Analytical Current and Capacitance Models for Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors (English)
- New search for: Bae, M
- New search for: Bae, M
- New search for: Lee, K M
- New search for: Cho, E-S
- New search for: Kwon, H-I
- New search for: Kim, D M
- New search for: Kim, D H
In:
IEEE transactions on electron devices
;
60
, 10
; 3465-3473
;
2013
-
ISSN:
- Article (Journal) / Print
-
Title:Analytical Current and Capacitance Models for Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors
-
Contributors:
-
Published in:IEEE transactions on electron devices ; 60, 10 ; 3465-3473
-
Publisher:
- New search for: IEEE
-
Place of publication:New York, NY
-
Publication date:2013
-
ISSN:
-
ZDBID:
-
Type of media:Article (Journal)
-
Type of material:Print
-
Language:English
- New search for: 53.50 / 53.00 / 52.50 / 54.20
- Further information on Basic classification
- New search for: 770/5670
-
Keywords:
-
Classification:
-
Source:
Table of contents – Volume 60, Issue 10
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 2969
-
Table of contents| 2013
- 2974
-
A Warm Welcome to a New TED EditorCressler, John D. et al. | 2013
- 2974
-
SPECIAL ISSUE ON GaN ELECTRONIC DEVICES - EDITORIAL - A Warm Welcome to a New T-ED EditorCressler, J D et al. | 2013
- 2975
-
Guest Editorial Special Issue on GaN Electronic DevicesGhione, Giovanni / Chen, Kevin J. / Egawa, Takashi / Meneghesso, Gaudenzio / Palacios, Tomas / Quay, Ruediger et al. | 2013
- 2982
-
Scaling of GaN HEMTs and Schottky Diodes for Submillimeter-Wave MMIC ApplicationsShinohara, Keisuke / Regan, Dean C. / Tang, Yan / Corrion, Andrea L. / Brown, David F. / Wong, Joel C. / Robinson, John F. / Fung, Helen H. / Schmitz, Adele / Oh, Thomas C. et al. | 2013
- 2982
-
SPECIAL ISSUE PAPERS - Fabrication and Characterization of GaN Based Devices - Scaling of GaN HEMTs and Schottky Diodes for Submillimeter-Wave MMIC Applications (Invited Paper)Shinohara, K et al. | 2013
- 2997
-
Current Stability in Multi-Mesa-Channel AlGaN/GaN HEMTsOhi, Kota / Asubar, Joel Tacla / Nishiguchi, Kenya / Hashizume, Tamotsu et al. | 2013
- 2997
-
Current Stability in Multi-Mesa-Channel AlGaN/GaN HEMTs (Invited Paper)Ohi, K et al. | 2013
- 3005
-
p-Channel Enhancement and Depletion Mode GaN-Based HFETs With Quaternary BackbarriersHahn, Herwig / Reuters, Benjamin / Pooth, Alexander / Hollander, Bernd / Heuken, Michael / Kalisch, Holger / Vescan, Andrei et al. | 2013
- 3012
-
High-Performance GaN-Based Nanochannel FinFETs With/Without AlGaN/GaN HeterostructureIm, Ki-Sik / Won, Chul-Ho / Jo, Young-Woo / Lee, Jae-Hoon / Bawedin, Maryline / Cristoloveanu, Sorin / Lee, Jung-Hee et al. | 2013
- 3019
-
DC and RF Performance of Gate-Last AlN/GaN MOSHEMTs on Si With Regrown Source/DrainHuang, Tongde / Liu, Zhao Jun / Zhu, Xueliang / Ma, Jun / Lu, Xing / Lau, Kei May et al. | 2013
- 3025
-
Sidewall Dominated Characteristics on Fin-Gate AlGaN/GaN MOS-Channel-HEMTsTakashima, Shinya / Li, Zhongda / Chow, T. Paul et al. | 2013
- 3032
-
AlGaN/GaN-Based Lateral-Type Schottky Barrier Diode With Very Low Reverse Recovery Charge at High TemperatureLee, Jae-Hoon / Park, Chanho / Im, Ki-Sik / Lee, Jung-Hee et al. | 2013
- 3040
-
Fabrication and Characterization of Enhancement-Mode High-κ LaLuO3-AlGaN/GaN MIS-HEMTsYang, S et al. | 2013
- 3040
-
Fabrication and Characterization of Enhancement-Mode High- $\kappa~{\rm LaLuO}_{3}$-AlGaN/GaN MIS-HEMTsYang, Shu / Huang, Sen / Schnee, Michael / Zhao, Qing-Tai / Schubert, Jrgen / Chen, Kevin J. et al. | 2013
- 3040
-
Fabrication and Characterization of Enhancement-Mode High- Formula Not Shown -AlGaN/GaN MIS-HEMTsShu, Y. / Sen, H. / Schnee, M. / Qing-Tai, Z. / Schubert, J. / Chen, K.J. et al. | 2013
- 3047
-
AlGaN/GaN Three-Terminal Junction Devices for Rectification and Transistor Applications on 3C-SiC/Si PseudosubstratesHiller, Lars / Pezoldt, Jorg et al. | 2013
- 3053
-
High Power GaN HEMTs for Power Switching Applications - GaN on Si Technologies for Power Switching Devices (Invited Paper)Lshida, M et al. | 2013
- 3053
-
GaN on Si Technologies for Power Switching DevicesIshida, Masahiro / Ueda, Tetsuzo / Tanaka, Tsuyoshi / Ueda, Daisuke et al. | 2013
- 3060
-
Lateral and Vertical Transistors Using the AlGaN/GaN Heterostructure (Invited Review Paper)Chowdhury, S et al. | 2013
- 3060
-
Lateral and Vertical Transistors Using the AlGaN/GaN HeterostructureChowdhury, Srabanti / Mishra, Umesh K et al. | 2013
- 3067
-
High Voltage Vertical GaN p-n Diodes With Avalanche CapabilityKizilyalli, Isik C. / Edwards, Andrew P. / Nie, Hui / Disney, Don / Bour, Dave et al. | 2013
- 3071
-
Fabrication and Performance of Au-Free AlGaN/GaN-on-Silicon Power Devices With Formula Not Shown and Formula Not Shown Gate DielectricsVan Hove, M. / Xuanwu, K. / Stoffels, S. / Wellekens, D. / Ronchi, N. / Venegas, R. / Geens, K. / Decoutere, S. et al. | 2013
- 3071
-
Fabrication and Performance of Au-Free AlGaN/GaN-on-Silicon Power Devices With Al2O3 and Si3N4/Al2O3 Gate DielectricsVan Hove, M et al. | 2013
- 3071
-
Fabrication and Performance of Au-Free AlGaN/GaN-on-Silicon Power Devices With ${\rm Al}_{2}{\rm O}_{3}$ and ${\rm Si}_{3}{\rm N}_{4}/{\rm Al}_{2}{\rm O}_{3}$ Gate DielectricsVan Hove, Marleen / Kang, Xuanwu / Stoffels, Steve / Wellekens, Dirk / Ronchi, Nicolo / Venegas, Rafael / Geens, Karen / Decoutere, Stefaan et al. | 2013
- 3079
-
High Drain Current Density E-Mode ${\rm Al}_{2}{\rm O}_{3}$/AlGaN/GaN MOS-HEMT on Si With Enhanced Power Device Figure-of-Merit $(4\times 10^{8}~{\rm V}^{2}\Omega^{-1}{\rm cm}^{-2})$Freedsman, Joseph Jesudass / Kubo, Toshiharu / Egawa, Takashi et al. | 2013
- 3079
-
High Drain Current Density E-Mode Al2O3/AlGaN/GaN MOS-HEMT on Si With Enhanced Power Device Figure-of-Merit (4 × 108 V2Ω-1cm-2)Freedsman, J J et al. | 2013
- 3079
-
High Drain Current Density E-Mode Formula Not Shown /AlGaN/GaN MOS-HEMT on Si With Enhanced Power Device Figure-of-Merit Formula Not ShownFreedsman, J.J. / Kubo, T. / Egawa, T. et al. | 2013
- 3084
-
Improved Vertical Isolation for Normally-Off High Voltage GaN-HFETs on n-SiC SubstratesHilt, Oliver / Kotara, Przemyslaw / Brunner, Frank / Knauer, Arne / Zhytnytska, Rimma / Wurfl, Joachim et al. | 2013
- 3091
-
AlInN-Based HEMTs for Large-Signal Operation at 40 GHzTirelli, Stefano / Lugani, Lorenzo / Marti, Diego / Carlin, Jean-Francois / Grandjean, Nicolas / Bolognesi, C. R. et al. | 2013
- 3091
-
High Speed GaN HEMTs for RF Applications - AlInN-Based HEMTs for Large-Signal Operation at 40 GHz (Invited Paper)Tirelli, S et al. | 2013
- 3099
-
InAlN Barrier Scaled Devices for Very High Formula Not Shown and for Low-Voltage RF ApplicationsSaunier, P. / Schuette, M.L. / Tso-Min, C. / Hua-Quen, T. / Ketterson, A. / Beam, E. / Pilla, M. et al. | 2013
- 3099
-
InAlN Barrier Scaled Devices for Very High $f_{T}$ and for Low-Voltage RF ApplicationsSaunier, Paul / Schuette, Michael L. / Chou, Tso-Min / Tserng, Hua-Quen / Ketterson, Andrew / Beam, Edward / Pilla, Manyam / Gao, Xiang et al. | 2013
- 3099
-
InAlN Barrier Scaled Devices for Very High fT and for Low-Voltage RF Applications (Invited Paper)Saunter, P et al. | 2013
- 3105
-
Optimization of ${\rm Al}_{0.29}{\rm Ga}_{0.71}{\rm N}/{\rm GaN}$ High Electron Mobility Heterostructures for High-Power/Frequency PerformancesRennesson, Stephanie / Lecourt, Francois / Defrance, Nicolas / Chmielowska, Magdalena / Chenot, Sebastien / Lesecq, Marie / Hoel, Virginie / Okada, Etienne / Cordier, Yvon / De Jaeger, Jean-Claude et al. | 2013
- 3105
-
Optimization of Alo.29Gao.71N/GaN High Electron Mobility Heterostructures for High-Power/Frequency PerformancesRennesson, S et al. | 2013
- 3105
-
Optimization of Formula Not Shown High Electron Mobility Heterostructures for High-Power/Frequency PerformancesRennesson, S. / Lecourt, F. / Defrance, N. / Chmielowska, M. / Chenot, S. / Lesecq, M. / Hoel, V. / Okada, E. et al. | 2013
- 3112
-
High-Gain Millimeter-Wave AlGaN/GaN TransistorsSchwantuschke, Dirk / Bruckner, Peter / Quay, Rudiger / Mikulla, Michael / Ambacher, Oliver et al. | 2013
- 3119
-
AlGaN/GaN-Based HEMTs Failure Physics and Reliability: Mechanisms Affecting Gate Edge and Schottky JunctionZanoni, Enrico / Meneghini, Matteo / Chini, Alessandro / Marcon, Denis / Meneghesso, Gaudenzio et al. | 2013
- 3119
-
Reliability and Parasitic Issues in GaN HEMTs - AlGaN/GaN-Based HEMTs Failure Physics and Reliability: Mechanisms Affecting Gate Edge and Schottky Junction (Invited Paper)Zanoni, E et al. | 2013
- 3132
-
Reliability Analysis of Permanent Degradation on AlGaN/GaN HEMTsMarcon, D. / Meneghesso, G. / Tian-Li, W. / Stoffels, S. / Meneghini, M. / Zanoni, E. / Decoutere, S. et al. | 2013
- 3132
-
Reliability Analysis of Permanent Degradations on AlGaN/GaN HEMTsMarcon, Denis / Meneghesso, Gaudenzio / Wu, Tian-Li / Stoffels, Steve / Meneghini, Matteo / Zanoni, Enrico / Decoutere, Stefaan et al. | 2013
- 3142
-
AlGaN/GaN HEMT Degradation: An Electro-Thermo-Mechanical Simulationder Maur, Matthias Auf / Di Carlo, Aldo et al. | 2013
- 3149
-
Impact of Intrinsic Stress in Diamond Capping Layers on the Electrical Behavior of AlGaN/GaN HEMTsWang, Ashu / Tadjer, Marko J. / Anderson, Travis J. / Baranyai, Roland / Pomeroy, James W. / Feygelson, Tatyana I. / Hobart, Karl D. / Pate, Bradford B. / Calle, Fernando / Kuball, Martin et al. | 2013
- 3157
-
Gate Leakage Mechanisms in AlGaN/GaN and AlInN/GaN HEMTs: Comparison and ModelingTuruvekere, Sreenidhi / Karumuri, Naveen / Rahman, A. Azizur / Bhattacharya, Arnab / DasGupta, Amitava / DasGupta, Nandita et al. | 2013
- 3166
-
Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient MeasurementsBisi, Davide / Meneghini, Matteo / de Santi, Carlo / Chini, Alessandro / Dammann, Michael / Bruckner, Peter / Mikulla, Michael / Meneghesso, Gaudenzio / Zanoni, Enrico et al. | 2013
- 3176
-
Deep Levels Characterization in GaN HEMTs—Part II: Experimental and Numerical Evaluation of Self-Heating Effects on the Extraction of Traps Activation EnergyChini, Alessandro / Soci, Fabio / Meneghini, Matteo / Meneghesso, Gaudenzio / Zanoni, Enrico et al. | 2013
- 3183
-
Evaluation of Electron Trapping Speed of AlGaN/GaN HEMT With Real-Time Electroluminescence and Pulsed $I{-}V$ MeasurementsWakejima, Akio / Wilson, Amalraj Frank / Mase, Suguru / Joka, Takuya / Egawa, Takashi et al. | 2013
- 3183
-
Evaluation of Electron Trapping Speed of AlGaN/GaN HEMT With Real-Time Electroluminescence and Pulsed Formula Not Shown MeasurementsWakejima, A. / Wilson, A.F. / Mase, S. / Joka, T. / Egawa, T. et al. | 2013
- 3190
-
Methodology for the Study of Dynamic ON-Resistance in High-Voltage GaN Field-Effect TransistorsJin, Donghyun / del Alamo, Jesus A. et al. | 2013
- 3197
-
Threshold Voltage Shift Due to Charge Trapping in Dielectric-Gated AlGaN/GaN High Electron Mobility Transistors Examined in Au-Free TechnologyJohnson, Derek W. / Lee, Rinus T. P. / Hill, Richard J. W. / Wong, Man Hoi / Bersuker, Gennadi / Piner, Edwin L. / Kirsch, Paul D. / Harris, H. Rusty et al. | 2013
- 3204
-
Theory of Carriers Transport in III-Nitride Materials: State of the Art and Future OutlookBellotti, Enrico / Bertazzi, Francesco / Shishehchi, Sara / Matsubara, Masahiko / Goano, Michele et al. | 2013
- 3204
-
Simulation-Based Development of GaN HEMTs Devices - Theory of Carriers Transport in Ill-Nitride Materials: State of the Art and Future Outlook (Invited Paper)Bellotti, E et al. | 2013
- 3216
-
Robust Surface-Potential-Based Compact Model for GaN HEMT IC DesignKhandelwal, Sourabh / Yadav, Chandan / Agnihotri, Shantanu / Chauhan, Yogesh Singh / Curutchet, Arnaud / Zimmer, Thomas / De Jaeger, Jean-Claude / Defrance, Nicolas / Fjeldly, Tor A. et al. | 2013
- 3223
-
Electric Field Distribution Around Drain-Side Gate Edge in AlGaN/GaN HEMTs: Analytical ApproachSi, Jia / Wei, Jin / Chen, Wanjun / Zhang, Bo et al. | 2013
- 3230
-
Design and Simulation of 5–20-kV GaN Enhancement-Mode Vertical Superjunction HEMTLi, Zhongda / Chow, T. Paul et al. | 2013
- 3238
-
GaN-Based Robust Low-Noise AmplifiersColangeli, Sergio / Bentini, Andrea / Ciccognani, Walter / Limiti, Ernesto / Nanni, Antonio et al. | 2013
- 3238
-
GaN-Based Low Noise Amplifiers and Gate Drive Circuits - GaN-Based Robust Low-Noise AmplifiersColangeli, S et al. | 2013
- 3249
-
Capacitor-Less Gate Drive Circuit Capable of High-Efficiency Operation for Non-Insulating-Gate GaN FETsHattori, Fumiya / Umegami, Hirokatsu / Yamamoto, Masayoshi et al. | 2013
- 3256
-
REVIEW PAPER - Charge Loss Mechanisms of Nitride-Based Charge Trap Flash Memory DevicesLee, M C et al. | 2013
- 3256
-
Charge Loss Mechanisms of Nitride-Based Charge Trap Flash Memory DevicesLee, Meng Chuan / Wong, Hin Yong et al. | 2013
- 3265
-
REGULAR PAPERS - Silicon and Column IV Semiconductors Devices - Piezoelectric Strain Modulation in FETsvan Hemert, T et al. | 2013
- 3265
-
Piezoelectric Strain Modulation in FETsvan Hemert, Tom / Hueting, Raymond J. E. et al. | 2013
- 3271
-
Thulium Silicate Interfacial Layer for Scalable High-k/Metal Gate StacksLitta, Eugenio Dentoni / Hellstrom, Per-Erik / Henkel, Christoph / Ostling, Mikael et al. | 2013
- 3277
-
Interactions Between Line Edge Roughness and Random Dopant Fluctuation in Nonplanar Field-Effect Transistor VariabilityLeung, Greg / Chui, Chi On et al. | 2013
- 3285
-
Doping-Less Tunnel Field Effect Transistor: Design and InvestigationKumar, M. Jagadesh / Janardhanan, Sindhu et al. | 2013
- 3291
-
Characterization and Modeling of the Band-to-Band Current Variability of Nanoscale Device JunctionsGhetti, Andrea / Compagnoni, Christian Monzio / Calloni, Andrea / Vendrame, Loris / Spinelli, Alessandro S. / Lacaita, Andrea L. et al. | 2013
- 3298
-
Impact of Transistor Architecture (Bulk Planar, Trigate on Bulk, Ultrathin-Body Planar SOI) and Material (Silicon or III–V Semiconductor) on Variation for Logic and SRAM ApplicationsAgrawal, Nidhi / Kimura, Yoshie / Arghavani, Reza / Datta, Suman et al. | 2013
- 3305
-
Flexible High- Formula Not Shown /Metal Gate Metal/Insulator/Metal Capacitors on Silicon (100) FabricRojas, J.P. / Ghoneim, M.T. / Young, C.D. / Hussain, M.M. et al. | 2013
- 3305
-
Flexible High-$\kappa$/Metal Gate Metal/Insulator/Metal Capacitors on Silicon (100) FabricRojas, Jhonathan Prieto / Ghoneim, Mohamed Tarek / Young, Chadwin D. / Hussain, Muhammad Mustafa et al. | 2013
- 3305
-
Flexible High-κ/Metal Gate Metal/Insulator/Metal Capacitors on Silicon (100) FabricRojas, J P et al. | 2013
- 3310
-
Improvement of Electrical Properties in a Novel Partially Depleted SOI MOSFET With Emphasizing on the Hysteresis EffectAnvarifard, Mohammad K. / Orouji, Ali Asghar et al. | 2013
- 3318
-
More Accurate and Reliable Extraction of Tunneling Resistance in Tunneling FET and Verification in Small-Signal Circuit OperationCho, Seongjae / Kang, In Man / Kim, Kyung Rok et al. | 2013
- 3325
-
Gate-Stack Engineering in $n$-Type Ultrascaled Si Nanowire Field-Effect TransistorsLuisier, Mathieu / Schenk, Olaf et al. | 2013
- 3325
-
Gate-Stack Engineering in Formula Not Shown -Type Ultrascaled Si Nanowire Field-Effect TransistorsLuisier, M. / Schenk, O. et al. | 2013
- 3330
-
Heat Channeling in Extremely Thin Silicon-on-Insulator Devices: A Simulation StudyOrfanidou, Charis Mina / Giapintzakis, John et al. | 2013
- 3335
-
Theoretical Investigation of Trigate AlGaN/GaN HEMTsAlsharef, Mohamed A. / Granzner, Ralf / Schwierz, Frank et al. | 2013
- 3335
-
Compound Semiconductor Devices - Theoretical Investigation of Trigate AlGaN/GaN HEMTsAlsharef, M A et al. | 2013
- 3342
-
High-Performance InAs-On-Insulator n-MOSFETs With Ni-InGaAs S/D Realized by Contact Resistance Reduction TechnologyKim, SangHyeon / Yokoyama, Masafumi / Nakane, Ryosho / Ichikawa, Osamu / Osada, Takenori / Hata, Masahiko / Takenaka, Mitsuru / Takagi, Shinichi et al. | 2013
- 3351
-
On the Origin of Kink Effect in Current–Voltage Characteristics of AlGaN/GaN High Electron Mobility TransistorsKaushik, Janesh K. / Balakrishnan, V. Raman / Panwar, Brishbhan Singh / Muralidharan, Rangarajan et al. | 2013
- 3358
-
Study of Gate Junction Temperature in GaAs pHEMTs Using Gate Metal Resistance ThermometrySchwitter, Bryan K. / Parker, Anthony E. / Fattorini, Anthony P. / Mahon, Simon J. / Heimlich, Michael C. et al. | 2013
- 3365
-
Ultralow Leakage Current AlGaN/GaN Schottky Diodes With 3-D Anode StructureMatioli, Elison / Lu, Bin / Palacios, Tomas et al. | 2013
- 3371
-
Memory Devices and Technology - High-Performance and Robust SRAM Cell Based on Asymmetric Dual-k Spacer FinFETsPal, P K et al. | 2013
- 3371
-
High-Performance and Robust SRAM Cell Based on Asymmetric Dual- Formula Not Shown Spacer FinFETsPal, P.K. / Kaushik, B.K. / Dasgupta, S. et al. | 2013
- 3371
-
High-Performance and Robust SRAM Cell Based on Asymmetric Dual-$k$ Spacer FinFETsPal, Pankaj Kumar / Kaushik, Brajesh Kumar / Dasgupta, Sudeb et al. | 2013
- 3378
-
Dynamic Modeling of Dual Speed Ferroelectric and Charge Hybrid MemoryRajwade, Shantanu Rajaram / Auluck, Kshitij / Naoi, Taro A. / Jayant, Krishna / Kan, Edwin Chihchuan et al. | 2013
- 3385
-
The Impact of n-p-n Selector-Based Bipolar RRAM Cross-Point on Array PerformanceMandapati, Raju / Borkar, Abhijit Shripat / Srinivasan, V. S. Senthil / Bafna, Pranil / Karkare, Prateek / Lodha, Saurabh / Ganguly, Udayan et al. | 2013
- 3393
-
High-Performance Double-Layer Nickel Nanocrystal Memory by Ion Bombardment TechniqueLiu, Sheng-Hsien / Yang, Wen-Luh / Lin, Yu-Hsien / Wu, Chi-Chang / Chao, Tien-Sheng et al. | 2013
- 3400
-
Vacancy Cohesion-Isolation Phase Transition Upon Charge Injection and Removal in Binary Oxide-Based RRAM Filamentary-Type SwitchingKamiya, Katsumasa / Yang, Moon Young / Magyari-Kope, Blanka / Niwa, Masaaki / Nishi, Yoshio / Shiraishi, Kenji et al. | 2013
- 3407
-
Thin Film Transistors - Gigahertz Operation of a-IGZO Schottky DiodesChasin, A et al. | 2013
- 3407
-
Gigahertz Operation of a-IGZO Schottky DiodesChasin, Adrian / Nag, Manoj / Bhoolokam, Ajay / Myny, Kris / Steudel, Soeren / Schols, Sarah / Genoe, Jan / Gielen, Georges / Heremans, Paul et al. | 2013
- 3413
-
Low-Temperature Solution-Processed Zirconium Oxide Gate Insulators for Thin-Film TransistorsXifeng, Li / Enlong, Xin / Jianhua, Zhang et al. | 2013
- 3417
-
Surface Potential-Based Polycrystalline-Silicon Thin-Film Transistors Compact Model by Nonequilibrium ApproachIkeda, Hiroyuki / Sano, Nobuyuki et al. | 2013
- 3424
-
Sputtered ZnO Thin-Film Transistors With Carrier Mobility Over 50 ${\rm cm}^{2}/{\rm Vs}$Brox-Nilsen, Christian / Jin, Jidong / Luo, Yi / Bao, Peng / Song, Aimin M. et al. | 2013
- 3424
-
Sputtered ZnO Thin-Film Transistors With Carrier Mobility Over 50 cm2/VsBrox-Nilsen, C et al. | 2013
- 3424
-
Sputtered ZnO Thin-Film Transistors With Carrier Mobility Over 50 Formula Not ShownBrox-Nilsen, C. / Jidong, J. / Yi, L. / Peng, B. / Song, A.M. et al. | 2013
- 3430
-
Low Cell Gap Polymeric Liquid Crystal Lens for 2-D/3-D Switchable Auto-Stereoscopic DisplayMun, Byung-June / Baek, Ji-Ho / Lee, Joun Ho / Kim, Byeong Koo / Choi, Hyun Chul / Kim, Jae-Hoon / Lee, Gi-Dong et al. | 2013
- 3430
-
Optoelectronics, Displays, and Imaging - Low Cell Gap Polymeric Liquid Crystal Lens for 2-D/3-D Switchable Auto-Stereoscopic DisplayMun, B-J et al. | 2013
- 3435
-
Monte Carlo Simulation of Hot Carrier Transport in Heterogeneous Ge/${\rm Al}_{x}{\rm Ga}_{1-x}{\rm As}~(0\leq x\leq 0.8)$ Multilayer Avalanche PhotodiodesChia, Ching Kean / Dalapati, Goutam Kumar et al. | 2013
- 3435
-
Monte Carlo Simulation of Hot Carrier Transport in Heterogeneous Ge/ Formula Not Shown Multilayer Avalanche PhotodiodesChing, K.C. / Dalapati, G.K. et al. | 2013
- 3435
-
Monte Carlo Simulation of Hot Carrier Transport in Heterogeneous Ge/AlxGa1-xAs (0Chia, C K et al. | 2013
- 3442
-
SPAD Image Sensor With Analog Counting Pixel for Time-Resolved Fluorescence DetectionPancheri, Lucio / Massari, Nicola / Stoppa, David et al. | 2013
- 3450
-
A 252-${\rm V/lux}{\cdot}{\rm s}$, 16.7-Million-Frames-Per-Second 312-kpixel Back-Side-Illuminated Ultrahigh-Speed Charge-Coupled DeviceArai, Toshiki / Yonai, Jun / Hayashida, Tetsuya / Ohtake, Hiroshi / van Kuijk, Harry / Etoh, Takeharu Goji et al. | 2013
- 3450
-
A 252-V/lux.s, 16.7-Million-Frames-Per-Second 312-kpixel Back-Side-Illuminated Ultrahigh-Speed Charge-Coupled DeviceArai, T et al. | 2013
- 3450
-
A 252- Formula Not Shown, 16.7-Million-Frames-Per-Second 312-kpixel Back-Side-Illuminated Ultrahigh-Speed Charge-Coupled DeviceArai, T. / Jun, Y. / Hayashida, T. / Ohtake, H. / van Kuijk, H. / Etoh, T.G. et al. | 2013
- 3459
-
Closed-Form and Explicit Analytical Model for Crosstalk in CMOS PhotodiodesBlanco-Filgueira, Beatriz / Lopez, Paula / Roldan, Juan Bautista et al. | 2013
- 3465
-
Analytical Current and Capacitance Models for Amorphous Indium-Gallium-Zinc-Oxide Thin-Film TransistorsBae, Minkyung / Lee, Kyung Min / Cho, Eou-Sik / Kwon, Hyuck-In / Kim, Dong Myong / Kim, Dae Hwan et al. | 2013
- 3474
-
Annealing Effects of Ti/Au Contact on n-MgZnO/p-Si Ultraviolet-B PhotodetectorsHou, Yaonan / Mei, Zengxia / Liang, Huili / Ye, Daqian / Gu, Changzhi / Du, Xiaolong / Lu, Yicheng et al. | 2013
- 3478
-
Photo-Induced Coplanar Waveguide RF Switch and Optical Crosstalk on High-Resistivity Silicon Trap-Rich Passivated SubstrateAli, Khaled Ben / Neve, Cesar Roda / Gharsallah, Ali / Raskin, Jean-Pierre et al. | 2013
- 3485
-
Exoemission Properties of PDP Protective LayersChen, Yuxiang / Li, Qing / Kuang, Wenjian / Hu, Kai / Tolner, Harm et al. | 2013
- 3493
-
Impact Ionization in Absorption, Grading, Charge, and Multiplication Layers of InP/InGaAs SAGCM APDs With a Thick Charge LayerZhao, Yanli et al. | 2013
- 3500
-
Power-Rail ESD Clamp Circuit With Diode-String ESD Detection to Overcome the Gate Leakage Current in a 40-nm CMOS ProcessAltolaguirre, Federico Agustin / Ker, Ming-Dou et al. | 2013
- 3500
-
Solid-State Power and High Voltage Devices - Power-Rail ESD Clamp Circuit With Diode-String ESD Detection to Overcome the Gate Leakage Current in a 40-nm CMOS ProcessAltolaguirre, F A et al. | 2013
- 3508
-
Study on Dual Channel n-p-LDMOS Power Devices With Three TerminalsKong, Moufu / Du, Wenfang / Chen, Xingbi et al. | 2013
- 3515
-
High-Voltage LDMOS Transistor With Split-Gate Structure for Improved Electrical PerformanceNa, Kee-Yeol / Baek, Ki-Ju / Lee, Gun-Woong / Kim, Yeong-Seuk et al. | 2013
- 3521
-
Electrical Performance and Reliability Investigation of Cosputtered Cu/Ti Bonded InterconnectsChen, Hsiao-Yu / Hsu, Sheng-Yao / Chen, Kuan-Neng et al. | 2013
- 3521
-
Materials, Processing and Packaging - Electrical Performance and Reliability Investigation of Cosputtered Cu/Ti Bonded InterconnectsChen, H-Y et al. | 2013
- 3527
-
Solid State Device Phenomena - First Principles Simulations of Nanoscale Silicon Devices With Uniaxial StrainZhang, L et al. | 2013
- 3527
-
First Principles Simulations of Nanoscale Silicon Devices With Uniaxial StrainZhang, Lining / Zahid, Ferdows / Zhu, Yu / Liu, Lei / Wang, Jian / Guo, Hong / Chan, Philip Ching Ho / Chan, Mansun et al. | 2013
- 3534
-
Improved ON-State Reliability of Atom Switch Using Alloy ElectrodesTada, Munehiro / Sakamoto, Toshitsugu / Banno, Naoki / Okamoto, Koichiro / Iguchi, Noriyuki / Hada, Hiromitsu / Miyamura, Makoto et al. | 2013
- 3541
-
Determination of Diffusion Length for the Finite Thickness Normal-Collector Configuration Using EBIC TechniqueTan, Chee Chin / Ong, Vincent K. S. / Radhakrishnan, K. / Sunar, Siti Hairunnisah Bte et al. | 2013
- 3548
-
Solution of Time Dependent Joule Heat Equation for a Graphene Sheet Under Thomson EffectVerma, Rekha / Bhattacharya, Sitangshu / Mahapatra, Santanu et al. | 2013
- 3555
-
A Statistical Evaluation of Random Telegraph Noise of In-Pixel Source Follower Equivalent Surface and Buried Channel TransistorsKuroda, Rihito / Yonezawa, Akihiro / Teramoto, Akinobu / Li, Tsung-Ling / Tochigi, Yasuhisa / Sugawa, Shigetoshi et al. | 2013
- 3562
-
Three-Side Buttable Integrated Ultrasound Chip With a 16 Formula Not Shown 16 Reconfigurable Transceiver and Capacitive Micromachined Ultrasonic Transducer Array for 3-D Ultrasound Imaging SystemsSung-Jin, J. / Jong-Keun, S. / Oh-Kyong, K. et al. | 2013
- 3562
-
Three-Side Buttable Integrated Ultrasound Chip With a 16$\,\times\,$16 Reconfigurable Transceiver and Capacitive Micromachined Ultrasonic Transducer Array for 3-D Ultrasound Imaging SystemsJung, Sung-Jin / Song, Jong-Keun / Kwon, Oh-Kyong et al. | 2013
- 3562
-
Three-Side Buttable Integrated Ultrasound Chip With a 16 x 16 Reconfigurable Transceiver and Capacitive Micromachined Ultrasonic Transducer Array for 3-D Ultrasound Imaging SystemsJung, S-J et al. | 2013
- 3570
-
Design of a High-Harmonic Gyrotron With a Permanent Magnet SystemXu, Shou Xi / Liu, Pu Kun / Liu, G. F. / Geng, Z. H. / Du, Chao Hai / Shi, S. H. / Wang, H. / Gu, W. / Zhang, S. C. et al. | 2013
- 3570
-
Vacuum Electron Devices - Design of a High-Harmonic Gyrotron With a Permanent Magnet SystemXu, S X et al. | 2013
- 3576
-
Theory, Simulations, and Experiments of the Dispersion and Interaction Impedance for the Double-Slot Coupled-Cavity Slow Wave Structure in TWTHe, Fangming / Luo, Jirun / Zhu, Min / Guo, Wei et al. | 2013
- 3584
-
Graphene Base Transistors: A Simulation Study of DC and Small-Signal OperationDi Lecce, Valerio / Grassi, Roberto / Gnudi, Antonio / Gnani, Elena / Reggiani, Susanna / Baccarani, Giorgio et al. | 2013
- 3584
-
Emerging Technologies and Devices - Graphene Base Transistors: A Simulation Study of DC and Small-Signal OperationLecce, V D et al. | 2013
- 3592
-
High-Efficiency 7 GHz Doherty GaN MMIC Power Amplifiers for Microwave Backhaul Radio LinksCamarchia, Vittorio / Rubio, Jorge Jiulian Moreno / Pirola, Marco / Quaglia, Roberto / Colantonio, Paolo / Giannini, Franco / Giofre, Rocco / Piazzon, Luca / Emanuelsson, Thomas / Wegeland, Tobias et al. | 2013
- 3592
-
BRIEF PAPERS - High-Efficiency 7 GHz Doherty GaN MMIC Power Amplifiers for Microwave Backhaul Radio LinksCamarchia, V et al. | 2013
- 3596
-
Comparative Leakage Analysis of GeOI FinFET and Ge Bulk FinFETHu, Vita Pi-Ho / Fan, Ming-Long / Su, Pin / Chuang, Ching-Te et al. | 2013
- 3601
-
A Gain-Adaptive Column Amplifier for Wide-Dynamic-Range CMOS Image SensorsLe-Thai, Ha / Xhakoni, Adi / Gielen, Georges et al. | 2013
- 3605
-
Corrections to “Quantum Mechanical Performance Predictions of p-n-i-n Versus Pocketed Line Tunnel Field-Effect Transistors”Verreck, Devin / Verhulst, Anne S. / Kao, Kuo-Hsing / Vandenberghe, William G. / De Meyer, Kristin / Groeseneken, Guido et al. | 2013
- 3605
-
Corrections to ``Quantum Mechanical Performance Predictions of p-n-i-n Versus Pocketed Line Tunnel Field-Effect Transistors'' [Jul 13 2128-2134]Verreck, D. / Verhulst, A.S. / Kao, K.-H. / Vandenberghe, W.G. / De Meyer, K. / Groeseneken, G. et al. | 2013
- 3606
-
26th International Symposium on Power semiconductor Devices and ICs| 2013
- 3607
-
2014 IEEE International Reliablity Physics Symposium| 2013
- 3608
-
40th IEEE Photovoltaic Specialists Conference| 2013
- C1
-
Front cover| 2013
- C2
-
IEEE Transactions on Electron Devices publication information| 2013
- C3
-
IEEE Transactions on Electron Devices information for authors| 2013
-
COMMENTS AND CORRECTIONS - Correction to "Quantum Mechanical Performance Predictions of p-n-i-n Versus Pocketed Line Tunnel Field-Effect Transistors"Verreck, D et al. | 2013