Under-the-Barrier-Model: An Extension of the Top-of-the-Barrier Model to Efficiently and Accurately Simulate Ultra-Scaled Nanowire Transistors (English)
- New search for: Szabò, Á
- New search for: Szabò, Á
- New search for: Luisier, M
In:
IEEE transactions on electron devices
;
60
, 7
; 2353-2360
;
2013
-
ISSN:
- Article (Journal) / Print
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Title:Under-the-Barrier-Model: An Extension of the Top-of-the-Barrier Model to Efficiently and Accurately Simulate Ultra-Scaled Nanowire Transistors
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Contributors:Szabò, Á ( author ) / Luisier, M
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Published in:IEEE transactions on electron devices ; 60, 7 ; 2353-2360
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Publisher:
- New search for: IEEE
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Place of publication:New York, NY
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Publication date:2013
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
- New search for: 53.50 / 53.00 / 52.50 / 54.20
- Further information on Basic classification
- New search for: 770/5670
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Source:
Table of contents – Volume 60, Issue 7
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 2104
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Simulation of High-Efficiency Crystalline Silicon Solar Cells With Homo–Hetero JunctionsZhong, Sihua / Hua, Xia / Shen, Wenzhong et al. | 2013
- 2095
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EDITORIAL - What's in a Page Charge?Saha, S K et al. | 2013
- 2095
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What's in a Page Charge?Saha, S.K. et al. | 2013
- 2095
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What is in a Page Charge?Saha, Samar K. et al. | 2013
- 2096
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A Physical and SPICE Mobility Degradation Analysis for NBTIChaudhary, Ankush / Mahapatra, Souvik et al. | 2013
- 2096
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Silicon and Column IV Semiconductors Devices - A Physical and SPICE Mobility Degradation Analysis for NBTIChaudhary, A et al. | 2013
- 2111
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Model Order Reduction for Multiband Quantum Transport Simulations and its Application to p-Type Junctionless TransistorsHuang, Jun Z. / Chew, Weng Cho / Peng, Jie / Yam, Chi-Yung / Jiang, Li Jun / Chen, Guan-Hua et al. | 2013
- 2120
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Modeling and Design Space of Junctionless Symmetric DG MOSFETs With Long ChannelJazaeri, Farzan / Barbut, Lucian / Sallese, Jean-Michel et al. | 2013
- 2128
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Quantum Mechanical Performance Predictions of p-n-i-n Versus Pocketed Line Tunnel Field-Effect TransistorsVerreck, Devin / Verhulst, Anne S. / Kao, Kuo-Hsing / Vandenberghe, William G. / De Meyer, Kristin / Groeseneken, Guido et al. | 2013
- 2135
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Germanium Multiple-Gate Field-Effect Transistor With In Situ Boron-Doped Raised Source/DrainLiu, Bin / Zhan, Chunlei / Yang, Yue / Cheng, Ran / Guo, Pengfei / Zhou, Qian / Kong, Eugene Yu-Jin / Daval, Nicolas / Veytizou, Christelle / Delprat, Daniel et al. | 2013
- 2142
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Atomistic Study of the Lattice Thermal Conductivity of Rough Graphene NanoribbonsKaramitaheri, Hossein / Pourfath, Mahdi / Faez, Rahim / Kosina, Hans et al. | 2013
- 2148
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On the Distribution of NBTI Time Constants on a Long, Temperature-Accelerated Time ScalePobegen, Gregor / Grasser, Tibor et al. | 2013
- 2156
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Parameterization of Free Carrier Absorption in Highly Doped Silicon for Solar CellsRudiger, Marc / Greulich, Johannes / Richter, Armin / Hermle, Martin et al. | 2013
- 2164
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Compact Zero-Temperature Coefficient Modeling Approach for MOSFETs Based on Unified Regional Modeling of Surface PotentialChiah, Siau Ben / Zhou, Xing / Yuan, Li et al. | 2013
- 2171
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Engineering Nanowire n-MOSFETs at Lg < 8 nmMehrotra, S et al. | 2013
- 2171
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Engineering Nanowire n-MOSFETs at $L_{g}<8~{\rm nm}$Mehrotra, Saumitra R. / Kim, SungGeun / Kubis, Tillmann / Povolotskyi, Michael / Lundstrom, Mark S. / Klimeck, Gerhard et al. | 2013
- 2178
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- 2186
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Evaluation of Digital Circuit-Level Variability in Inversion-Mode and Junctionless FinFET TechnologiesWang, Shaodi / Leung, Greg / Pan, Andrew / Chui, Chi On / Gupta, Puneet et al. | 2013
- 2194
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State Dynamics and Modeling of Tantalum Oxide MemristorsStrachan, John Paul / Torrezan, Antonio C. / Miao, Feng / Pickett, Matthew D. / Yang, J. Joshua / Yi, Wei / Medeiros-Ribeiro, Gilberto / Williams, R. Stanley et al. | 2013
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A New Erase Constraint for the Junction-Less Charge-Trap Memory Array in Cylindrical GeometryMaconi, A et al. | 2013
- 2203
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New Erase Constraint for the Junction-Less Charge-Trap Memory Array in Cylindrical GeometryMaconi, Alessandro / Compagnoni, Christian Monzio / Spinelli, Alessandro S. / Lacaita, Andrea L. et al. | 2013
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InP-DHBT-on-BiCMOS Technology With $f_{T}/f_{\max}$ of 400/350 GHz for Heterogeneous Integrated Millimeter-Wave SourcesKraemer, Tomas / Ostermay, Ina / Jensen, Thomas / Johansen, Tom Keinicke / Schmueckle, Franz-Josef / Thies, Andreas / Krozer, Viktor / Heinrich, Wolfgang / Krueger, Olaf / Traenkle, Guenther et al. | 2013
- 2209
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InP-DHBT-on-BiCMOS Technology With fTlf max of 400/350 GHz for Heterogeneous Integrated Millimeter-Wave SourcesKraemer, T et al. | 2013
- 2217
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Silicon Substrate Engineered High-Voltage High-Temperature GaN-DHFETsSrivastava, Puneet / Das, Jo / Mertens, Robert P. / Borghs, Gustaaf et al. | 2013
- 2217
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Compound Semiconductor Devices - Silicon Substrate Engineered High Voltage High Temperature GaN-DHFETsSrivastava, P et al. | 2013
- 2224
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Electrothermal Simulation and Thermal Performance Study of GaN Vertical and Lateral Power TransistorsZhang, Yuhao / Sun, Min / Liu, Zhihong / Piedra, Daniel / Lee, Hyung-Seok / Gao, Feng / Fujishima, Tatsuya / Palacios, Tomas et al. | 2013
- 2231
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Investigations of AlGaN/AlN/GaN MOS-HEMTs on Si Substrate by Ozone Water Oxidation MethodLiu, Han-Yin / Lee, Ching-Sung / Hsu, Wei-Chou / Tseng, Lung-Yi / Chou, Bo-Yi / Ho, Chiu-Sheng / Wu, Chang-Luen et al. | 2013
- 2238
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Electrical Characterization of GaP-Silicon Interface for Memory and Transistor ApplicationsPal, Ashish / Nainani, Aneesh / Ye, Zhiyuan / Bao, Xinyu / Sanchez, Errol / Saraswat, Krishna C. et al. | 2013
- 2246
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A Non-Parabolic, Multi-Valley Quantum Correction Model for InGaAs Double-Gate StructuresPenzin, O et al. | 2013
- 2246
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Nonparabolic Multivalley Quantum Correction Model for InGaAs Double-Gate StructuresPenzin, Oleg / Paasch, Gernot / Smith, Lee et al. | 2013
- 2251
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High- kappa Eu~2O~3 and Y~2O~3 Poly-Si Thin-Film Transistor Nonvolatile Memory DevicesPan, T.-M. / Yen, L.-C. / Huang, S.-H. / Lo, C.-T. / Chao, T.-S. et al. | 2013
- 2251
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Memory Devices and Technology - High-K EU2O3 and Y2O3 Poly-Si Thin-Film Transistor Nonvolatile Memory DevicesPan, T-M et al. | 2013
- 2251
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High-$\kappa~{\rm Eu}_{2}{\rm O}_{3}$ and ${\rm Y}_{2}{\rm O}_{3}$ Poly-Si Thin-Film Transistor Nonvolatile Memory DevicesPan, Tung-Ming / Yen, Li-Chen / Huang, Sheng-Hao / Lo, Chieh-Ting / Chao, Tien-Sheng et al. | 2013
- 2256
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Doping Process for 3-D N-Type Trench Transistors-2-D Cross-Sectional Doping Profiling StudyQin, Shu / Wang, Zhouguang / Hu, Yongjun Jeff / McTeer, Allen et al. | 2013
- 2261
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Read and Pass Disturbance in the Programmed States of Floating Gate Flash Memory Cells With High-$\kappa$ Interpoly Gate Dielectric StacksTang, Baojun / Robinson, Colin / Zhang, Wei Dong / Zhang, Jian Fu / Degraeve, Robin / Blomme, Pieter / Toledano-Luque, Maria / Van den bosch, Geert / Govoreanu, Bogdan / Van Houdt, Jan et al. | 2013
- 2261
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Read and Pass Disturbance in the Programmed States of Floating Gate Flash Memory Cells With High-K Inter-Poly Gate Dielectric StacksTang, B et al. | 2013
- 2268
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A Detailed Analysis of the Role of Thin-HfO2 Interfacial Layer in Ge2Sb2Te5-Based PCMHubert, Q et al. | 2013
- 2268
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Detailed Analysis of the Role of Thin-${\rm HfO}_{2}$ Interfacial Layer in ${\rm Ge}_{2}{\rm Sb}_{2}{\rm Te}_{5}$-Based PCMHubert, Quentin / Jahan, Carine / Toffoli, Alain / Delaye, Vincent / Lafond, Dominique / Grampeix, Helen / de Salvo, Barbara et al. | 2013
- 2276
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High-Performance SLS Nanowire TFTs With Dual-Gate StructureKang, Tsung-Kuei et al. | 2013
- 2276
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Thin Film Transistors - High-Performance SLS Nanowire TFTs With Dual-Gate StructureKang, T-K et al. | 2013
- 2282
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Effects of the Use of an Aluminum Reflecting and an SiO~2 Insulating Layers (RIL) on the Performance of a GaN-Based Light-Emitting Diode With the Naturally Textured p-GaN SurfaceLiou, J.-K. / Chen, C.-C. / Chou, P.-C. / Cheng, S.-Y. / Tsai, J.-H. / Liu, R.-C. / Liu, W.-C. et al. | 2013
- 2282
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Effects of the Use of an Aluminum Reflecting and an ${\rm SiO}_{2}$ Insulating Layers (RIL) on the Performance of a GaN-Based Light-Emitting Diode With the Naturally Textured p-GaN SurfaceLiou, Jian-Kai / Chen, Chun-Chia / Chou, Po-Cheng / Cheng, Shiou-Ying / Tsai, Jung-Hui / Liu, Rong-Chau / Liu, Wen-Chau et al. | 2013
- 2282
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Optoelectronics, Displays, and Imaging - Effects of the Use of an Aluminum Reflecting and an SiO2 Insulating Layers (RIL) on the Performance of a GaN-Based Light-Emitting Diode With the Naturally Textured p-GaN SurfaceLiou, J-K et al. | 2013
- 2290
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Performance Testing of 3-W LED Mounted on ZnO Thin Film Coated Al as Heat Sink Using Dual Interface MethodMutharasu, Devarajan / Shanmugan, Subramani / Anithambigai, Permal / Yin, Ong Zeng et al. | 2013
- 2296
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Dual-Carrier High-Gain Low-Noise Superlattice Avalanche PhotodiodesHuang, Jun / Banerjee, Koushik / Ghosh, Siddhartha / Hayat, Majeed M. et al. | 2013
- 2302
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High-Performance Split-Gate Enhanced UMOSFET With p-Pillar StructureWang, Ying / Hu, Hai-fan / Yu, Cheng-hao / Lan, Hao et al. | 2013
- 2302
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Solid-State Power and High Voltage Devices - High-Performance Split-Gate Enhanced UMOSFET With p-Pillar StructureWang, Y et al. | 2013
- 2308
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Cathode-Side Current Filaments in High-Voltage Power Diodes Beyond the SOA LimitBaburske, Roman / Niedernostheide, Franz-Josef / Lutz, Josef / Schulze, Hans-Joachim / Falck, Elmar / Bauer, Josef Georg et al. | 2013
- 2318
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A Novel Isolation Method for Half-Bridge Power ICsKong, Moufu / Chen, Xingbi et al. | 2013
- 2324
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Effect of ZnO Buffer Layer on the Bending Durability of ZnO:Ga Films Grown on Flexible Substrates: Investigation of Surface Energy, Electrical, Optical, and Structural PropertiesWu, Jia-Ling / Chen, Yu-Cheng / Lin, Han-Yu / Chu, Sheng-Yuan / Chang, Chia-Chiang / Wu, Chin-Jyi / Juang, Yung-Der et al. | 2013
- 2324
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Materials, Processing and Packaging - Effect of ZnO Buffer Layer on the Bending Durability of ZnO:Ga Films Grown on Flexible Substrates: Investigation of Surface Energy, Electrical, Optical, and Structural PropertiesWu, J-L et al. | 2013
- 2331
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An Investigation on Cu TSV-Induced KOZ in Silicon Chips: Simulations and ExperimentsTsai, M Y et al. | 2013
- 2331
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Investigation on Cu TSV-Induced KOZ in Silicon Chips: Simulations and ExperimentsTsai, Ming-Yi / Huang, Pu-Shan / Huang, Chen-Yu / Jao, Hsiu / Huang, Brady / Wu, Blacksmith / Lin, Yuan-Yuan / Liao, Will / Huang, Joe / Huang, Lawrence et al. | 2013
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Novel Strain Relief Design for Multilayer Thin Film Stretchable InterconnectsHsu, Yung-Yu / Lucas, Kylie / Davis, Dan / Elolampi, Brian / Ghaffari, Roozbeh / Rafferty, Conor / Dowling, Kevin et al. | 2013
- 2338
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A Novel Strain Relief Design for Multi-Layer Thin Film Stretchable InterconnectsHsu, Y-Y et al. | 2013
- 2346
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Solid State Device Phenomena - Investigation on the Direct Method for the Extraction of Semiconductor Material Parameters Using the EBIC Line Scan: Planar-Collector ConfigurationTan, C C et al. | 2013
- 2346
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Investigation on the Direct Method for the Extraction of Semiconductor Material Parameters Using the EBIC Line Scan: Planar-Collector ConfigurationTan, Chee Chin / Ong, Vincent K. S. / Radhakrishnan, K. et al. | 2013
- 2353
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Under-the-Barrier Model: An Extension of the Top-of-the-Barrier Model to Efficiently and Accurately Simulate Ultrascaled Nanowire TransistorsSzabo, Aron / Luisier, Mathieu et al. | 2013
- 2361
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Temperature Dependence and Postirradiation Annealing Response of the $1/f$ Noise of 4H-SiC MOSFETsZhang, Cher Xuan / Shen, Xiao / Zhang, En Xia / Fleetwood, Daniel M. / Schrimpf, Ronald D. / Francis, Sarah Ashley / Roy, Tania / Dhar, Sarit / Ryu, Sei-Hyung / Pantelides, Sokrates T. et al. | 2013
- 2368
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Influence of Frequency Dependant Time to Breakdown on High-K/Metal Gate ReliabilityKnebel, S et al. | 2013
- 2368
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Influence of Frequency Dependent Time to Breakdown on High-K/Metal Gate ReliabilityKnebel, Steve / Kupke, Steve / Schroeder, Uwe / Slesazeck, Stefan / Mikolajick, Thomas / Agaiby, Rimoon / Trentzsch, Martin et al. | 2013
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Molecular and Organic Devices - Polymer Photovoltaic Performance and Degradation on Spray and Spin-Coated Electron Transport Layer and Active LayerNgo, E et al. | 2013
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Investigation of Charge Injection and Relaxation in Multilayer Dielectric Stacks for Capacitive RF MEMS Switch ApplicationLi, Gang / Zhang, Wendong / Li, Pengwei / Sang, Shengbo / Hu, Jie / Chen, Xuyuan et al. | 2013
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Emerging Technologies and Devices - Bio-Inspired Stochastic Computing Using Binary CBRAM SynapsesSuri, M et al. | 2013
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2013 EDS J.J. Ebers Award| 2013
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Table of contents| 2013
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IEEE Transactions on Electron Devices publication information| 2013
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IEEE Transactions on Electron Devices information for authors| 2013