Compound Semiconductor Devices - A Two-Step-Recess Process Based on Atomic-Layer Etching for High-Performance In0.52Al0.48As-In0.53Ga0.47As p-HEMTs (English)
- New search for: Kim, T.-W.
- New search for: Kim, T.-W.
- New search for: Kim, D.-H.
- New search for: Park, S.-D.
- New search for: Shin, S.H.
- New search for: Jo, S.J.
- New search for: Song, H.-J.
- New search for: Park, Y.M.
- New search for: Bae, J.-O.
- New search for: Kim, Y.-W.
- New search for: Yeom, G.-Y.
- New search for: Jang, J.-H.
- New search for: Song, J.-I.
In:
IEEE transactions on electron devices
;
55
, 7
; 1577-1584
;
2008
-
ISSN:
- Article (Journal) / Print
-
Title:Compound Semiconductor Devices - A Two-Step-Recess Process Based on Atomic-Layer Etching for High-Performance In0.52Al0.48As-In0.53Ga0.47As p-HEMTs
-
Contributors:Kim, T.-W. ( author ) / Kim, D.-H. / Park, S.-D. / Shin, S.H. / Jo, S.J. / Song, H.-J. / Park, Y.M. / Bae, J.-O. / Kim, Y.-W. / Yeom, G.-Y.
-
Published in:IEEE transactions on electron devices ; 55, 7 ; 1577-1584
-
Publisher:
- New search for: IEEE
-
Place of publication:New York, NY
-
Publication date:2008
-
ISSN:
-
ZDBID:
-
Type of media:Article (Journal)
-
Type of material:Print
-
Language:English
- New search for: 53.50 / 53.00 / 52.50 / 54.20
- Further information on Basic classification
- New search for: 770/5670
-
Keywords:
-
Classification:
-
Source:
Table of contents – Volume 55, Issue 7
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1577
-
Compound Semiconductor Devices - A Two-Step-Recess Process Based on Atomic-Layer Etching for High-Performance In0.52Al0.48As-In0.53Ga0.47As p-HEMTsKim, T.-W. et al. | 2008
- 1577
-
A Two-Step-Recess Process Based on Atomic-Layer Etching for High-Performance $\hbox{In}_{0.52}\hbox{Al}_{0.48}\hbox{As}\hbox{/}\hbox{In}_{0.53} \hbox{Ga}_{0.47}\hbox{As}$ p-HEMTsTae-Woo Kim, / Dae-Hyun Kim, / Sang-Duk Park, / Seung Heon Shin, / Seong June Jo, / Ho-Jin Song, / Young Min Park, / Jeoun-Oun Bae, / Young-Woon Kim, / Geun-Young Yeom, et al. | 2008
- 1577
-
A Two-Step-Recess Process Based on Atomic-Layer Etching for High-Performance Formula Not Shown p-HEMTsKim, T.-W. / Kim, D.-H. / Park, S.-D. / Shin, S.H. / Jo, S.J. / Song, H.-J. / Park, Y.M. / Bae, J.-O. et al. | 2008
- 1585
-
Surface Acoustic Waves in Reverse-Biased AlGaN/GaN HeterostructuresShigekawa, N. / Nishimura, K. / Yokoyama, H. / Hohkawa, K. et al. | 2008
- 1592
-
Investigation of High-Electric-Field Degradation Effects in AlGaN/GaN HEMTsFaqir, M. / Verzellesi, G. / Meneghesso, G. / Zanoni, E. / Fantini, F. et al. | 2008
- 1603
-
Methodology for Small-Signal Model Extraction of AlGaN HEMTsShealy, J.R. / Jiali Wang, / Brown, R. et al. | 2008
- 1614
-
Three-Dimensional Packaging Technology for Stacked DRAM With 3-Gb/s Data TransferKawano, M. / Takahashi, N. / Kurita, Y. / Soejima, K. / Komuro, M. / Matsui, S. et al. | 2008
- 1614
-
Material Processing and Packaging - Three-Dimensional Packaging Technology for Stacked DRAM With 3-Gb-s Data TransferKawano, M. et al. | 2008
- 1621
-
Optoelectronics, Displays, and Imaging - Advanced Amorphous Silicon Thin-Film Transistors for AM-OLEDs: Electrical Performance and StabilityKuo, A. et al. | 2008
- 1621
-
Advanced Amorphous Silicon Thin-Film Transistors for AM-OLEDs: Electrical Performance and StabilityKuo, A. / Tae Kyung Won, / Kanicki, J. et al. | 2008
- 1630
-
The Impact of Nitrogen Engineering in Silicon Oxynitride Gate Dielectric on Negative-Bias Temperature Instability of p-MOSFETs: A Study by Ultrafast On-The-Fly Formula Not Shown TechniqueMaheta, V.D. / Olsen, C. / Ahmed, K. / Mahapatra, S. et al. | 2008
- 1630
-
The Impact of Nitrogen Engineering in Silicon Oxynitride Gate Dielectric on Negative-Bias Temperature Instability of p-MOSFETs: A Study by Ultrafast On-The-Fly $I_{\rm DLIN}$ TechniqueMaheta, V.D. / Olsen, C. / Ahmed, K. / Souvik Mahapatra, et al. | 2008
- 1630
-
Reliability - The Impact of Nitrogen Engineering in Silicon Oxynitride Gate Dielectric on Negative-Bias Temperature Instability of p-MOSFETs: A Study by Ultrafast On-The-Fly IDLIN TechniqueMaheta, V.D. et al. | 2008
- 1639
-
Carrier Transportation Mechanism of the Formula Not Shown Structure With Silicon Surface Fluorine ImplantationWu, W.C. / Lai, C.S. / Wang, T.M. / Wang, J.C. / Hsu, C.W. / Ma, M.W. / Lo, W.C. / Chao, T.S. et al. | 2008
- 1639
-
Carrier Transportation Mechanism of the TaN-HfO2-IL-Si Structure With Silicon Surface Fluorine ImplantationWu, W.C. et al. | 2008
- 1639
-
Carrier Transportation Mechanism of the $\hbox{TaN}/ \hbox{HfO}_{2}/\hbox{IL}/\hbox{Si}$ Structure With Silicon Surface Fluorine ImplantationWoei Cherng Wu, / Chao-Sung Lai, / Tzu-Ming Wang, / Jer-Chyi Wang, / Chih Wei Hsu, / Ming Wen Ma, / Wen-Cheng Lo, / Tien Sheng Chao, et al. | 2008
- 1647
-
Stress-Induced Positive Charge in Hf-Based Gate Dielectrics: Impact on Device Performance and a Framework for the DefectZhao, C.Z. / Zhang, J.F. / Mo Huai Chang, / Peaker, A.R. / Hall, S. / Groeseneken, G. / Pantisano, L. / De Gendt, S. / Heyns, M. et al. | 2008
- 1657
-
Methodology for Flatband Voltage Measurement in Fully Depleted Floating-Body FinFETsFerain, I. / Pantisano, L. / O'Sullivan, B.J. / Singanamalla, R. / Collaert, N. / Jurczak, M. / De Meyer, K. et al. | 2008
- 1657
-
Silicon Devices - Methodology for Flatband Voltage Measurement in Fully Depleted Floating-Body FinFETsFerain, I. et al. | 2008
- 1664
-
RF Performance of a Commercial SOI Technology Transferred Onto a Passivated HR Silicon SubstrateLederer, D. / Raskin, J.-P. et al. | 2008
- 1672
-
A Compact Model of Phase-Change Memory Based on Rate Equations of Crystallization and AmorphizationSonoda, K. / Sakai, A. / Moniwa, M. / Ishikawa, K. / Tsuchiya, O. / Inoue, Y. et al. | 2008
- 1682
-
An Analytical Gate Tunneling Current Model for MOSFETs Having Ultrathin Gate OxidesMondal, I. / Dutta, A.K. et al. | 2008
- 1693
-
Compact Layout and Bias-Dependent Base-Resistance Modeling for Advanced SiGe HBTsSchroter, M. / Krause, J. / Lehmann, S. / Celi, D. et al. | 2008
- 1702
-
Characterization of Distribution of Trap States in Silicon-on-Insulator Layers by Front-Gate Characteristics in n-Channel SOI MOSFETsKajiwara, K. / Nakajima, Y. / Hanajiri, T. / Toyabe, T. / Sugano, T. et al. | 2008
- 1708
-
Improving the Retention and Endurance Characteristics of Charge-Trapping Memory by Using Double Quantum BarriersLin, S.H. / Yang, H.J. / Chen, W.B. / Yeh, F.S. / McAlister, S.P. / Chin, A. et al. | 2008
- 1714
-
On the Suitability of a High- $k$ Gate Dielectric in Nanoscale FinFET CMOS TechnologyAgrawal, S. / Fossum, J.G. et al. | 2008
- 1714
-
On the Suitability of a High- Formula Not Shown Gate Dielectric in Nanoscale FinFET CMOS TechnologyAgrawal, S. / Fossum, J.G. et al. | 2008
- 1720
-
A Fully Three-Dimensional Atomistic Quantum Mechanical Study on Random Dopant-Induced Effects in 25-nm MOSFETsXiang-Wei Jiang, / Hui-Xiong Deng, / Jun-Wei Luo, / Shu-Shen Li, / Lin-Wang Wang, et al. | 2008
- 1727
-
Ultralow Temperature Processing and Integration of Dielectric Resonators on Silicon Substrates for System-on-Chip ApplicationsBijumon, P.V. / Freundorfer, A.P. / Sayer, M. / Antar, Y.M.M. et al. | 2008
- 1727
-
Solid-State Device Phenomena - Ultralow Temperature Processing and Integration of Dielectric Resonators on Silicon Substrates for System-on-Chip ApplicationsBijumon, P.V. et al. | 2008
- 1733
-
Investigation of Thermal Crosstalk Between SOI FETs by the Subthreshold Sensing TechniqueShamsa, M. / Solomon, P.M. / Jenkins, K.A. / Balandin, A.A. / Haensch, W. et al. | 2008
- 1741
-
Numerical Study of Flicker Noise in p-Type Si0.7Ge 0.3)-Si Heterostructure MOSFETsChen, C.-Y. et al. | 2008
- 1741
-
Numerical Study of Flicker Noise in p-Type Formula Not Shown Heterostructure MOSFETsChen, C.-Y. / Liu, Y. / Dutton, R.W. / Sato-Iwanaga, J. / Inoue, A. / Sorada, H. et al. | 2008
- 1741
-
Numerical Study of Flicker Noise in p-Type $ \hbox{Si}_{0.7}\hbox{Ge}_{0.3}/\hbox{Si}$ Heterostructure MOSFETsChia-Yu Chen, / Yang Liu, / Dutton, R.W. / Sato-Iwanaga, J. / Inoue, A. / Sorada, H. et al. | 2008
- 1749
-
Solid-State Power and High Voltage - Double-Epilayer Structure for Low Drain Voltage Rating n-Channel Power Trench MOSFET DevicesLi, M. et al. | 2008
- 1749
-
Double-Epilayer Structure for Low Drain Voltage Rating n-Channel Power Trench MOSFET DevicesMinhua Li, / Crellin, A. / Ihsiu Ho, / Qi Wang, et al. | 2008
- 1756
-
New high-voltage (greater-than 1200 V) MOSFET with the charge trenches on partial SOILuo, Xiaorong / Zhang, Bo / Li, Zhaoji et al. | 2008
- 1756
-
New High-Voltage (Formula Not Shown 1200 V) MOSFET With the Charge Trenches on Partial SOILuo, X. / Zhang, B. / Li, Z. et al. | 2008
- 1756
-
New High-Voltage ( $>$ 1200 V) MOSFET With the Charge Trenches on Partial SOIXiaorong Luo, / Bo Zhang, / Zhaoji Li, et al. | 2008
- 1762
-
Time Response of Two-Dimensional Gas-Based Vertical Field Metal–Semiconductor–Metal PhotodetectorsXia Zhao, / Currie, M. / Cola, A. / Quaranta, F. / Gallo, E. / Spanier, J.E. / Nabet, B. et al. | 2008
- 1762
-
Solid-State Sensors and Actuators - Time Response of Two-Dimensional Gas-Based Vertical Field Metal-Semiconductor-Metal PhotodetectorsZhao, X. et al. | 2008
- 1771
-
Investigation of the Nonthermal Mechanism of Efficiency Rolloff in InGaN Light-Emitting DiodesYi Yang, / Xian An Cao, / Chunhui Yan, et al. | 2008
- 1771
-
BRIEFS - Investigation of the Nonthermal Mechanism of Efficiency Rolloff in InGaN Light-Emitting DiodesYang, Y. et al. | 2008
- 1776
-
A Physical-Based PSPICE Compact Model for Poly(3-hexylthiophene) Organic Field-Effect TransistorsMeixner, R.M. / Gobel, H.H. / Haidi Qiu, / Ucurum, C. / Klix, W. / Stenzel, R. / Yildirim, F.A. / Bauhofer, W. / Krautschneider, W.H. et al. | 2008
- 1782
-
Effects of Switching Parameters on Resistive Switching Behaviors of Polycrystalline Formula Not Shown :Cr-Based Metal-Oxide-Metal StructuresPark, J.-W. / Yang, M.K. / Jung, K. / Lee, J.-K. et al. | 2008
- 1782
-
Effects of Switching Parameters on Resistive Switching Behaviors of Polycrystalline $\hbox{SrZrO}_{3}$ :Cr-Based Metal–Oxide–Metal StructuresJae-Wan Park, / Min Kyu Yang, / Kyooho Jung, / Jeon-Kook Lee, et al. | 2008
- 1782
-
Effects of Switching Parameters on Resistive Switching Behaviors of Polycrystalline SrZrO3:Cr-Based Metal-Oxide-Metal StructuresPark, J.-W. et al. | 2008
- 1787
-
ANNOUNCEMENTS - Call for Papers -- Special Issue on Solid-State Image Sensors| 2008
- 1787
-
Special issue of IEEE Transaction on Electron Devices on Solid State Image Sensors| 2008
- 1788
-
Call for Nominations -- Electron Devices Society Administrative Committee| 2008
- 1788
-
Electron Devices Society Administrative Committee| 2008
- C1
-
Table of contents| 2008
- C2
-
IEEE Transactions on Electron Devices publication information| 2008
- C3
-
IEEE Transactions on Electron Devices information for authors| 2008