Sub-lithographic Patterning via Tilted Ion Implantation for Scaling Beyond the 7-nm Technology Node (English)
- New search for: Zheng, Peng
- New search for: Zheng, Peng
- New search for: Kim, Sang Wan
- New search for: Connelly, Daniel
- New search for: Kato, Kimihiko
- New search for: Ding, Fei
- New search for: Rubin, Leonard
- New search for: Liu, Tsu-Jae King
In:
IEEE transactions on electron devices
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64
, 1
; 231-236
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2017
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ISSN:
- Article (Journal) / Print
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Title:Sub-lithographic Patterning via Tilted Ion Implantation for Scaling Beyond the 7-nm Technology Node
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Contributors:Zheng, Peng ( author ) / Kim, Sang Wan / Connelly, Daniel / Kato, Kimihiko / Ding, Fei / Rubin, Leonard / Liu, Tsu-Jae King
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Published in:IEEE transactions on electron devices ; 64, 1 ; 231-236
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Publisher:
- New search for: IEEE
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Place of publication:New York, NY
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Publication date:2017
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DOI:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
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Table of contents – Volume 64, Issue 1
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 3
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The Charge Plasma n-p-n Impact Ionization MOS on FDSOI Technology: Proposal and AnalysisLahgere, Avinash / Kumar, Mamidala Jagadesh et al. | 2017
- 8
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The 36 V Bipolar: $\beta \times V_{a} \times \text {fT} \times \text {BV} \times \text {JfT} \times$ Linearity TradeoffCoyne, Edward J. / Whiston, Shay / O hAnnaidh, Breandan Pol / McAuliffe, Donal P. / Lane, Bill et al. | 2017
- 8
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The 36 V Bipolar: \beta \times V \times \text \times \text \times \text \times Linearity TradeoffCoyne, Edward J et al. | 2017
- 15
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Small-Area Si Photovoltaics for Low-Flux Infrared Energy HarvestingMoon, Eunseong / Blaauw, David / Phillips, Jamie D. et al. | 2017
- 21
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Symmetric Operation in an Extended Back Gate JLFET for Scaling to the 5-nm Regime Considering Quantum Confinement EffectsSahay, Shubham / Kumar, Mamidala Jagadesh et al. | 2017
- 28
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ESD Behavior of Tunnel FET DevicesKranthi, Nagothu Karmel / Shrivastava, Mayank et al. | 2017
- 37
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Physical Differences in Hot Carrier Degradation of Oxide Interfaces in Complementary (n-p-n+p-n-p) SiGe HBTsRaghunathan, Uppili S. / Ying, Hanbin / Wier, Brian R. / Omprakash, Anup P. / Chakraborty, Partha S. / Bantu, Tikurete G. / Yasuda, Hiroshi / Menz, Philip / Cressler, John D. et al. | 2017
- 45
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An Analytical Model of Drain Current in a Nanoscale Circular Gate TFETGoswami, Rupam / Bhowmick, Brinda et al. | 2017
- 52
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Impact of Fin Height and Fin Angle Variation on the Performance Matrix of Hybrid FinFETsPradhan, Kumar Prasannajit / Saha, Samar K. / Sahu, Prasanna Kumar / Priyanka, et al. | 2017
- 58
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Nanoscale FETs Simulation Based on Full-Complex-Band Structure and Self-Consistently Solved Atomic PotentialZhang, Xiaoyi / Lam, Kai-Tak / Low, Kain Lu / Yeo, Yee-Chia / Liang, Gengchiau et al. | 2017
- 66
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Analytical Drain Current Compact Model in the Depletion Operation Region of Short-Channel Triple-Gate Junctionless TransistorsOproglidis, Theodoros A. / Tsormpatzoglou, Andreas / Tassis, Dimitrios H. / Karatsori, Theano A. / Barraud, Sylvain / Ghibaudo, Gerard / Dimitriadis, Charalabos A. et al. | 2017
- 73
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Field-Related Failure of GaN-on-Si HEMTs: Dependence on Device Geometry and PassivationRossetto, I. / Meneghini, M. / Pandey, S. / Gajda, M. / Hurkx, G. A. M. / Croon, J. A. / Sonsky, J. / Meneghesso, G. / Zanoni, E. et al. | 2017
- 78
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Characterization of AlGaN/GaN HEMTs Using Gate Resistance ThermometryPavlidis, Georges / Pavlidis, Spyridon / Heller, Eric R. / Moore, Elizabeth A. / Vetury, Ramakrishna / Graham, Samuel et al. | 2017
- 84
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Influence of the Heterojunction Spacer on the Performance of AlGaN/GaN/AlGaN Resonant Tunneling DiodesGao, Bo / Ma, Yao / Liu, Yang / Gong, Min et al. | 2017
- 89
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Enhancement of $f_{\mathrm {max}}$ to 910 GHz by Adopting Asymmetric Gate Recess and Double-Side-Doped Structure in 75-nm-Gate InAlAs/InGaAs HEMTsTakahashi, Tsuyoshi / Kawano, Yoichi / Makiyama, Kozo / Shiba, Shoichi / Sato, Masaru / Nakasha, Yasuhiro / Hara, Naoki et al. | 2017
- 89
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Enhancement of f} to 910 GHz by Adopting Asymmetric Gate Recess and Double-Side-Doped Structure in 75-nm-Gate InAlAs/InGaAs HEMTsTakahashi, Tsuyoshi et al. | 2017
- 96
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Scalable GaSb/InAs Tunnel FETs With Nonuniform Body ThicknessHuang, Jun Z. / Long, Pengyu / Povolotskyi, Michael / Klimeck, Gerhard / Rodwell, Mark J. W. et al. | 2017
- 102
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Iso-Trapping Measurement Technique for Characterization of Self-Heating in a GaN HEMTAlbahrani, Sayed Ali / Parker, Anthony / Heimlich, Michael / Schwitter, Bryan et al. | 2017
- 109
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Experimental Studies of the Frequency Dependence of the Low-Barrier Mott Diode ImpedanceVostokov, N. V. / Shashkin, V. I. et al. | 2017
- 115
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Combining High Hole Concentration in p-GaN and High Mobility in u-GaN for High p-Type Conductivity in a p-GaN/u-GaN Alternating-Layer NanostructureChen, Hao-Tsung / Su, Chia-Ying / Tu, Charng-Gan / Yao, Yu-Feng / Lin, Chun-Han / Wu, Yuh-Renn / Kiang, Yean-Woei / Yang, Chih-Chung C. C. et al. | 2017
- 121
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Tunneling Negative Differential Resistance-Assisted STT-RAM for Efficient Read and Write OperationsWang, Shaodi / Pan, Andrew / Chui, Chi On / Gupta, Puneet et al. | 2017
- 130
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Feasibility of InxGa1–xAs High Mobility Channel for 3-D NAND MemoryCapogreco, E. / Subirats, A. / Lisoni, J. G. / Arreghini, A. / Kunert, B. / Guo, W. / Tan, C.-L. / Delhougne, R. / Van den bosch, G. / De Meyer, K. et al. | 2017
- 137
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Self-Heating During submicrosecond Current Transients in Pr0.7Ca0.3MnO3-Based RRAMPanwar, N. / Khanna, A. / Kumbhare, P. / Chakraborty, I. / Ganguly, U. et al. | 2017
- 145
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Analysis of the Meyer-Neldel Rule Based on a Temperature-Dependent Model for Thin-Film TransistorsHan, Zhiyuan / Wang, Mingxiang et al. | 2017
- 153
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The Effect of Drain Bias Stress on the Instability of Turned-OFF Amorphous HfInZnO Thin-Film Transistors Under Light IrradiationKwon, Dae Woong / Kim, Jang Hyun / Park, Byung-Gook et al. | 2017
- 159
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Effect of Active Layer Thickness on Device Performance of Tungsten-Doped InZnO Thin-Film TransistorPark, Hyun-Woo / Park, Kyung / Kwon, Jang-Yeon / Choi, Dukhyun / Chung, Kwun-Bum et al. | 2017
- 164
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Low-Resistive High-Work-Function Gate Electrode for Transparent a-IGZO TFTsJang, Woo Jae / Lee, Myung Keun / Yoo, Jinhan / Kim, Eungtaek / Yang, Dae Young / Park, Junhong / Park, Jeong Woo / Park, Sang-Hee Ko / Choi, Kyung Cheol et al. | 2017
- 170
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Degradation Mechanisms of Amorphous InGaZnO Thin-Film Transistors Used in Foldable Displays by Dynamic Mechanical StressLee, Sang Myung / Shin, Dongseok / Yun, Ilgu et al. | 2017
- 176
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Infrared and Terahertz Modulation Characteristics of n-GeBi/p-Si PhotodiodesZhang, Dainan / Jin, Lichuan / Liao, Yulong / Liu, Yang / Wen, Tianlong et al. | 2017
- 182
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Multichip LED Modules With V-Groove Surfaces for Light Extraction Efficiency Enhancements Considering Roughness ScatteringDing, Xinrui / Tang, Yong / Li, Zongtao / Li, Jiasheng / Xie, Yingxi / Lin, Liwei et al. | 2017
- 189
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An AMOLED Panel Test System Using Universal Data Driver ICs for Various Pixel StructuresSeol, Hyeon-Cheon / Ra, Jong-Hyun / Hong, Seong-Kwan / Kwon, Oh-Kyong et al. | 2017
- 195
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Effects of MgxZn1-xO Thickness on the Bandwidth of Metal–Semiconductor–Metal Bandpass PhotodetectorsHwang, Jun-Dar / Lin, Guan-Syun / Hwang, Sheng-Beng et al. | 2017
- 200
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Defect-Related Degradation of AlGaN-Based UV-B LEDsMonti, Desiree / Meneghini, Matteo / De Santi, Carlo / Meneghesso, Gaudenzio / Zanoni, Enrico / Glaab, Johannes / Rass, Jens / Einfeldt, Sven / Mehnke, Frank / Enslin, Johannes et al. | 2017
- 206
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Solution Processed Amorphous ZnSnO Thin-Film PhototransistorsFeng, Lisha / Yu, Genyuan / Li, Xifeng / Zhang, Jianhua / Ye, Zhizhen / Lu, Jianguo et al. | 2017
- 211
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A Tileable CMOS X-Ray Line Detector Using Time-Delay-Integration With Pseudomultisampling for Large-Sized Dental X-Ray Imaging SystemsJo, Yun-Rae / Hong, Seong-Kwan / Kwon, Oh-Kyong et al. | 2017
- 217
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Optimization and New Structure of Superjunction With Isolator LayerZhang, Wentong / Zhang, Bo / Qiao, Ming / Li, Zehong / Luo, Xiaorong / Li, Zhaoji et al. | 2017
- 224
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The $R_{\mathrm{\scriptscriptstyle ON},\mathrm {min}}$ of Balanced Symmetric Vertical Super Junction Based on R-Well ModelZhang, Wentong / Zhang, Bo / Qiao, Ming / Li, Zehong / Luo, Xiaorong / Li, Zhaoji et al. | 2017
- 224
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The R,\mathrm } of Balanced Symmetric Vertical Super Junction Based on R-Well ModelZhang, Wentong et al. | 2017
- 231
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Sub-lithographic Patterning via Tilted Ion Implantation for Scaling Beyond the 7-nm Technology NodeZheng, Peng / Kim, Sang Wan / Connelly, Daniel / Kato, Kimihiko / Ding, Fei / Rubin, Leonard / Liu, Tsu-Jae King et al. | 2017
- 237
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RF Passive Components Based on Aluminum Nitride Cross-Sectional Lamé-Mode MEMS ResonatorsCassella, Cristian / Chen, Guofeng / Qian, Zhenyun / Hummel, Gwendolyn / Rinaldi, Matteo et al. | 2017
- 244
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Impedance Spectroscopic Analysis of the InSe/ZnSe/InSe InterfaceAl Garni, Sabah E. / Qasrawi, Atef F. et al. | 2017
- 250
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Thermoradiative Energy Conversion With Quasi-Fermi Level VariationsFernandez, Julio J. et al. | 2017
- 256
-
Consistency of the Two Component Composite Modeling Framework for NBTI in Large and Small Area p-MOSFETsChaudhary, Ankush / Fernandez, Beryl / Parihar, Narendra / Mahapatra, Souvik et al. | 2017
- 264
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An Improved Analytical Model for Carrier Multiplication Near Breakdown in DiodesHueting, Raymond J. E. / Heringa, Anco / Boksteen, Boni K. / Dutta, Satadal / Ferrara, Alessandro / Agarwal, Vishal / Annema, Anne Johan et al. | 2017
- 271
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A Charge-Plasma-Based Dielectric-Modulated Junctionless TFET for Biosensor Label-Free DetectionSingh, Deepika / Pandey, Sunil / Nigam, Kaushal / Sharma, Dheeraj / Yadav, Dharmendra Singh / Kondekar, Pravin et al. | 2017
- 279
-
Electrolyte-Gated FETs Based on Oxide Semiconductors: Fabrication and ModelingMarques, Gabriel Cadilha / Garlapati, Suresh Kumar / Chatterjee, Debaditya / Dehm, Simone / Dasgupta, Subho / Aghassi, Jasmin / Tahoori, Mehdi B. et al. | 2017
- 286
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An Improved Ku-band MILO With Tapered Choke Cavity and Enlarged First Interaction CavityJiang, Tao / He, Juntao / Zhang, Jiande / Li, Zhiqiang / Ling, Junpu et al. | 2017
- 293
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A Novel Wire-Wrap Slow-Wave Structure for Terahertz Backward Wave Oscillator ApplicationsXu, Changpeng / Yin, Yong / Bi, Liangjie / Zhang, Zhang / Chang, Zhiwei / Rauf, Abdur / Ullah, Safi / Wang, Bin / Meng, Lin et al. | 2017
- 300
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Simulations of Sectioned Cavity for High-Harmonic GyrotronBandurkin, Ilya V. / Kalynov, Yury K. / Makhalov, Petr B. / Osharin, Ivan V. / Savilov, Andrey V. / Zheleznov, Ilya V. et al. | 2017
- 306
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Design and Simulation of Low-Power Logic Gates Based on Nanoscale Side-Contacted FEDJafari Touchaei, Behnam / Manavizadeh, Negin et al. | 2017
- 312
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3-D Memristor Crossbars for Analog and Neuromorphic Computing ApplicationsAdam, Gina C. / Hoskins, Brian D. / Prezioso, Mirko / Merrikh-Bayat, Farnood / Chakrabarti, Bhaswar / Strukov, Dmitri B. et al. | 2017
- 319
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Fokker—Planck Study of Parameter Dependence on Write Error Slope in Spin-Torque SwitchingXie, Yunkun / Behin-Aein, Behtash / Ghosh, Avik W. et al. | 2017
- 325
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Consideration of the Effect of Barrier Height on the Variation of Specific Contact Resistance With TemperatureTran, Hiep N. / Bui, Tuan A. / Collins, Aaron M. / Holland, Anthony S. et al. | 2017
- 329
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Comparison of SOI Versus Bulk FinFET Technologies for 6T-SRAM Voltage Scaling at the 7-/8-nm NodeZhang, Xi / Connelly, Daniel / Takeuchi, Hideki / Hytha, Marek / Mears, Robert J. / Liu, Tsu-Jae King et al. | 2017
- 333
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Effective 3-D Device Electrothermal Simulation Analysis of Influence of Metallization Geometry on Multifinger Power HEMTs PropertiesChvala, Ales / Marek, Juraj / Pribytny, Patrik / Satka, Alexander / Donoval, Martin / Donoval, Daniel et al. | 2017
- 412
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Design and analysis of polarity controlled electrically doped tunnel FET with bandgap engineering for analog/RF applicationsKondekar, Pravin N et al. | 2017
- 438
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Mechanism and origin of hysteresis in oxide thin-film transistor and its application on 3-D nonvolatile memoryZhi Ye et al. | 2017
- 494
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The influence of processing conditions on the 3-d interconnected structure of nanosilver pasteStuckner, Joshua A et al. | 2017
- 571
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Dynamic and power performance of multiple state electrostatically formed nanowire transistorsAssif, M et al. | 2017
- 638
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Demonstration of detecting small pH changes using high-sensitivity amorphous InGaZnO.sub.4 thin-film transistor pH sensor systemTakechi, Kazushige et al. | 2017
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