Measurement of effective magnetic anisotropy of nanocrystalline Fe-Cu-Nb-Si-B soft magnetic alloys (English)
- New search for: Ho, Kai-Yuan
- New search for: Ho, Kai-Yuan
- New search for: Xiong, Xiang-Yuan
- New search for: Zhi, Jing
- New search for: Cheng, Li-Zhi
In:
Journal of applied physics
;
74
, 11
; 6788-6790
;
1993
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ISSN:
- Article (Journal) / Print
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Title:Measurement of effective magnetic anisotropy of nanocrystalline Fe-Cu-Nb-Si-B soft magnetic alloys
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Contributors:
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Published in:Journal of applied physics ; 74, 11 ; 6788-6790
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Publisher:
- New search for: AIP
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Place of publication:Melville, NY
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Publication date:1993
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ISSN:
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ZDBID:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
- New search for: 33.00 / 50.30
- Further information on Basic classification
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Keywords:
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Classification:
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Source:
Table of contents – Volume 74, Issue 11
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 6477
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Transformation of a time‐harmonic electromagnetic field in a suddenly created two‐resonance Lorentz mediumStanic´, Boz˘idar / Jelenak, Zorana / Jelenak, Aleksandar et al. | 1993
- 6482
-
Emission life and surface analysis of barium‐impregnated thermionic cathodesAida, T. / Tanuma, H. / Sasaki, S. / Yaguchi, T. / Taguchi, S. / Koganezawa, N. / Nonaka, Y. et al. | 1993
- 6488
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Electron beam charging thermography of mirrors of semiconductor laser diodesJakubowicz, A. et al. | 1993
- 6495
-
Low‐voltage, low‐chirp, absorptively bistable transmission modulators using type‐IIA and type‐IIB In0.3Ga0.7As/Al0.33Ga0.67As/ In0.15Ga0.85As asymmetric coupled quantum wellsTrezza, J. A. / Larson, M. C. / Lord, S. M. / Harris, J. S. et al. | 1993
- 6503
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Condition for no thermal runaway in cw semiconductor lasersYoo, Jay S. / Fang, Sychi / Lee, Hong H. et al. | 1993
- 6511
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Analysis of excitation and coherent amplitude enhancement of surface acoustic waves by the phase velocity scanning methodYamanaka, Kazushi / Kolosov, O. V. / Nagata, Yoshihiko / Koda, Toshio / Nishino, Hideo / Tsukahara, Yusuke et al. | 1993
- 6523
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Experimental determination of the surface acoustic wave properties of new fine grain piezoelectric ceramicsFeuillard, G. / Lethiecq, M. / Amazit, Y. / Certon, D. / Millar, C. / Patat, F. et al. | 1993
- 6530
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Effects of ambient gas on photo‐acoustic displacement measurement by laser interferometric probeSumie, Shingo / Takamatsu, Hiroyuki / Nishimoto, Yoshiro / Kawata, Yutaka / Horiuchi, Takefumi / Nakayama, Hiroshi / Kanata, Takashi / Nishino, Taneo et al. | 1993
- 6534
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The physics of ion impact cathode heatingMorgan, W. L. / Pitchford, L. C. / Boisseau, S. et al. | 1993
- 6538
-
Plasma chemistry of He/O2/SiH4 and He/N2O/SiH4 mixtures for remote plasma‐activated chemical‐vapor deposition of silicon dioxideKushner, Mark J. et al. | 1993
- 6554
-
Initial elementary processes in tetrafluoroethylene plasma: An ab initio molecular orbital studySato, Kota / Komatsu, Toru / Iwabuchi, Susumu et al. | 1993
- 6558
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Hydrogen Balmer alpha line shapes for hydrogen‐argon mixtures in a low‐pressure rf dischargeDjurovic´, S. / Roberts, J. R. et al. | 1993
- 6566
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An ordered Ga2Te3 phase in the ZnTe/GaSb interfaceChou, C. T. / Hutchison, J. L. / Cherns, D. / Casanove, M.‐J. / Steeds, J. W. / Vincent, R. / Lunn, B. / Ashenford, D. A. et al. | 1993
- 6571
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Current conduction in an implant isolated GaAs/AlGaAs heterostructureHenderson, T. / Liu, W. / Kim, T. S. et al. | 1993
- 6576
-
The gettering efficiency of a direct bonded interfaceKissinger, G. / Morgenstern, G. / Richter, H. et al. | 1993
- 6580
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Defects and ion redistribution in implant‐isolated GaAs‐based device structuresPearton, S. J. / Ren, F. / Chu, S. N. G. / Abernathy, C. R. / Hobson, W. S. / Elliman, R. G. et al. | 1993
- 6587
-
Measurement of ion induced damage‐profiles in GaAsShwe, C. / Kraisingdecha, P. / Gal, M. / Varley, B. / Gross, M. et al. | 1993
- 6592
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Pulsed laser‐induced melting followed by quenching of silicon filmsSameshima, T. / Usui, S. et al. | 1993
- 6599
-
Electrical activation of boron coimplanted with carbon in a silicon substratede Souza, J. P. / Boudinov, H. et al. | 1993
- 6603
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Elastic properties of orthorhombic KNbO3 single crystals by Brillouin scatteringKalinichev, A. G. / Bass, J. D. / Zha, C. S. / Han, P. D. / Payne, D. A. et al. | 1993
- 6609
-
Characteristic length and time in electromigrationShatzkes, Morris / Huang, Yusue et al. | 1993
- 6615
-
Effect of H on Si molecular‐beam epitaxyEaglesham, D. J. / Unterwald, F. C. / Luftman, H. / Adams, D. P. / Yalisove, S. M. et al. | 1993
- 6619
-
The use of an Al sacrificial layer to improve retention during high dose Pt ion implantation into NiClapham, Lynann / Whitton, J. L. / Pascual, R. / Ridgway, M. C. / Hauser, N. et al. | 1993
- 6625
-
Raman scattering study of lead zirconate titanate thin films prepared on silicon substrates by radio frequency magnetron sputteringTaguchi, I. / Pignolet, A. / Wang, L. / Proctor, M. / Le´vy, F. / Schmid, P. E. et al. | 1993
- 6632
-
Growth of YbSb2/GaSb(001) and GaSb/YbSb2/GaSb(001) heterostructures by molecular beam epitaxyGuivarc’h, A. / Ballini, Y. / Auvray, P. / Caulet, J. / Minier, M. / Dupas, G. / Ropars, G. et al. | 1993
- 6636
-
Numerical fitting of transient decays in the high defect density limitYang, S. / Lamp, C. D. et al. | 1993
- 6642
-
Temperature dependence of Auger lifetime in heavily doped Hg1−xCdxTeDe, S. S. / Ghosh, A. K. / Halder, J. C. / Bera, M. / Hazra, A. K. et al. | 1993
- 6645
-
Time‐dependent model of an optically triggered GaAs switchCapps, C. D. / Falk, R. A. / Adams, J. C. et al. | 1993
- 6655
-
Field‐effect conductance in amorphous silicon thin‐film transistors with a defect pool density of statesDeane, S. C. / Powell, M. J. et al. | 1993
- 6667
-
Investigation of compensation defects in CdTe:Cl samples grown by different techniquesEiche, C. / Maier, D. / Sinerius, D. / Weese, J. / Benz, K. W. / Honerkamp, J. et al. | 1993
- 6671
-
Effect of proton irradiation and annealing on the diffusion length in indium phosphideHakimzadeh, Roshanak / Vargas‐Aburto, Carlos / Bailey, Sheila G. / Williams, Wendell S. et al. | 1993
- 6676
-
Anisotropic screening and ionized impurity scattering in semiconductor superlattices and multiple quantum wellsMeyer, J. R. / Arnold, D. J. / Hoffman, C. A. / Bartoli, F. J. et al. | 1993
- 6686
-
Controlled p‐ and n‐type doping of homo‐ and heteroepitaxially grown InSbThompson, Philip E. / Davis, John L. / Yang, Ming‐Jey / Simons, David S. / Chi, Peter H. et al. | 1993
- 6691
-
Compositional and electronic properties of chemical‐vapor‐deposited Y2O3 thin film‐Si(100) interfacesSharma, R. N. / Rastogi, A. C. et al. | 1993
- 6703
-
Interfacial solid‐phase reactions, crystallographic structures, and electrical characteristics of Hf/(001)Si systemsZaima, S. / Wakai, N. / Yamauchi, T. / Yasuda, Y. et al. | 1993
- 6710
-
Micrograin structure influence on electrical characteristics of sputtered indium tin oxide filmsHiguchi, Masatoshi / Uekusa, Shinichiro / Nakano, Ryotaro / Yokogawa, Kazuhiko et al. | 1993
- 6714
-
Energy density distribution of interface states in Au Schottky contacts to epitaxial In0.21Ga0.79As:Zn layers grown on GaAs by metalorganic vapor phase epitaxySingh, A. / Cova, P. / Masut, R. A. et al. | 1993
- 6720
-
Electrical and structural properties of dislocations confined in a InGaAs/GaAs heterostructureUchida, Y. / Kakibayashi, H. / Goto, S. et al. | 1993
- 6726
-
The effect of growth temperature on the electrical properties of AlInAs/InP grown by molecular beam epitaxy and metal‐organic chemical‐vapor depositionLuo, J. K. / Thomas, H. / Clark, S. A. / Williams, R. H. et al. | 1993
- 6734
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The influence of the strain-induced electric field on the charge distribution in GaN-AIN-GaN structureBykhovski, Alexei et al. | 1993
- 6734
-
The influence of the strain‐induced electric field on the charge distribution in GaN‐AlN‐GaN structureBykhovski, Alexei / Gelmont, Boris / Shur, Michael et al. | 1993
- 6740
-
The achievement of near‐theoretical‐minimum contact resistance to InPFatemi, Navid S. / Weizer, Victor G. et al. | 1993
- 6747
-
A theoretical investigation on the quantum field effect directional couplerXu, Guangzhao / Yang, Min / Jiang, Ping et al. | 1993
- 6754
-
Evaluation of silicon‐on‐insulator substrates using photoconductive frequency resolved spectroscopyLourenc¸o, M. A. / Homewood, K. P. / Hemment, P. L. F. et al. | 1993
- 6759
-
Critical currents of ceramic superconductors induced by pulsed magnetic fieldsYasuoka, H. / Mazaki, H. / Tochihara, S. / Kakihana, M. / Yoshimura, M. et al. | 1993
- 6767
-
A parametric study of the phase formation of in situ BiSrCaCuO thin films by laser ablationLin, Wen‐Tai / Chen, Yung‐Fu / Kao, Chih‐Chang / Wu, Kuo‐Chung et al. | 1993
- 6767
-
A parametric study of the phase formation of in situ BiSrCaCuO fhin films by laser ablationLin, Wen-Tai / Chen, Yung-Fu / Ko, Chih-Chang / Wu, Kuo-Chung et al. | 1993
- 6774
-
Optimization of superconducting tunnel junction based x‐ray detectorsFoden, C. L. / Rando, N. / Peacock, A. / van Dordrecht, A. et al. | 1993
- 6780
-
Morphology and transport of YBa2Cu3O7−x sputtered in argon, oxygen, and hydrogen: Dependence on deposition temperatureCukauskas, E. J. / Allen, L. H. / Sherrill, G. K. / Holm, R. T. / Vold, C. et al. | 1993
- 6788
-
Measurement of effective magnetic anisotropy of nanocrystalline Fe‐Cu‐Nb‐Si‐B soft magnetic alloysHo, Kai‐Yuan / Xiong, Xiang‐Yuan / Zhi, Jing / Cheng, Li‐Zhi et al. | 1993
- 6788
-
Measurement of effective magnetic anisotropy of nanocrystalline Fe-Cu-Nb-Bi-B soft magnetic alloysHo, Kai-Yuan / Xiong, Xiang-Yuan / Jing Zhi / Cheng, Li-zhi et al. | 1993
- 6791
-
Coercivity of Sm‐Fe‐N ferromagnets produced by the mechanical alloying techniqueKou, X. C. / Qiang, W. J. / Kronmu¨ller, H. / Schultz, L. et al. | 1993
- 6798
-
Neutron‐diffraction and Mo¨ssbauer effect study of the preferential silicon site occupation and magnetic structure of Nd2Fe14−xSixBMarasinghe, G. K. / Pringle, O. A. / Long, Gary J. / James, W. J. / Xie, D. / Li, J. / Yelon, W. B. / Grandjean, F. et al. | 1993
- 6798
-
Neutron-diffraction and Mössbauer effect study of the preferential silicon site occupation and magnetic structure of Nd2Fe14-xSixBMarasinghe, G.K. et al. | 1993
- 6798
-
Neutron-diffraction and Moessbauer effect study of the preferential silicon site occupation and magnetic structure of Nd~2Fe~1~4~-~xSi~xBMarasinghe, G. K. / Pringle, O. A. / Long, G. J. / James, W. J. et al. | 1993
- 6810
-
Combined three‐axis surface magneto‐optical Kerr effects in the study of surface and ultrathin‐film magnetismYang, Z. J. / Scheinfein, M. R. et al. | 1993
- 6824
-
X‐ray refinement and magnetic properties of nitrogenated melt‐spun Sm2Fe17 compoundYang, Choong‐Jin / Lee, Woo‐Young / Shin, Hyung‐Sup et al. | 1993
- 6830
-
Studies on the relation between the eigenvalue and enhancement of Kerr effect for magneto‐optical materialsFang, Ruiyi / Peng, Chubing / Ma, Tingjun / Long, Ping / Liu, Jun / Nin, Ying / Dai, Daosheng et al. | 1993
- 6840
-
Magneto‐optical properties and magnetic anisotropies for Au/Cu/Au/Co and Cu/Au/Cu/Co multilayersSakurai, Makoto / Shinjo, Teruya et al. | 1993
- 6847
-
Effect of carbon on the structural and magnetic properties of intermetallic compounds with the ThMn12 structureYang, Ying‐Chang / Zhang, Xiao‐Dong / Dong, Sheng‐Zhi / Pan, Qi et al. | 1993
- 6851
-
Electron‐cyclotron‐resonance plasma‐assisted radio‐frequency‐sputtered strontium titanate thin filmsBelsick, J. R. / Krupanidhi, S. B. et al. | 1993
- 6859
-
A Monte Carlo model for trapped charge distribution in electron-irradiated a-quartzOh, K.H. et al. | 1993
- 6859
-
A Monte Carlo model for trapped charge distribution in electron‐irradiated α‐quartzOh, K. H. / Ong, C. K. / Tan, B. T. G. / Le Gressus, G. et al. | 1993
- 6866
-
Photoluminescence from heteroepitaxial (211)B CdTe grown on (211)B GaAs by molecular beam epitaxyGold, Jeffrey S. / Myers, T. H. / Giles, N. C. / Harris, K. A. / Mohnkern, L. M. / Yanka, R. W. et al. | 1993
- 6872
-
Enhanced refractive index change in asymmetrical quantum wells with an applied electric fieldDave´, Digant P. et al. | 1993
- 6876
-
Quantitative infrared analysis of the stretching peak of SiO2 films deposited from tetraethoxysilane plasmasGoullet, A. / Charles, C. / Garcia, P. / Turban, G. et al. | 1993
- 6883
-
Raman scattering from In1−xAlxSb metastable epilayersGnezdilov, V. P. / Lockwood, D. J. / Webb, J. B. / Maigne´, P. et al. | 1993
- 6888
-
Scaling laws for diamond chemical‐vapor deposition. I. Diamond surface chemistryGoodwin, D. G. et al. | 1993
- 6895
-
Scaling laws for diamond chemical‐vapor deposition. II. Atomic hydrogen transportGoodwin, D. G. et al. | 1993
- 6907
-
Die‐upset PrCo5‐type magnets from melt‐spun ribbonsFuerst, C. D. / Brewer, E. G. et al. | 1993
- 6912
-
Material and electrical properties of highly mismatched InxGa1−xAs on GaAs by molecular‐beam epitaxyChang, Shou‐Zen / Chang, Tien‐Chih / Shen, Ji‐Lin / Lee, Si‐Chen / Chen, Yang‐Fang et al. | 1993
- 6919
-
The structural homogeneity of boron carbide thin films fabricated using plasma‐enhanced chemical vapor deposition from B5H9+CH4Lee, Sunwoo / Mazurowski, J. / O’Brien, W. L. / Dong, Q. Y. / Jia, J. J. / Callcott, T. A. / Tan, Yexin / Miyano, K. E. / Ederer, D. L. / Mueller, D. R. et al. | 1993
- 6925
-
Neutron scattering investigation of the structure of semiconductor‐doped glassesBanfi, GianPiero / Degiorgio, Vittorio / Speit, Burkhard et al. | 1993
- 6936
-
Effects of substrate temperature and ion incident energy on silicon surface cleaning using a hydrogen plasma excited by electron cyclotron resonanceNakashima, Kenji / Ishii, Masahiko / Hayakawa, Tetsuo / Tajima, Ichiro / Yamamoto, Minoru et al. | 1993
- 6941
-
Potential role of atomic carbon in diamond depositionZhang, Y. F. / Dunn‐Rankin, D. / Taborek, P. et al. | 1993
- 6948
-
Time‐of‐flight mass spectroscopic studies on the laser ablation processFukushima, Kensuke / Kanke, Yukio / Morishita, Tadataka et al. | 1993
- 6953
-
Generation of response maps of gas mixturesLundstro¨m, Ingemar / Sundgren, Hans / Winquist, Fredrik et al. | 1993
- 6962
-
Quantitative time‐resolved observations of ground‐state zinc atoms, methyl radicals, and excited CH radicals resulting from the 193 nm photodissociation of dimethylzincElias, Joseph A. / Wisoff, Peter J. / Wilson, William L. et al. | 1993
- 6972
-
Multiplication performance self‐stabilization in blocked impurity band photodetectorsShadrin, V. D. / Coon, V. T. / Blokhin, I. K. et al. | 1993
- 6978
-
High gain and wide dynamic range punchthrough heterojunction phototransistorsWang, Y. / Yang, E. S. / Wang, W. I. et al. | 1993
- 6982
-
Diffuse reflectivity measurements of polyimide during argon fluoride excimer laser ablationEdiger, M. N. / Pettit, G. H. / Sauerbrey, R. et al. | 1993
- 6985
-
Model of the microwave response in granular Bi‐Sr‐Ca‐Cu‐O thin filmsGrabow, B. E. / Boone, B. G. / Sova, R. M. et al. | 1993
- 6988
-
Grain‐growth process during crystallization of Fe80B20 amorphous alloysMalizia, F. / Ronconi, F. et al. | 1993
- 6990
-
Radiative and nonradiative transitions in GaAs:ErFang, Xiao M. / Li, Yabo / Langer, Dietrich W. et al. | 1993
- 6993
-
A 1.9 eV photoluminescence induced by 4 eV photons in high‐purity wet synthetic silicaAnedda, A. / Bongiovanni, G. / Cannas, M. / Congiu, F. / Mura, A. / Martini, M. et al. | 1993
- 6993
-
A 1.9 eV photoluminescence induced by 4 eV photons on high-purity wet synthetic silicaAnedda, A. / Bongiovanni, G. / Cannas, M. / Congiu, F. / Mura, A. / Martini, M. et al. | 1993
- 6996
-
Improved optical model for resonant tunneling diodeZohta, Yasuhito / Tanamoto, Tetsufumi et al. | 1993
- 6999
-
Magnetic circular dichroism in x‐ray absorption for well characterized Fe/Pt multilayersWaddill, G. D. / Tobin, J. G. / Jankowski, A. F. et al. | 1993
- 7002
-
Monte Carlo simulation for dissociation of hydrogen during electron assisted chemical vapor deposition of diamondSaitoh, Hidetoshi / Mima, Hiroyuki / Ishiguro, Takashi / Ichinose, Yukio et al. | 1993
- 7005
-
Conflicting values of the third‐order nonlinear permittivity of α‐quartzHruska, Carl K. et al. | 1993
- 7005
-
Conflicting values of the third-order nonlinear permittivity of alpha-quartzHruska, C.K. et al. | 1993
- 7005
-
Conflicting values of the third-order nonlinear permittivity of a-quartzHruska, Carl K. et al. | 1993
- 7008
-
Asymmetry of the screw dislocation core structure in cadmium sulfide crystalsNegrii, V. D. et al. | 1993
- 7011
-
Optoelectronic modulation spectroscopy applied to the characterization of field effect transistorsWang, Q. H. / Swanson, J. G. et al. | 1993
- 7014
-
Nonlinear optical materials based on MBe2BO3F2 (M=Na,K)Mei, Linfeng / Wang, Yebin / Chen, Chuangtian / Wu, Bochuang et al. | 1993
- 7016
-
Growth temperature and annealing effects on deep traps of In0.52Al0.48As grown by molecular beam epitaxyOh, Won‐Ung / Oh, Jae‐Eung / Ryoo, Seong‐Ryong / Paek, Su‐Hyun / Chung, Chun‐Ki / Kang, Tae‐Won et al. | 1993
- 7019
-
Direct deposition of highly coercive gamma iron oxide thin films for magnetic recordingDhara, Sandip / Rastogi, A. C. / Das, B. K. et al. | 1993
- 7022
-
5‐THz bandwidth from a GaAs‐on‐silicon photoconductive receiverPedersen, J. Engholm / Keiding, S. Rud / So&slash;rensen, C. B. / Lindelof, P. E. / Ru¨hle, W. W. / Zhou, X. Q. et al. | 1993
- 7025
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CUMULATIVE AUTHOR INDEX| 1993