Temperature dependence of radiative and non-radiative lifetimes in hydrogenated amorphous silicon (Unknown)
- New search for: Muschik, T.
- New search for: Muschik, T.
- New search for: Schwarz, R.
In:
Journal of non-crystalline solids
;
164
; 619-622
;
1994
-
ISSN:
- Article (Journal) / Print
-
Title:Temperature dependence of radiative and non-radiative lifetimes in hydrogenated amorphous silicon
-
Contributors:Muschik, T. ( author ) / Schwarz, R.
-
Published in:Journal of non-crystalline solids ; 164 ; 619-622
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Publisher:
- New search for: North-Holland Publ. Co.
-
Place of publication:Amsterdam
-
Publication date:1994
-
ISSN:
-
ZDBID:
-
Type of media:Article (Journal)
-
Type of material:Print
-
Language:Unknown
- New search for: 51.45 / 51.60 / 33.61 / 35.90
- Further information on Basic classification
- New search for: 535/3475
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Keywords:
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Classification:
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Source:
Table of contents – Volume 164
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
-
The Mott Lecture. Structural and electronic properties of amorphous SiGe: H alloysPaul, W. et al. | 1994
- 11
-
Activated transport in improved hydrogenated amorphous germanium (a-Ge: H) - the influence of cooling rate, contacts, electric field and a-Si: H barriersDrüsedau, T. et al. | 1994
- 15
-
Spin dependent photoconductivity in hydrogenated amorphous silicon germanium alloysGraeff, C.F.O. et al. | 1994
- 19
-
Effect of H-content and H-bonding configuration on light and thermal induced metastability in amorphous hydrogenated germanium (a-Ge: H)Eberhardt, K. et al. | 1994
- 23
-
Electronic mobility gap structure and the nature of deep defects in amorphous silicon-germanium alloysUnold, T. et al. | 1994
- 27
-
Interfacial reactions in the a-Si1-xGex:H-Cr-quartz systemEdelman, F. et al. | 1994
- 31
-
Importance of surface processes in defect formation in a-Si: HGanguli, G. et al. | 1994
- 37
-
Towards high deposition rates of a-Si: H: the limiting factorsRoca Cabarrocas, P. et al. | 1994
- 43
-
Defect determination kinetics during the growth of a-Si: HKamei, T. et al. | 1994
- 47
-
Stable a-Si: H fabricated from halogenous silane by ECR hydrogen plasmaAzuma, M. et al. | 1994
- 51
-
Threshold intensity for dangling-bond-termination reaction by ultraviolet laser irradiation during plasma deposition of a-Si: H filmsSuzuki, A. et al. | 1994
- 55
-
Control of a-Si: H deposition by the ion flux in a VHF plasmaHeintze, M. et al. | 1994
- 59
-
Influence of higher deposition temperature on a-Si: H material properties, powder formation and light-induced degradation, using the VHF (70 MHz) glow discharge techniqueKroll, U. et al. | 1994
- 63
-
Relationship between film quality and deposition rate for a-Si: H by ECR plasma CVDZhang, M. et al. | 1994
- 67
-
Hydrogenated amorphous silicon-nitrogen alloys, a-Si,N: H: a candidate alloy for the wide band gap photo-active material in tandem photovoltaic (PV) devicesWilliams, M.J. et al. | 1994
- 71
-
Fabrication of amorphous silicon solar cells at high temperatures using ECR deposition techniquesDalal, V.L. et al. | 1994
- 75
-
Key parameters for further reduction of gap states in a-Ge: H and its improved stability under keV-electron irradiationDrüsedau, T. et al. | 1994
- 79
-
Growth of amorphous zinc phosphide films by reactive radio frequency sputteringWeber, A. et al. | 1994
- 83
-
Deposition of a-Si: H with hot-wire-techniqueZedlitz, R. et al. | 1994
- 87
-
Deposition of device quality a-Si: H films with the hot-wire techniquePapadopulos, P. et al. | 1994
- 91
-
Electron-flux induced growth of microcrystalline germanium by ECR plasmaAoki, T. et al. | 1994
- 95
-
Hydrogenated amorphous silicon films prepared from trisilane by windowless hydrogen discharge lampYoshida, A. et al. | 1994
- 99
-
Unusual magnetron sputtered a-Si: H materials obtained at high deposition rates as favourable precursors for the preparation of large grain sized crystallized thin silicon filmsCuniot, M. et al. | 1994
- 103
-
In-situ investigation of the growing a-Si: D surface by infrared reflection absorption spectroscopyToyoshima, Y. et al. | 1994
- 107
-
In situ infrared ellipsometry study of the hydrogen incorporation in p-doped amorphous silicon and p-i interfacesOssikovski, R. et al. | 1994
- 111
-
Real time infrared reflectance spectroscopy: A study of hydrogen incorporation and release during a-Si: H growth by reactive magnetron sputteringKatiyar, M. et al. | 1994
- 115
-
Optical detection and dynamics of surface transient processes in plasma CVD of hydrogenated amorphous siliconTakano, A. et al. | 1994
- 119
-
In situ UV-visible and infrared ellipsometry study of the influence of silane dilution on the growth of hydrogenated amorphous siliconShirai, H. et al. | 1994
- 123
-
In situ characterization of chemical annealing of a-Si: H by photoelectron spectroscopyGertkemper, T. et al. | 1994
- 127
-
Influence of powder formation in a silane discharge on a-Si: H film growth monitored by in situ ellipsometrySchmidt, U.I. et al. | 1994
- 131
-
The effects of Ar and He dilution of silane plasmas on the microstructure of a-Si: H detected by small-angle X-ray scatteringJones, S.J. et al. | 1994
- 135
-
Microstructure of P-Se glasses and low frequency Raman scatteringPhillips, R.T. et al. | 1994
- 139
-
Structure of Ag-Ge-S glasses determined by isotopic substitution neutron scattering and reverse Monte Carlo simulationsLee, J.H. et al. | 1994
- 143
-
Effect of deposition temperature on disorder in InPBayliss, S.C. et al. | 1994
- 147
-
Reverse Monte Carlo simulation: the structure of amorphous siliconPusztai, L. et al. | 1994
- 151
-
Structural studies of amorphous Cd59As41 and Cd26As74 films by anomalous X-ray scatteringBurian, A. et al. | 1994
- 155
-
Small angle X-ray scattering and infrared spectroscopy study of sputtered a-Ge: HMulato, M. et al. | 1994
- 159
-
Local structure and dynamics of amorphous germanium studied by the cumulant expansion of EXAFSDalba, G. et al. | 1994
- 163
-
Light-induced effects and stability in a-Si: H and related alloysShimizu, T. et al. | 1994
- 169
-
Pulsed-ESR study of light-induced metastable defect in a-Si: HYamasaki, S. et al. | 1994
- 175
-
Temperature dependence of creation and annealing of light-induced metastable defects in a-Si: HStradins, P. et al. | 1994
- 179
-
Do impurities affect the optoelectronic properties of a-Si: H?Nakata, M. et al. | 1994
- 183
-
Isolating the rate of light-induced annealing of the dangling-bond defects in a-Si: HGleskova, H. et al. | 1994
- 187
-
Difference between deposition- and light-induced defects in a-Si: H studied by light-induced annealing experimentsHata, N. et al. | 1994
- 191
-
Kinetics of defect creation by pulsed laser illumination in hydrogenated amorphous silicon films deposited from pure silane and from silane-helium mixturesVignoli, S. et al. | 1994
- 195
-
Light-induced transient changes of the occupied density of defect states of a-Si: HGraf, W. et al. | 1994
- 199
-
Thermally stimulated defect removal in hydrogenated amorphous silicon thin film transistorsMorgan, P.N. et al. | 1994
- 203
-
Thermodynamic equilibrium kinetics of phosphorus and boron doped a-Si: HNebel, C.E. et al. | 1994
- 207
-
Light-induced states in a-As2Se3: comparison with a-Si: HNaito, H. et al. | 1994
- 211
-
A new method for detecting the delicate Si: H bond change in a-Si: HKong, G.L. et al. | 1994
- 215
-
Dispersive model for the creation and annealing processes of light-induced defects in a-Si: HMorigaki, K. et al. | 1994
- 219
-
The presence of different kinds of dangling bonds and their light-induced creation in a-Si: HHikita, H. et al. | 1994
- 223
-
New results of spin-lattice relaxation in a-Si: H by pulsed ESRDurny, R. et al. | 1994
- 227
-
Possibility of hydrogen migration in photoinduced defect creation process of a-Si: HKondo, M. et al. | 1994
- 231
-
Kinetics and steady-states of light-induced defects in a-Si: H prepared by three different techniquesHata, N. et al. | 1994
- 235
-
Pulsed ruby laser accelerated degradation of amorphous hydrogenated siliconKlima, O. et al. | 1994
- 239
-
Dynamic phase diagram for a-Si in rapid thermal processesKitagawa, A. et al. | 1994
- 243
-
In-situ measurements during the growth of a-Si: H on c-Si substratesSwiatkowski, C. et al. | 1994
- 247
-
Aging effects in a-Si: H pin solar cells investigated by below gap modulated photocurrent spectroscopyMencaraglia, D. et al. | 1994
- 251
-
Persistent photoconductivity in a-Si1-xSx: H at low sulfur concentrationWang, S.L. et al. | 1994
- 255
-
Thermal quenching in doped LPCVD amorphous silicon hydrogenated by ion implantationPietruszko, S.M. et al. | 1994
- 259
-
Effect of the deposition variables on amorphous silicon stabilityBuitrago, R.H. et al. | 1994
- 263
-
Effect of hydrogen exchange on diffusion and evolution in hydrogenated amorphous siliconJackson, W.B. et al. | 1994
- 269
-
Hydrogen diffusion mechanism in amorphous silicon from deuterium tracer studiesBranz, H.M. et al. | 1994
- 273
-
Accelerated hydrogen migration under steady-state and pulsed illumination in a-Si: HSantos, P.V. et al. | 1994
- 277
-
Hydrogen migration in a pulsed electric field in a-Si: HSantos, P.V. et al. | 1994
- 281
-
The effect of post-hydrogenation on the equilibrium and metastable properties of hydrogenated amorphous siliconNickel, N.H. et al. | 1994
- 285
-
Experimental study of disorder and defects in undoped a-Si: H as a function of annealing and hydrogen evolutionZellama, K. et al. | 1994
- 289
-
Diffusion of lithium and hydrogen in hydrogenated amorphous siliconBeyer, W. et al. | 1994
- 293
-
Interstitial hydrogen in silicon: a theoretical studyColle, R. et al. | 1994
- 297
-
Modelling of hydrogen centres in silicon and its oxides by muon implantationSingh, A. et al. | 1994
- 301
-
Monte Carlo simulations of anomalous relaxation in a-Si: H - random walk in spaces of fractal dimensionFujiwara, S. et al. | 1994
- 305
-
Hydrogen diffusion in a-Si: H-a-Si structure under electrical biasSong, Z. et al. | 1994
- 309
-
Optimisation of the hydrogen content in a-Si: H deposited at high rate by dc magnetron sputteringBeldi, N. et al. | 1994
- 313
-
Microscopic motion of hydrogen in the dilute and clustered phases of hydrogenated amorphous siliconHari, P. et al. | 1994
- 317
-
The defect-pool model and charged defects in amorphous siliconSchumm, G. et al. | 1994
- 323
-
Defect pool model parameters for amorphous silicon derived from field effect measurementsDeane, S.C. et al. | 1994
- 327
-
Relaxation of the D center in amorphous silicon and how this accounts for the observed energy distributions of deep defects within the mobility gapCohen, J.D. et al. | 1994
- 331
-
Photocarrier drift and recombination in a-Si: H: the vital importance of defect relaxationSchiff, E.A. et al. | 1994
- 335
-
On the role of hydrogen in metastable defect equilibration in undoped hydrogenated amorphous siliconVanecek, M. et al. | 1994
- 339
-
Transient forward bias currents in a-Si: H p-i-n devicesHan, D. et al. | 1994
- 343
-
Electronic and optical properties of n-type a-Si: HGaughan, K. et al. | 1994
- 347
-
Steady-state optical modulation spectroscopy of B2H6 doped a-Si: HHerremans, H. et al. | 1994
- 351
-
Interpretation of CPM measurements in amorphous semiconductorsHattori, K. et al. | 1994
- 355
-
More insights from simulation for the interpretation of the constant photocurrent methodPlatz, R. et al. | 1994
- 359
-
Optical absorption of high quality a-Si:H and a-SixN1-x: H in the low energy region 0.43 eV-1.5 eV by PDSNonomura, S. et al. | 1994
- 363
-
Analysis of the temperature dependence of the CPM-derived optical absorption spectra of hydrogenated amorphous silicon filmsSládek, P. et al. | 1994
- 367
-
Optically detected ESR studies of a-Si: HMao, D. et al. | 1994
- 371
-
ESR studies on a-Si: H: evidence for charged defects and safe hole trapsHautala, J. et al. | 1994
- 375
-
Photoconductivity spectroscopy (CPM) on a-Ge: H at low temperaturesScholz, A. et al. | 1994
- 379
-
Thickness dependence of spectral photoconductivity in a-Si: HFiorini, P. et al. | 1994
- 383
-
Dual-beam photocurrent spectra in undoped a-Si: H: anomalous band, optical transition energy, and correlation energyLiu, J.Z. et al. | 1994
- 387
-
Photoinduced metastable defects in amorphous semiconductors: communality between hydrogenated amorphous silicon and chalcogenidesShimakawa, K. et al. | 1994
- 391
-
Pressure induced effects in glassy semiconductors: variations of negative-U center properties and related superconductivityKlinger, M.I. et al. | 1994
- 395
-
Light-induced defects in a-Si: HGolikova, O.A. et al. | 1994
- 399
-
The dependencies of the two carriers mobility-lifetime products on the position of the Fermi level in a-Si: HLubianiker, Y. et al. | 1994
- 403
-
Influence on the transport properties of the deposition temperature of a-Si: H films deposited from mixtures of silane in helium at high deposition ratesKleider, J.P. et al. | 1994
- 407
-
Cycled xerographic and time-of-flight measurements: theory and experimentVeres, J. et al. | 1994
- 411
-
Study of the density of states in a-Si: H using the Si-electrolyte systemMany, A. et al. | 1994
- 415
-
Defect density and photoelectrical properties of alternative doped amorphous siliconSchmal, J. et al. | 1994
- 419
-
CPM and spectral photoconductivity techniques: a critical analysis of the experimental resultsConte, G. et al. | 1994
- 423
-
Determination of the density of states in p doped hydrogenated amorphous silicon by means of the modulated photocurrent experimentLongeaud, C. et al. | 1994
- 427
-
Limits of the constant photocurrent method (CPM) for the determination of the deep defect density in amorphous hydrogenated silicon (a-Si: H)Mettler, A. et al. | 1994
- 431
-
Equilibrium and non-equilibrium transport in band tailsThomas, P. et al. | 1994
- 437
-
Effective temperature for electrons in band tailsBaranovskii, S.D. et al. | 1994
- 441
-
Transport near the mobility edge, the sign of the Hall effect, photoreduction and oxidation of amorphous InOxPashmakov, B. et al. | 1994
- 445
-
Hall effect near the mobility edgeOkamoto, H. et al. | 1994
- 449
-
Hall experiments and interpretation on a-Si: H and a-SiC: HNebel, C.E. et al. | 1994
- 453
-
In search of a normal Hall effect in amorphous siliconTong, B.Y. et al. | 1994
- 457
-
Electrons, holes, and the Hall effect in amorphous siliconMorgan, G.J. et al. | 1994
- 461
-
Multifractality and anomalous diffusion at the mobility edge in disordered systemsHuckestein, B. et al. | 1994
- 465
-
Stochastic transport model for diffusive properties in amorphous systemsGomi, S. et al. | 1994
- 469
-
Conductance fluctuations in doped hydrogenated amorphous siliconFan, J. et al. | 1994
- 473
-
Random telegraphic noise in a-Si1-xCx: H Schottky barriersBernhard, N. et al. | 1994
- 477
-
Response time measurements in microcrystalline siliconSchwarz, R. et al. | 1994
- 481
-
Time and frequency domain studies of photoconductivity in amorphous semiconductorsMain, C. et al. | 1994
- 485
-
Role of dangling bond charge in determining mt-products for a-Si: HShah, A. et al. | 1994
- 489
-
Demonstration of space-charge-limited time of flight as a new tool for characterization of real a-Si: H solar cellsKocka, J. et al. | 1994
- 493
-
Trapping effects in a-Si: H investigated by the SSPG techniqueHaridim, M. et al. | 1994
- 497
-
Carrier mobility and lifetime in a-Si: H determined by the moving grating techniqueHaken, U. et al. | 1994
- 501
-
The effect of hydrogenation on the electronic properties of amorphous silicon-nickel alloys near the metal-insulator transitionDammer, U. et al. | 1994
- 505
-
Electric field relaxation in prolonged-time photocurrent experimentsNesládek, M. et al. | 1994
- 509
-
Amorphous silicon dispersive transport considerations for analysis of films and solar cellsFortmann, C.M. et al. | 1994
- 513
-
Conductivity and magnetoconductivity of amorphous CrxGe1-x near the metal-insulator transitionHeinrich, A. et al. | 1994
- 517
-
Dark and photoconductivity of TBP doped N-type a-Si: HMehra, R.M. et al. | 1994
- 521
-
Study of the temperature and field dependence of electron drift mobility in a-Si1-xCx :H using the time-of-flight techniqueBayley, P.A. et al. | 1994
- 525
-
Transient photoconductivity response with optical bias in a-Si: HPipoz, P. et al. | 1994
- 529
-
Field enhanced conductivity in a-Si: H thin film transistorsNagy, A. et al. | 1994
- 533
-
Experimental dark discharge of a-Si1-xCx: H films and its comparison to Monte Carlo simulationsSwaaij, R.A.C.M.M.van et al. | 1994
- 537
-
Temperature dependent SCLC in amorphous siliconSchauer, F. et al. | 1994
- 541
-
Recombination in a-Si: H films and pin-structures studied by electrically detected magnetic resonance (EDMR)Fuhs, W. et al. | 1994
- 547
-
Spin-dependent photoconductivity as a function of wavelength: a test for the constant photocurrent method in a-Si: HBrandt, M.S. et al. | 1994
- 551
-
Transport and recombination in a-Si: H p-i-n diodes under forward bias conditionsCarius, R. et al. | 1994
- 555
-
Influence of defects and temperature on the lifetime distribution of carriers in a-Si: HSchubert, M. et al. | 1994
- 559
-
Discontinuous change of photoluminescence lifetime with temperature in hydrogenated amorphous siliconOheda, H. et al. | 1994
- 563
-
Non-equilibrium carriers in a-Si: H excited by defect absorptionSaleh, R. et al. | 1994
- 567
-
Reconsideration of electron-lattice interaction in amorphous semiconductorsShinozuka, Y. et al. | 1994
- 571
-
Temperature dependence of photoluminescence spectra and model of self-trapping of holes in a-Si: HMorigaki, K. et al. | 1994
- 575
-
Optical detection of photoconductivity in hydrogenated amorphous silicon, a-Si: H, in the sub-picosecond time domainKurz, H. et al. | 1994
- 579
-
Subnanosecond bimolecular non-radiative recombination in a-Si: HJuska, G. et al. | 1994
- 583
-
Frequency-resolved spectroscopy and its application to lifetime studies in a-Si: HStachowitz, R. et al. | 1994
- 587
-
Quantum efficiency of geminate recombination under dispersive transport conditionsArkhipov, V.I. et al. | 1994
- 591
-
Electric field quenching of continuous wave photoluminescence in hydrogenated amorphous siliconYi, S. et al. | 1994
- 595
-
The effect of photodegradation on electroluminescence in a-Si: H devicesWang, K. et al. | 1994
- 599
-
Effect of light-induced degradation on photoconductive gain in a-Si: H n-i-p devicesVanderhaghen, R. et al. | 1994
- 603
-
Time-resolved transients of IR-stimulated luminescence and conductivity in a-Si: HVollmar, H.-P. et al. | 1994
- 607
-
Photoconductivity in compensated a-Si: H and the effect of bias light on the drift mobilityTzanetakis, P. et al. | 1994
- 611
-
A NAN-like model for the growth and steady state magnitude of photoluminescence and carrier population in amorphous semiconductors at low temperaturesSearle, T.M. et al. | 1994
- 615
-
The shape of the PL band in a-Si: H and its alloys of carbon and nitrogenSearle, T.M. et al. | 1994
- 619
-
Temperature dependence of radiative and non-radiative lifetimes in hydrogenated amorphous siliconMuschik, T. et al. | 1994
- 623
-
Trapping and recombination processes in amorphous semiconductors studied by the optical bias dependence of the modulated photoconductivityKounavis, P. et al. | 1994
- 627
-
Electron and hole mt products in a-Si: H and the standard dangling bond modelMorgado, E. et al. | 1994
- 627
-
Electron and hole products in a-Si:H and the standard dangling bond modelMorgado, E. et al. | 1993
- 631
-
On the nature of photo-induced defects and recombination mechanisms in light-soaked a-Si: H filmsZvyagin, I.P. et al. | 1994
- 635
-
Photoluminescence and photothermal deflection spectroscopy in potassium doped a-Si: HGalloni, R. et al. | 1994
- 639
-
Visible photoluminescence of nanometer-size Ge crystallites in SiO2 glassy matricesKanemitsu, Y. et al. | 1994
- 643
-
Physics of a-Si: H p-i-n devicesLeComber, P.G. et al. | 1994
- 643
-
P.G. LeComber Memorial Lecture. Physics of a-Si:H p-i-n devicesStreet, R. A. et al. | 1993
- 653
-
Physics of a-Si: H switching diodesBerkel, C.van et al. | 1994
- 659
-
Light and current degradation of a-Si: H pin, nin and pip diodes detected with CPMOstendorf, H.-C. et al. | 1994
- 663
-
Some aspects of the role of holes in the transient response of a-Si: H pin-diodesBrüggemann, R. et al. | 1994
- 667
-
Investigation of the interface properties of hydrogenated amorphous silicon p-i junctionsTrijssenaar, M. et al. | 1994
- 671
-
Tailoring defects on amorphous silicon pin devicesMartins, R. et al. | 1994
- 675
-
Spectrally resolved electroluminescence and photoluminescence in a-Si: H pin-diodes compared with optical multilayer calculationsBecker, F. et al. | 1994
- 679
-
a-Si technologies for high efficiency solar cellsTsuda, S. et al. | 1994
- 685
-
Manufacturing of large area single junction a-Si: H solar modules with 10.7% efficiencyBauer, J. et al. | 1994
- 689
-
High efficiency a-Si: H alloy cell deposited at high deposition rateSaito, K. et al. | 1994
- 693
-
Spin-dependent transport in amorphous silicon nin-structuresBrandt, M.S. et al. | 1994
- 697
-
Degradation of a-Si: H p-i-n solar cells studied by electrically detected magnetic resonanceLips, K. et al. | 1994
- 701
-
Defect distribution in a-Si: H pin solar cells before and after degradationBlock, M. et al. | 1994
- 705
-
Transient response of the photocurrent in a-Si: H layers and solar cellsUlrichs, C. et al. | 1994
- 709
-
Stability of amorphous silicon materials incorporated in solar cells and intrinsic layer profiling for enhanced stabilized performanceSchropp, R.E.I. et al. | 1994
- 713
-
Uniform-field model of a-Si: H pin solar cellsKusian, W. et al. | 1994
- 717
-
The dependence of a-Si:H-c-Si solar cell generator and spectral response characteristics on heterojunction band discontinuitiesEschrich, H. et al. | 1994
- 721
-
Amorphous silicon thin-film transistorsTsukada, T. et al. | 1994
- 727
-
Integrated conventional and laser re-crystallised amorphous silicon thin film transistors for large area imaging and display applicationsHack, M. et al. | 1994
- 731
-
Fabrication and performance of thin film transistors, TFTs, incorporating doped c-Si source and drain contacts, and boron-compensated c-Si channel layersHe, S. S. / Williams, M. J. / Stephens, D. J. / Lucovsky, G. et al. | 1993
- 731
-
Fabrication and performance of thin film transistors, TFTs, incorporating doped mc-Si source and drain contacts, and boron-compensated mc-Si channel layersHe, S.S. et al. | 1994
- 735
-
Application of photo induced discharge technique for the investigation of a-Si: H thin-film transistor instabilityFortunato, G. et al. | 1994
- 739
-
Density of states in thin film transistors from the modulated photocurrent technique: application to the study of metastabilitiesKleider, J.P. et al. | 1994
- 743
-
Hydrogenated amorphous silicon thin film transistor fabricated by n + anodizationBae, B.S. et al. | 1994
- 747
-
Voltage dependence of off current in a-Si: H TFT under backlight illuminationYoon, J.K. et al. | 1994
- 751
-
Activated hydrogen effects on the electrical stability of a-Si: H thin-film transistorsCarluccio, R. et al. | 1994
- 755
-
Simulations on back gate effects of a-Si TFT off-current under illuminationNishida, S. et al. | 1994
- 759
-
Fabrication of high performance APCVD a-Si TFT using ion dopingAhn, B.C. et al. | 1994
- 763
-
Annealing effects of low pressure mercury and excimer laser on degraded a-Si: H TFTsLee, S.K. et al. | 1994
- 767
-
Capacitance studies of the a-Si TFT input stageLong, A.R. et al. | 1994
- 771
-
a-Si: H linear and 2-D image sensorsWeisfield, R.L. et al. | 1994
- 777
-
Doped amorphous selenium based photoreceptors for electroradiography: determination of X-ray sensitivityAiyah, V. et al. | 1994
- 781
-
Measurement and simulation of the dynamic performance of a-Si: H image sensorsWieczorek, H. et al. | 1994
- 785
-
Optimization criteria for a-Si: H nipin color sensorsStiebig, H. et al. | 1994
- 789
-
Two dimensional image sensors based on amorphous silicon alloy p-i-n diodesCesare, G.De et al. | 1994
- 793
-
Hydrogenated amorphous silicon based light-addressable potentiometric sensor (LAPS) for hydrogen detectionPecora, A. et al. | 1994
- 797
-
Material properties, project design rules and performances of single and dual-axis a-Si: H large area position sensitive detectorsFortunato, E. et al. | 1994
- 801
-
a-Si: H based particle detectors with low depletion voltageMorosanu, C. et al. | 1994
- 805
-
Design, realization and characterization of mesa insulated a-Si bulk barrier phototransistorMasini, G. et al. | 1994
- 809
-
Visible thin film light emitting diode using a-SiN: H-a-SiC: H heterojunctionsKruangam, D. et al. | 1994
- 813
-
a-SiC: H thin film visible light-emitting diodes with highly conductive wide band gap a-SiC: H as the carrier injection layersLau, S.P. et al. | 1994
- 817
-
Use of a-Si: H memory devices for non-volatile weight storage in artificial neural networksHolmes, A.J. et al. | 1994
- 821
-
DC and ac measurements on metal-a-Si: H-metal thin film devicesHajto, J. et al. | 1994
- 825
-
In situ investigation of amorphous silicon-silicon dioxide interfaces by infrared ellipsometryOssikovski, R. et al. | 1994
- 829
-
Electronic and structural properties of the a-Si: H-a-SiNx: H interfacePlass, M.F. et al. | 1994
- 833
-
Electronic states of a-Si: H upon Cs adsorption and deep defect creationPatriarca, F. et al. | 1994
- 837
-
Carrier transport in a-Si: H-a-Si: N and a-Si: H- a-Si: C multilayersChévrier, J.-B. et al. | 1994
- 841
-
Structural and optical properties of a-Si: H-a-Ge: H multilayersDeki, H. et al. | 1994
- 845
-
A position detector based on the lateral photoeffect in a-Si: H-metal (Ti, Mo) multilayersPanckow, A.N. et al. | 1994
- 849
-
Interface state density of SiNx: H-c-Si MIS structureMaeda, K. et al. | 1994
- 853
-
Radiative transition with visible light in crystallized a-Ge: H- a-SiNx: H multiquantum-well structuresChen, K.J. et al. | 1994
- 857
-
Amorphous silicide formation in the Cr-amorphous silicon systemMasaki, Y. et al. | 1994
- 861
-
On the determination of the interface density of states in a-Si:H-a-Si1-xCx:H multilayersBertomeu, J. et al. | 1994
- 865
-
Optically-induced stepwise absorption in Se-Se85Te15 multilayersVateva, E. et al. | 1994
- 869
-
Amorphous silicon on TiO2: charge transfer and interface structureWahi, A. et al. | 1994
- 873
-
Charge transport along and across a-Si: H-a-SiC: H multilayersArlauskas, K. et al. | 1994
- 877
-
New applications of the equation-of-motion method: optical propertiesWeaire, D. et al. | 1994
- 881
-
Structure and optical properties of a-Si1-xNx:H alloysSotiropoulos, J. et al. | 1994
- 885
-
Femtosecond photomodulation spectroscopy of a-Si: H using an optical parametric oscillatorMoon, J.A. et al. | 1994
- 889
-
Optical properties of amorphous gallium arsenide filmsMurri, R. et al. | 1994
- 893
-
Study of band-edge parameters in a-Si: H alloys by polarized electroabsorption effectsTsutsumi, Y. et al. | 1994
- 897
-
Optical contrast formation in a-Si1-xCx: H films by ion implantationTsvetkova, T. et al. | 1994
- 901
-
Linear and nonlinear optical properties of chalcogenide glassesHajto, E. et al. | 1994
- 905
-
Influence of surface defects on CPM spectraAsano, A. et al. | 1994
- 909
-
Gap state defects in hydrogenated amorphous silicon-carbon alloys studied by photothermal deflection spectroscopyFathallah, M. et al. | 1994
- 913
-
Studies on optical absorption coefficients a of a-Si: H by photoluminescence absorption spectroscopyNitta, S. et al. | 1994
- 913
-
Studies on optical absorption coefficients of a-Si:H by photoluminescence absorption spectroscopyNitta, S. / Nishimura, E. / Minamide, T. / Uchida, T. et al. | 1993
- 917
-
Phonon localization and transport in disordered systemsOrbach, R. et al. | 1994
- 923
-
Nonequilibrium phonon dynamics in amorphous siliconScholten, A.J. et al. | 1994
- 927
-
Light scattering by acoustic phonons in unhydrogenated and hydrogenated amorphous siliconBustarret, E. et al. | 1994
- 931
-
Electronic and structural properties of porous siliconStutzmann, M. et al. | 1994
- 937
-
Preparation and properties of anodized amorphous siliconBustarret, E. et al. | 1994
- 941
-
New interpretation for visible photoluminescence in porous siliconKondo, M. et al. | 1994
- 945
-
Visible light emission at room temperature from PECVD a-Si:H:O:Du, J.F. et al. | 1994
- 949
-
A visible light-emitting diode using a PN junction of porous silicon and microcrystalline silicon carbideMimura, H. et al. | 1994
- 953
-
Ultrafast electronic relaxation processes in porous siliconMatsumoto, T. et al. | 1994
- 957
-
Nature of electron spin resonance centers in porous siliconYokomichi, H. et al. | 1994
- 961
-
Transport properties of selfsupporting porous siliconKlima, O. et al. | 1994
- 965
-
Light induced metastable effects on the electrical conductance in porous siliconLee, W.H. et al. | 1994