An improved CMOS-based inductor simulator with simplified structure for low-frequency applications (English)
- New search for: Zhong, Longjie
- New search for: Lai, Xinquan
- New search for: Xu, Donglai
- New search for: Short, Michael
- New search for: Yuan, Bing
- New search for: Wang, Zeyu
- New search for: Zhong, Longjie
- New search for: Lai, Xinquan
- New search for: Xu, Donglai
- New search for: Short, Michael
- New search for: Yuan, Bing
- New search for: Wang, Zeyu
In:
Journal of Computational Electronics
;
15
, 3
; 1017-1022
;
2016
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ISSN:
- Article (Journal) / Print
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Title:An improved CMOS-based inductor simulator with simplified structure for low-frequency applications
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Contributors:Zhong, Longjie ( author ) / Lai, Xinquan ( author ) / Xu, Donglai ( author ) / Short, Michael ( author ) / Yuan, Bing ( author ) / Wang, Zeyu ( author )
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Published in:Journal of Computational Electronics ; 15, 3 ; 1017-1022
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Publisher:
- New search for: Springer US
- New search for: Kluwer Academic Publ.
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Place of publication:Norwell, Mass. [u.a.]
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Publication date:2016
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ISSN:
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ZDBID:
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DOI:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
- New search for: 53.52$jElektronische Schaltungen / 54.76$jComputersimulation / 54.76 / 53.52 / 53.03$jMethoden und Techniken der Elektrotechnik / 53.03
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Keywords:
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Classification:
BKL: 53.52$jElektronische Schaltungen / 54.76$jComputersimulation / 54.76 Computersimulation / 53.52 Elektronische Schaltungen / 53.03$jMethoden und Techniken der Elektrotechnik / 53.03 Methoden und Techniken der Elektrotechnik -
Source:
Table of contents – Volume 15, Issue 3
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 721
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FP-LAPW study of energy bands and optical properties of the filled skutterudite with spin–orbit couplingShankar, A. / Rai, D. P. / Sandeep / Khenata, R. / Ghimire, M. P. / Thapa, R. K. et al. | 2016
- 721
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FP-LAPW study of energy bands and optical properties of the filled skutterudite $$\hbox {CeRu}_{4}\hbox {As}_{12}$$ with spin–orbit couplingShankar, A. / Rai, D. P. / Khenata, R. / Ghimire, M. P. / Thapa, R. K. et al. | 2016
- 721
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FP-LAPW study of energy bands and optical properties of the filled skutterudite Formula Not Shown with spin–orbit couplingShankar, A. / Rai, D. P. / Khenata, R. / Ghimire, M. P. / Thapa, R. K. et al. | 2016
- 729
-
Spectroscopic and structural study of adsorption of benzene on silver using DFTRekha, T. N. / Rajkumar, Beulah J. M. et al. | 2016
- 741
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First-principles simulation of oxygen vacancy migration in Formula Not Shown , Formula Not Shown , and at their interfaces for applications in resistive random-access memoriesBhatti, A. A. / Hsieh, C. C. / Roy, A. / Register, L. F. / Banerjee, S. K. et al. | 2016
- 741
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First-principles simulation of oxygen vacancy migration in , , and at their interfaces for applications in resistive random-access memoriesBhatti, Aqyan A. / Hsieh, Cheng-Chih / Roy, Anupam / Register, Leonard F. / Banerjee, Sanjay K. et al. | 2016
- 741
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First-principles simulation of oxygen vacancy migration in $$\hbox {HfO}_{ x}$$, $$\hbox {CeO}_{ x}$$, and at their interfaces for applications in resistive random-access memoriesBhatti, Aqyan A. / Hsieh, Cheng-Chih / Roy, Anupam / Register, Leonard F. / Banerjee, Sanjay K. et al. | 2016
- 749
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Magnetocaloric effect in NdSi compound: a Monte Carlo simulationMasrour, R. / Jabar, A. et al. | 2016
- 756
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Manipulation of structural and optical behaviors in zincblende and wurtzite mercuric sulfide (HgS) nanocrystals: atomistic tight-binding theorySukkabot, Worasak et al. | 2016
- 763
-
Dual-material double-gate tunnel FET: gate threshold voltage modeling and extractionNoor, Samantha Lubaba / Safa, Samia / Khan, Md. Ziaur Rahman et al. | 2016
- 770
-
Investigation of transient responses of nanoscale transistors by deterministic solution of the time-dependent BTEDi, Shaoyan / Zhao, Kai / Lu, Tiao / Du, Gang / Liu, Xiaoyan et al. | 2016
- 778
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Analysis of independent gate operation in Si nano tube FET and threshold prediction model using 3D numerical simulationAmbika, R. / Srinivasan, R. et al. | 2016
- 787
-
Uncoupled mode space approach for analysis of nanoscale strained junctionless double-gate MOSFETHosseini, Reza et al. | 2016
- 795
-
Role of annealing temperature in the oxide charge distribution in high- -based MOS devices: simulation and experimentBiswas, Debaleen / Chakraborty, Ayan / Chakraborty, Supratic et al. | 2016
- 795
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Role of annealing temperature in the oxide charge distribution in high- Formula Not Shown -based MOS devices: simulation and experimentBiswas, D. / Chakraborty, A. / Chakraborty, S. et al. | 2016
- 795
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Role of annealing temperature in the oxide charge distribution in high-$$\kappa $$-based MOS devices: simulation and experimentBiswas, Debaleen / Chakraborty, Ayan / Chakraborty, Supratic et al. | 2016
- 801
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Optimization of saddle junctionless FETs for extreme high integrationJin, Xiaoshi / Wu, Meile / Liu, Xi / Lee, Jung-Hee / Lee, Jong-Ho et al. | 2016
- 809
-
Microscopic noise simulation of long- and short-channel nMOSFETs by a deterministic approachRuić, Dino / Jungemann, Christoph et al. | 2016
- 820
-
A 3D analytical modeling of tri-gate tunneling field-effect transistorsMarjani, Saeid / Hosseini, Seyed Ebrahim / Faez, Rahim et al. | 2016
- 831
-
Series and parallel resistance effects on the C–V and G–V characteristics of /Si structureRejaiba, Omar / Braña, Alejandro F. / Matoussi, Adel et al. | 2016
- 831
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Series and parallel resistance effects on the C–V and G–V characteristics of Formula Not Shown /Si structureRejaiba, O. / Braña, A. F. / Matoussi, A. et al. | 2016
- 831
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Series and parallel resistance effects on the C–V and G–V characteristics of $$\mathrm{Al}/\mathrm{SiO}_{2}$$/Si structureRejaiba, Omar / Braña, Alejandro F. / Matoussi, Adel et al. | 2016
- 839
-
Drain current multiplication in thin pillar vertical MOSFETs due to depletion isolation and charge couplingHakim, M. M. A. / Groot, C. H. / Hall, S. / Ashburn, Peter et al. | 2016
- 850
-
Analog and RF performance of doping-less tunnel FETs with Formula Not Shown sourceAnand, S. / Sarin, R. K. et al. | 2016
- 850
-
Analog and RF performance of doping-less tunnel FETs with $$\hbox {Si}_{0.55} \hbox {Ge}_{0.45}$$ sourceAnand, Sunny / Sarin, R. K. et al. | 2016
- 850
-
Analog and RF performance of doping-less tunnel FETs with sourceAnand, Sunny / Sarin, R. K. et al. | 2016
- 857
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Delta-doped tunnel FET (D-TFET) to improve current ratio ( ) and ON-current performancePanda, S. / Dash, S. / Behera, S. K. / Mishra, G. P. et al. | 2016
- 857
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Delta-doped tunnel FET (D-TFET) to improve current ratio ( Formula Not Shown ) and ON-current performancePanda, S. / Dash, S. / Behera, S. K. / Mishra, G. P. et al. | 2016
- 857
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Delta-doped tunnel FET (D-TFET) to improve current ratio ($$I_\mathrm{ON}/I_\mathrm{OFF}$$) and ON-current performancePanda, S. / Dash, S. / Behera, S. K. / Mishra, G. P. et al. | 2016
- 865
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Investigation of trigate JLT with dual-k sidewall spacers for enhanced analog/RF FOMsSaini, Gaurav / Choudhary, Sudhanshu et al. | 2016
- 874
-
Strong correlation effects in the (5,5)@(10,10) double-walled carbon nanotubes in the framework of the t–J modelRostampour, E. et al. | 2016
- 881
-
Empirical transport model of strained CNT transistors used for sensor applicationsWagner, Christian / Schuster, Jörg / Gessner, Thomas et al. | 2016
- 891
-
Tuning electronic transport of zigzag graphene nanoribbons by ordered B or N atom dopingWang, Lihua / Zhang, Zizhen / Zhao, Jianguo / Ding, Bingjun / Guo, Yong et al. | 2016
- 898
-
Sensitive DNA detection based on the capacitance properties of grapheneKhadempar, Nahid / Alipour, Hashem / Berahman, Masoud / Yazdan panah gohar rizi, Arash / Jabbari, Masoud et al. | 2016
- 910
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Erratum to: Sensitive DNA detection based on the capacitance properties of grapheneKhadempar, Nahid / Alipour, Hashem / Berahman, Masoud / Goharrizi, Arash Yazdanpanah / Jabbari, Masoud et al. | 2016
- 911
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Prior knowledge input neural network method for GFET descriptionZhang, Ji / Lv, Yawei / Chang, Sheng / Wang, Hao / He, Jin / Huang, Qijun et al. | 2016
- 919
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Performance analysis of uniaxially strained monolayer black phosphorus and blue phosphorus n-MOSFET and p-MOSFETBanerjee, L. / Mukhopadhyay, A. / Sengupta, A. / Rahaman, H. et al. | 2016
- 931
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Energy gap renormalization and diamagnetic susceptibility in quantum wires with different cross-sectional shapeAvazzadeh, Z. / Khordad, R. / Bahramiyan, H. / Mohammadi, S. A. et al. | 2016
- 939
-
A review of recent advances in the spherical harmonics expansion method for semiconductor device simulationRupp, K. / Jungemann, C. / Hong, S.-M. / Bina, M. / Grasser, T. / Jüngel, A. et al. | 2016
- 959
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Joint defect- and variation-aware logic mapping of multi-outputs crossbar-based nanoarchitecturesGhavami, Behnam et al. | 2016
- 968
-
High-performance multiplexer architecture for quantum-dot cellular automataRashidi, Hamid / Rezai, Abdalhossein / Soltany, Sheema et al. | 2016
- 982
-
Simultaneous all-optical basic arithmetic operations using QD-SOA-assisted Mach–Zehnder interferometerGayen, Dilip Kumar / Chattopadhyay, Tanay et al. | 2016
- 993
-
On-printed circuit board emulator with controllability of pinched hysteresis loop for nanoscale thin-film memristor deviceNguyen, Van Ha / Sohn, Keun Yong / Song, Hanjung et al. | 2016
- 993
-
On-printed circuit board emulator with controllability of pinched hysteresis loop for nanoscale Formula Not Shown thin-film memristor deviceNguyen, V. H. / Sohn, K. Y. / Song, H. et al. | 2016
- 993
-
On-printed circuit board emulator with controllability of pinched hysteresis loop for nanoscale $$\mathrm{TiO}_2$$ thin-film memristor deviceNguyen, Van Ha / Sohn, Keun Yong / Song, Hanjung et al. | 2016
- 1003
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Evaluation of a transfer function model using experimental data and numerical analysis: the case of a pyroelectric sensorSifi, Nejmeddine / Jridi, Ahmed / Touayar, Oualid et al. | 2016
- 1017
-
An improved CMOS-based inductor simulator with simplified structure for low-frequency applicationsZhong, Longjie / Lai, Xinquan / Xu, Donglai / Short, Michael / Yuan, Bing / Wang, Zeyu et al. | 2016
- 1023
-
Utilization of double metal–dielectric composite substrates for microwave miniaturization of rectangular patch antennasRybin, Oleg / Shulga, Sergey et al. | 2016
- 1028
-
Performance evaluation of micromachined fabricated multiband horn-shaped slotted patch antennaArora, Rajat / Rana, Shashi B. / Arya, Sandeep / Khan, Saleem et al. | 2016
- 1040
-
Comparative performance analysis of InGaN/GaN multi-quantum-well light-emitting diodes with p- and n-type step-doped barriersSingh, Sumitra / Utpalla, Pranav / Pal, Suchandan / Dhanavantri, Chenna et al. | 2016
- 1046
-
Design of ultrafast all-optical pulsed-mode 2 Formula Not Shown 2 crossbar switch using quantum-dot semiconductor optical amplifier-based Mach–Zehnder interferometerKastritsis, D. / Zoiros, K. E. / Dimitriadou, E. et al. | 2016
- 1046
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Design of ultrafast all-optical pulsed-mode 2 2 crossbar switch using quantum-dot semiconductor optical amplifier-based Mach–Zehnder interferometerKastritsis, Dimitris / Zoiros, Kyriakos E. / Dimitriadou, Evangelia et al. | 2016
- 1046
-
Design of ultrafast all-optical pulsed-mode 2 $$\times $$ 2 crossbar switch using quantum-dot semiconductor optical amplifier-based Mach–Zehnder interferometerKastritsis, Dimitris / Zoiros, Kyriakos E. / Dimitriadou, Evangelia et al. | 2016
- 1064
-
An optical absorption model including absorber saturationAuf der Maur, Matthias / Gentilini, Desiree / Di Carlo, Aldo / Cha, Seung-Il / Lee, Dong Yoon et al. | 2016
- 1071
-
A novel laminated gate to improve the ON-state resistance of LDMOS transistorsPak, Amin / Orouji, Ali A. et al. | 2016
- 1077
-
Novel 4H-SiC MESFET with modified depletion region by dual well for high-current applicationsOrouji, Ali A. / Roustaie, Zohreh / Ramezani, Zeinab et al. | 2016
- 1085
-
Analysis of external quantum efficiency and conversion efficiency of thin crystalline silicon solar cells with textured front surfaceBougoffa, Amira / Trabelsi, Abdessalem / Zouari, Abdelaziz / Dhahri, Essebti et al. | 2016
- 1095
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Simplified numerical simulation of organic photovoltaic devicesKim, Chang-Hyun / Choi, Jinwoo / Bonnassieux, Yvan / Horowitz, Gilles et al. | 2016
- 1103
-
A Gaussian model for recombination via carrier-trap distributions in organic solar cellsHernández-García, L. F. / Ramírez-Sánchez, O. / Cabrera-Arenas, V. / Reséndiz-Mendoza, L. M. et al. | 2016
- 1110
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Effect of mobility and band structure of hole transport layer in planar heterojunction perovskite solar cells using 2D TCAD simulationAlnuaimi, Aaesha / Almansouri, Ibraheem / Nayfeh, Ammar et al. | 2016