LETTERS - Compound Semiconductor Devices - Optically Modulated High-Sensitivity Heterostructure Varactor (English)
- New search for: Zhao, X.
- New search for: Zhao, X.
- New search for: Cola, A.
- New search for: Tersigni, A.
- New search for: Quaranta, F.
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- New search for: Spanier, J.E.
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In:
IEEE electron device letters
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27
, 9
; 710-712
;
2006
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ISSN:
- Article (Journal) / Print
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Title:LETTERS - Compound Semiconductor Devices - Optically Modulated High-Sensitivity Heterostructure Varactor
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Contributors:Zhao, X. ( author ) / Cola, A. / Tersigni, A. / Quaranta, F. / Gallo, E. / Spanier, J.E. / Nabet, B.
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Published in:IEEE electron device letters ; 27, 9 ; 710-712
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Publisher:
- New search for: IEEE
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Place of publication:New York, NY
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Publication date:2006
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ISSN:
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ZDBID:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
- New search for: 770/5670
- New search for: 53.51
- Further information on Basic classification
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Keywords:
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Classification:
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Source:
Table of contents – Volume 27, Issue 9
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 709
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EDITORIAL - Changes to the Editorial BoardTaur, Y. et al. | 2006
- 710
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LETTERS - Compound Semiconductor Devices - Optically Modulated High-Sensitivity Heterostructure VaractorZhao, X. et al. | 2006
- 713
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LETTERS - Compound Semiconductor Devices - High Breakdown Voltage Achieved on AlGaN-GaN HEMTs With Integrated Slant Field PlatesDora, Y. et al. | 2006
- 716
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LETTERS - Compound Semiconductor Devices - The 1.6-kV AlGaN-GaN HFETsTipirneni, N. et al. | 2006
- 719
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LETTERS - Compound Semiconductor Devices - AIN-GaN Insulated-Gate HFETs Using Cat-CVD SiNHigashiwaki, M. et al. | 2006
- 722
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LETTERS - Compound Semiconductor Devices - A Capless InP-In0.52Al0.48As-In0.53Ga0.47As p-HEMT Having a Self-Aligned Gate StructureKim, T.-W. et al. | 2006
- 725
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LETTERS - Materials and Processing - Resistive Switching Mechanisms of V-Doped SrZrO3 Memory FilmsLin, C.-C. et al. | 2006
- 728
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LETTERS - Materials and Processing - Drive-Current Enhancement in Ge n-Channel MOSFET Using Laser Annealing for Source-Drain ActivationZhang, Q. et al. | 2006
- 731
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LETTERS - Materials and Processing - Work Function Tuning Via Interface Dipole by Ultrathin Reaction Layers Using AlTa and AlTaN AlloysChen, B. et al. | 2006
- 734
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LETTERS - Materials and Processing - Oxide-Nitride Storage Dielectric Formation in a Single-Furnace Process for Trench DRAMWu, Y.-H. et al. | 2006
- 737
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LETTERS - Materials and Processing - Organic Complementary D Flip-Flops Enabled by Perylene Diimides and PentaceneYoo, B. et al. | 2006
- 740
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LETTERS - Materials and Processing - BaSm2Ti4O12 Thin Film for High-Performance Metal-Insulator-Metal CapacitorsKim, B.J. et al. | 2006
- 743
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LETTERS - Optoelectronics - Enhancement of Brightness Uniformity by a New Voltage-Modulated Pixel Design for AMOLED DisplaysLu, H.-Y. et al. | 2006
- 746
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LETTERS - Optoelectronics - Characterization of an Integrated Fluorescence-Detection Hybrid Device With Photodiode and Organic Light-Emitting DiodeShin, K.-S. et al. | 2006
- 749
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LETTERS - Silicon Alloys and Thin Film Devices - Enhanced Band-to-Band-Tunneling-Induced Hot-Electron Injection in p-Channel Flash by Band-gap Offset ModificationWang, C.-C. et al. | 2006
- 752
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LETTERS - Silicon Alloys and Thin Film Devices - Temperature-Compensated Devices Using Thin TeO2 Layer With Negative TCDDewan, N. et al. | 2006
- 755
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LETTERS - Silicon and Elemental Semiconductor Devices - Insight Into the Suppressed Recovery of NBTI-Stressed Ultrathin Oxynitride Gate pMOSFETAng, D.S. et al. | 2006
- 759
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LETTERS - Silicon and Elemental Semiconductor Devices - Simulation Study of High-Performance Modified Saddle MOSFET for Sub-50-nm DRAM Cell TransistorsPark, K.-H. et al. | 2006
- 762
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LETTERS - Silicon and Elemental Semiconductor Devices - HfSiON n-MOSFETs Using Low-Work Function HfSix GateWu, C.H. et al. | 2006
- 765
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LETTERS - Silicon and Elemental Semiconductor Devices - Random Telegraph Signal Noise in Gate-All-Around Si-FinFET With Ultranarrow BodyLim, Y.F. et al. | 2006
- 769
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LETTERS - Silicon and Elemental Semiconductor Devices - Drive-Current Enhancement in FinFETs Using Gate-Induced StressTan, K.-M. et al. | 2006
- 772
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LETTERS - Silicon and Elemental Semiconductor Devices - RF Split Capacitance-Voltage Measurements of Short-Channel and Leaky MOSFET DevicesAndrés, E.San et al. | 2006
- 775
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LETTERS - Silicon and Elemental Semiconductor Devices - Room-Temperature Low-Dimensional Effects in Pi-Gate SOI MOSFETsColinge, J.P. et al. | 2006
- 778
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LETTERS - Silicon and Elemental Semiconductor Devices - Strained-SOI n-Channel Transistor With Silicon-Carbon Source-Drain Regions for Carrier Transport EnhancementChui, K.-J. et al. | 2006
- 781
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IEEE ELECTRON DEVICES SOCIETY MEETINGS CALENDAR| 2006
- 783
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Information for Authors| 2006
- 784
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ANNOUNCEMENTS - Call for Papers -- Special Issue of the IEEE TRANSACTIONS ON ELECTRON DEVICES on Spintronics| 2006
- 786
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ANNOUNCEMENTS - Call for Papers -- Special Issue of the IEEE TRANSACTIONS ON ELECTRON DEVICES on Simulation and Modeling of Nanoelectronics Devices| 2006
- 788
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ANNOUNCEMENTS - Call for Papers -- IEEE Portable 2007| 2006
- 789
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ANNOUNCEMENTS - Call for Papers -- IEEE CADSM 2007| 2006
- 790
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ANNOUNCEMENTS - Call for Papers -- IEEE 2007 Sarnoff Symposium| 2006