Effects of Etching Residue on Positive Shift of Threshold Voltage in Amorphous Indium-Zinc-Oxide Thin-Film Transistors Based on Back-Channel-Etch Structure (English)
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In:
IEEE transactions on electron devices
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61
, 1
; 92-97
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2014
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ISSN:
- Article (Journal) / Print
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Title:Effects of Etching Residue on Positive Shift of Threshold Voltage in Amorphous Indium-Zinc-Oxide Thin-Film Transistors Based on Back-Channel-Etch Structure
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Contributors:
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Published in:IEEE transactions on electron devices ; 61, 1 ; 92-97
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Publisher:
- New search for: IEEE
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Place of publication:New York, NY
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Publication date:2014
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ISSN:
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ZDBID:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
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Table of contents – Volume 61, Issue 1
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
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A Warm Welcome to a New T-ED EditorCressler, John D. et al. | 2014
- 1
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EDITORIAL - A Warm Welcome to a New T-ED EditorCressler, J D et al. | 2014
- 2
-
A Bandgap-Engineered Silicon-Germanium Biristor for Low-Voltage OperationMoon, Joon-Bae / Moon, Dong-Il / Choi, Yang-Kyu et al. | 2014
- 2
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Silicon and Column IV Semiconductors Devices - A Bandgap-Engineered Silicon-Germanium Biristor for Low-Voltage OperationMoon, J-B et al. | 2014
- 8
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Process Optimization of Integrated SiCr Thin-Film Resistor for High-Performance Analog CircuitsKwon, Young-Cheon / Seol, Hyeon-Cheon / Hong, Seong-Kwan / Kwon, Oh-Kyong et al. | 2014
- 15
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A Detailed Failure Analysis Examination of the Effect of Thermal Cycling on Cu TSV ReliabilityOkoro, Chukwudi / Lau, June W. / Golshany, Fardad / Hummler, Klaus / Obeng, Yaw S. et al. | 2014
- 23
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A Computational Study on the Electronic Transport Properties of Ultranarrow Disordered Zigzag Graphene NanoribbonsDjavid, Nima / Khaliji, Kaveh / Tabatabaei, Seyed Mohammad / Pourfath, Mahdi et al. | 2014
- 30
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Effect of Load Capacitance and Input Transition Time on FinFET Inverter CapacitancesPandey, Archana / Raycha, Swati / Maheshwaram, Satish / Manhas, Sanjeev K. / Dasgupta, Sudeb / Saxena, Ashok K. / Anand, Bulusu et al. | 2014
- 37
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p-Type Nanowire Schottky Barrier MOSFETs: Comparative Study of Ge- and Si-Channel DevicesChoi, Wonchul / Lee, Jaehyun / Shin, Mincheol et al. | 2014
- 44
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Multiple Turn Ratios of On-Chip Transformer With Four Intertwining CoilsHsu, Heng-Ming / Chien, Chun-Tsai et al. | 2014
- 48
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An Open-Source Multiscale Framework for the Simulation of Nanoscale DevicesBruzzone, Samantha / Iannaccone, Giuseppe / Marzari, Nicola / Fiori, Gianluca et al. | 2014
- 54
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Statistical SBD Modeling and Characterization and Its Impact on SRAM CellsKim, Soo Youn / Ho, Chih-Hsiang / Roy, Kaushik et al. | 2014
- 60
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Evolution of Unified-RAM: 1T-DRAM and BE-SONOS Built on a Highly Scaled Vertical ChannelMoon, Dong-Il / Kim, Jee-Yeon / Moon, Joon-Bae / Kim, Dong-Oh / Choi, Yang-Kyu et al. | 2014
- 60
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Evolution of Unified-RAM: IT-DRAM and BE-SONOS Built on a Highly Scaled Vertical ChannelMoon, D-I et al. | 2014
- 66
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nMOS Short Channel Device Characteristics After Soft Oxide Breakdown and Implications for Reliability Projections and CircuitsNicollian, Paul E. / Chen, Min / Yang, Yang / Chancellor, Cathy A. / Reddy, Vijay K. et al. | 2014
- 73
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Enhancement of Electrical Stability in Oxide Thin-Film Transistors Using Multilayer Channels Grown by Atomic Layer DepositionAhn, Cheol Hyoun / Yun, Myung Gu / Lee, Sang Yeol / Cho, Hyung Koun et al. | 2014
- 73
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Thin Film Transistors - Enhancement of Electrical Stability in Oxide Thin-Film Transistors Using Multilayer Channels Grown by Atomic Layer DepositionAhn, C H et al. | 2014
- 79
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Negative-Bias Light Stress Instability Mechanisms of the Oxide-Semiconductor Thin-Film Transistors Using In–Ga-O Channel Layers Deposited With Different Oxygen Partial PressuresBak, Jun Yong / Yang, Shinhyuk / Ryu, Ho-Jun / Park, Sang Hee Ko / Hwang, Chi Sun / Yoon, Sung Min et al. | 2014
- 87
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Comparison of High-$\kappa~{\rm Gd}_{2}{\rm O}_{3}$ and ${\rm GdTiO}_{3}~\alpha$-InGaZnO Thin-Film TransistorsPan, Tung-Ming / Chen, Ching-Hung / Liu, Jiang-Hung / Chen, Fa-Hsyang / Her, Jim-Long / Koyama, Keiichi et al. | 2014
- 87
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Comparison of High- Formula Not Shown and Formula Not Shown -InGaZnO Thin-Film TransistorsPan, T. M. / Chen, C. H. / Liu, J. H. / Chen, F. H. / Her, J. L. / Koyama, K. et al. | 2014
- 87
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Comparison of High-K Gd2O3 and GdTiO3 -InGaZnO Thin-Film TransistorsPan, T-M et al. | 2014
- 92
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Effects of Etching Residue on Positive Shift of Threshold Voltage in Amorphous Indium–Zinc-Oxide Thin-Film Transistors Based on Back-Channel-Etch StructureLuo, Dongxiang / Xu, Hua / Li, Min / Tao, Hong / Wang, Lei / Peng, Junbiao / Xu, Miao et al. | 2014
- 98
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Accurate Capacitance Modeling and Characterization of Organic Thin-Film TransistorsZaki, Tarek / Scheinert, Susanne / Horselmann, Ingo / Rodel, Reinhold / Letzkus, Florian / Richter, Harald / Zschieschang, Ute / Klauk, Hagen / Burghartz, Joachim N. et al. | 2014
- 105
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Analysis of Thermal Resistance Characteristics of Power LED ModuleWang, Chien-Ping / Kang, Shung-Wen / Lin, Kuan-Min / Chen, Tzung-Te / Fu, Han-Kuei / Chou, Pei-Ting et al. | 2014
- 105
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Optoelectronics, Displays, and Imaging - Analysis of Thermal Resistance Characteristics of Power LED ModuleWang, C-P et al. | 2014
- 110
-
A Statistical Model for Signal-Dependent Charge Sharing in Image SensorsStefanov, Konstantin D. et al. | 2014
- 116
-
High-Density Capacitor Devices Based on Macroporous Silicon and Metal ElectroplatingVega, Didac / Reina, Jordi / Pavon, Ramon / Rodriguez, Angel et al. | 2014
- 116
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Materials, Processing and Packaging - High-Density Capacitor Devices Based on Macroporous Silicon and Metal ElectroplatingVega, D et al. | 2014
- 123
-
A Dual-Material Gate Junctionless Transistor With High- Formula Not Shown Spacer for Enhanced Analog PerformanceBaruah, R. K. / Paily, R. P. et al. | 2014
- 123
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Solid State Device Phenomena A Dual-Material Gate Junctionless Transistor With High-k Spacer for Enhanced Analog PerformanceBaruah, R K et al. | 2014
- 123
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A Dual-Material Gate Junctionless Transistor With High- $k$ Spacer for Enhanced Analog PerformanceBaruah, Ratul K. / Paily, Roy P. et al. | 2014
- 129
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A Prototype of Piezoresistive Fringe-Electrodes-Element Based on Conductive Polymer CompositeWang, Luheng / Li, Jia / Han, Yanyan et al. | 2014
- 129
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Sensors and Actuators - A Prototype of Piezoresistive Fringe-Electrodes-Element Based on Conductive Polymer CompositeWang, L et al. | 2014
- 136
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High-Sensitivity Charge-Transfer-Type pH Sensor With Quasi-Signal Removal StructureNakazawa, Hirokazu / Otake, Ryota / Futagawa, Masato / Dasai, Fumihiro / Ishida, Makoto / Sawada, Kazuaki et al. | 2014
- 141
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Characterization of High Power Microwave Radiation by an Axially Extracted VircatorVerma, Rishi / Shukla, Rohit / Sharma, Surender Kumar / Banerjee, Partha / Das, Rashmita / Deb, Pankaj / Prabaharan, T. / Das, Basanta / Mishra, Ekansh / Adhikary, Biswajit et al. | 2014
- 141
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Vacuum Electron Devices - Characterization of High Power Microwave Radiation by an Axially Extracted VircatorVerma, R et al. | 2014
- 147
-
Numerical Design and Optimization of a Curved Collector for a Q-Band Gyro-Traveling Wave TubeJiang, Wei / Luo, Yong / Yan, Ran et al. | 2014
- 151
-
Researches on an $X$-Band Sheet Beam KlystronZhao, Ding / Lu, Xi / Liang, Yuan / Yang, Xiudong / Ruan, Cunjun / Ding, Yaogen et al. | 2014
- 151
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Researches on an Formula Not Shown -Band Sheet Beam KlystronZhao, D. / Lu, X. / Liang, Y. / Yang, X. / Ruan, C. / Ding, Y. et al. | 2014
- 159
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Development of an S-Band High Average Power Multibeam Klystron With Bandwidth of 10%Gao, Dongping / Zhang, Zhaochuan / Ding, Yaogen / Shen, Bin / Ding, Haibing / Zhang, Zhiqiang / Cao, Jing / Gu, Honghong / Wang, Caiying / Wang, Feng et al. | 2014
- 166
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Analysis of Helical Slow-Wave Structures for Modeling Helix Thickness Using an Improved Helical-Harmonics Approximation—Part I: TheoryMahmoudi, Ali / Kamarei, Mahmoud / Shahabadi, Mahmoud et al. | 2014
- 172
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Analysis of Helical Slow-Wave Structures for Modeling Helix Thickness Using an Improved Helical-Harmonics Approximation—Part II: Simulation ResultsMahmoudi, Ali / Kamarei, Mahmoud / Shahabadi, Mahmoud et al. | 2014
- 178
-
Emerging Technologies and Devices - Optimization of n- and p-type TFETs Integrated on the Same InAs/AlxGa1-xSb Technology PlatformBaravelli, E et al. | 2014
- 178
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Optimization of n- and p-type TFETs Integrated on the Same ${\rm InAs}/{\rm Al}_{x}{\rm Ga}_{1-x}{\rm Sb}$ Technology PlatformBaravelli, Emanuele / Gnani, Elena / Grassi, Roberto / Gnudi, Antonio / Reggiani, Susanna / Baccarani, Giorgio et al. | 2014
- 178
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Optimization of n- and p-type TFETs Integrated on the Same Formula Not Shown Technology PlatformBaravelli, E. / Gnani, E. / Grassi, R. / Gnudi, A. / Reggiani, S. / Baccarani, G. et al. | 2014
- 186
-
A Comparative Study of Tunneling FETs Based on Graphene and GNR HeterostructuresGhobadi, Nayereh / Pourfath, Mahdi et al. | 2014
- 193
-
Design of U-Shape Channel Tunnel FETs With SiGe Source RegionsWang, Wei / Wang, Peng-Fei / Zhang, Chun-Min / Lin, Xi / Liu, Xiao-Yong / Sun, Qing-Qing / Zhou, Peng / Zhang, David Wei et al. | 2014
- 193
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BRIEF PAPERS - Design of U-Shape Channel Tunnel FETs With SiGe Source RegionsWang, W et al. | 2014
- 198
-
Analytical Expression for Thermionic Transport Through Isotype Heterojunction Interfaces of Arbitrary Doping RatioGil, Manuel / Yang, Jingfeng / Kleiman, Rafael N. et al. | 2014
- 202
-
An Effective Thermal Model for FinFET StructureCheng, Ming-Cheng / Smith, Jeffrey A. / Jia, Wangkun / Coleman, Ryan et al. | 2014
- 207
-
A Stress Concentration MOSFET StructureWang, Xiangzhan / Zeng, Qingping / Liu, Bin / Gan, Cheng / Luo, Qian / Yu, Qi / Liu, Yang / Tan, Kaizhou / Ying, Xianwei et al. | 2014
- 212
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COMMENTS AND CORRECTIONS - Corrections to "Multipactor Susceptibility Charts for Ridge and Multi-Ridge Waveguides"González-Iglesias, D et al. | 2014
- 212
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Corrections to “Multipactor Susceptibility Charts for Ridge and Multi-Ridge Waveguides”Gonzalez-Iglesias, Daniel / Soto, Pablo / Anza, Sergio / Gimeno, Benito / Boria, Vicente E. / Vicente, Carlos / Gil, Jordi et al. | 2014
- 213
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Corrections to “A Warm Welcome to a New T-ED Editor”Cressler, John D. et al. | 2014
- 214
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40th IEEE Photovoltaic Specialists Conference| 2014
- 215
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Fifteenth IEEE International Vacuum Electronics Conference (IVEC 2014)| 2014
- 216
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2014 Symposium on VLSI Technology| 2014
- C1
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Table of contents| 2014
- C2
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IEEE Transactions on Electron Devices publication information| 2014
- C3
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IEEE Transactions on Electron Devices information for authors| 2014