Сomposition Depth Profiling of the GaAs Native Oxide Irradiated by an $ Ar^{+} $ Ion Beam (English)
- New search for: Mikoushkin, V. M.
- New search for: Bryzgalov, V. V.
- New search for: Makarevskaya, E. A.
- New search for: Solonitsyna, A. P.
- New search for: Marchenko, D.E.
- New search for: Mikoushkin, V. M.
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- New search for: Makarevskaya, E. A.
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In:
Semiconductors
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52
, 16
; 2057-2060
;
2018
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ISSN:
- Article (Journal) / Print
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Title:Сomposition Depth Profiling of the GaAs Native Oxide Irradiated by an $ Ar^{+} $ Ion Beam
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Contributors:Mikoushkin, V. M. ( author ) / Bryzgalov, V. V. ( author ) / Makarevskaya, E. A. ( author ) / Solonitsyna, A. P. ( author ) / Marchenko, D.E. ( author )
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Published in:Semiconductors ; 52, 16 ; 2057-2060
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Publisher:
- New search for: Pleiades Publishing
- New search for: Pleiades Publ.
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Place of publication:New York, NY
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Publication date:2018
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ISSN:
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ZDBID:
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DOI:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
- New search for: 53.00
- Further information on Basic classification
- New search for: 770/3480/8000
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Keywords:
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Classification:
BKL: 53.00 Elektrotechnik: Allgemeines Local classification TIB: 770/3480/8000 -
Source:
Table of contents – Volume 52, Issue 16
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
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Investigation of DC and RF Performance of Novel MOSHEMT on Silicon Substrate for Future Submillimetre Wave ApplicationsAjayan, J. / Ravichandran, T. / Mohankumar, P. / Prajoon, P. / Pravin, J. Charles / Nirmal, D. et al. | 2018
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- 2007
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- 2017
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- 2022
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Critical Radius of Full Depletion in Semiconductor Nanowires Caused by Surface Charge TrappingPetrosyan, S. G. / Yesayan, A. E. / Nersesyan, S. R. / Khachatryan, V. A. et al. | 2018
- 2026
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Near-Infrared InGaN Alloys Grown on High-In-Composition InGaN Buffer LayerGuo, Fuqiang / Zhang, Baohua / Li, Yanqing / Chen, Dunjun et al. | 2018
- 2030
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Microstructural Evolution of MOVPE Grown GaN by the Carrier GasDemir, I. / Altuntas, I. / Kasapoğlu, A. E. / Mobtakeri, S. / Gür, E. / Elagoz, S. et al. | 2018
- 2039
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Structural, Thermal and Luminescence Properties of AlN:Tm Thin Films Deposited on Silicon Substrate and Optical FiberAlruwaili, Amani / Milinovic, Dunja / Khan, Tahirzeb / Ali, Ghafar / Ahmad, Iftikhar et al. | 2018
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- 2057
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Сomposition Depth Profiling of the GaAs Native Oxide Irradiated by an $ Ar^{+} $ Ion BeamMikoushkin, V. M. / Bryzgalov, V. V. / Makarevskaya, E. A. / Solonitsyna, A. P. / Marchenko, D.E. et al. | 2018
- 2061
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In situ Bandgap Determination of the GaAsN Nanolayer Prepared by Low-Energy $${\text{N}}_{2}^{ + }$$Ion ImplantationMikoushkin, V. M. et al. | 2018
- 2065
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Atomic Force Microscopy Study of Monodisperse Carbon NanoparticlesMuravijova, D. V. / Ermakov, I. A. / Eurov, D. A. / Kirilenko, D. A. / Kurdyukov, D. A. / Rabchinskii, M. K. / Shvidchenko, A. V. / Trofimuk, A. D. / Baidakova, M. V. et al. | 2018
- 2068
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Polarized Retroreflection from Nanoporous III–V SemiconductorsPrislopski, S. Ya. / Gaponenko, S. V. / Monaico, E. / Sergentu, V. V. / Tiginyanu, I. M. et al. | 2018
- 2070
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- 2073
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Growth of Textured Au–Fe/Fe Hybrid Nanocrystals on Oxidized Silicon SurfaceTarasov, I. A. / Smolyarova, T. E. / Yakovlev, I. A. / Kosyrev, N. N. / Komarov, V. A. / Nemtsev, I. V. / Varnakov, S. N. / Patrin, S. G. / Ovchinnikov, S. G. et al. | 2018
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- 2111
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Structural Transformation of “Silica+Zn” Nanocomposite after Annealing in Oxidizing AtmosphereKomarov, F. F. / Makhavikou, M. A. / Vlasukova, L. A. / Milchanin, O. V. / Skuratov, V. A. / Vuuren, A. Janse / Neetling, J. N. / Parkhomenko, I. N. / Żuk, J. et al. | 2018
- 2114
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Monte Carlo Simulation of Ga Droplet Movement during the GaAs Langmuir EvaporationSpirina, A. A. / Nastovjak, A. G. / Neizvestny, I. G. / Shwartz, N. L. et al. | 2018
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