Contents of Applied Physics B Volume 61, Number 4, October 1995 (English)
In:
Applied physics / A
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61
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1995
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- Article (Journal) / Print
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Title:Contents of Applied Physics B Volume 61, Number 4, October 1995
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Published in:Applied physics / A ; 61, 4 ; A5
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Publisher:
- New search for: Springer
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Place of publication:Berlin
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Publication date:1995
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
- New search for: 51.00 / 33.60 / 53.09
- Further information on Basic classification
- New search for: 020/3475/3485
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Keywords:
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Classification:
BKL: 51.00 Werkstoffkunde: Allgemeines / 33.60 Kondensierte Materie: Allgemeines / 53.09 Werkstoffe der Elektrotechnik Local classification TIB: 020/3475/3485 -
Source:
Table of contents – Volume 61, Issue 4
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 339
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Time-resolved study of ArF-excimer-laser ablation processes of polymethylmethacrylateHopp, B. / Csete, M. / Szabó, G. / Bor, Zs. et al. | 1995
- 347
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Oscillations in laser direct writing of W from WCl6 and H2: A theoretical analysisArnold, N. / Kargl, P. B. / Kullmer, R. / Bäuerle, D. et al. | 1995
- 347
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Oscillations in laser direct writing of W from WCI6 and H2: A theoretical analysisArnold, N. et al. | 1995
- 353
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Energies of carbon plasma beams in the deposition of diamond-like coatings with the pulsed-arc-discharge methodSalo, J. / Lappalainen, R. / Anttila, A. et al. | 1995
- 357
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Scanning capacitance microscopy and spectroscopy applied to local charge modifications and characterization of nitride-oxide-silicon heterostructuresDreyer, M. / Wiesendanger, R. et al. | 1995
- 363
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Ion-implantation doping of crystalline 6H-SiCSonntag, H. / Kalbitzer, S. et al. | 1995
- 369
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Barrier-height non-uniformities of PtSi/Si(111) Schottky diodesLahnor, P. / Seiter, K. / Schulz, M. / Dorsch, W. / Scholz, R. et al. | 1995
- 377
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Application of BaF2-B2O3-GeO2-SiO2 glasses to metal-oxide-silicon field-effect transistorsKobayashi, K. et al. | 1995
- 381
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Hydrogen implantation and diffusion in silicon and silicon dioxideFink, D. / Krauser, J. / Nagengast, D. / Murphy, T. Almeida / Erxmeier, J. / Palmetshofer, L. / Bräunig, D. / Weidinger, A. et al. | 1995
- 389
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Hall mobility of undoped n-type conducting strontium titanate single crystals between 19 K and 1373 KMoos, R. / Menesklou, W. / Härdtl, K. H. et al. | 1995
- 397
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On the validity of the amphoteric-defect model in gallium arsenide and a criterion for Fermi-level pinning by defectsChen, C. -H. / Tan, T. Y. et al. | 1995
- 407
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Study on the coercivity of granular solid ironWang, J. P. / Han, D. -H. / Luo, H. -L. / Lu, Q. -X. / Sun, Y. -W. et al. | 1995
- 415
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Magnetization measurements on some rare-earth iron garnetsLataifeh, M. S. / Al-sharif, A. et al. | 1995
- 419
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Matrix effect of bombardment-induced Gibbsian segregation on Cu depletion at a Cu x Ni100−x subsurfaceZheng, L. -P. / Li, R. -S. / Xia, X. -Q. / Li, M. -Q. / Li, M. -Y. et al. | 1995
- 419
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Matrix effect of bombardment-induced Gibbsian segregation on Cu depletion at a Cu~xNi~1~0~0~-~kappa subsurfaceZheng, L.-P. / Li, R.-S. / Xia, X.-Q. / Li, M.-Q. et al. | 1995
- 425
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Langmuir-Blodgett film and nematic interfaceAlexe-Ionescu, A. L. / Barberi, R. / Barbero, G. / Bonvent, J. J. / Giocondo, M. et al. | 1995
- 425
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Langmuir-Blodgett film and nematic interface. Influence of the film density on the nematic orientationAlexe-Ionescu, A.L. et al. | 1995
- 431
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Molecular-dynamics simulation of the Ag/Ni interfaceLi, M. / Wang, Y. et al. | 1995
- 435
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Two-channel waveguide modulator based on surface wave propagating in a semiconductor-metal thin-film structureOstrikov, K. N. / Osmayev, O. A. / Azarenkov, N. A. et al. | 1995
- 435
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Two-channel waveguide modulator based on surface wave propagation in a semiconductor-metal thin-film structureOstrikov, K.N. / Osmayev, O.A. / Azarenkov, N.A. et al. | 1995
- 441
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Theoretical study of thermal diffusivity of superlattices in measurements using “mirage” techniqueCheng, J. -C. / Li, F. -H. / Guo, L. / Zhang, S. Y. et al. | 1995
- 447
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Electroacoustics in a silicon solar cellFagotto, E. A. M. / Decker, F. / Fracastoro-Decker, M. et al. | 1995
- A5
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Forthcoming papers| 1995
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Contents of Applied Physics B Volume 61, Number 4, October 1995| 1995