1/f noise in large-area $ Hg_{1−x} $$ Cd_{x} $Te photodiodes (English)
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In:
Journal of Electronic Materials
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32
, 7
; 633-638
;
2003
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ISSN:
- Article (Journal) / Print
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Title:1/f noise in large-area $ Hg_{1−x} $$ Cd_{x} $Te photodiodes
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Contributors:D’Souza, A. I. ( author ) / Stapelbroek, M. G. ( author ) / Dolan, P. N. ( author ) / Wijewarnasuriya, P. S. ( author ) / DeWames, R. E. ( author ) / Smith, D. S. ( author ) / Ehlert, J. C. ( author )
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Published in:Journal of Electronic Materials ; 32, 7 ; 633-638
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Publisher:
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- New search for: TMS
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Place of publication:Warrendale, Pa.
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Publication date:2003
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ISSN:
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ZDBID:
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DOI:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
- New search for: 51.40 / 33.61 / 51.10 / 53.09
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Source:
Table of contents – Volume 32, Issue 7
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 587
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ForewordSivananthan, S. / Dhar, N. K. et al. | 2003
- 588
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Impact of critical processes on HgCdTe diode performance and yieldFiggemeier, Heinrich / Bruder, Martin / Mahlein, Karl-Martin / Wollrab, Richard / Ziegler, Johann et al. | 2003
- 592
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Recent developments of high-complexity HgCdTe focal plane arrays at leti infrared laboratoryDestéfanis, G. / Astier, A. / Baylet, J. / Castelein, P. / Chamonal, J. P. / DeBorniol, E. / Gravand, O. / Marion, F. / Martin, J. L. / Million, A. et al. | 2003
- 602
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HgCdTe molecular beam epitaxy material for microcavity light emitters: Application to gas detection in the 2–6 µm rangeZanatta, J. P. / Noël, F. / Ballet, P. / Hdadach, N. / Million, A. / Destefanis, G. / Mottin, E. / Kopp, C. / Picard, E. / Hadji, E. et al. | 2003
- 608
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Far-infrared detector based on HgTe/HgCdTe superlatticesZhou, Y. D. / Becker, C. R. / Selamet, Y. / Chang, Y. / Ashokan, R. / Boreiko, R. T. / Aoki, T. / Smith, David J. / Betz, A. L. / Sivananthan, S. et al. | 2003
- 615
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HgCdTe long-wavelength infrared photovoltaic detectors fabricated using plasma-induced junction formation technologyNguyen, T. / Musca, C. A. / Dell, J. M. / Antoszewski, J. / Faraone, L. et al. | 2003
- 622
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Planar p-on-n HgCdTe heterojunction mid-wavelength infrared photodiodes formed using plasma-induced junction isolationMusca, C. A. / Antoszewski, J. / Dell, J. M. / Faraone, L. / Terterian, S. et al. | 2003
- 627
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Small two-dimensional arrays of mid-wavelength infrared HgCdTe diodes fabricated by reactive ion etching-induced p-to-n-type conversionAntoszewski, J. / Musca, C. A. / Dell, J. M. / Faraone, L. et al. | 2003
- 633
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1/f noise in large-area Hg1−xCdxTe photodiodesD’Souza, A. I. / Stapelbroek, M. G. / Dolan, P. N. / Wijewarnasuriya, P. S. / DeWames, R. E. / Smith, D. S. / Ehlert, J. C. et al. | 2003
- 639
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Minority carrier lifetime and noise in abrupt molecular-beam epitaxy-grown HgCdTe heterostructuresSewell, R. / Musca, C. A. / Dell, J. M. / Faraone, L. / Józwikowski, K. / Rogalski, A. et al. | 2003
- 646
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Optical absorption properties of HgCdTe epilayers with uniform compositionMoazzami, K. / Liao, D. / Phillips, J. D. / Lee, D. L. / Carmody, M. / Zandian, M. / Edwall, D. D. et al. | 2003
- 651
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Midwave-infrared negative luminescence properties of HgCdTe devices on silicon substratesBewley, W. W. / Lindle, J. R. / Vurgaftman, I. / Meyer, J. R. / Varesi, J. B. / Johnson, S. M. et al. | 2003
- 656
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Metal-organic vapor-phase epitaxial growth of HgCdTe device heterostructures on three-inch-diameter substratesMaxey, C. D. / Camplin, J. P. / Guilfoy, I. T. / Gardner, J. / Lockett, R. A. / Jones, C. L. / Capper, P. / Houlton, M. / Gordon, N. T. et al. | 2003
- 661
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Performance of molecular-beam epitaxy-grown midwave infrared HgCdTe detectors on four-inch Si substrates and the impact of defectsVaresi, J. B. / Buell, A. A. / Peterson, J. M. / Bornfreund, R. E. / Vilela, M. F. / Radford, W. A. / Johnson, S. M. et al. | 2003
- 667
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Novel HgxCd1−xTe device structure for higher operating temperature detectorsAshby, M. K. / Gordon, N. T. / Elliott, C. T. / Jones, C. L. / Maxey, C. D. / Hipwood, L. / Catchpole, R. et al. | 2003
- 672
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Stacked multijunction photodetectors of long-wavelength radiationPiotrowski, J. / Brzozowski, P. / Jóźwikowski, K. et al. | 2003
- 677
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Low-energy electron-enhanced etching of HgCdTeKim, Jaehwa / Koga, T. S. / Gillis, H. P. / Goorsky, Mark S. / Garwood, Gerald A. / Varesi, John B. / Rhiger, David R. / Johnson, Scott M. et al. | 2003
- 686
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Lithography factors that determine the aspect ratio of electron cyclotron resonance plasma etched HgCdTe trenchesBenson, J. D. / Stoltz, A. J. / Boyd, P. R. / Martinka, M. / Varesi, J. B. / Almeida, L. A. / Olver, K. A. / Kaleczyc, A. W. / Johnson, S. M. / Radford, W. A. et al. | 2003
- 692
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The effect of electron cyclotron resonance plasma parameters on the aspect ratio of trenches in HgCdTeStoltz, A. J. / Benson, J. D. / Boyd, P. R. / Martinka, M. / Varesi, J. B. / Kaleczyc, A. W. / Smith, E. P. G. / Johnson, S. M. / Radford, W. A. / Dinan, J. H. et al. | 2003
- 698
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Time relaxation of point defects in p- and n-(HgCd)Te after ion millingBelas, E. / Bogoboyashchyy, V. V. / Grill, R. / Izhnin, I. I. / Vlasov, A. P. / Yudenkov, V. A. et al. | 2003
- 703
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Electron microscopy of surface-crater defects on HgCdTe/CdZnTe(211)B epilayers grown by molecular-beam epitaxyAoki, T. / Chang, Y. / Badano, G. / Zhao, J. / Grein, C. / Sivananthan, S. / Smith, David J. et al. | 2003
- 710
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Threading and misfit-dislocation motion in molecular-beam epitaxy-grown HgCdTe epilayersCarmody, M. / Lee, D. / Zandian, M. / Phillips, J. / Arias, J. et al. | 2003
- 717
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Nucleation of ZnTe/CdTe epitaxy on high-miller-index Si surfacesBrill, G. / Chen, Y. / Dhar, N. K. / Singh, R. et al. | 2003
- 723
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Molecular-beam epitaxial growth of CdSexTe1−x on Si(211)Chen, Y. P. / Brill, G. / Dhar, N. K. et al. | 2003
- 728
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Metal-organic vapor-phase epitaxy growth and characterization of thick (100) CdTe layers on (100) GaAs and (100) GaAs/Si substratesNiraula, M. / Yasuda, K. / Ishiguro, T. / Kawauchi, Y. / Morishita, H. / Agata, Y. et al. | 2003
- 733
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Optical properties of CdSe quantum dots grown on ZnSe and ZnBeSe by molecular beam epitaxyZhou, X. / Tamargo, M. C. / Guo, S. P. / Chen, Y. C. et al. | 2003
- 737
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Luminescence study of ZnTe:Cr epilayers grown by molecular-beam epitaxyLuo, Ming / Vanmil, B. L. / Tompkins, R. P. / Cui, Y. / Mounts, T. / Roy, U. N. / Burger, A. / Myers, T. H. / Giles, N. C. et al. | 2003
- 742
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The indices of refraction of molecular-beam epitaxy-grown BexZn1−xTe ternary alloysPeiris, F. C. / Buckley, M. R. / Maksimov, O. / Munoz, M. / Tamargo, M. C. et al. | 2003
- 747
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Photoluminescence of CdTe crystals grown by physical-vapor transportPalosz, W. / Grasza, K. / Boyd, P. R. / Cui, Y. / Wright, G. / Roy, U. N. / Burger, A. et al. | 2003
- 752
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Electrical properties of CdTe near the melting pointBelas, E. / Grill, R. / Franc, J. / Turjanska, L. / Turkevych, I. / Moravec, P. / Höschl, P. et al. | 2003
- 756
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Characterization of large single-crystal gamma-ray detectors of cadmium zinc tellurideBurger, A. / Groza, M. / Cui, Y. / Hillman, D. / Brewer, E. / Bilikiss, A. / Wright, G. W. / Li, L. / Lu, F. / James, R. B. et al. | 2003
- 761
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Development of inclusion-free CdZnTe substrates from crystals grown by the vertical-gradient freeze methodFranc, J. / Moravec, P. / Hlídek, P. / Belas, E. / Höschl, P. / Grill, R. / Šourek, Z. et al. | 2003
- 766
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Thermal diffusion of lithium acceptors into ZnO crystalsGarces, N. Y. / Wang, Lijun / Giles, N. C. / Halliburton, L. E. / Look, D. C. / Reynolds, D. C. et al. | 2003
- 772
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Defect structure of Sn-doped CdTeFranc, J. / Fiederle, M. / Babentsov, V. / Fauler, A. / Benz, K. W. / James, R. et al. | 2003
- 778
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Effects of excess tellurium on the properties of CdZnTe radiation detectorsChu, Muren / Terterian, Sevag / Ting, David / Wang, C. C. / Benson, J. D. / Dinan, J. H. / James, R. B. / Burger, Arnold et al. | 2003
- 783
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Optical properties of CdS0.2Se0.8:VGoldstein, Jonathan T. / Ohmer, Melvin / Hegde, S. M. / Pandey, Ravindra / Burger, Arnold / Morgan, Steven H. / Chen, Kuo-Tong / Chen, Ying-Fang et al. | 2003
- 789
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Internal electric field measurements in cadmium zinc telluride using transmission two-modulator generalized ellipsometryJellison, G. E. Jr. / Holcomb, D. E. / Griffiths, C. O. / Groza, M. / Burger, A. / Li, L. / Lu, F. et al. | 2003
- 796
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Uniformity and reproducibility studies of low-pressure-grown Cd0.90Zn0.10Te crystalline materials for radiation detectorsTerterian, S. / Chu, M. / Ting, D. / Wu, L. C. / Wang, C. C. / Szawlowski, M. / Vissor, G. / Luke, P. N. et al. | 2003
- 803
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Mid-wavelength infrared p-on-n Hg1−xCdxTe heterostructure detectors: 30–120 kelvin state-of-the-Art performanceZandian, Majid / Garnett, J. D. / Dewames, R. E. / Carmody, M. / Pasko, J. G. / Farris, M. / Cabelli, C. A. / Cooper, D. E. / Hildebrandt, G. / Chow, J. et al. | 2003
- 810
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Low-temperature annealing of (Hg,Cd)TeChandra, D. / Schaake, H. F. / Kinch, M. A. et al. | 2003
- 816
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Inductively coupled plasma etching of HgCdTeSmith, E. P. G. / Gleason, J. K. / Pham, L. T. / Patten, E. A. / Welkowsky, M. S. et al. | 2003
- 821
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Scalability of dry-etch processing for small unit-cell HgCdTe focal-plane arraysSmith, E. P. G. / Venzor, G. M. / Goetz, P. M. / Varesi, J. B. / Pham, L. T. / Patten, E. A. / Radford, W. A. / Johnson, S. M. / Stoltz, A. J. / Bensen, J. D. et al. | 2003