A micromachined, shadow-mask technology for the OMVPE fabrication of integrated optical structures (English)
- New search for: Peake, G. M.
- New search for: Zhang, L.
- New search for: Li, N. Y.
- New search for: Sarangan, A. M.
- New search for: Willison, C. G.
- New search for: Shul, R. J.
- New search for: Hersee, S. D.
- New search for: Peake, G. M.
- New search for: Zhang, L.
- New search for: Li, N. Y.
- New search for: Sarangan, A. M.
- New search for: Willison, C. G.
- New search for: Shul, R. J.
- New search for: Hersee, S. D.
In:
Journal of Electronic Materials
;
29
, 1
; 86-90
;
2000
-
ISSN:
- Article (Journal) / Print
-
Title:A micromachined, shadow-mask technology for the OMVPE fabrication of integrated optical structures
-
Contributors:Peake, G. M. ( author ) / Zhang, L. ( author ) / Li, N. Y. ( author ) / Sarangan, A. M. ( author ) / Willison, C. G. ( author ) / Shul, R. J. ( author ) / Hersee, S. D. ( author )
-
Published in:Journal of Electronic Materials ; 29, 1 ; 86-90
-
Publisher:
- New search for: Springer-Verlag
- New search for: TMS
-
Place of publication:Warrendale, Pa.
-
Publication date:2000
-
ISSN:
-
ZDBID:
-
DOI:
-
Type of media:Article (Journal)
-
Type of material:Print
-
Language:English
- New search for: 51.40 / 33.61 / 51.10 / 53.09
- Further information on Basic classification
- New search for: 770/5670
-
Keywords:
-
Classification:
-
Source:
Table of contents – Volume 29, Issue 1
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
-
ForewordBiefeld, Robert M. / Wang, Christine A. et al. | 2000
- 2
-
Model development of GaN MOVPE growth chemistry for reactor designSun, Jingxi / Redwing, J. M. / Kuech, T. F. et al. | 2000
- 10
-
InGaN/GaN quantum well growth on pyramids of epitaxial lateral overgrown GaNZhang, X. / Dapkus, P. D. / Rich, D. H. / Kim, I. / Kobayashi, J. T. / Kobayashi, N. P. et al. | 2000
- 15
-
SIMS investigations into the effect of growth conditions on residual impurity and silicon incorporation in GaN and $ Al_{x} $$ Ga_{1−x} $NParish, G. / Keller, S. / Denbaars, S. P. / Mishra, U. K. et al. | 2000
- 21
-
The influence of OMVPE growth pressure on the morphology, compensation, and doping of GaN and related alloysWickenden, A. E. / Koleske, D. D. / Henry, R. L. / Gorman, R. J. / Twigg, M. E. / Fatemi, M. / Freitas, J. A. / Moore, W. J. et al. | 2000
- 27
-
The hall mobility and its relationship with persistent photoconductivity of undoped GaNWang, W. / Chua, S. J. / Li, G. et al. | 2000
- 31
-
Characterization of undoped and silicon-doped InGaN/GaN single quantum wellsSchineller, B. / Lim, P. H. / Yablonskii, G. P. / Lutsenko, E. V. / Schön, O. / Protzmann, H. / Heuken, M. / Heime, K. et al. | 2000
- 37
-
Migration effect on semiconductor surface for narrow-stripe selective MOVPESakata, Y. / Komatsu, K. et al. | 2000
- 42
-
MOVPE grown $ Ga_{1−x} $$ In_{x} $As solar cells for GaInP/GaInAs tandem applicationsDimroth, F. / Lanyi, P. / Schubert, U. / Bett, A. W. et al. | 2000
- 47
-
High C-doping of MOVPE grown thin $ Al_{x} $$ Ga_{1−x} $As layers for AlGaAs/GaAs interband tunneling devicesDimroth, F. / Schubert, U. / Schienle, F. / Bett, A. W. et al. | 2000
- 53
-
Optimization of GaAsP/AlGaAs-based QW laser structures for high power 800 nm operationKnauer, A. / Bugge, F. / Erbert, G. / Wenzel, H. / Vogel, K. / Zeimer, U. / Weyers, M. et al. | 2000
- 57
-
MOVPE growth of AlGaAs/GaInP diode lasersBugge, F. / Knauer, A. / Gramlich, S. / Rechenberg, I. / Beister, G. / Sebastian, J. / Wenzel, H. / Erbert, G. / Weyers, M. et al. | 2000
- 62
-
Impact of growth rate on the quality of ZNS-MQW InGaAsP/InP laser structures grown by LP-MOVPEDe Carvalho, Wilson / Tosi Furtado, Mario / André Bernussi, Aryton / Luiz Gobbi, Angelo / Alonso Cotta, Mônica et al. | 2000
- 69
-
Ultraviolet detectors based on epitaxial ZnO films grown by MOCVDLiu, Y. / Gorla, C. R. / Liang, S. / Emanetoglu, N. / Lu, Y. / Shen, H. / Wraback, M. et al. | 2000
- 75
-
Optimization of emitter cap growth conditions for InGaP/GaAs HBTs with high current gain by LP-MOCVDYang, Q. / Scott, D. / Chung, T. / Stillman, G. E. et al. | 2000
- 80
-
(Al)GaInP multiquantum well LEDs on GaAs and GeModak, P. / D’Hondt, M. / Mijlemans, P. / Moerman, I. / van Daele, P. / Demeester, P. et al. | 2000
- 86
-
A micromachined, shadow-mask technology for the OMVPE fabrication of integrated optical structuresPeake, G. M. / Zhang, L. / Li, N. Y. / Sarangan, A. M. / Willison, C. G. / Shul, R. J. / Hersee, S. D. et al. | 2000
- 91
-
Exploring new active regions for type I InAsSb strained-layer lasersBiefeld, R. M. / Phillips, J. D. / Kurtz, S. R. et al. | 2000
- 94
-
MOVPE growth of (Al, Ga)InP-based laser structures monitored by real-time reflectance anisotropy spectroscopyHaberland, K. / Bhattacharya, A. / Zorn, M. / Weyers, M. / Zettler, J. -T. / Richter, W. et al. | 2000
- 99
-
GaAs high temperature optical constants and application to optical monitoring within the MOVPE environmentAllwood, D. A. / Klipstein, P. C. / Mason, N. J. / Nicholas, R. J. / Walker, P. J. et al. | 2000
- 106
-
Real-time optical techniques and QMS to characterize growth in a modified commercial OMVPE reactorBell, K. A. / Ebert, M. / Yoo, S. D. / Flock, K. / Aspnes, D. E. et al. | 2000
- 112
-
Step structure of GaInAsSb grown by organometallic vapor phase epitaxyWang, C. A. et al. | 2000
- 118
-
Effects of substrate orientation and surface reconstruction on patterned substrate OMVPE of GaAsReichert, W. / Cohen, R. M. et al. | 2000
- 129
-
Effect of MOVPE growth interruptions on the gallium arsenide interior interface morphologyBernatz, Georg / Nau, Siegfried / Rettig, Rasmus / Stolz, Wolfgang et al. | 2000
- 134
-
Surfactant effects of dopants on ordering in GaInPStringfellow, G. B. / Lee, R. T. / Fetzer, C. M. / Shurtleff, J. K. / Hsu, Yu / Jun, S. W. / Lee, S. / Seong, T. Y. et al. | 2000
- 140
-
Selective incorporation of Si along step edges during delta-doping on MOVPE-grown GaAs (001) vicinal surfacesMotohisa, Junichi / Tazaki, Chiharu / Irisawa, Tomoki / Akabori, Masashi / Fukui, Takashi et al. | 2000
- 146
-
A comparison of TMG with TEG for the growth of $ In_{x} $$ Ga_{1−x} $AsGlew, Richard William / Grim-Bogdan, Karen / Tzafaras, Nikolaos / Nakahara, Shohei et al. | 2000
- 151
-
Next generation adduct purification techniques for low oxygen content metal alkylsCoward, K. M. / Jones, A. C. / Pemble, M. E. / Rushworth, S. A. / Smith, L. M. / Martin, T. et al. | 2000
- 156
-
Properties of solution TMI as an OMVPE sourceRavetz, M. S. / Smith, L. M. / Rushworth, S. A. / Leese, A. B. / Kanjolia, R. / Davies, J. I. / Blunt, R. T. et al. | 2000
- 161
-
1,1-Dimethylhydrazine as a high purity nitrogen source for MOVPE-water reduction and quantification using nuclear magnetic resonance, gas chromatography-atomic emission detection spectroscopy and cryogenic-mass spectroscopy analytical techniquesOdedra, R. / Smith, L. M. / Rushworth, S. A. / Ravetz, M. S. / Clegg, J. / Kanjolia, R. / Irvine, S. J. C. / Ahmed, M. U. / Bourret-Courchesne, E. D. / Li, N. Y. et al. | 2000
- 165
-
Optical characterization of (GaIn)(NAs)/GaAs MQW structuresKoch, J. / Höhnsdorf, F. / Stolz, W. et al. | 2000
- 169
-
In-situ post annealing treatment of nitrogen-doped ZnSe grown using photo-assisted MOVPEAhmed, M. U. / Irvine, S. J. C. et al. | 2000
- 173
-
Growth and photoluminescence study of ZnSe quantum dotsChang, Y. H. / Chieng, M. H. / Tsai, C. C. / Harris Liao, M. C. / Chen, Y. F. et al. | 2000
- L1
-
Thermoelectric quantum-dot superlattices with high ZTHarman, T. C. / Taylor, P. J. / Spears, D. L. / Walsh, M. P. et al. | 2000