2.9 V Operation GaAs Power MESFET with 31.5-dBm Output Power and 64% Power-Added Efficiency (English)
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In:
IEEE electron device letters
;
15
, 9
; 324-326
;
1994
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ISSN:
- Article (Journal) / Print
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Title:2.9 V Operation GaAs Power MESFET with 31.5-dBm Output Power and 64% Power-Added Efficiency
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Contributors:
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Published in:IEEE electron device letters ; 15, 9 ; 324-326
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Publisher:
- New search for: IEEE
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Place of publication:New York, NY
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Publication date:1994
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ISSN:
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ZDBID:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
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Table of contents – Volume 15, Issue 9
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 321
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Rectifier Characteristics Based on Bipolar-Mode SIT OperationYano, K. et al. | 1994
- 324
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2.9 V Operation GaAs Power MESFET with 31.5-dBm Output Power and 64% Power-Added EfficiencyLee, J.L. et al. | 1994
- 327
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Carrier Recombination Influence on the SOIMOSFET Floating Body EffectKoh, R. et al. | 1994
- 330
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An Improved Inverted d-Doped GaAs-InGaAs Pseudomorphic Heterostructure Grown by MOCVDWu, C.-L. et al. | 1994
- 333
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Ultrahigh and Controllable Drain Current Peak-To-Valley Ratio in Negative Resistance Field-Effect Transistors with a Strained InGaAs ChannelLai, J.-T. et al. | 1994
- 336
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High Current Gain, Low Offset Voltage Heterostructure Emitter Bipolar TransistorsChen, H.R. et al. | 1994
- 339
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A Novel Self-Aligned TiN Formation by N+-2 Implantation During Two-Step Annealing Ti-Salicidation for Submicrometer CMOS Technology ApplicationChen, C.W. et al. | 1994
- 342
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A Silicidation-Induced Process Consideration for Forming Scaled-Down Silicided JunctionCheng, H.C. et al. | 1994
- 345
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On the Frequency-Dependent Capacitance of the Nitride-Oxide-Nitride CapacitorCohen, S.S. et al. | 1994
- 348
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Impact Ionization Modeling Using Simulation of High Energy Tail DistributionsAhn, J.-G. et al. | 1994
- 351
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Performance and Reliability Enhancement for CVD Tungsten Polycided CMOS Transistors Due to Fluorine Incorportion in the Gate OxideChen, I.-C. et al. | 1994
- 354
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Measurement of the Electron Ionization Coefficient at Low Electric Fields in GaAs-Based Heterojunction Bipolar TransistorsCanali, C. et al. | 1994
- 357
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P-N Double Quantum Well Resonant Interband Tunneling Diode with Peak-To-Valley Current Ratio of 144 at Room TemperatureTsai, H.H. et al. | 1994
- 360
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High-Performance Emitter-Up-Down SiGe HBT'sBurghartz, J.N. et al. | 1994
- 363
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Optimization of Series Resistance in Sub-0.2 mm SOI MOSFET'sSu, L.T. et al. | 1994
- 366
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Deep-Submicrometer Channel Design in Silicon-on-Insulator (SOI) MOSFET'sSu, L.T. et al. | 1994