A Pair of Ultra-Wideband Planar Transitions for Phase Inversion Applications (English)
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In:
IEEE microwave and wireless components letters
;
20
, 9
; 492-495
;
2010
-
ISSN:
- Article (Journal) / Print
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Title:A Pair of Ultra-Wideband Planar Transitions for Phase Inversion Applications
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Contributors:
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Published in:IEEE microwave and wireless components letters ; 20, 9 ; 492-495
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Publisher:
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Place of publication:New York, NY
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Publication date:2010
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ISSN:
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ZDBID:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
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- Further information on Basic classification
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Keywords:
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Classification:
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Source:
Table of contents – Volume 20, Issue 9
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 477
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LETTERS Cell-Centered Finite-Volume Time-Domain Method for Conducting MediaBozza, G et al. | 2010
- 480
-
Passive Components and Circuits A Waveguide to Microstrip Inline Transition With Very Simple Modular AssemblyZhang, Y et al. | 2010
- 483
-
Noncontacting Multiwaveguide-Band Backshort for Millimeter Wave ApplicationsKiuru, T et al. | 2010
- 486
-
A Novel Time Domain Method to Extract Equivalent Circuit Model of Patterned Ground StructuresCheng, C-H et al. | 2010
- 489
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A Novel Compact and Polarization-Dependent Mushroom-Type EBG Using CSRR for Dual/Triple-Band ApplicationsPeng, L et al. | 2010
- 492
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A Pair of Ultra-Wideband Planar Transitions for Phase Inversion ApplicationsKim, Y-G et al. | 2010
- 495
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Wideband Microstrip 180° Hybrid Utilizing Ground SlotsBialkowski, M E et al. | 2010
- 498
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Broadband Phase Shifter Using Loaded Transmission LineZheng, S Y et al. | 2010
- 501
-
Design of UWB Bandpass Filter Using Stepped-Impedance Stub-Loaded ResonatorChu, Q-X et al. | 2010
- 504
-
Hybrid and Monolithic RF Integrated Circuits A Broadband Quasi-Optical Terahertz Detector Utilizing a Zero Bias Schottky DiodeLiu, L et al. | 2010
- 507
-
A High Efficiency Broadband Class-E Power Amplifier Using a Reactance Compensation TechniqueLin, C-H et al. | 2010
- 510
-
An Excellent Gain Flatness 3.0-7.0 GHz CMOS PA for UWB ApplicationsMurad, S A Z et al. | 2010
- 513
-
A 90 nm CMOS + 11 dBm IIP3 4 mW Dual-Band LNA for Cellular HandsetsZare Fatin, G H et al. | 2010
- 516
-
A Switchless Zigbee Frontend Transceiver With Matching Component Sharing of LNA and PAKim, Y-J et al. | 2010
- 519
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A Low-Voltage Low-Power K-Band CMOS LNA Using DC-Current-Path Split TechnologyWang, T-P et al. | 2010
- 522
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A High Gain, High Power K-Band Frequency Doubler in 0.18μm CMOS ProcessChen, J-H et al. | 2010
- 525
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Applications Measurement Techniques, System Modeling Techniques, and DC-Offset Compensation Concept for Monostatic FMCW Radar TransceiversJahn, M et al. | 2010
- 528
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Behavioral Modeling of Power Amplifiers With Dynamic Fuzzy Neural NetworksZhai, J et al. | 2010