High-TC-based Josephson-junctions and SQUIDs by mechanically induced growth disorder (French)
- New search for: Schmitt, M.
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In:
Journal de physique / 4
;
4
, 6
; C6
;
1994
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ISSN:
- Article (Journal) / Print
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Title:High-TC-based Josephson-junctions and SQUIDs by mechanically induced growth disorder
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Contributors:
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Published in:Journal de physique / 4 ; 4, 6 ; C6
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Publisher:
- New search for: EDP Sciences
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Place of publication:Les Ulis
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Publication date:1994
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ISSN:
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ZDBID:
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Type of media:Article (Journal)
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Type of material:Print
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Language:French
- New search for: 31.00 / 33.00
- Further information on Basic classification
- New search for: 250/3400
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Keywords:
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Table of contents – Volume 4, Issue 6
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
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Tunable infrared photoemission sensor on silicon using SiGe-Si and silicide-Si epitaxial layersSagnes, I. et al. | 1994
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Composite bolometer based on high temperature superconducting Bi2Sr2CaCu2O8+x crystals for application in the far infraredEpifani, M. et al. | 1994
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Processing of DC SQUIDs for radiofrequency amplificationChicault, R. et al. | 1994
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AUTHOR INDEX| 1994
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Measurement of the bandgap narrowing in the base of Si homojunction and Si-Si1-xGex heterojunction bipolar transistors from the temperature dependence of the collector currentAshburn, P. et al. | 1994
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A 12 GHz oscillator based on a GaAs HEMT integrated to a HTS resonatorBorghs, G. et al. | 1994
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Performances and physical mechanisms in sub-0.1 mm gate length LDD MOSFETs at low temperatureBalestra, F. et al. | 1994
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Temperature scaling concept of MOSFETMasu, K. et al. | 1994
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Study of saturation velocity overshoot in deep submicron silicon MOSFETS from liquid helium up to room temperatureRais, K. et al. | 1994
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Josephson voltage standard microwave circuit driven at 10 GHzMeyer, H.-G. et al. | 1994
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DC characteristics of gate-all-around (GAA) silicon-on-insulator MOSFETs at cryogenic temperaturesSimoen, E. et al. | 1994
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Low temperature operation of silicon-on-insulator invertersSimoen, E. et al. | 1994
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High-injection barrier effects in SiGe HBTs operating at cryogenic temperaturesCressler, J.D. et al. | 1994
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Modelling heavy doping effects for low temperature device simulationsSokolic, S. et al. | 1994
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Low temperature low frequency noise in oxide and reoxidized-nitrided oxide filmsDivakaruni, R. et al. | 1994
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High TC superconductive thin films on semiconductor substratesLecoeur, P. et al. | 1994
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New elements for analysis of series arrays of superconducting junctions for submillimeter heterodyne detectionFebvre, P. et al. | 1994
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Room and low temperature electrical measurements for the interface characterization of titanium disilicides on silicon from multilayer titanium-silicon structuresRevva, P. et al. | 1994
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Operation of SiGe bipolar technology at cryogenic temperaturesCressler, J.D. et al. | 1994
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Collapse and large signal modelling of GaAs field effect transistors at 77 KVerdier, J. et al. | 1994
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Measurement of the I-V characteristics of superconducting dipoles: automatic compensation of low frequency driftLesquey, E. et al. | 1994
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Low temperature low voltage operation of HEMTs on InPSylvestre, A. et al. | 1994
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On the determination of the effective channel length of MOSFETSPatel, N. et al. | 1994
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Physics of the long range proximity effectDevyatov, I.A. et al. | 1994
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Hot carrier effects in sub-0.1 mm gate length MOSFETs between room and liquid helium temperaturesBalestra, F. et al. | 1994
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Modelling of fluxon dynamics in stacked Josephson tunnel junctionsUstinov, A.V. et al. | 1994
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High electric field transport effects on low temperature operation of pseudomorphic HEMTsAniel, F. et al. | 1994
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Recent developments in low temperature infrared detectorsLucas, Ch et al. | 1994
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Preparation of small-area Al-AlOX-Al tunnel junctions in a self-aligned in-line technology and observation of the Coulomb blockadeGötz, M. et al. | 1994
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Series resistance effects in submicron MOS transistors operated from 300 K down to 4.2 KGutiérrez-D, E.A. et al. | 1994
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High-TC-based Josephson-junctions and SQUIDs by mechanically induced growth disorderSchmitt, M. et al. | 1994
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Quasiparticle lifetimes and tunneling times in an SS'IS"S tunnel junction detectorGolubov, A.A. et al. | 1994
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Si vertical JFET at low temperatures; I-V characteristics and low frequency noiseChroboczek, J.A. et al. | 1994
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Numerical simulation of SiGe HBT's at cryogenic temperaturesRichey, D.M. et al. | 1994
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Hot-carrier degradation of CMOS inverters and ring oscillators at 77 KHsu, J.-T. et al. | 1994
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Modeling of self-heating effects in thin-film SOI MOSFET's as a function of temperatureJomaah, J. et al. | 1994
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Low temperature performance of self-aligned "Etched Polysilicon" emitter pseudo-heterojunction bipolar transistorsGiroult-Matlakowski, G. et al. | 1994
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Penetration depth extraction in high temperature superconducting microwave transmission linesLadret, D. et al. | 1994
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Magnetometers based on (double) relaxation oscillation SQUIDsDuuren, M.J.van et al. | 1994
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A 350 to 700 GHz open structure SIS receiver for submm. radioastronomyRothermel, H. et al. | 1994
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Low temperature CMOS-compatible JFET'sVollrath, J. et al. | 1994
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GaAs JFETs intended for deep cryogenic VLWIR readout electronicsCunningham, T.J. et al. | 1994
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GaAs MESFETs and monolithic circuits in cryogenic environmentsCamin, D.V. et al. | 1994
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Several alternative approaches to the manufacturing of HTS Josephson junctionsVillegier, J.C. et al. | 1994
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Biepitaxial Josephson junctions and SuFET technology for the preparation of HTS-JoFETsPetersen, K. et al. | 1994
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High mobility Si1-xGex PMOS transistors to 5 KScott, J.A. et al. | 1994