7.3.1 Quantum dots and nano crystals containing Hg (English)
Examples for the growth of nano-structures based on IIB-VI compounds: Growth and preparation of quantum dots and nano crystals
- New search for: Klingshirn, C.
- New search for: Klingshirn, C.
- New search for: Klingshirn, C.
In:
Growth and Structuring
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304-305
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2013
- Article/Chapter (Book) / Electronic Resource
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Title:7.3.1 Quantum dots and nano crystals containing Hg
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Subtitle:Examples for the growth of nano-structures based on IIB-VI compounds: Growth and preparation of quantum dots and nano crystals
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Contributors:Klingshirn, C. ( editor ) / Klingshirn, C. ( author )
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Published in:Growth and Structuring ; 304-305
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Publisher:
- New search for: Springer Berlin Heidelberg
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Place of publication:Berlin, Heidelberg
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Publication date:2013-01-01
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Size:2 pages
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ISBN:
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ISSN:
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DOI:
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Type of media:Article/Chapter (Book)
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Type of material:Electronic Resource
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Language:English
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Keywords:
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Source:
Table of contents eBook
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
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1 Introduction to semiconductor quantum structuresKlingshirn, C. et al. | 2013
- 4
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2 Growth of quasi two-dimensional structuresKlingshirn, C. et al. | 2013
- 19
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3 Growth and preparation of quasi one-dimensional systemsKlingshirn, C. et al. | 2013
- 25
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4 Growth and preparation of quasi zero-dimensional structuresKlingshirn, C. et al. | 2013
- 37
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5.1 General remarks on group IV semiconductors and industrial needsKasper, E. et al. | 2013
- 48
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5.2 Layer growth by epitaxyKasper, E. et al. | 2013
- 57
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5.3 Quasi-two-dimensional systems (quantum wells)Kasper, E. et al. | 2013
- 70
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5.4 One-dimensional systems (quantum wires)Kasper, E. et al. | 2013
- 75
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5.5 Zero-dimensional systems (quantum dots)Kasper, E. et al. | 2013
- 89
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6.1 Growth and preparation of quantum wells on GaAs substratesHöfling, C. / Schneider, C. / Forchel, A. et al. | 2013
- 96
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6.2 Structuring and growth of quantum wires and nano-rods on GaAsHöfling, C. / Schneider, C. / Forchel, A. et al. | 2013
- 102
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6.3 Growth and preparation of quantum dots and nano crystals on GaAs substratesHöfling, C. / Schneider, C. / Forchel, A. et al. | 2013
- 115
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6.4.1 The role of substratesHöfling, C. / Schneider, C. / Forchel, A. et al. | 2013
- 118
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6.4.2 Different growth techniquesHöfling, C. / Schneider, C. / Forchel, A. et al. | 2013
- 120
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6.4.3 Group III–nitride quantum wellsHöfling, C. / Schneider, C. / Forchel, A. et al. | 2013
- 123
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6.4.4 Group III–nitride based quantum wiresHöfling, C. / Schneider, C. / Forchel, A. et al. | 2013
- 126
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6.4.5 Group III–nitride based quantum dotsHöfling, C. / Schneider, C. / Forchel, A. et al. | 2013
- 128
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6.4.6 Devices based on group III–nitridesHöfling, C. / Schneider, C. / Forchel, A. et al. | 2013
- 130
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6.5.1 Growth of GaInAs quantum wells on InP substratesHöfling, C. / Schneider, C. / Forchel, A. et al. | 2013
- 133
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6.5.2 Lithographically defined nanowiresHöfling, C. / Schneider, C. / Forchel, A. et al. | 2013
- 135
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6.5.3 Growth and fabrication of InGaAsP nanowhiskers on InP and silicon substratesHöfling, C. / Schneider, C. / Forchel, A. et al. | 2013
- 137
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6.5.4 Site-controlled fabrication of nanowhiskers on InP substrateHöfling, C. / Schneider, C. / Forchel, A. et al. | 2013
- 139
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6.5.5 Epitaxial quantum dots grown on InP substrateHöfling, C. / Schneider, C. / Forchel, A. et al. | 2013
- 144
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6.5.6 Growth of InAs quantum dashesHöfling, C. / Schneider, C. / Forchel, A. et al. | 2013
- 148
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6.5.7 Site-selective growth of InAs quantum dots on InPHöfling, C. / Schneider, C. / Forchel, A. et al. | 2013
- 150
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6.6 Growth of quantum wells and quantum dots on GaSb substratesHöfling, C. / Schneider, C. / Forchel, A. et al. | 2013
- 152
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6.6.1 Growth of quantum wells in GaSb-based diode lasersHöfling, C. / Schneider, C. / Forchel, A. et al. | 2013
- 156
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6.6.2 Growth of quantum wells in GaSb-based type-II diode lasersHöfling, C. / Schneider, C. / Forchel, A. et al. | 2013
- 158
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6.6.3 Growth of quantum wells in GaSb-based quantum cascade laser structuresHöfling, C. / Schneider, C. / Forchel, A. et al. | 2013
- 160
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6.6.4 Growth of quantum wells in GaSb-based interband cascade lasersHöfling, C. / Schneider, C. / Forchel, A. et al. | 2013
- 163
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6.6.5 Growth of quantum wells in GaSb-based superlattice detectorsHöfling, C. / Schneider, C. / Forchel, A. et al. | 2013
- 167
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6.6.6 Growth of quantum dots on GaSbHöfling, C. / Schneider, C. / Forchel, A. et al. | 2013
- 169
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6.7 Growth and preparation of quantum dots and quantum wells on GaP substratesHöfling, C. / Schneider, C. / Forchel, A. et al. | 2013
- 177
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6.8 Properties of III-V materials on Si substrateHöfling, C. / Schneider, C. / Forchel, A. et al. | 2013
- 182
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6.9 Examples of III-V layers and nanostructures with diluted semiconductor materialsHöfling, C. / Schneider, C. / Forchel, A. et al. | 2013
- 193
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7 Examples for the growth of nano-structures based on IIB-VI compoundsKlingshirn, C. et al. | 2013
- 196
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7.1.1 Quantum wells and superlattices containing HgKlingshirn, C. et al. | 2013
- 201
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7.1.2 Quantum wells and superlattices based on CdTe and its alloysKlingshirn, C. et al. | 2013
- 208
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7.1.3 Quantum wells and superlattices based on CdSe and its alloysKlingshirn, C. et al. | 2013
- 214
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7.1.4 Quantum wells and superlattices based on CdS and its alloysKlingshirn, C. et al. | 2013
- 219
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7.1.5 Quantum wells and superlattices based on ZnTe and its alloysKlingshirn, C. et al. | 2013
- 225
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7.1.6 Quantum wells and superlattices based on ZnSe and its alloysKlingshirn, C. et al. | 2013
- 235
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7.1.7 Quantum wells and superlattices based on ZnS and its alloysKlingshirn, C. et al. | 2013
- 237
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7.1.8 Quantum wells and superlattices based on ZnO and its alloysKlingshirn, C. et al. | 2013
- 243
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7.1.9 Quantum wells and superlattices containing diluted magnetic semiconductors in barrier and/or wellKlingshirn, C. et al. | 2013
- 253
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7.2.1 Quantum wires containing HgKlingshirn, C. et al. | 2013
- 256
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7.2.2 Quantum wires and nano rods based on CdTe and its alloysKlingshirn, C. et al. | 2013
- 260
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7.2.3 Quantum wires and nano rods based on CdSe and its alloysKlingshirn, C. et al. | 2013
- 265
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7.2.4 Quantum wires and nano rods based on CdS and its alloysKlingshirn, C. et al. | 2013
- 272
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7.2.5 Quantum wires and nano rods based on ZnTe and its alloysKlingshirn, C. et al. | 2013
- 274
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7.2.6 Quantum wires and nano rods based on ZnSe and its alloysKlingshirn, C. et al. | 2013
- 279
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7.2.7 Quantum wires and nano rods based on ZnS and its alloysKlingshirn, C. et al. | 2013
- 284
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7.2.8 Quantum wires and nano rods based on ZnO and its alloysKlingshirn, C. et al. | 2013
- 299
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7.2.9 Quantum wires and nano rods of diluted magnetic semiconductorsKlingshirn, C. et al. | 2013
- 304
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7.3.1 Quantum dots and nano crystals containing HgKlingshirn, C. et al. | 2013
- 306
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7.3.2 Quantum dots and nano crystals based on CdTe and its alloysKlingshirn, C. et al. | 2013
- 310
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7.3.3 Quantum dots and nano crystals based on CdSe and its alloysKlingshirn, C. et al. | 2013
- 318
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7.3.4 Quantum dots and nano crystals based on CdS and its alloysKlingshirn, C. et al. | 2013
- 328
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7.3.5 Quantum dots and nano crystals based on ZnTe and its alloysKlingshirn, C. et al. | 2013
- 330
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7.3.6 Quantum dots and nano crystals based on ZnSe and its alloysKlingshirn, C. et al. | 2013
- 335
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7.3.7 Quantum dots and nano crystals based on ZnS and its alloysKlingshirn, C. et al. | 2013
- 339
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7.3.8 Quantum dots and nano crystals based on ZnO and its alloysKlingshirn, C. et al. | 2013
- 348
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7.3.9 Quantum dots and nano crystals of diluted magnetic semiconductorsKlingshirn, C. et al. | 2013
- 352
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7.4.1 Self-assembled quantum dots: IntroductionHenneberger, F. et al. | 2013
- 355
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7.4.2 CdSe/ZnSe quantum dotsHenneberger, F. et al. | 2013
- 361
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7.4.3 CdTe/ZnTe quantum dotsHenneberger, F. et al. | 2013
- 364
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7.4.4 Diluted magnetic II-VI quantum dotsHenneberger, F. et al. | 2013
- 367
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7.4.5 Other II-VI heterosystemsHenneberger, F. et al. | 2013
- 370
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8.1 Examples for I-VII semiconductor compounds: General propertiesHönerlage, B. / Gilliot, P. et al. | 2013
- 373
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8.2 Quantum-well structuresHönerlage, B. / Gilliot, P. et al. | 2013
- 384
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8.3 Quantum dotsHönerlage, B. / Gilliot, P. et al. | 2013
- 415
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9.1 IV-VI semiconductors: General propertiesSpringholz, G. / Bauer, G. et al. | 2013
- 422
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9.2 Band-gap engineering by alloyingSpringholz, G. / Bauer, G. et al. | 2013
- 425
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9.2.1 Pseudo-binary IV-VI alloysSpringholz, G. / Bauer, G. et al. | 2013
- 427
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9.2.2 Higher-band-gap alloysSpringholz, G. / Bauer, G. et al. | 2013
- 430
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9.3.1 Molecular beam epitaxySpringholz, G. / Bauer, G. et al. | 2013
- 435
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9.3.2 Other epitaxial growth techniquesSpringholz, G. / Bauer, G. et al. | 2013
- 437
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9.3.3 Substrate materialsSpringholz, G. / Bauer, G. et al. | 2013
- 439
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9.3.4 Growth on BaF2 (111)Springholz, G. / Bauer, G. et al. | 2013
- 443
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9.3.5 Growth on IV-VI substratesSpringholz, G. / Bauer, G. et al. | 2013
- 446
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9.3.6 Growth on KCl and NaClSpringholz, G. / Bauer, G. et al. | 2013
- 448
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9.3.7 Growth on siliconSpringholz, G. / Bauer, G. et al. | 2013
- 451
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9.3.8 Growth on GaAs and CdTeSpringholz, G. / Bauer, G. et al. | 2013
- 454
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9.3.9 DopingSpringholz, G. / Bauer, G. et al. | 2013
- 456
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9.4.1 Growth and material systemsSpringholz, G. / Bauer, G. et al. | 2013
- 462
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9.4.2 Structural propertiesSpringholz, G. / Bauer, G. et al. | 2013
- 466
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9.4.3 Theoretical description of confined statesSpringholz, G. / Bauer, G. et al. | 2013
- 473
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9.4.4 Spectroscopic investigations of IV-VI quantum-well systemsSpringholz, G. / Bauer, G. et al. | 2013
- 480
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9.4.5 Specific results for different material systemsSpringholz, G. / Bauer, G. et al. | 2013
- 493
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9.4.6 Transport in 2D structuresSpringholz, G. / Bauer, G. et al. | 2013
- 496
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9.5.1 Fabrication: lithography and nanowire growthSpringholz, G. / Bauer, G. et al. | 2013
- 498
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9.5.2 Transport in 1D structuresSpringholz, G. / Bauer, G. et al. | 2013
- 501
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9.6 Self-assembled Stranski-Krastanow quantum dotsSpringholz, G. / Bauer, G. et al. | 2013
- 503
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9.6.1 Growth of self-assembled lead-salt quantum dotsSpringholz, G. / Bauer, G. et al. | 2013
- 507
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9.6.2 Ordering and stacking in quantum-dot superlatticesSpringholz, G. / Bauer, G. et al. | 2013
- 514
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9.6.3 Ordering mechanismsSpringholz, G. / Bauer, G. et al. | 2013
- 521
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9.6.4 Optical and electronic propertiesSpringholz, G. / Bauer, G. et al. | 2013
- 524
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9.7 Quantum dots by phase separation and nanoprecipitationSpringholz, G. / Bauer, G. et al. | 2013
- 527
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9.7.1 Structural propertiesSpringholz, G. / Bauer, G. et al. | 2013
- 529
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9.7.2 Size controlSpringholz, G. / Bauer, G. et al. | 2013
- 531
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9.7.3 Emission propertiesSpringholz, G. / Bauer, G. et al. | 2013
- 535
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9.7.4 ElectroluminescenceSpringholz, G. / Bauer, G. et al. | 2013
- 538
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9.8 Optoelectronic device applicationsSpringholz, G. / Bauer, G. et al. | 2013
- 541
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9.8.1 Mid-infrared diode lasersSpringholz, G. / Bauer, G. et al. | 2013
- 547
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9.8.2 Vertical-cavity surface-emitting lasersSpringholz, G. / Bauer, G. et al. | 2013
- 553
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9.8.3 Vertical-external-cavity surface-emitting lasersSpringholz, G. / Bauer, G. et al. | 2013
- 556
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9.8.4 Microdisk lasersSpringholz, G. / Bauer, G. et al. | 2013
- 558
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9.9 Thermoelectric devicesSpringholz, G. / Bauer, G. et al. | 2013
- 562
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10 Conclusion and OutlookKlingshirn, C. et al. | 2013