Comparison of ArF and KrF laser performance at 2 kHz for microlithography (English)
- New search for: Besaucele, Herve
- New search for: Das, Palash P.
- New search for: Duffey, Thomas P.
- New search for: Embree, Todd J.
- New search for: Ershov, Alexander I.
- New search for: Fleurov, Vladimir B.
- New search for: Grove, Steven L.
- New search for: Melcher, Paul C.
- New search for: Ness, Richard M.
- New search for: Padmabandu, Gunasiri G.
- New search for: Besaucele, Herve
- New search for: Das, Palash P.
- New search for: Duffey, Thomas P.
- New search for: Embree, Todd J.
- New search for: Ershov, Alexander I.
- New search for: Fleurov, Vladimir B.
- New search for: Grove, Steven L.
- New search for: Melcher, Paul C.
- New search for: Ness, Richard M.
- New search for: Padmabandu, Gunasiri G.
In:
Proc. SPIE
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4000
; 1476
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2000
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ISBN:
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ISSN:
- Conference paper / Electronic Resource
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Title:Comparison of ArF and KrF laser performance at 2 kHz for microlithography
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Contributors:Besaucele, Herve ( author ) / Das, Palash P. ( author ) / Duffey, Thomas P. ( author ) / Embree, Todd J. ( author ) / Ershov, Alexander I. ( author ) / Fleurov, Vladimir B. ( author ) / Grove, Steven L. ( author ) / Melcher, Paul C. ( author ) / Ness, Richard M. ( author ) / Padmabandu, Gunasiri G. ( author )
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Conference:Optical Microlithography XIII ; 2000 ; Santa Clara,CA,USA
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Published in:Proc. SPIE ; 4000 ; 1476
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Publisher:
- New search for: SPIE
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Publication date:2000-07-05
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ISBN:
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ISSN:
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DOI:
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Type of media:Conference paper
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents conference proceedings
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 2
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Review of photoresist-based lens evaluation methodsKirk, Joseph P. et al. | 2000
- 2
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Review of photoresist-based lens evaluation methods (Invited Paper) [4000-01]Kirk, J. P. / SPIE et al. | 2000
- 9
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Impact of high-order aberrations on the performance of the aberration monitorDirksen, Peter / Juffermans, Casper A. H. / Engelen, Andre / De Bisschop, Peter / Muellerke, Henning et al. | 2000
- 9
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Impact of high-order aberrations on the performance of the aberration monitor [4000-02]Dirksen, P. / Juffermans, C. A. / Engelen, A. / De Bisschop, P. / Muellerke, H. / SPIE et al. | 2000
- 18
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In-situ measurement of lens aberrations [4000-03]Farrar, N. R. / Smith, A. H. / Busath, D. R. / Taitano, D. / SPIE et al. | 2000
- 18
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In-situ measurement of lens aberrationsFarrar, Nigel R. / Smith, Adlai H. / Busath, Daniel R. / Taitano, Dennis et al. | 2000
- 30
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Measurement of lens aberration by using in-situ interferometer and classification of lens for correct applicationSeong, Nakgeuon / Yeo, Gisung / Cho, Hanku / Moon, Joo-Tae et al. | 2000
- 30
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Measurement of lens aberration by using in-situ interferometer and classification of lens for correct application [4000-04]Seong, N. / Yeo, G. / Cho, H. / Moon, J. / SPIE et al. | 2000
- 40
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Zernike coefficients: are they really enough?Progler, Christopher J. / Wong, Alfred K. K. et al. | 2000
- 40
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Zernike coefficients: are they really enough? [4000-05]Progler, C. J. / Wong, A. K. / SPIE et al. | 2000
- 54
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Effect of real masks on wafer patterning [4000-06]Spence, C. A. / Subramanian, R. / Teng, D. / Gallardo, E. / SPIE et al. | 2000
- 54
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Effect of real masks on wafer patterningSpence, Chris A. / Subramanian, Ramkumar / Teng, David / Gallardo, Ernesto et al. | 2000
- 63
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Lithographic comparison of assist feature design strategiesMansfield, Scott M. / Liebmann, Lars W. / Molless, Antoinette F. / Wong, Alfred K. K. et al. | 2000
- 63
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Lithographic comparison of assist feature design strategies [4000-07]Mansfield, S. M. / Liebmann, L. W. / Molless, A. F. / Wong, A. K. / SPIE et al. | 2000
- 77
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Analytical description of antiscattering and scattering bar assist featuresPetersen, John S. et al. | 2000
- 77
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Analytical description of antiscattering and scattering bar assist features [4000-08]Petersen, J. S. / SPIE et al. | 2000
- 90
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OPC methodology and implementation to prototyping of small SRAM cells of 0.18-mum node logic gate levels [4000-09]He, Q. / Chang, M.-C. / Palme, S. R. / Sadra, K. / SPIE et al. | 2000
- 90
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OPC methodology and implementation to prototyping of small SRAM cells of 0.18-μm node logic gate levelsHe, Qizhi / Chang, Mi-Chang / Palmer, Shane R. / Sadra, Kayvan et al. | 2000
- 99
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0.13-μm optical lithography for random logic devices using 248-nm attenuated phase-shifting masksChen, Yung-Tin / Lin, Chia-Hui / Lin, Hua Tai / Hsieh, Hung-Chang / Yu, Shinn Sheng / Yen, Anthony et al. | 2000
- 99
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0.13-mum optical lithography for random logic devices using 248-nm attenuated phase-shifting masks [4000-10]Chen, Y. T. / Lin, C. H. / Lin, H. T. / Hsieh, H. C. / Yu, S. S. / Yen, A. / SPIE et al. | 2000
- 112
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Alt-PSM for 0.10-μm and 0.13-μm polypatterningSchenker, Richard E. / Kirchauer, Heinrich / Stivers, Alan R. / Tejnil, Edita et al. | 2000
- 112
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Alt-PSM for 0.10-mum and 0.13-mum polypatterning [4000-11]Schenker, R. E. / Kirchauer, H. / Stivers, A. R. / Tejnil, E. / SPIE et al. | 2000
- 121
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Method of expanding process window for the double exposure technique with alt-PSMs [4000-12]Kikuchi, K. / Ohnuma, H. / Kawahira, H. / SPIE et al. | 2000
- 121
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Method of expanding process window for the double exposure technique with alt-PSMsKikuchi, Koji / Ohnuma, Hidetoshi / Kawahira, Hiroichi et al. | 2000
- 132
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Process capability analysis of DUV alternating PSM and DUV attenuated PSM lithography for 100-nm gate fabrication [4000-13]Kim, K. / Mason, M. E. / Randall, J. N. / Kim, W. D. / SPIE et al. | 2000
- 132
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Process capability analysis of DUV alternating PSM and DUV attenuated PSM lithography for 100-nm gate fabricationKim, Keeho / Mason, Mark E. / Randall, John N. / Kim, Won D. et al. | 2000
- 149
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0.3-μm pitch random interconnect patterning with node connection phase-shifting mask: experiments and simulationsFukuda, Hiroshi / Hotta, Shoji et al. | 2000
- 149
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0.3-mum pitch random interconnect patterning with node connection phase-shifting mask: experiments and simulations [4000-32]Fukuda, H. / Hotta, S. / SPIE et al. | 2000
- 160
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Phase aware proximity correction for advanced masksToublan, Olivier / Sahouria, Emile Y. / Cobb, Nicolas B. / Do, Thuy / Donnelly, Tom / Granik, Yuri / Schellenberg, Franklin M. / Schiavone, Patrick et al. | 2000
- 160
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Phase aware proximity correction for advanced masks [4000-15]Toublan, O. / Sahouria, E. Y. / Cobb, N. B. / Do, T. / Donnelly, T. / Granik, Y. / Schellenberg, F. M. / Schiavone, P. / SPIE et al. | 2000
- 172
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Optical lithography into the millennium: sensitivity to aberrations, vibration, and polarizationFlagello, Donis G. / Mulkens, Jan / Wagner, Christian et al. | 2000
- 172
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Optical lithography into the millennium: sensitivity to aberrations, vibration, and polarization [4000-16]Flagello, D. G. / Mulkens, J. / Wagner, C. / SPIE et al. | 2000
- 184
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Characterization of linewidth variation [4000-17]Wong, A. K. / Molless, A. F. / Brunner, T. A. / Coker, E. / Fair, R. H. / Mack, G. L. / Mansfield, S. M. / SPIE et al. | 2000
- 184
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Characterization of linewidth variationWong, Alfred K. K. / Molless, Antoinette F. / Brunner, Timothy A. / Coker, Eric / Fair, Robert H. / Mack, George L. / Mansfield, Scott M. et al. | 2000
- 192
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KrF lithography for 130 nmFinders, Jo / van Schoot, Jan B. / Vanoppen, Peter / Dusa, Mircea V. / Socha, Robert J. / Vandenberghe, Geert / Ronse, Kurt G. et al. | 2000
- 192
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KrF lithography for 130 nm [4000-18]Finders, J. / van Schoot, J. B. / Vanoppen, P. / Dusa, M. V. / Socha, R. J. / Vandenberghe, G. / Ronse, K. / SPIE et al. | 2000
- 206
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Impact of optical enhancement techniques on the mask error enhancement function (MEEF)Plat, Marina V. / Nguyen, Khanh B. / Spence, Chris A. / Lyons, Christopher F. / Wilkison, Amada et al. | 2000
- 206
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Impact of optical enhancement techniques on the mask error enhancement function (MEEF) [4000-19]Plat, M. V. / Nguyen, K. B. / Spence, C. A. / Lyons, C. F. / Wilkison, A. / SPIE et al. | 2000
- 215
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Analytic approach to understanding the impact of mask errors on optical lithographyMack, Chris A. et al. | 2000
- 215
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Analytic approach to understanding the impact of mask errors on optical lithography [4000-20]Mack, C. A. / SPIE et al. | 2000
- 228
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Modeling oblique incidence effects in photomasks [4000-21]Pistor, T. V. / Neureuther, A. R. / Socha, R. J. / SPIE et al. | 2000
- 228
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Modeling oblique incidence effects in photomasksPistor, Thomas V. / Neureuther, Andrew R. / Socha, Robert J. et al. | 2000
- 240
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IDEAL double exposure method for polylevel structures [4000-22]Romeo, C. / Canestrari, P. / Fiorino, A. / Hasegawa, M. / Saitoh, K. / Suzuki, A. / SPIE et al. | 2000
- 240
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IDEAL double exposure method for polylevel structuresRomeo, Carmelo / Canestrari, Paolo / Fiorino, Antonio / Hasegawa, Masanobu / Saitoh, Kenji / Suzuki, Akiyoshi et al. | 2000
- 252
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Spatial frequency filtering in the pellicle planeSmith, Bruce W. / Kang, Hoyoung et al. | 2000
- 252
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Spatial frequency filtering in the pellicle plane [4000-23]Smith, B. W. / Kang, H. / SPIE et al. | 2000
- 266
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High-density lithography using attenuated phase-shift mask and negative resistPau, Stanley / Cirelli, Raymond A. / Bolan, Kevin J. / Timko, Allen G. / Frackoviak, John / Watson, Pat G. / Trimble, Lee E. / Blatchford, James W. / Nalamasu, Omkaram et al. | 2000
- 266
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High-density lithography using attenuated phase-shift mask and negative resist [4000-24]Pau, S. / Cirelli, R. A. / Bolan, K. J. / Timko, A. G. / Frackoviak, J. / Watson, G. P. / Trimble, L. E. / Blatchford, J. W. / Nalamasu, O. / SPIE et al. | 2000
- 271
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Customized illumination aperture filter for low k~1 photolithography process [4000-25]Gau, T.-S. / Liu, R.-G. / Chen, C.-K. / Lai, C.-M. / Liang, F.-J. / Hsia, C. C. / SPIE et al. | 2000
- 271
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Customized illumination aperture filter for low k1photolithography processGau, Tsai-Sheng / Liu, Ru-Gun / Chen, Chun-Kuang / Lai, Chih-Ming / Liang, Fu-Jye / Hsia, Chin C. et al. | 2000
- 283
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Patterning 220-nm pitch DRAM patterns by using double mask exposureNam, Dongseok / Seong, Nakgeuon / Cho, Hanku / Moon, Joo-Tae / Lee, Sangin et al. | 2000
- 283
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Patterning 220-nm pitch DRAM patterns by using double mask exposure [4000-26]Nam, D. / Seong, N. / Cho, H. / Moon, J. / Lee, S. / SPIE et al. | 2000
- 294
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Understanding lens aberration and influences to lithographic imaging [4000-27]Smith, B. W. / Schlief, R. E. / SPIE et al. | 2000
- 294
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Understanding lens aberration and influences to lithographic imagingSmith, Bruce W. / Schlief, Ralph E. et al. | 2000
- 307
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Pattern asymmetry correction using assist patterns [4000-28]Ryoo, M. / Nam, D. / Cho, H. / Moon, J. / Lee, S. / SPIE et al. | 2000
- 307
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Pattern asymmetry correction using assist patternsRyoo, Manhyoung / Nam, Dongseok / Cho, Hanku / Moon, Joo-Tae / Lee, Sangin et al. | 2000
- 315
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Interaction of pattern orientation and lens quality on CD and overlay errorsBukofsky, Scott J. / Progler, Christopher J. et al. | 2000
- 315
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Interaction of pattern orientation and lens quality on CD and overlay errors [4000-29]Bukofsky, S. J. / Progler, C. J. / SPIE et al. | 2000
- 326
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Practical optical-proximity-correction approach by considering interlayer overlap [4000-30]Choi, B.-I. / Khoh, A. / SPIE et al. | 2000
- 326
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Practical optical-proximity-correction approach by considering interlayer overlapChoi, Byoung-Il / Khoh, Andrew et al. | 2000
- 335
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Process performance comparisons on 300-mm i-line steppers, DUV stepper, and DUV scannersSchedel, Thorsten / Charles, Alain B. / Ganz, Dietmar / Hornig, Steffen R. / Hraschan, Guenther / Koestler, Wolfram / Maltabes, John G. / Mautz, Karl E. / Metzdorf, Thomas / Otto, Ralf et al. | 2000
- 335
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Process performance comparisons on 300-mm i-line steppers, DUV stepper, and DUV scanners [4000-31]Schedel, T. / Charles, A. B. / Ganz, D. / Hornig, S. R. / Hraschan, G. / Kostler, W. / Maltabes, J. G. / Mautz, K. F. / Metzdorf, T. / Otto, R. et al. | 2000
- 344
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Advanced technology for extending optical lithography [4000-53]Wagner, C. / Kaiser, W. M. / Mulkens, J. / Flagello, D. G. / SPIE et al. | 2000
- 344
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Advanced technology for extending optical lithographyWagner, Christian / Kaiser, Winfried M. / Mulkens, Jan / Flagello, Donis G. et al. | 2000
- 358
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Extension of KrF lithography to sub-50-nm pattern formationNakao, Shuji / Itoh, Jiroh / Nakae, Akihiro / Kanai, Itaru / Saitoh, Takayiki / Matsubara, Hirosi / Tsujita, Kouichirou / Arimoto, Ichiriou / Wakamiya, Wataru et al. | 2000
- 358
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Extension of KrF lithography to sub-50-nm pattern formation [4000-33]Nakao, S. / Itoh, J. / Nakae, A. / Kanai, I. / Saitoh, T. / Matsubara, H. / Tsujita, K. / Arimoto, I. / Wakamiya, W. / SPIE et al. | 2000
- 366
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Phase-mask effects by dark-field lithographyWhite, Donald L. / Cirelli, Raymond A. / Spector, Steven J. / Blakey, Myrtle I. / Wood, Obert R. et al. | 2000
- 366
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Phase-mask effects by dark-field lithography [4000-34]White, D. L. / Cirelli, R. A. / Spector, S. J. / Blakey, M. I. / Wood, O. R. / SPIE et al. | 2000
- 373
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Limits of optical lithographyMaenhoudt, Mireille / Verhaegen, Staf / Ronse, Kurt G. / Zandbergen, Peter / Muzio, Edward G. et al. | 2000
- 373
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Limits of optical lithography [4000-35]Maenhoudt, M. / Verhaegen, S. / Ronse, K. / Zandberger, P. / Muzio, E. G. / SPIE et al. | 2000
- 388
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Application of chromeless phase-shift masks to sub-100-nm SOI CMOS transistor fabricationFritze, Michael / Burns, James M. / Wyatt, Peter W. / Astolfi, David K. / Forte, T. / Yost, Donna / Davis, Paul / Curtis, Andrew V. / Preble, Douglas M. / Cann, Susan G. et al. | 2000
- 388
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Application of chromeless phase-shift masks to sub-100-nm SOI CMOS transistor fabrication [4000-36]Fritze, M. / Burns, J. M. / Wyatt, P. W. / Astolfi, D. K. / Forte, T. / Yost, D. / Davis, P. / Curtis, A. V. / Preble, D. M. / Cann, S. G. et al. | 2000
- 410
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Status of ArF lithography for the 130-nm technology node [4000-37]Ronse, K. / Vandenberghe, G. / Jaenen, P. / Delvaux, C. / Vangoidsenhoven, D. / Van Roey, F. / Pollers, I. / Maenhoudt, M. / Goethals, A. M. / Pollentier, I. K. et al. | 2000
- 410
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Status of ArF lithography for the 130-nm technology nodeRonse, Kurt G. / Vandenberghe, Geert / Jaenen, Patrick / Delvaux, Christie / Vangoidsenhoven, Diziana / Van Roey, Frieda / Pollers, Ingrid / Maenhoudt, Mireille / Goethals, Anne-Marie / Pollentier, Ivan K. et al. | 2000
- 423
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Integration considerations for 130-nm device patterning using ArF lithography [4000-38]Okoroanyanwu, U. / Levinson, H. J. / Yang, C.-Y. / Pangrle, S. K. / Schefske, J. A. / Kent, E. / SPIE et al. | 2000
- 423
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Integration considerations for 130-nm device patterning using ArF lithographyOkoroanyanwu, Uzodinma / Levinson, Harry J. / Yang, Chih-Yuh / Pangrle, Suzette K. / Schefske, Jeff A. / Kent, Eric et al. | 2000
- 435
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Comparison study for sub-0.13-mum lithography between ArF and KrF lithography [4000-39]Kim, S.-K. / Kim, Y.-S. / Kim, J.-S. / Bok, C.-K. / Ham, Y.-M. / Baik, K.-H. / SPIE et al. | 2000
- 435
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Comparison study for sub-0.13-μm lithography between ArF and KrF lithographyKim, Seok-Kyun / Kim, YoungSik / Kim, Jin-Soo / Bok, Cheol-Kyu / Ham, Young-Mog / Baik, Ki-Ho et al. | 2000
- 443
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Feasibility study of an embedded transparent phase-shifting mask in ArF lithographyMatsuo, Takahiro / Ogawa, Tohru / Morimoto, Hiroaki et al. | 2000
- 443
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Feasibility study of an embedded transparent phase-shifting mask in ArF lithography [4000-40]Matsuo, T. / Ogawa, T. / Morimoto, H. / SPIE et al. | 2000
- 452
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Electrical critical dimension metrology for 100-nm linewidths and belowGrenville, Andrew / Coombs, Brian / Hutchinson, John M. / Kuhn, Kelin J. / Miller, David / Troccolo, Patrick M. et al. | 2000
- 452
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Electrical critical dimension metrology for 100-nm linewidths and below [4000-41]Grenville, A. / Coombs, B. / Hutchinson, J. M. / Kuhn, K. J. / Miller, D. / Troccolo, P. M. / SPIE et al. | 2000
- 460
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Issues and nonissues on a 193-nm step-and-scan system in productionSchefske, Jeff A. / Kent, Eric / Okoroanyanwu, Uzodinma / Levinson, Harry J. / Masud, Charles R. / Streefkerk, Bob / Hanzen, Ralph M. / Brueback, Joerg et al. | 2000
- 460
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Issues and nonissues on a 193-nm step-and-scan system in production [4000-42]Schefske, J. A. / Kent, E. / Okoroanyanwu, U. / Levinson, H. J. / Masud, C. R. / Streefkerk, B. / Hanzen, R. / Brueback, J. / SPIE et al. | 2000
- 474
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Experimentation and modeling of organic photocontamination on lithographic opticsKunz, Roderick R. / Liberman, Vladimir / Downs, Deanna K. et al. | 2000
- 474
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Experimentation and modeling of organic photocontamination on lithographic optics [4000-43]Kunz, R. R. / Liberman, V. / Downs, D. K. / SPIE et al. | 2000
- 488
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Long-term testing of optical components for 157-nm lithography [4000-44]Liberman, V. / Rothschild, M. / Sedlacek, J. H. C. / Uttaro, R. S. / Bates, A. K. / Orvek, K. J. / SPIE et al. | 2000
- 488
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Long-term testing of optical components for 157-nm lithographyLiberman, Vladimir / Rothschild, Mordechai / Sedlacek, Jan H. C. / Uttaro, Ray S. / Bates, Allen K. / Orvek, Kevin J. et al. | 2000
- 496
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Behavior of fused silica materials for microlithography irradiated at 193 nm with low-fluence ArF radiation for tens of billions of pulses [4000-46]Morton, R. G. / Sandstrom, R. L. / Blumenstock, G. M. / Bor, Z. / Van Peski, C. K. / SPIE et al. | 2000
- 496
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Behavior of fused silica materials for microlithography irradiated at 193 nm with low-fluence ArF radiation for tens of billions of pulsesMorton, Richard G. / Sandstrom, Richard L. / Blumenstock, Gerry M. / Bor, Zsolt / Van Peski, Chris K. et al. | 2000
- 511
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Prospects for long-pulse operation of ArF lasers for 193-nm microlithographyHofmann, Thomas / Johanson, Bruce / Das, Palash P. et al. | 2000
- 511
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Prospects for long-pulse operation of ArF lasers for 193-nm microlithography [4000-47]Hofmann, T. / Johanson, B. / Das, P. P. / SPIE et al. | 2000
- 520
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Overlay performance in advanced processes [4000-48]Bornebroek, F. / Burghoorn, J. / Greeneich, J. S. / Megens, H. J. / Satriasaputra, D. / Simons, G. / Stalnaker, S. / Koek, B. / SPIE et al. | 2000
- 520
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Overlay performance in advanced processesBornebroek, Frank / Burghoorn, Jaap / Greeneich, James S. / Megens, Henry J. L. / Satriasaputra, Danu / Simons, Geert / Stalnaker, Sunny / Koek, Bert et al. | 2000
- 532
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193-nm step-and-scan lithography equipmentSano, Naoto / Takahashi, Kazuhiro / Nakano, Hitoshi / Suzuki, Akiyoshi et al. | 2000
- 532
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193-nm step-and-scan lithography equipment [4000-49]Sano, N. / Takahashi, K. / Nakano, H. / Suzuki, A. / SPIE et al. | 2000
- 542
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Advances in 193-nm lithography tools [4000-50]Cote, D. R. / Ahouse, D. / Galburt, D. N. / Harrold, H. / Kreuzer, J. / Nelson, M. / Oskotsky, M. L. / O Connor, G. / Sewell, H. / Williamson, D. M. et al. | 2000
- 542
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Advances in 193-nm lithography toolsCote, Daniel R. / Ahouse, David / Galburt, Daniel N. / Harrold, Hilary G. / Kreuzer, Justin / Nelson, Mike / Oskotsky, Mark L. / O'Connor, Geoffrey / Sewell, Harry / Williamson, David M. et al. | 2000
- 551
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Aberration averaging using point spread function for scanning projection systemsOoki, Hiroshi / Noda, Tomoya / Matsumoto, Koichi et al. | 2000
- 551
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Aberration averaging using point spread function for scanning projection systems [4000-51]Ooki, H. / Noda, T. / Matsumoto, K. / SPIE et al. | 2000
- 559
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Realization of very small aberration projection lenses [4000-52]Yoshihara, T. / Koizumi, R. / Takahashi, K. / Suda, S. / Suzuki, A. / SPIE et al. | 2000
- 559
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Realization of very small aberration projection lensesYoshihara, Toshiyuki / Koizumi, Ryo / Takahashi, Kazuhiro / Suda, Shigeyuki / Suzuki, Akiyoshi et al. | 2000
- 567
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Development of 157-nm small-field and mid-field microsteppers [4000-174]Miller, R. E. / Bischoff, P. M. / Sumner, R. C. / Bowler, S. / Flack, W. W. / Fong, G. / SPIE et al. | 2000
- 567
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Development of 157-nm small-field and mid-field microsteppersMiller, Ron E. / Bischoff, Paul M. / Sumner, Roger C. / Bowler, Stephen W. / Flack, Warren W. / Fong, Galen et al. | 2000
- 580
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Understanding the impact of full-field mask error factor [4000-54]Conley, W. E. / Shi, X. / Hankinson, M. / Dusa, M. V. / Socha, R. J. / Garza, C. / SPIE et al. | 2000
- 580
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Understanding the impact of full-field mask error factorConley, Will / Shi, Xuelong / Hankinson, Matt / Dusa, Mircea V. / Socha, Robert J. / Garza, Cesar et al. | 2000
- 588
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Impact of MEEF on low k1lithography and mask inspectionQian, Qi-De et al. | 2000
- 588
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Impact of MEEF on low k~1 lithography and mask inspection [4000-55]Qian, Q.-D. / SPIE et al. | 2000
- 594
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Mask error factor impact on the 130-nm node [4000-56]Randall, J. N. / Baum, C. C. / Kim, K. / Mason, M. E. / SPIE et al. | 2000
- 594
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Mask error factor impact on the 130-nm nodeRandall, John N. / Baum, Christopher C. / Kim, Keeho / Mason, Mark E. et al. | 2000
- 602
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Characterization of spatial CD variability, spatial mask-level correction, and improvement of circuit performance [4000-58]Orshansky, M. / Milor, L. / Brodsky, M. / Nguyen, L. / Hill, G. / Peng, Y. / Hu, C. / SPIE et al. | 2000
- 602
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Characterization of spatial CD variability, spatial mask-level correction, and improvement of circuit performanceOrshansky, Michael / Milor, Linda / Brodsky, Michael / Nguyen, Ly / Hill, Gene / Peng, Yeng-Kaung / Hu, Chenming et al. | 2000
- 612
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Validation of repair process for DUV attenuated phase-shift maskPaek, Seung-Weon / Kim, Hee-Bom / Ahn, Chang-Nam / Koo, Young-Mo / Baik, Ki-Ho et al. | 2000
- 612
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Validation of repair process for DUV attenuated phase-shift mask [4000-59]Paek, S. W. / Kim, H.-B. / Ahn, C.-N. / Koo, Y.-M. / Baik, K.-H. / SPIE et al. | 2000
- 621
-
Predictive and corrective model for bulk heating distortion in photomasksShamoun, Bassam / Trost, David / Chilese, Frank et al. | 2000
- 621
-
Predictive and corrective model for bulk heating distortion in photomasks [4000-61]Shamoun, B. / Trost, D. / Chilese, F. / SPIE et al. | 2000
- 632
-
Pulsed UV laser Raman and fluorescence spectroscopy of large-area fused silica photomask substratesMuehlig, Christian / Bark-Zollmann, Sylvia / Grebner, Dieter / Triebel, Wolfgang et al. | 2000
- 632
-
Pulsed UV laser Raman and fluorescence spectroscopy of large-area fused silica photomask substrates [4000-62]Muhlig, C. / Bark-Zollmann, S. / Grebner, D. / Triebel, W. / SPIE et al. | 2000
- 639
-
Scalable pattern generator data path: for the future [4000-63]Johansson, C. / Ivansen, L. / Thuren, A. / Liden, P. / Bjuggren, M. / SPIE et al. | 2000
- 639
-
Scalable pattern generator data path: for the futureJohansson, Charlotta / Ivansen, Lars / Thuren, Anders / Liden, Per / Bjuggren, Mans et al. | 2000
- 647
-
New pattern generation system based on i-line stepper: photomask repeater [4000-64]Kyoh, S. / Inoue, S. / Higashikawa, I. / Mori, I. / Okumura, K. / Irie, N. / Muramatsu, K. / Magome, N. / SPIE et al. | 2000
- 647
-
New pattern generation system based on i-line stepper: photomask repeaterKyoh, Suigen / Inoue, Soichi / Higashikawa, Iwao / Mori, Ichiro / Okumura, Katsuya / Irie, Nobuyuki / Muramatsu, Koji / Magome, Nobutaka et al. | 2000
- 658
-
Modeling the effects of excimer laser bandwidths on lithographic performance [4000-65]Kroyan, A. / Bendik, J. J. / Semprez, O. / Farrar, N. R. / Rowan, C. G. / Mack, C. A. / SPIE et al. | 2000
- 658
-
Modeling the effects of excimer laser bandwidths on lithographic performanceKroyan, Armen / Bendik, Joseph J. / Semprez, Olivier / Farrar, Nigel R. / Rowan, Christopher G. / Mack, Chris A. et al. | 2000
- 665
-
Exposure latitude analysis for dense line and space patterns by using diffused aerial image modelAhn, Chang-Nam / Kim, Hee-Bom / Baik, Ki-Ho et al. | 2000
- 665
-
Exposure latitude analysis for dense line and space patterns by using diffused aerial image model [4000-66]Ahn, C.-N. / Kim, H.-B. / Baik, K.-H. / SPIE et al. | 2000
- 676
-
Direction-oriented partition of unity finite element method for lithography simulation of the image formation problem in photoresistChang, Yao-Chang et al. | 2000
- 676
-
Direction-oriented partition of unity finite element method for lithography simulation of the image formation problem in photoresist [4000-67]Chang, Y.-C. / SPIE et al. | 2000
- 684
-
Rigorous diffraction analysis for future mask technologyErdmann, Andreas / Friedrich, Christoph M. et al. | 2000
- 684
-
Rigorous diffraction analysis for future mask technology [4000-69]Erdmann, A. / Friedrich, C. / SPIE et al. | 2000
- 695
-
Mask topography effects in low k~1 lithography [4000-70]McCallum, M. / Gordon, R. L. / SPIE et al. | 2000
- 695
-
Mask topography effects in low k1lithographyMcCallum, Martin / Gordon, Ronald L. et al. | 2000
- 701
-
157-nm lithography simulation using a finite-difference time-domain method with oblique incidence in a multilayered medium [4000-71]Yeung, M. S. / Barouch, E. / Martin, C. A. / McClay, J. A. / SPIE et al. | 2000
- 701
-
157-nm lithography simulation using a finite-difference time-domain method with oblique incidence in a multilayered mediumYeung, Michael S. / Barouch, Eytan / Martin, Clifford A. / McClay, James A. et al. | 2000
- 711
-
Analysis of OPC features in binary masks at 193 nm [4000-72]Adam, K. / Neureuther, A. R. / SPIE et al. | 2000
- 711
-
Analysis of OPC features in binary masks at 193 nmAdam, Konstantinos / Neureuther, Andrew R. et al. | 2000
- 723
-
Application of an effective wavelet matrix transform approach for optical lithography simulation: analysis of topological effects of phase-shifting masks [4000-73]Lee, S. G. / Kim, H.-J. / Lee, D.-H. / Lee, J.-U. / SPIE et al. | 2000
- 723
-
Application of an effective wavelet matrix transform approach for optical lithography simulation: analysis of topological effects of phase-shifting masksLee, Seung-Gol / Kim, Hyun-Jun / Lee, Dong-Hoon / Lee, Jong-Ung et al. | 2000
- 734
-
Deducing aerial image behavior from AIMS dataGordon, Ronald L. / Flagello, Donis G. / McCallum, Martin et al. | 2000
- 734
-
Deducing aerial image behavior from AIMS data [4000-74]Gordon, R. L. / Flagello, D. G. / McCallum, M. / SPIE et al. | 2000
- 744
-
Factors affecting pitch bias in lithography simulation [4000-75]Robertson, S. A. / Pavelchek, E. K. / Swible-Keane, C. I. / Bohland, J. F. / Reilly, M. T. / SPIE et al. | 2000
- 744
-
Factors affecting pitch bias in lithography simulationRobertson, Stewart A. / Pavelchek, Edward K. / Swible-Keane, Catherine I. / Bohland, John F. / Reilly, Michael T. et al. | 2000
- 759
-
New Lambda/NA scaling equations for resolution and depth-of-focus [4000-76]Lin, B. J. / SPIE et al. | 2000
- 759
-
New λ/NA scaling equations for resolution and depth-of-focusLin, Burn J. et al. | 2000
- 765
-
Theoretical model describing laser microhole drilling processes for organic polymers [4000-77]Wu, F. / SPIE et al. | 2000
- 765
-
Theoretical model describing laser microhole drilling processes for organic polymersWu, Frank F. et al. | 2000
- 776
-
Dynamic performance of DUV step-and-scan systems and process latitude [4000-78]Klaassen, M. / Reuhman, M. / Loock, A. / Rademaker, M. / Gemen, J. / SPIE et al. | 2000
- 776
-
Dynamic performance of DUV step-and-scan systems and process latitudeKlaassen, Michel / Reuhman, Marian / Loock, Antoine / Rademaker, Mike / Gemen, Jack et al. | 2000
- 785
-
Linewidth uniformity error analysis for step-and-scan systemsZimmerman, John D. / Sumra, Javed / Leong, Y.K. A. / Govil, Pradeep K. / Baxter, Greg H. et al. | 2000
- 785
-
Linewidth uniformity error analysis for step-and-scan systems [4000-79]Zimmerman, J. D. / Sumra, J. / Leong, Y. K. A. / Govil, P. K. / Baxter, G. H. / SPIE et al. | 2000
- 794
-
Implementation of an automated feedback focus control methodology for Nikon (NSR) i-line and DUV steppers and scannersLalovic, Ivan / Parry, Joseph T. / Gwynn, Brett / Silsby, Christopher D. et al. | 2000
- 794
-
Implementation of an automated feedback focus control methodology for Nikon (NSR) i-line and DUV steppers and scanners [4000-80]Lalovic, I. / Parry, J. I. / Gwynn, B. / Silsby, C. D. / SPIE et al. | 2000
- 804
-
Impact of illumination pupil-fill spatial variation on simulated imaging performanceBarrett, Terence C. et al. | 2000
- 804
-
Impact of illumination pupil-fill spatial variation on simulated imaging performance [4000-81]Barrett, T. C. / SPIE et al. | 2000
- 818
-
Improving image control by correcting the lens-heating focus driftCheng, Bwo-Jung / Liu, Hsiang-Chung / Cui, Yuanting / Guo, Jiyou et al. | 2000
- 818
-
Improving image control by correcting the lens-heating focus drift [4000-82]Cheng, B.-J. / Liu, H. / Cui, Y. / Guo, J. / SPIE et al. | 2000
- 827
-
Characterization of leveling modes on i-line stepperWachs, Amir / Cohen, David / Margalit-Ilovich, Ayelet et al. | 2000
- 827
-
Characterization of leveling modes on i-line stepper [4000-83]Wachs, A. / Cohen, D. / Margalit, A. / SPIE et al. | 2000
- 835
-
Self-sustaining dose control system: ways to improve the exposure processKivenzor, Gregory J. et al. | 2000
- 835
-
Self-sustaining dose control system: ways to improve the exposure process [4000-84]Kivenzor, G. J. / SPIE et al. | 2000
- 843
-
Advanced mix-and-match using a high-NA i-line scannerKuijten, Jan P. / Harris, Thomas A. / van der Heijden, Ludo / Witko, David / Cossins, John / Foster, James / Ritchie, Douglas R. et al. | 2000
- 843
-
Advanced mix-and-match using a high-NA i-line scanner [4000-86]Kuijten, J. P. / Harris, T. A. / van der Heijden, L. / Witko, D. / Cossins, J. / Foster, J. / Ritchie, D. R. / SPIE et al. | 2000
- 857
-
Effect of nonlinear errors on 300-mm wafer overlay performance [4000-87]Schmidt, S. / Charles, A. B. / Ganz, D. / Hornig, S. R. / Hraschan, G. / Maltabes, J. G. / Mautz, K. E. / Metzdorf, T. / Otto, R. / Scheurich, J. et al. | 2000
- 857
-
Effect of nonlinear errors on 300-mm wafer overlay performanceSchmidt, Sebastian / Charles, Alain B. / Ganz, Dietmar / Hornig, Steffen R. / Hraschan, Guenther / Maltabes, John G. / Mautz, Karl E. / Metzdorf, Thomas / Otto, Ralf / Scheurich, Jochen et al. | 2000
- 866
-
Continuous Image Writer: a new approach to fast direct writingPaufler, Joerg / Brunn, Stefan / Bolle, Joachim / Koerner, Tim / Baudach, Aenne / Lindner, Reiner et al. | 2000
- 866
-
Continuous Image Writer: a new approach to fast direct writing [4000-88]Paufler, J. / Brunn, S. / Bolle, J. / Korner, T. / Baudach, A. / Lindner, R. / SPIE et al. | 2000
- 874
-
Optical holography used in optical microlithographyFeng, Boru / Zhang, Jin / Hou, Desheng / Chen, Fen et al. | 2000
- 874
-
Optical holography used in optical microlithography [4000-89]Feng, B. / Zhang, J. / Hou, D. / Chen, F. / SPIE et al. | 2000
- 880
-
Across field and across wafer flare: from KrF stepper to ArF scanner [4000-90]Trouiller, Y. / Luce, E. / Barberet, A. / Depre, L. / Schiavone, P. / SPIE et al. | 2000
- 880
-
Across field and across wafer flare: from KrF stepper to ArF scannerTrouiller, Yorick / Luce, Emmanuelle / Barberet, Alexandra / Depre, L. / Schiavone, Patrick et al. | 2000
- 892
-
Determining and reducing the overhead losses in an ASIC-type environmentAmes, Dennis B. et al. | 2000
- 892
-
Determining and reducing the overhead losses in an ASIC-type environment [4000-91]Ames, D. B. / SPIE et al. | 2000
- 896
-
Overlay budget considerations for an all-scanner fab [4000-108]Seltmann, R. / Demmerle, W. / Staples, M. / Minvielle, A. M. / Schulz, B. / Muehle, S. / SPIE et al. | 2000
- 896
-
Overlay budget considerations for an all-scanner fabSeltmann, Rolf / Demmerle, Wolfgang / Staples, Marc / Minvielle, Anna Maria / Schulz, Bernd / Muehle, Sven et al. | 2000
- 905
-
Improvement of CD control and resolution by optimizing inorganic ARC processYamaguchi, Atsumi / Ueno, Atsushi / Tsujita, Kouichirou et al. | 2000
- 905
-
Improvement of CD control and resolution by optimizing inorganic ARC process [4000-93]Yamaguchi, A. / Ueno, A. / Tsujita, K. / SPIE et al. | 2000
- 915
-
Novel polymeric antireflective coating (PARC) for better uniformity control of critical dimensionLinliu, Kung / Kuo, Mai-Rue / Huang, Yi-Ren et al. | 2000
- 915
-
Novel polymeric antireflective coating (PARC) for better uniformity control of critical dimension [4000-94]Linliu, K. / Kuo, M.-R. / Huang, Y.-R. / SPIE et al. | 2000
- 927
-
130-nm KrF lithography for DRAM production with 0.68-NA scanner [4000-95]Kawamura, E. / Nagai, K. / Kanemitsu, H. / Tabata, Y. / Inoue, S. / SPIE et al. | 2000
- 927
-
130-nm KrF lithography for DRAM production with 0.68-NA scannerKawamura, Eiichi / Nagai, Kouichi / Kanemitsu, Hideyuki / Tabata, Yasuko / Inoue, Soichi et al. | 2000
- 935
-
Strategy for optimizing random code lithography patterning in 0.18-mum generation mask ROM [4000-96]Chen, C. P. A. / Lin, F. / Yang, T. H. / SPIE et al. | 2000
- 935
-
Strategy for optimizing random code lithography patterning in 0.18-μm generation mask ROMChen, Chih-Ping / Lin, Shun-Li / Yang, Ta-Hung et al. | 2000
- 942
-
Adjustment of bilayer optical properties and the effect on imaging and etching performance [4000-98]Neisser, M. O. / Biafore, J. J. / Foster, P. / Spaziano, G. / Sarubbi, T. R. / Van Driessche, V. / Grozev, G. / Tzviatkov, P. / SPIE et al. | 2000
- 942
-
Adjustment of bilayer optical properties and the effect on imaging and etching performanceNeisser, Mark O. / Biafore, John J. / Foster, Patrick / Spaziano, Gregory D. / Sarubbi, Thomas R. / Van Driessche, Veerle / Grozev, Grozdan / Tzviatkov, Plamen et al. | 2000
- 952
-
Image shortening and process development in BEOL lithography [4000-100]DellaGuardia, R. / Warner, D. J. / Chen, Z. / Stetter, M. / Ferguson, R. A. / McGuire, A. E. / Badger, K. D. / SPIE et al. | 2000
- 952
-
Image shortening and process development in BEOL lithographyDellaGuardia, Ronald / Warner, Dennis J. / Chen, Zheng / Stetter, Martin / Ferguson, Richard A. / McGuire, Anne E. / Badger, Karen D. et al. | 2000
- 962
-
Precise control of critical dimension shrinkage and enlargement by in-situ polysilicon etch [4000-101]Linliu, K. / Kuo, M.-R. / SPIE et al. | 2000
- 962
-
Precise control of critical dimension shrinkage and enlargement by in-situ polysilicon etchLinliu, Kung / Kuo, Mai-Rue et al. | 2000
- 974
-
Structure end foreshortening: lithography-driven design limitations [4000-102]Schroeder, U. P. / Warner, D. J. / SPIE et al. | 2000
- 974
-
Structure end foreshortening: lithography-driven design limitationsSchroeder, Uwe P. / Warner, Dennis J. et al. | 2000
- 982
-
Novel dual-layer polymeric antireflective coating (PARC) for sub-0.18-μm KrF lithographyLinliu, Kung / Huang, Yi-Ren / Kuo, Mai-Rue et al. | 2000
- 982
-
Novel dual-layer polymeric antireflective coating (PARC) for sub-0.18-mum KrF lithography [4000-103]Linliu, K. / Huang, Y.-R. / Kuo, M.-R. / SPIE et al. | 2000
- 994
-
Lithography process cost considerations for 120-nm groundrulesLiegl, Bernhard / Summerer, Christian et al. | 2000
- 994
-
Lithography process cost considerations for 120-nm groundrules [4000-104]Liegl, B. / Summerer, C. / SPIE et al. | 2000
- 1002
-
Simulation-based proximity correction in high-volume DRAM production [4000-85]Fischer, W. / Anke, I. / Schweeger, G. / Thiele, J. / SPIE et al. | 2000
- 1002
-
Simulation-based proximity correction in high-volume DRAM productionFischer, Werner / Anke, Ines / Schweeger, Giorgio / Thiele, Joerg et al. | 2000
- 1010
-
OPC for logic and embedded applications: the reverse approachSchroeder, Uwe P. / Mono, Tobias et al. | 2000
- 1010
-
OPC for logic and embedded applications: the reverse approach [4000-106]Schroeder, U. P. / Mono, T. / SPIE et al. | 2000
- 1015
-
Automatic parallel optical proximity correction and verification systemWatanabe, Takahiro / Tsujimoto, Eiji / Nakajo, Kyoji / Maeda, Keiji et al. | 2000
- 1015
-
Automatic parallel optical proximity correction and verification system [4000-107]Watanabe, T. / Tsujimoto, E. / Nakajo, K. / Maeda, K. / SPIE et al. | 2000
- 1024
-
Accuracy of diffused aerial image model for full-chip-level optical proximity correction [4000-109]Hong, J.-S. / Kim, H.-B. / Yune, H.-S. / Ahn, C.-N. / Koo, Y.-M. / Baik, K.-H. / SPIE et al. | 2000
- 1024
-
Accuracy of diffused aerial image model for full-chip-level optical proximity correctionHong, Jee-Suk / Kim, Hee-Bom / Yune, Hyoung-Soon / Ahn, Chang-Nam / Koo, Young-Mo / Baik, Ki-Ho et al. | 2000
- 1033
-
Variable-threshold optical proximity correction (OPC) models for high-performance 0.18-mum process [4000-110]Liao, H. / Palmer, S. R. / Sadra, K. / SPIE et al. | 2000
- 1033
-
Variable-threshold optical proximity correction (OPC) models for high-performance 0.18-μm processLiao, Hongmei / Palmer, Shane R. / Sadra, Kayvan et al. | 2000
- 1041
-
Optical proximity correction considering mask manufacturability and its application to 0.25-μm DRAM for enhanced device performancePark, Chul-Hong / Rhie, Sang-Uhk / Choi, Ji-Hyeon / Park, Ji-Soong / Seo, Hyeong-Weon / Kim, Yoo-Hyon / Park, Young-Kwan / Han, Woo-Sung / Lee, Won-Seong / Kong, Jeong-Taek et al. | 2000
- 1041
-
Optical proximity correction considering mask manufacturability and its application to 0.25-mum DRAM for enhanced device performance [4000-111]Park, C.-H. / Rhie, S.-U. / Choi, J.-H. / Park, J.-S. / Seo, H.-W. / Kim, Y.-H. / Park, Y.-K. / Han, W.-S. / Lee, W.-S. / Kong, J.-T. et al. | 2000
- 1047
-
Modified proximity function for OPC in laser direct writingDu, Jinglei / Gao, Fuhua / Zhang, Yixiao / Guo, Yongkang / Du, Chunlei / Cui, Zheng et al. | 2000
- 1047
-
Modified proximity function for OPC in laser direct writing [4000-112]Du, J. / Gao, F. / Zhang, Y. / Guo, Y. / Du, C. / Cui, Z. / SPIE et al. | 2000
- 1053
-
Optimization for full-chip process of 130-nm technology with 248-nm DUV lithographyHam, Young-Mog / Kim, Seok-Kyun / Kim, Sang-Jin / Hur, Cheol / Kim, YoungSik / Baik, Ki-Ho / Kim, Bong-Ho / Ahn, Dong-Jun et al. | 2000
- 1053
-
Optimization for full-chip process of 130-nm technology with 248-nm DUV lithography [4000-113]Ham, Y.-M. / Kim, S.-K. / Kim, S.-J. / Hur, C. / Kim, Y.-S. / Baik, K.-H. / Kim, B.-H. / Ahn, D.-J. / SPIE et al. | 2000
- 1062
-
OPC beyond 0.18 μm: OPC on PSM gatesSchellenberg, Franklin M. / Toublan, Olivier / Cobb, Nicolas B. / Sahouria, Emile Y. / Hughes, Greg P. / MacDonald, Susan S. / West, Craig A. et al. | 2000
- 1062
-
OPC beyond 0.18 mum: OPC on PSM gates [4000-114]Schellenberg, F. M. / Toublan, O. / Cobb, N. B. / Sahouria, E. Y. / Hughes, G. P. / MacDonald, S. S. / West, C. A. / SPIE et al. | 2000
- 1070
-
Effects of off-axis illumination and scattering-bar optical proximity correction on the impact of lens aberration on 130-nm polygate mask: a simulation study [4000-175]Nakagawa, K. H. / Hollerbach, U. / Chen, J. F. / SPIE et al. | 2000
- 1070
-
Effects of off-axis illumination and scattering-bar optical proximity correction on the impact of lens aberration on 130-nm polygate mask: a simulation studyNakagawa, Kent H. / Hollerbach, Uwe / Chen, J. Fung et al. | 2000
- 1079
-
Double exposure technique to reduce line shortening and improve pattern fidelityKunkel, Gerhard / Bukofsky, Scott J. / Butt, Shahid A. / Lu, Zhijian G. et al. | 2000
- 1079
-
Double exposure technique to reduce line shortening and improve pattern fidelity [4000-115]Kunkel, G. / Bukofsky, S. J. / Butt, S. A. / Lu, Z. G. / SPIE et al. | 2000
- 1086
-
Fabrication of small contact using practical pupil filtering [4000-116]Kang, H. / Smith, B. W. / SPIE et al. | 2000
- 1086
-
Fabrication of small contact using practical pupil filteringKang, Hoyoung / Smith, Bruce W. et al. | 2000
- 1092
-
Improved process latitude photolithography 0.18-μm technology using multiple focal planesCallec, Anne-Sophie / Chollet, Jean-Paul E. et al. | 2000
- 1092
-
Improved process latitude photolithography 0.18-mum technology using multiple focal planes [4000-117]Callec, A.-S. / Chollet, J.-P. E. / SPIE et al. | 2000
- 1100
-
Depth-of-focus enhancement of isolated lines by multiple-focus exposure with negative-tone resist processFujimoto, Masashi / Yamazaki, Tamio / Hashimoto, Takeo et al. | 2000
- 1100
-
Depth-of-focus enhancement of isolated lines by multiple-focus exposure with negative-tone resist process [4000-118]Fujimoto, M. / Yamazaki, T. / Hashimoto, T. / SPIE et al. | 2000
- 1111
-
Fabrication of isolated gates by negative-tone process and resolution enhancement technology [4000-120]Morikawa, R. / Uchida, N. / Watanabe, M. / Yabe, S. / Machida, S. / Taguchi, T. / SPIE et al. | 2000
- 1111
-
Fabrication of isolated gates by negative-tone process and resolution enhancement technologyMorikawa, Ryoko / Uchida, Noboru / Watanabe, Minoru / Yabe, Sachiko / Machida, Satoshi / Taguchi, Takashi et al. | 2000
- 1123
-
0.32-μm pitch random line pattern formation by dense dummy pattern and double exposure in KrF wavelengthNakao, Shuji / Tsujita, Kouichirou / Arimoto, Ichiriou / Wakamiya, Wataru et al. | 2000
- 1123
-
0.32-mum pitch random line pattern formation by dense dummy pattern and double exposure in KrF wavelength [4000-121]Nakao, S. / Tsujita, K. / Arimoto, I. / Wakamiya, W. / SPIE et al. | 2000
- 1134
-
Low k1process optimization for i-line lithographyKim, Jeong Won / Huh, Hoon / Han, Sang-Bum et al. | 2000
- 1134
-
Low k~1 process optimization for i-line lithography [4000-122]Kim, J. W. / Huh, H. / Han, S. B. / SPIE et al. | 2000
- 1140
-
Forbidden pitches for 130-nm lithography and below [4000-123]Socha, R. J. / Dusa, M. V. / Capodieci, L. / Finders, J. / Chen, J. F. / Flagello, D. G. / Cummings, K. D. / SPIE et al. | 2000
- 1140
-
Forbidden pitches for 130-nm lithography and belowSocha, Robert J. / Dusa, Mircea V. / Capodieci, Luigi / Finders, Jo / Chen, J. Fung / Flagello, Donis G. / Cummings, Kevin D. et al. | 2000
- 1156
-
Simulation-based method for sidelobe supression [4000-124]Dolainsky, C. / Karakatsanis, P. / Gans, F. / Pforr, R. / Thiele, J. / SPIE et al. | 2000
- 1156
-
Simulation-based method for sidelobe supressionDolainsky, Christoph / Karakatsanis, Paul / Gans, Fritz / Pforr, Rainer / Thiele, Joerg et al. | 2000
- 1163
-
High-transmission attenuated PSM: benefits and limitations through a validation study of 33%, 20%, and 6% transmission masksKachwala, Nishrin / Petersen, John S. / McCallum, Martin et al. | 2000
- 1163
-
High-transmission attenuated PSM: benefits and limitations through a validation study of 33%, 20%, and 6% transmission masks [4000-126]Kachwala, N. / Petersen, J. S. / McCallum, M. / SPIE et al. | 2000
- 1175
-
Simpler attenuated phase-shifting maskZhang, Jin / Feng, Boru / Hou, Desheng / Zhou, Chongxi / Yao, HanMin / Guo, Yongkang / Chen, Fen / Sun, Fang / Su, Ping et al. | 2000
- 1175
-
Simpler attenuated phase-shifting mask [4000-127]Zhang, J. / Feng, B. / Hou, D. / Zhou, C. / Yao, H. / Guo, Y. / Chen, F. / Sun, F. / Su, P. / SPIE et al. | 2000
- 1179
-
Application of attenuated phase-shift masks to sub-0.18-mum logic patterns [4000-128]Fritze, M. / Wyatt, P. W. / Astolfi, D. K. / Davis, P. / Curtis, A. V. / Preble, D. M. / Cann, S. G. / Denault, S. / Chan, D. / Shaw, J. C. et al. | 2000
- 1179
-
Application of attenuated phase-shift masks to sub-0.18-μm logic patternsFritze, Michael / Wyatt, Peter W. / Astolfi, David K. / Davis, Paul / Curtis, Andrew V. / Preble, Douglas M. / Cann, Susan G. / Denault, Sandy / Chan, David Y. / Shaw, Joe C. et al. | 2000
- 1193
-
Integration of attenuated phase-shift mask to 0.13-mum technology contact level masking process [4000-129]Choo, L. C. / Park, O. / Sack, M. J. / Tam, S. / SPIE et al. | 2000
- 1193
-
Integration of attenuated phase-shift mask to 0.13-μm technology contact level masking processChoo, Lay C. / Park, O'Seo / Sack, Michael J. / Tam, Siu Chung et al. | 2000
- 1203
-
Practical software design and experimental research of attenuated phase-shifting masksZhou, Chongxi / Feng, Boru / Hou, Desheng / Zhang, Jin et al. | 2000
- 1203
-
Practical software design and experimental research of attenuated phase-shifting masks [4000-130]Zhou, C. / Feng, B. / Hou, D. / Zhang, J. / SPIE et al. | 2000
- 1209
-
Comparison of OPC rules and common process windows for 130-nm features using binary and attenuated phase-shift masksReilly, Michael T. / Parker, Colin R. / Kvam, Karen / Socha, Robert J. / Dusa, Mircea V. et al. | 2000
- 1209
-
Comparison of OPC rules and common process windows for 130-nm features using binary and attenuated phase-shift masks [4000-132]Reilly, M. T. / Parker, C. / Kvam, K. / Socha, R. J. / Dusa, M. V. / SPIE et al. | 2000
- 1223
-
Gauging the performance of an in-situ interferometerTerry, Mark / Smith, Adlai H. / Rebitz, Ken et al. | 2000
- 1223
-
Gauging the performance of an in-situ interferometer [4000-134]Terry, M. / Smith, A. H. / Rebitz, K. / SPIE et al. | 2000
- 1237
-
Sensitivity of coma monitors to resist processes [4000-135]Summerer, C. / Lu, Z. G. / SPIE et al. | 2000
- 1237
-
Sensitivity of coma monitors to resist processesSummerer, Christian / Lu, Zhijian G. et al. | 2000
- 1245
-
Aberrations of steppers using phase-shifting point diffraction interferometry [4000-136]Venkataraman, P. / Smith, B. W. / SPIE et al. | 2000
- 1245
-
Aberrations of steppers using phase-shifting point diffraction interferometryVenkataraman, Parthasarathy / Smith, Bruce W. et al. | 2000
- 1250
-
Degree of patterning performance (DOPP) at low K lithography [4000-137]Yim, D. / Lee, S.-H. / Gil, M.-G. / Ham, Y.-M. / Kim, B.-H. / Baik, K.-H. / SPIE et al. | 2000
- 1250
-
Degree of patterning performance (DOPP) at low K lithographyYim, Donggyu / Lee, Seung-Hyuk / Gil, Myung-Goon / Ham, Young-Mog / Kim, Bong-Ho / Baik, Ki-Ho et al. | 2000
- 1260
-
Lens aberration measurement technique using attentuated phase-shifting mask [4000-139]Imai, A. / Hayano, K. / Fukuda, H. / Asai, N. / Hasegawa, N. / SPIE et al. | 2000
- 1260
-
Lens aberration measurement technique using attentuated phase-shifting maskImai, Akira / Hayano, Katsuya / Fukuda, Hiroshi / Asai, Naoko / Hasegawa, Norio et al. | 2000
- 1269
-
Impact of lens aberration on pattern symmetry of DRAM cellsKobayashi, Katsuyoshi / Yao, Teruyoshi / Yanagishita, Yuichiro / Hanyu, Isamu et al. | 2000
- 1269
-
Impact of lens aberration on pattern symmetry of DRAM cells [4000-140]Kobayashi, K. / Yao, T. / Yanagishita, Y. / Hanyu, I. / SPIE et al. | 2000
- 1281
-
Effect of lens aberrations on pattern placement errorHolscher, Richard D. / Baluswamy, Pary et al. | 2000
- 1281
-
Effect of lens aberrations on pattern placement error [4000-141]Holscher, R. D. / Baluswamy, P. / SPIE et al. | 2000
- 1287
-
Basic imaging characteristics of phase-edge lithography and impact of lens aberration on these characteristicsNakao, Shuji / Kanai, Itaru / Tsujita, Kouichirou / Arimoto, Ichiriou / Wakamiya, Wataru et al. | 2000
- 1287
-
Basic imaging characteristics of phase-edge lithography and impact of lens aberration on these characteristics [4000-142]Nakao, S. / Kanai, I. / Tsujita, K. / Arimoto, I. / Wakamiya, W. / SPIE et al. | 2000
- 1299
-
Influence of resist process on the best focus shift due to lens spherical aberrationMatsuura, Seiji / Uchiyama, Takayuki / Tanabe, Hiroyoshi et al. | 2000
- 1299
-
Influence of resist process on the best focus shift due to lens spherical aberration [4000-143]Matsuura, S. / Uchiyama, T. / Tanabe, H. / SPIE et al. | 2000
- 1311
-
Half-lambda imaging with KrF: performance challenges and trade-offs as expected through simulationSlonaker, Steve D. et al. | 2000
- 1311
-
Half-lambda imaging with KrF: performance challenges and trade-offs as expected through simulation [4000-176]Slonaker, S. D. / SPIE et al. | 2000
- 1323
-
Optimizing edge topography of alternating phase-shift masks using rigorous mask modelingFriedrich, Christoph M. / Mader, Leonhard / Erdmann, Andreas / List, Steffen / Gordon, Ronald L. / Kalus, Christian K. / Griesinger, Uwe A. / Pforr, Rainer / Mathuni, Josef / Ruhl, Guenther G. et al. | 2000
- 1323
-
Optimizing edge topography of alternating phase-shift masks using rigorous mask modeling [4000-145]Friedrich, C. / Mader, L. / Erdmann, A. / List, S. / Gordon, R. L. / Kalus, C. K. / Griesinger, U. A. / Pforr, R. / Mathuni, J. / Ruhl, G. G. et al. | 2000
- 1336
-
Understanding the parameters for strong phase-shift mask lithography [4000-146]Tritchkov, A. V. / Stirniman, J. P. / Mayhew, J. P. / Rieger, M. L. / SPIE et al. | 2000
- 1336
-
Understanding the parameters for strong phase-shift mask lithographyTritchkov, Alexander V. / Stirniman, John P. / Mayhew, Jeffrey P. / Rieger, Michael L. et al. | 2000
- 1347
-
Manufacturability of 248-nm phase-shift lithography for 100-nm transistors [4000-148]Mason, M. E. / Randall, J. N. / Kim, K. / SPIE et al. | 2000
- 1347
-
Manufacturability of 248-nm phase-shift lithography for 100-nm transistorsMason, Mark E. / Randall, John N. / Kim, Keeho et al. | 2000
- 1360
-
Precise CD control of 140-nm gate patterns using phase-edge PSMHotta, Shoji / Inoue, Osamu / Fukuda, Hiroshi / Hasegawa, Norio et al. | 2000
- 1360
-
Precise CD control of 140-nm gate patterns using phase-edge PSM [4000-150]Hotta, S. / Inoue, O. / Fukuda, H. / Hasegawa, N. / SPIE et al. | 2000
- 1371
-
Comparison between 2-phase-shifting mask and 3-phase-shifting mask on application of printing low-duty-ratio contact array patterning [4000-151]Hung, K.-C. / Lin, B. S.-M. / Chang, H.-A. / Tseng, A. / Chung, L.-S. / Liu, W.-J. / Wu, D.-Y. / Huang, P. / SPIE et al. | 2000
- 1371
-
Comparison between 2-phase-shifting mask and 3-phase-shifting mask on application of printing low-duty-ratio contact array patterningHung, Kuei-Chun / Lin, Benjamin S. / Chang, Hsien-an / Tseng, Alex / Chung, Lien-Sheng / Liu, WeiJyh / Wu, Der-Yuan / Huang, Peter et al. | 2000
- 1379
-
Integrated phase-shifting software solution for IC design to manufacturing [4000-179]Liu, H.-Y. / Wu, C. / Li, X. / SPIE et al. | 2000
- 1379
-
Integrated phase-shifting software solution for IC design to manufacturingLiu, Hua-Yu / Wu, Clive / Li, Xiaoyang et al. | 2000
- 1383
-
Al~2O~3 coatings for 193 nm: a nonlinearly absorbing material [4000-152]Apel, O. / Mann, K. R. / SPIE et al. | 2000
- 1383
-
Al2O3coatings for 193 nm: a nonlinearly absorbing materialApel, Oliver / Mann, Klaus R. et al. | 2000
- 1390
-
High-repetition-rate ultranarrow-bandwidth 193-nm excimer lasers for DUV lithographyStamm, Uwe / Paetzel, Rainer / Bragin, Igor / Kleinschmidt, Juergen / Lokai, Peter / Osmanov, Rustem / Schroeder, Thomas / Sprenger, Martin / Zschocke, Wolfgang et al. | 2000
- 1390
-
High-repetition-rate ultranarrow-bandwidth 193-nm excimer lasers for DUV lithography [4000-153]Stamm, U. / Patzel, R. / Bragin, I. / Kleinschmidt, J. / Lokai, P. / Osmanov, R. / Schroder, T. / Sprenger, M. / Zschocke, W. / SPIE et al. | 2000
- 1397
-
High-repetition-rate ArF excimer laser for 193-nm lithography [4000-154]Kakizaki, K. / Saito, T. / Mitsuhashi, K. / Arai, M. / Tada, A. / Kasahara, S. / Igarashi, T. / Hotta, K. / SPIE et al. | 2000
- 1397
-
High-repetition-rate ArF excimer laser for 193-nm lithographyKakizaki, Kouji / Saito, Takashi / Mitsuhashi, Ken-ichi / Arai, Motohiro / Tada, Akifumi / Kasahara, Shinji / Igarashi, Tatsushi / Hotta, Kazuaki et al. | 2000
- 1405
-
Laser spectrum line shape metrology at 193 nm [4000-155]Ershov, A. I. / Padmabandu, G. G. / Tyler, J. D. / Das, P. P. / SPIE et al. | 2000
- 1405
-
Laser spectrum line shape metrology at 193 nmErshov, Alexander I. / Padmabandu, Gunasiri G. / Tyler, Jeremy D. / Das, Palash P. et al. | 2000
- 1418
-
Performance of very high repetition rate ArF lasersHueber, Jean-Marc / Besaucele, Herve / Das, Palash P. / Eis, Rick / Ershov, Alexander I. / Fleurov, Vladimir B. / Gaidarenko, Dmitri / Hofmann, Thomas / Melcher, Paul C. / Partlo, William N. et al. | 2000
- 1418
-
Performance of very high repetition rate ArF lasers [4000-156]Hueber, J.-M. / Besaucele, H. / Das, P. P. / Eis, R. / Ershov, A. I. / Fleurov, V. B. / Gaidarenko, D. / Hofmann, T. / Melcher, P. C. / Partlo, W. N. et al. | 2000
- 1424
-
Output stabilization technology with chemical impurity control on ArF excimer laser [4000-157]Sumitani, A. / Andou, S. / Watanabe, T. / Konishi, M. / Egawa, S. / Uchino, I. / Ohta, T. / Terashima, K. / Suzuki, N. / Enami, T. et al. | 2000
- 1424
-
Output stabilization technology with chemical impurity control on ArF excimer laserSumitani, Akira / Andou, Satoshi / Watanabe, Takehito / Konishi, Masayuki / Egawa, Suguru / Uchino, Ikuo / Ohta, Takeshi / Terashima, Katsutomo / Suzuki, Natsushi / Enami, Tatsuo et al. | 2000
- 1435
-
Highly durable low CoO mass production version of 2-kHz ArF excimer laser for DUV lithographyEnami, Tatsuo / Wakabayashi, Osamu / Ishii, Ken / Terashima, Katsutomo / Itakura, Yasuo / Watanabe, Takayuki / Ohta, Takeshi / Ohbu, Ayako / Kubo, Hirokazu / Tanaka, Hirokazu et al. | 2000
- 1435
-
Highly durable low CoO mass production version of 2-kHz ArF excimer laser for DUV lithography [4000-158]Enami, T. / Wakabayashi, O. / Ishii, K. / Terashima, K. / Itakura, Y. / Watanabe, T. / Ohta, T. / Ohbu, A. / Kubo, H. / Tanaka, H. et al. | 2000
- 1445
-
Prospects for very high repetition rate lasers for microlithographyBragin, Igor / Berger, Vadim / Paetzel, Rainer / Stamm, Uwe / Targsdorf, Andreas / Kleinschmidt, Juergen / Basting, Dirk et al. | 2000
- 1445
-
Prospects for very high repetition rate lasers for microlithography [4000-180]Bragin, I. / Berger, V. / Patzel, R. / Stamm, U. / Targsdorf, A. / Kleinschmidt, J. / Basting, D. / SPIE et al. | 2000
- 1452
-
High-resolution multigrating spectrometer for high-quality deep-UV light source productionSuzuki, Toru / Nakaike, Takanori / Wakabayashi, Osamu / Mizoguchi, Hakaru et al. | 2000
- 1452
-
High-resolution multigrating spectrometer for high-quality deep-UV light source production [4000-159]Suzuki, T. / Nakaike, T. / Wakabayashi, O. / Mizoguchi, H. / SPIE et al. | 2000
- 1461
-
Extending the performance of KrF laser for microlithography by using novel F2control technologyZambon, Paolo / Gong, Mengxiong / Carlesi, Jason / Padmabandu, Gunasiri G. / Binder, Mike / Swanson, Ken / Das, Palash P. et al. | 2000
- 1461
-
Extending the performance of KrF laser for microlithography by using novel F~2 control technology [4000-160]Zambon, P. / Gong, M. / Carlesi, J. / Padmabandu, G. G. / Binder, M. / Swanson, K. / Das, P. P. / SPIE et al. | 2000
- 1471
-
Ultranarrow-bandwidth excimer lasers for 248-nm DUV lithographyPaetzel, Rainer / Albrecht, Hans Stephen / Berger, Vadim / Bragin, Igor / Kramer, Matthias / Kleinschmidt, Juergen / Serwazi, Marcus et al. | 2000
- 1471
-
Ultranarrow-bandwidth excimer lasers for 248-nm DUV lithography [4000-161]Patzel, R. / Albrecht, H.-S. / Berger, V. / Bragin, I. / Kramer, M. / Kleinschmidt, J. / Serwazi, M. / SPIE et al. | 2000
- 1476
-
Comparison of ArF and KrF laser performance at 2 kHz for microlithography [4000-162]Besaucele, H. / Das, P. P. / Duffey, T. P. / Embree, T. J. / Ershov, A. I. / Fleurov, V. B. / Grove, S. L. / Melcher, P. C. / Ness, R. / Padmabandu, G. G. et al. | 2000
- 1476
-
Comparison of ArF and KrF laser performance at 2 kHz for microlithographyBesaucele, Herve / Das, Palash P. / Duffey, Thomas P. / Embree, Todd J. / Ershov, Alexander I. / Fleurov, Vladimir B. / Grove, Steven L. / Melcher, Paul C. / Ness, Richard M. / Padmabandu, Gunasiri G. et al. | 2000
- 1481
-
High-NA high-throughput scanner compatible 2-kHz KrF excimer laser for DUV lithographyNakarai, Hiroaki / Hisanaga, Naoto / Suzuki, Natsushi / Matsunaga, Takeshi / Asayama, Takeshi / Akita, Jun / Igarashi, Toru / Ariga, Tatsuya / Bushida, Satoru / Enami, Tatsuo et al. | 2000
- 1481
-
High-NA high-throughput scanner compatible 2-kHz KrF excimer laser for DUV lithography [4000-163]Nakarai, H. / Hisanaga, N. / Suzuki, N. / Matsunaga, T. / Asayama, T. / Akita, J. / Igarashi, T. / Ariga, T. / Bushida, S. / Enami, T. et al. | 2000
- 1491
-
Fluoropolymers for 157-nm lithography: optical properties from VUV absorbance and ellipsometry measurements [4000-164]French, R. H. / Wheland, R. C. / Jones, D. J. / Hilfiker, J. N. / Synowicki, R. A. / Zumsteg, F. C. / Feldman, J. / Feiring, A. E. / SPIE et al. | 2000
- 1491
-
Fluoropolymers for 157-nm lithography: optical properties from VUV absorbance and ellipsometry measurementsFrench, Roger H. / Wheland, Robert C. / Jones, David J. / Hilfiker, James N. / Synowicki, Ron A. / Zumsteg, Fredrick C. / Feldman, Jerald / Feiring, Andrew E. et al. | 2000
- 1503
-
Absolute index of refraction and its temperature dependence of calcium fluoride, barium fluoride, and strontium fluoride near 157 nmBurnett, John H. / Gupta, Rajeev / Griesmann, Ulf et al. | 2000
- 1503
-
Absolute index of refraction and its temperature dependence of calcium fluoride, barium fluoride, and strontium fluoride near 157 nm [4000-165]Burnett, J. H. / Gupta, R. / Griesmann, U. / SPIE et al. | 2000
- 1510
-
New silica glass (AQF) for 157-nm lithographyIkuta, Yoshiaki / Kikugawa, Shinya / Kawahara, T. / Mishiro, H. / Shimodaira, Noriaki / Yoshizawa, Shuhei et al. | 2000
- 1510
-
New silica glass (AQF) for 157-nm lithography [4000-166]Ikuta, Y. / Kikugawa, S. / Kawahara, T. / Mishiro, H. / Shimodaira, N. / Yoshizawa, S. / SPIE et al. | 2000
- 1515
-
Advanced F~2 lasers for microlithography [4000-167]Vogler, K. / Stamm, U. / Bragin, I. / Voss, F. / Govorkov, S. V. / Hua, G. / Kleinschmidt, J. / Patzel, R. / SPIE et al. | 2000
- 1515
-
Advanced F2lasers for microlithographyVogler, Klaus / Stamm, Uwe / Bragin, Igor / Voss, Frank / Govorkov, Sergei V. / Hua, Gongxue / Kleinschmidt, Juergen / Paetzel, Rainer et al. | 2000
- 1529
-
Feasibility of highly line-narrowed F~2 laser for 157-nm microlithography [4000-168]Ershov, A. I. / Duffey, T. P. / Onkels, E. / Partlo, W. N. / Sandstrom, R. L. / SPIE et al. | 2000
- 1529
-
Feasibility of highly line-narrowed F2laser for 157-nm microlithographyErshov, Alexander I. / Duffey, Thomas P. / Onkels, Eckehard D. / Partlo, William N. / Sandstrom, Richard L. et al. | 2000
- 1537
-
Laser cleaning of optical elements in 157-nm lithographyBloomstein, Theodore M. / Rothschild, Mordechai / Liberman, Vladimir / Hardy, D. E. / Efremow, N. N. / Palmacci, Stephen T. et al. | 2000
- 1537
-
Laser cleaning of optical elements in 157-nm lithography [4000-169]Bloomstein, T. M. / Rothschild, M. / Liberman, V. / Hardy, D. E. / Efremow, N. N. / Palmacci, S. T. / SPIE et al. | 2000
- 1546
-
Properties and potential of VUV lithographic thin film materialsCangemi, Michael J. / Lassiter, Matthew / Bourov, Anatoly / Smith, Bruce W. et al. | 2000
- 1546
-
Properties and potential of VUV lithographic thin film materials [4000-170]Cangemi, M. / Lassiter, M. / Bourov, A. / Smith, B. W. / SPIE et al. | 2000
- 1553
-
VUV transmittance of fused silica glass influenced by thermal disorder [4000-172]Shimodaira, N. / Saito, K. / Ikushima, A. J. / Kamihori, T. / Yoshizawa, S. / SPIE et al. | 2000
- 1553
-
VUV transmittance of fused silica glass influenced by thermal disorderShimodaira, Noriaki / Saito, Kazuya / Ikushima, Akira J. / Kamihori, Toru / Yoshizawa, Shuhei et al. | 2000
- 1560
-
High-repetition-rate fluorine laser for microlithography [4000-173]Fujimoto, J. / Nagai, S. / Shio, K. / Iwata, Y. / Takehisa, K. / Nishisaka, T. / Wakabayashi, O. / Mizoguchi, H. / SPIE et al. | 2000
- 1560
-
High-repetition-rate fluorine laser for microlithographyFujimoto, Junichi / Nagai, Shinji / Shio, Koji / Iwata, Yasuaki / Takehisa, Kiwamu / Nishisaka, Toshihiro / Wakabayashi, Osamu / Mizoguchi, Hakaru et al. | 2000
- 1568
-
Dynamic change of transmission of CaF~2 single crystals by irradiating with ArF excimer laser light [4000-181]Alkemper, J. / Kandler, J. / Strenge, L. / Morsen, E. / Muhlig, C. / Triebel, W. / SPIE et al. | 2000
- 1568
-
Dynamic change of transmission of CaF2single crystals by irradiating with ArF excimer laser lightAlkemper, Jochen / Kandler, Joerg / Strenge, Lorenz / Moersen, Ewald / Muehlig, Christian / Triebel, Wolfgang et al. | 2000
- 1574
-
Progress in 157-nm lithography development at Intel: resists and reticles [4000-182]Rao, V. / Panning, E. M. / Liao, L. / Hutchinson, J. M. / Grenville, A. / Holl, S. M. / Bruner, D. / Balasubramanian, R. / Kuse, R. / Dao, G. T. et al. | 2000
- 1574
-
Progress in 157-nm lithography development at Intel: resists and reticlesRao, Veena / Panning, Eric M. / Liao, Ling / Hutchinson, John M. / Grenville, Andrew / Holl, Susan M. / Bruner, Don / Balasubramanian, Raghu / Kuse, Ronald / Dao, Giang T. et al. | 2000
- 1582
-
SVG 157-nm lithography approachMcClay, James A. / DeMarco, Michael A. / Fahey, Thomas J. / Hansen, Matthew E. / Tirri, Bruce A. et al. | 2000
- 1582
-
SVG 157-nm lithography approach [4000-183]McClay, J. A. / DeMarco, M. A. / Fahey, T. J. / Hansen, M. E. / Tirri, B. A. / SPIE et al. | 2000
- 1590
-
Interference lithography at 157 nm [4000-184]Switkes, M. / Bloomstein, T. M. / Rothschild, M. / SPIE et al. | 2000
- 1590
-
Interference lithography at 157 nmSwitkes, Michael / Bloomstein, Theodore M. / Rothschild, Mordechai et al. | 2000
- 1594
-
Influence of film stress on advanced optical reticle distortions [4000-185]Siewert, L. K. / Mikkelson, A. R. / Engelstad, R. L. / Lovell, E. G. / Mason, M. E. / Mackay, R. S. / SPIE et al. | 2000
- 1594
-
Influence of film stress on advanced optical reticle distortionsSiewert, Lowell K. / Mikkelson, Andrew R. / Engelstad, Roxann L. / Lovell, Edward G. / Mason, Mark E. / Mackay, R. S. et al. | 2000