Coupling Effects Between On-Chip Inductors in the Millimeter-Wave Regime (English)
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- New search for: Tsuchiya, H
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In:
IEEE electron device letters
;
31
, 4
; 362-365
;
2010
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ISSN:
- Article (Journal) / Print
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Title:Coupling Effects Between On-Chip Inductors in the Millimeter-Wave Regime
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Contributors:
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Published in:IEEE electron device letters ; 31, 4 ; 362-365
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Publisher:
- New search for: IEEE
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Place of publication:New York, NY
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Publication date:2010
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ISSN:
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ZDBID:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
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Table of contents – Volume 31, Issue 4
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 259
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EDITORIAL - Changes to the Editorial BoardMoon, J S et al. | 2010
- 260
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LETTERS - Silicon and Column IV Semiconductor Devices - Top-Gated Epitaxial Graphene FETs on Si-Face SiC Wafers With a Peak Transconductance of 600 mS/mmMadriz, F R et al. | 2010
- 263
-
Frequency-Independent RC Circuit Model for One-Dimensional Carbon NanostructuresLee, S H et al. | 2010
- 266
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Investigation on the Retention Reliability of Scaled SiO2/AlxOy/SiO2 Inter-Poly Dielectrics for NAND Flash Cell ArraysTeo, Z Q et al. | 2010
- 269
-
"Non-Hydrogen-Transport" Characteristics of Dynamic Negative-Bias Temperature InstabilitySahhaf, S et al. | 2010
- 272
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Correlation Between the Vth Adjustment of nMOSFETs With HfSiO Gate Oxide and the Energy Profile of the Bulk Trap DensityKhater, M H et al. | 2010
- 275
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High-κ/Metal-Gate Fully Depleted SOI CMOS With Single-Silicide Schottky Source/Drain With Sub-30-nm Gate LengthPaul, A et al. | 2010
- 278
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Performance Prediction of Ultrascaled SiGe/Si Core/Shell Electron and Hole Nanowire MOSFETsLiao, C-C et al. | 2010
- 281
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Benefit of NMOS by Compressive SiN as Stress Memorization Technique and Its MechanismShimizu, K et al. | 2010
- 284
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Suppression of Electron Mobility Degradation in (100)-Oriented Double-Gate Ultrathin Body nMOSFETsJo, M et al. | 2010
- 287
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Effect of Fast Components in Threshold-Voltage Shift on Bias Temperature Instability in High-k MOSFETsBalakrishnan, A et al. | 2010
- 290
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Optimal Global Interconnects for Networks-on-Chip in Many-Core ArchitecturesSun, H et al. | 2010
- 293
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Compound Semiconductor Devices - 100-nm-Gate (Al,In)N/GaN HEMTs Grown on SiC With FTTirelli, S et al. | 2010
- 296
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107-GHz (Al,Ga)N/GaN HEMTs on Silicon With Improved Maximum Oscillation FrequenciesMairiaux, E et al. | 2010
- 299
-
Microwave Performance of InAlAsSb/In0.35Ga0.65Sb/InAlAsSb Double Heterojunction Bipolar TransistorsLu, B et al. | 2010
- 302
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Schottky-Drain Technology for AlGaN/GaN High-Electron Mobility TransistorsKnoch, J et al. | 2010
- 305
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Modeling of High-Performance p-Type III-V Heterojunction Tunnel FETsBaiano, A et al. | 2010
- 308
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Thin-Film Devices - Strained Single-Grain Silicon n- and p-Channel Thin-Film Transistors by Excimer LaserPark, K-B et al. | 2010
- 311
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High Electrical Performance of Wet-Processed Indium Zinc Oxide Thin-Film TransistorsMcFarlane, B R et al. | 2010
- 314
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AC/DC Rectification With Indium Gallium Oxide Thin-Film TransistorsSuresh, A et al. | 2010
- 317
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Fast All-Transparent Integrated Circuits Based on Indium Gallium Zinc Oxide Thin-Film TransistorsJamshidi-Roudbari, A et al. | 2010
- 320
-
High-Frequency Half-Bit Shift Register With Amorphous-Oxide TFTZhao, D et al. | 2010
- 323
-
Fast Flexible Plastic Substrate ZnO CircuitsMourey, D A et al. | 2010
- 326
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Self-Aligned-Gate ZnO TFT CircuitsYang, Y-H et al. | 2010
- 329
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Chemical and Electrical Properties of Low-Temperature Solution-Processed In-Ga-Zn-O Thin-Film TransistorsHuang, J-S et al. | 2010
- 332
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Optoelectronics, Display, Imaging - Efficient and Air-Stable Polymer Photovoltaic Devices With WO3-V2O5 Mixed Oxides as Anodic ModificationWong, S M et al. | 2010
- 335
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Design High-Efficiency Si Nanopillar-Array-Textured Thin-Film Solar CellWang, Y et al. | 2010
- 338
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Solid-State Power and High-Voltage Devices - Gate Enhanced Power UMOSFET With Ultralow On-ResistanceMantegazza, D et al. | 2010
- 341
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Materials, Processing, and Packaging - Incomplete Filament Crystallization During Set Operation in PCM CellsZuo, Q et al. | 2010
- 344
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ZrO2-Based Memory Cell With a Self-Rectifying Effect for Crossbar WORM Memory ApplicationYang, C-C et al. | 2010
- 347
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Enhanced Via Integration Process for Copper/Ultralow-k InterconnectsKnoll, L et al. | 2010
- 350
-
Ultrathin Ni Silicides With Low Contact Resistance on Strained and Unstrained SiliconIelmini, D et al. | 2010
- 353
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Size-Dependent Retention Time in NiO-Based Resistive-Switching MemoriesChen, L et al. | 2010
- 356
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Highly Uniform Bipolar Resistive Switching With Al2O3 Buffer Layer in Robust NbAlO-Based RRAMZhu, G et al. | 2010
- 359
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The Strong Dependence of Polarization Fatigue on Poling-Voltage Conditions in Ferroelectric Vinylidene Fluoride and Trifluoroethylene Copolymer FilmsKang, K et al. | 2010
- 362
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Coupling Effects Between On-Chip Inductors in the Millimeter-Wave RegimeTsuchiya, H et al. | 2010
- 365
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Solid-State Device Phenomena - Role of Carrier Transport in Source and Drain Electrodes of High-Mobility MOSFETsHa, H et al. | 2010
- 368
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Molecular and Organic Devices - Electrode-Material-Dependent Switching Characteristics of Organic Nonvolatile Memory Devices Based on Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) FilmJeon, J et al. | 2010
- 371
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Sensors and Actuators - Perfectly Complementary Relay Design for Digital Logic ApplicationsZhu, Y et al. | 2010
- 374
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Ultrasonic Energy Transmission and Conversion Using a 2-D MEMS Resonator| 2010
- 377
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IEEE ELECTRON DEVICES SOCIETY MEETINGS CALENDAR| 2010
- 379
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Information for AuthorsAgliardi, Enrico et al. | 2010