ZnO Thin-Film Transistor Ring Oscillators With 31-ns Propagation Delay (English)
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- New search for: Nelson, S.F.
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In:
IEEE electron device letters
;
29
, 7
; 721-723
;
2008
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ISSN:
- Article (Journal) / Print
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Title:ZnO Thin-Film Transistor Ring Oscillators With 31-ns Propagation Delay
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Contributors:Sun, J. ( author ) / Mourey, D.A. / Zhao, D. / Park, S.K. / Nelson, S.F. / Levy, D.H. / Freeman, D. / Cowdery-Corvan, P. / Tutt, L. / Jackson, T.N.
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Published in:IEEE electron device letters ; 29, 7 ; 721-723
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Publisher:
- New search for: IEEE
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Place of publication:New York, NY
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Publication date:2008
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ISSN:
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ZDBID:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
- New search for: 770/5670
- New search for: 53.51
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Table of contents – Volume 29, Issue 7
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 655
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LETTERS - Compound Semiconductor Devices - Low Turn-On Voltage and High-Current InP-In0.37Ga0.63 As0.89Sb0.11-In0.53 Ga0.47As Double Heterojunction Bipolar TransistorsChen, S.-H. et al. | 2008
- 658
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Improvement of External Extraction Efficiency in GaN-Based LEDs by SiO2 Nanosphere LithographyHsieh, M.-Y. et al. | 2008
- 661
-
AIN-GaN Insulated-Gate HEMTs With 2.3 A-mm Output Current and 480 mS-mm TransconductanceZimmermann, T. et al. | 2008
- 665
-
A Simple Current Collapse Measurement Technique for GaN High-Electron Mobility TransistorsJoh, J. et al. | 2008
- 668
-
AlGaN-GaN Recessed MIS-Gate HFET With High-Threshold-Voltage Normally-Off Operation for Power Electronics ApplicationsOka, T. et al. | 2008
- 671
-
Novel Delta-Doped InAlGaP-GaAs Heterojunction Bipolar TransistorLin, Y.-S. et al. | 2008
- 674
-
Materials and Processing - Forming Gas Annealing Characteristics of Germanium-on-Insulator SubstratesJin, H.-Y. et al. | 2008
- 677
-
Drift Modeling of Electrically Controlled Nanoscale Metal-Oxide Gas SensorsVelasco-Velez, J.J. et al. | 2008
- 681
-
Improvement of Resistive Switching in Cu2O Using New RESET ModeYin, M. et al. | 2008
- 684
-
Electrical Properties of Amorphous Bi5Nb3O15 Thin Film for RF MIM CapacitorsCho, K.-H. et al. | 2008
- 688
-
Carbon-Doped Polysilicon Floating Gate for Improved Data Retention and P-E Window of Flash MemoryPu, J. et al. | 2008
- 691
-
Fabrication and Characterization of Carbon Nanotubes Integrated on Field-Emission DiodeTsai, J.T.H. et al. | 2008
- 694
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Effect of the Electrode Material on the Electrical-Switching Characteristics of Nonvolatile Memory Devices Based on Poly(o-anthranilic acid) Thin FilmsLee, D. et al. | 2008
- 698
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Molecular Electronics - Low-Temperature-Processed Inorganic Gate Dielectrics for Plastic-Substrate-Based Organic Field-Effect TransistorsTan, H.S. et al. | 2008
- 701
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Microelectromechanical Systems (MEMS) - A Single-Crystal-Silicon Bulk-Acoustic-Mode Microresonator OscillatorLee, J.E.-Y. et al. | 2008
- 704
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Optoelectronics - Novel Silicon-Carbon (Si:C) Schottky Barrier Enhancement Layer for Dark-Current Suppression in Ge-on-SOI MSM PhotodetectorsAng, K.-W. et al. | 2008
- 708
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Novel NiGe MSM Photodetector Featuring Asymmetrical Schottky Barriers Using Sulfur Co-Implantation and SegregationAng, K.-W. et al. | 2008
- 711
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Hybrid CdSe-ZnS Quantum Dot-InGaN-GaN Quantum Well Red Light-Emitting DiodesHuang, C.-Y. et al. | 2008
- 714
-
Separate Absorption-Charge Multiplication Heterojunction Phototransistors With the Bandwidth-Enhancement Effect and Ultrahigh Gain-Bandwidth Product Under Near Avalanche OperationShi, J.-W. et al. | 2008
- 718
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Silicon Alloys and Thin Film Devices - A Novel Multiple-Gate Polycrystalline Silicon Nanowire Transistor Featuring an Inverse-T GateLin, H.-C. et al. | 2008
- 721
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ZnO Thin-Film Transistor Ring Oscillators With 31-ns Propagation DelaySun, J. et al. | 2008
- 724
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New n-Type TiO2 Transparent Active Channel TFTs Fabricated With a Solution ProcessPark, J.-W. et al. | 2008
- 728
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SiC Varactors for Dynamic Load Modulation of High Power AmplifiersSüdow, M. et al. | 2008
- 731
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Cointegration of In Situ Doped Silicon-Carbon Source and Silicon-Carbon I-Region in P-Channel Silicon Nanowire Impact-Ionization TransistorToh, E.-H. et al. | 2008
- 734
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Modified Threshold Voltage Shift Model in a-Si:H TFTs Under Prolonged Gate Pulse StressLiu, S.-E. et al. | 2008
- 737
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Top-Gate Amorphous Silicon TFT With Self-Aligned Silicide Source-Drain and High MobilityHuang, Y. et al. | 2008
- 740
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Silicon and Elemental Semiconductor Devices - Ultrahigh Capacitance Density for Multiple ALD-Grown MIM Capacitor Stacks in 3-D SiliconKlootwijk, J.H. et al. | 2008
- 743
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The Impact of Stacked Cap Layers on Effective Work Function With HfSiON and SiON Gate DielectricsCho, H.-J. et al. | 2008
- 746
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Ab Initio Modeling of Schottky-Barrier Height Tuning by Yttrium at Nickel Silicide-Silicon InterfaceGeng, L. et al. | 2008
- 750
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Diamond-Like Carbon (DLC) Liner: A New Stressor for P-Channel Multiple-Gate Field-Effect TransistorsTan, K.-M. et al. | 2008
- 753
-
Novel Silicon-Controlled Rectifier (SCR) for High-Voltage Electrostatic Discharge (ESD) ApplicationsLiu, Z. et al. | 2008
- 756
-
Source and Drain Series Resistance Reduction for N-Channel Transistors Using Solid Antimony (Sb) Segregation (SSbS) During SilicidationWong, H.-S. et al. | 2008
- 759
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Surviving Process Variation: Investigation of CNR MOSFETs With Tapered Channels Using Fully Self-Consistent NEGF and Tight-Binding MethodsGuan, X. et al. | 2008
- 762
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Investigation on the Validity of Holding Voltage in High-Voltage Devices Measured by Transmission-Line-Pulsing (TLP)Chen, W.-Y. et al. | 2008
- 765
-
Sub-30-nm FUSI CMOS Transistors Fabricated by Simple Method Without Additional CMP ProcessFukutome, H. et al. | 2008
- 768
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Impact of Process-Induced Strain on Coulomb Scattering Mobility in Short-Channel n-MOSFETsChen, W.P.N. et al. | 2008
- 771
-
Effect of Drift-Region Concentration on Hot-Carrier-Induced Ron Degradation in nLDMOS TransistorsChen, J.F. et al. | 2008
- 775
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Low-Temperature Performance of Nanoscale MOSFET for Deep-Space RF ApplicationsHong, S.-H. et al. | 2008
- 778
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Time-Resolved Programming Current Measurement and Modeling for NAND-type Nanodot Flash CellYeh, C.-C. et al. | 2008
- 781
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Partially Depleted SONOS FinFET for Unified RAM (URAM) -- Unified Function for High-Speed 1T DRAM and Nonvolatile MemoryHan, J.-W. et al. | 2008
- 784
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Temperature-Dependent Capacitance Characteristics of RF LDMOS Transistors With Different Layout StructuresHu, H.-H. et al. | 2008
- 788
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Investigation of Reliability Characteristics in NMOS and PMOS FinFETsLiao, W.-S. et al. | 2008
- 791
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Vertical Silicon-Nanowire Formation and Gate-All-Around MOSFETYang, B. et al. | 2008
- 795
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A Capacitorless 1T-DRAM on SOI Based on Dynamic Coupling and Double-Gate OperationBawedin, M. et al. | 2008
- 799
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1-nm Spatial Resolution in Carrier Profiling of Ultrashallow Junctions by Scanning Spreading Resistance MicroscopyZhang, L. et al. | 2008
- 802
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Analysis and Modeling of Threshold Voltage Mismatch for CMOS at 65 nm and BeyondJohnson, J.B. et al. | 2008
- 805
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High-Performance Gate-All-Around GeOI p-MOSFETs Fabricated by Rapid Melt Growth Using Plasma Nitridation and ALD Al2O3 Gate Dielectric and Self-Aligned NiGe ContactsFeng, J. et al. | 2008
- 808
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Germanium Source and Drain Stressors for Ultrathin-Body and Nanowire Field-Effect TransistorsLiow, T.-Y. et al. | 2008
- 811
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Mobility Scaling in Short-Channel Length Strained Ge-on-Insulator P-MOSFETsBedell, S.W. et al. | 2008
- 814
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IEEE ELECTRON DEVICES SOCIETY MEETINGS CALENDAR| 2008
- 816
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Information for Authors| 2008
- 817
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ANNOUNCEMENTS - Call for Papers -- Special Issue on Solid-State Image Sensors| 2008
- 818
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Call for Papers -- 2008 SISC| 2008
- 819
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Call for Nominations -- 2008 EDS AdCom| 2008