pMOS transistor with embedded SiGe: Elastic and plastic relaxation issues (English)
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In:
Thin solid films
;
517
, 1
; 113-116
;
2009
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ISSN:
- Article (Journal) / Print
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Title:pMOS transistor with embedded SiGe: Elastic and plastic relaxation issues
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Contributors:Hikavyy, A. ( author ) / Bhouri, N. / Loo, R. / Verheyen, P. / Clemente, F. / Hopkins, J. / Trussell, R. / Caymax, M.
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Published in:Thin solid films ; 517, 1 ; 113-116
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Place of publication:Amsterdam [u.a.] Elsevier
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Publication date:2009
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ISSN:
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ZDBID:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
- New search for: 33.68
- Further information on Basic classification
- New search for: 535/3485
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Keywords:
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Source:
Table of contents – Volume 517, Issue 1
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
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PrefaceDerrien, Jacques / Le Thanh, Vinh / Kasper, Erich et al. | 2008
- 2
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The present and the future of spintronicsFert, Albert et al. | 2008
- 6
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DC and low-frequency-noise characterization of epitaxially grown raised-emitter SiGe HBTsWashio, Katsuyoshi et al. | 2008
- 10
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Very low-temperature epitaxial growth of silicon and germanium using plasma-assisted CVDSakuraba, Masao / Muto, Daisuke / Mori, Masaki / Sugawara, Katsutoshi / Murota, Junichi et al. | 2008
- 14
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Application of SiGe bulk crystal as a substrate for strain-controlled heterostructure materialsUsami, Noritaka / Nihei, Ryota / Azuma, Yukinaga / Yonenaga, Ichiro / Nakajima, Kazuo / Sawano, Kentarou / Shiraki, Yasuhiro et al. | 2008
- 17
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Evaluation of relaxation and misfit dislocation blocking in strained silicon on virtual substratesParsons, J. / Beer, C.S. / Leadley, D.R. / Capewell, A.D. / Grasby, T.J. et al. | 2008
- 20
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Ion-assisted MBE for misfit-dislocation templates serving ordered growth of SiGe islandsLyutovich, K. / Oehme, M. / Werner, J. / Bahouchi, B. / Kasper, E. / Hofer, C. / Teichert, C. et al. | 2008
- 23
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High Ge content SGOI substrates obtained by the Ge condensation technique: A template for growth of strained epitaxial GeSouriau, L. / Terzieva, V. / Vandervorst, W. / Clemente, F. / Brijs, B. / Moussa, A. / Meuris, M. / Loo, R. / Caymax, M. et al. | 2008
- 27
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Reliability of ultra-thin titanium dioxide (TiO2) films on strained-SiBera, M.K. / Mahata, C. / Maiti, C.K. et al. | 2008
- 31
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Local strain evaluation of single crystal Si pillar by micro Raman spectroscopy and photoluminescenceWang, Dong / Nakashima, Hiroshi / Tanaka, Masanori / Sadoh, Taizoh / Miyao, Masanobu / Morioka, Jun / Kitamura, Tokuhide et al. | 2008
- 34
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Molecular beam epitaxy growth of Si/SiGe bound-to-continuum quantum cascade structures for THz emissionZhao, M. / Karim, A. / Hansson, G.V. / Ni, W.-X. / Townsend, P. / Lynch, S.A. / Paul, D.J. et al. | 2008
- 38
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Microstructural change of dislocation structure around SiGe/Si interface in SGOI wafer with ramping processIi, Seiichiro / Takaki, Yuichi / Ikeda, Ken-ichi / Nakashima, Hideharu / Nakashima, Hiroshi et al. | 2008
- 41
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Control of electronic charged states of Si-based quantum dots for floating gate applicationMiyazaki, S. / Makihara, K. / Ikeda, M. et al. | 2008
- 45
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Epitaxial growth of two-dimensional electron gas (2DEG) in strained silicon for research on ultra-low energy electronic processesLiu, J. / Kim, J.H. / Xie, Y.H. / Lu, T.M. / Lai, K. et al. | 2008
- 50
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Photoluminescence of Si nanocrystals formed by the photosynthesisNozaki, S. / Chen, C.Y. / Kimura, S. / Ono, H. / Uchida, K. et al. | 2008
- 55
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Exciton condensation in the compressively strained SiGe layers of Si/SiGe/Si heterostructuresBurbaev, T.M. / Bagaev, V.S. / Bobrik, E.A. / Kurbatov, V.A. / Novikov, A.V. / Rzaev, M.M. / Sibeldin, N.N. / Schäffler, F. / Tsvetkov, V.A. / Tarakanov, A.G. et al. | 2008
- 57
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Growth and characterization of Ge nanostructures selectively grown on patterned SiCheng, M.H. / Ni, W.X. / Luo, G.L. / Huang, S.C. / Chang, J.J. / Lee, C.Y. et al. | 2008
- 62
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MBE growth conditions for Si island formation on Ge (001) substratesPachinger, D. / Lichtenberger, H. / Chen, G. / Stangl, J. / Hesser, G. / Schäffler, F. et al. | 2008
- 65
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Anisotropy of the surface thermodynamic properties of siliconMüller, P. / Métois, J.J. et al. | 2008
- 69
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The influence of elastic strains on the growth and properties of vertically ordered Ge “hut”-clustersNikiforov, A.I. / Ulyanov, V.V. / Teys, S.A. / Gutakovsky, A.K. / Pchelyakov, O.P. et al. | 2008
- 71
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Impact of emitter fabrication on the yield of SiGe HBTsHeinemann, B. / Rücker, H. / Tillack, B. et al. | 2008
- 75
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Highly doped Si and Ge formed by GILD (gas immersion laser doping); from GILD to superconducting siliconCammilleri, D. / Fossard, F. / Débarre, D. / Tran Manh, C. / Dubois, C. / Bustarret, E. / Marcenat, C. / Achatz, P. / Bouchier, D. / Boulmer, J. et al. | 2008
- 80
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Silicide and germanide technology for contacts and gates in MOSFET applicationsZaima, Shigeaki / Nakatsuka, Osamu / Kondo, Hiroki / Sakashita, Mitsuo / Sakai, Akira / Ogawa, Masaki et al. | 2008
- 84
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Selective epitaxial growth of B-doped SiGe and HCl etch of Si for the formation of SiGe:B recessed source and drain (pMOS transistors)Radamson, H.H. / Kolahdouz, M. / Ghandi, R. / Hållstedt, J. et al. | 2008
- 87
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Fabrication of high quality SiGe relaxed thin layers by ion implantation technique with Ar, Si and Ge ionsSawano, K. / Fukumoto, A. / Hoshi, Y. / Yamanaka, J. / Nakagawa, K. / Shiraki, Y. et al. | 2008
- 90
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Selective vapor phase etching of SiGe versus Si by HClYamamoto, Yuji / Köpke, Klaus / Tillack, Bernd et al. | 2008
- 93
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Selective etching of Si1−xGex versus Si with gaseous HCl for the formation of advanced CMOS devicesLoubet, Nicolas / Kormann, Thomas / Chabanne, Guillaume / Denorme, Stéphane / Dutartre, Didier et al. | 2008
- 98
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Precise control of doping profile and crystal quality improvement of SiGe HBTs using continuous epitaxial growth technologyOda, Katsuya / Miura, Makoto / Shimamoto, Hiromi / Washio, Katsuyoshi et al. | 2008
- 101
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Multi-gate devices for the 32 nm technology node and beyond: Challenges for Selective Epitaxial GrowthCollaert, N. / Rooyackers, R. / Hikavyy, A. / Dixit, A. / Leys, F. / Verheyen, P. / Loo, R. / Jurczak, M. / Biesemans, S. et al. | 2008
- 105
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Studying the impact of carbon on device performance for strained-Si MOSFETsLee, M.H. / Chang, S.T. / Peng, C.-Y. / Hsieh, B.-F. / Maikap, S. / Liao, S.-H. et al. | 2008
- 110
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Impact of Ge fraction modulation upon electrical characteristics of hole resonant tunneling diodes with Si/Strained Si1−xGex/Si(100) heterostructureSeo, Takahiro / Sakuraba, Masao / Murota, Junichi et al. | 2008
- 113
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pMOS transistor with embedded SiGe: Elastic and plastic relaxation issuesHikavyy, A. / Bhouri, N. / Loo, R. / Verheyen, P. / Clemente, F. / Hopkins, J. / Trussell, R. / Caymax, M. et al. | 2008
- 117
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Sidewall transfer lithography for reliable fabrication of nanowires and deca-nanometer MOSFETsHållstedt, J. / Hellström, P.-E. / Radamson, H.H. et al. | 2008
- 121
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Germanium-based nanophotonic devices: Two-dimensional photonic crystals and cavitiesBoucaud, P. / El Kurdi, M. / David, S. / Checoury, X. / Li, X. / Ngo, T.-P. / Sauvage, S. / Bouchier, D. / Fishman, G. / Kermarrec, O. et al. | 2008
- 125
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Room-temperature light-emission from Ge quantum dots in photonic crystalsXia, Jinsong / Nemoto, Koudai / Ikegami, Yuta / Usami, Noritaka / Nakata, Yasushi / Shiraki, Yasuhiro et al. | 2008
- 128
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Photoluminescence of strained Si1−x−yGexCy epilayers on Si(100)Rowell, N.L. / Lockwood, D.J. / Baribeau, J.-M. et al. | 2008
- 132
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Performance and reliability of SiGe photodetectorsSarid, Gadi / Ginsburg, Eyal / Dosunmu, Femi / Morse, Mike et al. | 2008
- 134
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Infrared absorption, multiphonon processes and time reversal effect on Si and Ge band structureKunert, H.W. / Machatine, A.G.J. / Malherbe, J.B. / Barnas, J. / Hoffmann, A. / Wagner, M.R. et al. | 2008
- 137
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Germanium waveguide photodetectors integrated on silicon with MBEOehme, M. / Werner, J. / Kaschel, M. / Kirfel, O. / Kasper, E. et al. | 2008
- 140
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Si (001) surface preparation for the antiphase domain free heteroepitaxial growth of GaP on Si substrateKunert, B. / Németh, I. / Reinhard, S. / Volz, K. / Stolz, W. et al. | 2008
- 144
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Role of hydrogen at germanium/dielectric interfacesVan de Walle, C.G. / Weber, J.R. / Janotti, A. et al. | 2008
- 148
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GaAs on Ge for CMOSBrammertz, G. / Caymax, M. / Meuris, M. / Heyns, M. / Mols, Y. / Degroote, S. / Leys, M. et al. | 2008
- 152
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Implantation defects and n-type doping in Ge and Ge rich SiGePeaker, A.R. / Markevich, V.P. / Hamilton, B. / Hawkins, I.D. / Slotte, J. / Kuitunen, K. / Tuomisto, F. / Satta, A. / Simoen, E. / Abrosimov, N.V. et al. | 2008
- 155
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Suppression of Ge–O and Ge–N bonding at Ge–HfO2 and Ge–TiO2 interfaces by deposition onto plasma-nitrided passivated Ge substratesLee, S. / Long, J.P. / Lucovsky, G. / Lüning, J. et al. | 2008
- 159
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Tensile strained Ge layers on strain-relaxed Ge1−xSnx/virtual Ge substratesTakeuchi, Shotaro / Sakai, Akira / Nakatsuka, Osamu / Ogawa, Masaki / Zaima, Shigeaki et al. | 2008
- 163
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Charge trapping characteristics in high-k gate dielectrics on germaniumMahata, C. / Bera, M.K. / Bose, P.K. / Maiti, C.K. et al. | 2008
- 167
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Ge wire MOSFETs fabricated by three-dimensional Ge condensation techniqueIrisawa, T. / Numata, T. / Hirashita, N. / Moriyama, Y. / Nakaharai, S. / Tezuka, T. / Sugiyama, N. / Takagi, S. et al. | 2008
- 170
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Photoelectric method for non-contact characterization of SiGeTsidilkovski, Edward / Steeples, Kenneth et al. | 2008
- 172
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Benefits and side effects of high temperature anneal used to reduce threading dislocation defects in epitaxial Ge layers on Si substratesTerzieva, V. / Souriau, L. / Caymax, M. / Brunco, D.P. / Moussa, A. / Van Elshocht, S. / Loo, R. / Clemente, F. / Satta, A. / Meuris, Marc et al. | 2008
- 178
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(110) Ultrathin GOI layers fabricated by Ge condensation methodDissanayake, Sanjeewa / Shuto, Yusuke / Sugahara, Satoshi / Takenaka, Mitsuru / Takagi, Shinichi et al. | 2008
- 181
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Atomically controlled hetero-epitaxy of Fe3Si/SiGe for spintronics applicationMiyao, Masanobu / Ueda, Koji / Ando, Yu-ichiro / Kumano, Mamoru / Sadoh, Taizoh / Narumi, Kazumasa / Maeda, Yoshihito et al. | 2008
- 184
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Spintronics for nanoelectronics and nanosystemsWang, Kang L. / Zhao, Zuoming / Khitun, Alex et al. | 2008
- 191
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Epitaxial growth of Mn5Ge3/Ge(111) heterostructures for spin injectionOlive-Mendez, S. / Spiesser, A. / Michez, L.A. / Le Thanh, V. / Glachant, A. / Derrien, J. / Devillers, T. / Barski, A. / Jamet, M. et al. | 2008
- 197
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Epitaxial growth of high-κ oxides on siliconMerckling, C. / Saint-Girons, G. / Delhaye, G. / Patriarche, G. / Largeau, L. / Favre-Nicollin, V. / El-Kazzi, M. / Regreny, P. / Vilquin, B. / Marty, O. et al. | 2008
- 201
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Characterization of lanthanum lutetium oxide thin films grown by atomic layer deposition as an alternative gate dielectricRoeckerath, M. / Heeg, T. / Lopes, J.M.J. / Schubert, J. / Mantl, S. / Besmehn, A. / Myllymäki, P. / Niinistö, L. et al. | 2008
- 204
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Dependences of effective work functions of TaN on HfO2 and SiO2 on post-metallization annealSugimoto, Youhei / Kajiwara, Masanari / Yamamoto, Keisuke / Suehiro, Yuusaku / Wang, Dong / Nakashima, Hiroshi et al. | 2008
- 207
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Reliability degradation of thin HfO2/SiO2 gate stacks by remote RF hydrogen and deuterium plasma treatmentEfthymiou, E. / Bernardini, S. / Zhang, J.F. / Volkos, S.N. / Hamilton, B. / Peaker, A.R. et al. | 2008
- 209
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Initial oxidation of HF-acid treated SiGe(100) surfaces under air exposure investigated by synchrotron radiation X-ray photoelectron spectroscopy and IR absorption spectroscopyNarita, Yuzuru / Hirose, Fumihiko / Nagato, Masaya / Kinoshita, Yuta et al. | 2008
- 213
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Thermal stability improvement of Si1−yCy layers by SiO2 cap layersIshihara, Hanae / Inoue, Komaki / Yamada, Akira / Konagai, Makoto et al. | 2008
- 216
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Low temperature high-rate growth of crystalline Ge films on quartz and crystalline Si substrates from VHF inductively-coupled plasma of GeH4Sakata, Tsutomu / Makihara, Katsunori / Deki, Hidenori / Higashi, Seiichiro / Miyazaki, Seiichi et al. | 2008
- 219
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Structural change of atomic-order nitride formed on Si1−xGex(100) and Ge(100) by heat treatmentAkiyama, Nao / Sakuraba, Masao / Tillack, Bernd / Murota, Junichi et al. | 2008
- 222
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Numerical simulation of the UV-excimer laser assisted modification of amorphous hydrogenated Si/Ge bilayers to graded epitaxial heterostructuresConde, J.C. / Fornarini, L. / Chiussi, S. / Gontad, F. / González, P. / Leon, B. / Martelli, S. et al. | 2008
- 227
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MBE growth of low-defect Si layers highly doped with SbWerner, J. / Oehme, M. / Kirfel, O. / Lyutovich, K. / Kasper, E. et al. | 2008
- 229
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Si epitaxial growth on self-limitedly B adsorbed Si1−xGex(100) by ultraclean low-pressure CVD systemIshibashi, Kiyohisa / Sakuraba, Masao / Murota, Junichi / Inokuchi, Yasuhiro / Kunii, Yasuo / Kurokawa, Harushige et al. | 2008
- 232
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Microstructure difference of Ni induced poly-crystallized SiGe by changing the annealing atmosphereYamanaka, Junji / Horie, Tadashi / Mitsui, Minoru / Arimoto, Keisuke / Nakagawa, Kiyokazu / Sato, Tetsuya / Sawano, Kentarou / Shiraki, Yasuhiro / Moritani, Tomokazu / Doi, Minoru et al. | 2008
- 235
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Growth temperature dependence of the crystalline morphology of SiGe films grown on Si(110) substrates with compositionally step-graded bufferArimoto, Keisuke / Watanabe, Masato / Yamanaka, Junji / Nakagawa, Kiyokazu / Sawano, Kentarou / Shiraki, Yasuhiro / Usami, Noritaka / Nakajima, Kazuo et al. | 2008
- 239
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Investigations of hydrogen sensors made of porous siliconGalstyan, V.E. / Martirosyan, Kh.S. / Aroutiounian, V.M. / Arakelyan, V.M. / Arakelyan, A.H. / Soukiassian, P.G. et al. | 2008
- 242
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High-quality epitaxial Si growth at low temperatures by atmospheric pressure plasma CVDYasutake, K. / Ohmi, H. / Kirihata, Y. / Kakiuchi, H. et al. | 2008
- 245
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Charge traps and interface traps in non-volatile memory device with Oxide-Nitride-Oxide structuresSeo, M.W. / Kwak, D.W. / Cho, W.S. / Park, C.J. / Kim, W.S. / Cho, H.Y. et al. | 2008
- 248
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Stress-relaxation mechanism in ultra-thin SiGe on insulator formed by H+ irradiation-assisted Ge condensation methodTanaka, Masanori / Kenjo, Atsushi / Sadoh, Taizoh / Miyao, Masanobu et al. | 2008
- 251
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Comprehensive study of low temperature (<1000 °C) oxidation process in SiGe/SOI structuresTanaka, Masanori / Ohka, Tatsuo / Sadoh, Taizoh / Miyao, Masanobu et al. | 2008
- 254
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Characterizations of polycrystalline SiGe films on SiO2 grown by gas-source molecular beam depositionMitsui, M. / Tamoto, M. / Arimoto, K. / Yamanaka, J. / Nakagawa, K. / Sato, T. / Usami, N. / Sawano, K. / Shiraki, Y. et al. | 2008
- 257
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The influence of Si coverage in a chip on layer profile of selectively grown Si1−xGex layers using RPCVD techniqueKolahdouz, M. / Ghandi, R. / Hållstedt, J. / Ösling, M. / Wise, R. / Wejtmans, Hans / Radamson, H.H. et al. | 2008
- 259
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Doping concentration control of SiGe layers by spectroscopic ellipsometryFursenko, O. / Bauer, J. / Zaumseil, P. / Yamamoto, Y. / Tillack, B. et al. | 2008
- 262
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Numerical simulations of the anisotropic elastic field of screw dislocation networks in twist boundariesMadani, Salah / Outtas, Toufik / Adami, Lahbib et al. | 2008
- 265
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Strain, composition and crystalline perfection in thin SiGe layers studied by Raman spectroscopyPerova, T.S. / Moore, R.A. / Lyutovich, K. / Oehme, M. / Kasper, E. et al. | 2008
- 269
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Ex-situ wet clean and in-situ hydrogen clean for Si and SiGe epitaxyKormann, Thomas / Garnier, Philippe / Chabanne, Guillaume / Fortuin, Arnoud et al. | 2008
- 272
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Relaxed germanium films on silicon (110)Wietler, Tobias F. / Bugiel, Eberhard / Hofmann, Karl R. et al. | 2008
- 275
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Free surface nanopaterning with burried hexagonal dislocations array. Simulation of anisotropic elastic fieldsOuttas, Toufik / Madani, Salah / Adami, Lahbib et al. | 2008
- 278
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Misfit dislocation generation in SiGe epitaxial layers supersaturated with intrinsic point defectsVdovin, V.I. / Zakharov, N.D. et al. | 2008
- 281
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Observation of in-plane strain fluctuation in relaxed SiGe virtual substrateHuang, Wu-Ping / Cheng, Henry H. / Sun, Gregory / Lou, Rui-Fa / Yeh, J.H. / Shen, Tzer-Min et al. | 2008
- 285
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Characterization of anisotropic relaxation rate of SGOI (110) substratesMoriyama, Yoshihiko / Hirashita, Norio / Sugiyama, Naoharu / Takagi, Shin-ichi et al. | 2008
- 289
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Single swift heavy ion-induced trail of discontinuous nanostructures on SiO2 surface under grazing incidenceCarvalho, A.M.J.F. / Touboul, A.D. / Marinoni, M. / Guasch, C. / Ramonda, M. / Lebius, H. / Saigné, F. / Bonnet, J. et al. | 2008
- 293
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In situ scanning tunnelling microscopy investigations of Si epitaxial growth on pit-patterned Si (001) substratesSanduijav, B. / Matei, D. / Chen, G. / Schäffler, F. / Bauer, G. / Springholz, G. et al. | 2008
- 297
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Formation of high-density Si nanodots by agglomeration of ultra-thin amorphous Si filmsKondo, Hiroki / Ueyama, Tomonori / Ikenaga, Eiji / Kobayashi, Keisuke / Sakai, Akira / Ogawa, Masaki / Zaima, Shigeaki et al. | 2008
- 300
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Local strain in Si/Si0.6Ge0.4/Si(100) heterostructures by stripe-shape patterningUhm, Jangwoong / Sakuraba, Masao / Murota, Junichi et al. | 2008
- 303
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Electronic properties of Ge islands embedded in multilayer and superlattice structuresLeitão, J.P. / Sobolev, N.A. / Correia, M.R. / Carmo, M.C. / Stepina, N. / Yakimov, A. / Nikiforov, A. / Magalhães, S. / Alves, E. et al. | 2008
- 306
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Impact of impurity doping into Si quantum dots with Ge core on their electrical charging characteristicsMakihara, Katsunori / Ikeda, Mitsuhisa / Higashi, Seiichiro / Miyazaki, Seiichi et al. | 2008
- 309
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MBE growth of Ge/Si quantum dots upon low-energy pulsed ion irradiationStepina, N.P. / Dvurechenskii, A.V. / Ambrister, V.A. / Smagina, J.V. / Volodin, V.A. / Nenashev, A.V. / Leitão, J.P. / do Carmo, M.C. / Sobolev, N.A. et al. | 2008
- 313
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Pulsed ion-beam assisted deposition of Ge nanocrystals on SiO2 for non-volatile memory deviceStepina, N.P. / Dvurechenskii, A.V. / Armbrister, V.A. / Kirienko, V.V. / Novikov, P.L. / Kesler, V.G. / Gutakovskii, A.K. / Smagina, Z.V. / Spesivtzev, E.V. et al. | 2008
- 317
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Influence of the crystal orientation of substrate on low temperature synthesis of silicon nanowires from Si2H6Akhtar, Saeed / Tanaka, A. / Usami, K. / Tsuchiya, Y. / Oda, S. et al. | 2008
- 320
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Fabrication of uniaxially strained silicon nanowiresFeste, S.F. / Knoch, J. / Buca, D. / Mantl, S. et al. | 2008
- 323
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Characterization of bonding structures of directly bonded hybrid crystal orientation substratesToyoda, E. / Sakai, A. / Nakatsuka, O. / Isogai, H. / Senda, T. / Izunome, K. / Ogawa, M. / Zaima, S. et al. | 2008
- 327
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Localized laser thermal annealing of nanometric SiGe layers protected by a dielectric Bragg mirrorCammilleri, D. / Fossard, F. / Halbwax, M. / Manh, C. Tran / Yam, N. / Débarre, D. / Boulmer, J. / Bouchier, D. et al. | 2008
- 331
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Enhanced n-type dopant solubility in tensile-strained SiBennett, N.S. / Radamson, H.H. / Beer, C.S. / Smith, A.J. / Gwilliam, R.M. / Cowern, N.E.B. / Sealy, B.J. et al. | 2008
- 334
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Effect of strain, substrate surface and growth rate on B-doping in selectively grown SiGe layersGhandi, R. / Kolahdouz, M. / Hållstedt, J. / Wise, R. / Wejtmans, Hans / Radamson, H.H. et al. | 2008
- 337
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SiGe quantum well thermistor materialsWissmar, S.G.E. / Radamsson, H.H. / Yamamoto, Y. / Tillack, B. / Vieider, C. / Andersson, J.Y. et al. | 2008
- 340
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Investigation of strain states and thermal stability of strained-Si-on-Insulator (sSOI) structuresHoshi, Y. / Fukumoto, A. / Sawano, K. / Cayrefourcq, I. / Yoshimi, M. / Shiraki, Y. et al. | 2008
- 343
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Chemical bonding and graded interfacial transition regions at transition metal, Hf(Zr), /high-k gate dielectric, Hf(Zr)O2, interfacesLucovsky, G. / Whitten, J.L. et al. | 2008
- 346
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High Ge fraction intrinsic SiGe-heterochannel MOSFETs with embedded SiGe source/drain electrode formed by in-situ doped selective CVD epitaxial growthTakehiro, Shinobu / Sakuraba, Masao / Tsuchiya, Toshiaki / Murota, Junichi et al. | 2008
- 350
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Influence of thermal processing on the electrical characteristics of MOS capacitors on strained-silicon substratesKelaidis, N. / Ioannou-Sougleridis, V. / Skarlatos, D. / Tsamis, C. / Krontiras, C.A. / Georga, S.N. / Kellerman, B. / Seacrist, M. et al. | 2008
- 353
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Strained-Si nMOSFET formed on very thin SiGe buffer layer fabricated by ion implantation techniqueSawano, K. / Fukumoto, A. / Hoshi, Y. / Nakagawa, K. / Shiraki, Y. et al. | 2008
- 356
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The impact of uniaxial stress on subband structure and mobility of strain Si NMOSFETsChang, S.T. / Liao, S.H. / Lin, C.-Y. et al. | 2008
- 359
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Enhancement of room-temperature 2DHG conductivity in narrow and strained double-sides modulation doped Ge quantum wellMyronov, M. / Shiraki, Y. / Mouri, T. / Itoh, K.M. et al. | 2008
- 362
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Memory properties of oxide–nitride–oxynitride stack structure using ultra-thin oxynitrided film as tunneling layer for nonvolatile memory device on glassJung, Sungwook / Hwang, Sunghyun / Yi, J. et al. | 2008
- 365
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Epitaxy — A way to novel field effect devicesSulima, Torsten / Abelein, Ulrich / Eisele, Ignaz et al. | 2008
- 369
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Hydrogenated amorphous silicon deposited by pulsed DC magnetron sputtering. Deposition temperature effectAbdelmoumen, A. Ben / Cherfi, R. / Kechoune, M. / Aoucher, M. et al. | 2008
- 372
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Elementary excitations in Si, Ge, and diamond time reversal affectedKunert, H.W. / Machatine, A.G.J. / Malherbe, J.B. / Barnas, J. / Hoffmann, A. / Wagner, M.R. et al. | 2008
- 376
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Polarization memory of blue and red luminescence from nanocrystalline porous silicon treated by high-pressure water vapor annealingGelloz, B. / Koyama, H. / Koshida, N. et al. | 2008
- 380
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Ge/Si (100) heterojunction photodiodes fabricated from material grown by low-energy plasma-enhanced chemical vapour depositionOsmond, Johann / Isella, Giovanni / Chrastina, Daniel / Kaufmann, Rolf / von Känel, Hans et al. | 2008
- 383
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Epitaxially grown emitters for thin film crystalline silicon solar cellsVan Nieuwenhuysen, K. / Duerinckx, F. / Kuzma, I. / Payo, M. Recaman / Beaucarne, G. / Poortmans, J. et al. | 2008
- 385
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Effect of growth temperature on photoluminescence of Ge(Si) self-assembled islands embedded in a tensile-strained Si layerShaleev, M.V. / Novikov, A.V. / Yablonskiy, A.N. / Drozdov, Y.N. / Kuznetsov, O.A. / Lobanov, D.N. / Krasilnik, Z.F. et al. | 2008
- 388
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Simulation of p–i–n heterojunctions built on strain-compensated Si/Si0.40Ge0.60/Si multiple quantum wells for photodetection near 1.55 µmSfina, N. / Lazzari, J.-L. / Cuminal, Y. / Christol, P. / Said, M. et al. | 2008
- 391
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Tuning the luminescence emission of {105}-faceted Ge QDs superlattice using proton implantation and thermal annealingMoutanabbir, O. / Miyamoto, S. / Sagara, A. / Oshikawa, H. / Itoh, K.M. et al. | 2008
- 395
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Ab-initio vibrational properties of SiGe alloysTorres, V.J.B. / Coutinho, J. / Briddon, P.R. / Barroso, M. et al. | 2008
- 398
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Comparative analysis of photo- and electroluminescence of multilayer structures with Ge(Si)/Si(001) self-assembled islandsDrozdov, Yu.N. / Krasilnik, Z.F. / Kudryavtsev, К.Е. / Lobanov, D.N. / Novikov, А.V. / Shaleev, М.V. / Shengurov, D.V. / Shmagin, V.B. / Yablonskiy, А.N. et al. | 2008
- 401
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Ge growth over thin SiO2 by UHV–CVD for MOSFET applicationsRenard, C. / Halbwax, M. / Cammilleri, D. / Fossard, F. / Yam, V. / Bouchier, D. / Zheng, Y. et al. | 2008
- 404
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Homo and hetero epitaxy of Germanium using isobutylgermaneAttolini, G. / Bosi, M. / Musayeva, N. / Pelosi, C. / Ferrari, C. / Arumainathan, S. / Timò, G. et al. | 2008
- 407
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Planar defect formation mechanism in Ge-rich SiGe-on-insulator substrates during Ge condensation processHirashita, Norio / Nakaharai, Shu / Moriyama, Yoshihiko / Usuda, Koji / Tezuka, Tsutomu / Sugiyama, Naoharu / Takagi, Shin-ichi et al. | 2008
- 412
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SO-limited mobility in a germanium inversion channel with non-ideal metal gateShah, Raheel / De Souza, M.M. et al. | 2008
- 416
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Low temperature epitaxy and the importance of moisture controlLeys, F.E. / Hikavyy, A. / Machkaoutsan, V. / De Vos, B. / Geenen, L. / Van Daele, B. / Loo, R. / Caymax, M. et al. | 2008
- 419
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Electrically active hydrogen-implantation-induced defects in Ge crystals and SiGe alloysMarkevich, V.P. / Dobaczewski, L. / Bonde Nielsen, K. / Litvinov, V.V. / Petukh, A.N. / Pokotilo, Yu.M. / Abrosimov, N.V. / Peaker, A.R. et al. | 2008
- 422
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Temperature dependent epitaxial growth of ferromagnetic silicide Fe3Si on Ge substrateUeda, Koji / Sadoh, Taizoh / Ando, Yuichiro / Jonishi, Takahumi / Narumi, Kazumasa / Maeda, Yoshihito / Miyao, Masanobu et al. | 2008
- 425
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Low temperature epitaxial growth of Fe3Si on Si(111) substrate through ultra-thin SiO2 filmsUeda, Koji / Kumano, Mamoru / Sadoh, Taizoh / Miyao, Masanobu et al. | 2008
- 428
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Resonant magnetic scattering of polarized X-rays at the Mn 2p edge from Mn0.06Ge0.94 diluted magnetic semiconductorDe Padova, P. / Perfetti, P. / Quaresima, C. / Zema, N. / Grazioli, C. / Spezzani, C. / Testa, A.M. / Fiorani, D. / Olivieri, B. / Mariot, J.-M. et al. | 2008
- 430
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Low-temperature oriented growth in [CoPt/MgO]n multi-layerSadoh, T. / Kurosawa, M. / Kimura, M. / Ueda, K. / Koyanagi, M. / Miyao, M. et al. | 2008
- 434
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ALD growth, thermal treatments and characterisation of Al2O3 layersGhiraldelli, E. / Pelosi, C. / Gombia, E. / Chiavarotti, G. / Vanzetti, L. et al. | 2008
- 437
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Bulk defects in nano-crystalline and in non-crystalline HfO2-based thin film dielectricsLee, S. / Seo, H. / Lucovsky, G. / Fleming, L.B. / Ulrich, M.D. / Lüning, J. et al. | 2008
- 441
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Structural investigation of the LaAlO3(110) surfaceMortada, Hussein / Derivaz, Mickael / Dentel, Didier / Bischoff, Jean-Luc et al. | 2008
- 444
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Optical and electrical properties of negatively charged aluminium oxynitride filmsJang, Kyungsoo / Jung, Sungwook / Lee, Jeoungin / Lee, Kwangsoo / Kim, Jaehong / Son, Hyukjoo / Yi, Junsin et al. | 2008
- 447
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Study of silicon/oxides interfaces by means of Si2p resonant photoemissionTallarida, Massimo / Schmeisser, Dieter et al. | 2008
- 450
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Growth and structural characterization of cerium oxide thin films realized on Si(111) substrates by on-axis r.f. magnetron sputteringTa, M.-T. / Briand, D. / Guhel, Y. / Bernard, J. / Pesant, J.C. / Boudart, B. et al. | 2008
- 453
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Ellipsometric analysis of mixed metal oxides thin filmsBuiu, O. / Davey, W. / Lu, Y. / Mitrovic, I.Z. / Hall, S. et al. | 2008
- 456
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Gate leakage properties in (Al2O3/HfO2/Al2O3) dielectric of MOS devicesAbdi-Ben Nasrallah, S. / Bouazra, A. / Poncet, A. / Said, M. et al. | 2008
- 459
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Chemical and optical profiling of ultra thin high-k dielectrics on siliconBernardini, S. / MacKenzie, M. / Buiu, O. / Bailey, P. / Noakes, T.C.Q. / Davey, W.M. / Hamilton, B. / Hall, S. et al. | 2008
- 462
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Engineering of interfacial layer between HfAl2O5 dielectric film and Si with a Ti-capping layerCheng, Xinhong / Song, Zhaorui / Xing, Yumei / Yu, Yuehui / Shen, Dashen et al. | 2008
- 465
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Influence of preparing process on total-dose radiation response of high-k Hf-based gate dielectricsSong, Zhaorui / Cheng, Xinhong / Zhang, Enxia / Xing, Yumei / Yu, Yuehui / Zhang, Zhengxuan / Wang, Xi / Shen, Dashen et al. | 2008
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Editorial Board| 2008
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Photo| 2008