Visualization of Gate-Bias-Induced Carrier Redistribution in SiC Power DIMOSFET Using Scanning Nonlinear Dielectric Microscopy (English)
- New search for: Chinone, Norimichi
- New search for: Chinone, Norimichi
- New search for: Cho, Yasuo
In:
IEEE transactions on electron devices
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63
, 8
; 3165-3170
;
2016
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ISSN:
- Article (Journal) / Print
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Title:Visualization of Gate-Bias-Induced Carrier Redistribution in SiC Power DIMOSFET Using Scanning Nonlinear Dielectric Microscopy
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Contributors:Chinone, Norimichi ( author ) / Cho, Yasuo
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Published in:IEEE transactions on electron devices ; 63, 8 ; 3165-3170
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Publisher:
- New search for: IEEE
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Place of publication:New York, NY
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Publication date:2016
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ISSN:
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ZDBID:
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DOI:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
- New search for: 53.50 / 53.00 / 52.50 / 54.20
- Further information on Basic classification
- New search for: 770/5670
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Keywords:
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Source:
Table of contents – Volume 63, Issue 8
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 2987
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A Physics-Based Circuit Aging Model for Mixed-Mode Degradation in SiGe HBTsWier, Brian R. / Green, Keith / Kim, Jonggook / Zweidinger, David T. / Cressler, John D. et al. | 2016
- 2994
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Analytic Estimation of Thermal Resistance in HBTsChakravorty, Anjan / D'Esposito, Rosario / Balanethiram, Suresh / Fregonese, Sebastien / Zimmer, Thomas et al. | 2016
- 2999
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Effective Drive Current for Pass-Gate TransistorsZhang, Hao / Gupta, Mayank / Watt, Jeff / Wei, Lan et al. | 2016
- 3005
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Electrical Breakdown in Thin Si Oxide Modeled by a Quantum Point Contact NetworkHolloway, Gregory W. / Ivanov, Oleg / Gavrilov, Roman / Bluschke, Armin G. / Hold, Betina K. / Baugh, Jonathan et al. | 2016
- 3011
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A Novel Technique to Measure Interface Trap Density in an MIS Capacitor Using Time-Varying Magnetic FieldsRoy Choudhury, Aditya N. / Venkataraman, Venki et al. | 2016
- 3019
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Physical Insights Into Electric Field Modulation in Dual- $k$ Spacer Asymmetric Underlap FinFETDutta, Arka / Koley, Kalyan / Saha, Samar K. / Sarkar, Chandan Kumar et al. | 2016
- 3028
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Fully Depleted Ge CMOS Devices and Logic Circuits on SiWu, Heng / Ye, Peide D. et al. | 2016
- 3036
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ESD and Latchup Optimization of an Embedded-Floating-pMOS SCR-Incorporated BJTHuang, Chih-Yao / Chiu, Fu-Chien / Ou, Chien-Min / Chen, Quo-Ker / Huang, Yi-Jou / Tseng, Jen-Chou et al. | 2016
- 3044
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Switching Mechanisms Triggered by a Collector Voltage Ramp in Avalanche Transistors With Short-Connected Base and EmitterVainshtein, Sergey N. / Duan, Guoyong / Filimonov, Alexey V. / Kostamovaara, Juha T. et al. | 2016
- 3049
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Demonstration of Ge Nanowire CMOS Devices and Circuits for Ultimate ScalingWu, Heng / Wu, Wangran / Si, Mengwei / Ye, Peide D. et al. | 2016
- 3058
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Process-Dependence Analysis for Characteristic Improvement of Ring Oscillator Using 16-nm Bulk FinFET DevicesSu, Ping-Hsun / Li, Yiming et al. | 2016
- 3064
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Ultralow Capacitance Transient Voltage Suppressor DesignLo, Kuo-Hsuan / Huang, Chien-Hao / Weng, Wu-Te / Huang, Tsung-Yi / Su, Hung-Der / Gong, Jeng / Huang, Chih-Fang et al. | 2016
- 3069
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Electrical Effects of a Single Extended Defect in MOSFETsNi, Kai / Eneman, Geert / Simoen, Eddy / Mocuta, Anda / Collaert, Nadine / Thean, Aaron / Schrimpf, Ronald D. / Reed, Robert A. / Fleetwood, Dan et al. | 2016
- 3076
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0.1- $\mu \text{m}$ InAlN/GaN High Electron-Mobility Transistors for Power Amplifiers Operating at 71–76 and 81–86 GHz: Impact of Passivation and Gate RecessXu, Dong / Chu, Kanin / Diaz, Jose A. / Ashman, Michael D. / Komiak, J. J. / Mt. Pleasant, Louis M. / Vera, Alice / Seekell, Philip / Yang, Xiaoping / Creamer, Carlton et al. | 2016
- 3076
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0.1- \mu \text InAlN/GaN High Electron-Mobility Transistors for Power Amplifiers Operating at 71-76 and 81-86 GHz: Impact of Passivation and Gate RecessXu, Dong et al. | 2016
- 3084
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The Comparison of Current Ratio $I_{\mathrm{\scriptscriptstyle ON}}/I_{\mathrm{\scriptscriptstyle OFF}}$ and Mobility Between SiGe Substrate and GaAs Substrate In0.23Ga0.77As Channel MOSFETsKong, Xiangting / Liang, Renrong / Zhou, Xuliang / Li, Shiyan / Wang, Mengqi / Liu, Honggang / Wang, Jing / Wang, Wei / Pan, Jiaoqing et al. | 2016
- 3088
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Ultrathin Body InGaAs MOSFETs on III-V-On-Insulator Integrated With Silicon Active Substrate (III-V-OIAS)Lin, Jianqiang / Czornomaz, Lukas / Daix, Nicolas / Antoniadis, Dimitri A. / del Alamo, Jesus A. et al. | 2016
- 3096
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GaN High Electron Mobility Transistor Simulations With Full Wave and Hot Electron EffectsGrupen, Matt et al. | 2016
- 3103
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Toward Multiple-Bit-Per-Cell Memory Operation With Stable Resistance Levels in Phase Change NanodevicesGokce, Aisha / Cinar, Ibrahim / Ozdemir, Servet C. / Cogulu, Egecan / Stipe, Barry / Katine, Jordan A. / Ozatay, Ozhan et al. | 2016
- 3109
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Physical Unclonable Function Exploiting Sneak Paths in Resistive Cross-point ArrayGao, Ligang / Chen, Pai-Yu / Liu, Rui / Yu, Shimeng et al. | 2016
- 3116
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Investigation of Filamentary Current Fluctuations Features in the High-Resistance State of Ni/HfO2-Based RRAMGonzalez, Mireia Bargallo et al. | 2016
- 3123
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Self-Aligned Coplanar Top Gate In–Ga–ZnO Thin-Film Transistors Exposed to Various DUV Irradiation EnergiesRyu, Seung-Man / Kim, Myoeng-Ho / Jeon, Sung-Ho / Lim, Jun-Hyung / Choi, Duck-Kyun et al. | 2016
- 3123
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Self-Aligned Coplanar Top Gate In-G-ZnO Thin-Film Transistors Exposed to Various DUV Irradiation EnergiesSeung-Man Ryu et al. | 2016
- 3128
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Process Optimization and Device Characterization of Nonvolatile Charge Trap Memory Transistors Using In–Ga–ZnO Thin Films as Both Charge Trap and Active Channel LayersYun, Da-Jeong / Kang, Han-Byeol / Yoon, Sung-Min et al. | 2016
- 3135
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InSb Photodiodes for Monolithic Active Focal Plane Arrays on GaAs SubstratesPusino, Vincenzo / Xie, Chengzhi / Khalid, Ata / Steer, Matthew J. / Sorel, Marc / Thayne, Iain G. / Cumming, David R. S. et al. | 2016
- 3143
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The Efficiency and Reliability Improvement by Utilizing Quartz Airtight Packaging of UVC LEDsLu, Chien-Chun / Wang, Chien-Ping / Liu, Cheng-Yi / Hsu, Chen-Peng et al. | 2016
- 3147
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Electrically Controlled Photocatalytic Reduction of Graphene Oxide Sheets by ZnO Nanostructures, Suitable for Tunable Optoelectronic ApplicationsFeda, Mohammad Hosein / Khosravi, Yousef / Darbari, Sara / Abdollahi Nejand, Bahram et al. | 2016
- 3154
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Generation of Laser Pulses in the Megahertz Range of Repetition Frequencies by Low-Voltage AlGaAs/GaAs Laser-ThyristorsSlipchenko, Sergey O. / Podoskin, Alexandr A. / Soboleva, Olga S. / Veselov, Dmitrii A. / Zolotarev, Vasilii V. / Pikhtin, Nikita A. / Bagaev, Timur A. / Ladugin, Maxim A. / Marmalyuk, Aleksandr A. / Simakov, Vladimir A. et al. | 2016
- 3160
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Ultraviolet Photodetectors With 2-D Indium-Doped ZnO NanostructuresYoung, Sheng-Joue / Liu, Yi-Hsing et al. | 2016
- 3165
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Visualization of Gate-Bias-Induced Carrier Redistribution in SiC Power DIMOSFET Using Scanning Nonlinear Dielectric MicroscopyChinone, Norimichi / Cho, Yasuo et al. | 2016
- 3171
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Contact Extensions Over a High- $k$ Dielectric Layer for Surface Field Mitigation in High Power 4H–SiC Photoconductive SwitchesChowdhury, Animesh Roy / Mauch, Daniel / Joshi, Ravi P. / Neuber, Andreas A. / Dickens, James et al. | 2016
- 3177
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Quad-SCR Device for Cross-Domain ESD ProtectionAltolaguirre, Federico A. / Ker, Ming-Dou et al. | 2016
- 3185
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Modeling Erratic Behavior Due to High Current Filamentation in Bipolar Structures Under Dynamic Avalanche ConditionsSinha, Dheeraj Kumar / Chatterjee, Amitabh / Schrimpf, Ronald D. et al. | 2016
- 3193
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Investigation of Human-Body-Model and Machine-Model ESD Robustness on Stacked Low-Voltage Field-Oxide Devices for High-Voltage ApplicationsHuang, Yi-Jie / Ker, Ming-Dou et al. | 2016
- 3199
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Investigation of All Wet Chemical Process for the Barrier Formation in High Aspect Ratio Silicon ViasSandjaja, Marco / Stolle, Thomas / Bund, Andreas / Lang, Klaus-Dieter et al. | 2016
- 3205
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Systematic Characterization of Graphene ESD Interconnects for On-Chip ESD ProtectionChen, Qi / Ma, Rui / Zhang, Wei / Lu, Fei / Wang, Chenkun / Liang, Owen / Zhang, Feilong / Li, Cheng / Tang, He / Xie, Ya-Hong et al. | 2016
- 3213
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Analytical Drain Current Modeling of Double-Gate Tunnel Field-Effect TransistorsPal, Arnab / Dutta, Aloke K. et al. | 2016
- 3222
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Study of Hot-Carrier-Induced Traps in Nanoscale UTBB FD-SOI MOSFETs by Low-Frequency Noise MeasurementsKaratsori, Theano A. / Theodorou, Christoforos G. / Mescot, Xavier / Haendler, Sebastien / Planes, Nicolas / Ghibaudo, Gerard / Dimitriadis, Charalabos A. et al. | 2016
- 3229
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Field Sensors and Tunable Devices Using Magnetoelectric Hexaferrite on Silicon SubstratesZare, Saba / Somu, Sivasubramanian / Lombardi, Fabrizio / Vittoria, Carmine et al. | 2016
- 3236
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Silicon-on-Insulator Photoimpedance Sensor Using Capacitance DispersionSaxena, Tanuj / Shur, Michael et al. | 2016
- 3241
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Design Issues for Performance Enhancement in Nanostructured Silicon Oxide Biosensors: Modeling the Frequency ResponseGhosh, Hrilina / Kundu, Debarshi / RoyChaudhuri, Chirasree et al. | 2016
- 3249
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Optimization of CMOS-ISFET-Based Biomolecular Sensing: Analysis and Demonstration in DNA DetectionXu, Guangyu / Abbott, Jeffrey / Ham, Donhee et al. | 2016
- 3257
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Boron Nitride and Sapphire Windows for 95-GHz Gaussian RF BeamKesari, Vishal / Singh, Arun Kumar / Seshadri, Ramaswamy / Kamath, Sudhir et al. | 2016
- 3262
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A High-Power Single Rectangular Grating Sheet Electron Beam Traveling-Wave TubeZhang, Yabin / Wang, Zhanliang / Zhou, Qing / Liu, Shuaihong / Bo, Wenfei / Li, Xinyi / Wang, Yanshuai / Tang, Xianfeng / Gong, Huarong / Duan, Zhaoyun et al. | 2016
- 3270
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Secondary Electron Emission of Pt: Experimental Study and Comparison With Models in the Multipactor Energy RangeBronchalo, Enrique / Coves, Angela / Mata, Rafael / Gimeno, Benito / Montero, Isabel / Galan, Luis / Boria, Vicente E. / Mercade, Laura / Sanchis-Kilders, Esteban et al. | 2016
- 3278
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Deeper Insights of the Conduction Mechanisms in a Vacuum SOI NanotransistorRavariu, Cristian et al. | 2016
- 3284
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Design Study of a 372-GHz Higher Order Mode Input CouplerGarner, Jason R. / Zhang, Liang / Donaldson, Craig R. / Cross, Adrian W. / He, Wenlong et al. | 2016
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A Compact 2-D Analytical Model for Electrical Characteristics of Double-Gate Tunnel Field-Effect Transistors With a SiO2/High- $k$ Stacked Gate-Oxide StructureKumar, Sanjay / Goel, Ekta / Singh, Kunal / Singh, Balraj / Kumar, Mirgender / Jit, Satyabrata et al. | 2016
- 3300
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A Fitting Model for Asymmetric $I$ – $V$ Characteristics of Graphene FETs for Extraction of Intrinsic MobilitiesSatou, Akira / Tamamushi, Gen / Sugawara, Kenta / Mitsushio, Junki / Ryzhii, Victor / Otsuji, Taiichi et al. | 2016
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A Fitting Model for Asymmetric [Formula Omitted]-[Formula Omitted] Characteristics of Graphene FETs for Extraction of Intrinsic MobilitiesAkira Satou et al. | 2016
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Dynamic Error in Strain-Induced Magnetization Reversal of Nanomagnets Due to Incoherent Switching and Formation of Metastable States: A Size-Dependent StudyAl-Rashid, Md Mamun / Bandyopadhyay, Supriyo / Atulasimha, Jayasimha et al. | 2016
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Analytical Modeling of Wrap-Gate Carbon Nanotube FET With Parasitic Capacitances and Density of StatesDokania, Vishesh / Islam, Aminul / Dixit, Vivek / Tiwari, Shree Prakash et al. | 2016
- 3320
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Quantum Mechanical Confinement in the Fin Electron–Hole Bilayer Tunnel Field-Effect TransistorPadilla, Jose L. / Alper, Cem / Gamiz, Francisco / Ionescu, Adrian Mihai et al. | 2016
- 3327
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Vertical Slit FET at 7-nm Node and BeyondYang, Ping-Lin / Hook, Terence B. / Oldiges, Philip J. / Doris, Bruce B. et al. | 2016
- 3335
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Hall Effect in Thin-Film TransistorKimura, Mutsumi / Matsumoto, Takaaki / Yoshikawa, Akito / Matsuda, Tokiyoshi / Ozawa, Tokuro / Aoki, Koji / Kuo, Chih-Che et al. | 2016
- 3338
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Study of Work-Function Variation in High- $\kappa $ /Metal-Gate Gate-All-Around Nanowire MOSFETNam, Hyohyun / Lee, Youngtaek / Park, Jung-Dong / Shin, Changhwan et al. | 2016
- 3338
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Study of Work-Function Variation in High-[Formula Omitted]/Metal-Gate Gate-All-Around Nanowire MOSFETHyohyun Nam et al. | 2016
- 3342
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Reduction of TFET OFF-Current and Subthreshold Swing by Lightly Doped DrainWu, Jianzhi / Taur, Yuan et al. | 2016
- 3346
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Electrical Coupling of Monolithic 3-D InvertersYu, Yun Seop / Panth, Shreepad / Lim, Sung Kyu et al. | 2016
- 3350
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Controlling BTBT-Induced Parasitic BJT Action in Junctionless FETs Using a Hybrid ChannelKumar, Mamidala Jagadesh / Sahay, Shubham et al. | 2016
- 3354
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A Short-Channel-Effect-Degraded Noise Margin Model for Junctionless Double-Gate MOSFET Working on Subthreshold CMOS Logic GatesChiang, Te-Kuang et al. | 2016
- 3360
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High-Performance Flexible Tin-Zinc-Oxide Thin-Film Transistors Fabricated on Plastic SubstratesHan, Dedong / Chen, Zhuofa / Cong, Yingying / Yu, Wen / Zhang, Xing / Wang, Yi et al. | 2016
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Transactions on Electron Devices Special Issue on Flexible Electronics CFP| 2016
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Power Semiconductor Devices and Smart Power IC Technologies CFP| 2016
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2016 IEEE International Electron Devices Meeting| 2016
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IEDM Exhibits Program| 2016
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0.1-[Formula Omitted] InAlN/GaN High Electron-Mobility Transistors for Power Amplifiers Operating at 71-76 and 81-86 GHz: Impact of Passivation and Gate RecessDong Xu et al. | 2016