Materials and Processing - Improvement of CBRAM Resistance Window by Scaling Down Electrode Size in Pure-GeTe Film (English)
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In:
IEEE electron device letters
;
30
, 2
; 120-122
;
2009
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ISSN:
- Article (Journal) / Print
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Title:Materials and Processing - Improvement of CBRAM Resistance Window by Scaling Down Electrode Size in Pure-GeTe Film
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Contributors:
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Published in:IEEE electron device letters ; 30, 2 ; 120-122
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Publisher:
- New search for: IEEE
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Place of publication:New York, NY
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Publication date:2009
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ISSN:
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ZDBID:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
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- New search for: 53.51
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Source:
Table of contents – Volume 30, Issue 2
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 99
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EDITORIAL - Proper Referencing of Prior ArtJindal, R.P. et al. | 2009
- 100
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LETTERS - Compound Semiconductor Devices - Anomalous Kink Effect in GaN High Electron Mobility TransistorsMeneghesso, G. et al. | 2009
- 103
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Reducing Thermal Resistance of AlGaN-GaN Electronic Devices Using Novel Nucleation LayersRiedel, G.J. et al. | 2009
- 107
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High-Performance 0.1-µm Gate AlGaN-GaN HEMTs on Silicon With Low-Noise Figure at 20 GHzSun, H. et al. | 2009
- 110
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Silane-Ammonia Surface Passivation for Gallium Arsenide Surface-Channel N-MOSFETsChin, H.-C. et al. | 2009
- 113
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N-Face GaN-AlGaN HEMTs Fabricated Through Layer Transfer TechnologyChung, J.W. et al. | 2009
- 117
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Mesoscopic EMR Device Magnetic Sensitivity in I-V-I-V ConfigurationBoone, T.D. et al. | 2009
- 120
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Materials and Processing - Improvement of CBRAM Resistance Window by Scaling Down Electrode Size in Pure-GeTe FilmChoi, S.-J. et al. | 2009
- 123
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A Low-Temperature Microwave Anneal Process for Boron-Doped Ultrathin Ge Epilayer on Si SubstrateLee, Y.-J. et al. | 2009
- 126
-
Dynamic Resistance — A Metric for Variability Characterization of Phase-Change MemoryRajendran, B. et al. | 2009
- 130
-
Improved Electrical Performance of MILC Poly-Si TFTs Using CF4 Plasma by Etching Surface of ChannelChang, C.-P. et al. | 2009
- 133
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Molecular Electronics - Small-Subthreshold-Swing and Low-Voltage Flexible Organic Thin-Film Transistors Which Use HfLaO as the Gate DielectricChang, M.F. et al. | 2009
- 136
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Silicon Alloys and Thin Film Devices - Negative Differential Resistance in Buried-Channel GexC1-x pMOSFETsLiu, E.-S. et al. | 2009
- 139
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Characteristics of Gate-All-Around Twin Poly-Si Nanowire Thin-Film TransistorsSheu, J.-T. et al. | 2009
- 142
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A 10-kV Monolithic Darlington Transistor With βforced of 336 in 4H-SiCZhang, Q. et al. | 2009
- 145
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Ultrathin Si Thin-Film Transistor on GlassCheon, J.H. et al. | 2009
- 148
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Silicon and Elemental Semiconductor Devices - First Internal Spacers' Introduction in Record High ION-IOFF TiN-HfO2 Gate Multichannel MOSFET Satisfying Both High-Performance and Low Standby Power RequirementsBernard, E. et al. | 2009
- 152
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A Comparative NBTI Study of HfO2, HfSiOx, and SiON p-MOSFETs Using UF-OTF IDLIN TechniqueDeora, S. et al. | 2009
- 155
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The Effect of Negative VTH of NAND Flash Memory Cells on Data Retention CharacteristicsPark, M. et al. | 2009
- 158
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Bilayer PseudoSpin Field-Effect Transistor (BiSFET): A Proposed New Logic DeviceBanerjee, S.K. et al. | 2009
- 161
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The Electrical and Interfacial Properties of Metal-High-κ Oxide-Semiconductor Field-Effect Transistors With LaAlO3 Gate DielectricChang, I.Y.-K. et al. | 2009
- 165
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A Novel Hot-Electron Programming Method in a Buried Diffusion Bit-Line SONOS Memory by Utilizing Nonequilibrium Charge TransportWang, T. et al. | 2009
- 168
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Oscillatory Transmission Line Pulsing for Characterization of Device Transient ResponseDi Sarro, J.P. et al. | 2009
- 171
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Effect of SiN on Performance and Reliability of Charge Trap Flash (CTF) Under Fowler-Nordheim Tunneling Program-Erase OperationSandhya, C. et al. | 2009
- 174
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Direct Field Effect of Neighboring Cell Transistor on Cell-to-Cell Interference of NAND Flash Cell ArraysPark, M. et al. | 2009
- 178
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Can Atmospheric Neutrons Induce Soft Errors in NAND Floating Gate Memories?Cellere, G. et al. | 2009
- 181
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Characterization of Polymetal Gate Transistors With Low-Temperature Atomic-Layer-Deposition-Grown Oxide SpacerLee, G.-W. et al. | 2009
- 185
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RF Noise of 65-nm MOSFETs in the Weak-to-Moderate-Inversion RegionShi, J. et al. | 2009
- 189
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Gate-Induced Drain-Leakage (GIDL) Programming Method for Soft-Programming-Free Operation in Unified RAM (DRAM)Han, J.-W. et al. | 2009
- 192
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Experimental Results of ON-State Resistance Reduction by STI Fingers in LDMOSFETSu, R.-Y. et al. | 2009
- 195
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Nickel Salicided Source-Drain Extensions for Performance Improvement in Ultrascaled (Sub 10 nm) Si-Nanowire TransistorsJiang, Y. et al. | 2009
- 198
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IEEE ELECTRON DEVICES SOCIETY, MEETINGS CALENDAR| 2009
- 200
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Information for Authors| 2009
- 201
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ANNOUNCEMENTS - Call for Papers — Special Issue on Light Emitting Diodes| 2009
- 202
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Call for Papers — Special Issue on Compact Interconnect Models for Giga Scale Integration| 2009
- 203
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Call for Papers — Transducers 2009| 2009