SymFET: A Proposed Symmetric Graphene Tunneling Field-Effect Transistor (English)
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In:
IEEE transactions on electron devices
;
60
, 3
; 951-957
;
2013
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ISSN:
- Article (Journal) / Print
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Title:SymFET: A Proposed Symmetric Graphene Tunneling Field-Effect Transistor
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Contributors:
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Published in:IEEE transactions on electron devices ; 60, 3 ; 951-957
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Publisher:
- New search for: IEEE
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Place of publication:New York, NY
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Publication date:2013
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ZDBID:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
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Table of contents – Volume 60, Issue 3
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 899
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EDITORIAL - A Warm Welcome to a New T-ED EditorCressler, J D et al. | 2013
- 899
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A Warm Welcome to a New T-ED EditorCressler, John D. et al. | 2013
- 900
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New Subject Category on Emerging Technologies and DevicesCressler, John D. / Chatterjee, Amitava / Jindal, Renuka et al. | 2013
- 901
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A Comparative Study of Different Physics-Based NBTI ModelsMahapatra, S. / Goel, N. / Desai, S. / Gupta, S. / Jose, B. / Mukhopadhyay, S. / Joshi, K. / Jain, A. / Islam, A. E. / Alam, M. A. et al. | 2013
- 901
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Review Articles - A Comparative Study of Different Physics-Based NBTI Models (Invited Paper)Mahapatra, S et al. | 2013
- 917
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Silicon and Column IV Semiconductor Devices - Perturbation Theory for Solar Cell Efficiency II — Delineating Series ResistanceWong, J et al. | 2013
- 917
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Perturbation Theory for Solar Cell Efficiency II—Delineating Series ResistanceWong, Johnson et al. | 2013
- 923
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Limitations of the High–Low $C$ –$V$ Technique for MOS Interfaces With Large Time Constant DispersionPenumatcha, Ashish Verma / Swandono, Steven / Cooper, James A. et al. | 2013
- 923
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Limitations of the High-Low - Technique for MOS Interfaces With Large Time Constant DispersionPenumatcha, A.V. / Swandono, S. / Cooper, J.A. et al. | 2013
- 927
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High-Mobility Ge p- and n-MOSFETs With 0.7-nm EOT Using HfO2/A12O3/GeOx/Ge Gate Stacks Fabricated by Plasma PostoxidationZhang, R et al. | 2013
- 927
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High-Mobility Ge p- and n-MOSFETs With 0.7-nm EOT Using $\hbox{HfO}_{2}/\hbox{Al}_{2}\hbox{O}_{3}/\hbox{GeO}_{x}/\hbox{Ge}$ Gate Stacks Fabricated by Plasma PostoxidationZhang, Rui / Huang, Po-Chin / Lin, Ju-Chin / Taoka, Noriyuki / Takenaka, Mitsuru / Takagi, Shinichi et al. | 2013
- 927
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High-Mobility Ge p- and n-MOSFETs With 0.7-nm EOT Using Gate Stacks Fabricated by Plasma PostoxidationZhang, R. / Huang, P.-C. / Lin, J.-C. / Taoka, N. / Takenaka, M. / Takagi, S. et al. | 2013
- 935
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Impact of a Spacer–Drain Overlap on the Characteristics of a Silicon Tunnel Field-Effect Transistor Based on Vertical TunnelingMallik, Abhijit / Chattopadhyay, Avik / Guin, Shilpi / Karmakar, Anupam et al. | 2013
- 944
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Orientation and Shape Effects on Ballistic Transport Properties in Gate-All-Around Rectangular Germanium Nanowire nFETsMori, Seigo / Morioka, Naoya / Suda, Jun / Kimoto, Tsunenobu et al. | 2013
- 951
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SymFET: A Proposed Symmetric Graphene Tunneling Field-Effect TransistorZhao, Pei / Feenstra, Randall M. / Gu, Gong / Jena, Debdeep et al. | 2013
- 958
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Ballistic $I$– $V$ Characteristics of Short-Channel Graphene Field-Effect Transistors: Analysis and Optimization for Analog and RF ApplicationsGanapathi, Kartik / Yoon, Youngki / Lundstrom, Mark / Salahuddin, Sayeef et al. | 2013
- 958
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Ballistic - Characteristics of Short-Channel Graphene Field-Effect Transistors: Analysis and Optimization for Analog and RF ApplicationsGanapathi, K. / Yoon, Y. / Lundstrom, M. / Salahuddin, S. et al. | 2013
- 965
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Impact of Precisely Positioned Dopants on the Performance of an Ultimate Silicon Nanowire Transistor: A Full Three-Dimensional NEGF Simulation StudyGeorgiev, Vihar P. / Towie, Ewan A. / Asenov, Asen et al. | 2013
- 972
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Impact of High-Mobility Materials on the Performance of Near- and Sub-Threshold CMOS Logic CircuitsCrupi, Felice / Albano, Domenico / Alioto, Massimo / Franco, Jacopo / Selmi, Luca / Mitard, Jérôme / Groeseneken, Guido et al. | 2013
- 978
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Statistical Characterization and Modeling of the Temporal Evolutions of ΔVt Distribution in NBTI Recovery in Nanometer MOSFETsChiu, J-P et al. | 2013
- 978
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Statistical Characterization and Modeling of the Temporal Evolutions of $\Delta V_{\rm t}$ Distribution in NBTI Recovery in Nanometer MOSFETsChiu, Jung-Piao / Liu, Yu-Heng / Hsieh, Hung-Da / Li, Chi-Wei / Chen, Min-Cheng / Wang, Tahui et al. | 2013
- 978
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Statistical Characterization and Modeling of the Temporal Evolutions of Distribution in NBTI Recovery in Nanometer MOSFETsChiu, J.-P. / Liu, Y.-H. / Hsieh, H.-D. / Li, C.-W. / Chen, M.-C. / Wang, T. et al. | 2013
- 985
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Pseudosaturation and Negative Differential Conductance in Graphene Field-Effect TransistorsAlarcon, Alfonso / Nguyen, Viet-Hung / Berrada, Salim / Querlioz, Damien / Saint-Martin, Jérôme / Bournel, Arnaud / Dollfus, Philippe et al. | 2013
- 992
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Extraction and Analysis of Interface States in 50-nm nand Flash DevicesYan, Chin-Rung / Chen, Jone F. / Lee, Ya-Jui / Liao, Yu-Jie / Lin, Chung-Yi / Chen, Chih-Yuan / Lin, Yin-Chia / Chen, Huei-Haurng et al. | 2013
- 998
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Area-Dependent Photodetection Frequency Response Characterization of Silicon Avalanche Photodetectors Fabricated With Standard CMOS TechnologyLee, Myung-Jae / Choi, Woo-Young et al. | 2013
- 1005
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Strain and Conduction-Band Offset in Narrow n-type FinFETsvan Hemert, T. / Kaleli, B. / Hueting, R. J. E. / Esseni, D. / van Dal, M. J. H. / Schmitz, J. et al. | 2013
- 1011
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High Area-Efficient ESD Clamp Circuit With Equivalent $RC$-Based Detection Mechanism in a 65-nm CMOS ProcessYeh, Chih-Ting / Ker, Ming-Dou et al. | 2013
- 1011
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High Area-Efficient ESD Clamp Circuit With Equivalent -Based Detection Mechanism in a 65-nm CMOS ProcessYeh, C.-T. / Ker, M.-D. et al. | 2013
- 1019
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A Simulation Study on Process Sensitivity of a Line Tunnel Field-Effect TransistorWalke, Amey M. / Vandenberghe, William G. / Kao, Kuo-Hsing / Vandooren, Anne / Groeseneken, Guido et al. | 2013
- 1028
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A Preliminary Study on the Environmental Dependences of Avalanche Propagation in SiliconFishburn, Matthew W. / Charbon, Edoardo et al. | 2013
- 1034
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High-Performance Silicon Nanotube Tunneling FET for Ultralow-Power Logic ApplicationsFahad, Hossain M. / Hussain, Muhammad M. et al. | 2013
- 1040
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Raised-Source/Drain Double-Gate Transistor Design Optimization for Low Operating PowerChen, Deirdre / Jacobson, Zachery A. / Liu, Tsu-Jae King et al. | 2013
- 1046
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AlGaN Channel HEMT With Extremely High Breakdown VoltageNanjo, Takuma / Imai, Akifumi / Suzuki, Yosuke / Abe, Yuji / Oishi, Toshiyuki / Suita, Muneyoshi / Yagyu, Eiji / Tokuda, Yasunori et al. | 2013
- 1046
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Compound Semiconductor Devices - AlGaN Channel HEMT With Extremely High Breakdown VoltageNanjo, T et al. | 2013
- 1054
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Fabrication, Characterization, and Physical Analysis of AlGaN/GaN HEMTs on Flexible SubstratesDefrance, N. / Lecourt, F. / Douvry, Y. / Lesecq, M. / Hoel, V. / Lecavelier Des Etangs-Levallois, A. / Cordier, Yvon / Ebongue, A. / De Jaeger, J. C. et al. | 2013
- 1060
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Temperature Dependence of the Component Currents and Internal Quantum Efficiency in Blue Light-Emitting DiodesKang, Bomoon / Kim, Sang-Bae et al. | 2013
- 1060
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Temperature Dependence of the Component Currents and Internal Quantum Efficiency in Blu Light-Emitting DiodesKang, B. / Kim, S.-B. et al. | 2013
- 1068
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Submicrometer InP/InGaAs DHBT Architecture Enhancements Targeting Reliability ImprovementsKone, Gilles A. / Grandchamp, Brice / Hainaut, Cyril / Marc, François / Labat, Nathalie / Zimmer, Thomas / Nodjiadjim, Virginie / Riet, Muriel / Dupuy, Jean-Yves / Godin, Jean et al. | 2013
- 1075
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Schottky-Contact Technology in InAlN/GaN HEMTs for Breakdown Voltage ImprovementZhou, Qi / Chen, Wanjun / Liu, Shenghou / Zhang, Bo / Feng, Zhihong / Cai, Shujun / Chen, Kevin J. et al. | 2013
- 1082
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PECVD Silicon Nitride Passivation of AlGaN/GaN HeterostructuresGatabi, Iman Rezanezhad / Johnson, Derek W. / Woo, Jung Hwan / Anderson, Jonathan W. / Coan, Mary R. / Piner, Edwin L. / Harris, Harlan Rusty et al. | 2013
- 1088
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Microwave Determination of Quantum-Well Capture and Escape Time in Light-Emitting TransistorsWang, Hsiao-Lun / Chou, Peng-Hao / Wu, Chao-Hsin et al. | 2013
- 1092
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Design and Analysis of Robust Tunneling FET SRAMChen, Yin-Nien / Fan, Ming-Long / Hu, Vita Pi-Ho / Su, Pin / Chuang, Ching-Te et al. | 2013
- 1092
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Memory Devices and Technology - Design and Analysis of Robust Tunneling FET SRAMChen, Y-N et al. | 2013
- 1099
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Activation Energies of Failure Mechanisms in Advanced NAND Flash Cells for Different Generations and CyclingLee, K. / Kang, M. / Seo, S. / Kang, D. / Kim, S. / Li, D.H. / Shin, H. et al. | 2013
- 1099
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Activation Energies $(E_{a})$ of Failure Mechanisms in Advanced NAND Flash Cells for Different Generations and CyclingLee, Kyunghwan / Kang, Myounggon / Seo, Seongjun / Kang, Duckseoung / Kim, Shinhyung / Li, Dong Hua / Shin, Hyungcheol et al. | 2013
- 1108
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Fully CMOS-Compatible 1T1R Integration of Vertical Nanopillar GAA Transistor and Oxide-Based RRAM Cell for High-Density Nonvolatile Memory ApplicationFang, Z. / Wang, X. P. / Li, X. / Chen, Z. X. / Kamath, A. / Lo, G. Q. / Kwong, D. L. et al. | 2013
- 1114
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Endurance/Retention Trade-off on $\hbox{HfO}_{2}/\hbox{Metal}$ Cap 1T1R Bipolar RRAMChen, Yang Yin / Goux, Ludovic / Clima, Sergiu / Govoreanu, Bogdan / Degraeve, Robin / Kar, Gouri Sankar / Fantini, Andrea / Groeseneken, Guido / Wouters, Dirk J. / Jurczak, Malgorzata et al. | 2013
- 1114
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Endurance/Retention Trade-off on HfO2/Metal Cap 1T1R Bipolar RRAMChen, Y Y et al. | 2013
- 1114
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Endurance/Retention Trade-off on Cap 1T1R Bipolar RRAMChen, Y.Y. / Goux, L. / Clima, S. / Govoreanu, B. / Degraeve, R. / Kar, G.S. / Fantini, A. / Groeseneken, G. / Wouters, D.J. / Jurczak, M. et al. | 2013
- 1122
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Thin Film Transistors - Analytical Drain Current Model for Poly-Si Thin-Film Transistors Biased in Strong Inversion Considering Degradation of Tail States at Grain BoundaryWang, L L et al. | 2013
- 1122
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Analytical Drain Current Model for Poly-Si Thin-Film Transistors Biased in Strong Inversion Considering Degradation of Tail States at Grain BoundaryWang, Lisa L. / Kuo, James B. / Zhang, Shengdong et al. | 2013
- 1128
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The Electrical Properties of Asymmetric Schottky Contact Thin-Film Transistors with Amorphous-In2Ga2ZnO7Rha, S H et al. | 2013
- 1128
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The Electrical Properties of Asymmetric Schottky Contact Thin-Film Transistors with Amorphous-Rha, S.H. / Kim, U.K. / Jung, J. / Kim, H.K. / Jung, Y.S. / Hwang, E.S. / Chung, Y.J. / Lee, M. / Choi, J.-H. / Hwang, C.S. et al. | 2013
- 1128
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The Electrical Properties of Asymmetric Schottky Contact Thin-Film Transistors with Amorphous-$\hbox{In}_{2}\hbox{Ga}_{2}\hbox{ZnO}_{7}$Rha, Sang Ho / Kim, Un Ki / Jung, Jisim / Kim, Hyo Kyeom / Jung, Yoon Soo / Hwang, Eun Suk / Chung, Yoon Jang / Lee, Mijung / Choi, Jung-Hae / Hwang, Cheol Seong et al. | 2013
- 1136
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A Compact Model for Organic Field-Effect Transistors With Improved Output Asymptotic BehaviorsChang Hyun Kim, / Castro-Carranza, Alejandra / Estrada, Magali / Cerdeira, Antonio / Bonnassieux, Yvan / Horowitz, Gilles / Iniguez, Benjamin et al. | 2013
- 1142
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Characteristics of Planar Junctionless Poly-Si Thin-Film Transistors With Various Channel ThicknessLin, Horng-Chih / Lin, Cheng-I / Lin, Zer-Ming / Shie, Bo-Shiuan / Huang, Tiao-Yuan et al. | 2013
- 1149
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Investigation of Polysilazane-Based SiO2 Gate Insulator for Oxide Semiconductor Thin-Film TransistorsTu, H T C et al. | 2013
- 1149
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Investigation of Polysilazane-Based Gate Insulator for Oxide Semiconductor Thin-Film TransistorsTu, H.T.C. / Inoue, S. / Tue, P.T. / Miyasako, T. / Shimoda, T. et al. | 2013
- 1149
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Investigation of Polysilazane-Based $\hbox{SiO}_{2}$ Gate Insulator for Oxide Semiconductor Thin-Film TransistorsTu, Huynh Thi Cam / Inoue, Satoshi / Tue, Phan Trong / Miyasako, Takaaki / Shimoda, Tatsuya et al. | 2013
- 1154
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Optoelectronics, Displays, and Imaging - Feedforward Effect in Standard CMOS Pinned PhotodiodesSarkar, M et al. | 2013
- 1154
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Feedforward Effect in Standard CMOS Pinned PhotodiodesSarkar, Mukul / Buttgen, Bernhard / Theuwissen, Albert J. P. et al. | 2013
- 1162
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A 0.8-V 4096-Pixel CMOS Sense-and-Stimulus Imager for Retinal ProsthesisLee, Chih-Lin / Hsieh, Chih-Cheng et al. | 2013
- 1169
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CMOS X-Ray Detector With Column-Parallel 14.3-bit Extended-Counting ADCsShin, Min-Seok / Kim, Jong-Boo / Jo, Yun-Rae / Kim, Min-Kyu / Kwak, Bong-Choon / Seol, Hyeon-Cheon / Kwon, Oh-Kyong et al. | 2013
- 1178
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GaN-Based Planar p-i-n Photodetectors With the Be-Implanted Isolation RingHou, Jei-Li / Chang, Shoou-Jinn / Chen, Meng-Chu / Liu, C. H. / Hsueh, Ting-Jen / Sheu, Jinn-Kong / Li, Shuguang et al. | 2013
- 1183
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High-Bandwidth and High-Responsivity Top-Illuminated Germanium Photodiodes for Optical InterconnectionLi, Chong / Xue, Chunlai / Liu, Zhi / Cheng, Buwen / Li, Chuanbo / Wang, Qiming et al. | 2013
- 1188
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Transient Single-Photon Avalanche Diode Operation, Minority Carrier Effects, and Bipolar Latch UpWebster, Eric A. G. / Grant, Lindsay A. / Henderson, Robert K. et al. | 2013
- 1195
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Optimization of Specific on-Resistance of Semisuperjunction Trench MOSFETs with Charge BalanceHuang, Haimeng / Chen, Xingbi et al. | 2013
- 1195
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Solid-State Power and High Voltage Devices - Optimization of Specific ON-Resistance of Semisuperjunction Trench MOSFETs with Charge BalanceHuang, H et al. | 2013
- 1202
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Analytical and Finite-Element Modeling of a Two-Contact Circular Test Structure for Specific Contact ResistivityPan, Y. / Reeves, G. K. / Leech, P. W. / Holland, A. S. et al. | 2013
- 1202
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Solid State Device Phenomena - Analytical and Finite-Element Modeling of a Two-Contact Circular Test Structure for Specific Contact ResistivityPan, Y et al. | 2013
- 1208
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Molecular and Organic Devices - Improved Performance of Photosensitive Field-Effect Transistors Based on Palladium Phthalocyanine by Utilizing Al as Source and Drain ElectrodesPeng, Y et al. | 2013
- 1208
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Improved Performance of Photosensitive Field-Effect Transistors Based on Palladium Phthalocyanine by Utilizing Al as Source and Drain ElectrodesPeng, Yingquan / Lv, Wenli / Yao, Bo / Xie, Jipeng / Yang, Ting / Fan, Guoying / Chen, Deqiang / Gao, Pengjie / Zhou, Maoqing / Wang, Ying et al. | 2013
- 1213
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Turnover Temperature Point in Extensional-Mode Highly Doped Silicon MicroresonatorsShahmohammadi, Mohsen / Harrington, Brandon P. / Abdolvand, Reza et al. | 2013
- 1213
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Sensors and Actuators - Turnover Temperature Point in Extensional-Mode Highly Doped Silicon MicroresonatorsShahmohammadi, M et al. | 2013
- 1221
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Impact of Random Fabrication Errors on Fundamental Forward-Wave Small-Signal Gain and Bandwidth in Traveling-Wave Tubes With Finite-Space-Charge Electron BeamsSengele, Sean / Barsanti, Marc L. / Hargreaves, Thomas A. / Armstrong, Carter M. / Booske, John H. / Lau, Y. Y. et al. | 2013
- 1221
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Vacuum Electron Devices - Impact of Random Fabrication Errors on Fundamental Forward-Wave Small-Signal Gain and Bandwidth in Traveling-Wave Tubes With Finite-Space-Charge Electron BeamsSengele, S et al. | 2013
- 1228
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A Novel Ridge-Vane-Loaded Folded-Waveguide Slow-Wave Structure for 0.22-THz Traveling-Wave TubeHou, Yan / Gong, Yubin / Xu, Jin / Wang, Shaomeng / Wei, Yanyu / Yue, Lingna / Feng, Jinjun et al. | 2013
- 1236
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Design and Realization Aspects of 1-THz Cascade Backward Wave Amplifier Based on Double Corrugated WaveguidePaoloni, Claudio / Di Carlo, Aldo / Bouamrane, Fayçal / Bouvet, Thomas / Durand, Alain J. / Kotiranta, Mikko / Krozer, Viktor / Megtert, Stephan / Mineo, Mauro / Zhurbenko, Vitaliy et al. | 2013
- 1244
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Analysis of Coupled Planar Helices with Straight-Edge Connections for Application in Millimeter-Wave TWTsZhao, Chen / Aditya, Sheel / Chua, Ciersiang et al. | 2013
- 1251
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A 3-D U-Shaped Meander-Line Slow-Wave Structure for Traveling-Wave-Tube ApplicationsChua, Ciersiang / Aditya, Sheel et al. | 2013
- 1257
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Briefs - Broadband 220-GHz Vacuum Window for a Traveling-Wave Tube AmplifierCook, A M et al. | 2013
- 1257
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Broadband 220-GHz Vacuum Window for a Traveling-Wave Tube AmplifierCook, Alan M. / Joye, Colin D. / Kimura, Takuji / Wright, Edward L. / Calame, Jeffrey P. et al. | 2013
- 1260
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Effects of Nitridation on 4H-SiC MOSFETs Fabricated on Various Crystal FacesNanen, Yuichiro / Kato, Muneharu / Suda, Jun / Kimoto, Tsunenobu et al. | 2013
- 1263
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Gate Voltage Matching Investigation for Low-Power Analog ApplicationsJoly, Yohan / Lopez, Laurent / Truphemus, Laurent / Portal, Jean-Michel / Aziza, Hassen / Julien, Franck / Fornara, Pascal / Masson, Pascal / Ogier, Jean-Luc / Bert, Yannick et al. | 2013
- 1268
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Capture Cross Section of Traps Causing Random Telegraph Noise in Gate-Induced Drain Leakage CurrentYoo, Sung-Won / Son, Younghwan / Shin, Hyungcheol et al. | 2013
- 1272
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Current Conduction Model for Oxide-Based Resistive Random Access Memory Verified by Low-Frequency Noise AnalysisFang, Z. / Yu, H. Y. / Fan, W. J. / Ghibaudo, G. / Buckley, J. / DeSalvo, B. / Li, X. / Wang, X. P. / Lo, G. Q. / Kwong, D. L. et al. | 2013
- 1276
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Meeting the Challenge of Multiple Threshold Voltages in Highly Scaled Undoped FinFETsMuralidhar, Ramachandran / Cai, Jin / Frank, David J. / Oldiges, Phil / Lu, Darsen / Lauer, Isaac et al. | 2013
- 1279
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on-Resistance Degradation Induced by Hot-Carrier Injection in SOI SJ-LDMOSXia, Chao / Cheng, Xinhong / Wang, Zhongjian / Cao, Duo / Jia, Tingting / Yu, Yuehui / Shen, Dashen et al. | 2013
- 1282
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A Thermal Isolation Technique Using Through-Silicon Vias for Three-Dimensional ICsHu, Sanming / Hoe, Yen Yi Germaine / Li, Hongyu / Zhao, Dan / Shi, Jinglin / Han, Yong / Teo, Keng Hwa / Xiong, Yong Zhong / He, Jin / Zhang, Xiaowu et al. | 2013
- 1288
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Identifying the Diffusion and Drift Conduction Regions in MOSFETs Through -ParametersTorres-Rios, E. / Torres-Torres, R. / Gutierrez-D, E.A. et al. | 2013
- 1288
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Identifying the Diffusion and Drift Conduction Regions in MOSFETs Through $S$-ParametersTorres-Rios, Emmanuel / Torres-Torres, Reydezel / Gutierrez-D., Edmundo A. et al. | 2013
- 1292
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Special Issue on GaN Electronic Devices| 2013
- 1294
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2013 International Electron Devices Meeting| 2013
- 1295
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2013 IEEE International Reliability Physics Symposium - Call for Papers and Posters| 2013
- 1296
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2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)| 2013
- C1
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Table of Contents| 2013
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IEEE Transactions on Electron Devices publication information| 2013
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IEEE Transactions on Electron Devices information for authors| 2013
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ANNOUNCEMENTS - Call for Papers-Special Issue on GaN Electronic Devices| 2013