Performance investigation of 120 Gb/s all-optical logic XOR gate using dual-reflective semiconductor optical amplifier-based scheme (English)
- New search for: Kotb, Amer
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- https://orcid.org/0000-0002-3776-822X
- New search for: Zoiros, Kyriakos E.
- New search for: Guo, Chunlei
- New search for: Kotb, Amer
- Further information on Kotb, Amer:
- https://orcid.org/0000-0002-3776-822X
- New search for: Zoiros, Kyriakos E.
- New search for: Guo, Chunlei
In:
Journal of Computational Electronics
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17
, 4
; 1640-1649
;
2018
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ISSN:
- Article (Journal) / Print
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Title:Performance investigation of 120 Gb/s all-optical logic XOR gate using dual-reflective semiconductor optical amplifier-based scheme
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Contributors:
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Published in:Journal of Computational Electronics ; 17, 4 ; 1640-1649
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Publisher:
- New search for: Springer US
- New search for: Kluwer Academic Publ.
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Place of publication:Norwell, Mass. [u.a.]
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Publication date:2018
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ISSN:
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ZDBID:
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DOI:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
- New search for: 53.52$jElektronische Schaltungen / 54.76$jComputersimulation / 54.76 / 53.52 / 53.03$jMethoden und Techniken der Elektrotechnik / 53.03
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Keywords:
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Classification:
BKL: 53.52$jElektronische Schaltungen / 54.76$jComputersimulation / 54.76 Computersimulation / 53.52 Elektronische Schaltungen / 53.03$jMethoden und Techniken der Elektrotechnik / 53.03 Methoden und Techniken der Elektrotechnik -
Source:
Table of contents – Volume 17, Issue 4
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1399
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Efficient ab initio analysis of quantum confinement and band structure effects in ultra-scaled Si1−x Ge x gate-all-around and fin field-effect transistors for sub-10 nm technology nodesLiu, Jie / Tang, Chuanxiang / Mo, Pinghui / Lu, Jiwu et al. | 2018
- 1410
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First-principles study of efficient phenothiazine-based D–π–A organic sensitizers with various spacers for DSSCsArunkumar, A. / Shanavas, S. / Anbarasan, P. M. et al. | 2018
- 1421
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Quantum chemical investigation on molecular structure, vibrational, photophysical and nonlinear optical properties of l-threoninium picrate: an admirable contender for nonlinear applicationsAlFaify, S. / Shkir, Mohd. / Arora, M. / Irfan, Ahmad / Algarni, H. / Abbas, Haider / Al-Sehemi, Abdullah G. et al. | 2018
- 1434
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Atomistic tight-binding theory for acceptor states (C, Be, Mg, Zn, Si and Cd) of GaAs nanocrystalsSukkabot, Worasak et al. | 2018
- 1441
-
First principles study of structural and electronic properties of BNNTsMovlarooy, Tayebeh / Minaie, Babak et al. | 2018
- 1450
-
First-principles calculations on phase transformation and elastic properties of CuO under pressureYao, Bixia / Zhou, Xiaolong / Liu, Manmen / Yu, Jie / Cao, Jianchun / Wang, Lihui et al. | 2018
- 1457
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Computational characterization of a-Si:H/c-Si interfacesCzaja, Philippe / Giusepponi, Simone / Gusso, Michele / Celino, Massimo / Aeberhard, Urs et al. | 2018
- 1470
-
Investigation on the structural, elastic, electronic, and magnetic properties of half-metallic and CoMnIrSi via first-principles calculationsHoat, D. M. / Rivas-Silva, J. F. / Méndez Blas, Antonio et al. | 2018
- 1470
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Investigation on the structural, elastic, electronic, and magnetic properties of half-metallic $$\hbox {Co}_{2}\hbox {MnSi}$$ and CoMnIrSi via first-principles calculationsHoat, D. M. / Rivas-Silva, J. F. / Méndez Blas, Antonio et al. | 2018
- 1478
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A first-principles study of the structural, elastic, electronic, vibrational, and optical properties of BaSe1−x Te xKhalfallah, Bouhafs / Driss-Khodja, Fatima-Zohra / Saadaoui, Fatiha / Driss-Khodja, Mohammed / Boudali, Abdelkader / Bendaoud, Hanifi / Bouhafs, Bachir et al. | 2018
- 1492
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The backward Monte Carlo method for semiconductor device simulationKampl, Markus / Kosina, Hans et al. | 2018
- 1505
-
Theoretical analysis of band alignment and charge carriers migration in mixed-phase TiO2 systemsMorgade, Cecilia I. N. / Castellani, Norberto J. / Cabeza, Gabriela F. et al. | 2018
- 1515
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A tetracene-based single-electron transistor as a chlorine sensorJain, Barsha / Vinod Kumar, K. / SanthiBhushan, B. / Gaurav, Kumar / Pattanaik, Manisha / Srivastava, Anurag et al. | 2018
- 1521
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Impact of channel length, gate insulator thickness, gate insulator material, and temperature on the performance of nanoscale FETsSaha, Jibesh K. / Chakma, Nitish / Hasan, Mehedhi et al. | 2018
- 1528
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Electrostatically doped tunnel CNTFET model for low-power VLSI circuit designBala, Shashi / Khosla, Mamta et al. | 2018
- 1536
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Analysis of a temperature-dependent delay optimization model for GNR interconnects using a wire sizing methodBhattacharya, Sandip / Das, Subhajit / Mukhopadhyay, Arnab / Das, Debaprasad / Rahaman, Hafizur et al. | 2018
- 1549
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A quantum kinetic approach for calculating low-field mobility in black phosphorus crystals and multilayer phosphoreneKovalenko, K. L. / Kozlovskiy, S. I. / Sharan, N. N. et al. | 2018
- 1557
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A compact interband tunneling current model for Gate-on-Source/Channel SOI-TFETsMitra, Suman Kr. / Bhowmick, Brinda et al. | 2018
- 1567
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Fringing-field-based 2-D analytical model for a gate-underlap double-gate TFETPaul, Dip Joti / Abdullah-Al-Kaiser, Md. / Islam, Md. Shofiqul / Khosru, Quazi D. M. et al. | 2018
- 1578
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Updated structure of vertical double-diffused MOSFETs for irradiation hardening against single eventsTang, Zhaohuan / Li, Xingji / Tan, Kaizhou / Liu, Chaoming / Fu, Xinghua et al. | 2018
- 1584
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High-blocking-voltage UMOSFETs with reformed electric field distributionAbbasi, Elham / Orouji, Ali A. et al. | 2018
- 1596
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EMA-based modeling of the surface potential and drain current of dual-material gate-all-around TFETsMishra, Varun / Verma, Yogesh Kumar / Verma, Prateek Kishor / Gupta, Santosh Kumar et al. | 2018
- 1603
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Strain effects on the DC performance of single-layer TMD-based double-gate field-effect transistorsHosseini, Manouchehr / Karami, Hamidreza et al. | 2018
- 1608
-
3D numerical simulations of single-event transient effects in SOI FinFETsWu, Zhenyu / Zhu, Benneng / Yi, Tengyue / Li, Chao / Liu, Yi / Yang, Yintang et al. | 2018
- 1615
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A semiphysical current–voltage model with a contact ideality factor for disordered thin-film transistorsLee, Sungsik et al. | 2018
- 1621
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Moving mesh adaptation for Si and GaN-based power device simulationIsmail, Fawad / Sarker, Palash / Mohamed, Mohamed / Kim, Kyekyoon / Ravaioli, Umberto et al. | 2018
- 1630
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Million-atom tight-binding modeling of non-polar a-plane InGaN light emittersNishat, Md Rezaul Karim / Taher, Mayada M. / Ahmed, Shaikh S. et al. | 2018
- 1640
-
Performance investigation of 120 Gb/s all-optical logic XOR gate using dual-reflective semiconductor optical amplifier-based schemeKotb, Amer / Zoiros, Kyriakos E. / Guo, Chunlei et al. | 2018
- 1650
-
Analog/RF characteristics of a 3D-Cyl underlap GAA-TFET based on a Ge source using fringing-field engineering for low-power applicationsBeohar, Ankur / Yadav, Nandakishor / Shah, Ambika Prasad / Vishvakarma, Santosh Kumar et al. | 2018
- 1658
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Computational study of Fermi kinetics transport applied to large-signal RF device simulationsMiller, Nicholas C. / Grupen, Matt / Beckwith, Kris / Smithe, David / Albrecht, John D. et al. | 2018
- 1676
-
Mathematical aspects of simulating efficient RF operation of HEMTsGarber, Gennadiy Z. et al. | 2018
- 1685
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Practical design of the voltage controllable quadrature oscillator for operation in MHz bands employing new behavioral model of variable-voltage-gain current conveyor of second generationSotner, Roman / Polak, Ladislav / Petrzela, Jiri / Langhammer, Lukas et al. | 2018
- 1695
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Electro-thermal RF modeling and performance analysis of graphene nanoribbon interconnectsDas, Subhajit / Das, Debaprasad / Rahaman, Hafizur et al. | 2018
- 1709
-
Reduction of electromagnetic interference in HF circuits by improving the effectiveness of shielding structuresNouainia, Ahmed / Hajji, Mohamed / Aguili, Taoufik et al. | 2018
- 1721
-
Design of highly directive terahertz photoconductive dipole antenna using frequency-selective surface for sensing and imaging applicationsMalhotra, Isha / Jha, Kumud Ranjan / Singh, G. et al. | 2018
- 1741
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Design of a printed symmetrical CPW-fed monopole antenna for on-body medical diagnosis applicationsKumar, Avinash / Badhai, Ritesh Kumar / Suraj, Priyadarshi et al. | 2018
- 1748
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A dual band rectifying antenna for RF energy harvestingSingh, Neeta / Kanaujia, Binod K. / Beg, Mirza Tariq / Mainuddin / Kumar, Sachin / Khandelwal, Mukesh K. et al. | 2018
- 1756
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On the design methodology of Boolean functions with quantum-dot cellular automata for reducing delay and number of wire crossingsTahmasebi, Masoumeh / Faghih Mirzaee, Reza / Pishgar Komleh, Seyyed Hossein et al. | 2018
- 1771
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Novel circuit design of serial–parallel multiplier in quantum-dot cellular automata technologyEdrisi Arani, Iman / Rezai, Abdalhossein et al. | 2018
- 1780
-
Analytical modeling and simulation of MEMS piezoresistive pressure sensors with a square silicon carbide diaphragm as the primary sensing element under different loading conditionsJindal, Sumit Kumar / Magam, Sai Pratyusha / Shaklya, Maitreyi et al. | 2018
- 1790
-
Ion shot noise in Hodgkin–Huxley neuronsVasallo, Beatriz G. / Mateos, Javier / González, Tomás et al. | 2018
- 1797
-
Impact of triple-material gate and highly doped source/drain extensions on sensitivity of DNA biosensorsOuarghi, M. / Dibi, Z. / Hedjazi, N. et al. | 2018
- 1807
-
Ultralow-power dielectric-modulated nanogap-embedded sub-20-nm TGRC-MOSFET for biosensing applicationsKumar, Ajay / Tripathi, M. M. / Chaujar, Rishu et al. | 2018
- 1816
-
Theoretical investigations on newly designed triphenylamine-based donors applied into the D–π–A and D–A–π–A type sensitizersSong, Yanlin / Lu, Xiaofang / Sheng, Yang / Zhao, Guorui / Wang, Guangying / Geng, Zhiyuan et al. | 2018