×10 Fast write, 80% energy saving temperature controlling set method for multi-level cell phase change memories to solve the scaling blockade (English)
- New search for: Johguchi, Koh
- New search for: Johguchi, Koh
- New search for: Shintani, Toshimichi
- New search for: Morikawa, Takahiro
- New search for: Yoshioka, Kazuaki
- New search for: Takeuchi, Ken
In:
Solid state electronics
;
81
; 78-85
;
2013
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ISSN:
- Article (Journal) / Print
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Title:×10 Fast write, 80% energy saving temperature controlling set method for multi-level cell phase change memories to solve the scaling blockade
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Contributors:Johguchi, Koh ( author ) / Shintani, Toshimichi / Morikawa, Takahiro / Yoshioka, Kazuaki / Takeuchi, Ken
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Published in:Solid state electronics ; 81 ; 78-85
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Publisher:
- New search for: Elsevier
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Place of publication:Amsterdam [u.a.]
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Publication date:2013
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ISSN:
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ZDBID:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
- New search for: 770/3480/5670
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Keywords:
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Classification:
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Source:
Table of contents – Volume 81
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
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Effects of post-oxidation on leakage current of high-voltage AlGaN/GaN Schottky barrier diodes on Si(111) substratesHa, Min-Woo / Han, Min-Koo / Hahn, Cheol-Koo et al. | 2012
- 5
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Design of emitter ledge for thermal stability of AlGaAs/GaAs heterojunction bipolar transistorsLim, H.W. / Baek, C.H. / Kang, B.K. et al. | 2012
- 8
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The effect of different dicing methods on the leakage currents of n-type silicon diodes and strip sensorsChristophersen, M. / Fadeyev, V. / Ely, S. / Phlips, B.F. / Sadrozinski, H.F.-W. et al. | 2012
- 13
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Analysis of temperature effect on a-Si:H thin film transistorsQiang, L. / Yao, R.H. et al. | 2012
- 19
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Room temperature analysis of Ge p+/n diodes reverse characteristics fabricated by platinum assisted dopant activationIoannou-Sougleridis, Vassilios / Poulakis, Nikolaos / Dimitrakis, Panagiotis / Normand, Pascal / Patsis, George P. / Dimoulas, Athanasios / Simoen, Eddy et al. | 2012
- 27
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Off-state avalanche-breakdown-induced on-resistance degradation in SGO–NLDMOSZhang, Shifeng / Han, Yan / Ding, Koubao / Hu, Jiaxian / Zhang, Bin / Zhang, Wei / Wu, Huanting et al. | 2012
- 32
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Effects of geometry parameters of NTFET devices on the I–V measurementsJustino, Celine I.L. / Rocha-Santos, Teresa A.P. / Amaral, José P. / Cardoso, Susana / Duarte, Armando C. et al. | 2012
- 35
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Numerical simulation and characterization of trapping noise in InGaP–GaAs heterojunctions devices at high injectionNallatamby, Jean-Christophe / Abdelhadi, Khaled / Jacquet, Jean-Claude / Prigent, Michel / Floriot, Didier / Delage, Sylvain / Obregon, Juan et al. | 2012
- 45
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Solution based-spin cast processed organic bistable memory deviceRamana, CH.V.V. / Moodley, M.K. / Kannan, V. / Maity, A. et al. | 2012
- 51
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Study of charge trapping characteristics of SONOS with various trapping layers using gate-sensing and channel-sensing (GSCS) methodLiao, Jeng-Hwa / Lin, Hsing-Ju / Lue, Hang-Ting / Du, Pei-Ying / Hsieh, Jung-Yu / Yang, Ling-Wu / Yang, Tahone / Chen, Kuang-Chao / Lu, Chih-Yuan et al. | 2012
- 58
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Effects of channel width variation on electrical characteristics of tri-gate Junctionless transistorsJeon, Dae-Young / Park, So Jeong / Mouis, Mireille / Barraud, Sylvain / Kim, Gyu-Tae / Ghibaudo, Gérard et al. | 2013
- 63
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Effect of two yellow delta-emitting layers on device performance of phosphorescent white organic light-emitting devicesZhao, Juan / Yu, Junsheng / Wang, Xiao / Zhang, Lei et al. | 2013
- 68
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High efficiency and high power continuous-wave semiconductor terahertz lasers at ∼3.1THzLiu, Junqi / Chen, Jianyan / Wang, Tao / Li, Yanfang / Liu, Fengqi / Li, Lu / Wang, Lijun / Wang, Zhanguo et al. | 2013
- 72
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Electrical properties of n-Zn0.94Cd0.06O/p-SiC heterostructuresShtepliuk, I. / Khranovskyy, V. / Lashkarev, G. / Khomyak, V. / Lazorenko, V. / Ievtushenko, A. / Syväjärvi, M. / Jokubavicius, V. / Yakimova, R. et al. | 2013
- 78
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×10 Fast write, 80% energy saving temperature controlling set method for multi-level cell phase change memories to solve the scaling blockadeJohguchi, Koh / Shintani, Toshimichi / Morikawa, Takahiro / Yoshioka, Kazuaki / Takeuchi, Ken et al. | 2012
- 78
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x10 Fast write, 80% energy saving temperature controlling set method for multi-level cell phase change memories to solve the scaling blockadeJohguchi, K. / Shintani, T. / Morikawa, T. / Yoshioka, K. / Takeuchi, K. et al. | 2013
- 86
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Transfer-free grown bilayer graphene transistors for digital applicationsWessely, Pia Juliane / Wessely, Frank / Birinci, Emrah / Riedinger, Bernadette / Schwalke, Udo et al. | 2012
- 91
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Improved empirical non-linear compact model for studying intermodulation in HEMTs and LDMOSFETsSadi, Toufik / Schwierz, Frank et al. | 2012
- 101
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Low-frequency noise behavior of junctionless transistors compared to inversion-mode transistorsJeon, Dae-Young / Park, So Jeong / Mouis, Mireille / Barraud, Sylvain / Kim, Gyu-Tae / Ghibaudo, Gérard et al. | 2012
- 105
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Analytical modeling of surface accumulation behavior of fully depleted SOI four gate transistors (G4-FETs)Sayed, Shehrin / Khan, M. Ziaur Rahman et al. | 2012
- 113
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A new method for the extraction of flat-band voltage and doping concentration in Tri-gate Junctionless TransistorsJeon, D.-Y. / Park, S.J. / Mouis, M. / Barraud, S. / Kim, G.-T. / Ghibaudo, G. et al. | 2012
- 119
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Effect of surface preparation on the radiation hardness of high-dielectric constant gate dielectricTsui, Bing-Yue / Su, Ting-Ting / Shew, Bor-Yuan / Huang, Yang-Tung et al. | 2012
- 124
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Temperature dependent compact modeling of gate tunneling leakage current in double gate MOSFETsDarbandy, Ghader / Aghassi, Jasmin / Sedlmeir, Josef / Monga, Udit / Garduño, Ivan / Cerdeira, Antonio / Iñiguez, Benjamin et al. | 2012
- 130
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Measurement of effective carrier lifetime at the semiconductor–dielectric interface by Photoconductive Decay (PCD) MethodDrummond, P.J. / Bhatia, D. / Ruzyllo, J. et al. | 2012
- 135
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Comparison between TCAD simulated and measured carrier lifetimes in CMOS photodiodes using the Open Circuit Voltage Decay methodMarcelot, O. / Magnan, P. et al. | 2012
- 140
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Effects of the solvent polarity of a polymeric insulator on field-effect mobility in an organic thin-film transistorKim, Hyeok / Bae, Jin-Hyuk / Horowitz, Gilles / Kim, Woo Young / Choi, Yoonseuk et al. | 2012
- 144
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MOSFET gate dimension dependent drain and source leakage modeling by standard SPICE modelsPaňko, Václav / Banáš, Stanislav / Prejda, Dušan / Dobeš, Josef et al. | 2013
- 151
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Characterization and modeling of low frequency noise in CMOS invertersIoannidis, E.G. / Haendler, S. / Dimitriadis, C.A. / Ghibaudo, G. et al. | 2012
- 157
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A high speed asymmetric T-shape cell in NMOS-selected phase change memory chipWang, J.H. / Zhou, J. / Zhou, W.L. / Tong, H. / Huang, D.Q. / Sun, J.J. / Zhang, L. / Long, X.M. / Chen, Y. / Qu, L.W. et al. | 2012
- 163
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An improved model for InP/InGaAs double heterojunction bipolar transistorsShi, Yuxia / Jin, Zhi / Su, Yongbo / Cao, Yuxiong / Wang, Yan et al. | 2012
- IFC
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Editorial Board| 2013