Low-temperature atomic layer deposition-grown Al2O3 gate dielectric for GaN/AlGaN/GaN MOS HEMTs: Impact of deposition conditions on interface state density (English)
- New search for: Ťapajna, Milan
- New search for: Ťapajna, Milan
- New search for: Válik, Lukáš
- New search for: Gucmann, Filip
- New search for: Gregušová, Dagmar
- New search for: Fröhlich, Karol
- New search for: Haščík, Štefan
- New search for: Dobročka, Edmund
- New search for: Tóth, Lajos
- New search for: Pécz, Béla
- New search for: Kuzmík, Ján
In:
Journal of vacuum science and technology / B
;
35
, 1
; 1
;
2017
-
ISSN:
- Article (Journal) / Print
-
Title:Low-temperature atomic layer deposition-grown Al2O3 gate dielectric for GaN/AlGaN/GaN MOS HEMTs: Impact of deposition conditions on interface state density
-
Contributors:Ťapajna, Milan ( author ) / Válik, Lukáš / Gucmann, Filip / Gregušová, Dagmar / Fröhlich, Karol / Haščík, Štefan / Dobročka, Edmund / Tóth, Lajos / Pécz, Béla / Kuzmík, Ján
-
Published in:Journal of vacuum science and technology / B ; 35, 1 ; 1
-
Publisher:
- New search for: Inst.
-
Place of publication:New York, NY
-
Publication date:2017
-
ISSN:
-
ZDBID:
-
DOI:
-
Type of media:Article (Journal)
-
Type of material:Print
-
Language:English
- New search for: 51.30 / 50.94 / 53.55 / 53.56
- Further information on Basic classification
-
Keywords:
-
Classification:
-
Source:
Table of contents – Volume 35, Issue 1
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
-
Effects of the extension of conductive filaments, a simulation approachVillena, Marco A. / Roldán, Juan B. / García-Fernández, Pedro / Jiménez-Molinos, Francisco et al. | 2017
-
Low-temperature atomic layer deposition-grown Al2O3 gate dielectric for GaN/AlGaN/GaN MOS HEMTs: Impact of deposition conditions on interface state densityŤapajna, Milan / Válik, Lukáš / Gucmann, Filip / Gregušová, Dagmar / Fröhlich, Karol / Haščík, Štefan / Dobročka, Edmund / Tóth, Lajos / Pécz, Béla / Kuzmík, Ján et al. | 2017
-
Effect of illumination and electric field intensity on the efficiency improvement of amorphous silicon tandem solar cellsScuto, Andrea / Gerardi, Cosimo / Battaglia, Anna / Lombardo, Salvatore et al. | 2017
-
Effects of annealing on top-gated MoS2 transistors with HfO2 dielectricZhao, Peng / Azcatl, Angelica / Bolshakov, Pavel / Moon, Jiyoung / Hinkle, Christopher L. / Hurley, Paul K. / Wallace, Robert M. / Young, Chadwin D. et al. | 2017
-
Transmission microwave spectroscopy for local characterization of dielectric materialsLucibello, Andrea / Joseph, Christopher Hardly / Proietti, Emanuela / Sardi, Giovanni Maria / Capoccia, Giovanni / Marcelli, Romolo et al. | 2017
-
Applications of clustering model to bimodal distributions for dielectric breakdownWu, Ernest Y. / Bolam, Ronald / Filippi, Ronald / Stathis, James H. / Li, Baozhen / Kim, Andrew et al. | 2017
-
Impact of temperature on conduction mechanisms and switching parameters in HfO2-based 1T-1R resistive random access memories devicesPérez, Eduardo / Wenger, Christian / Grossi, Alessandro / Zambelli, Cristian / Olivo, Piero / Roelofs, Robin et al. | 2017
-
Impact of low thermal processes on reliability of high-k/metal gate stacksTsiara, Artemisia / Garros, Xavier / Lu, Cao-Minh Vincent / Fenouillet-Béranger, Claire / Ghibaudo, Gerard et al. | 2017
-
In-depth study of the physics behind resistive switching in TiN/Ti/HfO2/W structuresGonzález-Cordero, Gerardo / Jiménez-Molinos, Francisco / Roldán, Juan Bautista / González, Mireia Bargallo / Campabadal, Francesca et al. | 2017
-
Analysis and in situ observation of humidity dependent atomic layer deposited-Al2O3 degradationRückerl, Andreas / Huppmann, Sophia / Mandl, Martin / Katz, Simeon / Zeisel, Roland et al. | 2017
-
Function-fit model for the rate of conducting filament generation in constant voltage-stressed multilayer oxide stacksRodriguez-Fernandez, A. / Suñé, J. / Miranda, E. / González, M. B. / Campabadal, F. et al. | 2017
-
Effects of interface states and near interface traps on the threshold voltage stability of GaN and SiC transistors employing SiO2 as gate dielectricFiorenza, Patrick / Greco, Giuseppe / Giannazzo, Filippo / Iucolano, Ferdinando / Roccaforte, Fabrizio et al. | 2017
-
High-k/GaN interface engineering toward AlGaN/GaN MIS-HEMT with improved Vth stabilitySzabó, Nadine / Wachowiak, Andre / Winzer, Annett / Ocker, Johannes / Gärtner, Jan / Hentschel, Rico / Schmid, Alexander / Mikolajick, Thomas et al. | 2017
-
Mapping of CMOS FET degradation in bias space—Application to dram peripheral devicesKaczer, B. / Franco, J. / Tyaginov, S. / Jech, M. / Rzepa, G. / Grasser, T. / O'Sullivan, B. J. / Ritzenhaler, R. / Schram, T. / Spessot, A. et al. | 2017
-
Effect of oxide traps on channel transport characteristics in graphene field effect transistorsBonmann, Marlene / Vorobiev, Andrei / Stake, Jan / Engström, Olof et al. | 2017
-
Barrier tuning of atomic layer deposited Ta2O5 and Al2O3 in double dielectric diodesNemr Noureddine, Ibrahim / Sedghi, Naser / Mitrovic, Ivona Z. / Hall, Steve et al. | 2017
-
Reliability improvements of TiN/Al2O3/TiN for linear high voltage metal–insulator–metal capacitors using an optimized thermal treatmentLefevre, Aude / Ferreira, Delphine / Veillerot, Marc / Barnes, Jean-Paul / Parat, Guy / Czernohorsky, Malte / Lallemand, Florent et al. | 2017
-
Effects of various bias and temperature stresses on low-frequency noise properties of amorphous InGaZnO thin-film transistorsKim, Hee-Joong / Jeong, Chan-Yong / Bae, Sang-Dae / Kwon, Hyuck-In et al. | 2017
-
Soft nanoimprint mold with rigid relief features for improved pattern transferMenahem, Liran / Schvartzman, Mark et al. | 2017
-
Influence of copper nanowires grown in a dielectric layer on the performance of dielectric barrier dischargeHe, Zhao / Liang, Zhihu / Zhang, Xiaoning / Liu, Chunliang et al. | 2017
-
Fabrication and optical behavior of graded-index, moth-eye antireflective structures in CdTeChan, Lesley / Ghoshal, Amitabh / DeCuir, Eric A. / Chen, Yuan Ping / Morse, Daniel E. / Gordon, Michael J. et al. | 2017
-
Comparison of scanning laser annealing and microwave annealing for As+ implanted SiZhao, Zhao / Hilman, Joe / Oropeza, Manny / Nian, Qiong / Alford, Terry L. et al. | 2017
-
Electrical properties related to growth defects in metamorphic GaSb films on SiSasaki, Shun / Dropiewski, Katie / Madisetti, Shailesh / Tokranov, Vadim / Yakimov, Michael / Oktyabrsky, Serge / Bentley, Steven / Galatage, Rohit / Jacob, Ajey P. et al. | 2017
-
Influence of SiH4 and pressure on PECVD preparation of silicon films with subwavelength structuresHernández-Montero, William W. / Zúñiga-Islas, Carlos / Itzmoyotl-Toxqui, Adrián / Molina-Reyes, Joel / Serrano-De la Rosa, Laura E. et al. | 2017
-
Effect of deposition conditions and composition on band offsets in atomic layer deposited HfxSi1−xOy on InGaZnO4Hays, David C. / Gila, Brent P. / Pearton, Stephen J. / Trucco, Andres / Thorpe, Ryan / Ren, Fan et al. | 2017
-
Current relaxation analysis in AlGaN/GaN high electron mobility transistorsPolyakov, Alexander Y. / Smirnov, N. B. / Shchemerov, Ivan V. / Lee, In-Hwan / Jang, Taehoon / Dorofeev, Alexey A. / Gladysheva, Nadezhda B. / Kondratyev, Eugene S. / Turusova, Yulia A. / Zinovyev, Roman A. et al. | 2017
-
Effects of postdeposition annealing on TiO2/GaN/AlGaN/GaN/Si metal-oxide-semiconductor high-electron mobility transistorsLin, Yu-Shyan / Lu, Chi-Che et al. | 2017
-
Transparent and visible light-insensitive acrylic photoresist for negative tone optical lithographyCarbaugh, Daniel J. / Kaya, Savas / Rahman, Faiz et al. | 2017
-
Effect of droplet size, droplet placement, and gas dissolution on throughput and defect rate in UV nanoimprint lithographyJain, Akhilesh / Spann, Andrew / Bonnecaze, Roger T. et al. | 2017
-
Subdiffraction plasmonic lens lithography prototype in stepper modeLiu, Minggang / Zhao, Chengwei / Luo, Yunfei / Zhao, Zeyu / Wang, Yanqin / Gao, Ping / Wang, Changtao / Luo, Xiangang et al. | 2017
-
High resolution TEM analysis of focused ion beam amorphized regions in single crystal silicon—A complementary materials analysis of the teardrop methodDrezner, Yariv / Greenzweig, Yuval / Tan, Shida / Livengood, Richard H. / Raveh, Amir et al. | 2017
-
Enhanced field emission properties from carbon nanotube emitters on the nanopatterned substrateKim, Se Jung / Park, Seol Ah / Kim, Young-Cho / Ju, Byeong-Kwon et al. | 2017
-
Investigations on the long-term performance of gated p-type silicon tip arrays with reproducible and stable field emission behaviorPrommesberger, Christian / Langer, Christoph / Ławrowski, Robert / Schreiner, Rupert et al. | 2017
-
Impact of oxygen plasma on nitrided and annealed atomic layer deposited SiO2/high-k/metal gate for high-voltage input and output fin-shaped field effect transistor devicesSiddiqui, Shahab / Dai, Min / Loesing, Rainer / Kaltalioglu, Erdem / Pandey, Rajan / Sathiyanarayanan, Rajesh / De, Sandip / Raghavan, Srini / Parks, Harold et al. | 2017
-
Synthesis and characterization of Ga2O3 nanosheets on 3C-SiC-on-Si by low pressure chemical vapor depositionRafique, Subrina / Han, Lu / Lee, Jaesung / Zheng, Xu-Qian / Zorman, Christian A. / Feng, Philip X.-L. / Zhao, Hongping et al. | 2017
-
Lithography-free positioned GaAs nanowire growth with focused ion beam implantation of GaDetz, Hermann / Kriz, Martin / Lancaster, Suzanne / MacFarland, Donald / Schinnerl, Markus / Zederbauer, Tobias / Andrews, Aaron Maxwell / Schrenk, Werner / Strasser, Gottfried et al. | 2017
-
Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applicationsKrylov, Igor / Pokroy, Boaz / Ritter, Dan / Eizenberg, Moshe et al. | 2017
-
Volume-expansion polymerization for UV-curable nanoimprintingLuo, Bingqing / Fan, Zengju / Li, Ziping / Chen, Yulong / Tian, Yanqing / Cheng, Xing et al. | 2017
-
Optimization of UV-assisted wet oxidation of GaAsGucmann, Filip / Kúdela, Róbert / Rosová, Alica / Dobročka, Edmund / Mičušík, Matej / Gregušová, Dagmar et al. | 2017
-
Review Article: Molecular beam epitaxy of lattice-matched InAlAs and InGaAs layers on InP (111)A, (111)B, and (110)Yerino, Christopher D. / Liang, Baolai / Huffaker, Diana L. / Simmonds, Paul J. / Lee, Minjoo Larry et al. | 2017