A High Power Light Triggered Triac with a Novel Light Sensitive Structure (English)
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In:
IEEE transactions on electron devices
;
42
, 4
; 713-719
;
1995
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ISSN:
- Article (Journal) / Print
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Title:A High Power Light Triggered Triac with a Novel Light Sensitive Structure
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Contributors:
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Published in:IEEE transactions on electron devices ; 42, 4 ; 713-719
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Publisher:
- New search for: IEEE
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Place of publication:New York, NY
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Publication date:1995
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ISSN:
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ZDBID:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
- New search for: 53.50 / 53.00 / 52.50 / 54.20
- Further information on Basic classification
- New search for: 770/5670
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Keywords:
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Source:
Table of contents – Volume 42, Issue 4
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 577
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Properties of n-Type Tetrahedral Amorphous Carbon (ta-C)-p-Type Crystalline Silicon Heterojunction DiodesVeerasamy, V.S. et al. | 1995
- 586
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A Charge Control and Current-Voltage Model for Inverted MODFET'sAnwar, A.F.M. et al. | 1995
- 591
-
The Interdependence Between the Collapse Phenomenon and the Avalanche Breakdown in AlGaAs-GaAs Power Heterojunction Bipolar TransistorsLiu, W. et al. | 1995
- 598
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Inverse Modeling and Its Application in the Design of High Electron Mobility TransistorsAhn, H. et al. | 1995
- 605
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Monte Carlo Determination of the Intrinsic Small-Signal Equivalent Circuit of MESFET'sGonzález, T. et al. | 1995
- 612
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Modeling of Current-Voltage Characteristics for Strained and Lattice Matched HEMT's on InP Substrate Using a Variational Charge Control ModelGuan, L. et al. | 1995
- 618
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Monolithic HEMT-HBT Integration by Selective MBEStreit, D.C. et al. | 1995
- 624
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Application of the TLM Method to Transient Thermal Simulation of Microwave Power TransistorsWebb, P.W. et al. | 1995
- 632
-
Optical Devices from AlGaAs-GaAs HBTs Heavily Doped with Amphoteric SiArai, Y. et al. | 1995
- 639
-
High Responsivity GaInAs PIN Photodiode by Using Erbium GetteringHo, W.-J. et al. | 1995
- 646
-
Theoretical Analysis of Transient Behavior of Optoelectronic Integrated DevicesZhu, Y. et al. | 1995
- 652
-
Photo Response Analysis in CCD Image Sensors with a VOD StructureKawai, S. et al. | 1995
- 656
-
A Simple Analytical Model of the Tunnel MIS Emitter Auger TransistorVexler, M.I. et al. | 1995
- 662
-
Effect of Trap Location and Trap-Assisted Auger Recombination on Silicon Solar Cell PerformancePang, S.K. et al. | 1995
- 669
-
A Study of Deep-Submicron MOSFET Scaling Based on Experiment and SimulationHu, H. et al. | 1995
- 678
-
Modeling of the Intrinsic Retention Characteristics of FLOTOX EEPROM Cells Under Elevated Temperature ConditionsPapadas, C. et al. | 1995
- 683
-
Electromigration-Induced Integration Limits on the Future ULSI's and the Beneficial Effects of Lower Operation TemperaturesYi, Y.-W. et al. | 1995
- 689
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Pulse Current Trimming of Polysilicon ResistorsFeldbaumer, D.W. et al. | 1995
- 697
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Titanium Silicide-Silicon Nonohmic Contact Resistance for NFET's, PFET's, Diffused Resistors, and NPN's in a BiCMOS TechnologyHook, T.B. et al. | 1995
- 704
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An Improvement of Hot-Carrier Reliability m the Stacked Nitride-Oxide Gate n- and p-MISFET'sMomose, H.S. et al. | 1995
- 704
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An Improvement of Hot-Carrier Reliability in the Stacked Nitride-Oxide Gate n- and p-MISFET'sMomose, H. S. / Morimoto, T. / Ozawa, Y. / Yamabe, K. et al. | 1995
- 713
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Performance and Potential of Ultrathin Accumulation-Mode SIMOX MOSFET'sFaynot, O. et al. | 1995
- 713
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A High Power Light Triggered Triac with a Novel Light Sensitive StructureZhao, S.-Q. et al. | 1995
- 720
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Low-Frequency Noise in Polysilicon Emitter Bipolar TransistorsMarkus, H.A.W. et al. | 1995
- 728
-
A Physical Charge-Based Model for Non-Fully Depleted SOI MOSFET's and Its Use in Assessing Floating-Body Effects in SOI CMOS CircuitsSuh, D. / Fossum, J. G. et al. | 1995
- 728
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A Physical Charge-Based Model for Non-Fully Depleted SOI MOSFET's and Its Use in Assessing Floating-Body Effects m SOI CMOS CircuitsSuh, D. et al. | 1995
- 738
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Mechanism of interface trap-induced drain leakage current in off-state n-MOSFET'sChang, T.E. / Huang, C. / Wang, T. et al. | 1995
- 738
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Mechanisms of Interface Trap-Induced Drain Leakage Current in Off-State n-MOSFET'sChang, T.-E. et al. | 1995
- 744
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Response of Photovoltaic Cells to Pulsed Laser IlluminationLowe, R.A. et al. | 1995
- 752
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Impact Ionization and Light Emission in InAlAs-InGaAs Heterostructure Field-Effect TransistorsBerthold, G. et al. | 1995
- 760
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High Field Related Thin Oxide Wearout and BreakdownDumin, D.J. et al. | 1995
- 780
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Techniques for Maintaining Design Efficiency When Operating Klystron Amplifiers at Levels Below the Maximum Output PowerTallerico, P. et al. | 1995
- 785
-
An Analytical Delay Expression for Source-Coupled FET Logic (SCFL) InvertersSano, E. et al. | 1995
- 787
-
Special Issue of IEEE Transactions on Electron Devices| 1995