ZnO Nanowire and WS2 Nanotube Electronics (English)
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In:
IEEE transactions on electron devices
;
55
, 11
; 2988-3000
;
2008
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ISSN:
- Article (Journal) / Print
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Title:ZnO Nanowire and WS2 Nanotube Electronics
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Contributors:Unalan, H.E. ( author ) / Yang, Y. / Zhang, Y. / Hiralal, P. / Kuo, D. / Dalal, S. / Butler, T. / Cha, S.N. / Jang, J.E. / Chremmou, K.
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Published in:IEEE transactions on electron devices ; 55, 11 ; 2988-3000
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- New search for: IEEE
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Place of publication:New York, NY
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Publication date:2008
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
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Source:
Table of contents – Volume 55, Issue 11
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 2809
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Table of contents| 2008
- 2813
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GUEST EDITORIAL - Special Issue on Nanowire Transistors: Modeling, Device Design, and TechnologyKumar, M.J. et al. | 2008
- 2813
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Special Issue on Nanowire Transistors: Modeling, Device Design, and TechnologyKumar, M.J. / Reed, M.A. / Amaratunga, G. / Cohen, G.M. / Janes, D.B. / Lieber, C.M. / Meyyappan, M. / Wernersson, L.-E. / Wang, K.L. / Chau, R.S. et al. | 2008
- 2820
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Some Considerations on Nanowires in NanoelectronicsFerry, D.K. / Gilbert, M.J. / Akis, R. et al. | 2008
- 2820
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SPECIAL ISSUE PAPERS - Some Considerations on Nanowires in Nanoelectronics (Invited Paper)Ferry, D.K. et al. | 2008
- 2827
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Toward Nanowire ElectronicsAppenzeller, J. / Knoch, J. / Bjork, M.T. / Riel, H. / Schmid, H. / Riess, W. et al. | 2008
- 2827
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Toward Nanowire Electronics (Invited Paper)Appenzeller, J. et al. | 2008
- 2846
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Scaling of Nanowire TransistorsBo Yu, / Lingquan Wang, / Yu Yuan, / Asbeck, P.M. / Yuan Taur, et al. | 2008
- 2846
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Scaling of Nanowire Transistors (Invited Paper)Yu, B. et al. | 2008
- 2859
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Nanowire Transistor Performance Limits and ApplicationsWei Lu, / Ping Xie, / Lieber, C.M. et al. | 2008
- 2859
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Nanowire Transistor Performance Limits and Applications (Invited Paper)Lu, W. et al. | 2008
- 2877
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Compact Modeling of Ballistic Nanowire MOSFETsNatori, K. et al. | 2008
- 2877
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Compact Modeling of Ballistic Nanowire MOSFETs (Invited Paper)Natori, K. et al. | 2008
- 2886
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Theoretical Study of Carrier Transport in Silicon Nanowire Transistors Based on the Multisubband Boltzmann Transport Equation (Invited Paper)Jin, S. et al. | 2008
- 2886
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Theoretical Study of Carrier Transport in Silicon Nanowire Transistors Based on the Multisubband Boltzmann Transport EquationSeonghoon Jin, / Fischetti, M.V. / Ting-wei Tang, et al. | 2008
- 2898
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A Compact Model of Silicon-Based Nanowire MOSFETs for Circuit Simulation and DesignJie Yang, / Jin He, / Feng Liu, / Lining Zhang, / Feilong Liu, / Xing Zhang, / Mansun Chan, et al. | 2008
- 2907
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An Analytic Model for Nanowire MOSFETs With Ge/Si Core/Shell StructureLining Zhang, / Jin He, / Jian Zhang, / Feng Liu, / Yue Fu, / Yan Song, / Xing Zhang, et al. | 2008
- 2918
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Quasi-Ballistic Transport in Nanowire Field-Effect TransistorsGnani, E. / Gnudi, A. / Reggiani, S. / Baccarani, G. et al. | 2008
- 2931
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Charge Transport Characteristics in Boron-Doped Silicon NanowiresIngole, S. / Manandhar, P. / Chikkannanavar, S.B. / Akhadov, E.A. / Picraux, S.T. et al. | 2008
- 2939
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Performance of $n$-Type InSb and InAs Nanowire Field-Effect TransistorsKhayer, M.A. / Lake, R.K. et al. | 2008
- 2939
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Performance of Formula Not Shown -Type InSb and InAs Nanowire Field-Effect TransistorsKhayer, M.A. / Lake, R.K. et al. | 2008
- 2946
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The Nanoscale Silicon Accumulation-Mode MOSFET—A Comprehensive Numerical StudyIqbal, M.M.-H. / Yi Hong, / Garg, P. / Udrea, F. / Migliorato, P. / Fonash, S.J. et al. | 2008
- 2960
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Experimental Investigations on Carrier Transport in Si Nanowire Transistors: Ballistic Efficiency and Apparent MobilityRunsheng Wang, / Hongwei Liu, / Ru Huang, / Jing Zhuge, / Liangliang Zhang, / Dong-Won Kim, / Xing Zhang, / Donggun Park, / Yangyuan Wang, et al. | 2008
- 2968
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Size Dependence of Surface-Roughness-Limited Mobility in Silicon-Nanowire FETsPoli, S. / Pala, M.G. / Poiroux, T. / Deleonibus, S. / Baccarani, G. et al. | 2008
- 2977
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ZnO Nanowire Field-Effect TransistorsPai-Chun Chang, / Jia Grace Lu, et al. | 2008
- 2977
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ZnO Nanowire Field-Effect Transistors (Invited Paper)Chang, P.-C. et al. | 2008
- 2988
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ZnO Nanowire and WS2 Nanotube ElectronicsUnalan, H.E. et al. | 2008
- 2988
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ZnO Nanowire and Formula Not Shown Nanotube ElectronicsUnalan, H.E. / Yang, Y. / Zhang, Y. / Hiralal, P. / Kuo, D. / Dalal, S. / Butler, T. / Cha, S.N. / Jang, J.E. et al. | 2008
- 2988
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ZnO Nanowire and $\hbox{WS}_{2}$ Nanotube ElectronicsUnalan, H.E. / Yang Yang, / Yan Zhang, / Hiralal, P. / Kuo, D. / Dalal, S. / Butler, T. / Seung Nam Cha, / Jae Eun Jang, / Chremmou, K. et al. | 2008
- 3001
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Zinc Oxide Nanostructures and High Electron Mobility Nanocomposite Thin Film TransistorsLi, F.M. / Hsieh, G.-W. / Dalal, S. / Newton, M.C. / Stott, J.E. / Hiralal, P. / Nathan, A. / Warburton, P.A. / Unalan, H.E. / Beecher, P. et al. | 2008
- 3012
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Modeling and Fabrication of ZnO Nanowire Transistors (Invited Paper)Pearton, S.J. et al. | 2008
- 3012
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Modeling and Fabrication of ZnO Nanowire TransistorsPearton, S.J. / Norton, D.P. / Li-Chia Tien, / Jing Guo, et al. | 2008
- 3020
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Electrical Properties of Surface-Tailored ZnO Nanowire Field-Effect TransistorsWoong-Ki Hong, / Gunho Jo, / Soon-Shin Kwon, / Sunghoon Song, / Takhee Lee, et al. | 2008
- 3020
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Electrical Properties of Surface-Tailored ZnO Nanowire Field-Effect Transistors (Invited Paper)Hong, W.-K. et al. | 2008
- 3030
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Development of a Vertical Wrap-Gated InAs FET (Invited Paper)Thelander, C. et al. | 2008
- 3030
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Development of a Vertical Wrap-Gated InAs FETThelander, C. / Rehnstedt, C. / Froberg, L.E. / Lind, E. / Martensson, T. / Caroff, P. / Lowgren, T. / Ohlsson, B.J. / Samuelson, L. / Wernersson, L.-E. et al. | 2008
- 3037
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Vertical InAs Nanowire Wrap Gate Transistors on Si SubstratesRehnstedt, C. / Martensson, T. / Thelander, C. / Samuelson, L. / Wernersson, L.-E. et al. | 2008
- 3037
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Vertical InAs Nanowire Wrap Gate Transistors on Si Substrates (Invited Paper)Rehnstedt, C. et al. | 2008
- 3042
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Sensitivity of Gate-All-Around Nanowire MOSFETs to Process Variations—A Comparison With Multigate MOSFETsYu-Sheng Wu, / Pin Su, et al. | 2008
- 3048
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Strained Silicon Nanowire Transistors With Germanium Source and Drain StressorsTsung-Yang Liow, / Kian-Ming Tan, / Rinus Lee, / Ming Zhu, / Ben Lian-Huat Tan, / Balasubramanian, N. / Yee-Chia Yeo, et al. | 2008
- 3056
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Nanowire Thin-Film Transistors: A New Avenue to High-Performance MacroelectronicsXiangfeng Duan, et al. | 2008
- 3063
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Fabrication and Characterization of Multiple-Gated Poly-Si Nanowire Thin-Film Transistors and Impacts of Multiple-Gate Structures on Device FluctuationsHsing-Hui Hsu, / Ta-Wei Liu, / Leng Chan, / Chuan-Ding Lin, / Tiao-Yuan Huang, / Horng-Chih Lin, et al. | 2008
- 3070
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What Do We Certainly Know About 1-f Noise in MOSTs? (Invited Paper)Vandamme, L.K.J. et al. | 2008
- 3070
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What Do We Certainly Know About $\hbox{1}/f$ Noise in MOSTs?Vandamme, L.K.J. / Hooge, F.N. et al. | 2008
- 3070
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What Do We Certainly Know About Formula Not Shown Noise in MOSTs?Vandamme, L.K.J. / Hooge, F.N. et al. | 2008
- 3086
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Metrology for the Electrical Characterization of Semiconductor NanowiresRichter, Curt A. / Xiong, Hao D. / Zhu, Xiaoxiao / Wang, Wenyong / Stanford, Vincent M. / Hong, Woong-Ki / Lee, Takhee / Ioannou, Dimitris E. / Li, Qiliang et al. | 2008
- 3086
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Metrology for the Electrical Characterization of Semiconductor Nanowires (Invited Paper)Richter, C.A. et al. | 2008
- 3096
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Integration of Self-Assembled Metal-Catalyzed Semiconductor Nanowires for Sensors and Large-Area ElectronicsKamins, T.I. et al. | 2008
- 3096
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Integration of Self-Assembled Metal-Catalyzed Semiconductor Nanowires for Sensors and Large-Area Electronics (Invited Paper)Kamins, T.I. et al. | 2008
- 3107
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Si, SiGe Nanowire Devices by Top–Down Technology and Their ApplicationsSingh, N. / Buddharaju, K.D. / Manhas, S.K. / Agarwal, A. / Rustagi, S.C. / Lo, G.Q. / Balasubramanian, N. / Kwong, D.-L. et al. | 2008
- 3107
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Si, SiGe Nanowire Devices by Top-Down Technology and Their Applications (Invited Paper)Singh, N. et al. | 2008
- 3119
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Semiconducting Nanowire Field-Effect Transistor Biomolecular SensorsStern, E. / Vacic, A. / Reed, M.A. et al. | 2008
- 3119
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Semiconducting Nanowire Field-Effect Transistor Biomolecular Sensors (Invited Paper)Stern, E. et al. | 2008
- 3131
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Germanium Antimonide Phase-Change Nanowires for Memory ApplicationsXuhui Sun, / Bin Yu, / Ng, G. / Meyyappan, M. / Sanghyun Ju, / Janes, D.B. et al. | 2008
- 3131
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Germanium Antimonide Phase-Change Nanowires for Memory Applications (Invited Paper)Sun, X. et al. | 2008
- 3136
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Optoelectronics, Displays, and Imaging - Bottom-Gate Zinc Oxide Thin-Film Transistors (ZnO TFTs) for AM-LCDsHirao, T. et al. | 2008
- 3136
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Bottom-Gate Zinc Oxide Thin-Film Transistors (ZnO TFTs) for AM-LCDsHirao, T. / Furuta, M. / Hiramatsu, T. / Matsuda, T. / Chaoyang Li, / Furuta, H. / Hokari, H. / Yoshida, M. / Ishii, H. / Kakegawa, M. et al. | 2008
- 3143
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Wall Charges and Transition Voltage of Microplasma Modes in Plasma Devices With an Auxiliary ElectrodeJeong Hun Mun, / Seung Hun Kim, / Kyung Cheol Choi, et al. | 2008
- 3150
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Reliability - Theory of Breakdown Position Determination by Voltage- and Current-Ratio MethodsAlam, M.A. et al. | 2008
- 3150
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Theory of Breakdown Position Determination by Voltage- and Current-Ratio MethodsAlam, M.A. / Varghese, D. / Kaczer, B. et al. | 2008
- 3159
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Physical Understanding of Strain-Induced Modulation of Gate Oxide Reliability in MOSFETsIrisawa, T. / Numata, T. / Toyoda, E. / Hirashita, N. / Tezuka, T. / Sugiyama, N. / Takagi, S.-i. et al. | 2008
- 3167
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MOSFET Degradation Under RF StressSasse, G.T. / Kuper, F.G. / Schmitz, J. et al. | 2008
- 3175
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Characterization of Fast Relaxation During BTI Stress in Conventional and Advanced CMOS Devices With $\hbox{HfO}_{2}/\hbox{TiN}$ Gate StacksKerber, A. / Maitra, K. / Majumdar, A. / Hargrove, M. / Carter, R.J. / Cartier, E.A. et al. | 2008
- 3175
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Characterization of Fast Relaxation During BTI Stress in Conventional and Advanced CMOS Devices With HfO2-TiN Gate StacksKerber, A. et al. | 2008
- 3175
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Characterization of Fast Relaxation During BTI Stress in Conventional and Advanced CMOS Devices With Formula Not Shown Gate StacksKerber, A. / Maitra, K. / Majumdar, A. / Hargrove, M. / Carter, R.J. / Cartier, E.A. et al. | 2008
- 3184
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New Developments in Charge Pumping Measurements on Thin Stacked DielectricsToledano-Luque, M. / Degraeve, R. / Zahid, M.B. / Pantisano, L. / San Andres, E. / Groeseneken, G. / De Gendt, S. et al. | 2008
- 3192
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Analytical Model for the Electron-Injection Statistics During Programming of Nanoscale nand Flash MemoriesCompagnoni, C.M. / Gusmeroli, R. / Spinelli, A.S. / Visconti, A. et al. | 2008
- 3192
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Silicon Devices - Analytical Model for the Electron-Injection Statistics During Programming of Nanoscale NAND Flash MemoriesCompagnoni, C.M. et al. | 2008
- 3200
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Nondestructive Readout of Ferroelectric-Gate Field-Effect Transistor Memory With an Intermediate Electrode by Using an Improved Operation MethodHorita, S. / Trinh, B. et al. | 2008
- 3208
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Analytical Design Algorithm of Planar Inductor Layout in CMOS TechnologyHeng-Ming Hsu, / Kai-Yuen Chan, / Hung-Chi Chien, / Han-Chien Kuan, et al. | 2008
- 3214
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Analytical Model and Current Gain Enhancement of Polysilicon-Emitter Contact Bipolar TransistorsZouari, A. / Ben Arab, A. et al. | 2008
- 3221
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Investigation of Metallized Source/Drain Extension for High-Performance Strained NMOSFETsTzu-Juei Wang, / Chih-Hsin Ko, / Hong-Nien Lin, / Shoou-Jinn Chang, / San-Lein Wu, / Ta-Ming Kuan, / Wen-Chin Lee, et al. | 2008
- 3227
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An Application-Driven Improvement of the Drift–Diffusion Model for Carrier Transport in Decanano-Scaled CMOS DevicesKampen, C. / Burenkov, A. / Lorenz, J. / Ryssel, H. / Aubry-Fortuna, V. / Bournel, A. et al. | 2008
- 3236
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A Study of On-Chip Stacked Multiloop Spiral InductorsKai Yang, / Wen-Yan Yin, / Jinglin Shi, / Kai Kang, / Jun-Fa Mao, / Zhang, Y.P. et al. | 2008
- 3246
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High-Performance BOI FinFETs Based on Bulk-Silicon SubstrateXiaoyan Xu, / Runsheng Wang, / Ru Huang, / Jing Zhuge, / Gang Chen, / Xing Zhang, / Yangyuan Wang, et al. | 2008
- 3251
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Random-Dopant-Induced Drain Current Variation in Nano-MOSFETs: A Three-Dimensional Self-Consistent Monte Carlo Simulation Study Using “Ab Initio” Ionized Impurity ScatteringAlexander, C. / Roy, G. / Asenov, A. et al. | 2008
- 3259
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Electrical Characteristics and Thermal Stability of $ \hbox{Hf}_{x}\hbox{Ta}_{y}\hbox{Si}_{z}\hbox{N}$ Metal Gate Electrode for Advanced MOS DevicesChang-Ta Yang, / Kuei-Shu Chang-Liao, / Hsin-Chun Chang, / Chung-Hao Fu, / Tien-Ko Wang, / Wen-Fa Tsai, / Chi-Fong Ai, / Wen-Fa Wu, et al. | 2008
- 3259
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Electrical Characteristics and Thermal Stability of Formula Not Shown Metal Gate Electrode for Advanced MOS DevicesYang, C.-T. / Chang-Liao, K.-S. / Chang, H.-C. / Fu, C.-H. / Wang, T.-K. / Tsai, W.-F. / Ai, C.-F. / Wu, W.-F. et al. | 2008
- 3259
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Electrical Characteristics and Thermal Stability of HfxTaySizN Metal Gate Electrode for Advanced MOS DevicesYang, C.-T. et al. | 2008
- 3267
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Accurate Systematic Model-Parameter Extraction for On-Chip Spiral InductorsHao-Hui Chen, / Huai-Wen Zhang, / Shyh-Jong Chung, / Jen-Tsai Kuo, / Tzung-Chi Wu, et al. | 2008
- 3274
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A Novel and Robust Approach for Common Mode Feedback Using IDDG FinFETShrivastava, M. / Baghini, M.S. / Sachid, A.B. / Sharma, D.K. / Rao, V.R. et al. | 2008
- 3283
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Solid-State Device Phenomena - Diffusivity of Cu Ions in Solid Electrolyte and Its Effect on the Performance of Nanometer-Scale SwitchBanno, N. et al. | 2008
- 3283
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Diffusivity of Cu Ions in Solid Electrolyte and Its Effect on the Performance of Nanometer-Scale SwitchBanno, N. / Sakamoto, T. / Iguchi, N. / Sunamura, H. / Terabe, K. / Hasegawa, T. / Aono, M. et al. | 2008
- 3288
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Thermal Issues in Micromachined Spiral Inductors for High-Power ApplicationsHuseyin Sagkol, / Rejaei, B. / Burghartz, J.N. et al. | 2008
- 3288
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Solid-State Sensors and Actuators - Thermal Issues in Micromachined Spiral Inductors for High-Power ApplicationsSagkol, H. et al. | 2008
- 3295
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Compact Modeling of Junction Current in Dynamically Depleted SOI MOSFETsWeimin Wu, / Wei Yao, / Gildenblat, G. / Scholten, A.J. et al. | 2008
- 3295
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BRIEFS - Compact Modeling of Junction Current in Dynamically Depleted SOI MOSFETsWu, W. et al. | 2008
- 3299
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A New Strained-Silicon Channel Trench-Gate Power MOSFET: Design and AnalysisSaxena, R.S. / Kumar, M.J. et al. | 2008
- 3305
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Device Characteristics of AlGaN/GaN MOS-HEMTs Using High- $k$ Praseodymium Oxide LayerHsien-Chin Chiu, / Chih-Wei Yang, / Yung-Hsiang Lin, / Ray-Ming Lin, / Liann-Be Chang, / Kuo-Yang Horng, et al. | 2008
- 3305
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Device Characteristics of AlGaN/GaN MOS-HEMTs Using High- Formula Not Shown Praseodymium Oxide LayerChiu, H.-C. / Yang, C.-W. / Lin, Y.-H. / Lin, R.-M. / Chang, L.-B. / Horng, K.-Y. et al. | 2008
- 3310
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On an InGaP/InGaAs Double Channel Pseudomorphic High Electron Mobility Transistor With Graded Triple $\delta$-Doped SheetsLi-Yang Chen, / Shiou-Ying Cheng, / Tzu-Pin Chen, / Kuei-Yi Chu, / Tsung-Han Tsai, / Yi-Chun Liu, / Xin-Da Liao, / Wen-Chau Liu, et al. | 2008
- 3310
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On an InGaP/InGaAs Double Channel Pseudomorphic High Electron Mobility Transistor With Graded Triple Formula Not Shown -Doped SheetsChen, L.-Y. / Cheng, S.-Y. / Chen, T.-P. / Chu, K.-Y. / Tsai, T.-H. / Liu, Y.-C. / Liao, X.-D. / Liu, W.-C. et al. | 2008
- 3310
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On an InGaP-InGaAs Double Channel Pseudomorphic High Electron Mobility Transistor With Graded Triple δ-Doped SheetsChen, L.-Y. et al. | 2008
- 3314
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UV Illumination Technique for Leakage Current Reduction in a-Si:H Thin-Film TransistorsYiming Li, / Chih-Hong Hwang, / Chung-Le Chen, / Shuoting Yan, / Jen-Chung Lou, et al. | 2008
- 3319
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ANNOUNCEMENTS - Call for Papers — Special Issue of IEEE TRANSACTIONS ON ELECTRON DEVICES on Solid-State Image Sensors| 2008
- 3319
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Special issue of IEEE Transactions on Electron Devices| 2008
- 3320
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2009 34th IEEE Photovoltaic Specialists Conference (PVSC)| 2008
- 3320
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Call for Papers — 34th IEEE Photovoltaic Specialists Conference (PVSC)| 2008
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[Front cover]| 2008
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IEEE Transactions on Electron Devices publication information| 2008
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IEEE Transactions on Electron Devices information for authors| 2008