Strained InAs-Ga0.47In0.53As quantum-well heterostructures grown by molecular-beam epitaxy for long-wavelength laser applications (English)
- New search for: Tournié, Eric
- New search for: Tournié, Eric
- New search for: Grunberg, Patrick
- New search for: Fouillant, Catherine
- New search for: Baranov, Alexei
- New search for: Joullié, André
- New search for: Ploog, Klaus H.
In:
Solid state electronics
;
37
, 4-6
; 1311-1314
;
1994
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ISSN:
- Article (Journal) / Print
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Title:Strained InAs-Ga0.47In0.53As quantum-well heterostructures grown by molecular-beam epitaxy for long-wavelength laser applications
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Contributors:Tournié, Eric ( author ) / Grunberg, Patrick / Fouillant, Catherine / Baranov, Alexei / Joullié, André / Ploog, Klaus H.
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Published in:Solid state electronics ; 37, 4-6 ; 1311-1314
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Publisher:
- New search for: Elsevier
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Place of publication:Amsterdam [u.a.]
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Publication date:1994
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ISSN:
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ZDBID:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
- New search for: 770/3480/5670
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Keywords:
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Classification:
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Source:
Table of contents – Volume 37, Issue 4-6
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 523
-
Fabrication of quantum wires and dots by MOCVD selective growthArakawa, Yasuhiko et al. | 1994
- 529
-
Polarization spectroscopy of modulated GaAs-GaAlAs quantum wells grown on vicinal surfaces: anisotropic islands or ordered growth?Bloch, J. et al. | 1994
- 535
-
Preparation of low dimensional structures by molecular beam epitaxy-regrowth on patterned AlGaAs buffer layersEberl, K. et al. | 1994
- 539
-
Fabrication of SiGe-Si quantum wire structures on a V-groove patterned Si substrate by gas-source Si molecular beam epitaxyUsami, N. et al. | 1994
- 543
-
Electron heating in doped GaAs - is it directional?Brill, B. et al. | 1994
- 547
-
High-mobility transport along single quasi-ID quantum wires formed by cleaved edge overgrowthWegscheider, W. et al. | 1994
- 547
-
High-mobility transport along single quasi-1D quantum wires formed by cleaved edge overgrowthWegscheider, W. / Kang, W. / Pfeiffer, L. N. / West, K. W. et al. | 1994
- 551
-
Observation of Knudsen and Gurzhi transport regimes in a two-dimensional wireMolenkamp, L.W. et al. | 1994
- 555
-
Quantized conductance and its effects on non-linear current-voltage characteristics at 80 K in mesa-etched InAs-AlGaSb quantum wires with split-gateYoh, Kanji et al. | 1994
- 559
-
Transport properties of lateral superlattices grown on vicinal GaAs (100) surfacesLorke, Axel et al. | 1994
- 563
-
MBE fabrication of GaAs quantum wire structures on mesa stripes along the (001) directionLopez, M. et al. | 1994
- 567
-
Alternate method to produce quantum wires using dislocation slippingGuasch, C. et al. | 1994
- 571
-
Formation of N-AlGaAS-GaAs edge quantum wire on (111)B micro facet by MBE and magnetic depopulation of quasi-one-dimensional electron gasNakamura, Y. et al. | 1994
- 575
-
Lateral potential modulation in InAs-AlSb quantum wells by wet etchingUtzmeier, T. et al. | 1994
- 579
-
Optical properties of GaAs quantum dots fabricated by MOCVD selective growthNagamune, Y. et al. | 1994
- 583
-
Fabrication of nanometer-scale conducting silicon wires with a scanning tunneling microscopeCampbell, P.M. et al. | 1994
- 587
-
Selective growth of SiGe nanostructures by low pressure VPESchmidt, G. et al. | 1994
- 591
-
Direct epitaxial growth of (AlGa)As-GaAs quantum wires by orientation-dependent metalorganic vapour phase epitaxyBertram, D. et al. | 1994
- 597
-
Optical properties of GaAs-Al0.3Ga0.7As T-shaped quantum well structure fabricated by glancing angle molecular beam epitaxy on GaAs (100) patterned substratesShimomura, S. et al. | 1994
- 601
-
Coverage dependence of migration potential of cation adatoms on GaAs(001)-(2 x 4) surfaceShiraishi, Kenji et al. | 1994
- 605
-
Raman scattering investigation on the ordered incorporation of Si dopant atoms on GaAs (001) vicinal surfaces during MBE growthRamsteiner, M. et al. | 1994
- 609
-
Disorder-induced Raman scattering of folded phonons in quantum wells and superlatticesRuf, T. et al. | 1994
- 613
-
FTIR spectroscopy of longitudinal confined phonons and plasmon-phonon vibrational modes in GaAsn-AlAsm superlatticesPusep, Yu A. et al. | 1994
- 617
-
Raman scattering study of longitudinal acoustic and optic phonons in InSb/In~1~-~xAl~xSb strained-layer superlatticesGnezdilov, V. P. / Lockwood, D. J. / Webb, J. B. et al. | 1994
- 617
-
Raman scattering study of longitudinal acoustic and optic phonons in InSb-In1 - NAlxSb strained-layer superlatticesGnezdilov, V.P. et al. | 1994
- 621
-
Optical phonon probes of the lateral scale of interface roughness: a theoretical investigationGironcoli, S.de et al. | 1994
- 625
-
Infrared reflectivity of strained GaSb-AlSb superlatticesScamarcio, G. et al. | 1994
- 629
-
Quantitative analysis of strain relaxation and mosaicity in short period SimGen superlattices using reciprocal space mapping by X-ray diffractionKoppensteiner, E. et al. | 1994
- 635
-
Evidence of non-commutativity of band discontinuities in InP-Al(In)As-Ga(In)As heterostructuresLugagne-Delpon, E. et al. | 1994
- 641
-
Above barrier exciton confinement in InGaAs-GaAs multiple-quantum-well structuresCapizzi, M. et al. | 1994
- 645
-
Spectroscopic study of piezoelectric field effects in InGaAs-GaAs multi-quantum wells grown on (111)B oriented GaAs substratesFisher, T.A. et al. | 1994
- 649
-
Optical properties of AlP-GaP short-period superlatticesMorii, Akio et al. | 1994
- 653
-
InGaAs-InP quantum wells with periodic thickness variationBernussi, A.A. et al. | 1994
- 657
-
Determination of built-in electric fields in delta-doped GaAs structures by phase-sensitive photoreflectanceAlperovich, V.L. et al. | 1994
- 661
-
Advantages of a piezoelectric field in a quantum wellEkenberg, U. et al. | 1994
- 665
-
Determination of the basic parameters of pseudomorphic GaInAs quantum wells by means of simultaneous transport and optical investigationsLitwin-Staszewska, E. et al. | 1994
- 669
-
The conduction band spin splitting in type-I strained and unstrained (GaIn)As-InP quantum wellsOmling, P. et al. | 1994
- 673
-
Binding energies of D- ion in GaAs quantum wellChang, Y.H. et al. | 1994
- 677
-
Correlations of the remote impurity charges--a method of 2DEG mobility tuning in GaAs-AlGaAs heterostructuresSuski, T. et al. | 1994
- 681
-
Three-dimensional Boltzmann Bloch theory of miniband transport in superlattices with elastic scatteringGerhardts, Rolf R. et al. | 1994
- 685
-
Domain formation in modulation-doped GaAs-AlxGa1 - xAs heterostructuresDöttling, R. et al. | 1994
- 689
-
Inside a 2D electron system: images of potential and dissipationKnott, R. et al. | 1994
- 693
-
D.c. transport in intense, in-plane terahertz electric fields in AlxGa1 - xAs heterostructures at 300 KAsmar, N.G. et al. | 1994
- 697
-
Microwave miniband NDC in GaInAs-AlInAs superlatticesPalmier, J.F. et al. | 1994
- 701
-
Quasi-one-dimensional ballistic electron transport in in-plane-gated channels at liquid nitrogen temperatureVries, D.K.de et al. | 1994
- 705
-
The dependence of boundary scattering in split-gate quantum wires on the transverse mode numberYamamoto, M. et al. | 1994
- 709
-
Experimental studies of electronic transport in semiconductor quantum dot structuresBird, J.P. et al. | 1994
- 713
-
Photovoltaic effect in quasiballistic electron interferometerBykov, A.A. et al. | 1994
- 717
-
Dimensional transition of weak localization effects in lateral surface superlatticesSelbmann, P.E. et al. | 1994
- 721
-
Luminescence studies of resonant tunneling in a triple barrier structure with strongly coupled quantum wellsTurner, T.S. et al. | 1994
- 725
-
Correlation effects in magnetoluminescence spectra from dense quasi-2D electron gas in selectively doped InGaAs-GaAs quantum wellsKulakovskii, V.D. et al. | 1994
- 729
-
MBE growth of GaAs nanometer-scale ridge quantum wire structures and their structural and optical characterizationsKoshiba, S. et al. | 1994
- 733
-
Interface composition control in InAs-GaSb superlatticesBennett, B.R. et al. | 1994
- 739
-
Lateral piezoelectric fields--a universal feature of strained III-V and II-VI semiconductor heterostructuresIlg, Matthias et al. | 1994
- 743
-
Band discontinuity and effects of Si-insertion layer at (311)A GaAs-AlAs interfaceSaito, T. et al. | 1994
- 747
-
X-ray diffraction analysis of GaAs-AlAs multilayer structures grown by molecular beam epitaxy on (311) and (210) GaAs surfacesTagliente, M.A. et al. | 1994
- 753
-
Folded acoustic phonons in GaAs-AlAs superlattices grown on non-(100)-oriented surfacesSpitzer, J. et al. | 1994
- 757
-
Vibrational properties of Si-Ge superlattices: theory and in-plane Raman scattering experimentsSchorer, R. et al. | 1994
- 761
-
Phonons and electron-phonon interaction in GaAs quantum wiresRossi, F. et al. | 1994
- 765
-
Strained Si-SiGe heterostructures for device applicationsSchäffler, F. et al. | 1994
- 773
-
Capture and emission of electrons in quantum wells under applied electric fieldVinter, B. et al. | 1994
- 779
-
Observation by spin-resolved resonant magnetotunneling of oscillatory Lande factor in two-dimensional electron systemsMendez, E. E. / Nocera, J. / Wang, W. I. et al. | 1994
- 779
-
Observation by spin-resolved resonant magnetotunneling of oscillatory Landé factor in two-dimensional electron systemsMendez, E.E. et al. | 1994
- 783
-
Wire-like incorporation of dopant atoms during MBE growth on vicinal GaAs(001) surfacesDäweritz, L. et al. | 1994
- 789
-
Size effects in the transport properties of thin Sc1 - xErxAs epitaxial layers buried in GaAsBogaerts, R. et al. | 1994
- 793
-
Single-electron tunneling and Coulomb charging effects in ultrasmall double-barrier heterostructuresTewordt, M. et al. | 1994
- 801
-
Hydrostatic pressure sensors based on solid state tunneling devicesBrugger, H. et al. | 1994
- 805
-
Realization of a novel resonant-tunneling hot-electron transistor: competition of ultrafast resonant-tunneling and energy relaxationYang, C.H. et al. | 1994
- 809
-
G-X electron transfer in type II tunneling bi-quantum wellsTackeuchi, Atsushi et al. | 1994
- 813
-
Valley mixing effects on electron tunneling transmission in GaAs-AlAs heterostructuresIvchenko, E.L. et al. | 1994
- 817
-
Luminescence investigation on strained Si1 - xGex-Si modulated quantum wellsFukatsu, S. et al. | 1994
- 825
-
Fermi sea shake-up in quantum well luminescence spectraSkolnick, M.S. et al. | 1994
- 831
-
Optical investigation of superlattice orbits and impurity states in InGaAs-GaAsWarburton, R.J. et al. | 1994
- 835
-
Miniband formation in graded-gap superlatticesGrahn, H.T. et al. | 1994
- 839
-
Stark-ladder transitions in GaAs-AlGaAs superlatticesYamaguchi, M. et al. | 1994
- 843
-
Modulated blue shift of the quantum well electroluminescence in a GaAs-AlAs superlattice resonant tunnelling deviceKuhn, O. et al. | 1994
- 847
-
A metastable state in self-electro-optic effect devices using Stark ladder transitionsHosoda, M. et al. | 1994
- 851
-
"Spin"-flip of holes in asymmetric quantum wellsFerreira, R. et al. | 1994
- 857
-
Interactions between Wannier-Stark statesFerreira, R. et al. | 1994
- 863
-
Resonant coupling between buried single-quantum-well and Wannier-Stark-localization states in a GaAs-AlAs superlatticeTanaka, I. et al. | 1994
- 867
-
Fermi edge singularities in doped quantum wires and quantum wellsRodriguez, F.J. et al. | 1994
- 871
-
Excitonic enhancement of the Fermi edge singularity and recombination kinetics of photogenerated electrons in p-type d-doped GaAs:Be-AlxGa1 - xAs double-heterostructuresWagner, J. et al. | 1994
- 877
-
Free to bound exciton relaxation in (001) and (111) GaAs-GaAlAs quantum wellsMuñoz, L. et al. | 1994
- 881
-
Resonant quenching of exciton photoluminescence in coupled GaAs-AlAs quantum wells: effect of exciton binding energySchneider, Harald et al. | 1994
- 885
-
Pressure dependence of photoluminescence in InxGa1 - xAs-AlyGa1 - yAs strained quantum wells with different widthsLiu, Zhen-Xian et al. | 1994
- 889
-
Optical transitions in GaAs-AlAs superlattices with different miniband widthsFujiwara, K. et al. | 1994
- 893
-
Electromodulation spectroscopy study of a GaAs-GaAlAs asymmetric triangular quantum well structureQiang, H. et al. | 1994
- 899
-
Spectroscopic studies of ultra-thin quantum-wells of GaAs and GaInAs in InP grown by MOVPEHessman, D. et al. | 1994
- 905
-
Optical properties of symmetrically strained (GaIn)As-Ga(PAs) superlattices grown by metalorganic vapour phase epitaxyLutgen, S. et al. | 1994
- 911
-
Optically detected magnetic resonance study of the transition from pseudodirect type-II to type-I GaAs-AlAs superlatticesRomanov, N.G. et al. | 1994
- 915
-
Valence-subband level crossing in GaAs-GaAsP strained-barrier quantum well structures observed by circularly polarized photoluminescence excitation spectroscopyYaguchi, Hiroyuki et al. | 1994
- 919
-
Magneto-optics of dense electron plasmas in modulation-doped GaInAs-AlInAs single quantum wellsZhang, Y.-H. et al. | 1994
- 923
-
High magnetic field effects on the dynamics of excitons in a GaAs quantum wellHaacke, S. et al. | 1994
- 929
-
Optical properties of pseudomorphic (Si)n-(Ge)10 - 11 superlatticesTserbak, C. et al. | 1994
- 933
-
Band-edge photoluminescence of SiGe-strained-Si-SiGe type-II quantum wells on Si(100)Nayak, D.K. et al. | 1994
- 937
-
On the two- and three-dimensional character of the absorption spectra of Si-Ge superlatticesPolatoglou, H.M. et al. | 1994
- 941
-
Systematic study of intersubband absorption in modulation-doped p-type Si-Si1 - xGex quantum wellsFromherz, T. et al. | 1994
- 945
-
Characterization of the valence band offset in p-Si-Si1 - x)Gex-Si by space charge spectroscopySchmalz, K. et al. | 1994
- 949
-
High mobility 2-D hole gases in strained Ge channels on Si substrates studied by magnetotransport and cyclotron resonanceEngelhardt, C.M. et al. | 1994
- 953
-
Magnetotransport and microwave photoresistivity of two-dimensional hole gases in Si Si1 - xGex heterostructuresGuldner, Y. et al. | 1994
- 957
-
Photoluminescence and magnetotransport of 2-D hole gases in Si-SiGe-Si heterostructuresApetz, R. et al. | 1994
- 961
-
A new technique for directly probing the intrinsic tristability and its temperature dependence in a resonant tunneling diodeLerch, M.L.F. et al. | 1994
- 965
-
Mesoscopic effects in resonant tunnelling diodesSakai, J.W. et al. | 1994
- 969
-
Schottky-barrier tunneling spectroscopy of a 2-D electron system in delta-doped Si(100) layersLindolf, J. et al. | 1994
- 973
-
Photohole-induced resonant tunneling of electrons in selectively etched small area GaAs-AlAs double barrier diodesBuhmann, H. et al. | 1994
- 977
-
Interface effects, band overlap and the semimetal to semiconductor transition in InAs-GaSb interband resonant tunnelling diodesKhan-Cheema, U.M. et al. | 1994
- 981
-
InAs-antimonide-based resonant tunneling structures with ternary alloy layersSchulman, J.N. et al. | 1994
- 987
-
Thermally desactivated resonant current in high peak to valley current ratio (69:1) GaAs-GaAlAs resonant tunneling structures: a spectroscopic view of the emitter density of stateLaruelle, F. et al. | 1994
- 991
-
Theoretical analysis of resonant magnetotunneling spectroscopy of holesGoldoni, G. et al. | 1994
- 995
-
Single-electron transistors realized in in-plane-gate and top-gate technologyHaug, R.J. et al. | 1994
- 1001
-
Quasi one-dimensional in-plane-gate field-effect-transistorMeiners, U. et al. | 1994
- 1005
-
Reflection of ballistic electrons by diffusive two-dimensional contactsGeim, A.K. et al. | 1994
- 1011
-
Giant temperature resonances of noise in submicron quantum well structuresStoddart, S.T. et al. | 1994
- 1015
-
Non-linear transport properties of miniband conduction in the presence of crossed electric and magnetic fields: a semi-classical approachAristone, F. et al. | 1994
- 1021
-
Electronic interactions at superconductor-semiconductor interfacesKroemer, Herbert et al. | 1994
- 1027
-
Direct observation of the semimetal to semiconductor transition in crossed band gap superlattices at magnetic fields of up to 150 TBarnes, D.J. et al. | 1994
- 1031
-
Magnetotransport properties of MBE-grown magnetic superlattices of Mn-based intermetallics on GaAs heterostructuresTanaka, M. et al. | 1994
- 1037
-
Studies of GaSb-capped InAs-AlSb quantum wells by resonant Raman scatteringWagner, J. et al. | 1994
- 1041
-
Luminescence up-conversion by Auger process at InP AlInAs type II interfacesTitkov, A. et al. | 1994
- 1045
-
High-resolution transmission electron microscopy of heterostructuresCerva, H. et al. | 1994
- 1053
-
Cross-sectional STM on superlattices and the effect of dopingSalemink, H.W.M. et al. | 1994
- 1057
-
The surface evolution and kinetic roughening during homoepitaxy of GaAs (001)Orr, B.G. et al. | 1994
- 1065
-
Zeeman tuning of II-VI-based diluted magnetic semiconductor superlatticesFurdyna, J.K. et al. | 1994
- 1073
-
Novel magnetic phase transition behavior in short period EuTe-PbTe superlatticeChen, J.J. et al. | 1994
- 1077
-
Band offsets and electronic structures of (ZnCdHg)(SSeTe) strained superlatticesNakayama, Takashi et al. | 1994
- 1081
-
Light induced inversion of magnetic hysteresis in CdTe-(Cd,Mn)Te superlatticesKochereshko, V.P. et al. | 1994
- 1087
-
Photomodulation spectroscopy and cyclotron resonance of Cd1 - x)MnxTe-CdTe semimagnetic and strained multi-quantum well structuresShen, S.C. et al. | 1994
- 1091
-
Optical properties of etched GaAs-GaAlAs quantum wires and dotsMarzin, J.Y. et al. | 1994
- 1097
-
Radiative recombination in pseudomorphic InGaAs-GaAs quantum wires grown on nonplanar substratesGrundmann, M. et al. | 1994
- 1101
-
Optical characterization of InGaAs-GaAs quantum dots defined by lateral top barrier modulationSchmidt, A. et al. | 1994
- 1105
-
Electron-phonon scattering rates in quantum wiresKnipp, P.A. et al. | 1994
- 1109
-
Relaxation and radiative decay of excitons in GaAs quantum dotsBockelmann, U. et al. | 1994
- 1113
-
Determination of band-edge offset by weak field Hall measurement on MBE PbSe-PbEuSe multi-quantum well structures on KClShi, Z. et al. | 1994
- 1117
-
Static and dynamical properties of the bound magnetic polaron in CdTe-Cd1 - xMnxTe quantum wellsBoudinet, P. et al. | 1994
- 1121
-
Time resolved optical study of vertical transport in Cd 0.82)Mn0.18Te-CdTe superlatticesRoussignol, Ph et al. | 1994
- 1125
-
Electron subband structure of HgCdTe metal-insulator-semiconductor heterostructuresChu, Junhao et al. | 1994
- 1129
-
Zeeman studies of CdTe-Cd1 - xMnxTe multiquantum wellsJackson, S. et al. | 1994
- 1133
-
Time-resolved photoluminescence studies of stimulated emission and exciton dynamics in ZnSe-ZnS0.18Se0.82 superlatticesStevens, C.J. et al. | 1994
- 1137
-
Strain, confinement, carrier dynamics and high density effects in ZnSe-ZnMnSe-quantum structuresKreller, F. et al. | 1994
- 1141
-
PbSrS MQW lasers and the effect of quantum well on operation temperatureIshida, A. et al. | 1994
- 1145
-
Electronic structure of thin Si layers in CaF2: hybridization versus confinementFasolino, A. et al. | 1994
- 1149
-
Coulomb attraction in optical spectra of quantum discsAdolph, B. et al. | 1994
- 1153
-
Electronic properties and electron-phonon interaction in an array of anisotropic parabolic quantum dots in the presence of a magnetic fieldHaupt, R. et al. | 1994
- 1159
-
Monte-Carlo calculation of few-electron systems in quantum dotsBolton, F. et al. | 1994
- 1163
-
Spectral luminescence enhancement in three-dimensional optical microcavities formed by GaAs microcrystalsJuen, S. et al. | 1994
- 1167
-
Tailoring of the carrier capture efficiency of a quantum wellGerard, J.M. et al. | 1994
- 1171
-
Wannier-Stark states in nanostructuresFagotto, E.A.M. et al. | 1994
- 1175
-
Multi-phonon relaxation of electrons in a semiconductor quantum dotInoshita, T. et al. | 1994
- 1179
-
Ground state properties of interacting electrons in semiconductor quantum dots: exact and unrestricted Hartree-Fock resultsMartin-Moreno, L. et al. | 1994
- 1183
-
Strong lateral quantization effects in the luminescence of InGaAs-InP quantum wiresIls, P. et al. | 1994
- 1187
-
GaAs-AlGaAs quantum well infrared photodetectorsMiyatake, T. et al. | 1994
- 1191
-
New optical absorption and photocurrent reversal phenomena induced by localized continuum resonances in quantum well heterostructuresSirtori, Carlo et al. | 1994
- 1195
-
Landau levels of Bragg confined electrons and holesZahler, M. et al. | 1994
- 1199
-
Long lived photoexcited electron-hole pairs in modulation doped GaAs-AlGaAs quantum wells studied by intersubband spectroscopyGarini, Y. et al. | 1994
- 1203
-
Electron transport in InAs-Ga1 - xInxSb superlatticesHoffman, C.A. et al. | 1994
- 1207
-
Comparison of far-infrared- and DC-conductivity of electron systems laterally patterned by low-energy ion beam exposureLettau, C. et al. | 1994
- 1211
-
Novel tunable far infrared detector based on a quantum ballistic channelFedichkin, L. et al. | 1994
- 1213
-
Cyclotron FIR emission from hot electrons in GaAs-GaAlAs heterostructuresZawadzki, W. et al. | 1994
- 1217
-
Resonant magneto-polarons in strongly-coupled superlatticesPeeters, F.M. et al. | 1994
- 1221
-
Far-infrared response of quantum dots: from few electron excitations to magnetoplasmonsPfannkuche, D. et al. | 1994
- 1227
-
Cyclotron and intersubband resonance studies in (001) and piezoelectric (111) InAs-(Ga,In)Sb superlatticesLakrimi, M. et al. | 1994
- 1231
-
Magnetic field tuned transition of Aharonov-Bohm oscillations from hc-e to hc-2e periodicity in the array of AlGaAs-GaAs ringsGusev, G.M. et al. | 1994
- 1235
-
Negative conductance at THz frequencies in multi-well structuresTruscott, W.S. et al. | 1994
- 1239
-
Perpendicular transport through rough interfaces in the metallic regimeBrataas, Arne et al. | 1994
- 1243
-
Giant third-order nonlinear susceptibilities for in-plane far-infrared excitation of single InAs quantum wellsMarkelz, A.G. et al. | 1994
- 1247
-
Enhancement of free-to-bound transitions due to resonant electron capture in Be-doped AlGaAs-GaAs quantum wellsMuraki, K. et al. | 1994
- 1251
-
Constructive superposition of field- and carrier induced absorption changes in hetero-n-i-p-i structuresKneissl, M. et al. | 1994
- 1255
-
Polarization of the spontaneous radiation of stressed laser heterostructuresPtashchenko, A.A. et al. | 1994
- 1259
-
Bistability effect in laser-transistor resonant-tunneling structureRyzhii, V. et al. | 1994
- 1263
-
Optoelectronic properties of (001) and (111) lattice-matched and strained quantum wire lasers--comparison with quantum well lasersVurgaftman, Igor et al. | 1994
- 1269
-
Photomodulation spectroscopy of narrow minibands in the continuum of multi quantum wellsOiknine-Schlesinger, J. et al. | 1994
- 1273
-
Intersubband lifetime in quantum wells with transition energies above and below the optical phonon energyFaist, Jerome et al. | 1994
- 1277
-
Miniband dispersion, critical points, and impurity bands in superlattices: an infrared absorption studyHelm, M. et al. | 1994
- 1281
-
Inelastic light scattering by electrons in GaAs quantum wires: spin-density, charge-density and single-particle excitationsSchmeller, A. et al. | 1994
- 1285
-
Tunable far infrared absorption in logarithmically graded quantum wellsHopkins, P.F. et al. | 1994
- 1289
-
Widely tuneable quantum wire arrays in MISFET-type heterojunctions with a stacked gateHertel, G. / Drexler, H. / Hansen, W. / Schmeller, A. et al. | 1994
- 1289
-
Widely tunable quantum wire arrays in MlSFET-type heterojunctions with a stacked gateHertel, G. et al. | 1994
- 1293
-
Infrared spectroscopy of lateral-density-modulated 2DES in InAs-AlSb quantum wellsSundaram, M. et al. | 1994
- 1297
-
Microdisk lasersLevi, A.F.J. et al. | 1994
- 1303
-
GaAs-AlAs and Si-SiGe quantum well structures for applications in nonlinear opticsShaw, M.J. et al. | 1994
- 1307
-
Charge transfer and electroabsorption in an electric field tunable double quantum well structureBernhard, K. et al. | 1994
- 1311
-
Strained InAs-Ga0.47In0.53As quantum-well heterostructures grown by molecular-beam epitaxy for long-wavelength laser applicationsTournié, Eric et al. | 1994
- 1315
-
Feasibility of room-temperature operation of tunable coupled-quantum-well lasersOgawa, M. et al. | 1994
- 1321
-
Detection of Bloch oscillations in a semiconductor superlattice by time-resolved terahertz spectroscopy and degenerate four-wave mixingWaschke, Christian et al. | 1994
- 1327
-
Femtosecond degenerate four-wave-mixing on unstrained (InGa)As-InP multiple-quantum-wells using an optical parametric oscillatorAlbrecht, T.F. et al. | 1994
- 1333
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Time resolved spectroscopy of electron decay in coupled quantum wells--observation of relaxation induced slow-downBar-Joseph, I. et al. | 1994
- 1337
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Modulation of Wannier-Stark transitions by miniband Franz-Keldysh oscillations in strongly coupled GaAs-AlAs superlatticesSchmidt, K.H. et al. | 1994
- 1341
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Photonic bandgap of two-dimensional dielectric crystalsGerard, J.M. et al. | 1994
- xix
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Organising committee, program committee, advisory committee, sponsors| 1994
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Preface| 1994
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Organising Committee, Program Committee, Advisory Committee and Sponsors| 1994