High-power and broadly tunable GaSb-based optically pumped VECSELs emitting near 2μm (English)
- New search for: Paajaste, Jonna
- New search for: Paajaste, Jonna
- New search for: Suomalainen, Soile
- New search for: Koskinen, Riku
- New search for: Härkönen, Antti
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- New search for: Pessa, Markus
In:
Journal of crystal growth
;
311
, 7
; 1917-1919
;
2009
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ISSN:
- Article (Journal) / Print
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Title:High-power and broadly tunable GaSb-based optically pumped VECSELs emitting near 2μm
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Contributors:Paajaste, Jonna ( author ) / Suomalainen, Soile / Koskinen, Riku / Härkönen, Antti / Guina, Mircea / Pessa, Markus
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Published in:Journal of crystal growth ; 311, 7 ; 1917-1919
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Publisher:
- New search for: Elsevier
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Place of publication:Amsterdam [u.a.]
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Publication date:2009
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ISSN:
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ZDBID:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
- New search for: 38.31 / 33.61 / 35.90
- Further information on Basic classification
- New search for: 535/3475
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Keywords:
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Source:
Table of contents – Volume 311, Issue 7
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1621
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Editor's prefaceWasilewski, Z.R. / Beresford, R. / Gupta, J.A. et al. | 2009
- 1623
-
Fifteenth International Conference on molecular beam epitaxyTiedje, Tom / Tu, Charles W. / Cheng, Norman K.Y. / Wicks, Gary et al. | 2009
- 1623
-
Fifteenth International Conference on molecular beam epitaxy:Vancouver, BC, Canada, August 7-14, 2008Tiedje, T. / Tu, C. W. / Cheng, N. K. / Wicks, G. et al. | 2009
- 1625
-
Quantum dot lasers: From promise to high-performance devicesBhattacharya, P. / Mi, Z. / Yang, J. / Basu, D. / Saha, D. et al. | 2008
- 1632
-
Nitride-based laser diodes by plasma-assisted MBE—From violet to green emissionSkierbiszewski, C. / Wasilewski, Z.R. / Grzegory, I. / Porowski, S. et al. | 2009
- 1640
-
Theoretical and experimental molecular beam angular distribution studies for gas injection in ultra-high vacuumIsnard, L. / Arès, R. et al. | 2008
- 1646
-
Unintentional aluminum incorporation related to the introduction of nitrogen gas during the plasma-assisted molecular beam epitaxyIshikawa, F. / Wu, S.D. / Kato, M. / Uchiyama, M. / Higashi, K. / Kondow, M. et al. | 2008
- 1650
-
Study of the oxygen incorporation in Al0.2Ga0.3In0.5P:Be layers grown by MBE employing a P-cracker cellSoubervielle-Montalvo, C. / Mishournyi, V. / de Anda, F. / Gorbatchev, A. / Hernández, I.C. / Gallardo, S. / Kudriatsev, Y. / López-López, M. / Méndez-García, V.H. et al. | 2008
- 1655
-
Gallium beam analysis and implications for the growth of ultra-high-mobility GaAs/AlGaAs heterostructuresSchmult, Stefan / Taylor, Samuel / Dietsche, Werner et al. | 2008
- 1658
-
MBE growth of ultra-low disorder 2DEG with mobility exceeding 35×106cm2/VsUmansky, V. / Heiblum, M. / Levinson, Y. / Smet, J. / Nübler, J. / Dolev, M. et al. | 2008
- 1658
-
MBE growth of ultra-low disorder 2DEG with mobility exceeding 35x106cm2/VsUmansky, V. / Heiblum, M. / Levinson, Y. / Smet, J. / Nubler, J. / Dolev, M. et al. | 2009
- 1662
-
Bandedge absorption of GaAsN films measured by the photothermal deflection spectroscopyBeaudoin, M. / Chan, I.C.W. / Beaton, D. / Elouneg-Jamroz, M. / Tiedje, T. / Whitwick, M. / Young, E.C. / Young, J.F. / Zangenberg, N. et al. | 2008
- 1666
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Study of AlGaAs/GaAs quantum wells grown by molecular beam epitaxy on GaAs substrates subjected to different treatmentsContreras-Guerrero, R. / Guillen-Cervantes, A. / Rivera-Alvarez, Z. / Pulzara-Mora, A. / Gallardo-Hernandez, S. / Kudriatsev, Y. / Sanchez-Resendiz, V.M. / Rojas-Ramirez, J.S. / Cruz-Hernandez, E. / Méndez-García, V.H. et al. | 2008
- 1671
-
Molecular beam epitaxy in a high-volume GaAs fabRogers, T.J. et al. | 2008
- 1676
-
Design elements affecting wafer temperature uniformity in multi-wafer production MBE systemsRogers, T.J. / Shelton, W.A. / Conroy, C. et al. | 2008
- 1680
-
Strained quantum wells in scrolled structures studied by μ-photoluminescenceHey, R. / Ramsteiner, M. / Santos, P.V. / Friedland, K.-J. et al. | 2008
- 1680
-
Strained quantum wells in scrolled structures studied by m-photoluminescenceHey, R. / Ramsteiner, M. / Santos, P. V. / Friedland, K. J. et al. | 2009
- 1680
-
Strained quantum wells in scrolled structures studied by mu-photoluminescenceHey, R. / Ramsteiner, M. / Santos, P.V. / Friedland, K.J. et al. | 2009
- 1684
-
A study of the doping influence on strain relaxation of graded composition InGaAs layers grown by molecular beam epitaxyTångring, I. / Song, Y.X. / Lai, Z.H. / Wang, S.M. / Sadeghi, M. / Larsson, A. et al. | 2008
- 1688
-
Critical thickness of MBE-grown Ga1−xInxSb (x<0.2) on GaSbNilsen, T.A. / Breivik, M. / Selvig, E. / Fimland, B.O. et al. | 2008
- 1688
-
Critical thickness of MBE-grown Ga1-xInxSb (x less-than 0.2) on GaSbNilsen, T.A. / Breivik, M. / Selvig, E. / Fimland, B.O. et al. | 2009
- 1692
-
High-temperature growth of heteroepitaxial InSb films on Si(111) substrate via the InSb bi-layerMori, M. / Saito, M. / Nagashima, K. / Ueda, K. / Yoshida, T. / Maezawa, K. et al. | 2008
- 1696
-
Transport properties of InSb and InAs0.1Sb0.9 thin films sandwiched between Al0.1In0.9Sb layers grown by molecular beam epitaxyShibasaki, Ichiro / Geka, Hirotaka / Okamoto, Atsushi et al. | 2008
- 1700
-
Molecular beam epitaxy of AlAsSb/AlAs/InGaAs coupled double quantum wells with extremely thin AlAs center barrierGozu, Shin-ichiro / Mozume, Teruo / Ishikawa, Hiroshi et al. | 2008
- 1703
-
Growth of InAs/GaSb type-II superlattices by gas-source molecular-beam epitaxyLi, J. / Gong, Q. / Li, S.G. / Li, A.Z. / Lin, C. et al. | 2008
- 1707
-
High-resolution X-ray diffraction analysis of InGaAs/AlAsSb coupled double quantum wells grown by molecular beam epitaxyMozume, T. / Gozu, S. et al. | 2008
- 1711
-
Hall effect and magnetoresistance analysis by electron–hole coexisting model in AlInSb/InAsSb quantum wellsManago, T. / Nisizako, N. / Ishida, S. / Geka, H. / Shibasaki, I. et al. | 2008
- 1715
-
Influence of arsenic flux on the annealing properties of GaInNAs quantum wells for long wavelength laser applications around 1.6mmBisping, D. / Pucicki, D. / Fischer, M. / Hofling, S. / Forchel, A. et al. | 2009
- 1715
-
Influence of arsenic flux on the annealing properties of GaInNAs quantum wells for long wavelength laser applications around 1.6μmBisping, Dirk / Pucicki, Damian / Fischer, Marc / Höfling, Sven / Forchel, Alfred et al. | 2008
- 1715
-
Influence of arsenic flux on the annealing properties of GaInNAs quantum wells for long wavelength laser applications around 1.6 micrometerBisping, D. / Pucicki, D. / Fischer, M. / Hofling, S. / Forchel, A. et al. | 2009
- 1719
-
GaInAsN growth studies for InP-based long-wavelength laser applications (TUA3-3)Gründl, Tobias / Böhm, Gerhard / Meyer, Ralf / Amann, Markus-Christian et al. | 2008
- 1723
-
Growth and characterization of GaInNAs by molecular beam epitaxy using a nitrogen irradiation methodZhao, H. / Wang, S.M. / Zhao, Q.X. / Sadeghi, M. / Larsson, A. et al. | 2008
- 1728
-
The role of Sb and N ions on the morphology and localization of (Ga,In) (N,As) quantum wellsGuzmán, A. / Luna, E. / Ishikawa, F. / Trampert, A. et al. | 2008
- 1733
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MBE growth and characterization of TlInGaAsN double quantum well structuresKrishnamurthy, D. / Shanthi, S. / Kim, K.M. / Sakai, Y. / Ishimaru, M. / Hasegawa, S. / Asahi, H. et al. | 2008
- 1739
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Interface properties of (Ga,In)(N,As) and (Ga,In)(As,Sb) materials systems grown by molecular beam epitaxyLuna, E. / Ishikawa, F. / Satpati, B. / Rodriguez, J.B. / Tournié, E. / Trampert, A. et al. | 2008
- 1745
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Optical characterization of InGaAsN layers grown on InP substratesYoshikawa, M. / Miura, K. / Iguchi, Y. / Kawamura, Y. et al. | 2008
- 1748
-
MBE growth of GaAsN/GaP(N) quantum wells with abrupt heterointerfaces for photonics applications on Si substratesUmeno, K. / Furukawa, Y. / Wakahara, A. / Noma, R. / Okada, H. / Yonezu, H. / Takagi, Y. / Kan, H. et al. | 2008
- 1754
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Molecular beam epitaxy growth of bulk GaNAsSb on Ge/graded-SiGe/Si substrateNg, Tien Khee / Yoon, Soon Fatt / Tan, Kian Hua / Chen, Kah Pin / Tanoto, Hendrix / Lew, Kim Luong / Wicaksono, Satrio / Loke, Wan Khai / Dohrman, Carl / Fitzgerald, Eugene A. et al. | 2008
- 1758
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Real time extraction of quantum dot size from RHEED intensity profilesRajapaksha, C. / Freundlich, A. et al. | 2008
- 1761
-
In situ X-ray diffraction during stacking of InAs/GaAs(001) quantum dot layers and photoluminescence spectroscopyTakahasi, M. / Kaizu, T. et al. | 2008
- 1764
-
Surface compositional mapping of self-assembled InAs/GaAs quantum ringsBiasiol, G. / Magri, R. / Heun, S. / Locatelli, A. / Mentes, T.O. / Sorba, L. et al. | 2008
- 1767
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Differential absorption spectroscopy on coupled InGaAs quantum dotsChuang, K.Y. / Chen, C.Y. / Tzeng, T.E. / Feng, David J.Y. / Lay, T.S. et al. | 2008
- 1770
-
Growth of InGaAs/GaNAs strain-compensated quantum dot superlattice on GaAs (311)B by molecular beam epitaxyOshima, Ryuji / Shoji, Yasushi / Takata, Ayami / Okada, Yoshitaka et al. | 2008
- 1774
-
Optical studies on InAs/InGaAs/GaNAs strain-compensated quantum dots grown on GaAs (001) by molecular beam epitaxyTakata, Ayami / Oshima, Ryuji / Shoji, Yasushi / Okada, Yoshitaka et al. | 2008
- 1778
-
Effect of crystallographic orientation of microchannel on low-angle incidence microchannel epitaxy on (001) GaAs substrateNaritsuka, Shigeya / Matsuoka, Shuji / Ishida, Yuji / Maruyama, Takahiro et al. | 2008
- 1783
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Control of dot geometry and photoluminescence linewidth of InGaAs/GaAs quantum dots by growth conditionsGushterov, A. / Lingys, L. / Reithmaier, J.P. et al. | 2008
- 1787
-
Blue-shift emission in InP-based quantum dots by SiO2 sputtering and rapid thermal annealingHsu, T.C. / Tzeng, T.E. / Lin, E.Y. / Chuang, K.Y. / Chiu, C.L. / Lay, T.S. et al. | 2008
- 1791
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The effects of rapid thermal annealing on doubled quantum dots grown by molecular beam epitaxySuraprapapich, S. / Shen, Y.M. / Fainman, Y. / Horikoshi, Y. / Panyakeow, S. / Tu, C.W. et al. | 2008
- 1795
-
The Kondo effect observed up to TK∼80K in self-assembled InAs quantum dots laterally coupled to nanogap electrodesShibata, K. / Hirakawa, K. et al. | 2008
- 1799
-
Improving size distribution of InAs quantum dots for intersubband devicesAndrews, Aaron Maxwell / Klang, Pavel / Krzyzanowski, Remigiusz / Schramböck, Matthias / Detz, Hermann / Schrenk, Werner / Strasser, Gottfried et al. | 2008
- 1803
-
Growth and fabrication of quantum dots superluminescent diodes using the indium-flush technique: A new approach in controlling the bandwidthHaffouz, S. / Raymond, S. / Lu, Z.G. / Barrios, P.J. / Roy-Guay, D. / Wu, X. / Liu, J.R. / Poitras, D. / Wasilewski, Z.R. et al. | 2008
- 1807
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Fast carrier relaxation of self-assembled InAs quantum dots embedded in strain-relaxed barriers for ultrafast nonlinear optical switching applicationsKitada, Takahiro / Mukai, Takuya / Takahashi, Tomoya / Morita, Ken / Isu, Toshiro et al. | 2008
- 1807
-
Fast carrier relaxation of self-assembled InAs quantum dots embedded in strain-relaxed barriers for ultrafast nonlinear optical switching applicationsKitada, Takahiro et al. | 2009
- 1807
-
Fast carrier relaxation of self-assembled InAs quantum dots embedded in strain-relaxed Formula Not Shown barriers for ultrafast nonlinear optical switching applicationsKitada, T. / Mukai, T. / Takahashi, T. / Morita, K. / Isu, T. et al. | 2009
- 1811
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MBE growth of In(Ga)As quantum dots for entangled light emissionNicoll, C.A. / Salter, C.L. / Stevenson, R.M. / Hudson, A.J. / Atkinson, P. / Cooper, K. / Shields, A.J. / Ritchie, D.A. et al. | 2008
- 1815
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Gallium-assisted deoxidation of patterned substrates for site-controlled growth of InAs quantum dotsAtkinson, P. / Schmidt, O.G. et al. | 2008
- 1819
-
Site-controlled InAs quantum dot formation grown on the templates fabricated by the Nano-Jet Probe methodOhkouchi, S. / Ozaki, N. / Sugimoto, Y. / Ishikawa, H. / Asakawa, K. et al. | 2008
- 1822
-
Formation of linear InAs/InGaAsP/InP (100) quantum dot arrays by self-organized anisotropic strain engineering in chemical beam epitaxySritirawisarn, N. / van Otten, F.W.M. / Eijkemans, T.J. / Nötzel, R. et al. | 2008
- 1825
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Droplet epitaxy of GaAs quantum dots on (001), vicinal (001), (110), and (311)A GaAsHeyn, Ch. / Stemmann, A. / Schramm, A. / Hansen, W. et al. | 2008
- 1828
-
High-density GaAs/AlGaAs quantum dots formed on GaAs (311)A substrates by droplet epitaxyMano, T. / Kuroda, T. / Mitsuishi, K. / Noda, T. / Sakoda, K. et al. | 2008
- 1832
-
Formation of In0.5Ga0.5As ring-and-hole structure by droplet molecular beam epitaxyPankaow, N. / Panyakeow, S. / Ratanathammaphan, S. et al. | 2008
- 1836
-
Spontaneous formation of a cluster of InAs dots along a ring-like zone on GaAs (100) by droplet epitaxyNoda, T. / Mano, T. / Kuroda, T. / Sakoda, K. / Sakaki, H. et al. | 2008
- 1839
-
Nanohole formation on AlGaAs surfaces by local droplet etching with galliumHeyn, Ch. / Stemmann, A. / Hansen, W. et al. | 2008
- 1843
-
Fabrication of In0.15Ga0.85As nanohloes on GaAs by droplet molecular beam epitaxyBoonpeng, P. / Panyakeow, S. / Ratanathammaphan, S. et al. | 2008
- 1847
-
Growth and structural characterization of GaAs/GaAsSb axial heterostructured nanowiresDheeraj, D.L. / Patriarche, G. / Zhou, H. / Harmand, J.C. / Weman, H. / Fimland, B.O. et al. | 2008
- 1851
-
InGaAs quantum wires grown on (100)InP substratesTzeng, T.E. / Chen, C.Y. / Feng, David J. / Lay, T.S. et al. | 2008
- 1855
-
Chemical beam epitaxy of highly ordered network of tilted InP nanowires on siliconRadhakrishnan, G. / Freundlich, A. / Fuhrmann, B. et al. | 2008
- 1859
-
Growth of one-dimensional III–V structures on Si nanowires and pre-treated planar Si surfacesDetz, H. / Klang, P. / Andrews, A.M. / Lugstein, A. / Steinmair, M. / Hyun, Y.J. / Bertagnolli, E. / Schrenk, W. / Strasser, G. et al. | 2008
- 1863
-
Growth of GaInNAs and 1.3μm edge emitting lasers by molecular beam epitaxyWang, S.M. / Adolfsson, G. / Zhao, H. / Wei, Y.Q. / Gustavsson, J. / Zhao, Q.X. / Sadeghi, M. / Larsson, A. et al. | 2008
- 1863
-
Growth of GaInNAs and 1.3mm edge emitting lasers by molecular beam epitaxyWang, S. M. / Adolfsson, G. / Zhao, H. / Wei, Y. Q. / Gustavsson, J. / Zhao, Q. X. / Sadeghi, M. / Larsson, A. et al. | 2009
- 1868
-
MBE grown GaInNAs-based multi-Watt disk lasersKorpijärvi, V.-M. / Guina, M. / Puustinen, J. / Tuomisto, P. / Rautiainen, J. / Härkönen, A. / Tukiainen, A. / Okhotnikov, O. / Pessa, M. et al. | 2008
- 1872
-
light emitting diodesLewis, R.B. / Beaton, D.A. / Lu, Xianfeng. / Tiedje, T. et al. | 2009
- 1872
-
light emitting diodesLewis, R.B. et al. | 2009
- 1872
-
Formula Not Shown light emitting diodesLewis, R. B. / Beaton, D. A. / Lu, X. / Tiedje, T. et al. | 2009
- 1876
-
Improved performance of GaInNAs solar cells grown by molecular-beam epitaxy using increased growth rate instead of surfactantsPtak, A.J. / France, R. / Jiang, C.-S. / Romero, M.J. et al. | 2008
- 1881
-
Performance of gas source MBE-grown wavelength-extended InGaAs photodetectors with different buffer structuresZhang, Y.G. / Gu, Y. / Tian, Z.B. / Wang, K. / Li, A.Z. / Zhu, X.R. / Zheng, Y.L. et al. | 2008
- 1885
-
Photovoltaic characteristics of InAs/InGaAs/GaAs QD heterostructuresNgo, C.Y. / Yoon, S.F. / Loke, W.K. / Ng, T.K. / Chua, S.J. et al. | 2008
- 1889
-
Development of uncooled miniaturized InSb photovoltaic infrared sensors for temperature measurementsKuze, N. / Morishita, T. / Camargo, E.G. / Ueno, K. / Yokoyama, A. / Sato, M. / Endo, H. / Yanagita, Y. / Tokuo, S. / Goto, H. et al. | 2008
- 1893
-
High detectivity AlGaAsSb/InGaAsSb photodetectors grown by molecular beam epitaxy with cutoff wavelength up to 2.6μmShao, H. / Torfi, A. / Li, W. / Moscicka, D. / Wang, W.I. et al. | 2008
- 1893
-
High detectivity AlGaAsSb/InGaAsSb photodetectors grown by molecular beam epitaxy with cutoff wavelength up to 2.6mmShao, H. / Torfi, A. / Li, W. / Moscicka, D. / Wang, W. I. et al. | 2009
- 1897
-
Optimizing residual carriers in undoped InAs/GaSb superlattices for high operating temperature mid-infrared detectorsHaugan, H.J. / Elhamri, S. / Ullrich, B. / Szmulowicz, F. / Brown, G.J. / Mitchel, W.C. et al. | 2008
- 1901
-
Optimization of InAs/GaSb type-II superlattice interfaces for long-wave (∼8μm) infrared detectionKhoshakhlagh, A. / Plis, E. / Myers, S. / Sharma, Y.D. / Dawson, L.R. / Krishna, S. et al. | 2008
- 1901
-
Optimization of InAs/GaSb type-II superlattice interfaces for long-wave (8mm) infrared detectionKhoshakhlagh, A. / Plis, E. / Myers, S. / Sharma, Y. D. / Dawson, L. R. / Krishna, S. et al. | 2009
- 1905
-
MBE growth of mid-IR diode lasers based on InAs/GaSb/InSb short-period superlattice active zonesGassenq, A. / Cerutti, L. / Baranov, A.N. / Tournié, E. et al. | 2008
- 1908
-
MBE growth of active regions for electrically pumped, cw-operating GaSb-based VCSELsKashani-Shirazi, K. / Bachmann, A. / Boehm, G. / Ziegler, S. / Amann, M.-C. et al. | 2008
- 1912
-
GaSb-based VCSELs emitting in the mid-infrared wavelength range (2-3mm) grown by MBECerutti, L. / Ducanchez, A. / Narcy, G. / Grech, P. / Boissier, G. / Garnache, A. / Tournie, E. / Genty, F. et al. | 2009
- 1912
-
GaSb-based VCSELs emitting in the mid-infrared wavelength range (2–3μm) grown by MBECerutti, L. / Ducanchez, A. / Narcy, G. / Grech, P. / Boissier, G. / Garnache, A. / Tournié, E. / Genty, F. et al. | 2008
- 1917
-
High-power and broadly tunable GaSb-based optically pumped VECSELs emitting near 2μmPaajaste, Jonna / Suomalainen, Soile / Koskinen, Riku / Härkönen, Antti / Guina, Mircea / Pessa, Markus et al. | 2008
- 1917
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High-power and broadly tunable GaSb-based optically pumped VECSELs emitting near 2mmPaajaste, J. / Suomalainen, S. / Koskinen, R. / Harkonen, A. / Guina, M. / Pessa, M. et al. | 2009
- 1920
-
Quaternary GaInAsSb/AlGaAsSb vertical-external-cavity surface-emitting lasers—A challenge for MBE growthManz, Christian / Yang, Quankui / Rattunde, Marcel / Schulz, Nicola / Rösener, Benno / Kirste, Lutz / Wagner, Joachim / Köhler, Klaus et al. | 2008
- 1923
-
The reproducibility and transferability of a THz quantum cascade laser design between two MBE growth manufacturers’ platformsBeere, H.E. / Freeman, J.R. / Marshall, O.P. / Worrall, C.H. / Ritchie, D.A et al. | 2008
- 1929
-
Precise growth control and characterization of strained AlInAs and GaInAs for quantum cascade lasers by GSMBEGu, Y. / Li, H. / Li, A.Z. / Li, Y.Y. / Wei, L. / Zhang, Y.G. / Wang, K. / Zheng, Y.L. et al. | 2008
- 1932
-
Al(In)As–(Ga)InAs strain-compensated active regions for injectorless quantum cascade lasersBoehm, Gerhard / Katz, Simeon / Meyer, Ralf / Amann, Markus-Christian et al. | 2008
- 1935
-
Optimization of AlInGaAs/InGaAs/InAs strain compensated triangular quantum wells grown by gas source molecular beam epitaxy for laser applications in 2.1–2.4μm rangeGu, Y. / Zhang, Y.G. / Wang, K. / Li, A.Z. / Li, Y.Y. et al. | 2008
- 1935
-
Optimization of AlInGaAs/InGaAs/InAs strain compensated triangular quantum wells grown by gas source molecular beam epitaxy for laser applications in 2.1-2.4mm rangeGu, Y. / Zhang, Y. G. / Wang, K. / Li, A. Z. / Li, Y. Y. et al. | 2009
- 1939
-
Terahertz quantum cascade lasers based onFischer, M. / Scalari, G. / Walther, Ch. / Faist, J. et al. | 2008
- 1939
-
Terahertz quantum cascade lasers based on Formula Not ShownFischer, M. / Scalari, G. / Walther, C. / Faist, J. et al. | 2009
- 1939
-
Terahertz quantum cascade lasers based onFischer, M. et al. | 2009
- 1944
-
Research advances on III–V MOSFET electronics beyond Si CMOSKwo, J. / Hong, M. et al. | 2008
- 1950
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Interface properties of MBE-grown MOS structures with InGaAs/InAlAs buried channel and in-situ high-k oxideOktyabrsky, S. / Tokranov, V. / Koveshnikov, S. / Yakimov, M. / Kambhampati, R. / Bakhru, H. / Moore, R. / Tsai, W. et al. | 2008
- 1954
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Depletion-mode In0.2Ga0.8As/GaAs MOSFET with molecular beam epitaxy grown Al2O3/Ga2O3(Gd2O3) as gate dielectricsLin, C.A. / Lin, T.D. / Chiang, T.H. / Chiu, H.C. / Chang, P. / Hong, M. / Kwo, J. et al. | 2008
- 1958
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Inversion-channel enhancement-mode GaAs MOSFETs with regrown source and drain contactsLiao, Chichih / Cheng, Donald / Cheng, Chienchia / Cheng, K.Y. / Feng, Milton / Chiang, T.H. / Kwo, J. / Hong, M. et al. | 2008
- 1962
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High-quality III–V semiconductor MBE growth on Ge/Si virtual substrates for metal-oxide-semiconductor device fabricationChoi, Donghun / Harris, James S. / Kim, Eunji / McIntyre, Paul C. / Cagnon, Joel / Stemmer, Susanne et al. | 2008
- 1972
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InSb quantum-well structures for electronic device applicationsEdirisooriya, M. / Mishima, T.D. / Gaspe, C.K. / Bottoms, K. / Hauenstein, R.J. / Santos, M.B. et al. | 2008
- 1976
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The growth of high electron mobility InAsSb for application to high electron-mobility transistorsLiao, Chichih / Cheng, K.Y. et al. | 2008
- 1979
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Monolithic integration of InP-based transistors on Si substrates using MBELiu, W.K. / Lubyshev, D. / Fastenau, J.M. / Wu, Y. / Bulsara, M.T. / Fitzgerald, E.A. / Urteaga, M. / Ha, W. / Bergman, J. / Brar, B. et al. | 2008
- 1984
-
Height-selective etching for regrowth of self-aligned contacts using MBEBurek, G.J. / Wistey, M.A. / Singisetti, U. / Nelson, A. / Thibeault, B.J. / Bank, S.R. / Rodwell, M.J.W. / Gossard, A.C. et al. | 2008
- 1988
-
MBE growth and patterned backgating of electron–hole bilayer structuresFarrer, I. / Croxall, A.F. / Gupta, K. Das / Nicoll, C.A. / Beere, H.E. / Thangaraj, M. / Waldie, J. / Ritchie, D.A. / Pepper, M. et al. | 2008
- 1994
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Nitridation of (111)Al substrates for GaN growth by molecular beam epitaxySawadaishi, Masashi / Taguchi, Satoshi / Sasaya, Kouki / Honda, Tohru et al. | 2008
- 1997
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Growth of free-standing GaN layer on Si(111) substrateYang, Tsung Hsi / Ku, Jui Tai / Chang, Jet-Rung / Shen, Shih-Guo / Chen, Yi-Cheng / Wong, Yuen Yee / Chou, Wu Ching / Chen, Chien-Ying / Chang, Chun-Yen et al. | 2008
- 2002
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Strain engineering in GaN layers grown on silicon by molecular beam epitaxy: The critical role of growth temperatureCordier, Y. / Baron, N. / Chenot, S. / Vennéguès, P. / Tottereau, O. / Leroux, M. / Semond, F. / Massies, J. et al. | 2008
- 2006
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GaN on Si with nm-thick single-crystal Sc2O3 as a template using molecular beam epitaxyLee, W.C. / Lee, Y.J. / Kwo, J. / Hsu, C.H. / Lee, C.H. / Wu, S.Y. / Ng, H.M. / Hong, M. et al. | 2008
- 2010
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Effect of AlN interlayers in the structure of GaN-on-Si grown by plasma-assisted MBEAdikimenakis, A. / Sahonta, S.-L. / Dimitrakopulos, G.P. / Domagala, J. / Kehagias, Th. / Komninou, Ph. / Iliopoulos, E. / Georgakilas, A. et al. | 2008
- 2016
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The growth and characterization of an InN layer on AlN/Si (111)Kim, M.D. / Park, S.R. / Oh, J.E. / Kim, S.G. / Yang, W.C. / Koo, Bun-Hei et al. | 2008
- 2021
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Effect of the MgO substrate on the growth of GaNSuzuki, R. / Kawaharazuka, A. / Horikoshi, Y. et al. | 2009
- 2025
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Growth of GaN with warm ammonia by molecular beam epitaxyKawaharazuka, A. / Yoshizaki, T. / Ploog, K.H. / Horikoshi, Y. et al. | 2009
- 2029
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Advances in quality and uniformity of (Al,Ga)N/GaN quantum wells grown by molecular beam epitaxy with plasma sourceNatali, F. / Cordier, Y. / Chaix, C. / Bouchaib, P. et al. | 2008
- 2033
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Gallium adlayer adsorption and desorption studies with real-time analysis by spectroscopic ellipsometry and RHEED on A-, M-, and C-plane GaN grown by PAMBEMisra, P. / Boney, C. / Starikov, D. / Bensaoula, A. et al. | 2008
- 2039
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Carbon doping of non-polar cubic GaN by CBr4As, D.J. / Tschumak, E. / Pöttgen, H. / Kasdorf, O. / Gerlach, J.W. / Karl, H. / Lischka, K. et al. | 2008
- 2042
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Incorporation sites and luminescence characterizations of Er-doped GaN grown by molecular beam epitaxyChen, Shaoqiang / Seo, Jongwon / Sawahata, Junji / Akimoto, Katsuhiro et al. | 2008
- 2046
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Structural properties of AlCrN, GaCrN and InCrNKimura, S. / Emura, S. / Tokuda, K. / Zhou, Y.K. / Hasegawa, S. / Asahi, H. et al. | 2008
- 2049
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Comparison of surface morphologies in GaN films grown by rf-MBE and MOCVD on vicinal sapphire (0001) substratesShen, X.Q. / Shimizu, M. / Okumura, H. / Xu, F.J. / Shen, B. / Zhang, G.Y. et al. | 2008
- 2054
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Growth of ScN epitaxial films by plasma-assisted molecular beam epitaxyHall, J.L. / Moram, M.A. / Sanchez, A. / Novikov, S.V. / Kent, A.J. / Foxon, C.T. / Humphreys, C.J. / Campion, R.P. et al. | 2009
- 2058
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InN films and nanostructures grown on Si (111) by RF-MBEAjagunna, A.O. / Adikimenakis, A. / Iliopoulos, E. / Tsagaraki, K. / Androulidaki, M. / Georgakilas, A. et al. | 2008
- 2063
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Improved Ti-mask selective-area growth (SAG) by rf-plasma-assisted molecular beam epitaxy demonstrating extremely uniform GaN nanocolumn arraysKishino, Katsumi / Sekiguchi, Hiroto / Kikuchi, Akihiko et al. | 2008
- 2069
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Polarization effects in self-organized InGaN/GaN quantum dots grown by RF-plasma-assisted molecular beam epitaxyZhang, M. / Moore, J. / Mi, Z. / Bhattacharya, P. et al. | 2008
- 2073
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Advances in InN epitaxy and its material control by MBE towards novel InN-based QWsYoshikawa, Akihiko / Che, Songbek / Ishitani, Yoshihiro / Wang, Xinqiang et al. | 2008
- 2080
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AlGaN quantum well structures for deep-UV LEDs grown by plasma-assisted MBE using sub-monolayer digital-alloying techniqueJmerik, V.N. / Shubina, T.V. / Mizerov, A.M. / Belyaev, K.G. / Sakharov, A.V. / Zamoryanskaya, M.V. / Sitnikova, A.A. / Davydov, V.Yu. / Kop’ev, P.S. / Lutsenko, E.V. et al. | 2008
- 2084
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GaN metal-oxide-semiconductor diodes with molecular beam epitaxy-Al2O3 as a template followed by atomic layer deposition growthChang, Y.H. / Chiu, H.C. / Chang, W.H. / Kwo, J. / Tsai, C.C. / Hong, J.M. / Hong, M. et al. | 2008
- 2087
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Selectively grown AlGaN/GaN HEMTs on Si(111) substrates for integration with silicon microelectronicsHaffouz, S. / Semond, F. / Bardwell, J.A. / Lester, T. / Tang, H. et al. | 2008
- 2091
-
Mechanisms of ammonia—MBE growth of GaN on SiC for transport devicesTang, H. / Rolfe, S. / Semond, F. / Bardwell, J.A. / Baribeau, J.M. et al. | 2008
- 2096
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The de-oxidation of a ZnTe surface by hydrogen treatmentKyoh, K. / Ichinohe, Y. / Honma, K. / Kimura, Na. / Kimura, No. / Sawada, T. / Suzuki, K. / Imai, K. / Saito, H. / Korostelin, Yu. V. et al. | 2008
- 2099
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A comparison of ZnMgSSe and MgS wide bandgap semiconductors used as barriers: Growth, structure and luminescence propertiesMoug, R.T. / Bradford, C. / Izdebski, F. / Davidson, I. / Curran, A. / Warburton, R.J. / Prior, K.A. / Aouni, A. / Morales, F.M. / Molina, S.I. et al. | 2008
- 2102
-
Photoluminescence properties of Pb1−xSnxTe/CdTe quantum wells grown on (100)-oriented GaAs substrates by molecular beam epitaxyKoike, Kazuto / Hotei, Takanori / Kawaguchi, Ryou / Yano, Mitsuaki et al. | 2008
- 2106
-
Optical properties of ZnSe on GaN (0001) grown by MBEIchinohe, Y. / Kyoh, K. / Honma, K. / Sawada, T. / Suzuki, K. / Kimura, No. / Kimura, Na. / Imai, K. et al. | 2008
- 2109
-
Wide band gap II–VI selenides for short wavelength intersubband devicesShen, A. / Charles, W.O. / Li, B.S. / Franz, K.J. / Gmachl, C. / Zhang, Q. / Tamargo, M.C. et al. | 2008
- 2113
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Growth and properties of wide bandgap MgSe/ZnxCd1−xSe multiple quantum wells for intersubband devices operating at short wavelengthsLi, B.S. / Shen, A. / Charles, W.O. / Zhang, Q. / Tamargo, M.C. et al. | 2008
- 2116
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MBE growth of II–VI materials on GaSb substrates for photovoltaic applicationsWang, S. / Ding, D. / Liu, X. / Zhang, X.-B. / Smith, D.J. / Furdyna, J.K. / Zhang, Y.-H. et al. | 2008
- 2120
-
Compact green laser converter with injection pumping, based on MBE grown II–VI nanostructuresIvanov, S.V. / Lutsenko, E.V. / Sorokin, S.V. / Sedova, I.V. / Gronin, S.V. / Voinilovich, A.G. / Tarasuk, N.P. / Yablonskii, G.P. / Kop’ev, P.S. et al. | 2008
- 2123
-
CdSe quantum dots in ZnSe nanowires as efficient source for single photons up to 220KAichele, Thomas / Tribu, Adrien / Sallen, Gregory / Bocquel, Juanita / Bellet-Amalric, Edith / Bougerol, Catherine / Poizat, Jean-Philippe / Kheng, Kuntheak / André, Régis / Tatarenko, Serge et al. | 2008
- 2128
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Quantum transport and spin–orbit interaction in Al0.1In0.9Sb/InAs0.1Sb0.9 quantum wellsNishizako, N. / Manago, T. / Ishida, S. / Geka, H. / Shibasaki, I. et al. | 2008
- 2132
-
Free carrier induced substrate heating of the epitaxially grown GaMnAsNovák, V. / Olejník, K. / Cukr, M. et al. | 2008
- 2135
-
Mn deposition on GaAs(001)-c(4x4)a reconstructed surfaces: A scanning-tunneling-microscopy studyKomamiya, D. / Okabayashi, J. / Yoshino, J. et al. | 2009
- 2135
-
Mn deposition on GaAs(001)-c(4×4)α reconstructed surfaces: A scanning-tunneling-microscopy studyKomamiya, Daisuke / Okabayashi, Jun / Yoshino, Junji et al. | 2008
- 2135
-
Mn deposition on GaAs(001)-c(4 x 4) alpha reconstructed surfaces: a scanning-tunneling-microscopy studyKomamiya, D. / Okabayashi, J. / Yoshino, J. et al. | 2009
- 2139
-
Group-IV-diluted magnetic semiconductor FexSi1−x thin films grown by molecular beam epitaxySu, W.F. / Gong, L. / Wang, J.L. / Chen, S. / Fan, Y.L. / Jiang, Z.M. et al. | 2008
- 2143
-
Structure and magnetic properties of Gd/Fe layers grown by MBEMiyagawa, H. / Shiraoka, H. / Tani, M. / Fujii, K. / Takahashi, N. / Koshiba, S. / Tanaka, Y. / Tsurumachi, N. / Nakanishi, S. / Itoh, H. et al. | 2008
- 2147
-
Mn distribution behaviors and magnetic properties of GeMn films grown on Si (001) substratesOgawa, Masaaki / Han, Xinhai / Zhao, Zuoming / Wang, Yong / Wang, Kang L. / Zou, Jin et al. | 2008
- 2151
-
Etching enhanced annealing of GaMnAs layersOlejni´k, K. / Novák, V. / Cukr, M. / Mašek, J. / Jungwirth, T. et al. | 2007
- 2155
-
Observation of negative differential resistance from a Schottky-barrier structure embedded with Fe quantum dotsLok, S.K. / Li, B.K. / Wang, J.N. / Wong, G.K.L. / Sou, I.K. et al. | 2008
- 2160
-
Coexistence of ferromagnetism and quantum Hall effect in Mn modulation-doped two-dimensional hole systemsWurstbauer, U. / Soda, M. / Jakiela, R. / Schuh, D. / Weiss, D. / Zweck, J. / Wegscheider, W. et al. | 2008
- 2163
-
Growth of high-quality ZnO films on Al2O3 (0001) by plasma-assisted molecular beam epitaxyPark, J.S. / Hong, S.K. / Im, I.H. / Ha, J.S. / Lee, H.J. / Park, S.H. / Chang, J.H. / Cho, M.W. / Yao, T. et al. | 2008
- 2167
-
Investigation on the ZnO:N films grown on (0001) and (0001¯) ZnO templates by plasma-assisted molecular beam epitaxyPark, S.H. / Chang, J.H. / Minegishi, T. / Park, J.S. / Im, I.H. / Ito, M. / Taishi, T. / Hong, S.K. / Oh, D.C. / Cho, M.W. et al. | 2008
- 2172
-
Compared optical properties of ZnO heteroepitaxial, homoepitaxial 2D layers and nanowiresRobin, I.C. / Marotel, P. / El-Shaer, A.H. / Petukhov, V. / Bakin, A. / Waag, A. / Lafossas, M. / Garcia, J. / Rosina, M. / Ribeaud, A. et al. | 2008
- 2176
-
Intersubband optical transitions in ZnO-based quantum wells grown by plasma-assisted molecular beam epitaxyOhtani, K. / Belmoubarik, M. / Ohno, H. et al. | 2008
- 2179
-
Structure analysis of epitaxial Gd2O3/Si(001) for high-k gate dielectric applicationsWatahiki, Tatsuro / Jenichen, Bernd / Shayduk, Roman / Tinkham, Brad P. / Braun, Wolfgang / Riechert, Henning et al. | 2008
- 2183
-
High κ dielectric single-crystal monoclinic Gd2O3 on GaN with excellent thermal, structural, and electrical propertiesChang, W.H. / Lee, C.H. / Chang, P. / Chang, Y.C. / Lee, Y.J. / Kwo, J. / Tsai, C.C. / Hong, J.M. / Hsu, C.-H. / Hong, M. et al. | 2008
- 2183
-
High k dielectric single-crystal monoclinic Gd2O3 on GaN with excellent thermal, structural, and electrical propertiesChang, W. H. / Lee, C. H. / Chang, P. / Chang, Y. C. / Lee, Y. J. / Kwo, J. / Tsai, C. C. / Hong, J. M. / Hsu, C. H. / Hong, M. et al. | 2009
- 2187
-
Molecular beam epitaxy-grown Al2O3/HfO2 high-κ dielectrics for germaniumLee, W.C. / Chin, B.H. / Chu, L.K. / Lin, T.D. / Lee, Y.J. / Tung, L.T. / Lee, C.H. / Hong, M. / Kwo, J. et al. | 2008
- 2187
-
Molecular beam epitaxy-grown Al2O3/HfO2 high-k dielectrics for germaniumLee, W. C. / Chin, B. H. / Chu, L. K. / Lin, T. D. / Lee, Y. J. / Tung, L. T. / Lee, C. H. / Hong, M. / Kwo, J. et al. | 2009
- 2191
-
Molecular beam epitaxy growth of neodymium-doped yttrium aluminum perovskiteKumaran, R. / Webster, S.E. / Penson, S. / Li, Wei / Tiedje, T. et al. | 2008
- 2195
-
Metal-oxide-semiconductor devices with molecular beam epitaxy-grown Y2O3 on GeChu, L.K. / Lee, W.C. / Huang, M.L. / Chang, Y.H. / Tung, L.T. / Chang, C.C. / Lee, Y.J. / Kwo, J. / Hong, M. et al. | 2008
- 2199
-
Control of thick single crystal erbium oxide growth on (111) siliconSmith, R.S. / Sewell, R.H. / Clark, A. / Atanackovic, P. et al. | 2008
- 2205
-
Fe-layer-induced aligned 1D nanostructure on ZnSe surfaceWang, G. / Lok, S.K. / Chan, S.K. / Wang, C. / Wong, G.K.L. / Sou, I.K. et al. | 2008
- 2208
-
MBE-grown Fe nanowires on a ZnS(100) surfaceLok, S.K. / Chan, S.K. / Wong, G.K.L. / Sou, I.K. et al. | 2008
- 2212
-
Effect of Se/(Ga+In) ratio on MBE grown Cu(In,Ga)Se2 thin film solar cellIslam, M.M. / Sakurai, T. / Ishizuka, S. / Yamada, A. / Shibata, H. / Sakurai, K. / Matsubara, K. / Niki, S. / Akimoto, K. et al. | 2008
- 2215
-
Epitaxial films for Ge–Sb–Te phase change memoryShayduk, R. / Braun, W. et al. | 2008
- 2220
-
Molecular beam epitaxy of Si/Ge nanoislands on stripe-patterned Si (001) substrates with different stripe orientationsMatei, D. / Sanduijav, B. / Chen, G. / Hesser, G. / Springholz, G. et al. | 2008
- 2224
-
Growth of ultra-thin fluoride heterostructures on Ge(111) for quantum devicesOshita, Takao / Takahashi, Keita / Tsutsui, Kazuo et al. | 2008
- 2227
-
RHEED intensity oscillation of C60 layer epitaxial growthNishinaga, Jiro / Kawaharazuka, Atsushi / Horikoshi, Yoshiji et al. | 2008
- 2232
-
Crystalline and electrical characteristics of C60-doped GaAs filmsNishinaga, Jiro / Takada, Tomonori / Hayashi, Takashi / Horikoshi, Yoshiji et al. | 2008
- 2236
-
Author Index of MBE-XV| 2009
- 2247
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Subject Index of MBE-XV| 2009