 1-2
; 381-383
;
1993
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ISSN:
- Article (Journal) / Print
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Title:Seeded growth of CuGaSe2 single crystals using the traveling heater method
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Contributors:
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Published in:Journal of crystal growth ; 125, 1-2 ; 381-383
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Publisher:
- New search for: Elsevier
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Place of publication:Amsterdam [u.a.]
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Publication date:1993
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ISSN:
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ZDBID:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
- New search for: 38.31 / 33.61 / 35.90
- Further information on Basic classification
- New search for: 535/3475
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Keywords:
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Classification:
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Source:
Table of contents – Volume 125, Issue 1-2
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
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High resolution electron microscopic study of a Ga-containing carbonate apatiteCuisinier, F.J.G. / Voegel, J.-C. / Apfelbaum, F. / Mayer, I. et al. | 1992
- 7
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Habit, structure and surface formation of Te particles deposited in a high-resolution transmission electron microscopeIsshiki, Toshiyuki / Tsujikura, Masakazu / Itoh, Takashi / Konishi, Takashi / Nishio, Koji / Saijo, Hiroshi / Shiojiri, Makoto et al. | 1992
- 17
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Single-crystal growth of superconducting Bi2Sr2CaCu2O8 using rotary cruciblesCampá, J.A. / Gutiérrez-Puebla, E. / Monge, M.A. / Rasines, I. / Ruíz-Valero, C. et al. | 1992
- 27
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The effect of extremely low frequency (ELF) electric fields on biomineralization in vitroDalas, E. / Fatouros, D. et al. | 1992
- 33
-
Premelting of ice in exfoliated graphite; a neutron diffraction studyGay, J.-M. / Suzanne, J. / Dash, J.G. / Fu, Haiying et al. | 1992
- 42
-
On the occurrence of {113}; facets on CVD-grown diamondJanssen, G. / Schermer, J.J. / van Enckevort, W.J.P. / Giling, L.J. et al. | 1992
- 51
-
Effects of gravity and temperature gradient on the diamond formation during synthesis at 4.4. GPa and 1300 oCLee, J.-K. et al. | 1993
- 51
-
Effects of gravity and temperature gradient on the diamond formation during synthesis at 4.4 GPa and 1300°CLee, Jae-Kap / Park, Jong-Ku / Eun, Kwang Yong et al. | 1992
- 59
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Measurement of the kinetic effect on the concentration field of a growing dendriteTanaka, Atsushi / Sano, Masaki et al. | 1992
- 59
-
Measurement of the kinetic effect on the concentration held of a growing dendriteTanaka, A. et al. | 1993
- 65
-
The estimation of maximum growth rate for aluminium nitride crystals grown by direct sublimationDryburgh, P.M. et al. | 1992
- 69
-
Prediction of dislocation generation during Bridgman growth of GaAs crystalsTsai, C.T. / Yao, M.W. / Chait, Arnon et al. | 1992
- 81
-
Steady state fluorescence spectroscopy of pyranine as a trace extrinsic probe to study structure in aqueous sugar solutionsChakraborty, Reena / Berglund, Kris A. et al. | 1992
- 97
-
Scanning electron microscopy and wavelength dispersive spectroscopy in situ observations of the formation and growth of Ag dendrites in AgBr layers initiated and stimulated by electron beam exposureStoyanchev, R. / Spassova, E. / Danev, G. et al. | 1992
- 102
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Thermal stress analysis of silicon bulk single crystal during Czochralski growthMiyazaki, N. / Uchida, H. / Munakata, T. / Fujioka, K. / Sugino, Y. et al. | 1992
- 112
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Convection related radial segregation in an idealized horizontal Bridgman configuration; the quasi diffusive regime limitGarandet, J.P. et al. | 1992
- 121
-
Synthesis and characterization of monomagnesium phosphate tetrahydrateDudenhoefer, R. / Messing, G.L. / Brown, P.W. / Johnson, G.G. Jr. et al. | 1992
- 127
-
Calculation of the region for the compositional variation-slope of In1−xGaxAs grown from In-Ga-As solution with GaAs source materialNakajima, Kazuo et al. | 1992
- 135
-
Analysis of the characteristics of crystal growth from solution under microgravity II. effects of various physical and geometrical parametersXu, Zhengyi / Huo, Chongru / Ge, Peiwen / Zhu, Zhenhe et al. | 1992
- 149
-
Crystal growth in floating zone with phase change and thermo-solutal convectionsXiong, B. / Hu, W.R. et al. | 1992
- 164
-
Kinetics of homogeneous decomposition of silaneZambov, L. et al. | 1992
- 175
-
The influence of the Czochralski growth parameters on the growth of lithium niobate single crystalsLee, S.H. / Kim, Y.J. / Cho, S.H. / Yoon, E.P. et al. | 1992
- 181
-
Three-dimensional numerical analyses of the effects of a cusp magnetic field on the flows, oxygen transport and heat transfer in a Czochralski silicon meltHirata, Hiroshi / Hoshikawa, Keigo et al. | 1992
- 208
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Growth of subgrain-free Tl3AsSe3 crystals for efficient harmonic conversion to mid-infrared frequencyYoo, K.C. / Storrick, R.P. / Henningsen, T. / Spitznagel, J.A. / Hopkins, R.H. et al. | 1992
- 215
-
Calcium oxalate monohydrate crystallization: citrate inhibition of nucleation and growth stepsAntinozzi, Peter A. / Brown, Charles M. / Purich, Daniel L. et al. | 1992
- 223
-
Formation of polycrystalline zircon (ZrSiO4) from amorphous silica and amorphous zirconiaItoh, Takao et al. | 1992
- 229
-
Elementary growth kinetics of silver electrocrystallizationVekilov, P.G. / Nanev, Chr. et al. | 1992
- 237
-
Acicular crystals of synthetic quartz; a general view of their morphologies and defectsYoshimura, J. / Taki, S. et al. | 1992
- 251
-
Interpretation of dissolution kinetics of dicalcium phosphate dihydrateZhang, Jingwu / Nancollas, George H. et al. | 1992
- 270
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Non-wetting container material for growing lithium and barium borate crystalsKatsumata, T. / Ohshima, K. / Oe, K. / Hisamoto, M. / Ohtaki, T. / Konoura, H. / Nakagawa, H. / Takahashi, K. et al. | 1992
- 281
-
The effect of growth temperature on plastic relaxation of In0.2Ga0.8As surface layers on GaAsHoward, L.K. / Kidd, P. / Dixon, R.H. et al. | 1992
- 291
-
On a substituting, sticking and trapping model of CVD Si1−xGex layer growthKühne, H. et al. | 1992
- 291
-
On a substituting, sticking and trapping model of (VI) Si~1~-~xGe~x layer growthKuehne, H. et al. | 1992
- 301
-
Investigation of dislocations in Si1−xGex/Si heterostructures grown by LPCVDTang, H.P. / Vescan, L. / Dieker, C. / Schmidt, K. / Lüth, H. / Li, H.D. et al. | 1992
- 311
-
Modeling of chimney CVD reactorsHolstein, W.L. et al. | 1992
- 320
-
InP substrate temperature measurements in a horizontal, low-pressure metalorganic chemical vapor deposition reactor by infrared laser interferometric thermometryMcCrary, V.R. / Donnelly, V.M. / Napholtz, S.G. / Hayes, T.R. / Davisson, P.S. / Bruno, D.C. et al. | 1992
- 329
-
Post-growth thermal annealing of GaAs on Si(001) grown by organometallic vapor phase epitaxyAyers, J.E. / Schowalter, L.J. / Ghandhi, S.K. et al. | 1992
- 336
-
Optical and electrical quality of InGaP grown on GaAs with low pressure metalorganic chemical vapour depositionHageman, P.R. / van Geelen, A. / Gabriëlse, W. / Bauhuis, G.J. / Giling, L.J. et al. | 1992
- 347
-
Selective embedded growth by LP-MOVPE in the Ga-In-As-P systemWestphalen, R. / Elsner, B. / Maassen, M. / Kayser, O. / Heime, K. / Balk, P. et al. | 1992
- 363
-
On the morphology of caprolactamGeertman, R.M. / van der Heijden, A.E.D.M. et al. | 1992
- 373
-
ZnSe blue-light-emitting diodeKrasnov, A.N. / Purtov, Yu.N. / Vaksman, Yu.F. / Serdyuk, V.V. et al. | 1992
- 375
-
Crystal growth of diamond in the system of carbon and water under very high pressure and temperatureYamaoka, Shinobu / Akaishi, Minoru / Kanda, Hisao / Osawa, Toshikazu et al. | 1992
- 378
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Vibrational stirring of a liquid phase epitaxial GaAs meltAlexiev, D. / Butcher, K.S.A. / Tansley, T.L. et al. | 1992
- 381
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Seeded growth of CuGaSe2 single crystals using the traveling heater methodMiyake, H. et al. | 1993
- 381
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Seeded growth of CuGaSe2 single crystals using the travelling heater methodMiyake, Hideto / Tajima, Masatoshi / Sugiyama, Koichi et al. | 1992
- 384
-
Shift of the excitonic resonances by thermal strain and lattice mismatch in CdS thin epitaxial layersBecker, U. / Giessen, H. / Zhou, F. / Gilsdorf, Th. / Loidolt, J. / Müller, M. / Grün, M. / Klingshirn, C. et al. | 1992
- 388
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Erratum| 1992
- iv
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Editorial board| 1992