Annealing of dry etch damage in metallized and bare (-201) Ga2O3 (English)
- New search for: Yang, Jiancheng
- New search for: Yang, Jiancheng
- New search for: Ren, Fan
- New search for: Khanna, Rohit
- New search for: Bevlin, Kristen
- New search for: Geerpuram, Dwarakanath
- New search for: Tung, Li-Chun
- New search for: Lin, Jingyu
- New search for: Jiang, Hongxing
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In:
Journal of vacuum science and technology / B
;
35
, 5
;
2017
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ISSN:
- Article (Journal) / Print
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Title:Annealing of dry etch damage in metallized and bare (-201) Ga2O3
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Contributors:Yang, Jiancheng ( author ) / Ren, Fan / Khanna, Rohit / Bevlin, Kristen / Geerpuram, Dwarakanath / Tung, Li-Chun / Lin, Jingyu / Jiang, Hongxing / Lee, Jonathan / Flitsiyan, Elena
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Published in:
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Publisher:
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Place of publication:New York, NY
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Publication date:2017
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ISSN:
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ZDBID:
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DOI:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
- New search for: 51.30 / 50.94 / 53.55 / 53.56
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Source:
Table of contents – Volume 35, Issue 5
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
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Proximity effect correction in electron-beam lithography based on computation of critical-development time with swarm intelligenceNien, Chun / Chang, Li-Cheng / Ye, Jia-Hao / Su, Vin-Cent / Wu, Chao-Hsin / Kuan, Chieh-Hsiung et al. | 2017
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Fabrication of tungsten Fresnel zone plates for hard x-rays using wet etchingTiwari, Pragya / Mondal, Puspen / Srivastava, A. K. / Srivastava, Himanshu / Dhawan, Rajnish / Rai, Sanjay et al. | 2017
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Unexpected validity of Schottky's conjecture for two-stage field emitters: A response via Schwarz–Christoffel transformationMarcelino, Edgar / A. de Assis, Thiago / C. de Castilho, Caio M. et al. | 2017
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Anodic porous alumina with square holes through lattice conversion of naturally occurring ordered structuresKondo, Toshiaki / Miyazaki, Hayato / Yanagishita, Takashi / Masuda, Hideki et al. | 2017
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Bottom profile degradation mechanism in high aspect ratio feature etching based on pattern transfer observationNegishi, Nobuyuki / Miyake, Masatoshi / Yokogawa, Ken'etsu / Oyama, Masatoshi / Kanekiyo, Tadamitsu / Izawa, Masaru et al. | 2017
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Effect of composition in Si1−xGex seed layer on the solid phase crystallization of ultrathin amorphous silicon layerKim, Youngmo / Baek, Seungbeom / Jang, Yongwoon / Park, Jiwoo / Sohn, Hyunchul et al. | 2017
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Enhanced recrystallization and dopant activation of P+ ion-implanted super-thin Ge layers by RF hydrogen plasma treatmentNazarov, Alexei N. / Yukhymchuk, Volodymyr O. / Gomeniuk, Yurii V. / Kryvyi, Sergiy B. / Okholin, Pavel N. / Lytvyn, Petro M. / Kladko, Vasyl P. / Lysenko, Volodymyr S. / Glotov, Volodymyr I. / Golentus, Illya E. et al. | 2017
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ScAlN etch mask for highly selective silicon etchingDavid Henry, Michael / Young, Travis R. / Griffin, Ben et al. | 2017
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Electron beam lithography using fixed beam moving stageKhodadad, Iman / Nelson-Fitzpatrick, Nathan / Burcham, Kevin / Hajian, Arsen / Saini, Simarjeet S. et al. | 2017
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Annealing of dry etch damage in metallized and bare (-201) Ga2O3Yang, Jiancheng / Ren, Fan / Khanna, Rohit / Bevlin, Kristen / Geerpuram, Dwarakanath / Tung, Li-Chun / Lin, Jingyu / Jiang, Hongxing / Lee, Jonathan / Flitsiyan, Elena et al. | 2017
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Nitride etching with hydrofluorocarbons. I. Selective etching of nitride over silicon and oxide materials by gas discharge optimization and selective deposition of fluorocarbon polymerEngelmann, Sebastian U. / Bruce, Robert L. / Joseph, Eric A. / Fuller, Nicholas C. M. / Graham, William S. / Sikorski, Edmund M. / Kohjasteh, Mahmoud / Zhu, Yu / Nakamura, Masahiro / Ito, Azumi et al. | 2017
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In situ resistance measurements during physical vapor deposition of ultrathin metal films on Si(111) at room temperatureLutzer, Bernhard / Bethge, Ole / Zimmermann, Christina / Smoliner, Jürgen / Bertagnolli, Emmerich et al. | 2017
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Influence of different conditions on the electrical performance of amorphous InGaZnO thin-film transistors with HfO2/SiNx stacked dielectricsWang, RuoZheng / Wu, ShengLi / Jia, DongBo / Wei, Qiang / Zhang, JinTao et al. | 2017
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Extracting scaled barrier field from experiments with conducting large-area field emitters: Considerations by inclusion of the dependence between area of emission and the applied fieldA. de Assis, Thiago / P. de Castro, Caio et al. | 2017
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Thermoelectric and optical properties of advanced thermoelectric devices from Ni/Bi2Te3/Ni and Ni/Sb2Te3/Ni thin filmsBudak, Satilmis / Xiao, Zhigang / Cole, Jorden / Price, Dennis / Davis, Tyler / Strong, Tiara / Alim, Mohammad A. et al. | 2017
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Minimizing open-loop piezoactuator nonlinearity artifacts in atomic force microscope measurementsYen, Chi-Fu / Sivasankar, Sanjeevi et al. | 2017
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Review Article: Tunneling-based graphene electronics: Methods and examplesKatkov, Vsevolod L. / Osipov, Vladimir A. et al. | 2017